MHT2012NT1 [NXP]
Narrow Band High Power Amplifier;
| 型号： | MHT2012NT1 |
| 厂家： | 
NXP |
| 描述： | Narrow Band High Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总14页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MHT2012N
Rev. 0, 07/2018
NXP Semiconductors
Technical Data
RF LDMOS Integrated Power
Amplifier
MHT2012N
This 12.5 W CW RF power integrated circuit is designed for RF energy
applications operating in the 2450 MHz ISM band.
Typical Performance: VDD = 28 Vdc, Pin = 11 dBm, IDQ1 = 15 mA, IDQ2 = 75 mA
2400–2500 MHz, 12.5 W CW, 28 V
RF LDMOS INTEGRATED
POWER AMPLIFIER
Frequency
(MHz)
Signal
Type
G
PAE
(%)
P
out
ps
(dB)
30.1
30.0
29.7
(W)
13.0
12.7
11.7
2400
2450
2500
CW
51.3
51.4
50.5
Features
PQFN 8 8
PLASTIC
High gain simplifies layout and reduced PCB area compared to a
discrete design
Qualified up to a maximum of 32 VDD operation
On--chip input and interstage matching (50 ohm input)
Integrated quiescent current temperature compensation with
enable/disable function (1)
Integrated ESD protection
150C case and junction temperature rating
Ideal as a driver for high power RF energy applications
Typical Applications
Driver for consumer and commercial cooking applications
Driver for industrial heating applications, such as sterilization,
pasteurization, drying, moisture--leveling process, curing and welding
Driver for medical applications, such as microwave ablation,
renal denervation and diathermy
Final stage for portable heating devices and portable medical systems
V
V
GS2
GS1
24 23 22 21 20 19
18
17
16
15
14
13
N.C.
N.C.
1
2
3
4
5
6
N.C.
N.C.
Quiescent Current
Temperature Compensation
(1)
RF /V
RF
out DS2
in
RF /V
out DS2
RF
in
N.C.
N.C.
N.C.
N.C.
RF
RF /V
out DS2
7
8 9 10 11 12
in
V
DS1
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +65
–0.5, +10
32, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +150
20
T
C
C
(1,2)
Operating Junction Temperature Range
Input Power
T
J
C
P
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 81C, 12.5 W, 2450 MHz
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 12 mA
= 72 mA
14
4.3
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
1B, passes 500 V
C3, passes 1000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
1
Adc
nAdc
nAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
500
200
DS
GS
Gate--Source Leakage Current
(V = 0.9 Vdc, V = 0 Vdc)
I
GS
DS
Stage 1 -- On Characteristics
Gate Threshold Voltage
V
V
0.8
—
1.2
4.9
1.6
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 3 Adc)
DS
D
(4)
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 12 mAdc)
GG(Q)
DS
DQ1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Data measured in NXP test fixture with 4.7 k resistor in series with V
and V
pins.
GS1
GS2
(continued)
MHT2012N
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
1
Adc
nAdc
nAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
500
200
DS
GS
Gate--Source Leakage Current
(V = 0.9 Vdc, V = 0 Vdc)
I
GS
DS
Stage 2 -- On Characteristics
Gate Threshold Voltage
V
V
0.8
—
1.2
4.8
1.6
—
Vdc
Vdc
Vdc
GS(th)
GG(Q)
DS(on)
(V = 10 Vdc, I = 14 Adc)
DS
D
(1)
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 72 mAdc)
DS
DQ2
Drain--Source On--Voltage
(V = 10 Vdc, I = 140 mAdc)
V
0.05
0.14
0.20
GS
D
Table 6. Typical Performance
In NXP Reference Circuit, 50 ohm system, V = 28 Vdc, I
= 15 mA, I
= 75 mA, 2400–2500 MHz Bandwidth
DQ2
DD
DQ1
Power Gain
G
—
—
—
—
—
29.7
50.5
11.7
14
—
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
P1dB
P3dB
G
P
P
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW
W
out
out
W
Gain Variation over Temperature
0.036
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.004
—
dB/C
(–30C to +85C)
Table 7. Load Mismatch/Ruggedness
In NXP Reference Circuit, 50 ohm system, I
= 12 mA, I
= 72 mA
DQ2
DQ1
Frequency
(MHz)
P
in
(dBm)
Signal Type
VSWR
Test Voltage, V
Result
DD
2450
CW
10:1 at all
14
32
No Device Degradation
Phase Angles
(3 dB Overdrive)
Table 8. Ordering Information
Device
Tape and Reel Information
T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel
Package
MHT2012NT1
PQFN 8 8
1. Data measured in NXP test fixture with 4.7 k resistor in series with V
and V
pins.
