BZX284-B24T/R [NXP]
DIODE 24 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC PACKAGE-2, Voltage Regulator Diode;型号: | BZX284-B24T/R |
厂家: | NXP |
描述: | DIODE 24 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC PACKAGE-2, Voltage Regulator Diode 稳压二极管 齐纳二极管 测试 CD |
文件: | 总12页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZX284 series
Voltage regulator diodes
1999 Apr 19
Product specification
Supersedes data of 1996 Apr 17
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
FEATURES
DESCRIPTION
• Total power dissipation:
max. 400 mW
Low-power voltage regulator diodes in a small ceramic SMD SOD110 package.
The diodes are available in the normalized E24 ±2% (BZX284-B) and ±5%
(BZX284-C) tolerance range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
• Two tolerance series:
±2% and ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range).
cathode mark
handbook, 4 columns
a
k
k
a
APPLICATIONS
• General regulation functions.
bottom view
side view
top view
MAM219
Fig.1 Simplified outline (SOD110) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX284-B2V4
BZX284-B2V7
BZX284-B3V0
BZX284-B3V3
BZX284-B3V6
BZX284-B3V9
BZX284-B4V3
BZX284-B4V7
BZX284-B5V1
BZX284-B5V6
BZX284-B6V2
BZX284-B6V8
BZX284-B7V5
BZX284-B8V2
BZX284-B9V1
BZX284-B10
BZX284-B11
WO
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XA
BZX284-B15
BZX284-B16
BZX284-B18
BZX284-B20
BZX284-B22
BZX284-B24
BZX284-B27
BZX284-B30
BZX284-B33
BZX284-B36
BZX284-B39
BZX284-B43
BZX284-B47
BZX284-B51
BZX284-B56
BZX284-B62
BZX284-B68
BZX284-B75
−
XH
XI
BZX284-C2V4
BZX284-C2V7
BZX284-C3V0
BZX284-C3V3
BZX284-C3V6
BZX284-C3V9
BZX284-C4V3
BZX284-C4V7
BZX284-C5V1
BZX284-C5V6
BZX284-C6V2
BZX284-C6V8
BZX284-C7V5
BZX284-C8V2
BZX284-C9V1
BZX284-C10
BZX284-C11
YO
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZA
ZB
ZC
ZD
ZE
ZF
BZX284-C15
BZX284-C16
BZX284-C18
BZX284-C20
BZX284-C22
BZX284-C24
BZX284-C27
BZX284-C30
BZX284-C33
BZX284-C36
BZX284-C39
BZX284-C43
BZX284-C47
BZX284-C51
BZX284-C56
BZX284-C62
BZX284-C68
BZX284-C75
−
ZH
ZI
XJ
ZJ
XK
XL
XM
XN
XO
XP
XQ
XR
XS
XT
XU
XV
XW
XX
XY
−
ZK
ZL
ZM
ZN
ZO
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
−
XB
XC
XD
XE
BZX284-B12
BZX284-B13
XF
BZX284-C12
BZX284-C13
XG
ZG
1999 Apr 19
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
mA
IF
continuous forward current
−
250
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
see Tables 1 and 2
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
−65
−
400
+150
150
mW
°C
°C
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
ELECTRICAL CHARACTERISTICS
Total BZX284-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IF = 10 mA; see Fig.4
IF = 100 mA; see Fig.4
0.9
1.1
V
V
IR
reverse current
BZX284-B/C2V4
BZX284-B/C2V7
BZX284-B/C3V0
BZX284-B/C3V3
BZX284-B/C3V6
BZX284-B/C3V9
BZX284-B/C4V3
BZX284-B/C4V7
BZX284-B/C5V1
BZX284-B/C5V6
BZX284-B/C6V2
BZX284-B/C6V8
BZX284-B/C7V5
BZX284-B/C8V2
BZX284-B/C9V1
BZX284-B/C10
BZX284-B/C11
BZX284-B/C12
BZX284-B/C13
BZX284-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
1999 Apr 19
3
Table 1 Per type BZX284-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
VZ (V)
rdif (Ω)
BZX284-
at IZtest = 5 mA
B or C
XXX
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
at IZtest = 5 mA
MIN. MAX. MIN. MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
MAX.
