BZX884-B24,315 [NXP]
BZX884 series - Voltage regulator diodes DFN 2-Pin;
| 型号： | BZX884-B24,315 |
| 厂家： | 
NXP |
| 描述： | BZX884 series - Voltage regulator diodes DFN 2-Pin 测试 二极管 |
| 文件： | 总10页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX884 series
Voltage regulator diodes
Product data sheet
2004 Mar 26
Supersedes data of 2003 May 15
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
FEATURES
DESCRIPTION
• Two tolerance series: ±2% and ±5%
Low-power voltage regulator diodes encapsulated in
SOD882 leadless ultra small plastic packages.
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approximately 10% of SOT23)
handbook, halfpage
• Power dissipation comparable to SOT23.
APPLICATIONS
Bottom view
MAM472
• General regulation functions
• ESD ultra high-speed switching
• High frequency applications
The marking bar indicates the cathode.
• Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1 Simplified outline (SOD882) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX884-B2V4 to BZX884-B75
BZX884-B2V4
BZX884-B2V7
BZX884-B3V0
BZX884-B3V3
BZX884-B3V6
BZX884-B3V9
BZX884-B4V3
BZX884-B4V7
BZX884-B5V1
BZX884-B5V6
A1
A2
A3
A4
A5
A6
A7
A8
A9
AA
BZX884-B6V2
BZX884-B6V8
BZX884-B7V5
BZX884-B8V2
BZX884-B9V1
BZX884-B10
BZX884-B11
BZX884-B12
BZX884-B13
BZX884-B15
AB
AC
AD
AE
AF
AG
AH
AJ
BZX884-B16
BZX884-B18
BZX884-B20
BZX884-B22
BZX884-B24
BZX884-B27
BZX884-B30
BZX884-B33
BZX884-B36
BZX884-B39
C1
C2
C3
C4
C5
C6
C7
C8
C9
CA
BZX884-B43
BZX884-B47
BZX884-B51
BZX884-B56
BZX884-B62
BZX884-B68
BZX884-B75
CB
CC
CD
CE
CF
CG
CH
AK
AL
Marking codes for BZX884-C2V4 to BZX884-C75
BZX884-C2V4
BZX884-C2V7
BZX884-C3V0
BZX884-C3V3
BZX884-C3V6
BZX884-C3V9
BZX884-C4V3
BZX884-C4V7
BZX884-C5V1
BZX884-C5V6
B1
B2
B3
B4
B5
B6
B7
B8
B9
BA
BZX884-C6V2
BZX884-C6V8
BZX884-C7V5
BZX884-C8V2
BZX884-C9V1
BZX884-C10
BZX884-C11
BZX884-C12
BZX884-C13
BZX884-C15
BB
BC
BD
BE
BF
BG
BH
BJ
BZX884-C16
BZX884-C18
BZX884-C20
BZX884-C22
BZX884-C24
BZX884-C27
BZX884-C30
BZX884-C33
BZX884-C36
BZX884-C39
D1
D2
D3
D4
D5
D6
D7
D8
D9
DA
BZX884-C43
BZX884-C47
BZX884-C51
BZX884-C56
BZX884-C62
BZX884-C68
BZX884-C75
DB
DC
DD
DE
DF
DG
DH
BK
BL
2004 Mar 26
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
BZX884-B2V4
to
BZX884-B75
−
−
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
BZX884-C2V4
to
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
BZX884-C75
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
200
UNIT
IF
continuous forward current
−
mA
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave;
see Tables 1 and
2
T
amb = 25 °C; prior to surge
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
mW
°C
−65
−
+150
150
°C
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
thermal resistance from junction to ambient
note 1
500
2004 Mar 26
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IR
IF = 10 mA; see Fig.2
0.9
V
reverse current
BZX884-B/C2V4
BZX884-B/C2V7
BZX884-B/C3V0
BZX884-B/C3V3
BZX884-B/C3V6
BZX884-B/C3V9
BZX884-B/C4V3
BZX884-B/C4V7
BZX884-B/C5V1
BZX884-B/C5V6
BZX884-B/C6V2
BZX884-B/C6V8
BZX884-B/C7V5
BZX884-B/C8V2
BZX884-B/C9V1
BZX884-B/C10
BZX884-B/C11
BZX884-B/C12
BZX884-B/C13
BZX884-B/C15 to 75
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7 VZnom
50
20
10
5
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2004 Mar 26
4
Table 1 Per type BZX884-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
DIFFERENTIAL RESISTANCE
VZ (V)
at IZ = 5 mA
rdif (Ω)
BZX884-
B or C
XXX
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
TYP. MAX.