GS2
GS1
MHT2012N
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
9
8
7
6
5
10
10
10
10
10
V
= 28 Vdc
DD
I = 615 mA
D
768 mA
921 mA
90
100
110
120
130
140
150
160
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 3. MTTF versus Junction Temperature – CW
MHT2012N
RF Device Data
NXP Semiconductors
4
Table 9. Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I
= 12 mA, I = 73 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1
DQ2
Max Output Power
P1dB
(1)
Z
PAE
(%)
f
Z
Z
in
()
load
()
D
source
()
(%)
49.8
51.9
52.6
Gain (dB)
30.0
(dBm)
42.2
(W)
17
(MHz)
2400
2450
2500
40.9 + j23.6
38.1 + j30.8
32.9 + j30.7
48.3 – j23.1
7.22 – j4.32
7.06 – j3.92
6.76 – j3.83
49.7
51.8
52.5
47.3 – j30.9
40.4 – j32.8
29.9
42.3
17
30.0
42.4
18
Max Output Power
P3dB
(2)
Z
()
PAE
(%)
f
Z
Z
()
load
D
source
()
in
(%)
49.4
50.8
51.2
Gain (dB)
(dBm)
(W)
(MHz)
2400
2450
2500
40.9 + j23.6
42.8 – j26.8
7.50 – j4.46
7.20 – j4.35
7.05 – j4.26
27.9
42.8
19
49.3
50.7
51.1
38.1 + j30.8
32.9 + j30.7
40.4 – j32.0
33.9 – j32.4
27.8
27.9
43.0
43.0
20
20
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Note: Measurement made on a per side basis.
Table 10. Load Pull Performance — Maximum Efficiency Tuning
V
= 28 Vdc, I
= 12 mA, I = 73 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1
DQ2
Max Efficiency
P1dB
(1)
Z
PAE
(%)
f
Z
Z
in
()
load
()
D
source
()
(%)
56.2
56.8
59.5
Gain (dB)
(dBm)
(W)
(MHz)
2400
2450
2500
40.9 + j23.6
38.1 + j30.8
32.9 + j30.7
58.6 – j22.8
4.19 – j1.25
4.01 – j1.06
3.63 – j1.34
30.5
40.9
12
56.1
56.7
59.4
56.8 – j34.4
48.5 – j37.7
30.2
30.4
41.0
41.1
13
13
Max Efficiency
P3dB
(2)
Z
()
PAE
(%)
f
Z
Z
()
load
D
source
()
in
(%)
54.3
55.2
57.0
Gain (dB)
(dBm)
(W)
(MHz)
2400
2450
2500
40.9 + j23.6
51.9 – j26.8
4.28 – j1.45
4.19 – j1.50
3.94 – j1.74
28.5
41.6
15
54.2
55.1
56.9
38.1 + j30.8
32.9 + j30.7
48.5 – j35.0
40.4 – j36.5
28.2
28.4
41.9
42.0
15
16
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Note: Measurement made on a per side basis.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
MHT2012N
RF Device Data
NXP Semiconductors
5
P3dB – TYPICAL LOAD PULL CONTOURS — 2450 MHz
2
0
2
41
41.5
40.5
E
42
40
39
0
–2
–4
–6
–8
52
54
50
42.5
E
48
–2
–4
–6
–8
46
P
P
44
42.5
42
10
40
41
42
41.5
40
2
4
6
8
10
12
14
2
4
6
8
12
14
REAL ()
REAL ()
Figure 4. P3dB Load Pull Output Power Contours (dBm)
Figure 5. P3dB Load Pull Efficiency Contours (%)
2
27.5
27
0
E
–2
28
–4
–6
P
27.5
27
25
26.5
26
4
–8
2
6
8
10
12
14
REAL ()
Figure 6. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
