MC33886VW [NXP]
STEPPER MOTOR CONTROLLER, PDSO20, 16 X 11 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, HSOP-20;
| 型号： | MC33886VW |
| 厂家： | 
NXP |
| 描述： | STEPPER MOTOR CONTROLLER, PDSO20, 16 X 11 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, HSOP-20 电动机控制 光电二极管 |
| 文件： | 总28页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MC33886
Rev 10.0, 01/2014
Freescale Semiconductor
Technical Data
5.0 A H-Bridge
33886
The 33886 is a monolithic H-Bridge ideal for fractional horsepower
DC-motor and bi-directional thrust solenoid control. The IC
incorporates internal control logic, charge pump, gate drive, and low
RDS(ON) MOSFET output circuitry. The 33886 is able to control
continuous inductive DC load currents up to 5.0 A. Output loads can
be pulse width modulated (PWM-ed) at frequencies up to 10 kHz.
H-BRIDGE
A Fault Status output reports undervoltage, short-circuit, and
overtemperature conditions. Two independent inputs control the two
half-bridge totem-pole outputs. Two disable inputs force the H-Bridge
outputs to tri-state (exhibit high-impedance).
The 33886 is parametrically specified over a temperature range of
-40 C TA 125 C, 5.0 V V+ 28 V. The IC can also be operated
up to 40 V with derating of the specifications. The IC is available in a
surface mount power package with exposed pad for heatsinking. This
device is powered by SMARTMOS technology.
VW SUFFIX (PB-FREE)
98ASH70702A
Features
20-PIN HSOP
• 5.0 V to 40 V continuous operation
• 120 m RDS(on) H-Bridge MOSFETs
• TTL/CMOS compatible Inputs
• PWM frequencies up to 10 kHz
• Active current limiting via internal constant off-time PWM (with
temperature-dependent threshold reduction)
• Output short-circuit protection
• Undervoltage shutdown
Applications
• Automotive systems
• DC motor control in industrial and robotic systems
• DC motor and actuator control in boats, RVs, and
marine systems
• Appliance and white goods electrical actuators
• Powered machine and hand tools
• Antenna rotors and dish positioning systems
• Fault status reporting
V+
5.0 V
33886
CCP
FS
V+
OUT1
IN
MCU
Motor
OUT
OUT
OUT
OUT
IN1
IN2
D1
OUT2
PGND
GND
D2
Figure 1. 33886 Simplified Application Diagram
© Freescale Semiconductor, Inc., 2007 - 2014. All rights reserved.
1
Orderable Parts
Table 1. Orderable Part Variations
Temperature (T )
Part Number
Package
A
MC33886PVW/R2
-40 to 125 °C
20 HSOP
33886
Analog Integrated Circuit Device Data
2
Freescale Semiconductor
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
V+
CCP
Charge
Pump
Current Limit,
Short-circuit
5.0 V
Regulator
80 A
(each)
Sense Circuit
OUT1
OUT2
IN1
IN2
Gate Drive
D1
D2
Over
temperature
Control
Logic
5A
Undervoltage
FS
AGND
PGND
Figure 2. 33886 Simplified Internal Block Diagram
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Analog Integrated Circuit Device Data
Freescale Semiconductor
3
PIN CONNECTIONS
PIN CONNECTIONS
AGND
FS
DNC
IN2
1
20
2
19
18
17
16
15
14
13
12
11
IN1
D1
3
V+
4
CCP
V+
V+
5
OUT1
OUT1
DNC
PGND
PGND
OUT2
OUT2
D2
6
7
8
9
PGND
PGND
10
Figure 3. 33886 Pin Connections
Table 2. 33886 Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 16.
Pin Number
Pin Name
AGND
FS
Formal Name
Definition
Low-current analog signal ground.
1
2
Analog Ground
Open drain active Low Fault Status output requiring a pull-up resistor to 5.0 V.
Fault Status for H-
Bridge
True logic input control of OUT1 (i.e., IN1 logic High = OUT1 logic High).
Positive supply connections.
3
IN1
V+
Logic Input Control 1
Positive Power Supply
H-Bridge Output 1
Do Not Connect
4, 5, 16
6, 7
Output 1 of H-Bridge.
