BZT52H-C68 [NXP]
Single Zener diodes in a SOD123F package; 单齐纳二极管的SOD123F包
| 型号： | BZT52H-C68 |
| 厂家： | 
NXP |
| 描述： | Single Zener diodes in a SOD123F package |
| 文件： | 总10页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 01 — 22 December 2005
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device
(SMD) plastic package.
1.2 Features
■ Total power dissipation: ≤ 830 mW
■ Small plastic package suitable for
surface mounted design
■ Wide working voltage range: nominal
■ Low differential resistance
2.4 V to 75 V (E24 range)
1.3 Applications
■ General regulation functions
1.4 Quick reference data
Table 1:
Symbol
VF
Quick reference data
Parameter
Conditions
Min
Typ
Max
0.9
Unit
V
[1]
[2]
[3]
forward voltage
IF = 10 mA
-
-
-
-
-
-
Ptot
total power dissipation
T
amb ≤ 25 °C
375
830
mW
mW
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
2. Pinning information
Table 2:
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
plastic surface mounted package; 2 leads
Version
BZT52H-C2V4 to
BZT52H-C75[1]
SOD123F
[1] The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4:
Marking codes
Type number
Marking Type number
code
Marking Type number
Marking
code
code
BG
BH
BJ
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
-
-
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
2 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
IF
forward current
-
-
250
mA
IZSM
non-repetitive peak
reverse current
see Table 8, 9
and 10
[1]
PZSM
Ptot
non-repetitive peak
reverse power dissipation
-
40
W
[2]
[3]
total power dissipation
Tamb ≤ 25 °C
-
375
mW
mW
°C
-
830
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
330
150
70
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
3 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
0.9
[1]
VF
forward voltage
IF = 10 mA
-
-
V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Table 8:
Characteristics per type; BZT52H-C2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Working Maximum differential Reverse
Temperature Diode
Non-repetitivepeak
-Cxxx
voltage
VZ (V);
IZ = 5 mA
resistance
dif (Ω)
current
IR (µA)
coefficient
SZ (mV/K);
IZ = 5 mA
capacitance reverse current
r
Cd (pF)[1]
I
ZSM (A)[2]
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
0.0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
400
500
500
500
500
500
500
500
480
400
150
80
85
83
95
95
95
95
95
78
60
40
10
8
50
20
10
5
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1
0.0
1
0.0
1
0.0
5
1
0.0
3
1
0.0
3
1
0.0
3
2
0.2
2
2
1.2
1
2
2.5
3
4
3.7
2
4
1.2
4.5
80
10
10
10
10
10
10
10
15
20
20
20
25
30
1
5
2.5
5.3
80
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
6.2
100
6
3.8
7.0
10.6 70
7
4.5
8.0
11
10.4 11.6 70
11.4 12.7 90
12.4 14.1 110
13.8 15.6 110
15.3 17.1 170
16.8 19.1 170
18.8 21.2 220
20.8 23.3 220
22.8 25.6 220
8
5.4
9.0
85
12
8
6.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
85
13
8
7.0
80
15
10.5
11.2
12.6
14
15.4
16.8
9.2
75
16
10.4
12.4
14.4
16.4
18.4
75
18
70
20
60
22
60
24
55
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; Tamb = 25 °C
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
4 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
Table 9:
Characteristics per type; BZT52H-C27 to BZT52H-C51
Tj = 25 °C unless otherwise specified.
BZT52H Working
Maximum differential Reverse
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitivepeak
-Cxxx
voltage
VZ (V);
resistance
dif (Ω)
current
IR (µA)
capacitance reverse current
Cd (pF)[1]
r
I
ZSM (A)[2]
IZ = 2 mA
Min
Max IZ = 1 mA IZ = 5 mA Max
VR (V) Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Max
50
50
45
45
45
40
40
40
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
27
30
33
36
39
43
47
51
25.1 28.9 250
28.0 32.0 250
31.0 35.0 250
34.0 38.0 250
37.0 41.0 300
40.0 46.0 325
44.0 50.0 325
48.0 54.0 350
40
40
40
60
75
80
90
100
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
23.1
25.2
27.3
30.1
32.9
35.7
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; Tamb = 25 °C
Table 10: Characteristics per type; BZT52H-C56 to BZT52H-C75
Tj = 25 °C unless otherwise specified.
BZT52H Working
Maximum differential Reverse
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Diode
Non-repetitivepeak
-Cxxx
voltage
VZ (V);
resistance
dif (Ω)
current
IR (µA)
capacitance reverse current
Cd (pF)[1]
r
I
ZSM (A)[2]
IZ = 2 mA
Min
Max IZ = 0.5 mA IZ = 2 mA Max
VR (V) Min
Max
63.8
71.6
79.8
88.6
Max
40
Max
0.3
56
62
68
75
52.0 60.0 375
58.0 66.0 400
64.0 72.0 400
70.0 79.0 400
120
140
160
175
0.05
0.05
0.05
0.05
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
35
0.3
35
0.25
0.20
35
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; Tamb = 25 °C
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
5 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
mbg801
mbg781
3
10
300
P
I
ZSM
F
(W)
(mA)
2
200
10
(1)
10
100
(2)
1
10
0
0.6
−1
0.8
1
1
10
t
(ms)
V
(V)
p
F
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2. Forward current as a function of forward
voltage; typical values
mbg782
mbg783
10
0
12
S
S
Z
(mV/K)
Z
11
4V3
(mV/K)
10
9V1
5
−1
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
0
−2
3V3
4V7
3V0
2V4
2V7
−5
−3
0
4
8
12
16
20
0
20
40
60
I
(mA)
Z
I
(mA)
Z
BZT52H-C2V4 to BZT52H-C4V3
BZT52H-C4V7 to BZT52H-C12
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
6 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
8. Package outline
1.7
1.5
1.2
1.0
1
0.55
0.35
3.6 2.7
3.4 2.5
2
0.70
0.55
0.25
0.10
Dimensions in mm
04-11-29
Fig 5. Package outline SOD123F
9. Packing information
Table 11: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
10000
BZT52H-C2V4to SOD123F
BZT52H-C75
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 16.
10. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 6. Reflow soldering footprint SOD123F
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
7 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
11. Revision history
Table 12: Revision history
Document ID
Release date Data sheet status
20051222 Product data sheet
Change notice Doc. number
9397 750 15082
Supersedes
BZT52H_SER_1
-
-
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
8 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
9 of 10
BZT52H series
Philips Semiconductors
Single Zener diodes in a SOD123F package
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 22 December 2005
Document number: 9397 750 15082
Published in The Netherlands
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