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KMZ60,115 [NXP]

KMZ60 - Angle sensor with integrated amplifier SOIC 8-Pin;
KMZ60,115
型号： KMZ60,115
厂家： NXP    NXP
描述：

KMZ60 - Angle sensor with integrated amplifier SOIC 8-Pin

输出元件 传感器 换能器
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KMZ60  
SO8  
Angle sensor with integrated amplifier  
Rev. 2 — 7 February 2014  
Product data sheet  
1. Product profile  
1.1 General description  
The MagnetoResistive (MR) sensor with integrated amplifier is designed for angular  
control applications and BrushLess DC (BLDC) motors with even-numbered pole pairs.  
It consists of two microchips within one package, an angle sensor and an amplifier  
Integrated Circuit (IC). The circuit delivers cosine and sine output signals related to the  
angle of a rotating magnetic field. The output voltage range is ratiometric related to the  
supply voltage. The Temperature Coefficient (TC) of the sensor amplitude can be  
compensated. A ratiometric output voltage linear to the temperature is delivered.  
A Power-down mode is implemented.  
1.2 Features and benefits  
High precision sensor for magnetic angle measurement  
Single-ended cosine and sine outputs  
Ratiometric output voltages  
Tamb = 40 C to +150 C  
Temperature compensated output signal amplitude  
Temperature related ratiometric reference voltage  
Power-down mode to enable or disable the device  
Single package angle sensor with integrated instrumentation amplifier  
RoHS compliant and free of halogen and antimony (Dark Green compliant)  
1.3 Applications  
The KMZ60 angle sensor is dedicated for rotor position detection for BLDC motors.  
Beyond that the KMZ60 is applicable for Electronic Power Steering (EPS) applications,  
steering angle measurement, window wiper position detection and general contactless  
angular measurement (e.g. throttle valves or actuators). The KMZ60 is fully automotive  
qualified as well as applicable for industrial and consumer applications.  
Typical applications:  
BLDC motor (e.g. EPS)  
Window wiper position detection  
Steering angle measurement  
General contactless angular measurement (e.g. throttle valves or actuators)  
Automotive, industrial and consumer applications  
 
 
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Parameter  
Symbol  
VCC  
Conditions  
Min  
2.7  
0
Typ  
Max  
Unit  
supply voltage  
-
-
5.5  
V
nH  
magnetic field rotational  
frequency  
25000 r/min  
[1]  
[2]  
[3]  
[4]  
[5]  
Hext  
external magnetic field  
strength  
25  
-
-
-
-
-
-
kA/m  
deg  
nF  
  
angular inaccuracy  
within a static  
field  
0.1  
100  
5
+0.1  
-
Cblock(ext)  
RL(o)ext  
CL(o)ext  
external blocking  
capacitance  
external output load  
resistance  
on pin VOUT1  
and pin VOUT2  
k  
external output load  
capacitance  
0.5  
10  
nF  
[1] Induced voltage from a rotating strong magnetic field may impact the performance but without damage.  
[2] Value calculated only with third and fifth harmonic of the spectrum of output signal amplitude Vo(VOUT1) and  
Vo(VOUT2) by ideal homogeneous field.  
[3] Between pin VCC and pin GND, soldered close to the package.  
[4] Operating as sink or source.  
[5] Between pin VOUT1 and pin VCC or pin GND and between pin VOUT2 and pin VCC or pin GND.  
2. Pinning information  
Table 2.  
Pinning  
Pin Symbol  
Description  
Simplified outline  
1
2
3
4
5
6
7
8
TCC_EN  
VOUT1  
GND  
temperature coefficient compensation enable  
cosine channel output  
ground  
8
5
VOUT2  
VTEMP  
GND  
sine channel output  
temperature reference output voltage  
ground  
1
4
VCC  
supply voltage  
POWERDOWN_EN Power-down mode enable  
3. Ordering information  
Table 3.  
Ordering information  
Type number Package  
Name Description  
Version  
KMZ60  
SO8  
plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
2 of 30  
 
 
 
 
 
 
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
4. Functional diagram  
V
CC  
V
CC  
TCC_EN  
FUNCTIONAL  
CONTROL  
POWERDOWN_EN  
R
1
VDDS  
BROKEN  
BOND WIRE  
DETECTION  
BUFFER  
R
2
U / I  
VDDS  
I
= f(V  
)
TC comp  
enable  
V
CC  
VIN1P  
VIN1N  
R
B
I
Vcos  
TC_comp  
CURRENT  
MULTIPLIER  
VOUT1  
VOUT2  
GAIN = 6  
GAIN = 7  
/ 2  
V
CC  
I
T
= f(T  
)
amb  
R
VIN2P  
VIN2N  
B
Vsin  
GAIN = 7  
GAIN = 6  
R
C
3
3
I
MR  
SENSOR  
PTAT  
PTAT  
REF  
I
const  
VTEMP  
TEMPERATURE  
SENSOR  
GNDS  
GND  
001aan885  
Fig 1. Functional diagram with sensor bridge  
5. Functional description  
Figure 1 shows the complete circuit consisting of the MR sensor element realized by two  
interleaved Wheatstone bridges for cosine and sine signals. Also the supporting functions  
for control circuit and signal amplification are included. A Proportional To Absolute  
Temperature (PTAT) reference current, a voltage-to-current converter and a current  
multiplier are generating the reference current which is supply voltage, temperature and  
resistor dependent. This reference current controls the supply voltage of both sensor  
bridges to compensate their TC via a supply buffer. For noise and ElectroMagnetic  
Compatibility (EMC) suppression low-pass filtering of the bridge supply is implemented.  
The bridge output voltages are amplified by a constant factor and fed to the rail-to-rail  
output buffers. The single-ended outputs are capable to drive inputs e.g. of an external  
Analog-to-Digital Converter (ADC) referenced to VCC. For an optimal use of the ADC input  
range the cosine and sine output voltages are tracking ratiometric with the supply voltage.  
To achieve good signal performance, both signals are matched in amplitude and phase.  
The amplifier bandwidth is sufficient for low phase delay at maximum specified speed of  
rotation. Pin TCC_EN is used to enable the temperature compensation. Two modes are  
defined. The TC of the MR sensor signal amplitude is largely compensated by the  
amplifier if pin TCC_EN is connected to VCC. The amplified sensor signal, which has  
a negative TC, is available at the output pins VOUT1 and VOUT2 if pin TCC_EN is  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
3 of 30  
 