OUT1
DNC
Either do not connect (leave floating) or connect these pins to ground in the application.
They are test mode pins used in manufacturing only.
8, 20
Device high-current power ground.
9–12
13
PGND
D2
Power Ground
Disable 2
Active Low input used to simultaneously tri-state disable both H-Bridge outputs. When
D2 is logic Low, both outputs are tri-stated.
Output 2 of H-Bridge.
14, 15
17
OUT2
CCP
D1
H-Bridge Output 2
Charge Pump Capacitor
Disable 1
External reservoir capacitor connection for internal charge pump capacitor.
Active High input used to simultaneously tri-state disable both H-Bridge outputs. When
D1 is logic High, both outputs are tri-stated.
18
True logic input control of OUT2 (i.e., IN2 logic High = OUT2 logic High).
19
IN2
Logic Input Control 2
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Analog Integrated Circuit Device Data
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Rating
Symbol
Value
Unit
Supply Voltage
V+
40
-0.1 to 7.0
7.0
V
V
V
A
V
Input Voltage (1)
V
IN
FS Status Output (2)
Continuous Current (3)
V
FS
I
5.0
OUT
ESD Voltage for VW Package
Human Body Model (4)
Machine Model (5)
V
V
ESD1
ESD2
±2000
±200
Storage Temperature
T
-65 to 150
-40 to 125
-40 to 150
Note 7.
C
C
STG
Ambient Operating Temperature (6)
T
A
Operating Junction Temperature
T
C
J
Peak Package Reflow Temperature During Reflow (7)
,
TPPRT
(8)
°C
Approximate Junction-to-Board Thermal Resistance (and Package
Dissipation = 6.0 W) (9)
C/W
R
~5.0
JB
Notes
1. Exceeding the input voltage on IN1, IN2, D1, or D2 may cause a malfunction or permanent damage to the device.
2. Exceeding the pull-up resistor voltage on the open drain FS pin may cause permanent damage to the device.
3. Continuous current capability so long as junction temperature is 150C.
4. ESD1 testing is performed in accordance with the Human Body Model (C
= 100 pF, R
= 1500 ).
ZAP
ZAP
5. ESD2 testing is performed in accordance with the Machine Model (C
= 200 pF, R
= 0 ).
ZAP
ZAP
6. The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heatsinking.
7. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
8. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
9. Exposed heatsink pad plus the power and ground pins comprise the main heat conduction paths. The actual RJB (junction-to-PC board)
values will vary depending on solder thickness and composition and copper trace.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions 5.0 V V+ 28 V and -40C TA 125C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER SUPPLY
Operating Voltage Range (10)
Standby Supply Current
V+
5.0
–
–
–
40
20
V
I
mA
Q(standby)
V
= 5.0 V, I
= 0 A
OUT
EN
Threshold Supply Voltage
Switch-OFF
V+
4.15
4.5
4.4
4.75
–
4.65
5.0
–
V
V
(THRES-OFF)
Switch-ON
V+
(THRES-ON)
Hysteresis
V+
150
mV
(HYS)
CHARGE PUMP
Charge Pump Voltage
V+ = 5.0 V
V
- V+
V
V
CP
3.35
–
–
–
–
8.0 V V+ 40 V
20
CONTROL INPUTS
Input Voltage (IN1, IN2, D1, D2)
Threshold High
V
3.5
–
–
–
–
1.4
–
IH
Threshold Low
V
IL
Hysteresis
V
0.7
1.0
HYS
Input Current (IN1, IN2, D1) (11)
I
A
A
IN
V
= 0 V
-200
–
-80
25
–
IN
D2 Input Current (12)
I
D2
V
= 5.0 V
100
D2
Notes
10. Specifications are characterized over the range of 5.0 V V+ 28 V. Operation >28 V will cause some parameters to exceed listed
min/max values. Refer to typical operating curves to extrapolate values for operation >28 V but 40 V.
