MCZ79076EGR2 [NXP]
SPECIALTY ANALOG CIRCUIT, PDSO16, 1.27 MM PITCH, LEAD FREE, PLASTIC, MS-013AA, SOIC-16;
| 型号： | MCZ79076EGR2 |
| 厂家： | 
NXP |
| 描述： | SPECIALTY ANALOG CIRCUIT, PDSO16, 1.27 MM PITCH, LEAD FREE, PLASTIC, MS-013AA, SOIC-16 光电二极管 |
| 文件： | 总13页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: 79076
Rev. 3.0, 3/2007
Freescale Semiconductor
Technical Data
Electronic Ignition Control
Circuit
79076
The 79076, in conjunction with an appropriate Freescale Power
Darlington Transistor, provides an economical solution for
automotive ignition applications. The 79076 offers optimum
performance by providing closed loop operation of the Power
Darlington in controlling the ignition coil current.
ELECTRONIC IGNITION CONTROL CIRCUIT
Features
• Hall or Variable Reluctance Sensor Input
• Ignition Coil Voltage Internally Limited to 375 V
• Coil Current Limiting to 7.5 A
• Output On–Time (Dwell) Control
• Dwell Feedback Control to Sense Coil Variation
• Pb-Free Packaging Designated by Suffix Code EG
DW SUFFIX
EG (PB-FREE) SUFFIX
98ASB42567B
16-PIN SOIC
ORDERING INFORMATION
Temperature
Device
Package
Range (T )
A
MC79076DW/R2
MCZ79076EG/R2
-30°C to 125°C
16 SOIC
79076
POWER GROUND
RPM DETECT
DWELL CONTROL
CURRENT SENSE
DWELL
BYPASS
REFERENCE
EST
BIAS VOLTAGE
VCC
ADVANCE
SIGNAL GROUND
REFERENCE/DWELL
Figure 1. 79076 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
POWER GROUND
DWELL CONTROL
RPM DETECT
BYPASS
CURRENT SENSE
DWELL
Output
Logic
and
Control
REFERENCE
EST
BIAS VOLTAGE
Reference
Generator
VCC
ADVANCE
SIGNAL GROUND
REFERENCE/DWELL
Figure 2. 79076 Simplified Internal Block Diagram
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
2
PIN CONNECTIONS
PIN CONNECTIONS
1
Power Ground
Current Sense
Dwell
NC
16
15
14
13
12
2
3
4
5
6
NC
NC
VCC
Dwell Control
RPM Detect
Bypass
Signal Ground
Reference/Dwell
Advance
11
10
7
8
Reference
EST
9
Bias Voltage
Figure 3. 79076 Pin Connections
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 1. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
V
VCC(SUS)
VCC(PK)
Steady-State
Transient Conditions (1)
36
50
Supply Current
IT
Transient Conditions (2)
Transient Negative Current (tT = 60ms)
Transient Negative Current (tT = 1ms)
1.0
-100
-1.3
A
mA
A
Input Voltage (3)
V
VIN1
VIN2
IIN1
Ref/Dwell, Advance
EST, Bypass
-5.0 to 30
-5.0 to 24
Ref/Dwell Input Current
Dwell ON Sink Current
-20
mA
A
ID
Output ON (Operating)
Output ON (t = 10ms)
0.3
0.8
Dwell OFF Voltage (4)
VD(OFF)
5.0
V
THERMAL RATINGS
Storage Temperature
TSTG
TA
-65 to 150
-30 to 125
°C
°C
Operating Ambient Temperature
THERMAL RESISTANCE
Operating Junction Temperature
Thermal Resistance (Junction-to-Ambient) - SO8
Peak Package Reflow Temperature During Reflow (5)
Notes
TJ
-30 to 150
80
°C
ØJ-A
°C/W
°C
(6)
,
TPPRT
Note 6
1. Survivability of device with transient voltage applied to VCC pin for a duration not to exceed 10ms.
2. Survivability of device with overvoltage applied to VCC pin producing the current for a duration not to exceed 10ms.
3. Exceeding this voltage range on the function pin may cause permanent damage to the device.
4. A zener diode is incorporated across collector to emitter of the output NPN device to prevent voltage overdrive of the external Darlington
switch transistor.
5. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
6. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
4
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INPUTS
Advance Input Resistance
R(A)
kΩ
(VCC = 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST =
Bypass = 0 V)
15
-
18
25
Advance Voltage (7)
VTH(A)
V
V
VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V
0.05
0.1
Advance Threshold Voltage (7)
(VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,)
Dwell = Reference = RPM Detect = open,
Dwell Control = sinking 10 µA)
Increasing
VTH+(A)
VTH-(A)
VHYS(A)
VB + 0.103 VB + 0.114 VB + 0.130
Decreasing
VB + 0.045 VB + 0.068
-
-
Hysteresis
0.018
6.0
0.045
9.2
Bypass Input Resistance
R(BP)
16
kΩ
V
(VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V)
Bypass Voltage
V(BP)
-
0.065
0.1
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V)
Bypass Threshold Voltage (8)
(Ref/Dwell = Advance = 1.0 V, EST = 3.0 V)
Increasing
V
VTH+(BP)
VTH-(BP)
VHYS(BP)
VB + 1.6 VB + 0.188 VB + 2.1
Decreasing
VB + 0.9 VB + 0.103
-
-
Hysteresis
0.65
90
0.86
105
Current Sense Threshold Voltage (9)
VTH(CS)
R(EST)
V(EST)
mV
kΩ
V
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V)
121
EST Input Resistance
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
7.0
-
10.3
0.07
18
EST Input Voltage (EST Mode)
0.1
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
Notes
7. Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive
(or negative) going transition 2.0 V respectively. It is expressed as VTH±(A) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
8. Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or
negative) going transition 1.5 V respectively. It is expressed as VTH±(BP) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
9. Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load.
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
EST Threshold Voltage (10)
V
(Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
Increasing
Decreasing
Hysteresis
VTH+(EST)
VTH-(EST)
VHYS(EST)
1.65
0.8
1.86
0.89
0.97
2.0
-
-
0.79
Ref/Dwell Current (11)
I(R/D)
µA
V
(VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V)
Ref/Dwell Voltage = 1.0 V
Ref/Dwell Voltage = 20 V
-12
-1.38
0.02
1.0
5.0
-1.0
Ref/Dwell Clamp Voltage
V(R/D)CL
(VCC = 16 V, Advance = 1.0 V, EST = Bypass = 0 V)
IR/D = 100µA (Sourcing)
-0.01
-0.62
-0.04
-0.54
0.2
-
IR/D = 1.0mA (Sourcing)
Ref/Dwell Threshold (Bypass Mode) (12)
V
V
(Advance = 1.0 V, EST = Bypass = 0 V, Reference = sinking 10 µA)
Increasing
Decreasing
Hysteresis
VTH+(R/D)BP
VTH-(R/D)BP
VHYS(R/D)BP
VB + 0.09 VB + 0.106 VB + 0.116
VB + 0.018 VB + 0.03
0.055 0.076
-
-
Ref/Dwell Threshold (EST Mode) (12)
(Advance = 1.0 V, EST = 0 V, Bypass = 3.0 V, Reference = sinking
10 µA)
VTH+(R/D)EST VB + 0.445 VB + 0.50 VB + 0.535
Increasing
Decreasing
Hysteresis
VTH-(R/D)EST
VHYS(R/D)EST
VB + 0.038 VB + 0.062
0.395 0.436
-
-
Ref/Dwell Threshold (No Pump) (13)
V
(Advance = 1.0 V, EST = Bypass = 0 V, Dwell = sinking 10 mA)
Increasing
Decreasing
Hysteresis
VTH+(R/D)NP
VTH-(R/D)NP
VHYS(R/D)NP
VB + 0.003 VB + 0.118 VB + 0.128
VB + 0.021 VB + 0.047
VB + 0.013 VB + 0.072
-
-
Notes
10. EST Threshold Voltage is the positive (or negative) going voltage on EST necessary cause the Dwell voltage to positive (or negative)
going transition 1.5 V respectively. It is expressed as VTH±(EST) and is in reference to ground.
11. Ref/Dwell can either source or sink current; A minus sign denotes the Ref/Dwell is sourcing current.
12. Ref/Dwell Threshold Voltage (Bypass Mode) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Reference
voltage to positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage
and VX is the additional voltage necessary to attain the threshold.
13. Ref/Dwell Threshold Voltage (No Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to
positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is
the additional voltage necessary to attain the threshold. Advance = 1.0 V providing no input assist or "No Pump" influence of Dwell signal;
Reference open.
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Ref/Dwell Threshold (Max Pump) (14)
Symbol
Min
Typ
Max
Unit
V
(VCC = 16 V, Advance = 3.0 V, EST = Bypass = 0 V, Dwell sinking
10 mA, Dwell Control = open)
Increasing
Decreasing
Hysteresis
VTH+(R/D)MP
VTH-(R/D)MP
VHYS(R/D)MP
VB + 0.175 VB + 0.474 VB + 0.80
VB + 0.115 VB + 0.425 VB + 0.735
VB + 0.025 VB + 0.048
-
OUTPUTS
Bias Resistance to Ground
R(B)
kΩ
Dwell = VCC = Ref/Dwell = Reference = Dwell Control = open,
Advance = 1.0 V, EST = Bypass = 0 V
0.55
0.68
0.9
Bias Voltage (Bypass Mode)
V(B)BP
V(B)BP
V(B)EST
V
mV
V
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
2.25
-
2.43
30
2.6
40
Bias Voltage Regulation (Bypass Mode)
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
Bias Voltage (EST Mode)
VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0 V, Bypass =
3.0 V
1.9
2.04
2.2
Dwell Saturation Voltage
V(D)SAT
V
VCC = 4.0 V, ID = 40 mA, Ref/Dwell = Advance =3.0 V,
EST = Bypass = 0 V
-
-
-
0.05
0.14
0.20
0.1
VCC = 16 V, ID = 160 mA, Ref/Dwell = Advance =3.0 V,
EST = Bypass = 0 V
0.24
0.35
VCC = 24 V, ID = 240 mA, Ref/Dwell = Advance =1.0 V,
EST = Bypass = 3.0 V
VCC = 36 V, ID = 360 mA, Ref/Dwell = Advance =1.0 V,
EST = Bypass = 3.0 V
-
0.29
0.5
Dwell Reverse Clamp Voltage (15)
Dwell Leakage Current (16)
V(D)REV
I(D)KG
-0.9
-0.98
-1.2
V
µA
VCC = 16 V, Dwell = 5.0 V, Ref/Dwell = Advance = 3.0 V, EST =
Bypass = 0, Bias Voltage = Reference = open
-
-
0.044
0.13
50
Reference Low (17)
V(R)LOW
V
IR = sinking 0.3 mA, Ref/Dwell = Advance = 1.0 V, EST = Bypass =
0 V
0.22
Notes
14. Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to
positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is
the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of
Dwell signal; Reference = Dwell Control = open.