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
connected to ground. Pin VTEMP delivers a temperature dependent output voltage  
O(TEMP) in both cases, which is tracking ratiometric with the supply voltage. It uses the  
V
internal PTAT reference and can be left open or connected to ground or preferably to VCC  
if not used. The pin POWERDOWN_EN input switches the device into Power-down mode  
and sets the pin VOUT1 and pin VOUT2 output to high impedance and disables  
pin VTEMP. It must be connected to ground if not used. An implemented broken bond  
wire detection for all internal connections to the MR sensor is drawing the output voltages  
V
o(VOUT1) and Vo(VOUT2) to the ground level in case of a failure. Both outputs are  
short-circuit proof.  
The integrated MR sensor element is a sensitive magnetic field sensor, employing the MR  
effect of thin film permalloy. The sensor contains two parallel supplied Wheatstone  
bridges, which enclose a sensitive angle of 45 degrees. A rotating magnetic field in the  
surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output  
signals, one following a cos(2) and the second following a sin(2) function. is the  
mechanical angle between sensor and field direction.  
The definition of the output signal amplitude Vo(VOUT1) and Vo(VOUT2) and the output offset  
voltage Voffset(VOUT1) and Voffset(VOUT2) of KMZ60 for a mechanical angle of 360 degrees is  
shown in Figure 2.  
93 %  
V
CC  
V
V
+
o(VOUT1)  
offset(VOUT1)  
(1)  
V
o(VOUT1)  
V
offset(VOUT1)  
50 %  
CC  
V
V
offset(VOUT2)  
V
o(VOUT2)  
V
V
+
o(VOUT2)  
(2)  
offset(VOUT2)  
7 %  
V
CC  
0
90  
180  
270  
360  
(deg)  
001aan886  
(1) Offset positive  
(2) Offset negative  
Fig 2. Definition of output signal amplitude and offset voltage  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
4 of 30  
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
6. Internal circuitry  
Table 4.  
Symbol  
TCC_EN  
Internal circuits for each pin  
Pin  
Equivalent circuit  
1
V
CC  
TCC_EN  
GND  
001aan719  
VOUT1  
GND  
2
V
CC  
3 and 6  
4
VOUT2  
100 Ω  
VOUT1  
GND  
GND  
V
CC  
VOUT2  
100 Ω  
GND  
001aan720  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
5 of 30  
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
Table 4.  
Symbol  
VTEMP  
Internal circuits for each pin …continued  
Pin  
Equivalent circuit  
5
V
CC  
VTEMP  
GND  
GND  
001aan723  
VCC  
7
8
V
CC  
GND  
001aan722  
POWERDOWN_EN  
V
CC  
POWERDOWN_EN  
GND  
001aan721  
7. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
VI  
Parameter  
Conditions  
Min  
0.3  
0.3  
0.3  
40  
Max  
Unit  
V
supply voltage  
input voltage  
+6  
on pins TCC_EN and POWERDOWN_EN  
on pins VOUT1, VOUT2 and VTEMP  
VCC + 0.3  
VCC + 0.3  
+160  
V
VO  
output voltage  
ambient temperature  
V
Tamb  
C  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
6 of 30  
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
8. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Operating conditions  
Parameter  
Conditions  
Min  
2.7  
Max  
5.5  
Unit  
V
supply voltage  
Tamb  
ambient temperature  
40  
+150  
C  
9. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR  
sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1  
and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.  
Symbol  
VCC  
Parameter  
Conditions  
Min  
2.7  
2.0  
Typ  
-
Max  
5.5  
Unit  
V
supply voltage  
supply current  
ICC  
under normal condition  
dependent on VCC, RL(o)ext and  
rotation frequency;  
6.0  
10.0  
mA  
no short-circuit of outputs  
Power-down mode;  
-
-
16  
A  
VCC on pin POWERDOWN_EN;  
VCC or ground on pin TCC_EN  
Ipu  
pull-up current  
pin TCC_EN to ground  
5  
-
-
-
0.3  
A  
A  
nF  
Ipd  
pull-down current  
VCC on pin POWERDOWN_EN  
0.01  
100  
3
-
[1]  
Cblock(ext)  
external blocking  
capacitance  
Rsc  
Ro  
short-circuit resistance  
output resistance  
pin TCC_EN to VCC or ground  
-
-
-
10  
on pin VOUT1, pin VOUT2 and  
pin VTEMP  
50  
150  
on pin VOUT1 and pin VOUT2;  
500  
35  
-
-
-
k  
k  
VCC on pin POWERDOWN_EN  
pin VTEMP to ground; VCC on  
pin POWERDOWN_EN  
85  
[2]  
[3]  
RL(o)ext  
CL(o)ext  
Vo  
external output load  
resistance  
on pin VOUT1 and pin VOUT2  
pin VTEMP to ground  
5
-
k  
k  
nF  
nF  
V
20  
-
100  
10  
external output load  
capacitance  
on pin VOUT1 and pin VOUT2  
on pin VTEMP  
0.5  
-
22  
33  
-
39  
output voltage  
on pin VOUT1 and pin VOUT2;  
without signal clipping;  
RL(o)ext = 5 k  
0.07VCC  
0.93VCC  
VOL  
LOW-level output voltage  
on pin VOUT1 and pin VOUT2;  
broken bond wire detected;  
RL(o)ext = 5 kto ground  
-
-
-
-
0.05VCC  
0.06VCC  
V
V
on pin VOUT1 and pin VOUT2;  
broken bond wire detected;  
RL(o)ext = 5 kto VCC  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
7 of 30  
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
Table 7.  
Characteristics …continued  
Tamb = 25 C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR  
sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1  
and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[4]  
Isc  
short-circuit current  
to ground; on pin VOUT1 and  
pin VOUT2  
6  
-
-
mA  
[4]  
[5]  
to ground; on pin VTEMP  
2  
-
-
-
mA  
mA  
to VCC; on pin VOUT1 and  
pin VOUT2  
-
6
[5]  
to VCC; on pin VTEMP  
-
-
-
2
-
mA  
nF  
CL(i)ext  
external input load  
capacitance  
on pin POWERDOWN_EN for  
ElectroMagnetic Interference  
(EMI) reason  
100  
VIL  
LOW-level input voltage  
HIGH-level input voltage  
start-up time  
on pin POWERDOWN_EN  
on pin POWERDOWN_EN  
-
-
-
-
0.6  
-
V
VIH  
VCC 0.6  
V
tstartup  
to 98 % of Vo(VOUT1) or  
Vo(VOUT2) end level after  
minimum VCC was reached  
-
110  
s  
from power-down to 98 % of  
Vo(VOUT1) or Vo(VOUT2) end level  
-
-
-
-
110  
-
s  
[6]  
[7]  
Hext  
external magnetic field  
strength  
25  
2  
kA/m  
deg  
err  
reference position angle  
error  
+2  
startup  
start-up angle error  
Tamb = 40 C; RL(o)ext = 5 k  
Tamb = 25 C; RL(o)ext = 5 k  
Tamb = 85 C; RL(o)ext = 5 k  
Tamb = 105 C; RL(o)ext = 5 k  
Tamb = 150 C; RL(o)ext = 5 k  
10  
10  
13  
14.5  
19  
-
-
-
-
-
+10  
+10  
+13  
+14.5  
+19  
deg  
deg  
deg  
deg  
deg  
Dynamic characteristics for angular accuracy calculations  
nH  
magnetic field rotational  
frequency  
0
-
25000  
r/min  
[8]  
[9]  
k
amplitude synchronism  
phase error  
98  
-
-
-
-
-
-
102  
1.5  
+0.1  
-
%
err  
deg  
deg  
dB  
V  
[10]  
  
