MM912 [NXP]

Intelligent integrated precision battery sensor;
MM912
型号: MM912
厂家: NXP    NXP
描述:

Intelligent integrated precision battery sensor

文件: 总396页 (文件大小:6665K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Document Number: MM912_637D1  
Rev. 6.0, 6/2021  
NXP Semiconductors  
Data sheet: Technical data  
Intelligent integrated precision  
battery sensor  
The MM912I637 (96 kB) and MM912J637 (128 kB) are fully integrated LIN  
Battery monitoring devices, based on NXP SMARTMOS and S12 MCU  
Technology.  
MM912_637  
Battery Monitoring System  
The device supports precise current measurement via an external shunt resistor,  
and precise battery voltage measurement via a series resistor directly at the  
battery plus pole. The integrated temperature sensor combined in the close  
proximity to the battery, allows battery temperature measurement.  
The integrated LIN 2.1 interface makes the sensor feedback available on the LIN  
Bus.  
Features  
• Battery voltage measurement  
• Battery current measurement in up to 8 ranges  
• On chip temperature measurement  
EP SUFFIX (WF-TYPE)  
SOT619-25(D)  
EP SUFFIX (WF-TYPE)  
SOT619-16  
48-PIN QFN  
• Normal and two low-power modes  
48-PIN QFN  
• Current threshold detection and current averaging in standby => wake-up  
from low-power mode  
Applications  
• Triggered wake-up from LIN and periodic wake-up  
• Signal low pass filtering (current, voltage)  
• 12 V Lead-acid battery monitoring  
• PGA (programmable low-noise gain amplifier) with automatic gain control  
• Accurate internal oscillator (an external quartz oscillator may be used for  
extended accuracy)  
• Communication via a LIN 2.1, LIN2.0 bus interface  
• S12 microcontroller with 128 kByte flash, 6.0 kByte RAM, 4.0 kByte data flash  
• Background debug module  
• External temperature sensor option (TSUP, VTEMP)  
• Optional 2nd external voltage sense input (VOPT)  
• 4 x 5.0 V GPIO including one wake-up capable high voltage input (PTB3/L0)  
• 8 x MCU general purpose I/O including SPI functionality  
• Industry standard EMC compliance  
MM912_637  
VDDA  
LIN  
(optional)  
ADC Supply  
LIN Interface  
AGND  
ADCGND  
LGND  
Internal  
Temp  
Sense  
Module  
VDDL  
TSUP  
VTEMP  
Optional Temp Sense  
Input and Supply  
2.5 V Supply  
5.0 V Supply  
VDDH  
VDDD2D  
VDDX  
Battery  
Positive Pole  
+
VOPT  
VSENSE  
Voltage sense Module  
Power Supply  
VDDRX  
DGND  
VSSD2D  
VSSRX  
VSUP  
Digital Ground  
Reset  
Battery  
Negative Pole  
_
ISENSEL  
RESET  
RESET_A  
PA0/MISO  
PA1/MOSI  
PA2/SCK  
PA3/SS  
PA4  
PA5  
PA6  
PA7  
BKGD/MODC  
PE0/EXTAL  
PE1/XTAL  
TEST  
Current Sense Module  
Shunt  
ISENSEH  
PTB0  
Chassis  
Ground  
-5.0 V GPI/O shared  
with TIMER, SCI and LIN  
-PTB3 high voltage  
WAKE capable  
5.0 V Digital I/O  
PTB1  
PTB2  
PTB3/L0  
GNDSUB  
TCLK  
4
Debug and External  
Oscillator  
Analog Test  
MCU Test  
TEST_A  
Figure 1. Simplified application diagram  
© NXP B.V. 2021. All rights reserved.  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table of Contents  
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
1
2
Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2.1 MM912_637 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2.2 Recommended external components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
2.3 Pin structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
3.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
3.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
3.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
3.4 Supply currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
3.5 Static electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
3.6 Dynamic electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
3.7 Thermal protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33  
3.8 Electromagnetic compatibility (EMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33  
Functional description and application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34  
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34  
4.2 MM912_637 - analog die overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56  
4.3 Analog die - power, clock and resets - PCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59  
4.4 Interrupt module - IRQ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
4.5 Current measurement - ISENSE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89  
4.6 Voltage measurement - VSENSE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
4.7 Temperature measurement - TSENSE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91  
4.8 Channel acquisition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
4.9 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135  
4.10 Basic timer module - TIM (TIM16B4C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139  
4.11 General purpose I/O - GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
4.12 LIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164  
4.13 Serial communication interface (S08SCIV4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170  
4.14 Life time counter (LTC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184  
4.15 Die to die interface - target . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187  
4.16 Embedded microcontroller - overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188  
