CBT6820DG [NXP]

IC CBT/FST/QS/5C/B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48, PLASTIC, SOT-362, TSSOP-48, Bus Driver/Transceiver;
CBT6820DG
型号: CBT6820DG
厂家: NXP    NXP
描述:

IC CBT/FST/QS/5C/B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48, PLASTIC, SOT-362, TSSOP-48, Bus Driver/Transceiver

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INTEGRATED CIRCUITS  
CBT6820  
20-bit bus switch with precharged outputs  
and Schottky undershoot protection for  
live insertion  
Product specification  
1999 Apr 05  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
20-bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
FEATURES  
PIN CONFIGURATION  
TTL compatible inputs and outputs  
5switch connection between two port A and port B  
Thin shrink small outline (TSSOP)  
1OE  
2OE  
1B1  
BIASV  
1A1  
1
2
3
48  
47  
Undershoot protection included to prevent shoot through level  
changes  
1A2  
46  
Bias voltage pre-charges the outputs to minimize signal distortion  
1A3  
4
5
45  
44  
1B2  
1B3  
during live insertion  
1A4  
6
1A5  
43  
42  
41  
1B4  
1B5  
GND  
DESCRIPTION  
7
1A6  
The CBT6820 provides twenty bits of high-speed TTL-compatible  
bus switching. The low on-state resistance of the switch allows  
bi-directional connections to be made while adding near-zero  
propagation delay. The device also precharges the B port to a  
user-selectable bias voltage (BIASV) to minimize live-insertion  
noise.  
GND  
8
1A7  
1A8  
9
40  
39  
1B6  
1B7  
1B8  
1B9  
1B10  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
1A9  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
1A10  
The device is organized as two 10-bit switch with individual enable  
(OE) input. When OE is low, the switch is on and port A is  
connected to port B. When OE is high, the switch between port A  
and port B is open and the B port is precharged to BIASV through  
the equivalent of a 10-kresistor.  
2A1  
2A2  
2B1  
V
2B2  
2B3  
GND  
CC  
2A3  
Special clamp circuitry and Schottky diode clamps to ground are  
used to prevent an under voltage on the A side (Vin < GND) from  
causing the B side precharge voltage to drop below the ‘‘1” state.  
GND  
2A4  
2A5  
2B4  
2B5  
2B6  
2B7  
2A6  
2A7  
2A8  
2A9  
2B8  
22  
27  
26  
25  
2B9  
23  
24  
2B10  
2A10  
SA00520  
QUICK REFERENCE DATA  
CONDITIONS  
= 25°C; GND = 0V  
SYMBOL  
PARAMETER  
TYPICAL  
UNIT  
T
amb  
Propagation delay  
An to Bn or Bn to An  
Input capacitance  
t
/t  
C = 50 pF, V = 5 V  
0.25  
ns  
PLH PHL  
L
CC  
C
4.5  
9.5  
pF  
pF  
IN  
C
Input/output capacitance  
Outputs disabled; V = 0 V or V  
O CC  
I/O  
ORDERING INFORMATION  
PACKAGES  
TEMPERATURE RANGE OUTSIDE NORTH AMERICA  
–40°C to +85°C CBT6820 DGG  
NORTH AMERICA  
CBT6820 DGG  
DWG NUMBER  
48-Pin Plastic TSSOP Type II  
SOT362–1  
2
1999 Apr 05  
853–2152 21177  
Philips Semiconductors  
Product specification  
20-bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
PIN DESCRIPTION  
LOGIC SYMBOL  
PIN NUMBER  
SYMBOL  
NAME AND FUNCTION  