angular inaccuracy  
within a static field  
0.1  
12  
-
PSRR  
Vn(o)(RMS)  
power supply rejection ratio fripple = 500 kHz  
[11]  
RMS output noise voltage on pin VOUT1, pin VOUT2 and  
pin VTEMP; no magnetic signal  
500  
Temperature dependency of output on pin VTEMP  
VO  
output voltage  
Tamb = 40 C  
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
0.057VCC  
0.248VCC  
0.445VCC  
0.515VCC  
0.655VCC  
-
-
-
-
-
0.147VCC  
0.351VCC  
0.559VCC  
0.631VCC  
0.786VCC  
V
V
V
V
V
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
8 of 30  
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
Table 7.  
Characteristics …continued  
Tamb = 25 C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR  
sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1  
and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Temperature dependency of signal outputs with TC compensation (VCC on pin TCC_EN)  
Vo  
output voltage  
peak-to-peak value;  
on pin VOUT1; RL(o)ext = 5 k  
Tamb = 40 C  
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
0.42VCC  
0.46VCC  
0.42VCC  
0.56VCC 0.70VCC  
0.56VCC 0.70VCC  
0.53VCC 0.70VCC  
V
V
V
V
V
0.395VCC 0.51VCC 0.695VCC  
0.35VCC  
0.48VCC 0.68VCC  
peak-to-peak value;  
on pin VOUT2; RL(o)ext = 5 k  
Tamb = 40 C  
Tamb = 25 C  
0.42VCC  
0.46VCC  
0.42VCC  
0.56VCC 0.70VCC  
0.56VCC 0.70VCC  
0.53VCC 0.70VCC  
V
V
V
V
V
Tamb = 85 C  
Tamb = 105 C  
0.395VCC 0.51VCC 0.695VCC  
Tamb = 150 C  
0.35VCC  
0.48VCC 0.68VCC  
Voffset  
offset voltage  
on pin VOUT1; RL(o)ext = 5 k  
Tamb = 40 C  
0.08VCC  
0.08VCC  
0.09VCC  
0.095VCC  
0.11VCC  
-
-
-
-
-
+0.08VCC  
+0.08VCC  
+0.09VCC  
+0.095VCC  
+0.11VCC  
V
V
V
V
V
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
on pin VOUT2; RL(o)ext = 5 k  
Tamb = 40 C  
0.08VCC  
0.08VCC  
0.09VCC  
0.095VCC  
0.11VCC  
-
-
-
-
-
+0.08VCC  
+0.08VCC  
+0.09VCC  
+0.095VCC  
+0.11VCC  
V
V
V
V
V
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
9 of 30  
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
Table 7.  
Characteristics …continued  
Tamb = 25 C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR  
sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1  
and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Temperature dependency of signal outputs without TC compensation (pin TCC_EN to ground)  
Vo  
output voltage  
peak-to-peak value;  
on pin VOUT1; RL(o)ext = 5 k  
Tamb = 40 C  
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
0.54VCC  
0.41VCC  
0.31VCC  
0.66VCC 0.76VCC  
0.49VCC 0.57VCC  
0.37VCC 0.45VCC  
V
V
V
V
V
0.275VCC 0.34VCC 0.425VCC  
0.21VCC  
0.27VCC 0.36VCC  
peak-to-peak value;  
on pin VOUT2; RL(o)ext = 5 k  
Tamb = 40 C  
Tamb = 25 C  
0.54VCC  
0.41VCC  
0.31VCC  
0.66VCC 0.76VCC  
0.49VCC 0.57VCC  
0.37VCC 0.45VCC  
V
V
V
V
V
Tamb = 85 C  
Tamb = 105 C  
0.275VCC 0.34VCC 0.425VCC  
Tamb = 150 C  
0.21VCC  
0.27VCC 0.36VCC  
Voffset  
offset voltage  
on pin VOUT1; RL(o)ext = 5 k  
Tamb = 40 C  
0.07VCC  
0.07VCC  
0.07VCC  
0.075VCC  
0.08VCC  
-
-
-
-
-
+0.07VCC  
+0.07VCC  
+0.07VCC  
+0.075VCC  
+0.08VCC  
V
V
V
V
V
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
on pin VOUT2; RL(o)ext = 5 k  
Tamb = 40 C  
0.07VCC  
0.07VCC  
0.07VCC  
0.075VCC  
0.08VCC  
-
-
-
-
-
+0.07VCC  
+0.07VCC  
+0.07VCC  
+0.075VCC  
+0.08VCC  
V
V
V
V
V
Tamb = 25 C  
Tamb = 85 C  
Tamb = 105 C  
Tamb = 150 C  
[1] Between pin VCC and pin GND, soldered close to the package.  
[2] Operating as sink or source.  
[3] Between pin VOUT1 and pin VCC or pin GND and between pin VOUT2 and pin VCC or pin GND.  
[4] Short-circuit to pin GND within a time limit of 10 minutes.  
[5] Short-circuit to pin VCC within a time limit of 10 minutes.  
[6] Induced voltage from a rotating strong magnetic field may impact the performance but without damage.  
[7] Angle error due to reference position defined by the leadframe, sample based controlled at assembly line.  
[8] By calculation of peak-to-peak amplitude relation k = 100 Vo(VOUT1) / Vo(VOUT2)  
.
[9] Rotation frequency dependent phase error, after offset correction, amplitude calibration and arctangent calculation.  
[10] Value calculated only with third and fifth harmonic of the spectrum of output signal amplitude Vo(VOUT1) and Vo(VOUT2) by ideal  
homogeneous field.  
[11] Maximum limit is valid with external first order filter of 80 kHz.  
KMZ60  
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Product data sheet  
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10 of 30  
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
10. Definitions of errors  
10.1 Reference position angle error  
The reference position angle error err is defined as absolute mounting position deviation  
of the MR sensor in a homogeneous excitation magnetic field related to the reference  
position0 defined by the leadframe. Marking position for angle0 = 0 degree and Y = 0  
position is referred parallel to the straight connection line of the 2nd and 7th package pin.  
The X = 0 position is referred to the middle distance of the package top (see Figure 3).  
Y
X
Ф
err  
Ф
0
Ф
sensor  
die  
001aan887  
Fig 3. Phase error caused by mounting tolerances  
10.2 Output amplitude matching error  
The output amplitude matching error k is defined as the relation between both output  
channel amplitudes at continuously rotating magnetic excitation of the MR sensor.  
k = 100 Vo(VOUT1) (p-p) / Vo(VOUT2) (p-p) (the angle error can be derived from Figure 4)  
KMZ60  
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Product data sheet  
Rev. 2 — 7 February 2014  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
001aan888  
0.3  
α
err  
(deg)  
0.2  
0.1  
0
98  
99  
100  
101  
102  
k (%)  
Fig 4. Angle error caused by output amplitude synchronism  
10.3 Output signal amplitude  
The peak-to-peak output signal amplitude of Vo(VOUT1) and Vo(VOUT2) is related to VCC  
Figure 5 and Figure 6 show the specified amplitude range over temperature within its  
