GQM2195C2E100FB12D [NXP]
RF Power GaN Transistor;
| 型号： | GQM2195C2E100FB12D |
| 厂家： | 
NXP |
| 描述： | RF Power GaN Transistor 电容器 |
| 文件： | 总9页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3G26H502W17S
Rev. 1, 01/2021
NXP Semiconductors
Technical Data
RF Power GaN Transistor
This 80 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
A3G26H502W17S
This part is characterized and performance is guaranteed for applications
operating in the 2496 to 2690 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
2496–2690 MHz, 80 W Avg., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 48 Vdc, IDQA = 370 mA, VGSB = –4.6 Vdc, Pout = 80 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
V
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
14.4
15.0
14.8
(%)
48.4
49.3
51.2
7.8
8.2
7.8
–32.6
–35.2
–34.0
NI--780S--4S2S
1. All data measured in fixture with device soldered to heatsink.
Features
6
5
VBW
A
High terminal impedances for optimal broadband performance
Advanced high performance in--package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating
conditions
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
VBW
1.
B
(Top View)
Figure 1. Pin Connections
2020–2021 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
–8, 0
GS
DD
Operating Voltage
V
55
Maximum Forward Gate Current, I
Storage Temperature Range
, @ T = 25C
G (A+B)
I
GMAX
66
C
T
stg
–65 to +150
–55 to +150
225
Case Operating Temperature Range
Maximum Channel Temperature
T
C
C
T
CH
C
Table 2. Recommended Operating Conditions
Rating
Symbol
Value
Unit
Operating Voltage
V
48
Vdc
DD
Table 3. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(1)
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
R
0.71
C/W
JC
Case Temperature 74C, P = 110 W
D
(2)
Thermal Resistance by Finite Element Analysis, Channel--to--Case
R
CHC
1.23
C/W
Case Temperature 90C, P = 83 W
(FEA)
D
Table 4. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Drain--Source Breakdown Voltage
(V = –8 Vdc, I = 24 mAdc)
V
—
—
Vdc
(BR)DSS
Carrier
Peaking
150
150
GS
D
(V = –8 Vdc, I = 42 mAdc)
GS
D
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
–3.5
–3.1
–9.9
–2.6
–2.6
—
–2.3
–2.1
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 20 mAdc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 370 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
mAdc
GSS
DS
GS
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
–3.8
–9.9
–3.2
—
–2.3
—
Vdc
GS(th)
(V = 10 Vdc, I = 20 mAdc)
DS
D
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
mAdc
GSS
DS
GS
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
2. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where T is the channel temperature in degrees Celsius, A = –11.1 and B = 8366.
3. Each side of device measured separately.
(continued)
A3G26H502W17S
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests — 2496 MHz
(In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
= 370 mA,
DQA
DD
V
= –4.6 Vdc, P = 80 W Avg., f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
GSB
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
11.3
38.0
55.6
—
13.1
45.6
14.7
—
dB
%
ps
D
Drain Efficiency
P
, Pulsed CW
sat
P
56.6
—
dBm
dBc
sat
Adjacent Channel Power Ratio
ACPR
–35.6
–26.0
(1)
Functional Tests — 2690 MHz
(In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
DD DQA
= 370 mA,
V
= –4.6 Vdc, P = 80 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
GSB
out
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
11.4
37.0
13.2
45.0
14.8
—
dB
%
ps
D
Drain Efficiency
P
, Pulsed CW
P
56.0
56.7
—
dBm
dBc
sat
sat
Adjacent Channel Power Ratio
ACPR
—
–30.8
–24.0
Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) I
= 370 mA, V
= –4.6 Vdc, f = 2590 MHz, Additive
GSB
DQA
White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 140 W Avg. Modulated Output Power
(3 dB Input Overdrive from 80 W Avg. Modulated Output Power)
No Device Degradation
1. Part internally matched both on input and output.
(continued)
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration
Bias ON the device
1. Set gate voltage V
and V
to –5 V.
GSB
GSA
2. Set drain voltage V
and V
to nominal supply voltage (+48 V).