4.17 MCU - port integration module (9S12I128PIMV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197  
4.18 MCU - interrupt module (S12S9S12I128PIMV1V1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205  
4.19 Memory map control (S12PMMCV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209  
4.20 MCU - debug module (9S12I128PIMV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221  
4.21 MCU - security (S12XS9S12I128PIMV1V2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254  
4.22 Background debug module (9S12I128PIMV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257  
4.23 S12 clock, reset, and power management unit (9S12I128PIMV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273  
4.24 MCU - serial peripheral interface (S129S12I128PIMV1V5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304  
4.25 128 kByte flash module (S12FTMRC128K1V1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323  
4.26 MCU - die-to-die initiator (9S12I128PIMV1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361  
MM912_637 - trimming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373  
5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373  
5.2 IFR trimming content and location . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373  
5.3 Memory map and registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 377  
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 383  
6.1 Package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 383  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390  
3
4
5
6
7
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
2/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
1
Ordering information  
Table 1. Ordering information  
Package  
Type number  
Name  
Description  
Version  
MM912I637TM2EP  
MM912J637TM2EP  
MM912I637TV1EP  
MM912J637TV1EP  
plastic, thermal enhanced, very thin quad flatpack, no leads, 48 terminals,  
0.5 mm pitch, 0.15 dimple, wettable flank, 7 mm x 7 mm x 0.9 mm body  
SOT619-25(D)  
plastic, thermal enhanced, very thin quad flatpack, no leads, 48 terminals,  
0.5 mm pitch, 0.1 dimple, wettable flank, 7 mm x 7 mm x 0.85 mm body  
SOT619-25(D)  
HVQFN48  
MM912I637AM2EP  
plastic, thermal enhanced, very thin quad flatpack, no leads, 48 terminals,  
0.5 mm pitch, 0.15 dimple, wettable flank, 7 mm x 7 mm x 0.9 mm body  
SOT619-161  
SOT619-161  
MM912J637AM2EP  
MM912I637AV1EP  
MM912J637AV1EP  
plastic, thermal enhanced, very thin quad flatpack, no leads, 48 terminals,  
0.5 mm pitch, 0.1 dimple, wettable flank, 7 mm x 7 mm x 0.85 mm body  
1
Not recommended for new design  
Table 2. Ordering options  
Device (1)  
Maximum input  
Temperature range (TA)  
Flash (kB)  
Analog option  
voltage  
MM912I637TM2EP  
MM912J637TM2EP  
MM912I637AM2EP(2)  
MM912J637AM2EP(2)  
MM912I637TV1EP  
MM912J637TV1EP  
MM912I637AV1EP(2)  
MM912J637AV1EP(2)  
96  
128  
96  
–40 °C to 125 °C  
2
1
128  
96  
42 V  
128  
96  
–40 °C to 105 °C  
128  
Notes  
1. To order parts in tape & reel, add the R2 suffix to the part number.  
2. Not recommended for new design.  
Table 3. Analog options  
Feature  
Analog option 1  
Analog option 2  
Cranking Mode  
Not Characterized or Tested  
Fully Characterized and Tested  
External Wake-up (PTB3/L0)  
External Temperature Sensor Option (VTEMP)  
Optional 2nd External Voltage Sense Input (VOPT)  
No  
No  
No  
Yes  
Yes  
Yes  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
3/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
GNDSUB  
GNDSUB  
GNDSUB  
GNDSUB  
LGND  
LIN  
Internal Bus  
TEST_A  
TCLK  
VSUP  
RESET_A  
DGND  
VDDL  
VDDX  
VDDH  
VDDD2D  
VSSD2D  
VDDRX  
VSSRX  
Internal Bus  
RESET  
BKGD/MODC  
PA7  
D D R A  
P T  
A
Figure 2. Sample block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
4/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
2
Pin assignment  
PA6  
PTE0/EXTAL  
PTE1/XTAL  
TEST  
PTB3 / L0  
1
2
36  
VOPT  
35  
VSENSE  
3
34  
ADCGND  
4
33  
PA5  
ISENSEH  
5
32  
PA4  
ISENSEL  
6
31  
EP  
PA3/SS  
GNDSUB  
7
30  
PA2/SCK  
PA1/MOSI  
PA0/MISO  
VSSRX  
TSUP  
8
29  
VTEMP  
9
28  
AGND  
10  
11  
12  
27  
VDDA  
26  
VDDRX  
NC  
25  
Figure 3. MM912_637 pin connections  
2.1  
MM912_637 pin description  
The following table gives a brief description of all available pins on the MM912_637 device. Refer to the highlighted chapter for detailed  
information  
Table 4. MM912_637 pin description (continued)  
Pin #  
Pin Name  
Formal Name  
MCU PA6  
Description  
General purpose port A input or output pin 6. See Section 4.17, “MCU - port integration  
module (9S12I128PIMV1)".  
1
PA6  
EXTAL in one of the optional crystal/resonator drivers and external clock pins, and the PE0  
port may be used as a general purpose I/O. On reset, all the device clocks are derived from  
the internal reference clock. See Section 4.23, “S12 clock, reset, and power management  
unit (9S12I128PIMV1)".  
2
3
PE0/EXTAL  
MCU Oscillator  
XTAL is one of the optional crystal/resonator drivers and external clock pins, and the PE1  
port may be used as a general purpose I/O. On reset all the device clocks are derived from  
the internal reference clock. See Section 4.23, “S12 clock, reset, and power management  
unit (9S12I128PIMV1)".  
PE1/XTAL  
TEST  
MCU Oscillator  
MCU Test  
This input only pin is reserved for test. This pin has a pull-down device. The TEST pin must  
be tied to VSSRX in user mode.  