minimum and maximum limits.  
.
001aan889  
0.8  
V
/ V  
CC  
o
(V / V)  
0.6  
0.4  
0.2  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation on  
Fig 5. Output signal peak-to-peak amplitude with pin TCC_EN connected to VCC  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
001aan890  
0.8  
/ V  
V
o
CC  
(V / V)  
0.6  
0.4  
0.2  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation off  
Fig 6. Output signal peak-to-peak amplitude with pin TCC_EN connected to ground  
10.4 TC of output signal amplitude  
The TC of the peak-to-peak output signal amplitude of Vo(VOUT1) and Vo(VOUT2) is related  
to VCC. Figure 7 and Figure 8 show the specified TC range of the amplitude over  
temperature within its minimum and maximum limits. The limits were calculated from  
single MR sensor measurements and circuit measurements.  
aaa-001506  
2
TC  
/ V  
CC  
V(o)  
(mV / V) / K  
1
0
-1  
-2  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation on  
Fig 7. TC of output signal peak-to-peak amplitude with pin TCC_EN connected to VCC  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
aaa-001507  
0
TC  
/ V  
V(o)  
CC  
(mV / V) / K  
-1  
-2  
-3  
-4  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation off  
Fig 8. TC of output signal peak-to-peak amplitude with pin TCC_EN connected to  
ground  
10.5 TC of output signal offset  
The TC of the output signal offset of Voffset(VOUT1) and Voffset(VOUT2) is related to VCC  
.
Figure 9 and Figure 10 show the specified TC range of the offset over temperature within  
its minimum and maximum limits. The limits were calculated from single MR sensor  
measurements and circuit measurements.  
aaa-001508  
0.6  
TC  
/ V  
CC  
V(offset)  
(mV / V) / K  
0.2  
-0.2  
-0.6  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation on  
Fig 9. TC of output signal offset with pin TCC_EN connected to VCC  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
aaa-001509  
0.3  
TC  
/ V  
CC  
V(offset)  
(mV / V) / K  
0.1  
-0.1  
-0.3  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation off  
Fig 10. TC of output signal offset with pin TCC_EN connected to ground  
10.6 Start-up angle error  
The start-up angle error is defined as maximum deviation by calculating the angle from  
the offset voltages Voffset(VOUT1) and Voffset(VOUT2) and the peak-to-peak signal amplitudes  
V
o(VOUT1) and Vo(VOUT2).  
Figure 11 and Figure 12 show the maximum start-up angular error related to 180 degree  
angular range of the MR sensor after one point calibration at 25 C (from worst case  
simulations).  
001aan891  
7
start-up error  
(deg)  
6
5
4
3
2
1
0
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation on  
Fig 11. Start-up angle error after calibration with pin TCC_EN connected to VCC  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
001aan892  
2.0  
start-up error  
(deg)  
1.6  
1.2  
0.8  
0.4  
0
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
TC compensation off  
Fig 12. Start-up angle error after calibration with pin TCC_EN connected to ground  
10.7 Phase error  
The phase error err is defined as a rotation frequency dependent error due to bandwidth  
limitation of the operational amplifiers. Vo(VOUT1) and Vo(VOUT2) are retarded by the device  
propagation delay, referred to the actual angle direction of the rotating magnetic field  
(see Figure 13). The typical characteristics value can be used for a 1st order  
compensation of this error on very high rotations per minute. For low rotational speed  
systems this error component is negligible.  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
φ
err  
1
(1)  
(2)  
V
/ V  
CC  
o
(V / V)  
0
-1  
0
50  
100  
150  
200  
250  
300  
350  
reference (deg)  
180  
delay  
(deg)  
120  
φ
err  
60  
0
0
50  
100  
150  
200  
250  
300  
350  
reference (deg)  
001aan893  
(1) VOUT1  
(2) VOUT2  
Fig 13. Angle error caused by amplifier bandwidth  
10.8 Temperature behavior of pin VTEMP output  
The temperature dependent VO(TEMP) reference voltage with its specified tolerances is  
shown in Figure 14. The output level is related to ground and tracking ratiometric with  
V
CC. Stability is guaranteed at the specified output load.  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
001aan894  
0.8  
V
/ V  
CC  
o(VTEMP)  
(V / V)  
0.6  
0.4  
0.2  
0
max  
min  
-40  
0
40  
80  
120  
160  
(°C)  
T
amb  
Fig 14. Temperature behavior of pin VTEMP output  
11. Electromagnetic compatibility  
11.1 Emission (IEC 61967-4)  
EMC tests carried out according to IEC 61967-4, part 4 under typical specification  
conditions at VCC = 5 V without rotational field excitation. Pin TCC_EN connected to VCC  
or ground.  
Direct coupling method: 150 , 6.8 nF, frequency band 150 kHz to 1 GHz  
Test severity limit: Class III local with level 10-K  
Test ensured on pins: VOUT1, VOUT2, VTEMP, VCC and POWERDOWN_EN related to  
ground with specified load capacitors  
11.2 Immunity (IEC 62132-4)  
EMC tests carried out according to IEC 62132-4, under typical specification conditions at  
V
CC = 3.3 V with different constant field orientations. Pin TCC_EN connected to VCC or  
ground.  
Direct power injection: 150 , 6.8 nF, frequency band 150 kHz to 1 GHz  
Test severity limit: 12 dBm  
Test ensured on pins: VOUT1, VOUT2, VTEMP, VCC and POWERDOWN_EN related to  
ground with specified load capacitors  
The mathematically calculated mechanical angular error can be derived from measured  
output signals on pin VOUT1 and pin VOUT2. It will not deviate more than 1.8 degrees  
during the EMC immunity test.  
The deviation of output voltage VO(TEMP) is less than 0.009VCC which equals with an  
additional error less than 2.5 C.  
KMZ60  
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Angle sensor with integrated amplifier  
12. ElectroStatic Discharge (ESD)  
12.1 Human body model  
The KMZ60 is protected against 4 kV, according to the human body model at 100 pF and  
1.5 k. The test is according to AEC-Q100, REV-G, method 002.  
