KMZ10B [NXP]
Magnetic field sensor; 磁科幻场传感器
| 型号： | KMZ10B |
| 厂家： | 
NXP |
| 描述： | Magnetic field sensor |
| 文件： | 总8页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
KMZ10B
Magnetic field sensor
1998 Mar 31
Product specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
DESCRIPTION
The KMZ10B is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
position measurement, proximity detectors, etc.
H
y
handbook, halfpage
H
x
PINNING
1
2 3 4
MGD806
PIN
SYMBOL
DESCRIPTION
1
2
3
4
+VO
GND
−VO
VCC
output voltage
ground
output voltage
supply voltage
Fig.1 Simplified outline SOT195.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC
Hy
Hx
S
bridge supply voltage
magnetic field strength
−
5
−
3
4
12
+2
−
V
−2
−
kA/m
kA/m
auxiliary field
sensitivity
−
−
mV ⁄ V
----------------
kA ⁄ m
Rbridge
Voffset
bridge resistance
offset voltage
1.6
−
−
2.6
kΩ
−1.5
+1.5
mV/V
CIRCUIT DIAGRAM
MLC716
1
2
3
4
+V
GND
–V
V
O
O
CC
Fig.2 Simplified circuit diagram.
2
1998 Mar 31
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
bridge supply voltage
CONDITIONS
MIN.
MAX.
12
UNIT
VCC
Ptot
−
−
V
total power dissipation
storage temperature
up to Tamb = 130 °C
120
mW
°C
Tstg
−65
−40
+150
+150
Tbridge
bridge operating temperature
°C
MSA927
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50
100
150
o
T
amb
( C)
Fig.3 Power derating curve.
1998 Mar 31
3
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
180
K/W
CHARACTERISTICS
Tamb = 25 °C; Hx = 3 kA/m; note 1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
Hy
S
bridge supply voltage
magnetic field strength
sensitivity
−
5
−
−
−
V
−2
+2
kA/m
open circuit, notes 2 and 3 3.2
4.8
mV ⁄ V
----------------
kA ⁄ m
TCVO
temperature coefficient of
output voltage
VCC = 5 V;
Tj = −25 to +125 °C
−
−
−0.4
−
−
%/K
IB = 3 mA;
−0.1
%/K
Tj = −25 to +125 °C
Rbridge
bridge resistance
1.6
−
2.6
kΩ
TCRbridge temperature coefficient of
bridge resistance
Tbridge = −25 to +125 °C
Tj = −25 to +125 °C
−
0.3
−
%/K
Voffset
offset voltage
−1.5
−3
−
−
+1.5
mV/V
TCVoffset offset voltage drift
+3
µ V ⁄ V
---------------
K
FL
linearity deviation of output
voltage
Hy = 0 to ±1 kA/m
Hy = 0 to ±1.6 kA/m
Hy = 0 to ±2 kA/m
−
−
−
−
0
−
−
−
−
−
±0.5
±1.7
±2
% FS
% FS
% FS
% FS
MHz
FH
f
hysteresis of output voltage
operating frequency
0.5
1
Notes
1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field
Hx = 3 kA/m.
2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
(V O at Hy = 1.6 kA ⁄ m) – (VO at Hy = 0)
3. S =
.
---------------------------------------------------------------------------------------------------------------
1.6 × VCC
1998 Mar 31
4
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
MGD802
MGD803
2
20
H
d
(kA/m)
S
(H )
x
S
(3 kA/m)
H
x
H
y
H
d
1
10
safe operating
area
(1)
H
> 1 kA/m
(2)
y
H
≥ 1 kA/m
y
0
0
0
1
2
3
4
H
5
0
1
2
3
4
H
5
(kA/m)
(kA/m)
x
x
In applications with Hx < 3 kA/m, the sensor has to be reset,
after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m.
(1) Region of permissible operation.
In applications with Hx ≤ 3 kA/m, the sensor has to be
reset by an auxiliary field of Hx = 3 kA/m before using.
(2) Permissible extension if Hy < 1 kA/m.
Fig.4 Safe Operating Area (permissible disturbing
field Hd as a component of auxiliary field Hx).
Fig.5 Relative sensitivity (ratio of sensitivity at
certain Hx and sensitivity at Hx = 3 kA/m).
MSA926
max
typ
min
8
V
o
(mV/V)
4
0
4
8
2
1
0
1
2
H
(kA/m)
y
VB = constant; Hx = 3 kA/m; Tamb = 25 °C; Voffset = 0.
Fig.6 Sensor output characteristics.
1998 Mar 31
5
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
PACKAGE OUTLINE
Plastic single-ended flat package; 4 in-line leads
SOT195
E
Q
b
1
A
chip
D
L
1
L
1
2
3
4
e
b
1
p
c
e
0
1
4 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
b
b
c
e
e
Q
A
D
E
L
p
1
1
max.
1.8
1.6
0.48
0.40
0.7
0.5
0.45
0.39
5.2
5.0
4.8
4.4
14.5
12.7
0.8
0.7
mm
3.75
1.25
2
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
SOT195
97-06-02
1998 Mar 31
6
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ10B
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 31
7
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© Philips Electronics N.V. 1998
SCA58
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115106/00/03/pp8
Date of release: 1998 Mar 31
Document order number: 9397 750 03639
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