MB2543BB [NXP]

Dual octal latched transceivers with dual enable 3-State; 双八进制锁存收发器,双能三态
MB2543BB
型号: MB2543BB
厂家: NXP    NXP
描述:

Dual octal latched transceivers with dual enable 3-State
双八进制锁存收发器,双能三态

文件: 总13页 (文件大小:150K)
中文:  中文翻译
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Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
FEATURES  
power dissipation with high speed and high  
output drive.  
Two 8-bit octal transceivers with D-type  
Output capability: +64mA/–32mA  
latch  
Latch-up protection exceeds 500mA per  
The MB2543 dual octal registered transceiver  
contains two sets of D-type latches for  
temporary storage of data flowing in either  
direction. Separate Latch Enable (nLEAB,  
nLEBA) and Output Enable (nOEAB,  
nOEBA) inputs are provided for each  
register to permit independent control of data  
transfer in either direction. The outputs are  
guaranteed to sink 64mA.  
Live insertation/extraction permitted  
Power-up 3-State  
Jedec JC40.2 Std 17  
ESD protection exceeds 2000V per MIL  
STD 883 Method 3015 and 200V per  
Machine Model  
Power-up reset  
Multiple V and GND pins minimize  
CC  
switching noise  
DESCRIPTION  
The MB2543 high-performance BiCMOS  
device combines low static and dynamic  
Back-to-back registers for storage  
Separate controls for data flow in each  
direction  
QUICK REFERENCE DATA  
CONDITIONS  
= 25°C; GND = 0V  
SYMBOL  
PARAMETER  
TYPICAL  
UNIT  
T
amb  
t
t
Propagation delay  
nAx to nBx  
PLH  
PHL  
C = 50pF; V = 5V  
3.3  
ns  
L
CC  
C
Input capacitance  
I/O capacitance  
V = 0V or V  
CC  
4
7
pF  
pF  
µA  
IN  
I
C
V
O
= 0V or V  
3-State  
I/O  
CC;  
I
Total supply current  
Outputs disabled; V = 5.5V  
120  
CCZ  
CC  
ORDERING INFORMATION  
PACKAGES  
TEMPERATURE RANGE  
ORDER CODE  
DRAWING NUMBER  
52-pin plastic Quad Flat Pack  
–40°C to +85°C  
MB2543BB  
1418B  
PIN CONFIGURATION  
LOGIC SYMBOL  
50 51  
1
2
3
5
6
7
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7  
1EAB  
52 51 50 49 48 47 46 45 44 43 42 41 40  
49  
44  
48  
45  
1EBA  
1OEAB  
1OEBA  
47  
46  
1
1A2  
1A3  
1A4  
GND  
1A5  
1A6  
1A7  
2A0  
2A1  
39 1B2  
1LEAB  
1LEBA  
2
3
4
38  
37  
36  
1B3  
1B4  
1B5  
1B6  
1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7  
5
6
35  
42 41 39 38 37 36 35 34  
34 1B7  
MB2543  
52-pin PQFP  
2B0  
2B1  
2B2  
33  
32  
7
8
8
9
10 11 12 13 15 16  
9
31  
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7  
2EAB  
2A2 10  
30 GND  
11  
12  
29  
28  
2A3  
2A4  
2A5  
2B3  
2B4  
2B5  
18  
23  
19  
22  
2EBA  
2OEAB  
2OEBA  
20  
21  
2LEAB  
2LEBA  
13  
27  
14 15 16 17 18 19 20 21 22 23 24 25 26  
2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7  
33 32 31 29 28 27 25 24  
1
August 23, 1993  
853–1656 10584  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
LOGIC DIAGRAM  
DETAIL A  
nB0  
D
Q
LE  
nA0  
Q
D
LE  
nA1  
nA2  
nA3  
nA4  
nA5  
nA6  
nA7  
nB1  
nB2  
nB3  
nB4  
nB5  
nB6  
nB7  
DETAIL A X 7  
nOEBA  
nOEAB  
nEBA  
nEAB  
nLEBA  
nLEAB  
LOGIC SYMBOL (IEEE/IEC)  
47  
49  
48  
46  
44  
45  
20  
18  
19  
21  
23  
22  
&
&
EN1(AB)  
EN2(BA)  
EN1(AB)  
EN2(BA)  
&
&
&
&
&
&
50  
51  
1
42  
41  
39  
38  
37  
36  
35  
34  
8
9
33  
32  
31  
29  
28  
27  
25  
24  
1
2
1
2
10  
11  
12  
13  
15  
16  
2
3
5
6
7
2
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
A subsequent Low-to-High transition of the  
buffers are active and display the data  
present at the outputs of the A latches.  