1
BIASV  
Bias voltage  
1
2, 3, 4, 5, 6,  
7, 9, 10, 11,12  
1A1–1A10  
GND  
Port 1A1 to Port 1A10  
Ground (V)  
BIASV  
8, 17, 32, 41  
13, 14, 16, 18, 19,  
20, 21, 22, 23, 24  
2, 13  
46, 35  
xB1  
2A1–2A10  
Port 2A1 to Port 2A10  
Positive supply voltage  
Port 2B1 to Port 2B10  
xA1  
15  
V
CC  
35, 34, 33, 31, 30,  
29, 28, 27, 26, 25  
2B1–2B10  
46, 45, 44, 43, 42,  
40, 39, 38, 37, 36  
1B1–1B10  
1OE, 2OE  
Port 1B1 to Port 1B10  
Switch enables  
12, 24  
36, 25  
xB10  
48, 47  
xA10  
xOE  
FUNCTION TABLE  
OE  
L
STATE  
48, 47  
A Port = B Port  
A Port = Z  
H
where x = 1 – 2  
H
B Port = BIASV  
H
L
Z
=
=
=
High voltage level  
Low voltage level  
High impedance “offstate  
SA00506  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
RATING  
–0.5 to +7.0  
–50  
UNIT  
V
V
CC  
I
IK  
DC clamp diode current  
V < 0  
I
mA  
V
1
V
I
DC input voltage  
–0.5 to +7.0  
±128  
I
DC continuous channel current  
DC bias voltage  
V
O
= 0 to V  
CC  
mA  
V
SW  
V
BIASV  
–0.5 to +7.0  
–65 to 150  
T
stg  
Storage temperature range  
°C  
Plastic thin shrink small outline package  
(TSSOP)  
øJA  
104  
°C/W  
NOTE:  
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
RECOMMENDED OPERATING CONDITIONS  
LIMITS  
SYMBOL  
PARAMETER  
UNIT  
Min  
4.0  
1.3  
2.0  
Max  
V
CC  
DC supply voltage  
DC supply voltage  
5.5  
V
V
BIASV  
V
CC  
V
IH  
High-level input voltage (control pin)  
Low-level Input voltage (control pin)  
Operating free-air temperature range  
V
V
IL  
0.8  
V
T
amb  
–40  
+85  
°C  
3
1999 Apr 05  
Philips Semiconductors  
Product specification  
20-bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
DC ELECTRICAL CHARACTERISTICS  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
T
amb  
= –40°C to +85°C  
UNIT  
1
Min  
Typ  
Max  
V
IK  
Input clamp voltage  
V
CC  
= 4.5V; I = –18mA  
–1.2  
V
I
I
Input leakage current (control pin)  
Output bias current (B pins)  
V
V
= 5.5V; V = GND or 5.5V  
±5  
µA  
I
CC  
I
I
O
= 4.5V; BiasV = 2.4V; V = 0, OE = V  
CC  
–0.25  
mA  
CC  
O
I
Quiescent supply current  
V
= 5.5V; I = 0, V = V or GND  
2.5  
2.5  
mA  
mA  
CC  
CC  
O
I
CC  
V
CC  
= 5.5V, one input at 3.4V,  
2
I  
Control pins  
CC  
other inputs at V or GND  
CC  
C
Input capacitance per OE pin  
V = 3V or 0  
4.5  
9.5  
5
pF  
pF  
I
I
C
Capacitance per port (OFF-state)  
V
V
V
V
V
V
= 3V or 0; switch off  
O(OFF)  
O
= 4.5V; V = 0V; I = 64mA  
7
7
CC  
CC  
CC  
I
I
3
r
On-resistance  
= 4.5V; V = 0V; I = 30mA  
5
on  
I
I
= 4.5V; V = 2.4V; I = –15mA  
10  
3.6  
15  
3.9  
I
I
V
P
Pass voltage  
= V = 4.5V; I = –100µA  
3.4  
V
IN  
CC  
out  
Undershoot static current  
= 5.0V, V  
= V  
CC  
CC  
Bias  
I
–10  
mA  
USP  
4
protection  
I = –5µA, V 3.0V  
B B  
NOTES:  
1. All typical values are at VCC = 5V, TA = 25 C  
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V or GND  
CC  
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On–state resistance is  
determined by the lowest voltage of the two (A or B) terminals.  