11. Inputs IN1, IN2, and D1 have independent internal pull-up current sources.
12. The D2 input incorporates an active internal pull-down current sink.
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Analog Integrated Circuit Device Data
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions 5.0 V V+ 28 V and -40C TA 125C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
POWER OUTPUTS (OUT1, OUT2)
Symbol
Min
Typ
Max
Unit
Output-ON Resistance (13)
R
m
DS(ON)
5.0 V V+ 28 V, T = 25 °C
–
–
–
120
–
–
J
8.0 V V+ 28 V, T = 150 °C
225
300
J
–
5.0 V V+ 8.0 V, T = 150 °C
J
Active Current Limiting Threshold (via Internal Constant OFF-Time
PWM) (14)
A
I
LIM
5.2
11
6.5
–
7.8
–
High Side Short-circuit Detection Threshold
Low Side Short-circuit Detection Threshold
Leakage Current (15)
A
A
I
SCH
I
8.0
–
–
SCL
OUT(LEAK)
I
A
V
V
= V+
–
–
100
30
200
60
OUT
OUT
= GND
Output FET Body Diode Forward Voltage Drop (16)
= 3.0 A
V
V
F
I
–
–
2.0
OUT
Switch-OFF
Thermal Shutdown
°C
T
175
–
–
–
–
LIM
Hysteresis
T
15
HYS
FAULT STATUS (17)
Fault Status Leakage Current (18)
I
A
FS(LEAK)
V
= 5.0 V
–
–
–
–
10
FS
Fault Status Set Voltage (19)
= 300 A
V
V
FS(LOW)
I
1.0
FS
Notes
13. Output-ON resistance as measured from output to V+ and ground.
14. Product with date codes of December 2002, week 51, will exhibit the values indicated in this table. Product with earlier date codes may
exhibit a minimum of 6.0 A and a maximum of 8.5 A.
15. Outputs switched OFF with D1 or D2.
16. Parameter is guaranteed by design but not production tested.
17. Fault Status output is an open drain output requiring a pull-up resistor to 5.0 V.
18. Fault Status Leakage Current is measured with Fault Status High and not set.
19. Fault Status Set Voltage is measured with Fault Status Low and set with I = 300 A.
FS
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Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 5.0 V V+ 28 V and -40C TA 125 C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
TIMING CHARACTERISTICS
PWM Frequency (20)
fPWM
fMAX
–
–
–
–
10
20
kHz
kHz
s
Maximum Switching Frequency During Active Current Limiting (21)
Output ON Delay (22)
V+ = 14 V
t
d(ON)
–
–
–
–
18
18
Output OFF Delay (22)
V+ = 14 V
tD(OFF)
s
s
Output Rise and Fall Time (23)
tF, tR
V+ = 14 V, I
= 3.0 A
2.0
5.0
8.0
OUT
Output Latch-OFF Time
s
s
ns
s
s
ms
tA
tB
15
12
100
–
20.5
16.5
–
26
21
–
Output Blanking Time
Output FET Body Diode Reverse Recovery Time (24)
Disable Delay Time (25)
t
RR
tD(DISABLE)
tFAULT
tPOD
–
8.0
–
Short-circuit/Overtemperature Turn-OFF Time (26)
Power-OFF Delay Time
–
4.0
1.0
–
5.0
Notes
20. The outputs can be PWM controlled from an external source. This is typically done by holding one input high while applying a PWM
pulse train to the other input. The maximum PWM frequency obtainable is a compromise between switching losses and switching
frequency. Refer to Typical Switching Waveforms, Figures 10 through 17, pp. 11–12.
21. The Maximum Switching Frequency during active current limiting is internally implemented. The internal control produces a constant
OFF-time PWM of the output. The output load current effects the Maximum Switching Frequency.
22. Output Delay is the time duration from the midpoint of the IN1 or IN2 input signal to the 10% or 90% point (dependent on the transition
direction) of the OUT1 or OUT2 signal. If the output is transitioning High-to-Low, the delay is from the midpoint of the input signal to the
90% point of the output response signal. If the output is transitioning Low-to-High, the delay is from the midpoint of the input signal to
the 10% point of the output response signal. See Figure 4, page 9.
23. Rise Time is from the 10% to the 90% level and Fall Time is from the 90% to the 10% level of the output signal. See Figure 6, page 9.