4
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
5/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 4. MM912_637 pin description (continued)  
Pin #  
Pin Name  
Formal Name  
MCU PA5  
Description  
General purpose port A input or output pin 5. See Section 4.17, “MCU - port integration  
module (9S12I128PIMV1)".  
5
PA5  
General purpose port A input or output pin 4. See Section 4.17, “MCU - port integration  
module (9S12I128PIMV1)".  
6
7
8
9
PA4  
PA3  
PA2  
PA1  
MCU PA4  
General purpose port A input or output pin 3, shared with the SS signal of the integrated  
SPI interface. See Section 4.17, “MCU - port integration module (9S12I128PIMV1)".  
MCU PA3 / SS  
MCU PA2 / SCK  
MCU PA1 / MOSI  
General purpose port A input or output pin 2, shared with the SCLK signal of the integrated  
SPI interface. See Section 4.17, “MCU - port integration module (9S12I128PIMV1)".  
General purpose port A input or output pin 1, shared with the MOSI signal of the integrated  
SPI interface. See Section 4.17, “MCU - port integration module (9S12I128PIMV1)".  
General purpose port A input or output pin 0, shared with the MISO signal of the integrated  
SPI interface. See Section 4.17, “MCU - port integration module (9S12I128PIMV1)".  
10  
11  
12  
PA0  
MCU PA0 / MISO  
MCU 5.0 V Ground  
MCU 5.0 V Supply  
VSSRX  
VDDRX  
External ground for the MCU - VDDRX return path.  
5.0 V MCU power supply. MCU core- (internal 1.8 V regulator) and flash (internal 2.7 V  
regulator) supply. This pin must be connected to VDDX.  
13  
14  
15  
16  
VSSD2D  
VDDD2D  
NC  
MCU 2.5 V Ground  
MCU 2.5 V Supply  
Not connected  
External ground for the MCU - VDDD2D return path.  
2.5 V MCU power supply. Die to die buffer supply. This pin must be connected to VDDH.  
This pin must be grounded in the application.  
GNDSUB  
Substrate Ground  
Substrate ground connection to improve EMC behavior.  
Voltage Regulator Output  
5.0 V  
5.0 V main voltage regulator output pin. An external capacitor (CVDDX) is needed. See  
Section 4.3, “Analog die - power, clock and resets - PCR".  
17  
18  
VDDX  
DGND  
This pin is the device digital ground connection. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
Digital Ground  
2.5 V high power main voltage regulator output pin to be connected with the VDDD2D MCU  
pin. An external capacitor (CVDDH) is needed. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
Voltage Regulator Output  
2.5 V  
19  
VDDH  
20  
21  
22  
23  
GNDSUB  
VSUP  
LIN  
Substrate Ground  
Power Supply  
LIN Bus I/O  
Substrate ground connection to improve EMC behavior.  
This pin is the device power supply pin. A reverse battery protection diode is required. See  
Section 4.3, “Analog die - power, clock and resets - PCR".  
This pin represents the single-wire bus transmitter and receiver. See Section 4.12, “LIN".  
This pin is the device LIN ground connection. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
LGND  
LIN Ground Pin  
24  
25  
NC  
NC  
Not connected (reserved)  
Not connected  
This pin must be grounded in the application.  
This pin must be grounded in the application.  
Low power analog voltage regulator output pin, permanently supplies the analog front end.  
An external capacitor (CVDDA) is needed. See Section 4.3, “Analog die - power, clock and  
resets - PCR".  
Analog Voltage Regulator  
Output  
26  
VDDA  
This pin is the device analog voltage regulator and LP oscillator ground connection. See  
Section 4.3, “Analog die - power, clock and resets - PCR".  
27  
28  
AGND  
Analog Ground  
External temperature sensor input. See Section 4.7, “Temperature measurement -  
TSENSE".  
VTEMP  
Temperature Sensor Input  
Temperature Sensor Supply Supply for the external temperature sensor. TSUP frequency compensation option to allow  
29  
30  
31  
TSUP  
Output  
capacitor CTSUP. See Section 4.7, “Temperature measurement - TSENSE".  
GNDSUB  
ISENSEL  
Substrate Ground  
Substrate ground connection to improve EMC behavior.  
Current sense input “Low”. This pin is used in combination with ISENSEH to measure the  
voltage drop across a shunt resistor. See Section 4.5, “Current measurement - ISENSE".  
Current Sense L  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
6/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 4. MM912_637 pin description (continued)  
Pin #  
Pin Name  
Formal Name  
Current Sense H  
Description  
Current sense input “high”. This pin is used in combination with ISENSEL to measure the  
voltage drop across a shunt resistor. See Section 4.5, “Current measurement - ISENSE".  
32  
ISENSEH  
Analog Digital Converter  
Ground  
Analog digital converter ground connection. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
33  
ADCGND  
Precision battery voltage measurement input. This pin can be connected directly to the  
battery line for voltage measurements. The voltage preset at this input is scaled down by  
an internal voltage divider. The pin is self protected against reverse battery connections.  
An external resistor (RVSENSE) is needed for protection. See Section 4.6, “Voltage  
measurement - VSENSE".  
34  
35  
VSENSE  
VOPT  
Voltage Sense  
Optional Voltage Sense  
Optional voltage measurement input. See Section 4.6, “Voltage measurement - VSENSE".  
