BZX384-B6V8,115 [NXP]
BZX384 series - Voltage regulator diodes SOD 2-Pin;型号: | BZX384-B6V8,115 |
厂家: | NXP |
描述: | BZX384 series - Voltage regulator diodes SOD 2-Pin 测试 光电二极管 |
文件: | 总11页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX384 series
Voltage regulator diodes
Product data sheet
2004 Mar 22
Supersedes data of 2003 Apr 01
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
FEATURES
PINNING
• Total power dissipation: max. 300 mW
PIN
1
DESCRIPTION
• Two tolerance series: ±2% and approx. ±5%
• Working voltage range: nominal 2.4 to 75 V (E24 range)
cathode
2
anode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
handbook, halfpage
1
2
• General regulation functions.
DESCRIPTION
Top view
MAM387
Low-power voltage regulator diodes encapsulated in a
very small SOD323 (SC-76) plastic SMD package.
The marking bar indicates the cathode.
The diodes are available in the normalized E24 ±2%
(BZX384-B) and approx. ±5% (BZX384-C) tolerance
range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
2004 Mar 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4 K1
BZX384-B2V7 K2
BZX384-B3V0 K3
BZX384-B3V3 K4
BZX384-B3V6 K5
BZX384-B3V9 K6
BZX384-B4V3 K7
BZX384-B4V7 K8
BZX384-B5V1 K9
BZX384-B5V6 L1
BZX384-B6V2 L2
BZX384-B6V8 L3
BZX384-B7V5 L4
BZX384-B8V2 L5
BZX384-B9V1 L6
BZX384-B16
BZX384-B18
BZX384-B20
BZX384-B22
BZX384-B24
BZX384-B27
BZX384-B30
BZX384-B33
BZX384-B36
BZX384-B39
M3
M4
M5
M6
M7
M8
M9
N0
N1
N2
BZX384-B43
BZX384-B47
BZX384-B51
BZX384-B56
BZX384-B62
BZX384-B68
BZX384-B75
N3
N4
N5
N6
N7
N8
N9
BZX384-B10
BZX384-B11
BZX384-B12
BZX384-B13
BZX384-B15
L7
L8
L9
M1
M2
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4 T3
BZX384-C2V7 T4
BZX384-C3V0 T5
BZX384-C3V3 T6
BZX384-C3V6 T7
BZX384-C3V9 T8
BZX384-C4V3 T9
BZX384-C4V7 T0
BZX384-C5V1 D5
BZX384-C5V6 D6
BZX384-C6V2 T1
BZX384-C6V8 D7
BZX384-C7V5 D8
BZX384-C8V2 D9
BZX384-C9V1 D0
BZX384-C16
BZX384-C18
BZX384-C20
BZX384-C22
BZX384-C24
BZX384-C27
BZX384-C30
BZX384-C33
BZX384-C36
BZX384-C39
DE
DF
DG
DH
DJ
BZX384-C43
BZX384-C47
BZX384-C51
BZX384-C56
BZX384-C62
BZX384-C68
BZX384-C75
DR
DS
DT
DU
DV
DW
DX
BZX384-C10
BZX384-C11
BZX384-C12
BZX384-C13
BZX384-C15
T2
DK
DL
DM
DN
DP
DA
DB
DC
DD
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
BZX384-B2V4
to
−
plastic surface mounted package; 2 leads
SOD323
BZX384-B75
BZX384-C2V4
to
BZX384-C75
2004 Mar 22
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2
UNIT
mA
IF
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
A
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
−
40
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
300
mW
°C
−65
−65
+150
+150
°C
Note
1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.3
MAX.