FUNCTIONAL DESCRIPTION  
nLEAB signal puts the A data into the latches  
where it is stored and the B outputs no longer  
change with the A inputs. With EAB and  
nOEAB both Low, the 3-State B output  
The MB2543 contains two sets of eight  
D-type latches, with separate control pins for  
each set. Using data flow from A to B as an  
example, when the A-to-B Enable (nEAB)  
input and the A-to-B Latch Enable (nLEAB)  
input are Low the A-to-B path is transparent.  
Control of data flow from B to A is similar, but  
using the nEBA, nLEBA, and nOEBA inputs.  
PIN DESCRIPTION  
PIN NUMBER  
SYMBOL  
NAME AND FUNCTION  
50, 51, 1, 2, 3, 5, 6, 7,  
8, 9, 10, 11, 12, 13, 15, 16  
1A0 – 1A7,  
2A0 – 2A7  
Data inputs/outputs  
42, 41, 39, 38, 37, 36, 35, 34,  
33, 32, 31, 29, 28, 27, 25, 24  
1B0 – 1B7,  
2B0 – 2B7  
Data inputs/outputs  
1OEAB, 1OEBA,  
2OEAB, 2OEBA  
47, 46, 20, 21  
49, 44, 18, 23  
48, 45, 19, 22  
A to B / B to A Output Enable inputs (active-Low)  
A to B / B to A Enable inputs (active-Low)  
1EAB, 1EBA,  
2EAB, 2EBA  
1LEAB, 1LEBA,  
2LEAB, 2LEBA  
A to B / B to A Latch Enable inputs (active-Low)  
4, 17, 30, 43  
14, 26, 40, 52  
GND  
Ground (0V)  
V
CC  
Positive supply voltage  
FUNCTION TABLE  
INPUTS  
OUTPUTS  
STATUS  
nOEXX  
nEXX  
nLEXX  
nAx or nBx  
nBx or nAx  
H
X
X
H
X
X
X
X
Z
Z
Disabled  
Disabled  
L
L
L
L
h
l
Z
Z
Disabled + Latch  
Latch + Display  
L
L
L
L
h
l
H
L
L
L
L
L
L
L
H
L
H
L
Transparent  
Hold  
L
L
H
X
NC  
H
h
L
l
X
=
=
=
=
=
=
High voltage level  
High voltage level one set-up time prior to the Low-to-High transition of nLEXX or nEXX (XX = AB or BA)  
Low voltage level  
Low voltage level one set-up time prior to the Low-to-High transition of nLEXX or nEXX (XX = AB or BA)  
Don’t care  
Low-to-High transition of nLEXX or nEXX (XX = AB or BA)  
NC= No change  
High impedance or “off” state  
Z
=
3
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
1 , 2  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
RATING  
–0.5 to +7.0  
–18  
UNIT  
V
V
CC  
I
IK  
DC input diode current  
V < 0  
I
mA  
V
3
V
I
DC input voltage  
–1.2 to +7.0  
–50  
I
DC output diode current  
V
O
< 0  
mA  
V
OK  
3
V
DC output voltage  
output in Off or High state  
output in Low state  
–0.5 to +5.5  
128  
OUT  
OUT  
I
DC output current  
mA  
°C  
T
stg  
Storage temperature range  
–65 to 150  
NOTES:  
1 . Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the  
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability.  
2 . The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.  