24. Parameter is guaranteed by design but not production tested.
25. Disable Delay Time is the time duration from the midpoint of the D (disable) input signal to 10% of the output tri-state response. See
Figure 5, page 9.
26. Increasing currents will become limited at I . Hard shorts will breach the I
or I
limit, forcing the output into an immediate tri-
SCL
LIM
SCH
state latch-OFF. See Figures 8 and 9, page 10. Active current limiting will cause junction temperatures to rise. A junction temperature
above 160 C will cause the active current limiting to progressively “fold-back” (or decrease) to 2.5 A typical at 175 C where thermal
latch-OFF will occur. See Figure 7, page 9.
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Analog Integrated Circuit Device Data
8
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TIMING DIAGRAMS
5.0
50%
50%
0
td(OFF)
td(ON)
90%
VPWR
10%
0
TIME
Figure 4. Output Delay Time
5.0 V
0 V
0
Figure 5. Disable Delay Time
VPWR
tf
tr
90%
90%
10%
10%
0
Figure 6. Output Switching Time
6.5
2.5
Thermal Shutdown
160
175
T , JUNCTION TEMPERATURE (oC)
J
Figure 7. Active Current Limiting Versus Temperature (Typical)
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Analog Integrated Circuit Device Data
Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Load Capacitance and/or
Diode Reverse Recovery Spikes
I
Short-circuit Detect Threshold
SCL
8.0
6.5
for Low-Side FETs
Typical Current Limiting Threshold
Active
Current
Hard Short Detect and Latch-Off
Limiting
(
(See Figure 7)
0
IN1 or IN2
IN2 or IN1
[1]
IN1 or IN2
IN2 or IN1
IN1 IN2
[0]
[1]
[0]
[1]
[0]
[1]
[0]
Outputs
Outputs Operational
(per Input Control Condition)
Outputs
Tri-stated
Tri-stated
TIME
Figure 8. Active Current Limiting Versus Time
I Short-circuit Detect Threshold
SCL
8.0
t
= Output Latch-OFF Time
a
ta
tb
t = Output Blanking Time
b
6.5
Typical Current
Limiting Waveform
Hard Short Detect
Latch-off Prevented During t
b
TIME
Figure 9. Active Current Limiting Detail
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
TYPICAL SWITCHING WAVEFORMS
Important For all plots, the following applies:
• Ch2=2.0 A per division
• LLOAD=533 H @ 1.0 kHz
• LLOAD=530 H @ 10.0 kHz
• RLOAD=4.0
Output Voltage
(OUT1)
IOUT
Output Voltage
(OUT1)
Input Voltage
(IN1)
V+=34 V
fPWM=1.0 kHz Duty Cycle=90%
IOUT
Figure 12. Output Voltage and Current vs. Input Voltage
at V+ = 34 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 90%, Showing Device in
Current Limiting Mode
Input Voltage
(IN1)
V+=24 V
fPWM=1.0 kHz Duty Cycle=10%
Figure 10. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 10%
Output Voltage
(OUT1)
I
OUT
Output Voltage
(OUT1)
Input Voltage
(IN1)
I
V+=22 V
f
=1.0 kHz Duty Cycle=90%
OUT
PWM
Input Voltage
(IN1)
Figure 13. Output Voltage and Current vs. Input Voltage
at V+ = 22 V, PMW Frequency of 1.0 kHz,
V+=24 V
f
=1.0 kHz Duty Cycle=50%
PWM
and Duty Cycle of 90%
Figure 11. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 50%
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
Output Voltage
(OUT1)
Output Voltage
(OUT1)
I
OUT
I
OUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=12 V
f
=20 kHz
Duty Cycle=50%
V+=24 V
f
=10 kHz
Duty Cycle=50%
PWM
PWM
Figure 14. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 10 kHz,
Figure 16. Output Voltage and Current vs. Input Voltage
at V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 50%
and Duty Cycle of 50% for a Purely Resistive Load
Output Voltage
(OUT1)
Output Voltage
(OUT1)
I
OUT
I
OUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=12 V
f
=20 kHz
Duty Cycle=90%
V+=24 V
f
=10 kHz
Duty Cycle=90%
PWM
PWM
Figure 15. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 10 kHz,
Figure 17. Output Voltage and Current vs. Input Voltage
at V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 90%
and Duty Cycle of 90% for a Purely Resistive Load
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Analog Integrated Circuit Device Data
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
Table 6. Truth Table
The tri-state conditions and the fault status are reset using D1 or D2. The truth table uses the following notations: L = Low,
H = High, X = High or Low, and Z = High-impedance (all output power transistors are switched off).