This is the high voltage general purpose input pin 3, based on VDDX with the following  
shared functions:  
• Internal clamping structure to operate as a high voltage input (L0). When used as high  
voltage input, a series resistor (RL0) and capacitor to GND (CL0) must be used to protect  
against automotive transients, when used to connect outside the PCB.  
General Purpose Input 3 -  
High Voltage Input 0  
• 5.0 V (VDDX) digital port input  
36  
PTB3 / L0  
• Selectable internal pull-down resistor  
• Selectable wake-up input during low power mode.  
• Selectable timer channel input  
• Selectable connection to the LIN / SCI (Input only)  
See Section 4.11, “General purpose I/O - GPIO".  
This is the general purpose I/O pin 2 based on VDDX with the following shared functions:  
• Bidirectional 5.0 V (VDDX) digital port I/O  
• Selectable internal pull-up resistor  
• Selectable timer channel input/output  
• Selectable connection to the LIN / SCI  
See Section 4.11, “General purpose I/O - GPIO".  
37  
38  
39  
PTB2  
PTB1  
PTB0  
General Purpose I/O 2  
General Purpose I/O 1  
General Purpose I/O 0  
This is the general purpose I/O pin 1, based on VDDX with the following shared functions:  
• Bidirectional 5.0 V (VDDX) digital port I/O  
• Selectable internal pull-up resistor  
• Selectable timer channel input/output  
• Selectable connection to the LIN / SCI  
See Section 4.11, “General purpose I/O - GPIO".  
This is the general purpose I/O pin 0 based on VDDX with the following shared functions:  
• Bidirectional 5.0 V (VDDX) digital port I/O  
• Selectable internal pull-up resistor  
• Selectable timer channel input/output  
• Selectable connection to the LIN / SCI  
See Section 4.11, “General purpose I/O - GPIO".  
40  
41  
TCLK  
Test Clock Input  
Test mode clock input pin for Test mode only. This pin must be grounded in user mode.  
Substrate ground connection to improve EMC behavior.  
GNDSUB  
Substrate Ground  
Low Power Voltage  
Regulator Output  
2.5 V low power voltage regulator output pin. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
42  
43  
44  
VDDL  
TEST_A  
DGND  
Test Mode  
Analog die Test mode pin for Test mode only. This pin must be grounded in user mode.  
This pin is the device digital ground connection. See Section 4.3, “Analog die - power, clock  
and resets - PCR".  
Digital Ground  
Reset output pin of the analog die in Normal mode. Bidirectional reset I/O of the analog die  
in Stop mode. Active low signal with internal pull-up to VDDX. This pin must be connected  
to RESET. See Section 4.3, “Analog die - power, clock and resets - PCR".  
45  
RESET_A  
Reset I/O  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
7/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 4. MM912_637 pin description (continued)  
Pin #  
Pin Name  
Formal Name  
Description  
Bidirectional reset I/O pin of the MCU die. Active low signal with internal pull-up to VDDRX.  
This pin must be connected to RESETA. See Section 4.3, “Analog die - power, clock and  
resets - PCR".  
46  
RESET  
MCU Reset  
The BKGD/MODC pin is used as a pseudo-open-drain pin for the background debug  
communication. It is used as an MCU operating mode select pin during reset. The state of  
this pin is latched to the MODC bit at the rising edge of RESET. The BKGD pin has a pull-up  
device. See Section 4.20, “MCU - debug module (9S12I128PIMV1)".  
MCU Background Debug  
and Mode  
47  
48  
BKGD  
PA7  
General purpose port A input or output pin 7. See Section 4.17, “MCU - port integration  
module (9S12I128PIMV1)".  
MCU PA7  
2.2  
Recommended external components  
Figure 4 and Table 5 list the required / recommended / optional external components for the application.  
Battery  
Plus Pole  
D1  
RVOPT  
RVSENSE  
CVBAT  
Battery  
Minus Pole  
VDDL  
VDDD2D  
VDDH  
RISENSEL  
VDDRX  
VDDX  
ISENSEL  
CISENSEL  
RSHUNT  
CISENSEHL  
CVDDX  
RISENSEH  
DGND  
VSSD2D  
VSSRX  
ISENSEH  
CVDDH  
CISENSEH  
RESET  
Chassis  
Ground  
RESETA  
VTEMP  
TSUP  
RVTEMP  
LIN  
LIN  
VDDA  
CLIN  
CVDDA  
CTSUP  
LGND  
AGND  
ADCGND  
PTB3 / L0  
RL0  
CL0  
Note: Module GND connected to Battery Minus or Chassis Groundbased on configuration.  
Figure 4. Required/recommended external components  
Table 5. Required/recommended external components  
Name  
Description  
Value  
n.a.  
