BZX84J-C4V3 [NXP]
Single Zener diodes; 单齐纳二极管型号: | BZX84J-C4V3 |
厂家: | NXP |
描述: | Single Zener diodes |
文件: | 总12页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84J series
Single Zener diodes
Rev. 01 — 1 March 2007
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Non-repetitive peak reverse power
I Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
dissipation: ≤ 40 W
I Total power dissipation: ≤ 550 mW
I Two tolerance series: ±2 % and ±5 %
I Low differential resistance
I Small plastic package suitable for
surface-mounted design
1.3 Applications
I General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
1.1
40
Unit
V
[1]
[2]
VF
forward voltage
IF = 100 mA
-
-
-
-
PZSM
non-repetitive peak reverse
power dissipation
W
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
2
1
006aaa152
[1] The marking bar indicates the cathode.
BZX84J series
NXP Semiconductors
Single Zener diodes
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 2 leads
Version
BZX84J-B2V4 to
BZX84J-C75[1]
SC-90
SOD323F
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
BZX84J-B2V4
BZX84J-B2V7
BZX84J-B3V0
BZX84J-B3V3
BZX84J-B3V6
BZX84J-B3V9
BZX84J-B4V3
BZX84J-B4V7
BZX84J-B5V1
BZX84J-B5V6
BZX84J-B6V2
BZX84J-B6V8
BZX84J-B7V5
BZX84J-B8V2
BZX84J-B9V1
BZX84J-B10
BZX84J-B11
BZX84J-B12
BZX84J-B13
SL
SM
ST
SU
SV
SW
SZ
TA
BZX84J-B15
BZX84J-B16
BZX84J-B18
BZX84J-B20
BZX84J-B22
BZX84J-B24
BZX84J-B27
BZX84J-B30
BZX84J-B33
BZX84J-B36
BZX84J-B39
BZX84J-B43
BZX84J-B47
BZX84J-B51
BZX84J-B56
BZX84J-B62
BZX84J-B68
BZX84J-B75
-
SC
SD
SE
SF
SG
SH
SK
SN
SP
SR
SS
SX
SY
TB
TC
TF
TG
TL
BZX84J-C2V4
BZX84J-C2V7
BZX84J-C3V0
BZX84J-C3V3
BZX84J-C3V6
BZX84J-C3V9
BZX84J-C4V3
BZX84J-C4V7
BZX84J-C5V1
BZX84J-C5V6
BZX84J-C6V2
BZX84J-C6V8
BZX84J-C7V5
BZX84J-C8V2
BZX84J-C9V1
BZX84J-C10
BZX84J-C11
BZX84J-C12
BZX84J-C13
U3
U4
U9
UA
UB
UC
UF
UG
UL
UM
UR
US
UU
UV
UW
TR
TS
TT
BZX84J-C15
BZX84J-C16
BZX84J-C18
BZX84J-C20
BZX84J-C22
BZX84J-C24
BZX84J-C27
BZX84J-C30
BZX84J-C33
BZX84J-C36
BZX84J-C39
BZX84J-C43
BZX84J-C47
BZX84J-C51
BZX84J-C56
BZX84J-C62
BZX84J-C68
BZX84J-C75
-
TV
TW
TX
TY
TZ
U1
U2
U5
U6
U7
U8
UD
UE
UH
UK
UN
UP
UT
-
TD
TE
TH
TK
TM
TN
TP
S8
S9
SA
SB
-
TU
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
2 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IF
Parameter
Conditions
Min
Max
Unit
forward current
-
-
250
mA
[1]
IZSM
non-repetitive peak reverse
current
see
Table 8
and 9
[1]
[2]
PZSM
non-repetitive peak reverse
power dissipation
-
40
W
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
550
mW
°C
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
230
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
55
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1]
VF
forward voltage
IF = 10 mA
-
-
-
-
0.9
1.1
V
IF = 100 mA
V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
3 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24
Tj = 25 °C unless otherwise specified.
BZX84J Sel
-xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature
coefficient
Diode
Non-repetitive
capacitance peak reverse
current
IZSM (A)[2]
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Cd (pF)[1]
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Max
Min
2.35
2.2
Max
Max
Max
Max
VR (V) Min
Max
Max
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.45
2.6
400
100
50
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2
0
450
12
2.65
2.5
2.75
2.9
450
500
500
500
500
600
500
480
400
150
80
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
20
10
5
0
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
12
12
12
12
12
12
12
12
12
12
12
4
2.94
2.8
3.06
3.2
0
3.23
3.1
3.37
3.5
0
3.53
3.4
3.67
3.8
5
0
3.82
3.7
3.98
4.1
3
0
4.21
4
4.39
4.6
3
0
4.61
4.4
4.79
5
3
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
5
5.2
2
4.8
5.4
5.49
5.2
5.71
6
1
6.08
5.8
6.32
6.6
3
0.4
6.66
6.4
6.94
7.2
2
1.2
7.35
7
7.65
7.9
80
1
2.5
8.04
7.7
8.36
8.7
80
0.7
0.5
0.2
0.1
0.1
3.2
4
8.92
8.5
9.28
9.6
100
150
150
150
3.8
3
9.8
10.2
10.6
11.2
11.6
12.2
12.7
4.5
8
3
9.4
11
10.8
10.4
11.8
11.4
5.4
9
2.5
2.5
12
6
10
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
4 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued
Tj = 25 °C unless otherwise specified.