275 400
at IZtest = 5 mA
TYP. MAX.
70 100
MIN. MAX. MIN. MAX.
TYP.
MAX.
MAX.
2V4
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
450
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
300
325
350
375
400
410
425
400
80
450
500
500
500
500
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
40
2.2
30
6
3.0
15
80
2
3.6
20
80
2
4.3
20
100
150
150
150
170
200
200
225
225
250
250
2
5.2
10.20 9.50
10.50 20
2
6.0
11
10.78 11.22 10.45 11.55 25
11.76 12.24 11.40 12.60 25
12.74 13.26 12.35 13.65 25
14.70 15.30 14.25 15.75 25
15.68 18.32 15.20 16.80 50
17.64 18.36 17.10 18.90 50
19.60 20.40 19.00 21.00 60
21.56 22.44 20.90 23.10 60
23.52 24.48 22.80 25.20 60
2
6.9
12
2
7.9
13
2
8.8
15
3
10.7
12.4
14.4
16.4
18.4
20.4
16
10
10
15
20
25
18
80
20
70
22
60
24
55
Table 2 Per type BZX884-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
DIFFERENTIAL RESISTANCE
VZ (V)
at IZ = 2 mA
rdif (Ω)
BZX884-
B or C
XXX
Tol. ±2% (B)
Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
TYP. MAX. TYP. MAX.
300 25 80
MIN. MAX. MIN. MAX.
TYP.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.46 27.54 25.65 28.35 65
29.40 30.60 28.50 31.50 70
32.34 33.66 31.35 34.65 75
35.28 36.72 34.20 37.80 80
38.22 39.78 37.05 40.95 80
42.14 43.86 40.85 45.15 85
46.06 47.94 44.65 49.35 85
49.98 52.02 48.45 53.55 90
54.88 57.12 53.20 58.80 100
60.76 63.24 58.90 65.10 120
66.64 69.36 64.60 71.40 150
73.50 76.50 71.25 78.75 170
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
50
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
300
325
350
350
375
375
400
425
450
475
500
30
35
35
40
45
50
60
70
80
90
95
80
50
45
45
45
40
40
40
40
35
35
35
80
90
130
150
170
180
200
215
240
255
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
GRAPHICAL DATA
MLD444
MBG781
0.5
300
handbook, halfpage
handbook, halfpage
S
Z
(mV/K)
0
4V7
I
F
(mA)
4V3
200
−0.5
2V4
2V7
3V9
3V6
−1
−1.5
−2
100
3V3
3V0
0
0.6
−1
2
10
1
10
10
0.8
1
V
(V)
I
(mA)
F
Z
BZX884-B/C2V4 to B/C4V7.
Tj = 25 °C.
Tj = 25 to 150 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
MLD445
12
handbook, halfpage
15
S
Z
(mV/K)
13
12
8
11
10
9V1
8V2
4
0
7V5
6V8
6V2
5V6
5V1
−4
−1
2
10
1
10
10
I
(mA)
Z
BZX884-B/C5V1 to B/C15.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
2004 Mar 26
7
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e
1
A
A
1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
D
E
e
L
1
max.
0.50
0.46
0.55 0.62 1.02
0.47 0.55 0.95
0.30
0.22
mm
0.03
0.65
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-04-16
03-04-17
SOD882
2004 Mar 26
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
SOLDERING
Reflow soldering is the only recommended soldering method.
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2004 Mar 26
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp10
Date of release: 2004 Mar 26
Document order number: 9397 750 12713
相关型号：
©2020 ICPDF网 联系我们和版权申明