IP4386CX4/LF [NXP]
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4; 集成高性能ESD保护二极管IEC61000-4-2 , 4级型号: | IP4386CX4/LF |
厂家: | NXP |
描述: | Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 |
文件: | 总16页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IP4085CX4; IP4385CX4;
IP4386CX4; IP4387CX4
Integrated high-performance ESD-protection diodes to
IEC61000-4-2, level 4
Rev. 01 — 26 March 2009
Product data sheet
1. Product profile
1.1 General description
IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4 are designed to protect appliances
from destruction by either:
• ElectroStatic Discharges (ESD) of ±30 kV, far exceeding IEC 61000-4-2 standard,
level 4
• overvoltage
• wrong polarity
Each device has a single high-performance ESD-protection diode with the anode and
cathode each connected to two solder balls. The IP4085CX4, IP4385CX4, IP4386CX4
and IP4387CX4 are fabricated using monolithic silicon technology in a Wafer-Level
Chip-Scale Package (WLCSP) with a pitch of 0.4 mm (IP438xCX4) or 0.5 mm
(IP4085CX4).
1.2 Features
I Pb-free, RoHS and Dark Green compliant
I Single integrated high-performance ESD-protection diode
I Surge immunity according to IEC 61000-4-5 (8/20 µs) up to 60 A (IP4085CX4)
I ESD protection of >30 kV contact discharge, far exceeding IEC 61000-4-2 standard,
level 4
I Small 2 × 2 solder ball WLCSP package with 0.4 mm or 0.5 mm pitch
1.3 Applications
I General purpose ESD-protection such as for charger interfaces in:
N Cellular and PCS mobile handsets
N Cordless telephones
N Wireless data (WAN/LAN) systems
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
2. Pinning information
IP4085CX4
IP438xCX4
ball A1
index area
1
2
A
B
001aaj238
Transparent top view
Fig 1. Pin configuration IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4
Table 1.
Pin
Pinning
Description
diode cathode
diode anode
A1 and A2
B1 and B2
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
IP4085CX4/LF
IP4385CX4/LF
IP4386CX4/LF
IP4387CX4/LF
WLCSP4
WLCSP4
WLCSP4
WLCSP4
wafer level chip-size package: 4 bumps; 0.91 × 0.91 × 0.65 mm
wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm
wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm
wafer level chip-size package: 4 bumps; 0.76 × 0.76 × 0.61 mm
IP4085CX4/LF
IP438xCX4/LF
IP438xCX4/LF
IP438xCX4/LF
4. Functional diagram
A1
B1
A2
B2
001aaj239
Fig 2. Schematic diagram IP4085CX4; IP4385CX4; IP4386CX4; IP4387CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
2 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
5. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
IP4085CX4/LF;
IP4386CX4/LF
−0.5
+14
V
IP4385CX4/LF
IP4387CX4/LF
all pins to ground
contact discharge
air discharge
−0.5
−0.5
+5.5
+8.0
V
V
VESD
electrostatic discharge voltage
[1]
[1]
−30
−15
+30
+15
kV
kV
IEC 61000-4-2, level 4;
all pins to ground
contact discharge
air discharge
−8
+8
kV
kV
−15
+15
IPP
peak pulse current
IEC 61000-4-5;
tp = 8/20 µs
IP4085CX4
60
33
-
-
A
A
IP4385CX4;
IP4387CX4
IP4386CX4
28
-
A
IFSM
non-repetitive peak forward
current
10 pulses; 1 pulse per
second
IP4085CX4;
IP4386CX4;
tp = 2 ms
10
8.5
3.5
11
9
-
-
-
-
-
-
A
A
A
A
A
A
IP4085CX4;
IP4386CX4;
tp = 5 ms
IP4085CX4;
IP4386CX4;
tp = 100 ms
IP4385CX4;
IP4387CX4;
tp = 2 ms
IP4385CX4;
IP4387CX4;
tp = 5 ms
IP4385CX4;
IP4387CX4;
tp = 100 ms
5
[2]
[3]
[3]
Ptot
total power dissipation
forward conducting
IP4085CX4
-
-
1
W
W
IP4385CX4;
IP4386CX4;
IP4387CX4
0.7
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
3 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tstg
Parameter
Conditions
Min
−55
-
Max
+150
260
Unit
°C
storage temperature
peak reflow temperature
ambient temperature
Treflow(peak)
Tamb
10 s maximum
°C
−30
+85
°C
[1] Device tested with over 1000 pulses of ±30 kV contact discharges, according to the IEC 61000-4-2 model.