12.2 Machine model  
The KMZ60 is protected against 400 V, according to the machine model. The test is  
according to AEC-Q100, REV-G, method 003.  
12.3 Charged-device model  
The KMZ60 is protected against 500 V of direct charge injection with the 4 pF verification  
model, according to the charged-device model. The test is according to AEC-Q100,  
REV-G, method 011.  
12.4 Latch-up protection  
The KMZ60 is latch-up protected against 110 mA at maximum ambient temperature.  
The test is according to AEC-Q100, REV-G, method 004.  
13. Application information  
The MR sensor is designed for applications with a separate Electronic Control Unit (ECU)  
containing an ADC with its references connected to the supply voltage. With the ADC  
input resolution related to VCC in the same way as the MR sensor output voltage range  
(ratiometric), the signal dependency on supply voltage changes is minimized.  
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ꢀꢀꢁDDQꢂꢃꢄ  
Fig 15. Application diagram of KMZ60 with separate ECU on Printed-Circuit Board (PCB)  
13.1 Connection to ECU  
Long connections on the PCB should be avoided due to the limited driving capability of  
both amplifier outputs. Shielding of the signal lines is recommended. The load capacitors  
and resistors should be matched for best angular accuracy.  
KMZ60  
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Product data sheet  
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Angle sensor with integrated amplifier  
In front of the ADC inputs bandwidth limitation filters should be implemented related to the  
used sampling frequency of the system to reduce the noise bandwidth (see Figure 15).  
The load resistors RL(o)ext are representing the input load of the filter application and the  
ADC.  
The ECU may be used for arctan and offset calculation, offset storage and calibration.  
13.2 EMI  
A blocking capacitor Cblock(ext) and the load capacitors CL(o)ext for the signal outputs are  
necessary to fulfill the EMI requirements. They should be soldered close to the related IC  
pins.  
To protect the output stages VOUT1 and VOUT2 an internal resistance is implemented.  
It works like a voltage divider together with the load resistance RL(o)ext  
.
Capacitor CL(o)ext is required on pin VTEMP for output stability. The pin can be soldered  
directly to ground or preferably to VCC on the PCB if it is not used.  
Capacitor CL(i)ext is required on pin POWERDOWN_EN to fulfill the EMI demands.  
The pin may be soldered directly to ground on the PCB if it is not used.  
13.3 Power consumption  
The power consumption is dependent on VCC, temperature, load resistance RL(o)ext  
,
load capacitance CL(o)ext and frequency of the rotating magnetic field. It is recommended  
to refer the load resistance RL(o)ext and the load capacitance CL(o)ext to ground although a  
connection to VCC is likewise possible. VO(TEMP) is related to ground via the external load  
resistance RL(o)ext on pin VTEMP.  
The output voltages Vo(VOUT1), Vo(VOUT2) and VO(TEMP) are protected against short-circuit  
to VCC or ground by current limitation within the given time duration.  
Placing the device 180 degrees rotated into the socket may lead to damages, if the supply  
current is not limited to 100 mA.  
13.4 TC compensation  
KMZ60 can be used as specified with TC compensation of the MR sensor signal.  
Pin TCC_EN has to be connected to VCC  
.
The pin TCC_EN has to be connected to ground if no TC compensation is required.  
The output signal amplitude will decrease with increasing temperature related to the TC of  
the MR sensor. The angle accuracy might be slightly reduced due to the limited resolution  
of the used ADC.  
13.5 Offset of signal outputs on pin VOUT1 and pin VOUT2  
The single-ended output signals are referenced to VCC / 2 generated internally on chip.  
Offsets are originated from matching inaccuracies of the production process. For a good  
accuracy matching of the external load is additionally required.  
For ESD and EMC protection the outputs are containing a series resistance.  
The influence of this series resistance is minimized with a large output load resistance.  
KMZ60  
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Product data sheet  
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Angle sensor with integrated amplifier  
13.6 Temperature reference output  
On pin VTEMP a temperature dependent reference voltage VO(TEMP) is available.  
This voltage is derived from an internal PTAT reference. For measurement with the  
proposed ADC the voltage is tracking ratiometric with VCC. The reference can be used for  
a temperature dependent offset and angular error calibration.  
The output can be left open or connected to ground or preferably to VCC if not used.  
13.7 Switching into Power-down mode  
The Power-down mode can be activated by switching pin POWERDOWN_EN to VCC  
.
Within this mode the output pin VOUT1 and pin VOUT2 are set to high impedance to  
avoid current consumption across the load resistors.  
Pin VTEMP will be drawn to the ground level via an internal resistance.  
The Power-down mode can be entered if pin TCC_EN is connected to VCC or ground.  
13.8 Circuit behavior in case of broken bond wires  
The output voltages Vo(VOUT1) and Vo(VOUT2) will be drawn to the ground level if the  
implemented broken bond wire detection for all internal connections to the MR sensor is  
activated.  
With a broken bond wire on pin TCC_EN the pad will be drawn internally to VCC  
This activates the TC compensation for both signal outputs on pin VOUT1 and  
pin VOUT2.  
.
A broken bond wire on pin VTEMP will interrupt the output signal on pin VTEMP.  
A broken bond wire on pin POWERDOWN_EN will disable the Power-down mode and  
keep the device active via an internal pull-down.  
13.9 Signal dependence on air-gap distance  
KMZ60 measures the direction of the external magnetic field within its x-y plane.  
