C0805C220J5GAC [NXP]

Heterojunction Bipolar Transistor Technology (InGaP HBT);
C0805C220J5GAC
型号: C0805C220J5GAC
厂家: NXP    NXP
描述:

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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Document Number: MMG3014NT1  
Rev. 5, 3/2016  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
MMG3014NT1  
Broadband High Linearity Amplifier  
The MMG3014NT1 is a general purpose amplifier that is input and output  
internally prematched. It is designed for a broad range of Class A,  
small--signal, high linearity, general purpose applications. It is suitable for  
applications with frequencies from 40 to 4000 MHz such as cellular, PCS,  
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.  
40--4000 MHz, 19.5 dB  
25 dBm  
InGaP HBT GPA  
Features  
Frequency: 40--4000 MHz  
P1dB: 25 dBm @ 900 MHz  
Small--Signal Gain: 19.5 dB @ 900 MHz  
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  
Single 5 V Supply  
Active Bias  
Cost--effective SOT--89 Surface Mount Plastic Package  
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.  
SOT--89  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
900 2140 3500  
Symbol MHz MHz MHz Unit  
Characteristic  
V
6
300  
CC  
CC  
Small--Signal Gain  
(S21)  
G
19.5  
-- 2 5  
-- 11  
25  
15  
-- 1 2  
-- 1 3  
10  
dB  
p
Supply Current  
I
mA  
dBm  
C  
RF Input Power  
P
25  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
OIP3  
-- 8  
dB  
Storage Temperature Range  
Junction Temperature  
T
stg  
--65 to +150  
175  
T
J
C  
Output Return Loss  
(S22)  
-- 1 9  
25  
dB  
Power Output @1dB  
Compression  
25.8  
dBm  
dBm  
Third Order Output  
Intercept Point  
40.5 40.5  
40  
1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit  
CC  
A
tuned for specified frequency.  
Table 3. Thermal Characteristics  
(2)  
Characteristic  
Symbol  
Value  
Unit  
C/W  
Thermal Resistance, Junction to Case  
R
27.4  
JC  
Case Temperature 81C, 5 Vdc, 135 mA, no RF applied  
2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved.  
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25C, 50 ohm system, in Freescale Application Circuit)  
CC  
A
Characteristic  
Symbol  
Min  
18.5  
Typ  
19.5  
-- 2 5  
-- 11  
25  
Max  
Unit  
dB  
Small--Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
G
p
IRL  
ORL  
P1dB  
OIP3  
NF  
dB  
dB  
Power Output @ 1dB Compression  
Third Order Output Intercept Point  
Noise Figure  
dBm  
dBm  
dB  
40.5  
5.7  
135  
5
Supply Current  
I
110  
160  
mA  
V
CC  
Supply Voltage  
V
CC  
Table 5. Functional Pin Description  
Pin  
2
Number  
Pin Function  
1
2
3
RF  
in  
Ground  
RF /DC Supply  
out  
1
2
3
Figure 1. Functional Diagram  
Table 6. ESD Protection Characteristics  
Test Conditions/Test Methodology  
Class  
1B  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