[2] Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures
above 50 °C, the guaranteed life time is 48 hours at 0.7 W, assuming Rth to be 130 K/W as specified in Table 4.
[3] Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.
6. Thermal characteristics
Table 4.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
-
Unit
thermal resistance from junction on a 2-layer PCB
to ambient
[1]
IP4085CX4;
130
K/W
IP4385CX4;
IP4386CX4;
IP4387CX4
[1] Depends on details of layout.
7. Characteristics
Table 5.
Electrical characteristics
Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VBR
breakdown voltage
IR = 15 mA
IP4085CX4; IP4386CX4
IP4385CX4
16
7.0
10
-
-
-
-
-
-
V
V
V
IP4387CX4
VCL(trt)
transient clamping voltage
IR = 1 A; Tamb ≤ 85 °C at surge peak
pulse according to IEC 61000-4-5
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
-
-
-
-
-
-
-
-
20.0
10.0
20.0
13.0
V
V
V
V
ILR
reverse leakage current
IP4085CX4; IP4385CX4
IP4386CX4
VR = +5.0 V
VR = +14.0 V
VR = +8.0 V
-
-
-
-
-
-
200
200
800
nA
nA
nA
IP4387CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
4 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
Table 5.
Electrical characteristics …continued
Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
IP4085CX4
DC bias VR = 0 V; f = 1 MHz
-
-
-
-
180
450
160
290
-
-
-
-
pF
pF
pF
pF
IP4385CX4
IP4386CX4
IP4387CX4
VFd
diode forward voltage
IP4085CX4
IF = 850 mA
T
amb ≥ +25 °C
−30 °C ≤ Tamb ≤ +85 °C
amb ≥ +25 °C
−30 °C ≤ Tamb ≤ +85 °C
amb ≥ +25 °C
−30 °C ≤ Tamb ≤ +85 °C
amb ≥ +25 °C
−30 °C ≤ Tamb ≤ +85 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.15
1.3
V
V
V
V
V
V
V
V
IP4385CX4
IP4386CX4
IP4387CX4
T
1.0
1.1
T
1.15
1.3
T
1.10
1.25
8. Application information
8.1 Forward current DC clamping voltage
The forward current DC clamping voltage is of interest when protecting circuits from
voltage sources with the wrong polarity. Figure 3 shows the basic measurement setup.
V
CL
I
F
V
001aaj240
Fig 3. Measuring DC clamping voltage with forward current
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
5 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
001aaj241
001aaj242
1.1
1.1
V
V
CL
CL
(V)
(V)
(1)
(2)
(3)
1.0
1.0
(1)
(2)
(3)
0.9
0.8
0.7
0.9
0.8
0.7
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
I
(A)
I (A)
F
F
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 4. DC clamping voltage as a function of forward
current; IP4085CX4
Fig 5. DC clamping voltage as a function of forward
current; IP4385CX4
001aaj243
001aaj244
1.1
1.1
V
(V)
V
CL
(V)
CL
(1)
(2)
(3)
(1)
(2)
(3)
1.0
1.0
0.9
0.8
0.7
0.9
0.8
0.7
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
I
(A)
I (A)
F
F
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 6. DC clamping voltage as a function of forward
current; IP4386CX4
Fig 7. DC clamping voltage as a function of forward
current; IP4387CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
6 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
8.2 Peak clamping voltage
The peak clamping voltage for forward and reverse current pulses of 8/20 µs
(IEC 61000-4-5) is significant when protecting circuits from power surges due to voltage
discharges. The current pulse shape over time is shown in Figure 9. The basic
measurement setup for forward current and reverse current pulses respectively are shown
in Figure 8 and Figure 14.
