HEF4060BD [NXP]

14-stage ripple-carry binary counter/divider and oscillator; 14级纹波进位二进制计数器/除法器和振荡器
HEF4060BD
型号: HEF4060BD
厂家: NXP    NXP
描述:

14-stage ripple-carry binary counter/divider and oscillator
14级纹波进位二进制计数器/除法器和振荡器

振荡器 计数器 逻辑集成电路
文件: 总7页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
For a complete data sheet, please also download:  
The IC04 LOCMOS HE4000B Logic  
Family Specifications HEF, HEC  
The IC04 LOCMOS HE4000B Logic  
Package Outlines/Information HEF, HEC  
HEF4060B  
MSI  
14-stage ripple-carry binary  
counter/divider and oscillator  
January 1995  
Product specification  
File under Integrated Circuits, IC04  
Philips Semiconductors  
Product specification  
14-stage ripple-carry binary  
counter/divider and oscillator  
HEF4060B  
MSI  
be replaced by an external clock signal at input RS. The  
counter advances on the negative-going transition of RS.  
A HIGH level on MR resets the counter (O3 to O9 and  
O11 to O13 = LOW), independent of other input conditions.  
DESCRIPTION  
The HEF4060B is a 14-stage ripple-carry binary  
counter/divider and oscillator with three oscillator terminals  
(RS, RTC and CTC), ten buffered outputs (O3 to O9 and  
O11 to O13) and an overriding asynchronous master reset  
input (MR). The oscillator configuration allows design of  
either RC or crystal oscillator circuits. The oscillator may  
Schmitt-trigger action in the clock input makes the circuit  
highly tolerant to slower clock rise and fall times.  
Fig.1 Functional diagram.  
PINNING  
MR  
master reset  
RS  
clock input/oscillator pin  
oscillator pin  
RTC  
CTC  
external capacitor connection  
O3 to O9  
counter outputs  
O11 to O13  
HEF4060BP(N): 16-lead DIL; plastic (SOT38-1)  
HEF4060BD(F): 16-lead DIL; ceramic (cerdip) (SOT74)  
HEF4060BT(D): 16-lead SO; plastic (SOT109-1)  
( ): Package Designator North America  
Fig.2 Pinning diagram.  
FAMILY DATA, IDD LIMITS category MSI  
See Family Specifications  
January 1995  
2
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Fig.3 Logic diagram.  
Philips Semiconductors  
Product specification  
14-stage ripple-carry binary counter/divider  
and oscillator  
HEF4060B  
MSI  
AC CHARACTERISTICS  
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns  
VDD  
TYPICAL EXTRAPOLATION  
FORMULA  
SYMBOL MIN. TYP. MAX.  
V
Propagation delays  
RS O3  
5
10  
15  
5
210  
80  
50  
210  
80  
50  
25  
10  
6
420  
160  
100  
420  
160  
100  
50  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
MHz  
MHz  
MHz  
183 ns + (0,55 ns/pF) CL  
69 ns + (0,23 ns/pF) CL  
42 ns + (0,16 ns/pF) CL  
183 ns + (0,55 ns/pF) CL  
69 ns + (0,23 ns/pF) CL  
42 ns + (0,16 ns/pF) CL  
HIGH to LOW  
tPHL  
LOW to HIGH  
10  
15  
5
tPLH  
On On + 1  
HIGH to LOW  
10  
15  
5
tPHL  
20  
12  
25  
10  
6
50  
LOW to HIGH  
10  
15  
5
tPLH  
20  
12  
MR On  
100  
40  
30  
60  
30  
20  
60  
30  
20  
60  
25  
15  
25  
15  
10  
80  
40  
30  
8
200  
80  
73 ns + (0,55 ns/pF) CL  
29 ns + (0,23 ns/pF) CL  
22 ns + (0,16 ns/pF) CL  
10 ns + (1,0 ns/pF) CL  
9 ns + (0,42 ns/pF) CL  
6 ns + (0,28 ns/pF) CL  
10 ns + (1,0 ns/pF) CL  
9 ns + (0,42 ns/pF) CL  
6 ns + (0,28 ns/pF) CL  
HIGH to LOW  
10  
15  
5
tPHL  
60  
Output transition  
times  
120  
60  
10  
15  
5
tTHL  
HIGH to LOW  
40  
120  
60  
LOW to HIGH  
10  
15  
5