A
IV  
Table 7. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
1
260  
C  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
2
50 OHM TYPICAL CHARACTERISTICS  
0
25  
20  
S11  
-- 5  
15  
10  
5
S22  
T
= --40C  
C
25C  
85C  
V
= 5 Vdc  
V
= 5 Vdc  
CC  
CC  
-- 1 0  
0
1
2
3
4
3.5  
4
0
1
2
3
4
f, FREQUENCY (GHz)  
f, FREQUENCY (GHz)  
Figure 2. Small--Signal Gain (S21) versus  
Frequency  
Figure 3. Input/Output Return Loss versus  
Frequency  
23  
21  
19  
17  
15  
13  
26  
25  
V
= 5 Vdc  
CC  
900 MHz  
1960 MHz  
2140 MHz  
2600 MHz  
11  
9
V
= 5 Vdc  
3
CC  
3500 MHz  
24  
0.5  
1
1.5  
2
2.5  
6
10  
14  
18  
22  
26  
P
, OUTPUT POWER (dBm)  
f, FREQUENCY (GHz)  
out  
Figure 4. Small--Signal Gain versus Output  
Power  
Figure 5. P1dB versus Frequency  
42  
40  
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
V
= 5 Vdc  
1 MHz Tone Spacing  
CC  
38  
0
1
2
3
4
5
6
0
1
2
3
V
, COLLECTOR VOLTAGE (V)  
f, FREQUENCY (GHz)  
CC  
Figure 6. Collector Current versus Collector  
Voltage  
Figure 7. Third Order Output Intercept Point  
versus Frequency  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
3
50 OHM TYPICAL CHARACTERISTICS  
42  
40  
38  
42  
40  
V
= 5 Vdc  
CC  
f = 900 MHz  
1 MHz Tone Spacing  
f = 900 MHz  
1 MHz Tone Spacing  
38  
4.5  
4.7  
4.9  
5.1  
5.3  
5.5  
-- 4 0  
-- 2 0  
0
2 0  
4 0  
6 0  
8 0  
100  
V
, COLLECTOR VOLTAGE (V)  
T, TEMPERATURE (_C)  
CC  
Figure 8. Third Order Output Intercept Point  
versus Collector Voltage  
Figure 9. Third Order Output Intercept Point  
versus Case Temperature  
5
10  
10  
10  
-- 3 0  
-- 4 0  
-- 5 0  
4
3
-- 6 0  
-- 7 0  
-- 8 0  
V
= 5 Vdc  
CC  
f = 900 MHz  
1 MHz Tone Spacing  
120  
125  
130  
135  
140  
145  
150  
10  
13  
16  
19  
22  
25  
P
, OUTPUT POWER (dBm)  
T , JUNCTION TEMPERATURE (C)  
J
out  
NOTE: The MTTF is calculated with V = 5 Vdc, I = 135 mA  
Figure 10. Third Order Intermodulation versus  
Output Power  
CC  
CC  
Figure 11. MTTF versus Junction Temperature  
-- 2 0  
10  
8
V
= 5 Vdc, f = 2140 MHz  
CC  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF  
-- 3 0  
-- 4 0  
6
4
-- 5 0  
-- 6 0  
-- 7 0  
2
0
V
= 5 Vdc  
CC  
0
1
2
3
4
10  
13  
16  
19  
22  
25  
f, FREQUENCY (GHz)  
P
, OUTPUT POWER (dBm)  
out  
Figure 12. Noise Figure versus Frequency  
Figure 13. Single--Carrier W--CDMA Adjacent  
Channel Power Ratio versus Output Power  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
4
50 OHM APPLICATION CIRCUIT: 800--1000 MHz  
V
SUPPLY  
R1  
C3  
C4  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
C2  
C1  
CC  
C5  
C6  
C7  
Z1, Z8  
Z2, Z7  
Z3  
0.274x 0.058Microstrip  
0.073x 0.058Microstrip  
0.066x 0.058Microstrip  
0.509x 0.058Microstrip  
Z5  
Z6  
PCB  
0.172x 0.058Microstrip  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, = 4.1  
