J108 [NXP]
N-channel silicon junction FETs; N沟道硅结场效应晶体管
| 型号： | J108 |
| 厂家： | 
NXP |
| 描述： | N-channel silicon junction FETs |
| 文件： | 总7页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
FEATURES
PINNING - TO-92
• High speed switching
PIN
SYMBOL
DESCRIPTION
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).
1
2
3
g
s
d
gate
source
drain
APPLICATIONS
• Analog switches
• Choppers and commutators.
1
handbook, halfpage
2
DESCRIPTION
3
d
g
s
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
MAM197
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
V
VGSoff
gate-source cut-off voltage
ID = 1 µA; VDS = 5 V
J108
−3
−10
−6
V
V
V
J109
−2
J110
−0.5
−4
IDSS
drain current
VGS = 0; VDS = 5 V
J108
80
40
10
−
−
mA
mA
mA
mW
J109
−
J110
−
Ptot
total power dissipation
up to Tamb = 50 °C
400
1996 Jul 30
2
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
−
−
−
−
V
V
V
VGSO
VGDO
IG
gate-source voltage
open drain
−25
−25
50
gate-drain voltage
open source
forward gate current (DC)
total power dissipation
storage temperature
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 50 °C
400
150
150
−65
operating junction temperature
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
250
UNIT
Rth j-a
thermal resistance from junction to ambient
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
IG = −1 µA; VDS = 0
ID = 1 µA; VDS = 5 V
MIN.
TYP.
MAX.
−25
UNIT
gate-source breakdown voltage
−
−
V
V
V
V
V
gate-source cut-off voltage
J108
−3
−
−
−
−10
−6
J109
−2
J110
−0.5
−4
IDSS
drain current
VGS = 0; VDS = 15 V
J108
80
40
10
−
−
−
−
−
−
−
mA
mA
mA
nA
J109
−
J110
−
IGSS
gate leakage current
VGS = −15 V; VDS = 0
VGS = −10 V; VDS = 5 V
VGS = 0; VDS = 100 mV
−3
3
IDSX
drain-source cut-off current
−
nA
RDSon
drain-source on-state resistance
J108
J109
J110
−
−
−
−
−
−
8
Ω
Ω
Ω
12
18
1996 Jul 30
3
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
Cis
PARAMETER
input capacitance
CONDITIONS
VDS = 0; VGS = −10 V; f = 1 MHz
VDS = 0; VGS = 0; f = 1 MHz;
TYP.
15
MAX.
30
UNIT
pF
50
85
pF
Tamb = 25 °C
Crs
reverse transfer capacitance
VDS = 0; VGS = −10 V; f = 1 MHz
8
15
pF
Switching times; see Fig.2
td
delay time
note 1
2
4
4
6
−
−
−
−
ns
ns
ns
ns
ton
ts
turn-on time
storage time
turn-off time
toff
Note
1. Test conditions for switching times are as follows:
DD = 1.5 V; VGS = 0 to VGSoff (all types)
V
VGSoff = −12 V; RL = 100 Ω (J108)
VGSoff = −7 V; RL = 100 Ω (J109)
VGSoff = −5 V; RL = 100 Ω (J110).
0.1 µF
handbook, halfpage
50 Ω
V
DD
10 nF
10 µF
R
L
SAMPLING
SCOPE
50 Ω
DUT
50 Ω
MGE773
Fig.2 Switching circuit.
1996 Jul 30
4
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
V
= 0 V
GS
10%
90%
V
i
V
GS off
t
t
on
off
t
t
t
t
r
s
f
d
90%
10%
V
o
MGE774
Fig.3 Input and output waveforms.
1996 Jul 30
5
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
PACKAGE OUTLINE
n
0.40
min
4.2 max
1.7
1.4
5.2 max
12.7 min
0.48
0.40
1
4.8
max
2.54
2
3
0.66
0.56
(1)
MBC014 - 1
2.0 max
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
Fig.4 TO-92 (SOT54).
1996 Jul 30
6
Philips Semiconductors
Productspecification
N-channel silicon junction FETs
J108; J109; J110
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 30
7
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