C0603C104J5RAC [NXP]
Heterojunction Bipolar Transistor Technology (InGaP HBT);
| 型号： | C0603C104J5RAC |
| 厂家： | 
NXP |
| 描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) 电容器 |
| 文件： | 总14页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3015NT1
Rev. 4, 9/2014
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3015NT1
Broadband High Linearity Amplifier
The MMG3015NT1 is a general purpose amplifier that is internally input
and output matched. It is designed for a broad range of Class A, small--
signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
0--6000 MHz, 15.5 dB
20.5 dBm
InGaP HBT GPA
Features
Frequency: 0--6000 MHz
P1dB: 20.5 dBm @ 900 MHz
Small--Signal Gain: 15.5 dB @ 900 MHz
Third Order Output Intercept Point: 36 dBm @ 900 MHz
Single 5 V Supply
Active Bias Control
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
900
Symbol MHz
2140 3500
Characteristic
MHz
MHz
Unit
V
7
300
CC
CC
Small--Signal Gain
(S21)
G
15.5
-- 1 5
-- 1 3
20.5
36
14.5
12.5
dB
p
Supply Current
I
mA
dBm
C
RF Input Power
P
12
in
Input Return Loss
(S11)
IRL
ORL
P1dB
OIP3
-- 1 9
-- 9
-- 1 9
-- 7
dB
dB
Storage Temperature Range
Junction Temperature
T
stg
--65 to +150
175
T
J
C
Output Return Loss
(S22)
Power Output @1dB
Compression
20.5
33.5
18.5
30.5
dBm
dBm
Third Order Output
Intercept Point
1. V = 5 Vdc, T = 25C, 50 ohm system.
CC
A
Table 3. Thermal Characteristics
(2)
Characteristic
Symbol
Value
Unit
C/W
Thermal Resistance, Junction to Case
R
41.5
JC
Case Temperature 95C, 5 Vdc, 95 mA, no RF applied
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2007--2008, 2012, 2014. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25C, 50 ohm system, in Freescale Application Circuit)
CC
A
Characteristic
Symbol
Min
14
—
Typ
15.5
-- 1 5
-- 1 3
20.5
36
Max
—
Unit
dB
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
OIP3
NF
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
—
—
5.6
95
—
Supply Current
I
80
—
120
—
mA
V
CC
Supply Voltage
V
5
CC
Table 5. Functional Pin Description
Pin
2
Number
Pin Function
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
1
260
C
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
2
50 OHM TYPICAL CHARACTERISTICS
0
18
16
14
12
T
= 85C
-- 4 0 C
C
25C
-- 5
-- 1 0
-- 1 5
-- 2 0
S22
S11
10
8
V
= 5 Vdc
CC
V
= 5 Vdc
CC
-- 2 5
0
1
2
3
4
5
6
3.5
4
0
1
2
3
4
5
6
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Loss versus Frequency
16
22
21
20
19
900 MHz
15
14
13
12
11
10
2140 MHz
1960 MHz
2600 MHz
18
17
16
15
3500 MHz
V
= 5 Vdc
V
= 5 Vdc
3
CC
CC
14
0.5
1
1.5
2
2.5
10
12
14
16
18
20
22
P
, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
out
Figure 4. Small--Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
38
36
34
32
30
160
140
120
100
80
60
40
28
26
20
V
= 5 Vdc
CC
1 MHz Tone Spacing
0
0
1
2
3
4
5
6
0
1
2
3
V
, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
CC
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS
38
38
37
37
36
36
35
35
34
33
V
= 5 Vdc
34
CC
f = 900 MHz
1 MHz Tone Spacing
f = 900 MHz
1 MHz Tone Spacing
33
4.8
4.9
5
5.1
5.2
-- 4 0
-- 2 0
0
2 0
4 0
6 0
8 0
100
V
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
Figure 9. Third Order Output Intercept Point
versus Case Temperature
5
10
10
10
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
4
3
V
= 5 Vdc
CC
f = 900 MHz
1 MHz Tone Spacing
120
125
130
135
140
145
150
5
10
15
20
P
, OUTPUT POWER (dBm)
T , JUNCTION TEMPERATURE (C)
J
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 95 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power
CC
CC
Figure 11. MTTF versus Junction Temperature
-- 2 0
8
V
= 5 Vdc, f = 2140 MHz
CC
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 8.5 dB @
0.01% Probability (CCDF)
-- 3 0
-- 4 0
6
4
2
0
-- 5 0
-- 6 0
-- 7 0
V
= 5 Vdc
CC
0
1
2
3
4
2
4
6
8
10
12
14
16
18
20
f, FREQUENCY (GHz)
P
, OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
4
50 OHM APPLICATION CIRCUIT: 40--800 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
Z4
PCB
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031, = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
10
S21
S11
R1
0
C4
C3
L1
-- 1 0
-- 2 0
-- 3 0
-- 4 0
C2
C1
S22
MMG30XX
Rev 2
V
= 5 Vdc
CC
0
200
400
f, FREQUENCY (MHz)
600
800
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 F Chip Capacitors
Part Number
C0603C103J5RAC
C0603C104J5RAC
C0603C105J5RAC
BK2125HM471--T
CRCW06030000FKEA
Manufacturer
Kemet
C1, C2
C3
0.1 F Chip Capacitor
1 F Chip Capacitor
Kemet
C4
Kemet
L1
470 nH Chip Inductor
0 Ω, 1/10 W Chip Resistor
Taiyo Yuden
Vishay
R1
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 800--3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
Z4
PCB
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031, = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
30
20
10
R1
S21
C4
C3
L1
0
C2
C1
S22
S11
-- 1 0
-- 2 0