Connection  
VSUP-VBAT  
Comment  
D1  
Reverse Battery Diode  
Battery Blocking Capacitor  
VSENSE Current Limitation  
VOPT Current Limitation  
Current Shunt Resistor  
CVBAT  
RVSENSE  
RVOPT  
4.7 µF/100 nF  
2.2 k  
VSUP-GND  
Ceramic  
VSENSE-VBAT  
VOPT-signal  
2.2 k  
optional(3)  
RSHUNT  
100 µ  
ISENSEH-ISENSEL  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
8/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 5. Required/recommended external components  
Name  
Description  
EMC Resistor  
Value  
500 max  
500 max  
TBD  
Connection  
Comment  
RISENSEL  
select for best EMC performance  
select for best EMC performance  
select for best EMC performance  
select for best EMC performance  
select for best EMC performance  
RISENSEH  
CISENSEL  
CISENSEHL  
CISENSEH  
CVDDH  
CVDDX  
CVDDA  
CVDDL  
CLIN  
EMC Resistor  
EMC Capacitor  
EMC Capacitor  
TBD  
EMC Capacitor  
TBD  
Blocking Capacitor  
Blocking Capacitor  
Blocking Capacitor  
Blocking Capacitor  
LIN Bus Filter  
1.0 µF  
220 nF  
47 nF  
VDDH-GND  
VDDX-GND  
VDDA-GND  
VDDL-GND  
LIN-LGND  
L0  
n.a.  
not required  
not required  
n.a.  
RL0  
PTB3 / L0 Current Limitation  
PTB3 / L0 ESD Protection  
Blocking Capacitor  
VTEMP Current Limitation  
47 k  
47 nF  
CL0  
L0-GND  
220 pF  
20 k  
TSUP-GND  
VTEMP-signal  
not required(4)  
optional(3)  
CTSUP  
RVTEMP  
Notes  
3. Required if extended EMC protection is needed  
4. If an external temperature sensor is used, EMC compliance may require the addition of CTSUP. In this case the ECAP bit must be set to ensure the  
stability of the TSUP power supply circuit. See Section 4.7.1.2, “Block diagram".  
2.3  
Pin structure  
Table 6 documents the individual pin characteristic.  
Table 6. Pin type/structure  
Alternative pin  
Pin #  
Pin name  
Power supply  
Structure  
function  
1
2
PA6  
PE0  
n.a.  
VDDRX  
VDDRX  
VDDRX  
n.a.  
n.a.  
EXTAL  
XTAL  
n.a.  
PUPEE / OSCPINS_EN  
3
PE1  
PUPEE / OSCPINS_EN  
4
TEST  
PA5  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
GND  
5
n.a.  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
6
PA4  
n.a.  
7
PA3  
SS  
8
PA2  
SCK  
MOSI  
MISO  
n.a.  
9
PA1  
10  
11  
12  
13  
14  
PA0  
VSSRX  
VDDRX  
VSSD2D  
VDDD2D  
n.a.  
n.a.  
GND  
n.a.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
9/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 6. Pin type/structure  
Alternative pin  
function  
Pin #  
Pin name  
Power supply  
Structure  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
NC  
GNDSUB  
VDDX  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
GND  
VDDX  
GND  
DGND  
VDDH  
B2B-Diode to GNDSUB  
Negative Clamp Diode, Dynamic ESD (transient protection)  
GNDSUB  
VDDH  
GND  
GNDSUB  
VSUP  
VSUP  
VSUP  
GND  
Negative Clamp Diode, >42 V ESD  
No Negative Clamping Diode (-40 V), >42 V ESD  
B2B-Diode to GNDSUB  
LIN  
LGND  
NC  
n.a.  
Negative Clamp Diode, >15 V ESD  
n.a.  
NC  
n.a.  
VDDA  
VDDA  
GND  
Negative Clamp Diode, Dynamic ESD (transient protection)  
B2B-Diode to GNDSUB  
AGND  
VTEMP  
TSUP  
VDDA  
TSUP  
GND  
Negative Clamp Diode, >6.0 V ESD  
Negative Clamp Diode, Dynamic ESD (transient protection)  
GND  
GNDSUB  
ISENSEL  
ISENSEH  
ADCGND  
VSENSE  
VOPT  
n.a.  
Negative Clamp Diode, 2nd Clamp Diode to VDDA  
Negative Clamp Diode, 2nd Clamp Diode to VDDA  
B2B-Diode to GNDSUB  
n.a.  
GND  
n.a.  
No Negative Clamping Diode (-40 V), >42 V ESD  
No Negative Clamping Diode (-40 V), >42 V ESD  
Negative Clamp Diode, >6.0 V ESD  
Negative Clamp, Dynamic 5.5 V ESD  
Negative Clamp, Dynamic 5.5 V ESD  
Negative Clamp, Dynamic 5.5 V ESD  
Negative Clamp, Dynamic 5.5 V ESD  
GND  
n.a.  
PTB3 / L0  
PTB2  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
GND  
PTB1  
PTB0  
TCLK  
GNDSUB  
VDDL  
VDDL  
VDDRX  
GND  
Negative Clamp Diode, Dynamic ESD (transient protection)  
Negative Clamp, positive 10 V Clamp  
B2B-Diode to GNDSUB  
TEST_A  
DGND  
RESET_A  
RESET  
BKGD  
VDDRX  
VDDRX  
VDDRX  
VDDRX  
Negative Clamp, positive 10 V Clamp  
Pull-up  
MODC  
BKPUE  
PA7  
n.a.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
10/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3
Electrical characteristics  
3.1  
General  
This section contains electrical information for the microcontroller, as well as the MM912_637 analog die.  
