LBE2009S [NXP]
NPN microwave power transistors; NPN微波功率晶体管
| 型号： | LBE2009S |
| 厂家： | 
NXP |
| 描述： | NPN microwave power transistors |
| 文件： | 总16页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
1997 Mar 03
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
Philips Semiconductors
Product specification
LBE2003S;
LBE2009S; LCE2009S
NPN microwave power transistors
FEATURES
DESCRIPTION
• Diffused emitter ballasting resistors
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.The LCE2009S is a
maintenance type in a SOT442A metal ceramic capstan
package.
• Self-aligned process entirely ion implanted and gold
metallization
• Optimum temperature profile
• Excellent performance and reliability.
PINNING
APPLICATIONS
PIN
DESCRIPTION
• Common emitter class-A linear power amplifiers up
to 4 GHz.
1
2
3
4
collector
emitter
base
emitter
handbook, halfpage
handbook, halfpage
4
4
c
c
3
3
b
b
1
1
e
e
2
2
Top view
MAM329
Top view
MAM330
Marking code: LBE2003S = 407; LBE2009S = 409.
Marking code: LCE2009S = 408.
Fig.1 Simplified outline and symbol (SOT441A).
Fig.2 Simplified outline and symbol (SOT442A).
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
MODE OF
OPERATION
f
VCE
(V)
IC
(mA)
PL1
(mW)
Gpo
(dB)
Zi
(Ω)
ZL
(Ω)
TYPE NUMBER
(GHz)
LBE2003S
LBE2009S
LCE2009S
Class-A (CW) linear
2
18
30
≥200
≥10
6.2 + j30
17.5 + j7
Class-A (CW) linear
2
18
110
≥700
≥9
7.5 + j15 17.5 + j39
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
2
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
collector-base voltage
collector-emitter voltage
LBE2003S
V
VCER
RBE = 220 Ω
RBE = 100 Ω
open base
−
−
−
−
35
35
16
3
V
V
V
V
LBE2009S; LCE2009S
collector-emitter voltage
emitter-base voltage
collector current (DC)
LBE2003S
VCEO
VEBO
IC
open collector
−
−
90
mA
mA
LBE2009S; LCE2009S
total power dissipation
LBE2003S
250
Ptot
Tmb ≤ 75 °C
−
−
1.4
W
LBE2009S; LCE2009S
storage temperature
operating junction temperature
soldering temperature
3.5
W
Tstg
Tj
−65
−
+150
200
235
°C
°C
°C
Tsld
at 0.3 mm from case; t = 10 s
−
MGD989
MGD996
2
10
2
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
C
(mA)
1.5
(2)
(1)
(3)
10
1
0.5
0
1
10
15
20
40
60
100
(V)
30
−50
0
50
100
150
T
200
( C)
V
o
CE
mb
T
mb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 220 Ω.
(3) Second breakdown limit (independent of temperature).
Fig.4 Power dissipation derating as a function of
mounting-base temperature; LBE2003S.
Fig.3 DC SOAR; LBE2003S.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
3
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD991
MGD990
3
4
10
handbook, halfpage
handbook, halfpage
P
tot
I
C
(W)
(mA)
3
(3)
2
10
2
1
(1)
(2)
10
0
−50
1
10
2
10
20
40
0
50
100
150
T
200
( C)
V
(V)
CE
o
mb
T
mb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 100 Ω.
(3) Second breakdown limit (independant of temperature).
Fig.6 Power dissipation derating as a function
of mounting-base temperature;
LBE2009S, LCE2009S.