3 . The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
LIMITS  
UNIT  
Min  
4.5  
0
Max  
V
DC supply voltage  
5.5  
V
V
CC  
V
Input voltage  
V
CC  
I
V
High-level input voltage  
Low-level Input voltage  
High-level output current  
Low-level output current  
Input transition rise or fall rate  
2.0  
V
IH  
V
0.8  
–32  
64  
V
IL  
I
mA  
mA  
ns/V  
°C  
OH  
I
OL  
t/v  
0
10  
T
amb  
Operating free-air temperature range  
–40  
+85  
4
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
DC ELECTRICAL CHARACTERISTICS  
LIMITS  
T
= –40°C  
to +85°C  
amb  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
T
amb  
= +25°C  
UNIT  
MIN  
TYP  
MAX  
MIN  
MAX  
V
Input clamp voltage  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 4.5V; I = –18mA  
–0.9  
2.9  
–1.2  
–1.2  
V
V
V
V
V
V
IK  
IK  
= 4.5V; I = –3mA; V = V or V  
2.5  
3.0  
2.0  
2.5  
3.0  
2.0  
OH  
I
IL  
IH  
V
OH  
High-level output voltage  
Low-level output voltage  
= 5.0V; I = –3mA; V = V or V  
3.4  
OH  
I
IL  
IH  
= 4.5V; I = –32mA; V = V or V  
IH  
2.4  
OH  
I
IL  
V
OL  
= 4.5V; I = 64mA; V = V or V  
IH  
0.42  
0.13  
0.55  
0.55  
0.55  
0.55  
OL  
I
IL  
3
V
RST  
Power-up output voltage  
= 5.5V; I = 1mA; V = GND or V  
O I CC  
I
I
Input leakage Control pins  
V
V
= 5.5V; V = GND or 5.5V  
±0.01  
±5  
±1.0  
±1.0  
µA  
µA  
CC  
I
current  
Data pins  
= 5.5V; V = GND or 5.5V  
±100  
±100  
CC  
I
I
Power-off leakage current  
Power-up/down 3-State  
V
= 0.0V; V or V 4.5V  
±5.0  
±5.0  
±100  
±50  
±100  
±50  
µA  
µA  
OFF  
CC  
O
I
V
CC  
V
OE  
= 2.1V; V = 0.5V; V = GND or V  
;
O
I
CC  
I
PU/PD  
4
output current  
= Don’t care  
I
+ I  
+ I  
3-State output High current  
3-State output Low current  
Output High leakage current  
V
V
V
V
V
V
V
= 5.5V; V = 2.7V; V = V or V  
5.0  
–5.0  
5.0  
50  
–50  
50  
50  
–50  
50  
µA  
µA  
µA  
mA  
µA  
mA  
IH  
OZH  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
O
I
IL  
IH  
I
= 5.5V; V = 0.5V; V = V or V  
O I IL  
IL  
OZL  
IH  
I
= 5.5V; V = 5.5V; V = GND or V  
O I  
CEX  
CC  
1
I
O
Output current  
= 5.5V; V = 2.5V  
–50  
–100  
120  
38  
–180  
250  
60  
–50  
–180  
250  
60  
O
I
= 5.5V; Outputs High, V = GND or V  
CCH  
I
CC  
I
Quiescent supply current  
= 5.5V; Outputs Low, V = GND or V  
CCL  
I
CC  
= 5.5V; Outputs 3-State;  
I
120  
0.5  
250  
1.5  
250  
1.5  
µA  
CCZ  
V = GND or V  
I
CC  
Additional supply current per  
V
CC  
= 5.5V; one input at 3.4V,  
I  
CC  
mA  
2
input pin  
other inputs at V or GND  
CC  
NOTES:  
1 . Not more than one output should be tested at a time, and the duration of the test should not exceed one second.  
2 . This is the increase in supply current for each input at 3.4V.  
3 . For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.  
4 . This parameter is valid for any V between 0V and 2.1V, with a transition time of up to 10msec. From V = 2.1V to V = 5V ± 10% a  
CC  
CC  
CC  
transition time of up to 100µsec is permitted.  