V
CL(M)
V
I
PP
001aaj245
Fig 8. Measuring peak clamping voltage with forward current
001aaj558
120
100 % I ; 8 µs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 µs
PP
40
0
0
10
20
30
40
t (µs)
Fig 9. 8/20 µs current pulse waveform according to IEC 61000-4-5
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
7 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
001aaj247
001aaj248
17
20
V
CL(M)
(V)
V
CL(M)
(V)
15
13
11
9
(3)
16
12
8
(1)
(3)
(2)
(1)
(2)
7
20
28
36
44
20
28
36
44
I
(A)
I (A)
F
F
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 10. Peak clamping voltage as a function of forward
current; IP4085CX4
Fig 11. Peak clamping voltage as a function of forward
current; IP4385CX4
001aaj249
001aaj250
20
20
(3)
(2)
V
(1)
V
CL(M)
(V)
CL(M)
(V)
16
12
8
16
12
8
(2)
(3)
(1)
20
28
36
44
20
28
36
44
I
(A)
I (A)
F
F
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 12. Peak clamping voltage as a function of forward
current; IP4386CX4
Fig 13. Peak clamping voltage as a function of forward
current; IP4387CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
8 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
V
CL(M)
V
I
PP
001aaj246
Fig 14. Measuring peak clamping voltage with reverse current
001aaj251
8.75
001aaj252
19
V
CL(M)
(V)
(2)
V
CL(M)
(V)
8.50
8.25
8.00
7.75
7.50
(2)
(1)
18
17
16
(1)
(3)
(3)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(A)
1.6
0.4
0.8
1.2
1.6
I
I (A)
R
R
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 15. Peak clamping voltage as a function of reverse
current; IP4085CX4
Fig 16. Peak clamping voltage as a function of reverse
current; IP4385CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
9 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
001aaj253
001aaj254
19
12.2
(2)
V
V
CL(M)
(V)
CL(M)
(V)
(2)
18
17
16
11.8
11.4
11.0
(1)
(3)
(1)
(3)
0.3
0.7
1.1
1.5
0.4
0.8
1.2
1.6
I
(A)
I (A)
R
R
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
(1) Tamb = +25 °C.
(2) Tamb = +85 °C.
(3) Tamb = −30 °C.
Fig 17. Peak clamping voltage as a function of reverse
current; IP4386CX4
Fig 18. Peak clamping voltage as a function of reverse
current; IP4387CX4
Remark: Measurements done on a heat-dissipation optimized PCB with massive copper
area under the DUT.
9. Marking
ball A1
index area
1
2
A
B
lot/date code information
(characters are marked
upside down)
001aaj255
Transparent top view
Fig 19. Marking of IP4085CX4, IP4385CX4, IP4386CX4 and IP4387CX4
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
10 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
10. Package outline
WLCSP4: wafer level chip-size package; 4 bumps; 0.91 x 0.91 x 0.65 mm
IP4085CX4/LF
D
B
A
ball A1
index area
E
A
A
1
detail X
e
C
y
b
v
C A
B
B
e
A
ball A1
index area
1
2
X
0
0.5
scale
1 mm
Dimensions
Unit
A
A
b
D
E
e
v
y
1
max 0.70 0.26 0.37 0.96 0.96
mm nom 0.65 0.24 0.32 0.91 0.91 0.5 0.005 0.02
min 0.60 0.22 0.27 0.86 0.86
ip4085cx4_lf_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
IP4085CX4/LF
08-12-04
Fig 20. Package outline IP4085CX4/LF (WLCSP4)
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
11 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
WLCSP4: wafer level chip-size package; 4 bumps; 0.76 x 0.76 x 0.61 mm
IP438xCX4/LF
D
B
A
ball A1
index area
E
A
A
1
detail X
e
C
y
b
v
C A
B
B
e
A
ball A1
index area
1
2
X
0
y
0.25
0.5 mm
scale
Dimensions
Unit
A
A
b
D
E
e
v
1
max 0.66 0.22 0.31 0.81 0.81
mm nom 0.61 0.20 0.26 0.76 0.76 0.4 0.005 0.02
min 0.56 0.18 0.21 0.71 0.71
ip438xcx4_lf_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
IP438xCX4/LF
08-12-04
Fig 21. Package outline IP438xCX4/LF (WLCSP4)
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
12 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
11. Design and assembly recommendations
11.1 PCB design guidelines
For optimum performance it is recommended to use a Non-Solder Mask PCB Design
(NSMD), also known as a copper-defined design, incorporating laser-drilled micro-vias
connecting the ground pads to a buried ground-plane layer. This results in the lowest
possible ground inductance and provides the best high frequency and ESD performance.