Fig.5 DC SOAR; LBE2009S, LCE2009S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tj = 75 °C; note 1
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
LBE2003S
65
36
K/W
LBE2009S; LCE2009S
K/W
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj = 75 °C; note 1
1.5
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
4
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
ICBO
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.1
UNIT
µA
collector cut-off current
collector cut-off current
LBE2003S
VCB = 20 V; IE = 0
VCB = 40 V; IE = 0
−
−
−
−
−
−
150
250
µA
µA
LBE2009S; LCE2009S
collector cut-off current
LBE2003S
ICER
VCB = 35 V; RBE = 220 Ω
VCB = 35 V; RBE = 100 Ω
VEB = 1.5 V; IC = 0
−
−
−
−
500
µA
µA
LBE2009S; LCE2009S
emitter cut-off current
LBE2003S
1000
IEBO
−
−
−
−
−
0.05
0.2
µA
µA
LBE2009S; LCE2009S
DC current gain
−
hFE
Ccb
VCE = 5 V; IC = 30 mA
VCE = 5 V; IC = 110 mA
15
15
150
150
collector-base capacitance
VCB = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
−
0.3
0.6
−
−
pF
pF
LBE2009S; LCE2009S
Cce
collector-emitter capacitance VCE = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
−
0.45
0.6
−
−
pF
pF
LBE2009S; LCE2009S
Ceb
emitter-base capacitance
VCB = 10 V; VEB = 1 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
−
1.7
3.3
−
−
pF
pF
LBE2009S; LCE2009S
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
5
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Table 1 Scattering parameters LBE2003S: VCE = 18 V; IC = 30 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 Ω;
typical values. (The figures given between brackets are values in dB).
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
500
600
0.56
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.56
0.55
0.55
0.55
0.56
0.57
0.57
0.58
0.60
0.62
0.64
0.66
0.68
0.71
0.73
0.75
0.76
0.77
0.78
0.80
0.81
0.81
0.81
0.80
0.81
0.81
0.81
0.80
−143
−154
−164
−171
−178
176
170
165
159
158
149
146
142
137
132
128
121
114
108
102
96
0.037 (−28.6)
0.040 (−28.0)
0.040 (−27.9)
0.041 (−27.7)
0.043 (−27.4)
0.045 (−26.9)
0.048 (−26.4)
0.051 (−25.9)
0.056 (−25.1)
0.060 (−24.5)
0.062 (−24.2)
0.065 (−23.8)
0.068 (−23.3)
0.070 (−23.1)
0.072 (−22.9)
0.074 (−22.7)
0.081 (−21.8)
0.091 (−20.8)
0.099 (−20.1)
0.105 (−19.6)
0.108 (−19.4)
0.124 (−18.7)
0.125 (−18.0)
0.137 (−17.3)
0.142 (−17.0)
0.149 (−16.6)
0.155 (−16.2)
0.167 (−15.5)
0.177 (−15.0)
0.187 (−14.6)
0.194 (−14.3)
0.203 (−13.8)
0.219 (−13.2)
0.229 (−12.8)
0.243 (−12.3)
0.245 (−12.2)
41
39
40
40
41
40
40
41
41
41
40
42
42
41
40
40
39
37
36
33
31
29
27
25
23
20
17
15
12
10
6
9.50 (19.6)
8.28 (18.4)
7.13 (17.1)
6.35 (16.1)
5.69 (15.1
5.14 (14.2
4.72 (13.5
4.37 (12.8
4.05 (12.2
3.76 (11.5
3.52 (10.9
3.33 (10.5
3.15 (10.0
2.96 (9.4)
2.80 (8.9)
2.66 (8.5)
2.43 (7.7)
2.24 (7.0)
2.08 (6.4)
1.90 (5.6)
1.79 (5.1)
1.63 (4.3)
1.58 (4.0)
1.46 (3.3)
1.40 (2.9)
1.31 (2.3)
1.25 (1.9)
1.20 (1.6)
1.14 (1.1)
1.10 (0.8)
1.04 (0.4)
1.03 (0.3)
0.98 (−0.2)
0.97 (−0.3)
0.92 (−0.7)
0.90 (−0.9)
101
93
0.56
0.51
0.50
0.49
0.47
0.46
0.46
0.45
0.44
0.45
0.43
0.43
0.43
0.43
0.43
0.42
0.41
0.40
0.39
0.38
0.39
0.37
0.40
0.39
0.38
0.38
0.38
0.39
0.39
0.42
0.44
0.47
0.48
0.49
0.51
0.55
−34
−35
700
88
−36
800
82
−37
900
77
−38
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
72
−39
68
−39
64
−41
60
−44
57
−46
53
−48
50
−50
46
−53
42
−54
39
−56
36
−57
28
−61
23
−67
16
−75
10
−82
4
−87
92
−2
−94
89
−7
−101
−112
−120
−128
−133
−142
−151
−159
−165
−169
−175
−178
−171
−165
86
−13
−18
−24
−28
−34
−38
−43
−47
−53
−57
−62
−68
−72
82
79
75
73
69
68
65
60
4
56
−1
−3
−8
−12
51
48
44
1997 Mar 03
6
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Table 2 Scattering parameters LBE2009S; LCE2009S: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 °C;
Zo = 50 Ω; typical values. (The figures given between brackets are values in dB).