5
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
AC CHARACTERISTICS  
GND = 0V, t = t = 2.5ns, C = 50pF, R = 500Ω  
R
F
L
L
LIMITS  
MAX  
T
= -40 to  
+85 C  
= +5.0V ±0.5V  
amb  
o
T
V
= +25 C  
amb  
CC  
o
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0V  
V
CC  
MIN  
TYP  
MIN  
MAX  
t
t
Propagation delay  
nAx to nBx, nBx to nAx  
1.5  
1.6  
3.2  
3.3  
4.6  
4.6  
1.5  
1.6  
5.2  
5.2  
PLH  
PHL  
2
ns  
ns  
ns  
ns  
ns  
ns  
t
t
Propagation delay  
LEBA to nAx, LEAB to nBx  
1.9  
2.1  
3.9  
4.1  
5.3  
5.5  
1.9  
2.1  
6.1  
6.2  
PLH  
PHL  
1, 2  
t
Output enable time  
OEBA to nAx, OEAB to nBx  
4
5
1.6  
2.3  
3.6  
4.5  
5.0  
5.9  
1.6  
2.3  
5.8  
6.6  
PZH  
t
PZL  
t
Output disable time  
OEBA to nAx, OEAB to nBx  
4
5
1.0  
1.4  
3.6  
3.2  
5.0  
4.6  
1.0  
1.4  
5.7  
5.2  
PHZ  
t
PLZ  
t
Output enable time  
EBA to nAx, EAB to nBx  
4
5
1.6  
2.3  
3.6  
4.5  
5.0  
5.9  
1.6  
2.3  
5.8  
6.6  
PZH  
t
PZL  
t
Output disable time  
EBA to nAx, EAB to nBx  
4
5
1.0  
1.4  
3.6  
3.2  
5.0  
4.6  
1.0  
1.4  
5.7  
5.2  
PHZ  
t
PLZ  
AC SETUP REQUIREMENTS  
GND = 0V, t = t = 2.5ns, C = 50pF, R = 500Ω  
R
F
L
L
LIMITS  
o
o
T
V
= +25 C  
T
V
= -40 to +85 C  
amb  
CC  
amb  
CC  
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0V  
= +5.0V ±0.5V  
MIN  
TYP  
MIN  
t (H)  
t (L)  
s
Setup time  
nAx to LEAB, nBx to LEBA  
1.0  
0.5  
0.4  
–0.1  
1.0  
0.5  
s
3
3
3
ns  
ns  
ns  
t (H)  
Hold time  
nAx to LEAB, nBx to LEBA  
1.0  
0.5  
0.2  
–0.3  
1.0  
0.5  
h
t (L)  
h
t (H)  
Setup time  
nAx to EAB, nBx to EBA  
1.0  
0.5  
0.2  
–0.3  
1.0  
0.5  
s
t (L)  
s
t (H)  
t (L)  
h
Hold time  
nAx to EAB, nBx to EBA  
1.0  
0.5  
0.3  
–0.2  
1.0  
0.5  
h
3
3
ns  
ns  
t (L)  
w
Latch enable pulse width, Low  
4.0  
3.1  
4.0  
6
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
AC WAVEFORMS  
V
M
= 1.5V, V = GND to 3.0V  
IN  
V
V
IN  
IN  
V
V
V
V
M
M
t
M
M
t
t
t
PHL  
PLH  
PLH  
PHL  
V
V
OUT  
OUT  
V
V
V
V
M
M
M
M
Waveform 1. Propagation Delay For Inverting Output  
Waveform 2. Propagation Delay For Non-Inverting  
Output  
nAx, nBx  
V
V
V
V
M
M
M
M
t (H)  
s
t (L)  
s
t
(H)  
t (L)  
h
h
nLEAB, nLEBA,  
nEAB, nEBA  
V
V
M
M
t
(L)  
w
Waveform 3. Data Setup and Hold Times and  
Latch Enable Pulse Width  
nOEAB, nOEBA,  
nEAB, nEBA  
nOEAB, nOEBA,  
nEAB, nEBA  
V
V
V
V
M
M
t
M
M
t
t
t
PLZ  
PZH  
PHZ  
PZL  
V
–0.3V  
0V  
OH  
V
V
M
nAx, nBx  
nAx, nBx  
M
V
+0.3V  
0V  
OL  
Waveform 4. 3-State Output Enable Time to High Level  
and Output Disable Time from High Level  
Waveform 5. 3-State Output Enable Time to Low Level  
and Output Disable Time from Low Level  
NOTE: The shaded areas indicate when the input is permitted to change for predictable output performance.  