Fault Status
Input Conditions
Output States
Flag
FS
H
H
H
H
L
Device State
D1
L
D2
H
H
H
H
X
L
IN1
H
L
IN2
L
OUT1
OUT2
Forward
Reverse
H
L
L
H
L
L
H
L
Freewheeling Low
Freewheeling High
Disable 1 (D1)
L
L
L
L
H
X
X
Z
H
X
X
X
Z
H
Z
Z
H
X
Z
Z
Z
Z
Z
H
Z
Z
X
H
Z
Z
Z
Z
Z
H
X
L
Disable 2 (D2)
L
IN1 Disconnected
IN2 Disconnected
D1 Disconnected
D2 Disconnected
Undervoltage (27)
Overtemperature (28)
Short Circuit (28)
Notes
H
H
X
Z
H
H
L
L
X
X
X
X
X
X
Z
X
X
X
X
X
X
X
X
X
L
X
X
X
L
L
L
27. In the case of an undervoltage condition, the outputs tri-state and the fault status is set logic Low. Upon undervoltage recovery, fault
status is reset automatically or automatically cleared and the outputs are restored to their original operating condition.
28. When a short-circuit or overtemperature condition is detected, the power outputs are tri-state latched-OFF independent of the input
signals and the fault status flag is set logic Low.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
13
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
ELECTRICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
Figure 18. Typical High Side RDS(ON) Versus V+
0.13
0.128
0.126
0.124
0.122
0.12
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
Figure 19. Typical Low Side RDS(ON) Versus V+
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Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
Figure 20. Typical Quiescent Supply Current Versus V+
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Freescale Semiconductor
15
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
Numerous protection and operational features (speed,
torque, direction, dynamic braking, and PWM control), in
addition to the 5.0 A current capability, make the 33886 a
very attractive, cost-effective solution for controlling a broad
range of fractional horsepower DC motors. A pair of 33886
devices can be used to control bipolar stepper motors in both
directions. In addition, the 33886 can be used to control
permanent magnet solenoids in a push-pull variable force
fashion using PWM control. The 33886 can also be used to
excite transformer primary windings with a switched square
wave to produce secondary winding AC currents.
external pull-up resistor is required for the open drain FS pin
for fault status reporting.
Two independent inputs (IN1 and IN2) provide control of the
two totem-pole half-bridge outputs. Two disable inputs (D1
and D2) are for forcing the H-Bridge outputs to a high-
impedance state (all H-Bridge switches OFF).
The 33886 has undervoltage shutdown with automatic
recovery, active current limiting, output short-circuit latch-
OFF, and overtemperature latch-OFF. An undervoltage
shutdown, output short-circuit latch-OFF, or overtemperature
latch-OFF fault condition will cause the outputs to turn OFF
(i.e., become high-impedance or tri-stated) and the fault
output flag to be set Low. Either of the Disable inputs or V+
must be “toggled” to clear the fault flag.
As shown in Figure 2, Simplified Internal Block Diagram,
page 3, the 33886 is a fully protected monolithic H-Bridge
with Fault Status reporting. For a DC motor to run the input
conditions need be as follows: D1 input logic Low, D2 input
logic High, FS flag cleared (logic High), with one IN logic Low
and the other IN logic High to define output polarity. The
33886 can execute dynamic braking by simultaneously
turning on either both high side MOSFETs or both low side
MOSFETs in the output H-Bridge; e.g., IN1 and IN2 logic
High or IN1 and IN2 logic Low.
The short-circuit/overtemperature shutdown scheme is
unique and best described as using a junction temperature-
dependent active current “fold back” protection scheme.
