CRCW080512K0JNEA [NXP]
RF LDMOS Wideband Integrated Power Amplifier;
| 型号： | CRCW080512K0JNEA |
| 厂家： | 
NXP |
| 描述： | RF LDMOS Wideband Integrated Power Amplifier PC 电阻器 |
| 文件： | 总13页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW7IC008N
Rev. 3, 12/2013
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC008N wideband integrated circuit is designed with on--chip
matching that makes it usable from 20 to 1000 MHz. This multi--stage
structure is rated for 24 to 32 volt operation and covers most narrow
bandwidth communication application formats.
MW7IC008NT1
Driver Applications
100--1000 MHz, 8 W PEAK, 28 V
RF LDMOS WIDEBAND
Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA
INTEGRATED POWER AMPLIFIER
G
PAE
(%)
ps
Frequency
(dB)
23.5
22.5
23.5
100 MHz @ 11 W CW
400 MHz @ 9 W CW
900 MHz @ 6.5 W CW
55
41
34
Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW
(3 dB Input Overdrive from Rated Pout
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 8 Watts CW
Pout @ 900 MHz
)
PQFN 8 8
PLASTIC
Typical Pout @ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz,
9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz
Features
Broadband, Single Matching Network from 20 to 1000 MHz
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
V
V
TTS1
TTS2
(1)
Quiescent Current
24 23 22 21 20 19
Temperature Compensation
V
18
17
16
15
14
13
1
2
3
4
5
6
NC
NC
NC
NC
NC
RF
GLS1
NC
NC
V
V
GS2
GS1
NC
RF
RF
/V
inS1
outS2 DS2
RF
V
inS1
GS1
/V
outS2 DS2
7
8 9 10 11 12
RF
/V
RF
inS2
outS1 DS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
Freescale Semiconductor, Inc., 2009, 2011--2013. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +12
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Operating Junction Temperature
T
stg
--65 to +150
150
T
J
C
(3)
100 MHz CW Operation @ T = 25C
CW
11
W
A
(3)
(3)
400 MHz CW Operation @ T = 25C
6
5
W
A
900 MHz CW Operation @ T = 25C
W
A
Input Power
100 MHz
400 MHz
900 MHz
P
27
23
38
dBm
in
Table 2. Thermal Characteristics
(1,2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
C/W
JC
(CW Signal @ 100 MHz)
(Case Temperature 82C, P = 11 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25 mA
= 75 mA
5.3
4.9
out
DQ1
DQ2
(CW Signal @ 400 MHz)
(Case Temperature 87C, P = 9 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25 mA
= 75 mA
4.4
2.7
out
DQ1
DQ2
(CW Signal @ 900 MHz)
(Case Temperature 86C, P = 6.5 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25 mA
= 75 mA
3.5
3.2
out
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. CW Ratings at the individual frequencies are limited by a 100--year MTTF requirement. See MTTF calculator (referenced in Note 1).
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
10
GS
DS
Stage 1 — On Characteristics
Gate Threshold Voltage
V
V
1.3
2
2
2.8
3.5
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 5.3 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 25 mAdc, Measured in Functional Test)
2.8
GS(Q)
DD
D
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
I
DS
GS
Gate--Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
I
10
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.3
2
2
2.8
3.5
1
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DQ1
(V = 10 Vdc, I = 23 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 75 mAdc, Measured in Functional Test)
2.7
0.3
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.1
GS
D
(1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 25 mA, I
= 75 mA, P = 6.5 W CW, f = 900 MHz
DQ2 out
DD
Power Gain
G
21.5
23.5
34
31.5
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
30
—
-- 1 5
-- 11
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 25 mA, I
= 75 mA
DQ2
DD
DQ1
G
PAE
(%)
IRL
ps
Frequency
100 MHz @ 11 W CW
(dB)
23.5
22.5
23.5
(dB)
-- 2 0
-- 1 7
-- 1 5
55
41
34
400 MHz @ 9 W CW
900 MHz @ 6.5 W CW
1. Part internally matched both on input and output.
(continued)
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min Typ
= 25 mA, I = 75 mA, 100--1000 MHz Bandwidth
DQ2
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
Characteristic
Symbol
IMD
Min
Typ
Max
Unit
IMD Symmetry @ 6.8 W PEP, P where IMD Third Order
MHz
out
sym
(1)
—
0.1
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(1)
VBW Resonance Point
VBW
—
0.1
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 500--1000 MHz Bandwidth @ P = 6 W Avg.
