LLE18150X [NXP]
NPN silicon planar epitaxial microwave power transistor; NPN硅平面外延微波功率晶体管
| 型号： | LLE18150X |
| 厂家： | 
NXP |
| 描述： | NPN silicon planar epitaxial microwave power transistor |
| 文件： | 总9页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18150X
NPN silicon planar epitaxial
microwave power transistor
September 1994
Product specification
File under Discrete Semiconductors, SC15
Philips Semiconductors
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
FEATURES
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
amplifier.
MODE OF
OPERATION (GHz) (V)
f
VCE
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
• Interdigitated structure provides
high emitter efficiency
Class AB (CW) 1.85
24
0.05
≥12
≥7.8 typ. 43 see Figs 6
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
and 7
PINNING - FO-229
PIN
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
DESCRIPTION
1
2
3
collector
base
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
emitter connected to flange
APPLICATION
handbook, 4 columns
1
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2.0 GHz.
c
b
3
e
DESCRIPTION
2
MAM112
Top view
NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1994
2
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX. UNIT
−
45
30
22
3
V
VCER
VCEO
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
input power
RBE = 220 Ω
open base
−
V
−
V
open collector
−
V
−
3
A
Pi
f = 1.85 GHz; VCE = 24 V; class AB
−
4
W
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
soldering temperature
Tmb = 75 °C
−
25
−65
−
+150 °C
200
235
°C
°C
Tsld
t ≤ 10 s; note 1
−
Note
1. Up to 0.2 mm from ceramic.
MBD741
30
P
tot
(W)
20
10
0
0
50
100
150
200
o
( C)
T
mb
Fig.2 Power derating curve.
September 1994
3
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to mounting base Tj = 100 °C
thermal resistance from mounting base to heatsink
CONDITIONS
MAX.
3.6
UNIT
K/W
0.2
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
collector-emitter breakdown voltage IC = 0 mA; RBE = 220 Ω
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 20 V
−
1.5
−
mA
V
V(BR)CER
V(BR)CBO
V(BR)EBO
hFE
30
45
3
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
IC = 10 mA
−
V
IE = 10 mA
−
V
IC = 0.5 A; VCE = 3 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi; ZL
(Ω)
(GHz)
Class AB (CW)
1.85
24
0.05
≥12
typ. 15
≥7.8
typ. 8.5
typ. 43
see Figs 6
and 7
September 1994
4
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
30
30
2.0 6.0 2.5
3.0 2.5 7.0
2.5
1.0
4.0
7.0
8.0
5.0
3.0
40
40
3.0
6.0
4.0
6.0
13.0
0.7
17.0
0.7
1.0
1.0
4.0
2.0
9.0
2.5
MBD731
V
V
CC
BB
C5
F1
C6
L1
input
output
L2
C1
C4
C3
C2
MBD732
The test circuit is split into two independent halves, each being 30 x 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Prematching test circuit board.
5
September 1994
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
PREMATCHING TEST
CIRCUIT
BIAS CIRCUIT
V
CC
R1
R2
C6
TR1
C5
F1
L2
P1
R3
C7
D1
D2
L1
DUT
MEA600
Fig.4 Class AB bias circuit.
List of components (see Figs 3 and 4).
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
C1, C4
C2, C3
C5, C6
C7
transistor, BDT91 or equivalent
DC blocking chip capacitor
trimmer capacitor
100 pF
ATC 100A101kp
Tekelec 727-1
Erie 1250-003
0.5 to 5.0 pF
1500 pF
feedthrough bypass capacitor
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; note 1
diode BY239 or equivalent; note 2
D2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
R1
R2
R3
F1
linear potentiometer
resistor
4.7 kΩ
100 Ω, 0.25 W
10 kΩ, 0.25 W
56 Ω, 0.25 W
resistor
resistor
ferrite bead
Philips tube, 12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
September 1994
6
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
Input and optimum load impedances.
CE = 24 V; ICQ = 50 mA; Zo = 10 Ω (see Figs 6 and 7);
V
typical values at PL = PL1.
MBD737
20
f
Zi
(Ω)
ZL
(Ω)
P
L
(W)
(GHz)
I
= 20 mA
50 mA
100 mA
CQ
16
1.70
1.80
1.85
1.90
2.00
4.5 + j8.0
7.5 + j9.0
9.2 + j8.2
9.5 + j6.5
7.0 + j3.0
6.2 − j0.5
5.7 − j1.0
4.7 − j1.7
3.9 − j2.2
2.7 − j2.4
12
8
4
0
0
1
2
3
4
(W)
P
i
VCE = 24 V; f = 1850 MHz.
Fig.5 Load power as a function of input power.
September 1994
7
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
1
0.5
2
1.7 GHz
0.2
5
Z
i
1.85 GHz
2
2 GHz
10
+ j
0.2
0.5
5
10
0
∞
– j
10
5
0.2
2
0.5
MBD742
1
VCE = 24 V; Zo = 10 Ω; ICQ = 50 mA.
Fig.6 Input impedance as a function of frequency; typical values at PL = PL1
1
0.5
2
Z
0.2
5
L
10
+ j
– j
0.2
0.5
2
5
10
0
∞
1.7 GHz
1.85 GHz
10
2 GHz
5
0.2
2
0.5
MBD743
1
VCE = 24 V; Zo = 10 Ω; ICQ = 50 mA.
Fig.7 Optimum load impedance as a function of frequency; typical values at PL = PL1.
September 1994
8
Philips Semiconductors
Product specification
NPN silicon planar epitaxial
microwave power transistor
LLE18150X
PACKAGE OUTLINE
19.1 max
6.5
max
0.13
max
1.7
max
4.8
2.3
2.0
max
seating
plane
14.22
1
0.25
M
4.5 min
6.5
6.2
O 3.3
3
4.5 min
2
MBB945
1.7 max
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Fig.8 FO-229.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1994
9
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