CRCW06030000FKTA [NXP]
Gallium Arsenide CATV Integrated Amplifier Module;
| 型号： | CRCW06030000FKTA |
| 厂家： | 
NXP |
| 描述： | Gallium Arsenide CATV Integrated Amplifier Module 有线电视 |
| 文件： | 总9页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG1001NT1
Rev. 8, 3/2007
Freescale Semiconductor
Technical Data
Gallium Arsenide
CATV Integrated Amplifier Module
Features
MMG1001NT1
• Specified for 79-, 112- and 132-Channel Loading
• Excellent Distortion Performance
• Built-in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Applications
870 MHz
19 dB GAIN
132-CHANNEL
CATV INTEGRATED AMPLIFIER
MODULE
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
• Driver Amplifier in Linear General Purpose Applications
16
Description
1
• 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV
Integrated Forward Amplifier Module
CASE 978-03
PFP-16
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
dBmV
Vdc
RF Voltage Input (Single Tone)
V
in
+65
DC Supply Voltage
24 V Application
12 V Application
V
CC
+26
+14
Operating Case Temperature Range
Storage Temperature Range
T
-20 to +100
-40 to +100
°C
°C
C
T
stg
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
6.6
°C/W
Pin 3
Pin 15
Pin 13
Pin 11
Q
3
NC
NC
1
2
3
4
NC
16
Q
V
1
15
14
13
12
D3
NC
V
Pin 4
Pin 5
Pin 6
V
G1
R
R
G3
V
S1
GC
R
R
S1
S2
V
5
6
7
8
NC
V
C
V
V
11
10
9
S2
D4
NC
NC
G2
NC
G4
Q
2
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Q
4
Pin 7
Figure 1. Functional Diagram
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (minimum)
M1 (minimum)
C5 (minimum)
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics for 24 V Application (V = 24 Vdc, T = +30°C, 75 Ω system unless otherwise noted)
CC
C
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
dB
Frequency Range
Power Gain
BW
40
—
870
50 MHz
870 MHz
G
—
—
18
19
—
—
p
Slope
40 - 870 MHz
S
—
—
0.6
0.5
—
—
dB
dB
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
Input Return Loss (Z = 75 Ohms)
G
F
IRL
o
f = 40-160 MHz
f = 161-450 MHz
f = 451-870 MHz
—
—
21
19
22
—
—
—
Output Return Loss (Z = 75 Ohms)
ORL
dB
o
f = 40-400 MHz
f = 401-870 MHz
—
—
22
17
—
—
Composite Second Order
dBc
(V = +44 dBmV/ch., Worst Case)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
CSO
CSO
CSO
—
—
—
-65
-65
-71
-58
-59
-62
out
132
112
79
(V = +46 dBmV/ch., Worst Case)
out
(V = +48 dBmV/ch., Worst Case)
out
Cross Modulation Distortion @ Ch 2
dBc
dBc
dB
(V = +44 dBmV/ch., FM = 55 MHz) 132-Channel FLAT
XMD
XMD
XMD
—
—
—
-64
-63
-62
-52
-52
-52
out
132
112
79
(V = +46 dBmV/ch., FM = 55 MHz) 112-Channel FLAT
out
(V = +48 dBmV/ch., FM = 55 MHz) 79-Channel FLAT
out
Composite Triple Beat
(V = +44 dBmV/ch., Worst Case)
132-Channel FLAT
112-Channel FLAT
79-Channel FLAT
CTB
CTB
CTB
—
—
—
-63
-64
-65
-56
-56
-58
out
132
112
79
(V = +46 dBmV/ch., Worst Case)
out
(V = +48 dBmV/ch., Worst Case)
out
Noise Figure
50 MHz
870 MHz
NF
—
—
4
4
5.0
5.0
DC Current (V = 24 V, T = -20° to +100°C)
I
DC
230
250
265
mA
DC
C
(continued)
MMG1001NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics for 12 V Application (V = 12 Vdc, T = +30°C, 75 Ω system unless otherwise noted)
CC
C