r
Z4  
Figure 14. 50 Ohm Test Circuit Schematic  
30  
20  
10  
S21  
R1  
C4  
C3  
0
-- 1 0  
-- 2 0  
-- 3 0  
-- 4 0  
C6  
C1  
C2  
L1  
S22  
C5  
C7  
S11  
V
= 5 Vdc  
MMG30XX  
Rev 2  
CC  
700  
800  
900  
f, FREQUENCY (MHz)  
1000  
1100  
Figure 15. S21, S11 and S22 versus Frequency  
Figure 16. 50 Ohm Test Circuit Component Layout  
Table 8. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
220 pF Chip Capacitors  
Part Number  
C0805C221J5GAC  
C0603C104J5RAC  
C0805C225J4RAC  
12065J0R2BS  
Manufacturer  
Kemet  
C1, C2  
C3  
0.1 F Chip Capacitor  
2.2 F Chip Capacitor  
0.2 pF Chip Capacitor  
4.7 pF Chip Capacitor  
1.8 pF Chip Capacitor  
10 nH Chip Inductor  
0 Chip Resistor  
Kemet  
C4  
Kemet  
C5  
AVX  
C6  
C0603C479J5GAC  
C1206C189D5GAC  
HK160810NJ--T  
Kemet  
C7  
Kemet  
L1  
Taiyo Yuden  
Panasonic  
R1  
ERJ3GEY0R00V  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
5
50 OHM APPLICATION CIRCUIT: 1800--2200 MHz  
V
SUPPLY  
R1  
C3  
C4  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
C2  
C1  
CC  
C5  
C6  
Z1, Z7  
Z2  
Z3  
0.347x 0.058Microstrip  
0.399x 0.058Microstrip  
0.176x 0.058Microstrip  
0.172x 0.058Microstrip  
Z5  
Z6  
PCB  
0.162x 0.058Microstrip  
0.241x 0.058Microstrip  
Getek Grade ML200C, 0.031, = 4.1  
r
Z4  
Figure 17. 50 Ohm Test Circuit Schematic  
20  
10  
S21  
R1  
C4  
C3  
C1  
C5  
C2  
L1  
0
S11  
S22  
-- 1 0  
C6  
V
= 5 Vdc  
CC  
MMG30XX  
Rev 2  
-- 2 0  
1600  
1800  
2000  
f, FREQUENCY (MHz)  
2200  
2400  
Figure 18. S21, S11 and S22 versus Frequency  
Figure 19. 50 Ohm Test Circuit Component Layout  
Table 9. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
22 pF Chip Capacitors  
Part Number  
C0805C220J5GAC  
C0603C104J5RAC  
C0805C225J4RAC  
C0603C159J5RAC  
C0603C119J5GAC  
HK160815NJ--T  
Manufacturer  
Kemet  
C1, C2  
C3  
0.1 F Chip Capacitor  
2.2 F Chip Capacitor  
1.5 pF Chip Capacitor  
1.1 pF Chip Capacitor  
15 nH Chip Inductor  
0 Chip Resistor  
Kemet  
C4  
Kemet  
C5  
Kemet  
C6  
Kemet  
L1  
Taiyo Yuden  
Panasonic  
R1  
ERJ3GEY0R00V  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
6
50 OHM APPLICATION CIRCUIT: 2300--2700 MHz  
V
SUPPLY  
R1  
C3  
C4  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
C2  
C1  
CC  
C5  
C6  
Z1, Z7  
Z2  
Z3  
0.347x 0.058Microstrip  
0.488x 0.058Microstrip  
0.087x 0.058Microstrip  
0.136x 0.058Microstrip  
Z5  
Z6  
PCB  
0.036x 0.058Microstrip  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, = 4.1  
r
Z4  
Figure 20. 50 Ohm Test Circuit Schematic  
20  
10  
0
S21  
R1  
C4  
C3  
C1  
C2  
L1  
S11  
C5  
-- 1 0  
-- 2 0  
-- 3 0  
C6  
V
= 5 Vdc  
CC  
S22  
MMG30XX  
Rev 2  
2100  
2300  
2500  
f, FREQUENCY (MHz)  
2700  
2900  
Figure 21. S21, S11 and S22 versus Frequency  