The result is widely independent of the field strength as far as it is above the specified  
minimum value. Within a homogeneous field in x-y direction the result is independent of its  
placement in z direction (air-gap).  
The nominal z distance of the internal x-y plane to the top surface of the plastic package is  
405 m.  
14. Test information  
14.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q100 Rev-G - Failure mechanism based stress test qualification for  
integrated circuits, and is suitable for use in automotive applications.  
KMZ60  
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Product data sheet  
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Angle sensor with integrated amplifier  
15. Package information  
15.1 Sensor reference position  
Definition of angle reference related to the edges of pin 2 and pin 7 is shown in Figure 16.  
Distance of sensor plane related to plastic top of the package is shown in Figure 17.  
The nominal distance is 405 m (minimum 290 m and maximum 513 m).  
0°  
+
A
B
all leads  
all leads  
0.2  
0.5  
A
B
2° max  
pin 1  
001aan792  
Fig 16. Definition of angle reference position  
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ꢀꢀꢁDDQꢅꢀꢄ  
Fig 17. Distance between the MR top surface and the package top surface  
Distance between MR top surface and package top surface = (package top  
thickness + downset) (die thickness + glue line thickness).  
15.2 Note  
The package outline SOT96-1 (see Figure 18) allows a general wide tolerance for the  
lead frame thickness and the lead width. The actual reference for KMZ60 is:  
c = 0.203 mm 0.008 mm; bp = 0.380 mm 0.020 mm and e value does not vary  
KMZ60  
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Product data sheet  
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Angle sensor with integrated amplifier  
16. Package outline  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.05  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-18  
SOT96-1  
076E03  
MS-012  
Fig 18. Package outline SOT96-1 (SO8)  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
17. Soldering of SMD packages  
This text provides a very brief insight into a complex technology. A more in-depth account  
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow  
soldering description”.  
17.1 Introduction to soldering  
Soldering is one of the most common methods through which packages are attached to  
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both  
the mechanical and the electrical connection. There is no single soldering method that is  
ideal for all IC packages. Wave soldering is often preferred when through-hole and  
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not  
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high  
densities that come with increased miniaturization.  
17.2 Wave and reflow soldering  
Wave soldering is a joining technology in which the joints are made by solder coming from  
a standing wave of liquid solder. The wave soldering process is suitable for the following:  
• Through-hole components  
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board  
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless  
packages which have solder lands underneath the body, cannot be wave soldered. Also,  
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,  
due to an increased probability of bridging.  
The reflow soldering process involves applying solder paste to a board, followed by  
component placement and exposure to a temperature profile. Leaded packages,  
packages with solder balls, and leadless packages are all reflow solderable.  
Key characteristics in both wave and reflow soldering are:  
• Board specifications, including the board finish, solder masks and vias  
• Package footprints, including solder thieves and orientation  
• The moisture sensitivity level of the packages  
• Package placement  
• Inspection and repair  
• Lead-free soldering versus SnPb soldering  
17.3 Wave soldering  
Key characteristics in wave soldering are:  
• Process issues, such as application of adhesive and flux, clinching of leads, board  
transport, the solder wave parameters, and the time during which components are  
exposed to the wave  
• Solder bath specifications, including temperature and impurities  
KMZ60  
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Product data sheet  
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KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
17.4 Reflow soldering  
Key characteristics in reflow soldering are:  
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to  
higher minimum peak temperatures (see Figure 19) than a SnPb process, thus  
reducing the process window  
• Solder paste printing issues including smearing, release, and adjusting the process  
window for a mix of large and small components on one board  
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is  
heated to the peak temperature) and cooling down. It is imperative that the peak  
temperature is high enough for the solder to make reliable solder joints (a solder paste  
characteristic). In addition, the peak temperature must be low enough that the  
packages and/or boards are not damaged. The peak temperature of the package  
depends on package thickness and volume and is classified in accordance with  
Table 8 and 9  
Table 8.  
SnPb eutectic process (from J-STD-020D)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
350  
220  
< 2.5  
235  
220  
2.5  
220  
Table 9.  
Lead-free process (from J-STD-020D)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
260  
350 to 2000  
> 2000  
260  
< 1.6  
260  
250  
245  
1.6 to 2.5  
> 2.5  
260  
245  
250  
245  
Moisture sensitivity precautions, as indicated on the packing, must be respected at all  
times.  
Studies have shown that small packages reach higher temperatures during reflow  
soldering, see Figure 19.  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
25 of 30  
 