G
—
—
1.35
—
—
dB
out
F
Gain Variation over Temperature
G
0.024
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.005
—
dB/C
(--30C to +85C)
Typical CW Performances — 100 MHz (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
CW, f = 100 MHz
= 25 mA, I
= 75 mA, P = 11 W
out
DD
DQ1
DQ1
DQ1
DQ2
DQ2
DQ2
Power Gain
G
—
—
—
—
23.5
55
—
—
—
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
-- 2 0
dB
W
P
@ 1 dB Compression Point, CW
P1dB
11
out
Typical CW Performances — 400 MHz (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 25 mA, I
= 75 mA, P = 9 W
out
DD
CW, f = 400 MHz
Power Gain
G
—
—
—
—
22.5
—
—
—
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
41
-- 1 7
dB
W
P
@ 1 dB Compression Point, CW
P1dB
9
out
Typical CW Performances — 900 MHz (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 25 mA, I
= 75 mA, P = 6.5 W
out
DD
CW, f = 900 MHz
Power Gain
G
—
—
—
—
23.5
34
—
—
—
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
-- 1 5
6.5
dB
W
P
@ 1 dB Compression Point, CW
P1dB
out
1. Not recommended for wide instantaneous bandwidth modulated signals.
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
4
V
V
GG2
DD1
GND
C17
V
DD2
R12
R11
R10
R9
L7
L6
C16
C13
C3
C15
R8
C12
C14
L5
R1
C10
C11
L2
C9
C8
C2
C1
L1
L4
C4
L3
C7
C5
R4
R5
R2
R3
C6
R6
R7
MW7IC008N
Rev. 1a
V
GG1
GND
Figure 3. MW7IC008NT1 Test Circuit Component Layout
Table 6. MW7IC008NT1 Test Circuit Component Designations and Values
Part
Description
0.01 F Chip Capacitor
Part Number
GRM3195C1E103JA01
GRM219F51H104ZA01
GRM55DR61H106KA88L
C0805C103K5RAC
Manufacturer
C1
Murata
Murata
Murata
Kemet
C2, C15
C3, C16
0.1 F Chip Capacitors
10 F Chip Capacitors
0.01 F Chip Capacitors
C4, C5, C7, C8, C10,
C11, C12, C14
C6, C17
1 F, 35 V Tantalum Capacitors
2.2 pF Chip Capacitor
TAJA105K035R
AVX
C9
ATC600S2R2CT250XT
ATC600S3R3BT250XT
LL2012--FHLR15J
ATC
C13
3.3 pF Chip Capacitor
ATC
L1, L7
150 nH Ceramic Chip Inductors
180 nH Ceramic Chip Inductors
1.6 nH Inductor
Toko
L2, L6
LL2012--FHLR18J
Toko
L3
0603HC--1N6XJLW
0603HP--5N1XJLW
RR1220P--511--B--T5
CRCW080591R0FKEA
CRCW08050000Z0EA
CRCW080510K0JNEA
CRCW080512K0JNEA
CRCW080543R0FKEA
CRCW080515K0JNEA
RO4350B
Coilcraft
Coilcraft
Susumu
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Rogers
L4, L5
5.1 nH Inductors
R1, R12
510 , 1/10 W Chip Resistors
91 , 1/8 W Chip Resistors
0 , 2.5 A Chip Resistors
10 K, 1/8 W Chip Resistor
12 K, 1/8 W Chip Resistors
43 , 1/8 W Chip Resistor
15 K, 1/8 W Chip Resistor
R2, R3, R4
R5*, R9*
R6
R7, R11
R8
R10
PCB
0.020, = 3.66
r
*Add for temperature compensation
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
29
28
27
26
25
24
23
22
21
20
19
70
V
= 28 Vdc, I
in
= 25 mA, I
= 75 mA
DD
DQ1
DQ2
60
Fixed P = 14.6 dBm CW
50
PAE
40
30
G
ps
-- 5
14
12
10
8
-- 1 0
-- 1 5
IRL
-- 2 0
-- 2 5
-- 3 0
6
P
out
4
100
200 300 400
600
700
800 900 1000
500
f, FREQUENCY (MHz)
Figure 4. Broadband Performance @ Pin = 14.6 dBm CW
-- 1 0
IM3--L
IM5--U
IM5--L
IM3--U
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
V
= 28 Vdc, P = 6.8 W (PEP)
out
DD
I
= 25 mA, I
= 75 mA
DQ1
DQ2
IM7--L
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 900 MHz
IM7--U
1
10
100
200
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
90
80
70
60
50
40
30
26
25
24
23
100 MHz
900 MHz
G
ps
400 MHz
22
21
20
19
18
V
I
I
= 28 Vdc
= 25 mA
= 75 mA
DD
DQ1
DQ2
100 MHz
400 MHz
PAE
20
10
900 MHz
1
10
, OUTPUT POWER (WATTS) CW
20
P
out
Figure 6. Power Gain and Power Added
Efficiency versus Output Power
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
30
0
20 MHz
-- 6
Gain
25
20
15
-- 1 2
-- 1 8