DSB
DSA
3. Increase V
4. Increase V
(carrier side) until I
current is attained.
DQA
GSA
GSB
(peaking side) to target bias voltage.
5. Apply RF input power to desired level.
Bias OFF the device
1. Disable RF input power.
2. Adjust gate voltage V
and V
to –5 V.
GSB
GSA
3. Adjust drain voltage V
and V
to 0 V. Allow adequate time
DSB
DSA
for drain voltage to reduce to 0 V from external drain capacitors.
4. Disable V and V
.
GSB
GSA
A3G26H502W17S
RF Device Data
NXP Semiconductors
3
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 370 mA, V = –4.6 Vdc,
GSB
Max
Unit
(1)
Typical Performance
2496–2690 MHz Bandwidth
(In NXP Doherty Characterization Test Fixture, 50 ohm system) V = 48 Vdc, I
DD
DQA
(2)
P
@ 3 dB Compression Point
P3dB
—
—
500
–8
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz bandwidth)
VBW Resonance Point
VBW
—
250
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 194 MHz Bandwidth @ P = 80 W Avg.
G
—
—
0.5
—
—
dB
out
F
Gain Variation over Temperature
G
0.033
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.023
—
dB/C
(–40C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
A3G26H502W17SR3
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
NI--780S--4S2S
1. All data measured in fixture with device soldered to heatsink.
2. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3G26H502W17S
RF Device Data
NXP Semiconductors
4
C24
C1
C2
C10
C11
C12
C26
R1
C14
C13
R3
C6
D121814
C15
C3
Z1
Q1
C16
C17
C18
C4
C5
C7
C19
R2
C20
C21
C8
C23
C22
C25
C9
A3G26H502W17S
Rev. 3
C27
aaa--039549
Note: All data measured in fixture with device soldered to heatsink. Production fixture does not
include device soldered to heatsink.
Figure 2. A3G26H502W17S Characterization Test Circuit Component Layout
Table 7. A3G26H502W17S Characterization Test Circuit Component Designations and Values
Part
Description
10 uF Chip Capacitor
Part Number
Manufacturer
C1, C9, C10, C11, C12, C14, C20, C21,
C22, C23
GRM32EC72A106KE05L
Murata
C2, C8, C13, C19
12 pF Chip Capacitor
GQM2195C2E120FB12D
GQM2195C2ER30BB12D
GQM2195C2ER50BB12D
GQM2195C2E100FB12D
GQM2195C2E3R9BB12D
GQM2195C2ER60BB12D
MCGPR100V477M16X32
A3G26H502W17S
Murata
Murata
Murata
Murata
Murata
Murata
Multicomp
NXP
C3
0.3 pF Chip Capacitor
C4, C5
C6, C7, C24, C25
C15, C17
C16, C18
C26, C27
Q1
0.5 pF Chip Capacitor
10 pF Chip Capacitor
3.9 pF Chip Capacitor
0.6 pF Chip Capacitor
470 F, 100 V Electrolytic Capacitor
RF Power GaN Transistor
3.3 , 1/4 W Chip Resistor
50 , 4 W Chip Resistor
2300–2700 MHz Band, 5 dB Directional Coupler
R1, R2
R3
CRCW12063R30JNEA
CW12010T0050GBK
X3C25P1-05S
Vishay
ATC
Z1
Anaren
MTL
PCB
Rogers RO3035, 0.020, = 3.66
D121814
r
A3G26H502W17S
RF Device Data
NXP Semiconductors
5
PACKAGE INFORMATION
A3G26H502W17S
RF Device Data
NXP Semiconductors
6
A3G26H502W17S
RF Device Data
NXP Semiconductors
7
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Nov. 2020
Jan. 2021
Initial release of data sheet
Table 1, Maximum Ratings: updated operating voltage for complete data sheet standardization, p. 2
Table 2, Recommended Operating Conditions: added to data sheet, p. 2
A3G26H502W17S
RF Device Data
NXP Semiconductors
8
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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nxp.com/support
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including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
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NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E 2020–2021 NXP B.V.
Document Number: A3G26H502W17S
Rev. 1, 01/2021
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