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
0.70
0.70
0.70
0.70
0.71
0.71
0.71
0.71
0.71
0.72
0.72
0.72
0.72
0.73
0.73
0.74
0.75
0.77
0.79
0.80
0.81
0.83
0.85
0.86
0.87
0.88
0.88
0.89
0.90
0.90
0.90
(deg)
177
171
168
163
159
155
151
148
144
143
136
133
130
127
123
120
114
108
103
97
(ratio)
(deg)
50
51
53
54
54
55
54
54
53
54
52
53
51
49
48
46
43
40
37
33
30
26
24
20
17
14
11
8
(ratio)
(deg)
83
(ratio)
0.25
0.22
0.23
0.22
0.22
0.21
0.21
0.21
0.20
0.20
0.21
0.21
0.22
0.22
0.22
0.22
0.22
0.21
0.24
0.25
0.27
0.28
0.30
0.34
0.37
0.41
0.42
0.45
0.48
0.52
0.55
(deg)
−48
−50
−52
−54
−56
−59
−62
−65
−74
−79
−80
−83
−87
−90
−94
−97
−109
−122
−133
−143
−151
−163
−173
178
173
168
162
155
149
145
144
500
600
0.029 (−30.7)
0.033 (−29.6)
0.036 (−29.0)
0.039 (−28.4)
0.041 (−27.8)
0.045 (−27.0)
0.049 (−26.2)
0.054 (−25.4)
0.060 (−24.5)
0.066 (−23.6)
0.070 (−23.1)
0.075 (−22.5)
0.080 (−21.9)
0.084 (−21.5)
0.087 (−21.2)
0.090 (−20.9)
0.100 (−20.0)
0.112 (−19.0)
0.123 (−18.2)
0.129 (−17.8)
0.134 (−17.5)
0.143 (−16.9)
0.152 (−16.4)
0.163 (−15.8)
0.168 (−15.5)
0.175 (−15.2)
0.180 (−14.9)
0.193 (−14.3)
0.200 (−14.0)
0.211 (−13.5)
0.214 (−13.4)
7.55 (17.6)
6.43 (16.2)
5.46 (14.6)
4.80 (13.6)
4.27 (12.6)
3.84 (11.7)
3.53 (11.0)
3.27 (10.3)
3.01 (9.6)
2.80 (9.0)
2.61 (8.3)
2.47 (7.9)
2.33 (7.3)
2.18 (6.8)
2.05 (6.3)
1.97 (5.9)
1.78 (5.0)
1.63 (4.3)
1.51 (3.6)
1.36 (2.7)
1.28 (2.1)
1.15 (1.2)
1.10 (0.9)
1.00 (0)
77
700
73
800
68
900
64
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
60
56
52
48
45
41
38
34
30
26
23
15
10
2
−4
92
−11
−17
−21
−28
−32
−39
−42
−48
−51
−56
−59
88
85
82
79
0.96 (−0.4)
0.88 (−1.1)
0.83 (−1.6)
0.79 (−2.1)
0.74 (−2.6)
0.71 (−3.0)
0.66 (−3.6)
75
71
69
66
5
64
2
61
−2
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
7
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
APPLICATION INFORMATION
Microwave performance for LBE2003S up to Tmb = 25 °C in a common emitter class-A test circuit; note 1.