7
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
TEST CIRCUIT AND WAVEFORMS  
V
t
W
AMP (V)  
90%  
CC  
90%  
7.0V  
NEGATIVE  
PULSE  
V
V
M
M
10%  
10%  
90%  
V
V
OUT  
R
R
IN  
L
L
0V  
PULSE  
GENERATOR  
D.U.T  
t
t
(t  
(t  
)
t
t
(t )  
R
THL  
F
TLH  
)
(t )  
F
R
C
TLH  
R
THL  
T
L
AMP (V)  
90%  
M
POSITIVE  
PULSE  
V
V
M
Test Circuit for 3-State Outputs  
10%  
10%  
t
W
0V  
SWITCH POSITION  
V
= 1.5V  
M
TEST  
SWITCH  
closed  
closed  
open  
Input Pulse Definition  
t
t
PLZ  
PZL  
All other  
INPUT PULSE REQUIREMENTS  
DEFINITIONS  
R = Load resistor; see AC CHARACTERISTICS for value.  
L
FAMILY  
Amplitude  
Rep. Rate  
t
t
t
F
W
R
C = Load capacitance includes jig and probe capacitance;  
L
MB  
3.0V  
1MHz  
500ns 2.5ns 2.5ns  
see AC CHARACTERISTICS for value.  
R = Termination resistance should be equal to Z  
T
of  
OUT  
pulse generators.  
8
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
t
vs Temperature (T  
)
Adjustment of t  
for  
PLH  
amb  
PLH  
C = 50pF, 1 Output Switching  
nAx to nBx or nBx to nAx  
Load Capacitance and # of Outputs Switching  
nAx to nBx or nBx to nAx  
L
7
6
5
4
3
2
1
0
6
5
4
16 switching  
8 switching  
1 switching  
MAX  
4.5V  
3
2
CC  
1
5.5V  
CC  
MIN  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
amb  
Adjustment of t  
for  
PHL  
PHL  
C = 50pF, 1 Output Switching  
nAx to nBx or nBx to nAx  
Load Capacitance and # of Outputs Switching  
nAx to nBx or nBx to nAx  
5
L
7
6
5
4
3
2
1
0
4
3
MAX  
4.5V  
16 switching  
8 switching  
CC  
1 switching  
2
5.5V  
CC  
1
0
MIN  
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t  
for  
PLH  
amb  
PLH  
C = 50pF, 1 Output Switching  
L
Load Capacitance and # of Outputs Switching  
nLEBA to nAx or nLEAB to nBx  
nLEBA to nAx or nLEAB to nBx  
7
6
5
4
3
2
1
6
5
4
MAX  
4.5V  
16 switching  
8 switching  
1 switching  
3
CC  
2
5.5V  
MIN  
CC  
1
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
9
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
t
vs Temperature (T  
)
Adjustment of t  
for  
PHL  
amb  
PHL  
C = 50pF, 1 Output Switching  
nLEBA to nAx or nLEAB to nBx  
Load Capacitance and # of Outputs Switching  
nLEBA to nAx or nLEAB to nBx  
L
8
7
6
5
4
3
2
1
5
4
3
16 switching  
8 switching  
MAX  
4.5V  
1 switching  
2
CC  
1
5.5V  
MIN  
CC  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t for  
PZH  
PZH  
amb  
C = 50pF, 1 Output Switching  
nOEBA to nAx or nOEAB to nBx  
Load Capacitance and # of Outputs Switching  
nOEBA to nAx or nOEAB to nBx  
L
7
6
5
4
3
2
1
5
16 switching  
8 switching  
4
3
MAX  
4.5V  
1 switching  
2
CC  
1
5.5V  
MIN  
CC  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t for  
PZL  
PZL  
amb  
C = 50pF, 1 Output Switching  
nOEBA to nAx or nOEAB to nBx  
Load Capacitance and # of Outputs Switching  
nOEBA to nAx or nOEAB to nBx  
L
8
7
6
5
4
3
2
1
5
4
3
16 switching  
8 switching  
MAX  
4.5V  
1 switching  
2
CC  
1
5.5V  
MIN  
CC  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
10  
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
t
vs Temperature (T  
)
Adjustment of t  
for  
PHZ  
amb  
PHZ  
C = 50pF, 1 Output Switching  
nOEBA to nAx or nOEAB to nBx  
Load Capacitance and # of Outputs Switching  
