BZG142 [NXP]
SMA ZenBlock?; zener with integrated blocking diode; SMA ZenBlock ?;齐纳二极管集成阻塞二极管
| 型号： | BZG142 |
| 厂家： | 
NXP |
| 描述： | SMA ZenBlock?; zener with integrated blocking diode |
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BZG142
SMA ZenBlock ; zener
with integrated blocking diode
Product specification
2001 Aug 20
Supersedes data of 2001 Apr 17
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
FEATURES
• Zener and 600 V/250 ns blocking diode in one package
• Protects the MOSFET in power IC controllers such as
(3)
STARPlug (1), TOPSwitch (2) and VIPer
• High surge capability
• Supports valley switching
• Glass passivated junctions
Top view
Side view
• Excellent clamping capability and stability
• Supplied in 12 mm embossed tape.
MGU215
Fig.1 Simplified outline (DO-214AC) and symbol.
DESCRIPTION
The SMA ZenBlock is designed to protect the MOSFET
in flyback converters against over-voltages caused by the
transformer leakage inductance. The SMA ZenBlock
combines a zener/TVS with a fast soft-recovery diode in
one package, and can be used to replace double diode,
RC or RCD snubbers.
handbook, halfpage
V
o
The BZG142 consists of a glass passivated chip in a
DO-214AC surface mount package.
ZENBLOCK
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
CONTROL
MLD682
(1) STARPlug is a trademark of Philips.
Fig.2 Typical application.
(2) TOPSwitch is a trademark of Power Integrations.
(3) VIPer is a trademark of STMicroelectronics.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
storage temperature
CONDITIONS
MIN.
−65
MAX.
UNIT
Tstg
Tj
+175
+175
°C
°C
junction temperature
−65
Zener
Ptot
total power dissipation
Ttp = 105 °C; see Fig.3
−
−
2.8
W
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square pulse;
Tj = 25 °C prior to surge;
see Figs 5 and 6
400
PRSM
non-repetitive peak reverse power
dissipation
10/1000 µs exponential pulse;
Tj = 25 °C prior to surge; see Fig.4
−
150
W
Blocking diode
VR
continuous reverse voltage
−
−
600
7.5
V
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj(max) prior to
surge; inductive load switched off
mJ
2001 Aug 20
2
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
ELECTRICAL CHARACTERISTICS ZENER/TVS
Tj = 25 °C unless otherwise specified.
REVERSE CURRENT
at STAND-OFF
VOLTAGE
TEMPERATURE
COEFFICIENT CURRENT
TEST
CLAMPING
VOLTAGE
WORKING VOLTAGE
TYPE
NUMBER
SUFFIX(1)
V(CL)R
(V)
IR (µA)
Tj = 150 °C
VZ (V) at Itest (see Fig.7)
SZ (%/K) at Itest
Itest (mA)
at IRSM
(A)(2)
at VR
(V)
MIN.
NOM.
MAX.
MIN.
MAX.
MAX.
MAX.
68
61
82
68
75
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
10
5
97
1.54
1.15
1.05
0.88
0.70
0.66
0.58
0.52
100
100
100
100
100
100
100
100
56
75
91
91
100
110
132
165
176
198
220
130
143
171
214
228
258
288
100
120
150
160
180
200
90
100
120
150
160
180
200
5
82
108
135
144
162
180
5
100
120
130
150
160
5
5
5
5
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZG142-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.4.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
700
TYP.
MAX. UNIT
V(BR)R
CZB
IR
reverse avalanche breakdown voltage IR = 0.1 mA
−
−
V
ZenBlock capacitance
reverse current
f = 1 MHz; VR = 0; see Fig.8
−
−
−
15
−
−
pF
µA
µA
VR = 600 V
5
VR = 600 V; Tj = 150 °C
−
100
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
25
K/W
K/W
K/W
Rth j-a
note 1
note 2
100
150
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.9.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
2001 Aug 20
3
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
GRAPHICAL DATA
MBH451
I
handbook, halfpage
RSM
4
handbook, halfpage
(%)
P
tot
100
90
(W)
3
2
1
0
50
10
t
t
1
t
0
100
200
MGD521
2
T (°C)
Solid line: tie-point temperature.
In accordance with “IEC 60060-1, Section 8”.
Dotted line: ambient temperature; device mounted on an Al2O3
printed-circuit board as shown in Fig.9.
t1 = 10 µs.
t2 = 1000 µs.
Fig.3 Maximum total power dissipation as a
function of temperature.
Fig.4 Non-repetitive peak reverse current pulse
definition.
MLD681
MGU425
5
10
120
handbook, halfpage
derating
handbook, halfpage
percentage
P
ZSM
(%)
100
(W)
4
10
80
60
40
20
0
3
10
2
10
10
10
−1
2
3
4
0
40
80
120
160
T
200
(°C)
1
10
10
10
10
(µs)
t
p
amb
Tj = 25 °C prior to surge.
See Fig.6.
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.6 Peak pulse power (PZSM, PRSM) or current
(IRSM) derating curve.
2001 Aug 20
4
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
MLD679
MLD680
1500
16
handbook, halfpage
handbook, halfpage
C
ZB
I
Z
(pF)
(mA)
12
(1)
(2)
1000
8
(3)
500
(1)
(2)
(3)
4
0
0
−200
50
100
150
200
250
300
0
200
400
600
V
(V)
V
(V)
R
Z
Measured under pulsed conditions.
Solid line: Tamb = 25 °C.
Dotted line: Tamb = 150 °C.
(1) VZ = 68 V.
(1) VZ = 68 V.
(2) VZ = 120 V.
(2) VZ = 120 V.
(3) VZ = 200 V.
(3)
VZ = 200 V.
Fig.7 Working current as a function of working
voltage; typical values.
Fig.8 ZenBlock capacitance as function of
reverse voltage; typical values.
50
4.5
50
2.5
1.25
MSB213
Dimensions in mm.
Fig.9 Printed-circuit board for surface mounting.
2001 Aug 20
5
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD124
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD124
DO-214AC
99-10-22
2001 Aug 20
6
Philips Semiconductors
Product specification
SMA ZenBlock ; zener
with integrated blocking diode
BZG142
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Aug 20
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp8
Date of release: 2001 Aug 20
Document order number: 9397 750 08468
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