When a short-circuit condition is experienced, the current
limited output is “ramped down” as the junction temperature
increases above 160 C, until at 175 C the current has
decreased to about 2.5 A. Above 175 C, overtemperature
shutdown (latch-OFF) occurs. This feature allows the device
to remain in operation for a longer time with unexpected
loads, while still retaining adequate protection for both the
device and the load.
The 33886 outputs are capable of providing a continuous DC
load current of 5.0 A from a 40 V V+ source. An internal
charge pump supports PWM frequencies up to 10 kHz. An
FUNCTIONAL PIN DESCRIPTION
POWER/ANALOG GROUNDS (PGND AND AGND)
FAULT STATUS (FS)
Power and analog ground pins. The power and analog
ground pins should be connected together with a very low-
impedance connection.
This pin is the device fault status output. This output is an
active Low open drain structure requiring a pull-up resistor to
5.0 V. Refer to Table 6, Truth Table, page 13.
POSITIVE POWER SUPPLY (V+)
LOGIC INPUT 1, 2 AND DISABLE1, 2 (IN1, IN2, D1,
AND D2)
V+ pins are the power supply inputs to the device. All V+ pins
must be connected together on the printed circuit board with
as short as possible traces offering as low-impedance as
possible between pins.
These pins are input control pins used to control the outputs.
These pins are 5.0 V CMOS-compatible inputs with
hysteresis. The IN1 and IN2 independently control OUT1 and
OUT2, respectively. D1 and D2 are complimentary inputs
used to tri-state disable the H-Bridge outputs.
V+ pins have an undervoltage threshold. If the supply voltage
drops below a V+ undervoltage threshold, the output power
stage switches to a tri-state condition and the fault status flag
is set and the Fault Status pin voltage switched to a logic Low.
When the supply voltage returns to a level that is above the
threshold, the power stage automatically resumes normal
operation according to the established condition of the input
pins and the fault status flag is automatically reset logic High.
When either D1 or D2 is set (D1 = logic High or D2 = logic
Low) in the disable state, outputs OUT1 and OUT2 are both
tri-state disabled; however, the rest of the device circuitry is
fully operational and the supply IQ(STANDBY) current is
reduced to a few milliamperes. Refer to Table 6, Truth Table,
and Static Electrical Characteristics table, page 6.
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FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
activation to facilitate detecting hard output short conditions
(see Figure 9, page 10).
H-BRIDGE OUTPUT 1, 2 (OUT1 AND OUT2)
These pins are the outputs of the H-Bridge with integrated
output FET body diodes. The bridge output is controlled using
the IN1, IN2, D1, and D2 inputs. The outputs have active
current limiting above 6.5 A. The outputs also have thermal
shutdown (tri-state latch-OFF) with hysteresis as well as
short-circuit latch-OFF protection.
CHARGE PUMP CAPACITOR (CCP)
Charge pump output pin. A filter capacitor (up to 33 nF) can
be connected from the CCP pin and PGND. The device can
operate without the external capacitor, although the C
CP
capacitor helps to reduce noise and allows the device to
perform at maximum speed, timing, and PWM frequency.
A disable timer (time tB) incorporated to detect currents that
are higher than active current limit is activated at each output
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FUNCTIONAL DEVICE OPERATION
FUNCTIONAL PIN DESCRIPTION
FUNCTIONAL DEVICE OPERATION
operational for a longer time but at a regressing output
performance level at junction temperatures above 160 C.
SHORT-CIRCUIT PROTECTION
If an output short-circuit condition is detected, the power
outputs tri-state (latch-OFF) independent of the input (IN1
and IN2) states, and the fault status output flag is set logic
Low. If the D1 input changes from logic High to logic Low, or
if the D2 input changes from logic Low to logic High, the
output bridge will become operational again and the fault
status flag will be reset (cleared) to a logic High state.
OVERTEMPERATURE SHUTDOWN AND
HYSTERESIS
If an overtemperature condition occurs, the power outputs
are tri-state (latched-OFF) independent of the input signals
and the fault status flag is set logic Low.
