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BZT52H-C75,115 [NXP]

BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin;
BZT52H-C75,115
型号： BZT52H-C75,115
厂家： NXP    NXP
描述：

BZT52H series - Single Zener diodes in a SOD123F package SOD-123 2-Pin

测试 光电二极管
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BZT52H series  
Single Zener diodes in a SOD123F package  
Rev. 02 — 15 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device  
(SMD) plastic package  
1.2 Features  
„ Total power dissipation: ≤ 830 mW  
„ Small plastic package suitable for  
surface mounted design  
„ Wide working voltage range: nominal  
„ Low differential resistance  
2.4 V to 75 V (E24 range)  
1.3 Applications  
„ General regulation functions  
1.4 Quick reference data  
Table 1.  
Symbol  
VF  
Quick reference data  
Parameter  
Conditions  
IF = 10 mA  
Tamb ≤ 25 °C  
Min  
Typ  
Max  
0.9  
Unit  
V
[1]  
[2]  
[3]  
forward voltage  
-
-
-
-
-
-
Ptot  
total power dissipation  
375  
830  
mW  
mW  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.  
 
 
 
 
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Symbol  
[1]  
1
2
2
anode  
1
2
sym001  
[1] The marking bar indicates the cathode  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
plastic surface mounted package; 2 leads  
Version  
BZT52H-C2V4 to  
BZT52H-C75[1]  
SOD123F  
[1] The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking Type number  
code  
Marking Type number  
Marking  
code  
code  
BG  
BH  
BJ  
BZT52H-C2V4  
BZT52H-C2V7  
BZT52H-C3V0  
BZT52H-C3V3  
BZT52H-C3V6  
BZT52H-C3V9  
BZT52H-C4V3  
BZT52H-C4V7  
BZT52H-C5V1  
BZT52H-C5V6  
BZT52H-C6V2  
BZT52H-C6V8  
BZT52H-C7V5  
B3  
B4  
B5  
B6  
B7  
B8  
B9  
BA  
BB  
BC  
BD  
BE  
BF  
BZT52H-C8V2  
BZT52H-C9V1  
BZT52H-C10  
BZT52H-C11  
BZT52H-C12  
BZT52H-C13  
BZT52H-C15  
BZT52H-C16  
BZT52H-C18  
BZT52H-C20  
BZT52H-C22  
BZT52H-C24  
BZT52H-C27  
BZT52H-C30  
BZT52H-C33  
BZT52H-C36  
BZT52H-C39  
BZT52H-C43  
BZT52H-C47  
BZT52H-C51  
BZT52H-C56  
BZT52H-C62  
BZT52H-C68  
BZT52H-C75  
-
BV  
BW  
BX  
BY  
BZ  
C1  
C2  
C3  
C4  
C5  
C6  
-
BK  
BL  
BM  
BN  
BP  
BQ  
BR  
BS  
BT  
BU  
-
-
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
2 of 10  
 
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
IF  
forward current  
-
-
250  
mA  
IZSM  
non-repetitive peak  
reverse current  
see Table 8, 9  
and 10  
[1]  
PZSM  
Ptot  
non-repetitive peak  
reverse power dissipation  
-
40  
W
[2]  
[3]  
total power dissipation  
Tamb ≤ 25 °C  
-
375  
mW  
mW  
°C  
-
830  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
−65  
−65  
+150  
+150  
°C  
°C  
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
[2]  
[3]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
330  
150  
70  
K/W  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.  
[3] Soldering point of cathode tab.  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
3 of 10  
 
 
 
