BZT52H-C2V4,115
更新时间：2024-11-08 18:09:50
品牌：NXP
描述：BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin
概述
规格参数
数据手册
替代型号BZT52H-C2V4,115 概述
BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin 齐纳二极管 齐纳二极管
BZT52H-C2V4,115 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 零件包装代码： | SOD-123 | 包装说明： | R-PDSO-F2 |
| 针数： | 2 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.50 |
| 风险等级： | 7.43 | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| 最大动态阻抗： | 400 Ω | JESD-30 代码： | R-PDSO-F2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性： | UNIDIRECTIONAL |
| 最大功率耗散： | 0.375 W | 认证状态： | Not Qualified |
| 标称参考电压： | 2.4 V | 子类别： | Voltage Reference Diodes |
| 表面贴装： | YES | 技术： | ZENER |
| 端子面层： | Tin (Sn) | 端子形式： | FLAT |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 最大电压容差： | 8.33% | 工作测试电流： | 5 mA |
| Base Number Matches： | 1 |
BZT52H-C2V4,115 数据手册
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PDF下载BZT52H series
Single Zener diodes in a SOD123F package
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device
(SMD) plastic package
1.2 Features
Total power dissipation: ≤ 830 mW
Small plastic package suitable for
surface mounted design
Wide working voltage range: nominal
Low differential resistance
2.4 V to 75 V (E24 range)
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Quick reference data
Parameter
Conditions
IF = 10 mA
Tamb ≤ 25 °C
Min
Typ
Max
0.9
Unit
V
[1]
[2]
[3]
forward voltage
-
-
-
-
-
-
Ptot
total power dissipation
375
830
mW
mW
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
plastic surface mounted package; 2 leads
Version
BZT52H-C2V4 to
BZT52H-C75[1]
SOD123F
[1] The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking Type number
code
Marking Type number
Marking
code
code
BG
BH
BJ
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
-
-
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
2 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
IF
forward current
-
-
250
mA
IZSM
non-repetitive peak
reverse current
see Table 8, 9
and 10
[1]
PZSM
Ptot
non-repetitive peak
reverse power dissipation
-
40
W
[2]
[3]
total power dissipation
Tamb ≤ 25 °C
-
375
mW
mW
°C
-
830
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
330
150
70
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
[3] Soldering point of cathode tab.
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
3 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max Unit
0.9
[1]
VF
forward voltage
IF = 10 mA
-
-
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
Table 8.
Characteristics per type; BZT52H-C2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Working Maximum differential Reverse
Temperature Diode
Non-repetitive peak
reverse current
IZSM (A)[2]
-Cxxx
voltage
VZ (V);
resistance
rdif (Ω)
current
IR (μA)
coefficient
SZ (mV/K);
IZ = 5 mA
capacitance
Cd (pF)[1]
IZ = 5 mA
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
0.0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
400
500
500
500
500
500
500
500
480
400
150
80
85
83
95
95
95
95
95
78
60
40
10
8
50
20
10
5
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1
0.0
1
0.0
1
0.0
5
1
0.0
3
1
0.0
3
1
0.0
3
2
0.2
2
2
1.2
1
2
2.5
3
4
3.7
2
4
1.2
4.5
80
10
10
10
10
10
10
10
15
20
20
20
25
30
1
5
2.5
5.3
80
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
6.2
100
6
3.8
7.0
10.6 70
7
4.5
8.0
11
10.4 11.6 70
11.4 12.7 90
12.4 14.1 110
13.8 15.6 110
15.3 17.1 170
16.8 19.1 170
18.8 21.2 220
20.8 23.3 220
22.8 25.6 220
8
5.4
9.0
85
12
8
6.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
85
13
8
7.0
80
15
10.5
11.2
12.6
14
15.4
16.8
9.2
75
16
10.4
12.4
14.4
16.4
18.4
75
18
70
20
60
22
60
24
55
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; Tamb = 25 °C
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
4 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
Table 9.
Characteristics per type; BZT52H-C27 to BZT52H-C51
Tj = 25 °C unless otherwise specified.
