BZV81T/R [NXP]
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, GLASS, SMD, 2 PIN, Voltage Reference Diode;型号: | BZV81T/R |
厂家: | NXP |
描述: | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, GLASS, SMD, 2 PIN, Voltage Reference Diode 二极管 测试 |
文件: | 总4页 (文件大小:24K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZV80; BZV81
Voltage reference diodes
1996 Mar 21
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Voltage reference diodes
BZV80; BZV81
FEATURES
DESCRIPTION
• Reference voltage range:
Leadless voltage reference diode in a small glass SOD80 SMD package.
5.89 to 6.51 V (nom. 6.20 V)
• Low temperature coefficient range:
max. 0.005 to 0.01 %/K.
k
a
handbook, 4 columns
APPLICATION
• Voltage reference sources.
MAM215
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
working current
CONDITIONS
MIN.
MAX.
UNIT
mA
IZ
−
−
50
400
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb = 50 °C; note 1
mW
°C
−65
−
+200
200
junction temperature
°C
Tamb
operating ambient temperature
−20
+80
°C
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 21
2
Philips Semiconductors
Product specification
Voltage reference diodes
BZV80; BZV81
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
reference voltage
CONDITIONS
IZ = 7.5 mA
IZ = 7.5 mA; test points for
amb: −20; +25; +55; +80 °C;
MIN.
NOM.
MAX.
UNIT
Vref
5.89
6.20
6.51
V
∆Vref
reference voltage excursion
BZV80
T
−
−
−
−
62
31
mV
mV
notes 1 and 2
BZV81
SZ
temperature coefficient
BZV80
IZ = 7.5 mA: notes 1 and 2
−
−
−
−
−
0.01
%/K
BZV81
0.005 %/K
15
rdif
differential resistance
IZ = 7.5 mA
Ω
Notes
1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change with IZ, namely
the differential resistance rdif and the temperature coefficient SZ.
a) Each change of IZ can result in a maximum change of ∆Vref as follows: ∆Vref (mV) = ∆IZ (mA) × 15 Ω
taking into account that rdif is max. 15 Ω.
b) The temperature coefficient of the reference voltage SZ is also a function of IZ. However, for these reference
diodes SZ varies max. ±0.05 mV/K or ±0.001%/K when IZ is between 6 and 10 mA, so this effect can be neglected
in practice for these types.
2. The temperature coefficient of the reference voltage is obtained from the following formula:
V
ref1 – Vref2
100
------------------------------------- -------------------
amb2 – Tamb1 Vref nom
SZ
=
×
%/K
T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
300
380
K/W
K/W
thermal resistance from junction to ambient note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 21
3
Philips Semiconductors
Product specification
Voltage reference diodes
BZV80; BZV81
PACKAGE OUTLINE
1.7
1.5
O
0.3
0.3
3.7
3.3
MBA388 - 2
Dimensions in mm.
The cathode is indicated by a yellow band.
Fig.2 SOD80.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 21
4
相关型号:
BZV85-C10T/R
DIODE 10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
©2020 ICPDF网 联系我们和版权申明