For this case, refer to Table 6 for the recommended PCB design parameters.
Table 6.
Recommended PCB design parameters
Parameter
Value or Specification
200 µm
PCB pad diameter
Micro-via diameter
Solder mask aperture diameter
Copper thickness
Copper finish
100 µm (0.004 inch)
370 µm
20 µm to 40 µm
AuNi
PCB material
FR4
11.2 PCB assembly guidelines for Pb-free soldering
Table 7.
Assembly recommendations
Parameter
Value or Specification
330 µm
Solder screen aperture diameter
Solder screen thickness
Solder paste: Pb-free
Solder/flux ratio
100 µm (0.004 inch)
SnAg (3 % to 4 %) Cu (0.5 % to 0.9 %)
50/50
Solder reflow profile
see Figure 22
T
(°C)
T
reflow(peak)
250
230
217
cooling rate
pre-heat
t (s)
t
t
2
1
t
t
3
4
t
5
001aai943
The device is capable of withstanding at least three reflows of this profile.
Fig 22. Pb-free solder reflow profile
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
13 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
Table 8.
Symbol
Treflow(peak) peak reflow temperature
Reflow soldering process characteristics
Parameter
Conditions
Min
230
60
-
Typ
Max Unit
-
-
-
-
-
-
-
-
260
180
30
°C
s
t1
time 1
time 2
time 3
time 4
time 5
soak time
t2
time during T ≥ 250 °C
time during T ≥ 230 °C
time during T > 217 °C
s
t3
10
30
-
50
s
t4
150
540
−6
s
t5
s
dT/dt
rate of change of
temperature
cooling rate
pre-heat
-
°C/s
°C/s
2.5
4.0
12. Abbreviations
Table 9.
Abbreviations
Description
Acronym
DUT
Device Under Test
FR4
Flame Retard 4
LAN
Local Area Network
Printed-Circuit Board
PCB
PCS
Personal Communication System
Restriction of Hazardous Substances
Wide Area Network
RoHS
WAN
WLCSP
Wafer-Level Chip-Scale Package
13. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
IP4085_4385_4386_4387_CX4_1
20090326
Product data sheet
-
-
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
14 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
IP4085_4385_4386_4387_CX4_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2009
15 of 16
IP4085/4385/4386/4387/CX4
NXP Semiconductors
Integrated high-performance ESD-protection diodes
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
8.1
8.2
Application information. . . . . . . . . . . . . . . . . . . 5
Forward current DC clamping voltage . . . . . . . 5
Peak clamping voltage . . . . . . . . . . . . . . . . . . . 7
9
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10
11
11.1
11.2
Design and assembly recommendations . . . 13
PCB design guidelines . . . . . . . . . . . . . . . . . . 13
PCB assembly guidelines for Pb-free
soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12
13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 March 2009
Document identifier: IP4085_4385_4386_4387_CX4_1
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