MHT2012N
RF Device Data
NXP Semiconductors
6
2400–2500 MHz REFERENCE CIRCUIT — 2 3 (5.1 cm 7.6 cm)
C9
C8
V
G
V
D
C1
C2
C15
R1
C10
C13
C18
C17
MHT2012N
Rev. 1
C7
Q1
C3
C6
C4
C5
R2
C14
C19
C16
Cꢀ11
V
G
V
D
D103883
C12
aaa--030920
Figure 7. MHT2012N Reference Circuit Component Layout — 2400–2500 MHz
Table 11. MHT2012N Reference Circuit Component Designations and Values — 2400–2500 MHz
Part
Description
Part Number
GRM32ER61H106KA12L
GRM32NR72A104KA01B
ATC600F0R5BT250XT
ATC600F1R6BT250XT
ATC600F4R7BT250XT
227CKS050M
Manufacturer
Murata
C1, C4, C9, C12
10 F Chip Capacitor
C2, C5, C8, C11
0.1 F Chip Capacitor
Murata
ATC
C3
0.5 pF Chip Capacitor
C6
1.6 pF Chip Capacitor
ATC
C7
4.7 pF Chip Capacitor
ATC
C10
220 F, 50 V Electrolytic Capacitor
Illinois Capacitor
ATC
C13, C14, C15, C16, C17, C18, C19 5.6 pF Chip Capacitor
ATC600F5R6BT250XT
MHT2012N
Q1
RF Power LDMOS Transistor
4.7 k, 1/4 W Chip Resistor
Rogers RT6035HTC, 0.030, = 3.5
NXP
R1, R2
PCB
CRCW12064K70FKEA
D103883
Vishay
MTL
r
MHT2012N
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 2400–2500 MHz REFERENCE CIRCUIT
30
60
55
50
45
16
15
14
13
V
= 28 Vdc, P = 13 dBm, I
= 15 mA, I
= 75 mA
DQ2
DD
in
DQ1
29.5
29
PAE
G
ps
28.5
28
27.5
27
P
out
26.5
2400
2425
2450
f, FREQUENCY (MHz)
2475
2500
Figure 8. Power Gain, Power Added Efficiency and CW Output Power
versus Frequency at a Constant Input Power
65
50
35
20
5
42
39
36
33
30
V
= 28 Vdc, I
= 15 mA, I
= 75 mA
DD
DQ1
DQ2
PAE
2500 MHz
2450 MHz
2400 MHz
2450 MHz
G
ps
2400 MHz
2500 MHz
100
75
50
25
0
27
24
2500 MHz
2450 MHz
21
18
15
2400 MHz
P
in
0
4
8
12
16
20
P
, OUTPUT POWER (WATTS)
out
Figure 9. Power Gain, Power Added Efficiency and
Input Power versus CW Output Power and Frequency
MHT2012N
RF Device Data
NXP Semiconductors
8
8.00
1.45
0.50
0.80 5.90
8.80
4.9 4.9 solder pad with
thermal via structure.
All dimensions in mm.
Figure 10. PCB Pad Layout for 24--Lead PQFN 8 8
MHT2012N
AWLYWZ
Figure 11. Product Marking
MHT2012N
RF Device Data
NXP Semiconductors
9
PACKAGE DIMENSIONS
MHT2012N
RF Device Data
NXP Semiconductors
10
MHT2012N
RF Device Data
NXP Semiconductors
11
MHT2012N
RF Device Data
NXP Semiconductors
12
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2018
Initial release of data sheet
MHT2012N
RF Device Data
NXP Semiconductors
13
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us:
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E 2018 NXP B.V.
Document Number: MHT2012N
Rev. 0, 07/2018
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