3.2  
Absolute maximum ratings  
Absolute maximum ratings are stress ratings only. A functional operation under or outside these maximums is not guaranteed. Stress  
beyond these limits may affect the reliability, or cause permanent damage of the device.  
This device contains circuitry protecting against damage due to high static voltage or electrical fields. However, it is advised that normal  
precautions be taken to avoid application of any voltages higher than maximum rated voltages to this high-impedance circuit. Reliability  
of operation is enhanced if unused inputs are tied to an appropriate voltage level. All voltages are with respect to ground, unless otherwise  
noted.  
Table 7. Absolute maximum electrical ratings - analog die  
Ratings  
Symbol  
Value  
-0.3 to 42  
Unit  
V
VVSUP  
VSUP pin voltage  
VSENSE pin voltage with 2.2 k serial resistor (5)  
VOPT pin voltage with 2.2 k serial resistor  
VTEMP pin voltage  
-16 to 42  
V
VVSENSE  
VVOPT  
-16 to 42  
V
VVTEMP  
VISENSE  
IISENSE  
VBUS  
-0.3 to VDDA+0.25  
-0.5 to VDDA+0.25  
-1 to 1  
V
ISENSEH and ISENSEL pin voltage  
ISENSEH and ISENSEL pin current  
LIN pin voltage  
V
mA  
V
-33 to 42  
IBUSLIM  
LIN pin current (internally limited)  
L0 pin voltage with RPTB3  
Input / Output pins PTB[0:2] voltage  
Pin voltage at VDDX  
on page 16  
mA  
V
V
-0.3 to 42 max.  
-0.3 to VDDX+0.5  
-0.3 to 5.75  
PTB3  
VPTB0-2  
VDDX  
V
V
VDDH  
Pin voltage at VDDH  
-0.3 to 2.75  
V
I
VDDH output current  
internally limited  
internally limited  
-0.3 to VDDX+0.5  
-0.3 to VDDX+0.5  
A
VDDH  
I
VDDX output current  
A
VDDX  
V
TCLK pin voltage  
V
TCLK  
V
RESET_A pin voltage  
V
IN  
Notes  
5. It has to be assured by the application circuit that these limits will not be exceeded, e.g. by ISO pulse 1.  
Table 8. Maximum electrical ratings - MCU die (continued)  
Ratings  
Symbol  
VDDRX  
VDDD2D  
VIN  
Value  
Unit  
V
5.0 V supply voltage  
2.5 V supply voltage  
Digital I/O input voltage (PTA0...7)  
EXTAL, XTAL  
-0.3 to 6.0  
-0.3 to 3.6  
-0.3 to 6.0  
-0.3 to 2.16  
-25 to 25  
V
V
VIN  
V
Instantaneous maximum current single pin limit for all digital I/O pins(6)  
ID  
mA  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
11/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 8. Maximum electrical ratings - MCU die (continued)  
Ratings  
Symbol  
Value  
Unit  
Instantaneous maximum current single pin limit for EXTAL, XTAL  
IDL  
-25 to 25  
mA  
Notes  
6. All digital I/O pins are internally clamped to VSSRX and VDDRX  
.
Table 9. Maximum thermal ratings  
Ratings  
Symbol  
Value  
-55 to 150  
25 typ.  
Unit  
C  
TSTG  
Storage temperature  
Package thermal resistance (7)  
C/W  
R
JA  
Notes  
7. R JA value is derived using a JEDEC 2s2p test board  
3.3  
Operating conditions  
This section describes the operating conditions of the device. Conditions apply to all the following data, unless otherwise noted.  
Table 10. Operating conditions (8)  
Ratings  
Symbol  
Value  
Unit  
VSUP  
3.5 to 28  
V
Functional operating supply voltage - Device is fully functional. All features are  
operating.  
VSUPL  
2.5 to 3.5  
V
Extended range for RAM Content is guaranteed. Other device functionary is  
limited. With cranking mode enabled (seeSection 4.3.3.4, “Low-voltage  
operation - cranking mode device option").  
Functional operating VSENSE voltage (9)  
Functional operating VOPT voltage  
External temperature sense input - VTEMP  
LIN output voltage range  
0 to 28  
0 to 28  
V
V
VSENSE  
VOPT  
VTEMP  
VVSUP_LIN  
VISENSE  
VDDRX  
VDDD2D  
fOSC  
0 to 1.25  
V
7.0 to 18  
V
ISENSEH / ISENSEL terminal voltage  
MCU 5.0 V supply voltage  
-0.3 to 0.3  
3.13 to 5.5  
2.25 to 3.6  
4.0 to 16  
V
V
MCU 2.5 V supply voltage  
V
MCU oscillator  
MHz  
MHz  
C  
C  
C  
MCU bus frequency  
fBUS  
max. 32.768  
-40 to 125  
-40 to 150  
-40 to 150  
T
A
Operating ambient temperature  
Operating junction temperature - analog die  
Operating junction temperature - MCU die  
T
J_A  
T
J_M  
Notes  
8. The parametric data are guaranteed while the pins are within Operating Conditions. Other conditions are presented at the top of the parametric tables  
or noted into parameters.  