BZX84J Sel
-xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature
coefficient
Diode
Non-repetitive
capacitance peak reverse
current
IZSM (A)[2]
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Cd (pF)[1]
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Max
Min
Max
Max
Max
Max
VR (V) Min
Max
Max
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
170
10
0.1
8
7
11
13
14
16
18
20
22
103
2.5
200
200
225
225
250
250
15
20
20
20
25
30
0.05
0.05
0.05
0.05
0.05
0.05
10.5
11.2
12.6
14
9.2
99
97
93
88
84
80
2
10.4
12.4
14.4
16.4
18.4
1.5
1.5
1.5
1.25
1.25
15.4
16.8
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
5 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 9.
Characteristics per type; BZX84J-B27 to BZX84J-C75
Tj = 25 °C unless otherwise specified.
BZX84J- Sel
xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature Diode
Non-repetitive
coefficient
capacitance peak reverse
current
IZSM (A)[2]
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Cd (pF)[1]
IZ = 2 mA
IZ = 0.5 mA IZ = 2 mA
IZ = 2 mA
Min
26.5
25.1
29.4
28
Max
Max
Max
Max
VR (V) Min
Max
Max
Max
27
30
33
36
39
43
47
51
56
62
68
75
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
27.5
28.9
30.6
32
250
40
0.05
18.9
21.4
24.4
27.4
30.4
33.4
37.6
42
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
73
1
250
275
300
300
325
325
350
375
400
400
400
40
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
21
66
60
59
58
56
55
52
49
44
40
35
1
32.3
31
33.7
35
40
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
35.3
34
36.7
38
60
38.2
37
39.8
41
75
42.1
40
43.9
46
80
46.1
44
47.9
50
90
50
52
110
120
140
160
175
46.6
52.2
58.8
65.6
73.4
48
54
54.9
52
57.1
60
60.8
58
63.2
66
66.6
64
69.4
72
73.5
70
76.5
79
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
6 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
mbg801
mbg781
3
10
300
P
I
ZSM
F
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1
1
10
t
(ms)
V
(V)
p
F
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2. Forward current as a function of forward
voltage; typical values
mld444
mld445
0.5
12
S
15
Z
S
Z
(mV/K)
4V7
(mV/K)
13
12
0
8
11
10
4V3
−0.5
−1
9V1
8V2
7V5
6V8
6V2
2V4
4
0
2V7
3V9
3V6
5V6
5V1
−1.5
−2
3V3
3V0
−4
10
−1
2
−1
2
10
1
10
10
1
10
10
I
(mA)
I
(mA)
Z
Z
BZX84J-B/C2V4 to BZX84J-B/C4V7
BZX84J-B/C5V1 to BZX84J-B/C15
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
7 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
006aaa996
006aaa997
50
30
V
(V) = 10
V
(V) = 2.7
Z(nom)
Z(nom)
I
Z
I
Z
(mA)
3.3
3.9
4.7
5.6
(mA)
25
40
12
20
15
10
5
6.8
8.2
30
20
10
0
15
18 22
27
33 36
0
0
2
4
6
8
10
0
10
20
30
40
V
(V)
V (V)
Z
Z
Tj = 25 °C
BZX84J-B/C2V7 to BZX84J-B/C8V2
All curves have a test current IZ = 5 mA.
Tj = 25 °C
BZX84J-B/C10 to BZX84J-B/C36
For the curves VZ(nom) = (10, 12, 15, 18, 22) V the
test current IZ = 5 mA.
For the curves VZ(nom) = (27, 33, 36) V the test
current IZ = 2 mA.
Fig 5. Working current as a function of working
voltage; typical values
Fig 6. Working current as a function of working
voltage; typical values
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
8 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
8. Package outline
1.35
1.15
0.80
0.65
0.5
0.3
1
2.7 1.8
2.3 1.6
2
0.40
0.25
0.25
0.10
Dimensions in mm
04-09-13
Fig 7. Package outline SOD323F (SC-90)
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
10000
BZX84J-B2V4 to SOD323F 4 mm pitch, 8 mm tape and reel
BZX84J-C75
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
10. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
occupied area
solder paste
1.65 0.95
0.50 0.60
msa433
0.50
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 8. Reflow soldering footprint SOD323F (SC-90)
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
9 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
11. Revision history
Table 11. Revision history
Document ID
Release date
20070301
Data sheet status
Change notice
Supersedes
BZX84J_SER_1
Product data sheet
-
-
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
10 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BZX84J_SER_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2007
11 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 March 2007
Document identifier: BZX84J_SER_1
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