UNIT
VF
IR
0.9
1.1
V
V
IF = 100 mA; see Fig.3
reverse current;
BZX384-B/C2V4
BZX384-B/C2V7
BZX384-B/C3V0
BZX384-B/C3V3
BZX384-B/C3V6
BZX384-B/C3V9
BZX384-B/C4V3
BZX384-B/C4V7
BZX384-B/C5V1
BZX384-B/C5V6
BZX384-B/C6V2
BZX384-B/C6V8
BZX384-B/C7V5
BZX384-B/C8V2
BZX384-B/C9V1
BZX384-B/C10
BZX384-B/C11
BZX384-B/C12
BZX384-B/C13
BZX384-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2004 Mar 22
4
Table 1 Per type BZX384-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE VZ (V)
at IZtest = 5 mA
BZX-
DIFFERENTIAL RESISTANCE
dif (Ω)
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 μs;
TEMPERATURE
COEFFICIENTSZ (mV/K)
at IZtest = 5 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
r
Bxxx
Cxxx
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA at IZtest = 5 mA
(see Figs 4 and 5)
T
amb = 25 °C
MIN. MAX. MIN. MAX.
TYP.
275
MAX.
600
TYP.
70
MAX.
MIN.
−3.5
TYP.
−1.6
MAX.
MAX.
MAX.
2V4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
2.6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
0
450
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.9
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
3.2
0
3.5
0
3.8
0
4.1
0
4.6
0
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.4
6.0
6.6
40
2.3
7.2
30
6
1.2
3.0
7.9
30
80
6
2.5
4.0
8.7
40
80
6
3.2
4.6
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
10.20 9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80 11.20 10.4
11.80 12.20 11.4
12.70 13.30 12.4
14.70 15.30 13.8
15.70 16.30 15.3
17.60 18.40 16.8
19.60 20.40 18.8
21.60 22.40 20.8
23.50 24.50 22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
16.4
18.4
20.4
75
16
50
10.4
12.4
14.4
16.4
18.4
75
18
50
70
20
60
60
22
60
60
1.25
1.25
24
60
55
Table 2 Per type BZX384-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE VZ (V)
at IZtest = 2 mA
BZX-
DIFFERENTIAL RESISTANCE
dif (Ω)
NON-REPETITIVE
PEAK REVERSE
CURRENT IZSM (A)
at tp = 100 μs;
TEMPERATURE
COEFFICIENTSZ (mV/K)
at IZtest = 2 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
r
Bxxx
Cxxx
Tol. ±2% (B)
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
(see Figs 4 and 5)
T
amb = 25 °C
MIN. MAX. MIN. MAX.
TYP.
65
MAX.
300
TYP.
25
MAX.
80
MIN.
21.4
TYP.
23.4
MAX.
MAX.
MAX.
27
26.50 27.50 25.1
29.40 30.60 28.0
32.30 33.70 31.0
35.30 36.70 34.0
38.20 39.80 37.0
42.10 43.90 40.0
46.10 47.90 44.0
50.00 52.00 48.0
54.90 57.10 52.0
60.80 63.20 58.0
66.60 69.40 64.0
73.50 76.50 70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
30
33
36
39
43
47
51
56
62
68
75
70
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
50
45
45
45
40
40
40
40
35
35
35
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
0.25
0.2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction
to ambient
note 1
note 2
415
K/W
Rth(j-s)
thermal resistance from junction
to soldering point
110
K/W
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Soldering point of the cathode tab.
2004 Mar 22
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
200
10
(1)
10
100
(2)
0
0.6
1
10
0.8
1
−1
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
Z
(mV/K)
S
Z
11
4V3
(mV/K)
10
9V1
−1
5
3V9
8V2
7V5
6V8
3V6
6V2
5V6
5V1
−2
−3
0
3V3
4V7
3V0
2V4
2V7
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZX384-B/C2V4 to B/C4V3.
BZX384-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2004 Mar 22
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Mar 22
9
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX384 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 22
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp11
Date of release: 2004 Mar 22
Document order number: 9397 750 12616
相关型号:
BZX384-B6V8D5
DIODE 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode
VISHAY
BZX384-B6V8D6
DIODE 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode
VISHAY
BZX384-B75D5
DIODE 75 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode
VISHAY
BZX384-B75D6
DIODE 75 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明