f
VCE
(V) (2)
IC
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(Ω)
ZL
(Ω)
MODE OF OPERATION
(GHz)
(mA) (2)
Class-A (CW)
2
18
30
≥200 (23)
≥10
6.2 + j30
17.5 + j7
typ. 250 (24)
typ. 11
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
66.5
2.5
3
2
12.5
1.2
6
12.5
21
3
2 2
7
10.5
5
10.5
2
6
2
1
2
5
input
output
0.5
3.5
C
C
14.5
MCD635
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.7 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
8
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD992
MGD993
300
10
handbook, halfpage
handbook, halfpage
P
L
(mW)
typ
S
(dB)
12
P
(1)
L1
200
typ
5
100
0
0
0
0
10
20
30
20
40
60
80
I
(mA)
P (mW)
C
i
f = 2 GHz; Tmb = 25 °C.
CE = 18 V; IC = 30 mA.
(1) Gpo = 11 dB.
V
Class-A operation.
f = 2 GHz; Tmb = 25 °C; VCE = 18 V.
Fig.8 Load power as a function of input power.
Fig.9 s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
9
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Microwave performance for LBE2009S; LCE2009S up to Tmb = 75 °C in a common emitter class-A test circuit; note 1.
f
VCE
(V) (2)
IC
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(Ω)
ZL
(Ω)
MODE OF OPERATION
(GHz)
(mA) (2)
Class-A (CW)
2
18
110
≥700 (28.5)
≥9
7.5 + j14.5 17.5 + j38.5
typ. 900 (29.5)
typ. 9.8
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
1.2
26.4
0.8
12.4
13
25
2
2
input
VSWR < 3.5
= 50 Ω
output
VSWR < 3
2
2
Z
Z
= 50 Ω
o
o
5.2
6.8
MGD999
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.10 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
10
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
MGD995
MGD994
8
1
handbook, halfpage
handbook, halfpage
P
(1)
S
(dB)
L1
12
typ
P
L
(W)
4
0.5
0
0
0
0
50
100
150
50
100
150
I
(mA)
P (mW)
C
i
f = 2 GHz; Tmb = 25 °C.
Class-A operation.
VCE = 18 V; IC = 110 mA.
f = 2 GHz; Tmb = 25 °C; VCE = 18 V.
(1)
Gpo = 9.8 dB.
Fig.11 Load power as a function of input power.
Fig.12 s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
11
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
PACKAGE OUTLINES
Studless ceramic package; 4 leads
SOT441A
D
AI O
2
3
A
Q
c
BeO
D
1
seating plane
b
α
4
L
3
b
1
1
L
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
L
min.
UNIT
b
b
c
D
D
Q
α
1
1
3.38
3.08
5.28
5.12
1.3
1.0
mm
2.4
3.2
0.75
0.125
6
90°
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT441A
1997 Mar 03
12
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
Studded ceramic package; 4 leads
SOT442A
D
2
D
A
Q
c
D
1
N
1
M
W
seating plane
N
2
N
X
N
3
M
1
detail X
b
α
4
L
3
b
1
1
L
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
N
N
1
N
L
min.
3
UNIT
b
b
c
D
D
D
M
M
N
2
Q
W
α
1
1
2
1
max.
max. max.
min
1.6
1.4
3.38
3.08
5.25
5.10
5.28
5.12
8.5
7.5
2.80
2.50
8-32
UNC
3.27
3.01
mm
90°
12.5 1.6
2.9
4.0
3.2
0.75
0.125
6
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT442A
1997 Mar 03
13
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 03
14
Philips Semiconductors
Product specification
LBE2003S; LBE2009S;
LCE2009S
NPN microwave power transistors
NOTES
1997 Mar 03
15
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© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
127147/00/02/pp16
Date of release: 1997 Mar 03
Document order number: 9397 750 01864
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