tTLH  
40  
Minimum clock pulse  
width input RS  
HIGH  
120  
50  
30  
50  
30  
20  
160  
80  
60  
4
10  
15  
5
tWRSH  
tWMRH  
tRMR  
fmax  
Minimum MR pulse  
width; HIGH  
10  
15  
5
Recovery time  
for MR  
10  
15  
5
Maximum clock pulse  
frequency input RS  
10  
15  
10  
15  
20  
30  
January 1995  
4
Philips Semiconductors  
Product specification  
14-stage ripple-carry binary counter/divider  
and oscillator  
HEF4060B  
MSI  
AC CHARACTERISTICS  
VSS = 0 V; Tamb = 25 °C; input transition times 20 ns  
VDD  
V
TYPICAL FORMULA FOR P (µW)(1)  
2
2
2
Dynamic power dissipation  
5
10  
15  
5
700 fi  
3 300 fi  
8 900 fi  
+
+
+
foCLVDD  
foCLVDD  
foCLVDD  
per package  
(P)  
2
2
Total power dissipation  
when using the  
on-chip oscillator (P)  
700 fosc + foCLVDD + 2CtVDD fosc  
+
+
690 VDD  
2
2
10  
15  
3 300 fosc + foCLVDD + 2CtVDD fosc  
6 900 VDD  
2
2
8 900 fosc + foCLVDD + 2CtVDD fosc + 22 000 VDD  
Notes  
1. where:  
fi = input frequency (MHz)  
fo = output frequency (MHz)  
CL = load capacitance (pF)  
VDD = supply voltage (V)  
Ct = timing capacitance (pF)  
fosc = oscillator frequency (MHz)  
RC oscillator  
Typical formula for oscillator frequency:  
1
fosc = --------------------------------  
2,3 × Rt × Ct  
Fig.4 External component connection for RC oscillator.  
January 1995  
5
Philips Semiconductors  
Product specification  
14-stage ripple-carry binary counter/divider  
and oscillator  
HEF4060B  
MSI  
Timing component limitations  
The oscillator frequency is mainly determined by  
RtCt, provided Rt << R2 and R2C2 << RtCt. The function  
of R2 is to minimize the influence of the forward voltage  
across the input protection diodes on the frequency. The  
stray capacitance C2 should be kept as small as possible.  
In consideration of accuracy, Ct must be larger than the  
inherent stray capacitance. Rt must be larger than the  
LOCMOS ‘ON’ resistance in series with it, which typically  
is 500 at VDD = 5 V, 300 at VDD = 10 V and 200 at  
VDD = 15 V.  
The recommended values for these components to  
maintain agreement with the typical oscillation formula are:  
Ct 100 pF, up to any practical value,  
10 kΩ ≤ Rt 1 M.  
Typical crystal oscillator circuit  
In Fig.5, R2 is the power limiting resistor. For starting and  
maintaining oscillation a minimum transconductance is  
necessary.  
Fig.5 External component connection for crystal  
oscillator.  
Fig.6 Test set-up for measuring forward transconductance gfs = dio/dvi at vo is constant (see also graph Fig.7);  
MR = LOW.  
January 1995  
6
Philips Semiconductors  
Product specification  
14-stage ripple-carry binary counter/divider  
and oscillator  
HEF4060B  
MSI  
A: average  
Ct curve at Rt = 100 k; R2 = 470 k.  
Rt curve at Ct = 1 nF; R2 = 5 Rt.  
B: average + 2 s,  
C: average 2 s, where ‘s’ is the observed standard deviation.  
Fig.7 Typical forward transconductance gfs as a  
Fig.8 RC oscillator frequency as a function of  
function of the supply voltage at Tamb = 25 °C.  
Rt and Ct at VDD = 5 to 15 V; Tamb = 25 °C.  
___ Rt = 100 k; Ct = 1 nF; R2 = 0.  
- - - Rt = 100 k; Ct = 1 nF; R2 = 300 k.  
Fig.9 Oscillator frequency deviation (fosc) as a function of ambient temperature; referenced at: fosc at  
Tamb = 25 °C and VDD = 10 V.  
January 1995  
7

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