JA101P-AMMO [NXP]
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal;型号: | JA101P-AMMO |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal 晶体 晶体管 |
文件: | 总8页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
JA101
PNP general purpose transistor
1998 Aug 04
Product specification
Supersedes data of 1997 Mar 10
File under Discrete Semiconductors, SC10
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
base
collector
emitter
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
1
handbook, halfpage
2
3
2
3
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC501.
1
MAM285
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−50
UNIT
VCBO
VCEO
ICM
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
V
−45
−200
500
600
−
V
mA
Ptot
hFE
fT
Tamb ≤ 25 °C
mW
IC = −1 mA; VCE = −5 V
135
100
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
MHz
1998 Aug 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−45
open collector
−5
−100
−200
−100
500
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1998 Aug 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −45 V
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
−
−
−
−
−
−
−15
−4
nA
IE = 0; VCB = −45 V; Tj = 125 °C
IC = 0; VEB = −5 V
µA
IEBO
hFE
emitter cut-off current
DC current gain
JA101
−100 nA
IC = −1 mA; VCE = −5 V
135
135
200
300
−
−
600
JA101P
−
270
JA101Q
−
400
JA101R
−
600
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
−
−300 mV
−
−500
−700
−850
−
−
−
−
mV
mV
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
−
−
VBE
Cc
Ce
fT
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IC = −2 mA; VCE = −5 V
−550
−
−700 mV
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
6
pF
−
12
130
−
−
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
MHz
dB
F
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 200 Hz
1998 Aug 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
1998 Aug 04
5
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 04
6
Philips Semiconductors
Product specification
PNP general purpose transistor
JA101
NOTES
1998 Aug 04
7
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115104/00/03/pp8
Date of release: 1998 Aug 04
Document order number: 9397 750 04108
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