IRL
-- 2 4
--30
-- 3 6
10
V
P
I
= 28 Vdc
= --10 dBm
= 25 mA
DD
in
5
0
DQ1
DQ2
I
= 75 mA
0
200
400
600
800
1000
1200 1400 1600
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
7
V
= 28 Vdc, I
= 25 mA, I
= 75 mA
DD
DQ1
DQ2
P
= 11 W @ 100 MHz, 9 W @ 400 MHz, 6.5 W @ 900 MHz
out
f
Z
in
Z
load
MHz
100
49.78 + j1.07
48.96 + j1.44
48.00 + j1.54
46.67 + j1.36
45.30 + j0.91
43.93 + j0.11
42.53 -- j0.86
41.38 -- j2.16
40.30 -- j3.71
39.38 -- j5.44
38.43 -- j7.11
37.94 -- j8.71
37.49 -- j10.52
37.31 -- j12.42
37.00 -- j14.03
36.74 -- j15.64
36.57 -- j17.09
36.37 -- j18.59
36.12 -- j20.06
35.58 -- j21.43
35.00 -- j22.79
34.53 -- j24.39
33.53 -- j25.97
32.67 -- j27.84
31.61 -- j29.89
30.61 -- j32.34
29.55 -- j34.81
28.23 -- j37.61
27.34 -- j40.59
47.87 -- j9.85
49.12 -- j5.44
49.09 -- j2.66
48.63 -- j0.79
47.73 + j0.49
46.60 + j1.22
45.63 + j1.43
44.97 + j1.13
45.04 + j0.70
45.23 + j0.77
44.80 + j1.29
44.32 + j1.48
43.57 + j1.51
43.19 + j1.32
42.61 + j0.77
42.25 + j0.39
41.90 + j0.03
41.67 -- j0.41
41.77 -- j1.10
41.82 -- j1.60
41.90 -- j2.01
42.26 -- j2.43
42.51 -- j2.80
42.74 -- j2.99
43.10 -- j3.11
43.52 -- j3.19
43.86 -- j3.13
44.03 -- j3.03
44.33 -- j2.67
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
=
Z
Z
Device input impedance as measured from
gate to ground.
in
=
Test circuit impedance as measured from
drain to ground.
load
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 8. Series Equivalent Input and Load Impedance
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
8
PACKAGE DIMENSIONS
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
9
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
10
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977 Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Aug. 2009
Sept. 2009
Initial Release of Data Sheet
Modified Fig. 3, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and
Values to include temperature compensation options, p. 5
Fig. 3, Test Circuit Component Layout, corrected V
to V
, p. 5
GG1
DD1
Table 6, Test Circuit Component Designations and Values, C6, C17: updated description from “1 F
Tantalum Capacitors” to “1 F, 35 V Tantalum Capacitors”; L1, L7, L2, L6: corrected manufacturer from
Coilcraft to Toko; L3: corrected part number from “0603HC--1N6XJLC” to “0603HC--1N6XJLW”; L4, L5:
corrected part number from “100B100JT500XT” to “0603HP--5N1XJLW”; R1, R12: updated description
from “510 Chip Resistors” to “510 , 1/10 W Chip Resistors”, p. 5
2
Mar. 2011
Updated frequency in overview paragraph from “100 to 1000 MHz” to “20 to 1000 MHz” to reflect lower
20 MHz capability and narrow bandwidth modulation, p. 1
Updated IMD
Typical value from 180 MHz to 0.1 MHz and VBW Typical value from 210 MHz to
res
sym
0.1 MHz; modified Footnote 1 to reflect limited device capability regarding wide video bandwidth, Typical
Performance table, p. 4
2.1
3
Mar. 2012
Dec. 2013
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most
current board specifications from Rogers, p. 5
Replaced Case Outline 98ASA10760D, Rev. O with Rev. A, pp. 9--11. Mechanical outline drawing
modified to reflect the correct lead end features. Format of the mechanical outline was also updated to the
current Freescale format for Freescale mechanical outlines.
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
12
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
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respective owners.
E 2009, 2011--2013 Freescale Semiconductor, Inc.
Document Number: MW7IC008N
Rev. 3, 12/2013
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