BZG04-100T/R [NXP]
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor;型号: | BZG04-100T/R |
厂家: | NXP |
描述: | DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor 电视 |
文件: | 总8页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BZG04 series
Transient voltage suppressor
diodes
Product specification
2002 Jul 04
Supersedes data of 1996 Sep 19
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
FEATURES
DESCRIPTION
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• UL 94V-O classified plastic
k
a
package
• Transient suppressor stand-off
voltage range:
8.2 to 220 V for 32 types
Top view
Side view
MSA473
• Shipped in 12 mm embossed tape.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PRSM
non-repetitive peak reverse power 10/1000 µs exponential pulse (see
−
300
W
dissipation
Fig.4); Tj = 25 °C prior to surge;
see also Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
2002 Jul 04
2
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 0.5 A; see Fig.3
MIN.
MAX.
UNIT
−
1.2
V
Per type
Tj = 25 °C unless otherwise specified.
REVERSE
BREAKDOWN
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING VOLTAGE
TYPE
NUMBER
V(BR)R (V)
at Itest
SZ (%/K) at Itest
V(CL)R (V)
MAX.
IR (µA)
Itest
(mA)
at IRSM (A)
note 1
at VR
(V)
MIN.
MIN.
MAX.
MAX.
BZG04-8V2
BZG04-9V1
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-18
BZG04-20
BZG04-22
BZG04-24
BZG04-27
BZG04-30
BZG04-33
BZG04-36
BZG04-39
BZG04-43
BZG04-47
BZG04-51
BZG04-56
BZG04-62
BZG04-68
BZG04-75
BZG04-82
BZG04-91
BZG04-100
BZG04-110
BZG04-120
BZG04-130
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2
9.1
10
11
12
13
15
16
18
8.9
20
7.9
22
7.1
24
31
6.5
27
34
6.0
30
37
5.5
33
40
4.9
36
44
4.6
39
48
4.2
43
52
3.8
47
58
3.5
51
64
3.2
56
70
2.9
62
77
2.6
68
85
126
2.4
75
94
5
139
2.2
82
104
114
124
138
153
5
152
2.0
91
5
167
1.8
100
110
120
130
5
185
1.6
5
204
1.5
5
224
1.3
2002 Jul 04
3
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
REVERSE
TEMPERATURE
BREAKDOWN
COEFFICIENT
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEST
CURRENT
CLAMPING VOLTAGE
TYPE
NUMBER
V
(BR)R (V)
at Itest
SZ (%/K) at Itest
V(CL)R (V)
IR (µA)
Itest
(mA)
at IRSM (A)
note 1
at VR
(V)
MIN.
MIN.
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
MAX.
249
MAX.
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
168
5
5
2
2
2
1.2
1.1
1.0
0.9
0.8
5
5
5
5
5
150
160
180
200
220
188
208
228
251
276
305
336
380
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.
For more information please refer to the “General Part of associated Handbook”.
2002 Jul 04
4
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
GRAPHICAL DATA
MBH452
MBH453
4
10
3
handbook, halfpage
handbook, halfpage
I
F
P
ZSM
(A)
(W)
3
10
2
2
10
1
10
10
0
0
−2
−1
1
2
10
1
t (ms) 10
p
V (V)
F
Tj = 25 °C prior to surge.
Tj = 25 °C.
Fig.2 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.3 Forward current as a function of forward
voltage; typical values.
I
handbook, halfpage
RSM
50
(%)
100
90
4.5
50
10
50
2.5
t
t
1
1.25
MSB213
t
MGD521
2
In accordance with “IEC 60-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Dimensions in mm.
Fig.4 Non-repetitive peak reverse current pulse
definition.
Fig.5 Printed-circuit board for surface mounting.
2002 Jul 04
5
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD106
DO-214AC
97-06-09
2002 Jul 04
6
Philips Semiconductors
Product specification
Transient voltage suppressor diodes
BZG04 series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jul 04
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp8
Date of release: 2002 Jul 04
Document order number: 9397 750 09765
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