HEF4012BN [NXP]

Dual 4-input NAND gate; 两个4输入与非门
HEF4012BN
型号: HEF4012BN
厂家: NXP    NXP
描述:

Dual 4-input NAND gate
两个4输入与非门

文件: 总3页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
For a complete data sheet, please also download:  
The IC04 LOCMOS HE4000B Logic  
Family Specifications HEF, HEC  
The IC04 LOCMOS HE4000B Logic  
Package Outlines/Information HEF, HEC  
HEF4012B  
gates  
Dual 4-input NAND gate  
January 1995  
Product specification  
File under Integrated Circuits, IC04  
Philips Semiconductors  
Product specification  
HEF4012B  
gates  
Dual 4-input NAND gate  
DESCRIPTION  
The HEF4012B provides the positive dual 4-input NAND  
function. The outputs are fully buffered for highest noise  
immunity and pattern insensitivity of output impedance.  
Fig.2 Pinning diagram.  
HEF4012BP(N):  
HEF4012BD(F):  
HEF4012BT(D):  
14-lead DIL; plastic  
(SOT27-1)  
Fig.1 Functional diagram.  
14-lead DIL; ceramic (cerdip)  
(SOT73)  
14-lead SO; plastic  
(SOT108-1)  
( ): Package Designator North America  
Fig.3 Logic diagram (one gate).  
FAMILY DATA, IDD LIMITS category GATES  
see Family Specifications  
January 1995  
2
Philips Semiconductors  
Product specification  
HEF4012B  
gates  
Dual 4-input NAND gate  
AC CHARACTERISTICS  
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns  
VDD  
V
TYPICAL EXTRAPOLATION  
FORMULA  
SYMBOL  
TYP  
MAX  
Propagation delays  
In On  
HIGH to LOW  
5
70  
25  
20  
70  
30  
25  
60  
30  
20  
60  
30  
20  
135  
50  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
43 ns + (0,55 ns/pF) CL  
14 ns + (0,23 ns/pF) CL  
12 ns + (0,16 ns/pF) CL  
43 ns + (0,55 ns/pF) CL  
19 ns + (0,23 ns/pF) CL  
17 ns + (0,16 ns/pF) CL  
10 ns + (1,0 ns/pF) CL  
9 ns + (0,42 ns/pF) CL  
6 ns + (0,28 ns/pF) CL  
10 ns + (1,0 ns/pF) CL  
9 ns + (0,42 ns/pF) CL  
6 ns + (0,28 ns/pF) CL  
10  
15  
5
tPHL  
tPLH  
tTHL  
tTLH  
35  
140  
60  
LOW to HIGH  
10  
15  
5
50  
Output transition times  
HIGH to LOW  
120  
60  
10  
15  
5
40  
120  
60  
LOW to HIGH  
10  
15  
40  
VDD  
V
TYPICAL FORMULA FOR P (µW)  
2
Dynamic power  
dissipation per  
package (P)  
5
10  
15  
1100 fi + ∑ (foCL) × VDD  
where  
2
4400 fi + ∑ (foCL) × VDD  
fi = input freq. (MHz)  
2
12 900 fi + ∑ (foCL) × VDD  
fo = output freq. (MHz)  
CL = load capacitance (pF)  
(foCL) = sum of outputs  
V
DD = supply voltage (V)  
January 1995  
3

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