BZV85-C9V1T/R [NXP]
DIODE 9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode;
| 型号： | BZV85-C9V1T/R |
| 厂家： | 
NXP |
| 描述： | DIODE 9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode 测试 二极管 |
| 文件： | 总9页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZV85 series
Voltage regulator diodes
Product data sheet
1999 May 11
Supersedes data of 1996 Apr 26
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV85 series
FEATURES
DESCRIPTION
• Total power dissipation:
max. 1.3 W
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
handbook, halfpage
• Non-repetitive peak reverse power
k
a
dissipation: max. 60 W.
MAM241
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
• Stabilization purposes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
PARAMETER
CONDITIONS
MIN.
MAX.
500
UNIT
mA
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 μs; square wave;
see Table
Tj = 25 °C prior to surge; see Fig.3 “Per type”
tp = 10 ms; half sinewave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; lead length 10 mm;
−
1
W
note 1
note 2
−
−
1.3
60
W
W
PZSM
non-repetitive peak reverse power tp = 100 μs; square wave;
dissipation
Tj = 25 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
+200
200
°C
°C
−
Notes
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
2. If the leads are kept at Ttp = 55 °C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 50 mA; see Fig.4
1
V
1999 May 11
2
Per type
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
VR = 0 V
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
RESISTANCE
SZ (mV/K)
at IZtest
rdif (Ω)
at IZtest
at IZtest
see Figs 5 and 6
VOLTAGE
BZV85-
CXXX
at tp = 100 μs; at tp = 10 ms;
IR (μA)
VR
(V)
T
amb = 25 °C
Tamb = 25 °C
MIN. MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX. (A)
MAX. (mA)
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
3.4
3.7
3.8
4.1
15
15
13
13
10
7
−3.5
−3.5
−2.7
−2.0
−0.5
0
−1.0
−1.0
0
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
450
450
450
300
300
300
200
200
150
150
150
90
50
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
8.0
8.0
8.0
8.0
8.0
8.0
7.0
7.0
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
2000
1950
1850
1800
1750
1700
1620
1550
1500
1400
1340
1200
1100
1000
900
10
4.0
4.6
5
4.4
5.0
+0.7
+2.2
2.7
3
4.8
5.4
3
5.2
6.0
2
5.8
6.6
4
0.6
3.6
2
6.4
7.2
3.5
3
1.3
4.3
2
7.0
7.9
2.5
5.5
1
7.7
8.7
5
3.1
6.1
0.7
0.7
0.2
0.2
0.2
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
8.5
9.6
5
3.8
7.2
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
8
4.7
8.5
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
10
10
10
15
15
20
24
25
30
40
45
5.3
9.3
85
12
6.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
32.0
85
13
7.4
80
15
8.9
75
760
16
10.7
11.8
13.6
16.6
18.3
20.1
22.4
75
700
18
70
600
20
60
540
22
60
500
24
55
450
27
50
19
400
30
8
50
21
380
WORKING
VOLTAGE
VZ (V)
DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
Ztest (mA) at f = 1 MHz;
DIODE CAP.
Cd (pF)
REVERSE
CURRENT at
REVERSE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
RESISTANCE
SZ (mV/K)
at IZtest
rdif (Ω)
I
at IZtest
at IZtest
see Figs 5 and 6
VR = 0 V
VOLTAGE
BZV85-
CXXX
at tp = 100 μs; at tp = 10 ms;
IR (μA)
VR
(V)
T
amb = 25 °C
Tamb = 25 °C
MIN. MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX. (A)
MAX. (mA)
33
36
39
43
47
51
56
62
68
75
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
45
50
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
8
8
6
6
4
4
4
4
4
4
45
45
45
40
40
40
40
35
35
35
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
23
25
27
30
33
36
39
43
48
53
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
350
320
296
270
246
226
208
186
171
161
60
75
100
125
150
175
200
225
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV85 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
110
UNIT
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 4 mm; see Fig.2
lead length10 mm; note 1
Rth j-a
175
Note
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
GRAPHICAL DATA
MBG929
3
10
R
th j-tp
(K/W)
δ = 1
2
10
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
t
t
p
p
δ
=
T
T
1
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV85 series
MBG925
300
handbook, halfpage
MBG802
2
I
10
F
handbook, halfpage
(mA)
I
ZSM
(A)
200
(1)
10
(1)
(2)
100
(2)
1
0
0
0.5
1.0
V
(V)
F
−1
10
2
1
10
V
(V)
10
Znom
(1) Tj = 200 °C.
(2) Tj = 25 °C.
(1) tp = 10 μs; half sinewave; Tamb = 25 °C.
(2) tp = 10 ms; half sinewave; Tamb = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
Fig.3 Non-repetitive peak reverse current as a
function of the nominal working voltage.
MBG800
MBG926
100
10
handbook, halfpage
handbook, halfpage
S
Z
(1)
(mV/K)
S
Z
(mV/K)
80
10
(2)
(3)
9V1
5
8V2
7V5
6V8
60
40
6V2
5V6
5V1
0
4V7
4V3
20
0
3V6
3V9
−5
2
1
10
V
(V)
10
0
25
50
Znom
I
(mA)
Z
IZ = IZtest; Tj = 25 to 150 °C.
(1) Maximum values.
(2) Typical values.
BZV85-C3V6 to C10.
Tj = 25 to 150 °C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
(3) Minimum values.
Fig.6 Temperature coefficient as a function of
nominal working voltage.
Fig.5 Temperature coefficient as a function of
working current; typical values.
1999 May 11
6
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV85 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD66
(1)
k
a
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
2
4 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.81
2.6
4.8
28
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-41
EIAJ
97-06-20
SOD66
1999 May 11
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV85 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 11
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
115002/00/02/pp9
Date of release: 1999 May 11
Document order number: 9397 750 05929
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