Figure 22. 50 Ohm Test Circuit Component Layout  
Table 10. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
22 pF Chip Capacitors  
Part Number  
C0805C220J5GAC  
C0603C104J5RAC  
C0805C225J4RAC  
C0603C119J5GAC  
HK160815NJ--T  
Manufacturer  
Kemet  
C1, C2  
C3  
0.1 F Chip Capacitor  
2.2 F Chip Capacitor  
1.1 pF Chip Capacitors  
15 nH Chip Inductor  
0 Chip Resistor  
Kemet  
C4  
Kemet  
C5, C6  
L1  
Kemet  
Taiyo Yuden  
Panasonic  
R1  
ERJ3GEY0R00V  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
7
50 OHM APPLICATION CIRCUIT: 3400--3600 MHz  
V
SUPPLY  
R1  
C3  
C4  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
C2  
C1  
CC  
C5  
C6  
C7  
Z1, Z8  
Z2  
Z3  
0.347x 0.058Microstrip  
0.068x 0.058Microstrip  
0.419x 0.058Microstrip  
0.088x 0.058Microstrip  
Z6  
Z7  
PCB  
0.084x 0.058Microstrip  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, = 4.1  
r
Z4, Z5  
Figure 23. 50 Ohm Test Circuit Schematic  
20  
10  
S21  
R1  
C4  
C3  
0
C5  
C1  
C2  
L1  
S11  
S22  
C6  
-- 1 0  
-- 2 0  
-- 3 0  
C7  
V
= 5 Vdc  
CC  
MMG30XX  
Rev 2  
3400  
3450  
3500  
f, FREQUENCY (MHz)  
3550  
3600  
Figure 24. S21, S11 and S22 versus Frequency  
Figure 25. 50 Ohm Test Circuit Component Layout  
Table 11. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
3.3 pF Chip Capacitor  
Part Number  
C0805C339J5GAC  
C0805C209J5GAC  
C0603C104J5RAC  
C0805C225J4RAC  
06035J0R6BS  
Manufacturer  
Kemet  
C1  
C2  
C3  
C4  
C5  
C6  
C7  
L1  
2.0 pF Chip Capacitor  
0.1 F Chip Capacitor  
2.2 F Chip Capacitor  
0.6 pF Chip Capacitor  
0.9 pF Chip Capacitor  
0.8 pF Chip Capacitor  
56 nH Chip Inductor  
0 Chip Resistor  
Kemet  
Kemet  
Kemet  
AVX  
06035J0R9BS  
AVX  
06035J0R8BS  
AVX  
HK160856NJ--T  
ERJ3GEY0R00V  
Taiyo Yuden  
Panasonic  
R1  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
8
50 OHM TYPICAL CHARACTERISTICS  
Table 12. Common Emitter S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System)  
CC  
A
S
S
S
S
22  
11  
21  
12  
f
MHz  
|S  
|
   
|S  
|
   
|S  
|
   
0.6  
|S |  
22  
   
11  
21  
12  
250  
300  
0.622  
0.618  
0.616  
0.613  
0.611  
0.611  
0.610  
0.610  
0.610  
0.611  
0.615  
0.618  
0.621  
0.625  
0.624  
0.624  
0.624  
0.625  
0.626  
0.628  
0.629  
0.632  
0.634  
0.636  
0.640  
0.643  
0.646  
0.649  
0.653  
0.657  
0.661  
0.665  
0.669  
0.673  
0.677  
0.681  
0.685  
0.689  
0.693  
0.697  
0.701  
0.705  
0.709  
174.6  
174.0  
173.4  
173.0  
172.5  
172.0  
171.4  
170.9  
170.4  
169.9  
169.5  
171.8  
171.4  
170.9  
170.2  
169.6  
168.9  
168.3  
167.6  
166.9  
166.1  
165.4  
164.6  
163.8  
163.0  
162.2  
161.3  
160.5  
159.7  
158.9  
158.0  
157.2  
156.4  
155.5  
154.7  
153.8  
153.0  
152.2  
151.3  
150.5  
149.6  
148.7  
147.8  
10.280  
10.107  
9.933  
9.760  
9.586  
9.300  
9.009  