9. Values VSENSE > 28 V are flagged in the VSENSE  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
12/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.4  
Supply currents  
This section describes the current consumption characteristics of the device, as well as the conditions for the measurements.  
3.4.1  
Measurement conditions  
All measurements are without output loads. The currents are measured in MCU special single chip mode, and the CPU code is executed  
from RAM, unless otherwise noted.  
For Run and Wait current measurements, PLL is on and the reference clock is the IRC1M, trimmed to 1.024 MHz. The bus frequency is  
32.768 MHz and the CPU frequency is 65.536 MHz. Table 11 and Table 12 show the configuration of the CPMU module for Run, Wait,  
and Stop current measurements. Table 13 shows the configuration of the peripherals for run current measurements  
Table 11. CPUM configuration for run/wait and full stop current measurement  
CPMU register  
CPMUSYNR  
CPMUPOSTDIV  
CPMUCLKS  
Bit settings/conditions  
VCOFRQ[1:0]=01,SYNDIV[5:0] = 32.768 MHz  
POSTDIV[4:0]=0,  
PLLSEL=1  
CPMUOSC  
OSCE=0, Reference clock for PLL is fREF=fIRC1M trimmed to 1.024 MHz  
Table 12. CPMU configuration for pseudo stop current measurements  
CPMU register  
Bit settings/conditions  
CPMUCLKS  
CPMUOSC  
CPMURTI  
PLLSEL=0, PSTP=1, PRE=PCE=RTIOSCSEL=COPOSCSEL=1  
OSCE=1, External square wave on EXTAL fEXTAL=16 MHz, VIH= 1.8 V, VIL=0 V  
RTDEC=0, RTR[6:4]=111, RTR[3:0]=1111;  
CPMUCOP  
WCOP=1, CR[2:0]=111  
Table 13. MCU peripheral configurations for run supply current measurements  
Peripheral  
SPI  
Configuration  
configured to master mode, continuously transmit data (0x55 or 0xAA) at 4.0 Mbit/s  
continuously read data  
D2DI  
COP  
COP Watchdog Rate 224  
RTI  
enabled, RTI Control Register (RTICTL) set to $FF  
The module is disabled.  
DBG  
Table 14. Analog die configurations for normal mode supply current measurements  
Peripheral  
D2D  
Configuration  
maximum frequency (32.768 MHz)  
LIN  
enabled, 50% dominant, 50% recessive  
TIMER  
LTC  
enabled, all channels active in output compare mode with minimum timeout  
enabled, maximum timeout  
SCI  
continuously transmitting data (0x55 or 0xAA) with 19.2 kBit/s  
current/voltage: highest sampling rate (8.0 kHz), LPF enabled, chopper and compensation enabled, automatic gain  
adjustment enabled temperature: internal temperature measurement enabled, 1.0 kHz sampling rate  
Acquisition Channels  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
13/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 15. Supply currents(10)  
Ratings  
Symbol  
Min.  
Typ.(12)  
Max.  
Unit  
MM912_637 combined consumption  
IRUN  
Normal mode current both dice  
25  
mA  
ISTOP  
Stop Mode current measured at VSUP  
Continuous base current (12)  
-40 °C iSTOP_S  
100  
105  
106  
120  
190  
230  
85 °C (11)  
125 °C  
Pseudo Stop Current, RTI and COP enabled (12)  
-40 °C iSTOP_S  
410  
450  
520  
490  
520  
590  
85 °C (11)  
µA  
125 °C  
Stop Current during Cranking Mode  
-40 °C iSTOP_S  
85 °C (11)  
125 °C  
105  
125  
185  
130  
230  
270  
Current adder during current trigger event - (typ. 10 ms duration(14), temperature  
measurement = OFF)  
1500  
1750  
ISLEEP  
Sleep Mode measured at VSUP  
-40 °C iSTOP_S  
85 °C (11)  
60  
60  
80  
80  
130  
140  
1750  
µA  
125 °C  
Current adder during current trigger event - (typ. 10 ms duration (14), temperature  
measurement = OFF)  
1500  
Analog die contribution - excluding MCU and external load current, (3.5 V VSUP 28 V; -40 °C TA 125 °C)  
INORMAL  
Normal mode current measured at VSUP  
MCU die contribution, VDDRX = 5.5 V  
Run Current, TA 125 °C  
1.5  
4.0  
mA  
IRUN  
13.5  
7.0  
18.8  
8.8  
mA  
mA  
IWAIT  
Wait current, TA 125 °C  
Notes  
10. See Table 11, Table 12, Table 13, and Table 14 for conditions. Currents measured in Test mode with external loads (100 pF) and the external clock  
at 64 MHz.  
11. Not tested in production, guaranteed by characterization  
12. Typical values noted reflect the approximate parameter mean at TA = 25 °C.  
13. From VSUP 6.0 to 28 V  
14. Duration based on channel configuration. 10ms typical for Decimation Factor = 512, Chopper = ON.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
14/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.5  
Static electrical characteristics  
All characteristics noted under conditions 3.5 V VSUP28 V, -40 C TA125 C, unless otherwise noted. Typical values noted reflect  
the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.  
3.5.1  
Static electrical characteristics analog die  
Table 16. Static electrical characteristics - power supply  
Ratings  
Symbol  
Min.  
