MC13770FCR2 [NXP]

IC,DOWNCONVERTER,BICMOS,LLCC,12PIN,PLASTIC;
MC13770FCR2
型号: MC13770FCR2
厂家: NXP    NXP
描述:

IC,DOWNCONVERTER,BICMOS,LLCC,12PIN,PLASTIC

信息通信管理
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MC13770/D  
Rev. 2, 11/2003  
Freescale Semiconductor  
Technical Data  
MC13770  
(Scale 2:1)  
Package Information  
Plastic Package  
Case 1345  
MC13770  
Single Band LNA and Mixer FEIC  
(QFN-12)  
Ordering Information  
Device  
Device Marking  
Package  
MC13770FC  
770  
QFN-12  
Contents  
1 Introduction  
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2 Electrical Specifications . . . . . . . . . . . . . . . . 2  
3 Contact Description . . . . . . . . . . . . . . . . . . . . 4  
4 Applications Information. . . . . . . . . . . . . . . . 4  
5 Packaging Information. . . . . . . . . . . . . . . . . . 7  
The MC13770 is a single band front-end IC designed for  
wireless receiver applications. It contains a low noise  
LNA and a high linearity mixer. The LNA is integrated  
with a bypass switch to preserve input intercept  
performance. The device is fabricated using Freescale's  
Advanced RF BiCMOS process using the SiGe:C option  
and is packaged in a 12 pin Quad Flat Non-leaded  
package.  
1.1  
Features  
RF Input Frequency: 2100 to 2400 MHz  
LNA Gain = 15 dB (Typ)  
LNA Input 3rd Order Intercept Point (IIP3) =  
0 dBm (Typ)  
LNA Noise Figure (NF) = 1.5 dB (Typ)  
Bypass Mode Included for Improved Intercept  
Point Performance  
Double Balanced Mixer  
Mixer Conversion Gain = 10 dB (Typ)  
Mixer Noise Figure (NF) = 8.0 dB (Typ)  
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its  
products.  
© Freescale Semiconductor, Inc., 2003, 2005. All rights reserved.  
 
Electrical Specifications  
Mixer Input 3rd Order Intercept Point (IIP3) = -3.0 dBm (Typ)  
Total Supply Current = 8.0 mA  
LNA = 3.0 mA  
Mixer = 5.0 mA  
LNA Out  
Mix In  
LO In+ LO In-  
IF+  
IF-  
LNA In  
Bypass  
Enable  
Mix Bias  
Figure 1. Simplified Block Diagram  
2 Electrical Specifications  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Supply Voltage  
VCC  
Tstg  
TA  
3.6  
V
Storage Temperature Range  
Operating Temperature Range  
Note: Maximum Ratings and ESD  
-65 to 150  
-40 to 85  
°C  
°C  
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be  
restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section.  
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 100 V and Machine Model (MM) 30 V.  
Additional ESD data available upon request.  
Table 2. Recommended Operating Conditions  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Supply Voltage  
2.7  
2.75  
3.0  
Vdc  
V
Logic Voltage (Enable and Bypass Pins)  
Input High Voltage  
0.85 VCC  
0
-
-
VCC  
Input Low Voltage  
0.15 VCC  
MC13770 Technical Data, Rev. 2  
2
Freescale Semiconductor  
Electrical Specifications  
Table 3. Electrical Characteristics  
Symbol Min  
Characteristic  
Typ  
Max  
Unit  
Turn-on Time  
-
100  
-
ns  
LNA High Gain Mode (Frequency = 2140 MHz, VCC = 2.75 V, Bypass = 2.75 V, Enable = 2.75 V)  
LNA Gain  
-
-
-
-
15  
1.5  
0
-
-
-
-
dB  
dB  
LNA Noise Figure  
LNA Input IP3  
LNA Supply Current  
dBm  
mA  
IDD  
3.0  
LNA Low Gain Mode (RF = 2140 MHz, VCC = 2.75 V, Bypass = 0 V, Enable = 2.75 V)  
LNA Gain  
-
-
-
-
-5.0  
5.0  
20  
-
-
-
-
dB  
dB  
LNA Noise Figure  
LNA Input IP3  
LNA Supply Current  
dBm  
µA  
IDD  
10  
Mixer Mode (RF = 2140 MHz, LO = 2520 MHz, VCC = 2.75 Vdc, Enable = 2.75 V)  
Conversion Gain  
-
-
-
-
-
10  
8.0  
-3.0  
5.0  
-10  
-
-
-
-
-
dB  
dB  
SSB Noise Figure  
Input IP3  
dBm  
mA  
Supply Current  
LO Drive Level  
dBm  
Note: Tone spacing for IIP3 measurement is 5.0 MHz.  
Table 4. Truth Table  
(1 = 2.75 V, 0 = 0 V)  
Enable  
Bypass  
Mode  
0
0
1
1
0
Sleep  
1
0
1
Undefined - do not use  
Low Gain  
High Gain  
MC13770 Technical Data, Rev. 2  
Freescale Semiconductor  
3
Contact Description  
3 Contact Description  
Table 5. Contact Function Description  
Pin  
Symbol  
LNA Out  
Description  
1
2
LNA Output  
Bypass  
Mix In  
Enable  
LO+  
LNA Bypass Control  
Mixer Input  
3
4
Chip Enable  
5
Local Oscillator Input +  
Local Oscillator Input -  
Differential IF Output +  
Differential IF Output -  
Supply  
6
LO-  
7
IF+  
8
IF-  
9
VCC  
10  
11  
12  
LNA In  
Gnd  
LNA Input  
Ground  
Mix Bias  
Mixer Bias Adjustment  
4 Applications Information  
Figure 2 shows the typical application circuit for 2110 to 2140 MHz band. The Mixer input is internally  
broadband matched. Two typical IF output match circuits are provided in Table 6 on page 5.  
MC13770 Technical Data, Rev. 2  
4
Freescale Semiconductor  
Applications Information  
VCC1  
C1 33 pF  
LNA In  
C12  
0.5 pF  
L2  
2.7 nH  
C9  
0.01 µF  
R1  
4.3 k  
C7  
33 pF  
12  
11  
10  
C2 33 pF  
L3 *  
C8 0.01 µF  
L4 *  
L1  
2.7 nH  
R2  
470 Ω  
1
2
3
9
8
7
LNA Out  
VCC2  
C11 1.0 pF  
Mini-Circuits  
TC8-1 Transformer  
8:1  
Bypass  
Mix In  
C3 *  
C10 *  
IF  
C4 *  
4
5
6
* See Table 6 for values.  
C6  
33 pF  
C5  
33 pF  
Enable  
LO+  
Figure 2. Application Schematic  
Table 6. Bill of Material for Application Schematic  
Component  
190 MHz IF  
380 MHz IF  
C3  
C4  
C10  
L3  
1.2 pF  
1.2 pF  
1.2 pF  
150 nH  
150 nH  
5.0 kΩ  
2.2 pF  
2.2 pF  
1.2 pF  
39 nH  
39 nH  
20 kΩ  
L4  
R3  
Note: All other components are the same for both configurations.  
MC13770 Technical Data, Rev. 2  
Freescale Semiconductor  
5
 