8.716  
8.363  
8.064  
7.734  
7.403  
7.073  
6.838  
6.629  
6.422  
6.227  
6.044  
5.866  
5.700  
5.545  
5.393  
5.257  
5.117  
4.988  
4.864  
4.742  
4.630  
4.517  
4.414  
4.312  
4.215  
4.123  
4.033  
3.947  
3.864  
3.783  
3.707  
3.633  
3.562  
3.494  
3.426  
3.363  
153.8  
148.3  
143.1  
138.3  
133.8  
129.8  
126.0  
122.4  
119.2  
116.2  
113.3  
110.9  
108.4  
106.0  
103.7  
101.5  
99.4  
0.0336  
0.0336  
0.0337  
0.0337  
0.0338  
0.0338  
0.0339  
0.0339  
0.0340  
0.0340  
0.0341  
0.0342  
0.0342  
0.0343  
0.0343  
0.0344  
0.0344  
0.0346  
0.0347  
0.0349  
0.0351  
0.0352  
0.0354  
0.0355  
0.0356  
0.0357  
0.0359  
0.0360  
0.0361  
0.0362  
0.0363  
0.0364  
0.0364  
0.0365  
0.0366  
0.0367  
0.0367  
0.0368  
0.0369  
0.0369  
0.0370  
0.0371  
0.0371  
0.448  
0.457  
0.465  
0.475  
0.483  
0.490  
0.497  
0.503  
0.508  
0.512  
0.517  
0.526  
0.533  
0.536  
0.536  
0.537  
0.537  
0.538  
0.538  
0.539  
0.540  
0.540  
0.541  
0.543  
0.544  
0.545  
0.547  
0.549  
0.550  
0.552  
0.554  
0.556  
0.557  
0.559  
0.560  
0.562  
0.563  
0.564  
0.564  
0.565  
0.565  
0.565  
0.564  
--171.6  
--171.9  
--172.5  
--173.3  
--174.0  
--174.9  
--175.8  
--176.8  
--177.9  
--178.9  
176.5  
175.5  
174.5  
173.5  
172.6  
171.8  
170.9  
169.9  
169.1  
168.2  
167.3  
166.5  
165.6  
164.9  
164.1  
163.3  
162.6  
161.8  
161.1  
160.3  
159.6  
158.9  
158.2  
157.4  
156.7  
156.0  
155.2  
154.4  
153.6  
152.8  
152.0  
151.2  
150.3  
0.3  
350  
-- 0 . 1  
-- 0 . 4  
-- 0 . 6  
-- 0 . 8  
-- 1 . 0  
-- 1 . 2  
-- 1 . 4  
-- 1 . 6  
-- 1 . 7  
-- 1 . 8  
-- 1 . 9  
-- 2 . 0  
-- 2 . 2  
-- 2 . 3  
-- 2 . 5  
-- 2 . 7  
-- 2 . 8  
-- 3 . 0  
-- 3 . 2  
-- 3 . 4  
-- 3 . 6  
-- 3 . 8  
-- 4 . 0  
-- 4 . 2  
-- 4 . 4  
-- 4 . 5  
-- 4 . 8  
-- 5 . 0  
-- 5 . 2  
-- 5 . 5  
-- 5 . 7  
-- 6 . 0  
-- 6 . 3  
-- 6 . 6  
-- 6 . 9  
-- 7 . 2  
-- 7 . 6  
-- 7 . 9  
-- 8 . 3  
-- 8 . 7  
-- 9 . 1  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
1050  
1100  
1150  
1200  
1250  
1300  
1350  
1400  
1450  
1500  
1550  
1600  
1650  
1700  
1750  
1800  
1850  
1900  
1950  
2000  
2050  
2100  
2150  
2200  
2250  
2300  
2350  
97.3  
95.4  
93.5  
91.7  
89.9  
88.2  
86.5  
84.8  
83.2  
81.7  
80.1  
78.6  
77.1  
75.6  
74.2  
72.7  
71.3  
69.8  
68.4  
67.0  
65.5  
64.1  
62.7  
61.3  
59.8  
58.4  
(continued)  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
9
50 OHM TYPICAL CHARACTERISTICS  
Table 12. Common Emitter S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System) (continued)  
CC  
A
S
S
S
S
22  
11  
21  
12  
f
MHz  
|S  
|
11  
   
|S  
|
21  
   
|S  
|
12  
   
|S |  
22  
   
2400  
2450  
2500  
2550  
2600  
2650  
2700  
2750  
2800  
2850  
2900  
2950  
3000  
3050  
3100  
3150  
3200  
3250  
3300  