-- 3 0
MMG30XX
Rev 2
V
= 5 Vdc
CC
800
1200
1600
2000
2400
2800
3200
3600
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
C0603C151J5RAC
C0603C104J5RAC
C0603C105J5RAC
HK160856NJ--T
Manufacturer
Kemet
C1, C2
C3
0.1 F Chip Capacitor
1 F Chip Capacitor
56 nH Chip Inductor
Kemet
C4
Kemet
L1
Taiyo Yuden
Vishay
R1
0 Ω, 1/10 W Chip Resistor
CRCW06030000FKEA
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
6
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System)
CC
A
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
|S
|
21
|S
|
12
|S |
22
200
250
0.28
0.28
0.27
0.27
0.27
0.26
0.26
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.23
0.23
0.23
0.23
0.23
0.24
0.25
0.26
0.28
0.28
0.28
0.28
0.29
0.29
0.29
0.29
0.29
0.29
174.23
172.92
171.92
170.57
169.49
168.53
167.16
165.92
164.77
163.38
162.57
161.36
160.35
159.29
158.03
157.14
156.02
154.89
153.09
152.30
151.41
150.63
150.09
149.52
149.15
148.71
147.76
146.51
145.11
138.41
132.77
128.41
124.16
119.27
118.39
117.49
116.75
116.03
115.21
114.41
113.69
112.97
112.24
6.17
6.16
6.15
6.14
6.12
6.11
6.10
6.08
6.06
6.05
6.03
6.01
5.99
5.97
5.95
5.93
5.91
5.88
5.83
5.80
5.77
5.75
5.72
5.69
5.67
5.65
5.62
5.60
5.57
5.41
5.23
5.05
4.87
4.69
4.65
4.62
4.59
4.55
4.52
4.48
4.44
4.41
4.37
171.48
169.36
167.25
165.15
163.07
160.97
158.87
156.78
154.73
152.65
150.58
148.53
146.50
144.45
142.41
140.38
138.38
136.37
132.34
130.37
128.39
126.41
124.46
122.50
120.54
118.61
116.65
114.72
112.79
103.23
93.77
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
--2.66
0.06
0.07
0.08
0.09
0.09
0.10
0.11
0.12
0.13
0.14
0.14
0.15
0.16
0.17
0.18
0.18
0.19
0.20
0.21
0.22
0.22
0.23
0.24
0.24
0.25
0.26
0.26
0.27
0.28
0.31
0.35
0.38
0.40
0.43
0.44
0.44
0.45
0.46
0.46
0.47
0.48
0.48
0.49
--43.26
--50.81
--56.75
--62.45
--67.13
--71.09
--74.88
--77.99
--81.75
--85.06
--88.16
--91.28
--93.96
--96.90
--99.99
--102.70
--105.47
--108.27
--114.23
--117.17
--120.26
--123.42
--126.34
--129.61
--132.32
--134.63
--136.77
--138.90
--141.13
--152.46
--163.83
--175.54
172.45
161.50
159.35
157.23
154.83
152.37
150.02
147.68
145.58
143.48
141.43
--3.32
300
--3.93
350
--4.60
400
--5.22
450
--5.85
500
--6.50
550
--7.14
600
--7.76
650
--8.41
700
--9.03
750
--9.64
800
--10.26
--10.88
-- 11 . 5 2
--12.14
--12.78
--13.38
--14.64
--15.28
--15.94
--16.57
--17.17
--17.81
--18.46
--19.07
--19.73
--20.39
--21.04
--24.38
--27.79
--31.33
--35.09
--39.03
--39.86
--40.65
--41.48
--42.33
--43.16
--44.01
--44.83
--45.67
--46.48
850
900
950
1000
1050
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1900
2150
2400
2650
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
84.48
75.21
66.04
64.24
62.43
60.59
58.77
56.97
55.15
53.36
51.59
49.84
(continued)
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System) (continued)
CC
A
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
|S
|
21
|S
|
12
|S |
22
3400
3450
3500
3550
3600
0.29
0.29
0.29
0.29
0.29
111.50
110.37
109.50
108.57
107.57
4.34
4.30
4.27
4.23
4.20
48.07
45.96
44.53
42.83
41.14
0.09
0.09
0.09
0.09
0.09
--47.31
--48.32
--49.01
--49.82
--50.64
0.49
0.50
0.50
0.51
0.52
139.46
137.08
135.57
133.81
132.08
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
8
1.90
3.00
2X
45
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 20. PCB Pad Layout for SOT--89A
M3015N
YYWW
Figure 21. Product Marking
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
10
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
12
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3100: General Purpose Amplifier and MMIC Biasing
Software
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2007
Apr. 2008
Initial Release of Data Sheet
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis
(ACPR) unit of measure to dBc, p. 5
Updated Part Numbers in Tables 8, 9, Component Designations and Values, to latest RoHS compliant
part numbers, pp. 6, 7
2
Feb. 2012
Corrected temperature at which ThetaJC is measured from 25C to 95C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 3
Removed I bias callout from applicable graphs and Table 10, Common Emitter S--Parameters heading
CC
as bias is not a controlled value, pp. 4--9
Added .s2p File availability to Product Software and Printed Circuit Boards to Development Tools, p. 14
3
4
Sept. 2012
Sept. 2014
Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02
(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has
slight dimensional differences, pp. 1, 10--13. Refer to PCN13337, GaAs Fab Transfer.
Added Fig. 21, Product Marking, p. 10
Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
Added Failure Analysis information, p. 13
MMG3015NT1
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2007–2008, 2012, 2014 Freescale Semiconductor, Inc.
Document Number: MMG3015NT1
Rev. 4, 9/2014
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