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
maximum peak temperature  
= MSL limit, damage level  
temperature  
minimum peak temperature  
= minimum soldering temperature  
peak  
temperature  
time  
001aac844  
MSL: Moisture Sensitivity Level  
Fig 19. Temperature profiles for large and small components  
For further information on temperature profiles, refer to Application Note AN10365  
“Surface mount reflow soldering description”.  
18. Abbreviations  
Table 10. Abbreviations  
Acronym  
ADC  
BLDC  
ECU  
EMC  
EMI  
Description  
Analog-to-Digital Converter  
BrushLess DC  
Electronic Control Unit  
ElectroMagnetic Compatibility  
ElectroMagnetic Interference  
Electronic Power Steering  
ElectroStatic Discharge  
Integrated Circuit  
EPS  
ESD  
IC  
MR  
MagnetoResistive  
PCB  
PTAT  
RoHS  
TC  
Printed-Circuit Board  
Proportional To Absolute Temperature  
Restriction of Hazardous Substances  
Temperature Coefficient  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
26 of 30  
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
19. Revision history  
Table 11. Revision history  
Document ID  
KMZ60 v.2  
Release date  
20140207  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
KMZ60 v.1  
Modifications:  
• Figure 15: update  
• Section 15.1: update of tolerances  
KMZ60 v.1  
20111122  
Product data sheet  
-
-
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
27 of 30  
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
20. Legal information  
20.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use in automotive applications — This NXP  
20.2 Definitions  
Semiconductors product has been qualified for use in automotive  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
20.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
28 of 30  
 
