BZV14 [NXP]
Voltage reference diodes; 电压基准二极管
| 型号： | BZV14 |
| 厂家： | 
NXP |
| 描述： | Voltage reference diodes |
| 文件： | 总5页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
BZV10 to BZV14
Voltage reference diodes
1996 Mar 21
Product specification
Supersedes data of March 1991
Philips Semiconductors
Product specification
Voltage reference diodes
BZV10 to BZV14
FEATURES
DESCRIPTION
• Temperature compensated
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
• Reference voltage range:
5.9 to 6.5 V (typ. 6.2 V)
• Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
k
a
handbook, halfpage
APPLICATION
MAM216
• Voltage reference sources in
measuring instruments such as
digital voltmeters.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
working current
CONDITIONS
MIN.
−
MAX.
50
UNIT
mA
IZ
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb = 50 °C
−
400
+200
200
+70
mW
°C
−65
−
junction temperature
°C
Tamb
operating ambient temperature
0
°C
1996 Mar 21
2
Philips Semiconductors
Product specification
Voltage reference diodes
BZV10 to BZV14
ELECTRICAL CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
Vref reference voltage
∆Vref
CONDITIONS
IZ =2 mA
IZ =2 mA; test points for
amb: 0; +25; +70 °C;
MIN.
TYP.
MAX.
UNIT
5.9
6.2
6.5
V
reference voltage excursion
T
BZV10
BZV11
−
−
−
−
−
−
−
−
−
−
46
mV
mV
mV
mV
mV
notes 1 and 2
23
9
BZV12
BZV13
4.6
BZV14
2.3
SZ
temperature coefficient
BZV10
IZ = 2 mA: see Fig.2;
notes 1 and 2
−
−
−
−
−
−
−
−
0.01
%/K
BZV11
0.005 %/K
0.002 %/K
0.001 %/K
0.0005 %/K
BZV12
−
BZV13
−
BZV14
−
rdif
Notes
differential resistance
IZ = 2 mA; see Fig.3
20
50
Ω
1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the
differential resistance rdif and the temperature coefficient SZ.
a) As the max. rdif of the device can be 50 Ω, a change of 0.01 mA in the current through the reference diode will
result in a ∆Vref of 0.01 mA × 50 Ω = 0.5 mV. This level of ∆Vref is not significant on a BZV10 (∆Vref < 46 mV),
it is however very significant on a BZV14 (∆Vref < 2.3 mV).
b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the
specified test current, and the SZ of the reference diode will be different at different levels of IZ. The absolute value
of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies
particularly to the BZV13 and BZV14. The effect of the stability of IZ on SZ is shown in Fig.2.
2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆Vref)
over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature
points within the range. VZ is measured and recorded at each temperature specified. The ∆Vref between the highest
and lowest values must not exceed the maximum ∆Vref given. Therefore the temperature coefficient is only given as
V
ref1 – Vref2
100
------------------------------------- -------------------
amb2 – Tamb1 Vref nom
a reference. It may be derived from: SZ
=
×
%/K
T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
8 mm from the body
lead length 10 mm
300
375
K/W
K/W
1996 Mar 21
3
Philips Semiconductors
Product specification
Voltage reference diodes
BZV10 to BZV14
GRAPHICAL DATA
MBG532
MBG533
0.002
30
handbook, halfpage
handbook, halfpage
∆S
Z
r
dif
(Ω)
(%/K)
0.001
25
0
20
15
−0.001
−0.002
−0.003
10
1.5
1.5
2.0
2.5
2.0
2.5
I
(mA)
I
(mA)
Z
Z
Fig.2 Temperature coefficient change as a
function of working current; typical values.
Fig.3 Differential resistance as a function of
working current; typical values.
1996 Mar 21
4
Philips Semiconductors
Product specification
Voltage reference diodes
BZV10 to BZV14
PACKAGE OUTLINE
0.55
max
1.6
max
3.04
max
25.4 min
25.4 min
MSA212 - 1
Dimensions in mm.
The marking band indicates the cathode.
The diodes are type branded.
Fig.4 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 21
5
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