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元器件品牌
MHT1000HR5
[NXP]
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET;
元器件型号：
MHT1000HR5
生产厂家：
NXP Semiconductors
描述和应用：
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
PDF文件：
总10页 (文件大小：653K)
下载文档：
下载PDF数据表文档文件
型号参数：MHT1000HR5参数
查看货源
MHT1001H
RF Power LDMOS Transistor
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NXP
MHT1001HR5
RF Power LDMOS Transistor
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156
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NXP
MHT1002GNR3
RF Power LDMOS Transistors
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156
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NXP
MHT1002N
RF Power LDMOS Transistors
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156
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2
NXP
MHT1002NR3
RF Power LDMOS Transistors
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156
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1
NXP
MHT1004GNR3
RF POWER, FET
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156
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0
PHILIPS
MHT1004NR3
RF POWER, FET
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156
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0
PHILIPS
MHT1006NT1
RF Power LDMOS Transistor for Consumer and Commercial Cooking, 728-2700 MHz, 10 W CW, 28 V
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156
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0
PHILIPS
MHT1008NT1
MHT1008NT1
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156
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0
PHILIPS
MHT10N10
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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156
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0
MOTOROLA
MHT10N10
10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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156
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0
MOTOROLA
MHT10N10HX
10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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156
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0
MOTOROLA
MHT10N10HXV
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Warning
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156
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0
MOTOROLA
MHT12P10
Power Field-Effect Transistor, 10A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MOTOROLA
MHT12P10
10A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
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MOTOROLA
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