BZX399-C11T/R [NXP]
DIODE 11 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode;型号: | BZX399-C11T/R |
厂家: | NXP |
描述: | DIODE 11 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode |
文件: | 总12页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZX399 series
Voltage regulator diodes
1999 Jun 04
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
FEATURES
PINNING
PIN
• Total power dissipation: max. 300 mW
• Tolerance: ±5%
DESCRIPTION
1
2
cathode
anode
• Working voltage range: nom. 1.8 to 43 V (E24 range)
• Improved IZ/VZ characteristic at low currents
(IZ = 50 µA). This results in a noise free and sharp
breakdown knee.
APPLICATIONS
handbook, halfpage
1
2
• General regulation functions, where low noise at low
currents is required
• Low power consumption applications
Top view
MAM387
(e.g. hand-held applications).
DESCRIPTION
Fig.1 Simplified outline (SOD323) and symbol.
Low-power low noise voltage regulator diodes in SOD323
plastic SMD package.
The diodes are available in the normalized E24 ±5%
tolerance range. The series consists of 34 types with
nominal working voltages from 1.8 to 43 V.
MARKING
MARKING
CODE
MARKING
CODE
MARKING
CODE
MARKING
CODE
TYPE NUMBER
TYPE NUMBER
TYPE NUMBER
TYPE NUMBER
BZX399-C1V8
BZX399-C2V0
BZX399-C2V2
BZX399-C2V4
BZX399-C2V7
BZX399-C3V0
BZX399-C3V3
BZX399-C3V6
BZX399-C3V9
B1
B2
B3
B4
B5
B6
B7
B8
B9
BZX399-C4V3
BZX399-C4V7
BZX399-C5V1
BZX399-C5V6
BZX399-C6V2
BZX399-C6V8
BZX399-C7V5
BZX399-C8V2
BZX399-C9V1
B0
BA
BB
BC
BD
BE
BF
BG
BH
BZX399-C10
BZX399-C11
BZX399-C12
BZX399-C13
BZX399-C15
BZX399-C16
BZX399-C18
BZX399-C20
BZX399-C22
BJ
BK
BL
BZX399-C24
BZX399-C27
BZX399-C30
BZX399-C33
BZX399-C36
BZX399-C39
BZX399-C43
BT
BU
BV
BM
BN
BP
BQ
BR
BS
BW
BX
BY
BZ
1999 Jun 04
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2
UNIT
mA
IF
continuous forward current
−
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
300
mW
°C
−65
−
+150
150
°C
Note
1. Device mounted on a FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX399-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IF = 10 mA; see Fig.5
IF = 100 mA; see Fig.5
0.9
1.0
V
V
IR
reverse current
BZX399-C1V8
BZX399-C2V0
BZX399-C2V2
BZX399-C2V4
BZX399-C2V7
BZX399-C3V0
BZX399-C3V3
BZX399-C3V6
BZX399-C3V9
BZX399-C4V3
BZX399-C4V7
BZX399-C5V1
BZX399-C5V6
BZX399-C6V2
BZX399-C6V8
BZX399-C7V5
BZX399-C8V2
BZX399-C9V1
BZX399-C10
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 3 V
VR = 3 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 7 V
VR = 8 V
VR = 9 V
VR = 10 V
VR = 0.7VZnom
2
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
1
0.5
0.2
0.05
0.02
2
1
0.5
0.1
2
1
1
0.1
0.01
0.1
0.2
0.1
0.1
0.05
0.05
0.05
0.01
BZX399-C11
BZX399-C12
BZX399-C13
BZX399-C15 to 43
1999 Jun 04
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
Table 1 Per type BZX399-C1V8 to C15
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
VOLTAGE
CHANGE
∆VZ(V)
TEMP. COEFF.