nOEBA to nAx or nOEAB to nBx  
L
7
6
5
4
3
2
1
0
11  
16 switching  
8 switching  
1 switching  
10  
9
8
7
6
5
4
3
2
1
0
–1  
–2  
–3  
–4  
MAX  
4.5V  
CC  
5.5V  
CC  
MIN  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t  
for  
PLZ  
amb  
PLZ  
C = 50pF, 1 Output Switching  
L
Load Capacitance and # of Outputs Switching  
nOEBA to nAx or nOEAB to nBx  
nOEBA to nAx or nOEAB to nBx  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
16 switching  
8 switching  
1 switching  
MAX  
4.5V  
CC  
5.5V  
CC  
MIN  
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t for  
PZH  
PZH  
amb  
C = 50pF, 1 Output Switching  
L
Load Capacitance and # of Outputs Switching  
nEBA to nAx or nEAB to nBx  
nEBA to nAx or nEAB to nBx  
7
6
5
4
3
2
1
0
5
4
3
2
1
0
16 switching  
8 switching  
MAX  
4.5V  
1 switching  
CC  
5.5V  
MIN  
CC  
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
11  
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
t
vs Temperature (T  
)
Adjustment of t  
for  
PZL  
amb  
PZL  
C = 50pF, 1 Output Switching  
nEBA to nAx or nEAB to nBx  
Load Capacitance and # of Outputs Switching  
nEBA to nAx or nEAB to nBx  
L
8
7
6
5
4
3
2
1
5
4
3
MAX  
4.5V  
16 switching  
8 switching  
1 switching  
2
CC  
1
5.5V  
MIN  
CC  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t for  
PHZ  
PHZ  
amb  
C = 50pF, 1 Output Switching  
nEBA to nAx or nEAB to nBx  
Load Capacitance and # of Outputs Switching  
nEBA to nAx or nEAB to nBx  
L
7
6
5
4
3
2
1
0
12  
16 switching  
8 switching  
1 switching  
10  
8
MAX  
4.5V  
6
4
CC  
5.5V  
CC  
2
0
MIN  
–2  
–4  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t for  
PLZ  
PLZ  
amb  
C = 50pF, 1 Output Switching  
nEBA to nAx or nEAB to nBx  
Load Capacitance and # of Outputs Switching  
nEBA to nAx or nEAB to nBx  
L
7
6
5
4
3
2
1
0
7
6
5
16 switching  
8 switching  
1 switching  
MAX  
4.5V  
4
3
CC  
5.5V  
2
CC  
1
MIN  
0
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
12  
August 23, 1993  
Philips Semiconductors Advanced BiCMOS Products  
Product specification  
Dual octal latched transceivers with dual enable  
(3-State)  
MB2543  
t
vs Temperature (T  
)
Adjustment of t  
for  
TLH  
amb  
TLH  
C = 50pF, 1 Output Switching  
L
Load Capacitance/# of Outputs  
4
3
2
1
0
11  
9
16 switching  
8 switching  
1 switching  
7
4.5V  
5.5V  
CC  
CC  
5
3
1
–1  
–3  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
t
vs Temperature (T  
)
Adjustment of t  
for  
THL  
amb  
THL  
C = 50pF, 1 Output Switching  
L
Load Capacitance and # of Outputs Switching  
4
3
2
1
0
6
5
4
3
2
1
0
16 switching  
8 switching  
1 switching  
4.5V  
5.5V  
CC  
CC  
–1  
–2  
–55 –35 –15  
5
25  
45  
65  
85  
105 125  
0
50  
100  
150  
200  
°C  
pF  
V
OHV  
and V  
vs Load Capacitance  
V
OHP  
and V  
vs Load Capacitance  
OLP  
OLV  
V
CC  
= 5V, V = 0 to 3V  
V = 5V, V = 0 to 3V  
CC IN  
IN  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
6
5
4
125°C  
25°C  
–55°C  
125°C  
25°C  
–55°C  
3
2
1
0
125°C  
25°C  
–55°C  
–1  
–2  
–3  
125°C  
25°C  
–55°C  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
pF  
pF  
13  
August 23, 1993  

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