 
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
0.9  
[1]  
VF  
forward voltage  
IF = 10 mA  
-
-
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
Table 8.  
Characteristics per type; BZT52H-C2V4 to BZT52H-C24  
Tj = 25 °C unless otherwise specified.  
BZT52H Working Maximum differential Reverse  
Temperature Diode  
Non-repetitive peak  
reverse current  
IZSM (A)[2]  
-Cxxx  
voltage  
VZ (V);  
resistance  
rdif (Ω)  
current  
IR (μA)  
coefficient  
SZ (mV/K);  
IZ = 5 mA  
capacitance  
Cd (pF)[1]  
IZ = 5 mA  
Min  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
9.4  
Max IZ = 1 mA IZ = 5 mA Max  
VR (V) Min  
Max  
0.0  
Max  
450  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
90  
Max  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
2.6  
2.9  
3.2  
3.5  
3.8  
4.1  
4.6  
5.0  
5.4  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
400  
500  
500  
500  
500  
500  
500  
500  
480  
400  
150  
80  
85  
83  
95  
95  
95  
95  
95  
78  
60  
40  
10  
8
50  
20  
10  
5
1
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
1
0.0  
1
0.0  
1
0.0  
5
1
0.0  
3
1
0.0  
3
1
0.0  
3
2
0.2  
2
2
1.2  
1
2
2.5  
3
4
3.7  
2
4
1.2  
4.5  
80  
10  
10  
10  
10  
10  
10  
10  
15  
20  
20  
20  
25  
30  
1
5
2.5  
5.3  
80  
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
5
3.2  
6.2  
100  
6
3.8  
7.0  
10.6 70  
7
4.5  
8.0  
11  
10.4 11.6 70  
11.4 12.7 90  
12.4 14.1 110  
13.8 15.6 110  
15.3 17.1 170  
16.8 19.1 170  
18.8 21.2 220  
20.8 23.3 220  
22.8 25.6 220  
8
5.4  
9.0  
85  
12  
8
6.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
85  
13  
8
7.0  
80  
15  
10.5  
11.2  
12.6  
14  
15.4  
16.8  
9.2  
75  
16  
10.4  
12.4  
14.4  
16.4  
18.4  
75  
18  
70  
20  
60  
22  
60  
24  
55  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 μs; Tamb = 25 °C  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
4 of 10  
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
Table 9.  
Characteristics per type; BZT52H-C27 to BZT52H-C51  
Tj = 25 °C unless otherwise specified.  
BZT52H Working  
Maximum differential Reverse  
Temperature  
coefficient  
SZ (mV/K);  
IZ = 5 mA  
Diode  
Non-repetitive peak  
-Cxxx  
voltage  
VZ (V);  
resistance  
current  
capacitance reverse current  
Cd (pF)[1]  
rdif (Ω)  
IR (μA)  
IZSM (A)[2]  
IZ = 2 mA  
Min  
Max IZ = 1 mA IZ = 5 mA Max  
VR (V) Min  
Max  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
Max  
50  
50  
45  
45  
45  
40  
40  
40  
Max  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
27  
30  
33  
36  
39  
43  
47  
51  
25.1 28.9 250  
28.0 32.0 250  
31.0 35.0 250  
34.0 38.0 250  
37.0 41.0 300  
40.0 46.0 325  
44.0 50.0 325  
48.0 54.0 350  
40  
40  
40  
60  
75  
80  
90  
100  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
18.9  
21  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 μs; Tamb = 25 °C  
Table 10. Characteristics per type; BZT52H-C56 to BZT52H-C75  
Tj = 25 °C unless otherwise specified  
BZT52H Working  
Maximum differential Reverse  
Temperature  
coefficient  
SZ (mV/K);  
IZ = 5 mA  
Diode  
Non-repetitive peak  
-Cxxx  
voltage  
VZ (V);  
resistance  
current  
capacitance reverse current  
Cd (pF)[1]  
rdif (Ω)  
IR (μA)  
IZSM (A)[2]  
IZ = 2 mA  
Min  
Max IZ = 0.5 mA IZ = 2 mA Max  
VR (V) Min  
Max  
63.8  
71.6  
79.8  
88.6  
Max  
40  
Max  
0.3  
56  
62  
68  
75  
52.0 60.0 375  
58.0 66.0 400  
64.0 72.0 400  
70.0 79.0 400  
120  
140  
160  
175  
0.05  
0.05  
0.05  
0.05  
39.2  
43.4  
47.6  
52.5  
52.2  
58.8  
65.6  
73.4  
35  
0.3  
35  
0.25  
0.20  
35  
[1] f = 1 MHz; VR = 0 V  
[2] tp = 100 μs; Tamb = 25 °C  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
5 of 10  
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
mbg801  
mbg781  
3
10  
300  
P
I
F
ZSM  
(W)  
(mA)  
2
200  
10  
(1)  
(2)  
10  
100  
1
10  
0
0.6  
−1  
0.8  
1
1
10  
t
p
(ms)  
V
F
(V)  
(1) Tj = 25 °C (prior to surge)  
(2) Tj = 150 °C (prior to surge)  
Tj = 25 °C  
Fig 1. Non-repetitive peak reverse power dissipation  
as a function of pulse duration; maximum  
values  
Fig 2. Forward current as a function of forward  
voltage; typical values  
mbg782  
mbg783  
10  
0
12  
S
S
Z
(mV/K)  
Z
11  
4V3  
(mV/K)  
10  
9V1  
5
−1  
3V9  
8V2  
7V5  
3V6  
6V8  
6V2  
5V6  
5V1  
0
−2  
−3  
3V3  
4V7  
3V0  
2V4  
2V7  
−5  
0
4
8
12  
16  
20  
0
20  
40  
60  
I
Z
(mA)  
I
Z
(mA)  
BZT52H-C2V4 to BZT52H-C4V3  
BZT52H-C4V7 to BZT52H-C12  
Tj = 25 °C to 150 °C  
Tj = 25 °C to 150 °C  
Fig 3. Temperature coefficient as a function of  
working current; typical values  
Fig 4. Temperature coefficient as a function of  
working current; typical values  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
6 of 10  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
8. Package outline  
1.7  
1.5  
1.2  
1.0  
1
0.55  
0.35  
3.6 2.7  
3.4 2.5  
2
0.70  
0.55  
0.25  
0.10  
Dimensions in mm  
04-11-29  
Fig 5. Package outline SOD123F  
9. Packing information  
Table 11. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
BZT52H-C2V4to SOD123F  
BZT52H-C75  
4 mm pitch, 8 mm tape and reel  
-115  
-135  
[1] For further information and the availability of packing methods, see Section 13.  
10. Soldering  
4.4  
4
2.9  
1.6  
solder lands  
solder resist  
2.1 1.6  
1.1 1.2  
solder paste  
occupied area  
1.1  
(2×)  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm  
Fig 6. Reflow soldering footprint SOD123F  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
7 of 10  
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
11. Revision history  
Table 12. Revision history  
Document ID  
BZT52H_SER_2  
Modifications:  
Release date  
20091115  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
BZT52H_SER_1  
• This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
BZT52H_SER_1  
20051222  
Product data sheet  
-
-
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
8 of 10  
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
12.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BZT52H_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 15 November 2009  
9 of 10  
 
 
 
 
 
 
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information . . . . . . . . . . . . . . . . . . . . . 7  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . . 9  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 15 November 2009  
Document identifier: BZT52H_SER_2  
 

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