4. Force I , measure V 3V  
USP B  
4
1999 Apr 05  
Philips Semiconductors  
Product specification  
20-bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
AC CHARACTERISTICS FOR V = 5.0V ±0.5V RANGE  
CC  
GND = 0V; t = t 2.5ns; C = 50pF.  
r
f
L
LIMITS  
SYMBOL  
PARAMETER  
WAVEFORM  
T
amb  
= –40 to +85°C  
UNIT  
1
MIN  
TYP  
MAX  
0.25  
2
t
Propagation delay; An to Bn; Bn to An  
1
2
ns  
ns  
pd  
3-State output enable time  
OE to An; OE to Bn; BIASV = GND  
t
1.3  
1.4  
1.7  
2.8  
3.1  
2.9  
2.8  
4.4  
5.3  
4.6  
4.5  
6.6  
PZH  
3-State output enable time  
OE to An; OE to Bn; BIASV = 3.0V  
t
2
2
2
ns  
ns  
ns  
PZL  
PHZ  
3-State output enable time  
OE to An; OE to Bn; BIASV = GND  
t
3-State output enable time  
OE to An; OE to Bn; BIASV = 3.0V  
t
PLZ  
NOTE:  
1. All typical values are measured at T  
= 25°C and V = 5.0V  
CC  
amb  
2. Warranted but not production tested. The propagation delay is based on the RC time constant of the typical ON-state resistance of the  
switch and a load capacitance of 50pF, when driven by an ideal voltage source (zero output impedance)  
AC WAVEFORMS  
TEST CIRCUIT AND WAVEFORMS  
V
= 1.5V, V = GND to 3.0V  
M
IN  
7 V  
3 V  
0 V  
500  
S1  
From Output  
Under Test  
Open  
GND  
1.5V  
1.5V  
INPUT  
500 Ω  
C
= 50 pF  
L
t
t
PHL  
PLH  
Load Circuit  
V
OH  
1.5V  
1.5V  
TEST  
S1  
OUTPUT  
t
open  
7 V  
pd  
V
OL  
t
/t  
PLZ PZL  
SA00028  
t
/t  
open  
PHZ PZH  
Waveform 1. Waveforms Showing the Input (An) to Output (Bn)  
Propagation Delays  
DEFINITIONS  
C
=
Load capacitance includes jig and probe capacitance;  
see AC CHARACTERISTICS for value.  
L
3V  
SA00012  
Output Control  
NOTES:  
1. All input pulses are supplied by generators having the following  
characteristics: PRR 10MHz, Z = 50 , t 2.5 ns, t 2.5 ns.  
(Low-level  
enabling  
1.5 V  
1.5 V  
O
r
f
0V  
t
t
2. The outputs are measured one at a time with one transition per  
PLZ  
PZL  
3.5V  
measurement.  
Output  
Waveform 1  
S1 at 7 V  
1.5 V  
1.5 V  
V
V
+ 0.3V  
– 0.3V  
OL  
(see Note)  
V
V
OL  
t
t
PHZ  
PZH  
OH  
Output  
Waveform 2  
S1 at Open  
(see Note)  
OH  
0V  
Note:  
Waveform 1 is for an output with internal conditions such that  
the output is low except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that  
the output is high except when disabled by the output control.  
SA00029  
Waveform 2. Waveforms Showing the 3-State Output Enable  
and Disable Times  
5
1999 Apr 05  
Philips Semiconductors  
Product specification  
20–bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
TSSOP48: plastic thin shrink small outline package; 48 leads; body width 6.1mm  
SOT362-1  
6
1999 Apr 05  
Philips Semiconductors  
Product specification  
20–bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
NOTES  
7
1999 Apr 05  
Philips Semiconductors  
Product specification  
20–bit bus switch with precharged outputs and  
Schottky undershoot protection for live insertion  
CBT6820  
DEFINITIONS  
Data Sheet Identification  
Product Status  
Definition  
This data sheet contains the design target or goal specifications for product development. Specifications  
may change in any manner without notice.  
Objective Specification  
Formative or in Design  
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to make changes at any time without notice in order to improve design  
and supply the best possible product.  
Preliminary Specification  
Product Specification  
Preproduction Product  
Full Production  
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes  
at any time without notice, in order to improve design and supply the best possible product.  
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,  
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,  
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes  
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting  
or modification.  
LIFE SUPPORT APPLICATIONS  
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,  
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected  
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips  
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully  
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Philips Semiconductors and Philips Electronics North America Corporation  
register eligible circuits under the Semiconductor Chip Protection Act.  
Copyright Philips Electronics North America Corporation 1998  
All rights reserved. Printed in U.S.A.  

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