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
dB
Frequency Range
Power Gain
BW
40
—
870
50 MHz
870 MHz
G
—
—
18
19
—
—
p
Slope
40 - 870 MHz
S
—
—
0.6
0.5
—
—
dB
dB
dB
Gain Flatness (40 - 870 MHz, Peak to Valley)
Input Return Loss (Z = 75 Ohms)
G
F
IRL
o
f = 40-160 MHz
f = 161-450 MHz
f = 451-870 MHz
—
—
21
19
19
—
—
—
Output Return Loss (Z = 75 Ohms)
ORL
dB
o
f = 40-400 MHz
f = 401-750 MHz
f = 751-870 MHz
—
—
—
19
17
15
—
—
—
Composite Second Order
dBc
dBc
dBc
(V = +42 dBmV/ch., Worst Case)
112-Channel FLAT
79-Channel FLAT
CSO
CSO
—
—
-65
-71
—
—
out
112
79
(V = +42 dBmV/ch., Worst Case)
out
Cross Modulation Distortion @ Ch 2
(V = +42 dBmV/ch., FM = 55 MHz) 112-Channel FLAT
XMD
XMD
—
—
-63
-62
—
—
out
112
79
(V = +42 dBmV/ch., FM = 55 MHz) 79-Channel FLAT
out
Composite Triple Beat
(V = +42 dBmV/ch., Worst Case)
(V = +42 dBmV/ch., Worst Case)
out
112-Channel FLAT
79-Channel FLAT
CTB
CTB
—
—
-64
-65
—
—
out
112
79
Noise Figure
50 MHz
870 MHz
NF
—
—
4
4
5.0
5.0
dB
DC Current (V = 12 V, T = -20° to +100°C)
I
DC
190
210
225
mA
DC
C
MMG1001NT1
RF Device Data
Freescale Semiconductor
3
C10
C7
R13
L1
R9
Pin 15
Pin 13
Pin 11
Pin 3
Pin 4
C5
C6
R11
T2
RF
OUTPUT
C3
C4
R18
R15
R17
D2
C9
D3
Pin 5
T1
RF
INPUT
C12
Pin 6
Pin 7
R16
L2
C11
V
CC
R12
C1
R10
C8
R14
R1
R19
R2
R3
R7
R6
Q2
D1
Q1
R4
C2
Figure 3. MMG1001NT1 50-870 MHz Test Circuit Schematic
R8
R5
Table 6. MMG1001NT1 50-870 MHz Test Circuit Component Designations and Values
Designation
24 V Application
Description
12 V Application
Description
Manufactur-
er
Part Number
Part Number
C1, C7, C8,
C11
220 pF Chip Capacitors
C0603C221J5RAC
220 pF Chip Capacitors
C0603C221J5RAC
Kemet
C2, C3, C4,
C9, C10
0.01 mF Chip Capacitors
C0603C103J5RAC
0.01 mF Chip Capacitors
C0603C103J5RAC
Kemet
C5, C6
C12
D1
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
5.1 V Zener Diode
06035J1R8BS
06035J5R6BS
MM3Z5V1T1G
MM3Z27VT1G
1.8 pF Chip Capacitors
5.6 pF Chip Capacitor
5.1 V Zener Diode
06035J1R8BS
06035J5R6BS
MM3Z5V1T1G
MM3Z27VT1G
1.5SMC27AT3G
HK160822NJ-T
MBT3904DW1T1G
AVX
AVX
ON Semi
ON Semi
ON Semi
Taiyo Yuden
ON Semi
D2
27 V Zener Diode
27 V Zener Diode
D3
Transient Voltage Suppressor 1.5SMC27AT3G
Transient Voltage Suppressor
22 nH Chip Inductors
Dual Transistors Package
L1, L2
Q1, Q2
R1
22 nH Chip Inductors
HK160822NJ-T
Dual Transistors Package
2.2 kW, 1/4 W Chip Resistor
560 W, 1/10 W Chip Resistor
82 W, 1/10 W Chip Resistor
820 W, 1/10 W Chip Resistor
820 W, 1/10 W Chip Resistor
120 W, 1/10 W Chip Resistor
MBT3904DW1T1G
CRCW12062201FKTA 820 W, 1/4 W Chip Resistor
CRCW06035600FKTA 560 W, 1/10 W Chip Resistor
CRCW06030820FKTA 40 W, 1/10 W Chip Resistor
CRCW06038200FKTA 150 W, 1/10 W Chip Resistor
CRCW06038200FKTA 100 W, 1/10 W Chip Resistor
CRCW06031200FKTA 120 W, 1/10 W Chip Resistor
CRCW12068200FKTA Vishay
CRCW06035600FKTA Vishay
CRCW06030400FKTA Vishay
CRCW06031500FKTA Vishay
CRCW06031000FKTA Vishay
CRCW06031200FKTA Vishay
R2
R3
R4
R5
R6
R7
1.5 kW, 1/10 W Chip Resistor CRCW06031501FKTA 1.5 kW, 1/10 W Chip Resistor CRCW06031501FKTA Vishay
12 W, 1 W Chip Resistor
CRCW25120120FKTA 4.8 W, 1 W Chip Resistor CRCW251204R8FKTA Vishay
R8