2V4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
2.6
2.9
275
300
325
350
375
400
410
425
400
80
400
450
500
500
500
500
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
4.0
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
40
2.3
7.2
30
6
3.0
7.9
15
80
2
4.0
8.7
20
80
2
4.6
4.0
9.6
20
100
150
150
150
170
200
200
225
225
250
250
2
5.5
3.0
9.80 10.20
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
20
2
6.4
3.0
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
25
2
7.4
2.5
12
25
2
8.4
2.5
13
25
2
9.4
2.5
15
25
3
11.4
12.4
14.4
16.4
18.4
20.4
2.0
16
25
4
97
1.5
18
25
4
93
1.5
20
30
4
88
1.5
22
30
5
84
1.25
1.25
24
30
6
80
Table 2 Per type BZX284-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
VZ (V)
rdif (Ω)
BZX284-
at IZtest = 2 mA
B or C
XXX
Tol. ±2% (B)
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX.
TYP.
35
35
40
40
40
45
45
45
50
60
75
85
MAX.
250
250
275
300
300
325
325
350
375
400
400
400
TYP.
8
MAX.
40
TYP.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
MAX.
73
66
60
59
58
56
55
52
49
44
40
35
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
27
30
33
36
39
43
47
51
56
62
68
75
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
10
11
15
25
30
30
35
40
50
55
70
40
40
60
75
80
90
110
120
140
160
175
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
315
K/W
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
MOUNTING
Wave soldering
Reflow soldering
Before wave soldering, attach SOD110 packages to the
printed-circuit boards using a small dot of thermo-setting
epoxy or UV-curing adhesive centred between the
soldering lands (see Fig.3).
Follow standard reflow soldering techniques to ensure
correct application of solder paste and placement of the
SOD110 package (see Fig.2).
3.00
3.40
handbook, halfpage
handbook, halfpage
1.25
1.25
MGC119
MGC126
1.00
1.00
1.10
1.10
Dimensions in mm.
Dimensions in mm.
Fig.2 SOD110 reflow soldering pattern.
Fig.3 SOD110 wave soldering pattern.
1999 Apr 19
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
GRAPHICAL DATA
MBG781
MBG783
300
0
handbook, halfpage
handbook, halfpage
I
S
Z
(mV/K)
F
4V3
(mA)
200
−1
3V9
3V6
100
−2
3V3
3V0
2V4
2V7
0
0.6
−3
0.8
1.0
0
20
40
60
I
(mA)
V
(V)
Z
F
BZX284-B/C2V4 to B/C4V3.
Tj = 25 to 150 °C.
Tj = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
MBG782
10
handbook, halfpage
12
S
Z
11
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
20
I
(mA)
Z
BZX284-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Fig.6 Temperature coefficient as a function of
working current; typical values.
1999 Apr 19
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
SOD110
D
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
A
UNIT
D
E
y
max.
1
2
2.10
1.90
1.40
1.10
mm
1.6
0.1
0
0.5 1 mm
scale
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-14
SOD110
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 19
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
NOTES
1999 Apr 19
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
NOTES
1999 Apr 19
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX284 series
NOTES
1999 Apr 19
11
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© Philips Electronics N.V. 1999
SCA63
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Date of release: 1999 Apr 19
Document order number: 9397 750 05488
相关型号:
BZX284-B27135
DIODE 27 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC, SMD, 2 PIN, Voltage Regulator Diode
NXP
BZX284-B2V4135
DIODE 2.4 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC, SMD, 2 PIN, Voltage Regulator Diode
NXP
BZX284-B2V4T/R
DIODE 2.4 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC PACKAGE-2, Voltage Regulator Diode
NXP
BZX284-B2V7135
DIODE 2.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC, SMD, 2 PIN, Voltage Regulator Diode
NXP
BZX284-B30135
DIODE 30 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC, SMD, 2 PIN, Voltage Regulator Diode
NXP
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