The output stage will always switch into the mode defined by
the input pins (IN1, IN2, D1, and D2), provided the device
junction temperature is within the specified operating
temperature.
To reset from this condition, D1 must change from logic High
to logic Low, or D2 must change from logic Low to logic High.
When reset, the output stage switches ON again, provided
that the junction temperature is now below the
overtemperature threshold limit minus the hysteresis.
ACTIVE CURRENT LIMITING
Note Resetting from the fault condition will clear the fault
The maximum current flow under normal operating
status flag.
conditions is internally limited to ILIM (5.2 A to 7.8 A). When
the maximum current value is reached, the output stages are
MAIN DIFFERENCES COMPARED TO
MC33186DH1
• COD pin has been removed. Pin 8 is now a Do Not
Connect (DNC) pin.
• Pin 20 is no longer connected in the 20 HSOP package. It
is now a DNC pin.
tri-stated for a fixed time (t ) of 20 s typical. Depending on
a
the time constant associated with the load characteristics, the
current decreases during the tri-state duration until the next
output ON cycle occurs (see Figures 9 and 12, page 10 and
page 11, respectively).
The current limiting threshold value is dependent upon the
device junction temperature. When -40 C < TJ < 160 C, ILIM
is between 5.2 A and 7.8 A. When TJ exceeds 160 C, the
ILIM current decreases linearly down to 2.5 A typical at
175 C. Above 175C the device overtemperature circuit
detects TLIM and overtemperature shutdown occurs (see
Figure 7, page 9). This feature allows the device to remain
• RDS(ON) max at TJ = 150 °C is now 225 m per each
output transistor.
• Maximum temperature operation is now 160 °C, as
minimum thermal shutdown temperature has increased.
• Current regulation limiting foldback is implemented above
160 °C TJ.
• Thermal resistance junction to case has been increased
from ~2.0 °C/W to ~5.0 °C/W.
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FUNCTIONAL DEVICE OPERATION
PERFORMANCE
PERFORMANCE
The 33886 is designed for enhanced thermal performance.
The significant feature of this device is the exposed copper
pad on which the power die is soldered. This pad is soldered
on a PCB to provide heat flow to ambient and also to provide
thermal capacitance. The more copper area on the PCB, the
better the power dissipation and transient behavior will be.
Figure 22 shows the thermal response with the device
soldered on to the test PCB described in Figure 21.
100
Example Characterization on a double-sided PCB: bottom
side area of copper is 7.8 cm2; top surface is 2.7 cm2 (see
Figure 21); grid array of 24 vias 0.3 mm in diameter.
10
Rth (¬¨ÐóC
1
0,1
0,001
0,01
0,1
1
10
t, Time (s)
100
1000
10000
Figure 22. 33886 Thermal Response
Top Side
Figure 21. PCB Test Layout
Bottom Side
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TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
A typical application schematic is shown in Figure 23. For
precision high-current applications in harsh, noisy
environments, the V+ by-pass capacitor may need to be
substantially larger.
DC
MOTOR
V+
33886
AGND
OUT1
V+
CCP
+
33 nF
47 F
OUT2
D2
D1
FS
PGND
IN1
IN2
IN2
IN1
FS
D1
D2
Figure 23. 33886 Typical Application Schematic
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Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
Important For the most current revision of the package, visit www.freescale.com and perform a keyword search on 98ASH70702A listed.
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
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PACKAGING
PACKAGE DIMENSIONS
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
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Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
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5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
5.0 A H-BRIDGE
33886HSOP
THERMAL ADDENDUM - REVISION 2.0
Introduction
This thermal addendum is provided as a supplement to the MC33186 technical
data sheet. The addendum provides thermal performance information that may
be critical in the design and development of system applications. All electrical,
application, and packaging information is provided in the data sheet.
20-PIN HSOP-EP
Packaging and Thermal Considerations
The MC33186 is offered in a 20 pin HSOP exposed pad, single die package.
There is a single heat source (P), a single junction temperature (TJ), and thermal
resistance (RJA).
VW (Pb-FREE) SUFFIX
98ASH70702A
TJ
.