R9, R10, R15 470 W, 1/10 W Chip Resistors CRCW06034700FKTA 470 W, 1/10 W Chip Resistors CRCW06034700FKTA Vishay
R11, R12
R13, R14
R16
18 W, 1/10 W Chip Resistors
910 W, 1/10 W Chip Resistors CRCW06039100FKTA 910 W, 1/10 W Chip Resistors CRCW06039100FKTA Vishay
2 kW, 1/10 W Chip Resistor
CRCW06032001FKTA 2.7 kW, 1/10 W Chip Resistor CRCW06032701FKTA Vishay
6.2 kW, 1/10 W Chip Resistor CRCW06036201FKTA 6.2 kW, 1/10 W Chip Resistor CRCW06036201FKTA Vishay
CRCW06030180FKTA 18 W, 1/10 W Chip Resistors
CRCW06030180FKTA Vishay
R17
R18
15 W, 1/10 W Chip Resistor
0 W, 1/10 W Chip Resistor
Input Transformer
CRCW06030150FKTA 15 W, 1/10 W Chip Resistor
CRCW06030000FKTA 0 W, 1/10 W Chip Resistor
CRCW06030150FKTA Vishay
CRCW06030000FKTA Vishay
R19
T1
None
None
None
Input Transformer
Output Transformer
None
None
None
None
None
None
T2
Output Transformer
PCB
FR4, 62 mil, ε = 4.81
FR4, 62 mil, ε = 4.81
r
r
MMG1001NT1
RF Device Data
Freescale Semiconductor
4
MMG1001R2
Rev 0
R16
R5
R19
R7
C7
R13
R9
L1
R15
L2
Q1
Q2
R11
C3
C5
R18
C9
T2
R6
T1
C6
R8
C12
C4
R12
D2
C2
C1
R14
C11
R10
C8
R17
C10
R3
R2
R1
R4
D1
D3
Note: 24 V Application, V = 24 V
CC
12 V Application, V = 12 V
GND
Not
Active
V
CC
CC
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the
Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MMG1001NT1 50-870 MHz Test Circuit Component Layout
MMG1001NT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS FOR 24 V APPLICATION
−60
48 dBmV
46 dBmV
−65
50 dBmV
44 dBmV
−70
42 dBmV
79−Channel Loading, Flat
−75
0
0
0
200
400
600
600
600
f, FREQUENCY (MHz)
Figure 5. Composite Triple Beat versus
Frequency
−65
−70
48 dBmV
50 dBmV
46 dBmV
−75
−80
−85
42 dBmV
44 dBmV
79−Channel Loading, Flat
200
400
f, FREQUENCY (MHz)
Figure 6. Composite Second Order versus
Frequency
−55
−60
48 dBmV
50 dBmV
46 dBmV
44 dBmV
42 dBmV
−65
−70
−75
79−Channel Loading, Flat
200
400
f, FREQUENCY (MHz)
Figure 7. Cross Modulation Distortion versus
Frequency
MMG1001NT1
RF Device Data
Freescale Semiconductor
6
PACKAGE DIMENSIONS
h X 45
A
D
_
E2
1
16
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D1
8
9
E1
B
BOTTOM VIEW
b1
8X E
M
S
bbb
C
B
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
Y
MILLIMETERS
c
c1
DIM MIN
2.000
A1 0.025
A2 1.950
6.950
D1 4.372
8.850
E1 6.950
E2 4.372
MAX
2.300
0.100
2.100
7.100
5.180
9.150
7.100
5.180
0.720
A2
A
A
b
DATUM
PLANE
H
SEATING
PLANE
M
S
C A
aaa
D
C
E
SECT W-W
L
L1
b
0.466
0.250 BSC
0.300
b1 0.300
0.432
0.375
0.279
0.230
ccc C
q
W
W
GAUGE
PLANE
c
c1
e
0.180
0.180
0.800 BSC
−−− 0.600
L
h
A1
q
0
7
_
_
aaa
bbb
ccc
0.200
0.200
0.100
1.000
0.039
DETAIL Y
CASE 978-03
ISSUE C
PFP-16
MMG1001NT1
RF Device Data
Freescale Semiconductor
7
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
7
8
Oct. 2006
Mar. 2007
•
Replaced “N suffix indicates 260°C reflow capable” bullet with RoHS Compliant, p. 1
•
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers
and added Manufacturer column, p. 4
MMG1001NT1
RF Device Data
Freescale Semiconductor
8
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Document Number: MMG1001NT1
Rev. 8, 3/2007
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