IRFZ44NS/T3 [NXP]
TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power;型号: | IRFZ44NS/T3 |
厂家: | NXP |
描述: | TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
standard level field-effect power
transistor in a surface mounting
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
useinswitchedmodepowersupplies
and general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
Tj
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
55
49
110
175
22
V
A
W
˚C
mΩ
RDS(ON)
resistance
VGS = 10 V
PINNING - SOT404 (D2PAK)
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
mb
gate
2
drain
g
3
source
2
mb drain
s
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
-
-
-
-
-
-
-
-
55
55
20
49
35
160
110
175
V
V
V
A
A
A
W
˚C
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Ptot
Tstg, Tj
- 55
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge capacitor
voltage, all pins
Human body model
(100 pF, 1.5 kΩ)
-
2
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-mb
Thermal resistance junction to
mounting base
-
-
1.4
K/W
Rth j-a
Thermal resistance junction to
ambient
Minimum footprint, FR4
board
50
-
K/W
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
VGS(TO)
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA;
55
50
2.0
1.0
-
-
-
-
-
16
-
-
-
-
-
-
V
V
V
V
Tj = -55˚C
VDS = VGS; ID = 1 mA
3.0
-
-
0.05
-
0.04
-
-
4.0
-
4.4
10
500
1
20
-
22
42
Tj = 175˚C
Tj = -55˚C
IDSS
IGSS
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
Gate source leakage current VGS = ±10 V; VDS = 0 V
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
resistance
µA
µA
µA
µA
V
mΩ
mΩ
Tj = 175˚C
Tj = 175˚C
±V(BR)GSS
RDS(ON)
VGS = 10 V; ID = 25 A
15
-
Tj = 175˚C
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 25 A
6
-
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
1350 1800
pF
pF
pF
330
155
400
215
Qg
Qgs
Qgd
Total gate charge
Gate-cource charge
Gate-drain (miller) charge
VDD = 44 V; ID = 50 A; VGS = 10 V
-
-
-
-
-
-
62
15
26
nC
nC
nC
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
-
-
-
-
18
50
40
30
26
75
50
40
ns
ns
ns
ns
Ld
Ls
Internal drain inductance
Internal source inductance
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
-
2.5
7.5
-
-
nH
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
current
-
-
49
A
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
-
-
-
-
160
1.2
-
A
V
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
0.95
1.0
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 40 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
-
47
0.15
-
-
ns
µC
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 45 A; VDD ≤ 25 V;
-
-
110
mJ
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
Normalised Power Derating
1000
ID/A
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
tp =
RDS(ON) =VDS/ID
100
1 us
10us
100 us
1 ms
DC
10
10ms
100ms
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1
1
10
100
VDS/V
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth/(K/W)
10
Normalised Current Derating
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
1
0.5
0.2
0.1
0.1
0.05
t
p
p
t
P
D
D =
T
0.02
0
t
0.01
T
0.001
0
20
40
60
80
100 120 140 160 180
1E-06
0.0001
0.01
t/s
1
100
Tmb /
C
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
100
30
gfs/S
25
16
10
9
VGS/V =
ID/A
80
8.0
7.5
7.0
6.5
8.5
20
15
10
5
60
40
20
0
6.0
5.5
5.0
4.5
4.0
0
0
20
40
60
80
100
0
2
4
6
8
10
VDS/V
ID/A
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
RDS(ON)/mOhm
Rds(on) normlised to 25degC
a
40
2.5
2
VGS/V =
35
6
30
6.5
7
1.5
1
25
8
9
20
10
15
10
0.5
-100
-50
0
50
Tmb / degC
100
150
200
0
10
20
30
40
50
60
70
80
90
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 10 V
100
ID/A
80
VGS(TO) / V
max.
5
4
3
2
1
0
typ.
60
40
20
min.
Tj/C =
175
25
0
-100
-50
0
50
Tj / C
100
150
200
0
2
4
6
8
10
12
VGS/V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
100
IF/A
Sub-Threshold Conduction
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
80
60
40
20
0
2%
typ
98%
Tj/C =
175
25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
5
VSDS/V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
2.5
2
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
1.5
1
Ciss
ThouandspF
.5
0
Coss
Crss
20
40
60
80
100
120
140
160
180
0.01
0.1
1
10
100
VDS/V
Tmb /
C
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 49 A
12
VGS/V
10
VDD
+
L
VDS = 14V
8
6
4
2
0
VDS
VDS = 44V
-
VGS
-ID/100
T.U.T.
0
R 01
RGS
shunt
0
10
20
30
40
50
QG/nC
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
)
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
VDD
+
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
February 1999
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
MECHANICAL DATA
Plastic single-ended package (Philips version of D2-PAK); 2 leads
SOT404
A
A
E
1
D
1
D
H
D
L
p
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
E
A
A
b
UNIT
c
D
D
e
L
H
Q
1
1
p
D
4.5
4.1
1.40
1.27
0.85
0.60
0.64
0.46
9.65
8.65
1.6
1.2
10.3
9.7
2.9
2.1
15.4
14.8
2.60
2.20
mm
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-16
SOT404
Fig.18. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
February 1999
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOSTM transistor
IRFZ44NS
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.19. SOT404 : soldering pattern for surface mounting.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
8
Rev 1.000
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