BZX585-B12,115 [NXP]
BZX585 series - Voltage regulator diodes SOD 2-Pin;型号: | BZX585-B12,115 |
厂家: | NXP |
描述: | BZX585 series - Voltage regulator diodes SOD 2-Pin 测试 光电二极管 |
文件: | 总10页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX585 series
Voltage regulator diodes
Product data sheet
2004 Jun 22
Supersedes data of 2004 Mar 26
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
FEATURES
PINNING
• Total power dissipation: max. 300 mW
• Two tolerance series: ± 2 % and ± 5 %
PIN
1
DESCRIPTION
cathode
anode
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
2
• Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS
handbook, halfpage
1
2
• General regulation functions.
Top view
MAM387
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an
ultra small SOD523 plastic SMD package.
The diodes are available in the normalized E24 ± 2 %
(BZX585-B) and ± 5 % (BZX585-C) tolerance range.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
The series consists of 37 types with nominal working
voltages from 2.4 V to 75 V.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585-B15
E1
E2
E3
E4
E5
E6
E7
E8
E9
E0
BZX585-B16
BZX585-B18
BZX585-B20
BZX585-B22
BZX585-B24
BZX585-B27
BZX585-B30
BZX585-B33
BZX585-B36
BZX585-B39
EA
EB
EC
ED
EE
EF
EG
EH
EK
EL
BZX585-B43
BZX585-B47
BZX585-B51
BZX585-B56
BZX585-B62
BZX585-B68
BZX585-B75
EM
EN
EP
ER
ES
ET
EU
2004 Jun 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
BZX585-C15
H1
H2
H3
H4
H5
H6
H7
H8
H9
H0
BZX585-C16
BZX585-C18
BZX585-C20
BZX585-C22
BZX585-C24
BZX585-C27
BZX585-C30
BZX585-C33
BZX585-C36
BZX585-C39
HA
HB
HC
HD
HE
HF
HG
HH
HK
HL
BZX585-C43
BZX585-C47
BZX585-C51
BZX585-C56
BZX585-C62
BZX585-C68
BZX585-C75
HM
HN
HP
HR
HS
HT
HU
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
DESCRIPTION
VERSION
BZX585-B2V4
to
BZX585-B75
−
Plastic surface mounted package; 2 leads
Plastic surface mounted package; 2 leads
SOD523
BZX585-C2V4
to
−
SOD523
BZX585-C75
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
200
see Tables 1 and 2
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave;
amb = 25 °C prior to surge
T
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
−
40
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
300
mW
°C
−65
−65
+150
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2004 Jun 22
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.2
IF = 100 mA; see Fig.2
MAX.
UNIT
VF
0.9
1.1
V
V
IR
reverse current
BZX585-B/C2V4
BZX585-B/C2V7
BZX585-B/C3V0
BZX585-B/C3V3
BZX585-B/C3V6
BZX585-B/C3V9
BZX585-B/C4V3
BZX585-B/C4V7
BZX585-B/C5V1
BZX585-B/C5V6
BZX585-B/C6V2
BZX585-B/C6V8
BZX585-B/C7V5
BZX585-B/C8V2
BZX585-B/C9V1
BZX585-B/C10
BZX585-B/C11
BZX585-B/C12
BZX585-B/C13
BZX585-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2004 Jun 22
4
Table 1 Per type BZX585-B/C2V4 to B/C24
Tamb = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see figs 3 AND 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
DIFFERENTIAL RESISTANCE
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs
VZ (V)
rdif (Ω)
BZX585-
at IZtest = 5 mA
B or C
XXX
Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA
MIN. MAX. MIN. MAX. TYP. MAX.
275 400
at IZtest = 5 mA
TYP.
70
MAX.
100
TYP.
MAX.
MAX.
2V4
2.35 2.45
2.65 2.75
2.94 3.06
3.23 3.37
3.53 3.67
3.82 3.98
4.21 4.39
4.61 4.79
5.00 5.20
5.49 5.71
6.08 6.32
6.66 6.94
7.35 7.65
8.04 8.36
8.92 9.28
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
300
325
350
375
400
410
425
400
80
450
500
500
500
500
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
40
2.2
30
6
3.0
15
80
2
3.6
20
80
2
4.3
20
100
150
150
150
170
200
200
225
225
250
250
2
5.2
9.80 10.20 9.50
10.50 20
2
6.0
11
10.78 11.22 10.45 11.55 25
11.76 12.24 11.40 12.60 25
12.74 13.26 12.35 13.65 25
14.70 15.30 14.25 15.75 25
15.68 16.32 15.20 16.80 50
17.64 18.36 17.10 18.90 50
19.60 20.40 19.00 21.00 60
21.56 22.44 20.90 23.10 60
23.52 24.48 22.80 25.20 60
2
6.9
12
2
7.9
13
2
8.8
15
3
10.7
12.4
14.4
16.4
18.4
20.4
16
10
10
15
20
25
18
80
20
70
22
60
24
55
Table 2 Per type BZX585-B/C27 to B/C75
Tamb = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
DIFFERENTIAL RESISTANCE
VZ (V)
rdif (Ω)
BZX585-
at IZtest = 2 mA
B or C
IZSM (A) at tp = 100 μs
XXX
Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN.
MAX. MIN. MAX.
TYP.
MAX.
300
TYP.
25
MAX.
80
TYP.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
27.54 25.65 28.35 65
30.60 28.50 31.50 70
33.66 31.35 34.65 75
36.72 34.20 37.80 80
39.78 37.05 40.95 80
43.86 40.85 45.15 85
47.94 44.65 49.35 85
52.02 48.45 53.55 90
57.12 53.20 58.80 100
63.24 58.90 65.10 120
69.36 64.60 71.40 150
76.50 71.25 78.75 170
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
50
1.0
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
50
45
45
45
40
40
40
40
35
35
35
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
80
90
130
150
170
180
200
215
240
255
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
Rth(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
350
65
K/W
K/W
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2. Solder point at cathode tab.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
GRAPHICAL DATA
MBG781
MLD444
300
0.5
handbook, halfpage
handbook, halfpage
S
Z
I
F
(mV/K)
0
4V7
(mA)
4V3
200
−0.5
2V4
2V7
3V9
3V6
−1
−1.5
−2
100
3V3
3V0
0
0.6
0.8
1
−1
2
V
(V)
10
1
10
10
F
I
(mA)
Z
BZX585-B/C2V4 to B/C4V7.
Tamb = 25 °C.
Tamb = 25 °C to 150 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
MLD445
12
handbook, halfpage
15
S
Z
(mV/K)
13
12
8
11
10
9V1
8V2
4
0
7V5
6V8
6V2
5V6
5V1
−4
−1
2
10
1
10
10
I
(mA)
Z
BZX585-B/C5V1 to B/C15.
amb = 25 °C to 150 °C.
T
Fig.4 Temperature coefficient as a function of
working current; typical values.
2004 Jun 22
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
02-12-13
06-03-16
SOD523
SC-79
2004 Jun 22
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jun 22
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp10
Date of release: 2004 Jun 22
Document order number: 9397 750 13303
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