15. All pins open except Pwr Gnd with Dwell sinking 200 mA.
16. Limit conditions with Dwell output NPN in the OFF condition.
17. Reference saturation voltage to ground with 0.3mA of current going into the Reference.
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Reference High/Un-Clamped (27)
Symbol
Min
Typ
Max
Unit
V(R)HI/UNCL
V
VCC = 4.0 V, IR = sourcing 100 mA, Ref/Dwell = 3.0 V, Advance =
1.0 V, EST = Bypass = 0 V
3.2
3.36
-
Reference High/Clamped (27)
V(R)HI/CL
V
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
IR = sourcing 10 µA
-
5.41
15.3
6.0
-
12
IR = sourcing 1.0 mA
CONTROLS
Dwell Control Negative Clamp Voltage (27)
V(DC)-CL
V(DC)+CL
I(DC)CHG
V
VCC = 16 V, IDC = sourcing 100 µA, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
0.5
8.0
30
18
-
0.7
8.2
47
0.8
8.4
58
Dwell Control Positive Clamp Voltage (27)
V
VCC = 16 V, IDC = sinking 100 µA, Ref/Dwell = 1.0 V, Advance = Open,
EST = Bypass = 0 V
Dwell Control Charge Current (27)
µA
µA
µA
VCC = 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST
= Bypass = 0 V
Dwell Control Discharge Current (27)
I(DC)DISCHG
VCC = 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
33
48
Dwell Control Input Current (27)
I(DC)SINK
VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell
Control = 7.0 V
1.1
0.54
2.5
1.0
RPM Detect Charge Current ON (27)
I(RPM)CHG
mA
µA
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
-4.0
RPM Detect Current (27)
I(RPM)LKG
VCC = 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V
RPM Detect = 0.5 V
RPM Detect = 1.5 V
04.0
-0.1
0.55
0.01
1.0
0.1
RPM Detect Clamp Voltage (27)
V(RPM)CL
V
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass =
0 V, RPM Detect = sourcing 16 µA
2.4
2.5
2.7
Notes
18. Dwell Control adjusts the reference voltage of Dwell Comparator.
19. Dwell Control. sourcing 100 µA.
20. Dwell Control sinking 100 µA.
21. Dwell Control at 3.0 V; Internal Dwell Control transistor OFF.
22. Dwell Control at 3.0 V; Internal Dwell Control transistor ON.
23. Dwell Control at 7.0 V; Internal Dwell Control transistor OFF.
24. Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See Typical
Applications on page 10
25. Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current. Typical Applications
on page 10
26. Q53 and Q54 both ON; RPM Detect sinking 16 µA. Typical Applications on page 10
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
8
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VCC ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
0.8
-
Typ
0.92
-2.0
Max
1.0
-
Unit
RPM Detect Threshold (27)
VTH-(RPM)
V
VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V
RPM Detect Charge Current
I(RPM)CHG
mA
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
Notes
27. Decreasing Threshold; RPM Detect voltage decreased from 0.6 V until Dwell voltage transitions low to 1.5 V with 10 mA load.
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
PACKAGING
PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
For the most current package revision, visit www.freescale.com and perform a keyword search using the “98A” listed below.
DW SUFFIX
EG SUFFIX (PB-FREE)
16-PIN
PLASTIC PACKAGE
98ASB42567B
ISSUE F
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
REVISION HISTORY
REVISION HISTORY
REVISION
DATE
DESCRIPTION OF CHANGES
•
•
•
•
Implemented Revision History page
Converted to Freescale format
Added MCZ79076EG/R2 to the Ordering Information
Removed MCCF79076 and all corresponding references.
3/2007
3.0
79076
Analog Integrated Circuit Device Data
Freescale Semiconductor
12
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79076
Rev. 3.0
3/2007
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