HEF4070BN [NXP]

Quadruple exclusive-OR gate; 四倍异或门
HEF4070BN
型号: HEF4070BN
厂家: NXP    NXP
描述:

Quadruple exclusive-OR gate
四倍异或门

文件: 总4页 (文件大小:35K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
For a complete data sheet, please also download:  
The IC04 LOCMOS HE4000B Logic  
Family Specifications HEF, HEC  
The IC04 LOCMOS HE4000B Logic  
Package Outlines/Information HEF, HEC  
HEF4070B  
gates  
Quadruple exclusive-OR gate  
January 1995  
Product specification  
File under Integrated Circuits, IC04  
Philips Semiconductors  
Product specification  
HEF4070B  
gates  
Quadruple exclusive-OR gate  
DESCRIPTION  
The HEF4070B provides the positive quadruple  
exclusive-OR function. The outputs are fully buffered for  
highest noise immunity and pattern insensitivity of output  
impedance.  
Fig.2 Pinning diagram.  
HEF4070BP(N): 14-lead DIL; plastic  
(SOT27-1)  
HEF4070BD(F): 14-lead DIL; ceramic (cerdip)  
(SOT73)  
HEF4070BT(D): 14-lead SO; plastic  
(SOT108-1)  
( ): Package Designator North America  
Fig.1 Functional diagram.  
Fig.3 Logic diagram (one gate).  
APPLICATION INFORMATION  
TRUTH TABLE  
Some examples of applications for the HEF4070B are:  
Logical comparators  
I1  
I2  
O1  
L
H
L
L
L
L
H
H
L
Parity checkers and generators  
H
H
FAMILY DATA, IDD LIMITS category GATES  
H
See Family Specifications  
Note  
1. H = HIGH state (the more positive voltage)  
L = LOW state (the less positive voltage)  
January 1995  
2
Philips Semiconductors  
Product specification  
HEF4070B  
gates  
Quadruple exclusive-OR gate  
AC CHARACTERISTICS  
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns  
VDD  
V
TYPICAL EXTRAPOLATION  
FORMULA  
SYMBOL  
TYP.  
MAX.  
Propagation delays  
In On  
HIGH to LOW  
5
85  
35  
30  
75  
30  
25  
60  
30  
20  
60  
30  
20  
175  
75  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
58 ns  
24 ns  
21 ns  
48 ns  
19 ns  
17 ns  
10 ns  
9 ns  
+
+
+
+
+
+
+
+
+
+
+
+
(0,55 ns/pF) CL  
(0,23 ns/pF) CL  
(0,16 ns/pF) CL  
(0,55 ns/pF) CL  
(0,23 ns/pF) CL  
(0,16 ns/pF) CL  
(1,0 ns/pF) CL  
(0,42 ns/pF) CL  
(0,28 ns/pF) CL  
(1,0 ns/pF) CL  
(0,42 ns/pF) CL  
(0,28 ns/pF) CL  
10  
15  
5
tPHL  
55  
150  
65  
LOW to HIGH  
10  
15  
5
tPLH  
tTHL  
tTLH  
50  
Output transition times  
HIGH to LOW  
120  
60  
10  
15  
5
40  
6 ns  
120  
60  
10 ns  
9 ns  
LOW to HIGH  
10  
15  
40  
6 ns  
VDD  
V
TYPICAL FORMULA FOR P (µW)  
2
Dynamic power  
dissipation per  
package (P)  
5
10  
15  
1100 fi + ∑ (foCL) × VDD  
where  
2
4900 fi + ∑ (foCL) × VDD  
fi = input freq. (MHz)  
2
14 400 fi + ∑ (foCL) × VDD  
fo = output freq. (MHz)  
CL = load capacitance (pF)  
(foCL) = sum of outputs  
VDD = supply voltage (V)  
January 1995  
3
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