3350  
3400  
3450  
3500  
3550  
3600  
3650  
3700  
3750  
3800  
3850  
3900  
3950  
4000  
0.712  
0.715  
0.719  
0.722  
0.724  
0.728  
0.730  
0.733  
0.736  
0.738  
0.740  
0.742  
0.745  
0.747  
0.749  
0.751  
0.753  
0.756  
0.758  
0.760  
0.762  
0.764  
0.766  
0.768  
0.770  
0.772  
0.774  
0.775  
0.777  
0.778  
0.780  
0.781  
0.783  
146.9  
146.0  
145.0  
144.1  
143.1  
142.2  
141.2  
140.2  
139.2  
138.2  
137.2  
136.2  
135.2  
134.2  
133.1  
132.1  
131.1  
130.1  
129.1  
128.1  
127.1  
126.1  
125.1  
124.2  
123.2  
122.3  
121.3  
120.4  
119.5  
118.6  
117.6  
116.7  
115.8  
3.299  
3.240  
3.181  
3.124  
3.071  
3.017  
2.968  
2.920  
2.872  
2.828  
2.784  
2.743  
2.703  
2.664  
2.627  
2.590  
2.555  
2.521  
2.487  
2.455  
2.422  
2.392  
2.361  
2.331  
2.302  
2.273  
2.246  
2.218  
2.192  
2.167  
2.142  
2.118  
2.091  
57.0  
55.6  
54.1  
52.7  
51.3  
49.9  
48.5  
47.1  
45.8  
44.4  
43.0  
41.7  
40.3  
39.0  
37.6  
36.3  
35.0  
33.7  
32.4  
31.1  
29.8  
28.6  
27.3  
26.1  
24.9  
23.7  
22.6  
21.5  
20.4  
19.2  
18.1  
17.1  
16.0  
0.0372  
0.0373  
0.0373  
0.0374  
0.0374  
0.0375  
0.0376  
0.0377  
0.0378  
0.0380  
0.0381  
0.0382  
0.0384  
0.0385  
0.0386  
0.0388  
0.0389  
0.0390  
0.0391  
0.0393  
0.0394  
0.0395  
0.0396  
0.0397  
0.0398  
0.0399  
0.0400  
0.0401  
0.0403  
0.0404  
0.0405  
0.0406  
0.0407  
-- 9 . 5  
0.564  
0.563  
0.562  
0.562  
0.561  
0.560  
0.559  
0.559  
0.558  
0.557  
0.557  
0.557  
0.557  
0.557  
0.557  
0.557  
0.558  
0.558  
0.559  
0.560  
0.560  
0.561  
0.562  
0.563  
0.564  
0.565  
0.566  
0.567  
0.568  
0.569  
0.570  
0.571  
0.572  
149.5  
148.6  
147.7  
146.8  
145.9  
145.0  
144.0  
143.1  
142.1  
141.1  
140.1  
139.1  
138.1  
137.1  
136.1  
135.1  
134.1  
133.2  
132.2  
131.3  
130.5  
129.6  
128.9  
128.1  
127.4  
126.7  
126.1  
125.6  
125.1  
124.6  
124.2  
123.7  
123.5  
-- 9 . 9  
--10.3  
--10.8  
-- 11 . 2  
-- 11 . 6  
--12.0  
--12.4  
--12.9  
--13.4  
--13.8  
--14.4  
--14.9  
--15.4  
--15.9  
--16.4  
--17.0  
--17.5  
--18.0  
--18.5  
--19.0  
--19.5  
--20.0  
--20.5  
--21.0  
--21.4  
--21.8  
--22.2  
--22.6  
--23.0  
--23.4  
--23.9  
--24.2  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
10  
1.90  
3.00  
2X  
45  
4.35  
2X  
1.25  
3X  
0.70  
0.85  
2X  
1.50  
Figure 26. PCB Pad Layout for SOT--89A  
M3014N  
AWLYWZ  
Figure 27. Product Marking  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
11  
PACKAGE DIMENSIONS  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
12  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
13  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
14  
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS  
Refer to the following documents to aid your design process.  
