MHW1346N [NXP]

5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN;


型号：	MHW1346N
厂家：	NXP
描述：	5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN 高功率电源放大器射频微波功率放大器
文件：	总4页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: MHW1346N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

CATV Amplifier Module

Features

MHW1346N

• Specified for 22- and 26-Channel Loading

• Excellent Distortion Performance

• Superior Gain, Return Loss and DC Current Stability over Temperature

• Capable of Handling Multiple Channels in the Return Path with Good

Distortion Performance

5- 200 MHz, 35 dB GAIN

26-CHANNEL

CATV HIGH-SPLIT

REVERSE AMPLIFIER

MODULE

• Silicon Bipolar Transistor Technology

• Unconditionally Stable Under All Load Conditions

Applications

• CATV Systems Operating in the 5 to 200 MHz Frequency Range

• Designed for Broadband Applications Requiring Low Distortion

Characteristics

• Specified for Use as a Return Path Amplifier for Low-, Mid- and High-Split

2-Way Cable TV Systems

Description

• 24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier Module

• Replaced MHW1346. There are no form, fit or function changes with this

part replacement.

• RoHS Compliant

CASE 1302-01, STYLE 1

Table 1. Maximum Ratings

Rating

Symbol

Value

+65

Unit

dBmV

Vdc

°C

RF Voltage Input (Single Tone)

DC Supply Voltage

+28

Operating Case Temperature Range

Storage Temperature Range

- 20 to +100

- 40 to +100

stg

°C

Table 2. Electrical Characteristics (V = 24 Vdc, T = +30°C, 75 W system, unless otherwise noted)

Characteristic

Symbol

Min

Typ

—

Max

200

35.8

1.0

Unit

MHz

Bandwidth

Power Gain

Slope

All

(f = 5 MHz)

(5-200 MHz)

34.5

—

Gain Flatness (Peak To Valley)

Return Loss — Input/Output

—

0.6

IRL/ORL

(@ f = 5-65 MHz)

(@ f = 65-200 MHz)

—

Composite Second Order

dBc

(V = +50 dBmV per Ch., Worst Case)

out

5-175 MHz

5-200 MHz

22-Channel FLAT

26-Channel FLAT

CSO

—

-76

-75

-72

—

MHW1346N

RF Device Data

Freescale Semiconductor

Table 2. Electrical Characteristics (V = 24 Vdc, T = 30°C, 75 Ω system, unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Cross Modulation Distortion

dBc

(V = +50 dBmV per Ch., Worst Case)

out

22-Channel FLAT

26-Channel FLAT

XMD

—

- 64

- 63

- 60

—

Composite Triple Beat

dBc

(V = +50 dBmV per Ch., Worst Case)

out

5-175 MHz

5-200 MHz

22-Channel FLAT

26-Channel FLAT

CTB

—

- 72

- 70

- 68

—

Noise Figure

(f = 200 MHz)

—

3.5

DC Current

310

325

350

MHW1346N

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

0.010

INCHES

DIM MIN MAX

MILLIMETERS

MIN MAX

−−− 1.775

−−− 1.085

−−− 0.840

−−− 45.085

−−− 27.559

−−− 21.336

0.015

0.465

0.300

0.100 BSC

0.156 BSC

0.315 0.355

0.021

0.510 11.811 12.954

0.325 7.62 8.255

2.540 BSC

3.962 BSC

8.001 9.017

0.381

0.533

1.000 BSC

0.165 BSC

0.100 BSC

25.400 BSC

4.191 BSC

2.540 BSC

2X 6−32UNC−2B

0.010

Z T A

2X U

0.148

0.168

3.759

4.267

−−− 0.600

1.500 BSC

−−− 15.24

38.100 BSC

5.080 BSC

0.200 BSC

−−− 0.250

−−− 6.350

7 8 9

0.435

0.400 BSC

0.152 0.163

0.009 0.011

−−− 11.049

−−−

10.160 BSC

3.861

0.229

4.140

0.279

STYLE 1:

PIN 1. RF INPUT

2. GROUND

3. GROUND

4. DELETED

5. VDC

0.020

T A

0.010

Z T A

6. DELETED

7. GROUND

8. GROUND

9. RF OUTPUT

CASE 1302-01

ISSUE E

MHW1346N

RF Device Data

Freescale Semiconductor

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MHW1346N

RF Device Data

Freescale Semiconductor

Document Number: MHW1346N

4^{Rev. 3, 5/2006}

MHW1346N [NXP]

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