BZX384-B4V3 [NXP]
Voltage regulator diodes; 稳压二极管型号: | BZX384-B4V3 |
厂家: | NXP |
描述: | Voltage regulator diodes |
文件: | 总11页 (文件大小:72K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX384 series
Voltage regulator diodes
Product specification
2004 Mar 22
Supersedes data of 2003 Apr 01
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
FEATURES
PINNING
• Total power dissipation: max. 300 mW
PIN
DESCRIPTION
• Two tolerance series: ±2% and approx. ±5%
• Working voltage range: nominal 2.4 to 75 V (E24 range)
1
2
cathode
anode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
handbook, halfpage
1
2
• General regulation functions.
DESCRIPTION
Top view
MAM387
Low-power voltage regulator diodes encapsulated in a
very small SOD323 (SC-76) plastic SMD package.
The marking bar indicates the cathode.
The diodes are available in the normalized E24 ±2%
(BZX384-B) and approx. ±5% (BZX384-C) tolerance
range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
2004 Mar 22
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4 K1
BZX384-B2V7 K2
BZX384-B3V0 K3
BZX384-B3V3 K4
BZX384-B3V6 K5
BZX384-B3V9 K6
BZX384-B4V3 K7
BZX384-B4V7 K8
BZX384-B5V1 K9
BZX384-B5V6 L1
BZX384-B6V2 L2
BZX384-B6V8 L3
BZX384-B7V5 L4
BZX384-B8V2 L5
BZX384-B9V1 L6
BZX384-B16
BZX384-B18
BZX384-B20
BZX384-B22
BZX384-B24
BZX384-B27
BZX384-B30
BZX384-B33
BZX384-B36
BZX384-B39
M3
M4
M5
M6
M7
M8
M9
N0
N1
N2
BZX384-B43
BZX384-B47
BZX384-B51
BZX384-B56
BZX384-B62
BZX384-B68
BZX384-B75
N3
N4
N5
N6
N7
N8
N9
BZX384-B10
BZX384-B11
BZX384-B12
BZX384-B13
BZX384-B15
L7
L8
L9
M1
M2
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4 T3
BZX384-C2V7 T4
BZX384-C3V0 T5
BZX384-C3V3 T6
BZX384-C3V6 T7
BZX384-C3V9 T8
BZX384-C4V3 T9
BZX384-C4V7 T0
BZX384-C5V1 D5
BZX384-C5V6 D6
BZX384-C6V2 T1
BZX384-C6V8 D7
BZX384-C7V5 D8
BZX384-C8V2 D9
BZX384-C9V1 D0
BZX384-C16
BZX384-C18
BZX384-C20
BZX384-C22
BZX384-C24
BZX384-C27
BZX384-C30
BZX384-C33
BZX384-C36
BZX384-C39
DE
DF
DG
DH
DJ
BZX384-C43
BZX384-C47
BZX384-C51
BZX384-C56
BZX384-C62
BZX384-C68
BZX384-C75
DR
DS
DT
DU
DV
DW
DX
BZX384-C10
BZX384-C11
BZX384-C12
BZX384-C13
BZX384-C15
T2
DK
DL
DM
DN
DP
DA
DB
DC
DD
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
BZX384-B2V4
to
−
plastic surface mounted package; 2 leads
SOD323
BZX384-B75
BZX384-C2V4
to
BZX384-C75
2004 Mar 22
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2
UNIT
mA
IF
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
A
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
amb = 25 °C; prior to surge
Tamb = 25 °C; note 1
−
40
W
T
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
−
300
mW
°C
−65
−65
+150
+150
°C
Note
1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IR
IF = 10 mA; see Fig.3
IF = 100 mA; see Fig.3
0.9
1.1
V
V
reverse current;
BZX384-B/C2V4
BZX384-B/C2V7
BZX384-B/C3V0
BZX384-B/C3V3
BZX384-B/C3V6
BZX384-B/C3V9
BZX384-B/C4V3
BZX384-B/C4V7
BZX384-B/C5V1
BZX384-B/C5V6
BZX384-B/C6V2
BZX384-B/C6V8
BZX384-B/C7V5
BZX384-B/C8V2
BZX384-B/C9V1
BZX384-B/C10
BZX384-B/C11
BZX384-B/C12
BZX384-B/C13
BZX384-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2004 Mar 22
4
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Table 1 Per type BZX384-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE VZ (V)
at IZtest = 5 mA
DIFFERENTIAL RESISTANCE
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 µs;
TEMPERATURE
COEFFICIENTSZ (mV/K)
at IZtest = 5 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
rdif (Ω)
BZX-
Bxxx
Cxxx
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA at IZtest = 5 mA
(see Figs 4 and 5)
Tamb = 25 ˚C
MIN. MAX. MIN. MAX.
TYP.
275
MAX.
600
TYP.
70
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
TYP.
−1.6
MAX.
MAX.
MAX.
2V4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
0
450
6.0
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.9
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
3.2
0
3.5
0
3.8
0
4.1
0
4.6
0
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.4
6.0
6.6
40
2.3
7.2
30
6
1.2
3.0
7.9
30
80
6
2.5
4.0
8.7
40
80
6
3.2
4.6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
16.4
18.4
20.4
75
16
50
10.4
12.4
14.4
16.4
18.4
75
18
50
70
20
60
60
22
60
60
24
60
55
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Table 2 Per type BZX384-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE VZ (V)
at IZtest = 2 mA
DIFFERENTIAL RESISTANCE
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 µs;
TEMPERATURE
COEFFICIENTSZ (mV/K)
at IZtest = 2 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
rdif (Ω)
BZX-
Bxxx
Cxxx
Tol. ±2% (B)
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
(see Figs 4 and 5)
Tamb = 25 ˚C
MIN. MAX. MIN. MAX.
TYP.
65
MAX.
300
TYP.
25
MAX.
80
MIN.
21.4
TYP.
23.4
MAX.
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
MAX.
MAX.
27
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
50
1.0
30
33
36
39
43
47
51
56
62
68
75
70
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
50
45
45
45
40
40
40
40
35
35
35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction
to ambient
note 1
note 2
415
K/W
Rth(j-s)
thermal resistance from junction
to soldering point
110
K/W
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Soldering point of the cathode tab.
2004 Mar 22
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
10
100
(2)
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
0
3V3
4V7
3V0
2V4
2V7
−3
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX384-B/C2V4 to B/C4V3.
BZX384-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2004 Mar 22
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
99-09-13
03-12-17
SOD323
SC-76
2004 Mar 22
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX384 series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 22
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp11
Date of release: 2004 Mar 22
Document order number: 9397 750 12616
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