SZ (mV/K)
IZ = 50 µA
(see Figs 2, 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM (A) at tp = 100 µs;
Tamb = 25 °C
BZX399-C
XXX
IZ = 50 µA
(note 1)
Tol. ±5%
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
1V8
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
1.71
1.90
2.09
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
1.89
2.10
2.31
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
0.65
0.70
0.75
0.80
0.85
0.90
0.93
0.95
0.97
0.99
0.97
0.60
0.20
0.10
0.10
0.15
0.15
0.10
0.10
0.11
0.12
0.13
0.15
−0.85
−0.95
−1.05
−1.15
−1.35
−1.50
−1.65
−1.80
−1.95
−2.05
−1.90
0.15
425
410
390
370
350
325
310
300
290
280
275
300
275
250
215
170
150
120
110
110
105
105
100
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.0
1.75
2.35
3.00
3.60
4.25
5.00
5.80
11
6.70
12
7.65
13
8.60
15
10.50
Note
1. ∆VZ = VZ at 100 µA minus VZ at 10 µA.
1999 Jun 04
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
Table 2 Per type BZX399-C16 to C43
Tj = 25 °C unless otherwise specified.
WORKING
VOLTAGE
VZ (V)
VOLTAGE
CHANGE
∆VZ(V)
TEMP. COEFF.
SZ (mV/K)
IZ = 50 µA
(see Fig.4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM (A) at tp = 100 µs;
Tamb = 25 °C
BZX399- C
XXX
IZ = 50 µA
(note 1)
Tol. ±5%
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
16
18
20
22
24
27
30
33
36
39
43
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
0.16
0.18
0.20
0.22
0.24
0.27
0.30
0.30
0.30
0.30
0.30
11.4
13.3
15.3
17.2
19.2
22.0
25.2
28.5
32.0
35.1
39.4
95
95
90
85
80
75
65
60
60
60
55
1.5
1.5
1.5
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
Note
1. ∆VZ = VZ at 100 µA minus VZ at 10 µA.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point note 2
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth j-a
Rth j-s
note 1
415
110
Notes
1. Device mounted on a FR4 printed circuit-board.
2. Soldering point of the cathode tab.
1999 Jun 04
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
GRAPHICAL DATA
MDA989
0
C4V7
S
Z
(mV/K)
−0.8
C1V8
C4V3
C3V9
C2V0
C2V4
−1.6
C3V0
C3V6
C3V3
−2.4
3
2
10
10
10
I
(µA)
Z
Tj = 25 to 150 °C.
Fig.2 Temperature coefficient as a function of working current; typical values.
MDA990
MDA991
6
50
handbook, halfpage
handbook, halfpage
S
Z
S
Z
(mV/K)
(mV/K)
C43
C36
C8V2
40
30
20
4
C6V8
C6V2
C5V6
C30
2
0
C27
C24
C5V1
C18
C15
10
0
C12
C10
−2
10
2
3
2
3
10
10
10
10
10
I
(µA)
I
(µA)
Z
Z
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.3 Temperature coefficient as a function of
working current; typical values.
Fig.4 Temperature coefficient as a function of
working current; typical values.
1999 Jun 04
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
MBG781
300
handbook, halfpage
I
F
(mA)
200
100
0
0.6
0.8
1.0
V
(V)
F
Tj = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
1999 Jun 04
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
PACKAGE OUTLINE
SOD323
Plastic surface mounted package; 2 leads
Q
A
A
1
c
L
p
v
M
A
H
E
A
D
1
2
b
E
p
(1)
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max.
UNIT
A
b
c
D
E
H
L
p
Q
v
p
E
+ 0.05 0.40
− 0.05 0.25
0.25
0.10
1.1
0.8
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
mm
0.2
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOD323
98-09-14
1999 Jun 04
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 04
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
NOTES
1999 Jun 04
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
NOTES
1999 Jun 04
11
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© Philips Electronics N.V. 1999
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Printed in The Netherlands
115002/01/pp12
Date of release: 1999 Jun 04
Document order number: 9397 750 06054
相关型号:
BZX399-C15T/R
DIODE 15 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode
NXP
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