Application Notes  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3100: General Purpose Amplifier Biasing  
Software  
.s2p File  
Development Tools  
Printed Circuit Boards  
Reference Designs  
2110--2170 MHz, 4 W, 28 V W--CDMA Smart Demo Reference Design (Devices MMG3014N, MW7IC2240N)  
To Download Resources Specific to a Given Part Number:  
1. Go to http://www.nxp.com/RF  
2. Search by part number  
3. Click part number link  
4. Choose the desired resource from the drop down menu  
FAILURE ANALYSIS  
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In  
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third  
party vendors with moderate success. For updates contact your local Freescale Sales Office.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
Apr. 2008  
Sept. 2008  
Initial Release of Data Sheet  
Updated Fig. 15, “S21, S11 and S22 versus Frequency,” to correct S11 and S22 curve label transposition  
error, p. 6  
Updated data in Table 12, “Common Emitter S-Parameters,” for better simulation response, pp. 9--10  
2
Jan. 2011  
Corrected temperature at which ThetaJC is measured from 25C to 81C and added “no RF applied” to  
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no  
RF signal applied, p. 1  
Removed I bias callout from applicable graphs as bias is not a controlled value, pp. 4--9  
CC  
Removed I bias callout from Table 12, Common Emitter S--Parameters heading as bias is not a  
CC  
controlled value, pp. 9--10  
Added .s2p file and Printed Circuit Boards availability to Software and Tools, p. 16  
Added Reference Design availability to Development Tools, p. 16  
3
Oct. 2011  
Table 1, Maximum Ratings, increased Input Power from 15 dBm to 25 dBm to reflect the true capability of  
the device, p. 1  
Changed ESD Human Body Model rating from Class 1C to Class 1B to reflect recent ESD test results of  
the device, p. 2  
Corrected part number for the C7 capacitor in Table 8, 50 Ohm Test Circuit Component Designations and  
Values, from C0603C189J5GAC to C1206C189D5GAC, p. 5.  
Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02  
(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an  
external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has  
slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer.  
4
5
Aug. 2014  
Mar. 2016  
Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test  
results of the device, p. 1  
Added Failure Analysis information, p. 15  
Overview paragraph updated to reflect actual matching of the device, p. 1  
Fig. 27, Product Marking: updated date code line to reflect improved traceability information, p. 11  
MMG3014NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
15  
Information in this document is provided solely to enable system and software  
implementers to use Freescale products. There are no express or implied copyright  
licenses granted hereunder to design or fabricate any integrated circuits based on the  
information in this document.  
How to Reach Us:  
Home Page:  
freescale.com  
Freescale reserves the right to make changes without further notice to any products  
herein. Freescale makes no warranty, representation, or guarantee regarding the  
suitability of its products for any particular purpose, nor does Freescale assume any  
liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation consequential or incidental  
damages. “Typical” parameters that may be provided in Freescale data sheets and/or  
specifications can and do vary in different applications, and actual performance may  
vary over time. All operating parameters, including “typicals,” must be validated for  
each customer application by customer’s technical experts. Freescale does not convey  
any license under its patent rights nor the rights of others. Freescale sells products  
pursuant to standard terms and conditions of sale, which can be found at the following  
address: freescale.com/SalesTermsandConditions.  
Web Support:  
freescale.com/support  
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,  
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their  
respective owners.  
E 2008, 2011, 2014, 2016 Freescale Semiconductor, Inc.  
Document Number: MMG3014NT1  
Rev. 5, 3/2016  

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