BZT52H Working
Maximum differential Reverse
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitive peak
-Cxxx
voltage
VZ (V);
resistance
current
capacitance reverse current
Cd (pF)[1]
rdif (Ω)
IR (μA)
IZSM (A)[2]
IZ = 2 mA
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Max
50
50
45
45
45
40
40
40
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
27
30
33
36
39
43
47
51
25.1 28.9 250
28.0 32.0 250
31.0 35.0 250
34.0 38.0 250
37.0 41.0 300
40.0 46.0 325
44.0 50.0 325
48.0 54.0 350
40
40
40
60
75
80
90
100
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
23.1
25.2
27.3
30.1
32.9
35.7
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; Tamb = 25 °C
Table 10. Characteristics per type; BZT52H-C56 to BZT52H-C75
Tj = 25 °C unless otherwise specified
BZT52H Working
Maximum differential Reverse
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitive peak
-Cxxx
voltage
VZ (V);
resistance
current
capacitance reverse current
Cd (pF)[1]
rdif (Ω)
IR (μA)
IZSM (A)[2]
IZ = 2 mA
Min
Max IZ = 0.5 mA IZ = 2 mA Max
VR (V) Min
Max
63.8
71.6
79.8
88.6
Max
40
Max
0.3
56
62
68
75
52.0 60.0 375
58.0 66.0 400
64.0 72.0 400
70.0 79.0 400
120
140
160
175
0.05
0.05
0.05
0.05
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
35
0.3
35
0.25
0.20
35
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; Tamb = 25 °C
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
5 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
mbg801
mbg781
3
10
300
P
I
F
ZSM
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1
1
10
t
p
(ms)
V
F
(V)
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2. Forward current as a function of forward
voltage; typical values
mbg782
mbg783
10
0
12
S
S
Z
(mV/K)
Z
11
4V3
(mV/K)
10
9V1
5
−1
3V9
8V2
7V5
3V6
6V8
6V2
5V6
5V1
0
−2
−3
3V3
4V7
3V0
2V4
2V7
−5
0
4
8
12
16
20
0
20
40
60
I
Z
(mA)
I
Z
(mA)
BZT52H-C2V4 to BZT52H-C4V3
BZT52H-C4V7 to BZT52H-C12
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
6 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
8. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6 2.7
3.4 2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 5. Package outline SOD123F
9. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
BZT52H-C2V4to SOD123F
BZT52H-C75
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
10. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 6. Reflow soldering footprint SOD123F
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
7 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
11. Revision history
Table 12. Revision history
Document ID
BZT52H_SER_2
Modifications:
Release date
20091115
Data sheet status
Change notice
Supersedes
Product data sheet
-
BZT52H_SER_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
BZT52H_SER_1
20051222
Product data sheet
-
-
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
8 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BZT52H_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 15 November 2009
9 of 10
BZT52H series
NXP Semiconductors
Single Zener diodes in a SOD123F package
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 November 2009
Document identifier: BZT52H_SER_2
BZT52H-C2V4,115 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| MM5Z2V4T1G | ONSEMI | Zener Voltage Regulators 200 mW SOD−523 Surface Mount | 功能相似 |
|
| MMSZ5221BT1G | ONSEMI | Zener Voltage Regulators | 功能相似 |
|
BZT52H-C2V4,115 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BZT52H-C2V4,135 | NXP | 2.4V, 0.375W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52H-C2V4-Q | NEXPERIA | Voltage regulator diodesProduction | 获取价格 |
|
| BZT52H-C2V7 | NXP | Single Zener diodes in a SOD123F package | 获取价格 |
|
| BZT52H-C2V7 | NEXPERIA | Voltage regulator diodesProduction | 获取价格 |
|
| BZT52H-C2V7,115 | NXP | BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin | 获取价格 |
|
| BZT52H-C2V7,135 | NXP | 2.7V, 0.375W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52H-C2V7-Q | NEXPERIA | Voltage regulator diodesProduction | 获取价格 |
|
| BZT52H-C30 | NXP | Single Zener diodes in a SOD123F package | 获取价格 |
|
| BZT52H-C30 | NEXPERIA | Voltage regulator diodesProduction | 获取价格 |
|
| BZT52H-C30,115 | NXP | BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin | 获取价格 |
|
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