 
 
 
 
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
20.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
21. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
KMZ60  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Product data sheet  
Rev. 2 — 7 February 2014  
29 of 30  
 
 
KMZ60  
NXP Semiconductors  
Angle sensor with integrated amplifier  
22. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
15.2  
Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 2  
16  
Package outline. . . . . . . . . . . . . . . . . . . . . . . . 23  
17  
Soldering of SMD packages. . . . . . . . . . . . . . 24  
Introduction to soldering. . . . . . . . . . . . . . . . . 24  
Wave and reflow soldering. . . . . . . . . . . . . . . 24  
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . 24  
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . 25  
17.1  
17.2  
17.3  
17.4  
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3  
Functional description . . . . . . . . . . . . . . . . . . . 3  
Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 5  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Recommended operating conditions. . . . . . . . 7  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7  
18  
19  
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Revision history . . . . . . . . . . . . . . . . . . . . . . . 27  
20  
Legal information . . . . . . . . . . . . . . . . . . . . . . 28  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 28  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 29  
20.1  
20.2  
20.3  
20.4  
10  
Definitions of errors. . . . . . . . . . . . . . . . . . . . . 11  
Reference position angle error . . . . . . . . . . . . 11  
Output amplitude matching error . . . . . . . . . . 11  
Output signal amplitude . . . . . . . . . . . . . . . . . 12  
TC of output signal amplitude. . . . . . . . . . . . . 13  
TC of output signal offset . . . . . . . . . . . . . . . . 14  
Start-up angle error. . . . . . . . . . . . . . . . . . . . . 15  
Phase error. . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Temperature behavior of pin VTEMP output. . 17  
21  
22  
Contact information . . . . . . . . . . . . . . . . . . . . 29  
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
10.1  
10.2  
10.3  
10.4  
10.5  
10.6  
10.7  
10.8  
11  
11.1  
11.2  
Electromagnetic compatibility . . . . . . . . . . . . 18  
Emission (IEC 61967-4) . . . . . . . . . . . . . . . . . 18  
Immunity (IEC 62132-4) . . . . . . . . . . . . . . . . . 18  
12  
ElectroStatic Discharge (ESD) . . . . . . . . . . . . 19  
Human body model . . . . . . . . . . . . . . . . . . . . 19  
Machine model . . . . . . . . . . . . . . . . . . . . . . . . 19  
Charged-device model . . . . . . . . . . . . . . . . . . 19  
Latch-up protection. . . . . . . . . . . . . . . . . . . . . 19  
12.1  
12.2  
12.3  
12.4  
13  
Application information. . . . . . . . . . . . . . . . . . 19  
Connection to ECU. . . . . . . . . . . . . . . . . . . . . 19  
EMI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Power consumption . . . . . . . . . . . . . . . . . . . . 20  
TC compensation . . . . . . . . . . . . . . . . . . . . . . 20  
Offset of signal outputs on pin VOUT1 and  
13.1  
13.2  
13.3  
13.4  
13.5  
pin VOUT2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Temperature reference output . . . . . . . . . . . . 21  
Switching into Power-down mode. . . . . . . . . . 21  
Circuit behavior in case of broken bond wires 21  
Signal dependence on air-gap distance . . . . . 21  
13.6  
13.7  
13.8  
13.9  
14  
14.1  
15  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 21  
Quality information . . . . . . . . . . . . . . . . . . . . . 21  
Package information . . . . . . . . . . . . . . . . . . . . 22  
Sensor reference position. . . . . . . . . . . . . . . . 22  
15.1  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2014.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 7 February 2014  
Document identifier: KMZ60  
 

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