=
RJA
P
20-PIN HSOP-EP
The stated values are solely for a thermal performance comparison of one
package to another in a standardized environment. This methodology is not
meant to and will not predict the performance of a package in an application-
specific environment. Stated values were obtained by measurement and
simulation according to the standards listed below.
Note For package dimensions, refer to
the 33886 device data sheet.
Standards
Table 7. Thermal Performance Comparison
Thermal Resistance
C/W]
20
1.0
(1)(2)
R
R
R
JA
JB
JA
1.0
(2)(3)
(1)(4)
(5)
6.0
0.2
52
0.2
* All measurements
are in millimeters
R
1.0
JC
NOTES:
Soldermast
openings
1.Per JEDEC JESD51-2 at natural convection, still air condition.
2.2s2p thermal test board per JEDEC JESD51-5 and JESD51-7.
Thermal vias
connected to top
buried plane
3.Per JEDEC JESD51-8, with the board temperature on the center
trace near the center lead.
20 Terminal HSOP-EP
1.27 mm Pitch
16.0 mm x 11.0 mm Body
12.2 mm x 6.9 mm Exposed Pad
4.Single layer thermal test board per JEDEC JESD51-3 and
JESD51-5.
5.Thermal resistance between the die junction and the exposed
pad surface; cold plate attached to the package bottom side,
remaining surfaces insulated.
Figure 24. Thermal Land Pattern for Direct Thermal
Attachment According to JESD51-5
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Freescale Semiconductor
5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
A
AGND
FS
DNC
IN2
1
20
19
18
17
16
15
14
13
12
11
2
IN1
D1
3
V+
4
CCP
V+
5
V+
OUT1
OUT1
DNC
PGND
PGND
6
OUT2
OUT2
D2
7
8
9
PGND
PGND
10
33886 Pin Connections
20-Pin HSOP
1.27 mm Pitch
16.0 mm x 11.0 mm Body
12.2 mm x 6.9 mm Exposed Pad
Figure 25. Thermal Test Board
Device on Thermal Test Board
Table 8. Thermal Resistance Performance
Material:
Single layer printed circuit board
FR4, 1.6 mm thickness
Thermal
Area A (mm2)
C/W
Resistance
Cu traces, 0.07 mm thickness
R
0.0
300
600
0.0
52
36
JA
Outline:
80 mm x 100 mm board area,
including edge connector for thermal
testing
32
Area A:
Cu heat-spreading areas on board
surface
RJS
10
300
600
7.0
6.0
Ambient Conditions: Natural convection, still air
RJAis the thermal resistance between die junction and
ambient air.
RJS is the thermal resistance between die junction and the
reference location on the board surface near a center lead of the
package (see Figure 25).
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5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
60
50
40
30
20
10
0
R
x
JA
0
300
Heat spreading area [mm²]
600
A
Figure 26. Device on Thermal Test Board RJA
100
10
1
R
x
JA
0.1
1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E+03 1.00E+04
time[s]
Time(s)
Figure 27. Transient Thermal Resistance RJA
Device on Thermal Test Board Area A = 600 (mm2)
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REVISION HISTORY
REVISION HISTORY
Revision
Date
Description of Changes
•
•
•
Implemented Revision History page
Added Thermal Addendum
Converted to Freescale format
7/2005
7.0
•
•
Updated data sheet format
Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from
Maximum Ratings on page 5. Added note with instructions to obtain this information from
www.freescale.com.
2/2007
8.0
•
Removed part number MC33886VW/R2 and added part number MC33886PVW/R2 to the ordering
Information on page 1.
3/2011
•
•
•
Updated package drawing.
Removed all DH package information.
Updated form and style
9.0
•
No technical changes. Revised back page. Updated document properties. Added SMARTMOS
sentence to last paragraph.
10.0
01/2014
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27
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© 2014 Freescale Semiconductor, Inc.
Document Number: MC33886
Rev 10.0
01/2014
相关型号：
MC33887APVW/R2
STEPPER MOTOR CONTROLLER, 5A, PDSO20, 16 X 11 MM, 1.27 MM PITCH, ROHS COMPLIANT, PLASTIC, HSOP-20
NXP
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