Applications Information  
L
N
A
Serial  
No#  
GND  
I
N
1
LNAout  
IF  
VCC2  
MIX in  
ENABLE  
GND  
MC13770EVK  
V2  
LO-  
LO+  
Figure 3. Application PCB (Not to Scale)  
MC13770 Technical Data, Rev. 2  
6
Freescale Semiconductor  
Packaging Information  
5 Packaging Information  
LASER MARK FOR PIN 1  
IDENTIFICATION IN  
THIS AREA  
3
A
M
2X  
0.1  
C
G
0.1  
C
1.0 1.00  
0.8 0.75  
0.05  
C
5
3
(0.24)  
0.05  
0.00  
(0.5)  
SEATING PLANE  
C
2X  
DETAIL G  
VIEW ROTATED 90° CLOCKWISE  
M
0.1  
C
B
0.1 C A B  
1.25  
0.95  
DETAIL M  
PIN 1 IDENTIFIER  
M
M
0.1  
C A B  
C
10  
12  
EXPOSED DIE  
ATTACH PAD  
0.05  
8X (1.177)  
4X (45°)  
12X  
0.3  
0.18  
9
7
1
3
1.25  
0.065  
0.015  
3X (R0.09)  
4X (0.18)  
0.1 C A B  
12X  
0.95  
DETAIL N  
CORNER CONFIGURATION  
N
6
4
12X  
0.75  
0.5  
4
8X  
0.5  
VIEW M-M  
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 1994.  
DETAIL S  
(90°)  
3. THE COMPLETE JEDEC DESIGNATOR FOR THIS  
PACKAGE IS: HF-PQFP-N.  
4. CORNER CHAMFER MAY NOT BE PRESENT.  
DIMENSIONS OF OPTIONAL FEATURES ARE FOR  
REFERENCE ONLY.  
5. COPLANARITY APPLIES TO LEADS, CORNER LEADS,  
AND DIE ATTACH PAD.  
4X  
(0.25)  
0.39  
0.31  
2X  
8X  
(0.777)  
2X 0.1  
0.0  
DETAIL S  
PIN 1 BACKSIDE IDENTIFIER  
DETAIL M  
PIN 1 BACKSIDE IDENTIFIER  
Figure 4. Outline Dimensions for QFN-12  
(Case 1345-01, Issue A)  
MC13770 Technical Data, Rev. 2  
Freescale Semiconductor  
7
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RoHS-compliant and/or Pb- free versions of Freescale products have the functionality  
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free  
counterparts. For further information, see http://www.freescale.com or contact your  
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© Freescale Semiconductor, Inc., 2003, 2005. All rights reserved.  
LDCForFreescaleSemiconductor@hibbertgroup.com  
MC13770/D  
Rev. 2  
11/2003  

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