1.75  
1.85  
Typ.  
1.9  
Max.  
2.1  
Unit  
VPORL  
Low Voltage Reset L (POR) Assert (measured on VDDL)  
Cranking Mode Disabled  
V
VPORH  
Low Voltage Reset L (POR) Deassert (measured on VDDL)  
Cranking Mode Disabled  
V
V
2.1  
2.35  
VPORCL  
Low Voltage Reset L (POR) Assert (measured on VDDL)  
Cranking Mode Enabled(15)  
1.0  
1.9  
2.0  
2.5  
2.7  
1.9  
2.05  
1.3  
2.05  
2.15  
2.75  
2.95  
2.075  
2.175  
1.7  
2.2  
2.3  
3.0  
3.25  
2.2  
2.3  
VLVRAL  
VLVRAH  
VLVRXL  
VLVRXH  
VLVRHL  
VLVRHH  
VUVIL  
Low Voltage Reset A (LVRA) Assert (measured on VDDA)  
Low Voltage Reset A (LVRA) Deassert (measured on VDDA)  
Low Voltage Reset X (LVRX) Assert (measured on VDDX)  
Low Voltage Reset X (LVRX) Deassert (measured on VDDX)  
Low Voltage Reset H (LVRH) Assert (measured on VDDH)  
Low Voltage Reset H (LVRH) Deassert (measured on VDDH)  
V
V
V
V
V
V
Undervoltage Interrupt (UVI) Assert (measured on VSUP), Cranking Mode  
Disabled  
4.55  
4.7  
5.2  
5.4  
3.6  
6.1  
6.2  
4.0  
4.1  
V
V
V
VUVIH  
VUVCIL  
VUVCIH  
VTH  
Undervoltage Interrupt (UVI) Deassert (measured on VSUP), Cranking Mode  
Disabled  
Undervoltage Cranking Interrupt (UVI) Assert (measured on VSUP) Cranking  
Mode Enabled  
3.4  
Undervoltage Cranking Interrupt (UVI) Deassert (measured on VSUP) Cranking  
Mode Enabled  
3.5  
3.8  
28  
V
V
VSENSE/VOPT High Voltage Warning Threshold Assert(16)  
Notes  
15. Deassert with Cranking off = VPORH  
16. 5.0 V < VSUP < 28 V, Digital Threshold at the end of channel chain (incl. compensation)  
Table 17. Static electrical characteristics - resets  
Ratings  
Low-state Output Voltage IOUT = 2.0 mA  
Symbol  
Min.  
Typ.  
Max.  
0.8  
Unit  
V
VOL  
RRPU  
VIL  
Pull-up Resistor  
25  
50  
k  
V
Low-state Input Voltage  
High-state Input Voltage  
Reset Release Voltage (VDDX)  
RESET_A pin Current Limitation  
0.3VDDX  
VIH  
0.7VDDX  
0
V
VRSTRV  
ILIMRST  
0.02  
1.0  
10  
V
mA  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
15/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 18. Static electrical characteristics - voltage regulator outputs  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Analog Voltage Regulator - VDDA(17)  
VDDA  
IVDDA  
Output Voltage 1.0 mA I  
1.5 mA  
2.25  
2.5  
2.75  
10  
V
VDDA  
Output Current Limitation  
mA  
Low Power Digital Voltage Regulator - VDDL(17)  
Output Voltage  
VDDL  
2.25  
2.4  
2.5  
2.5  
2.75  
V
High Power Digital Voltage Regulator - VDDH(18)  
VDDH  
IVDDH  
Output Voltage 1.0 mA I  
30 mA  
2.75  
65  
V
VDDH  
Output Current Limitation  
mA  
5.0 V Voltage Regulator - VDDX(18)  
VDDX  
IVDDX  
Output Voltage 1.0 mA I  
30 mA  
3.15  
45  
5.0  
60  
5.9  
80  
V
VDDX  
Output Current Limitation  
mA  
Notes  
17. No additional current must be taken from those outputs.  
18. The specified current ranges does include the current for the MCU die. No external loads recommended.  
Table 19. Static electrical characteristics - LIN physical layer interface - LIN  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
IBUSLIM  
Current Limitation for Driver dominant state. VBUS = 18 V  
40  
120  
200  
mA  
IBUS_PAS_DOM  
IBUS_PAS_REC  
IBUS_NO_GND  
IBUS_NO_BAT  
Input Leakage Current at the Receiver incl. Pull-up Resistor RSLAVE  
Driver OFF; VBUS = 0 V; VBAT = 12 V  
;
;
-1.0  
mA  
µA  
Input Leakage Current at the Receiver incl. Pull-up Resistor RSLAVE  
Driver OFF; 8.0 V VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT  
20  
Input Leakage Current; GND Disconnected; GNDDEVICE = VSUP  
0 < V < 18 V; VBAT = 12 V  
;
-1.0  
1.0  
mA  
µA  
BUS  
Input Leakage Current; V  
disconnected; VSUP_DEVICE = GND; 0 <  
BAT  
100  
0.4  
V
< 18 V  
BUS  
VBUSDOM  
VBUSREC  
VBUS_CNT  
VBUS_HYS  
DSER_INT  
RSLAVE  
Receiver Input Voltage; Receiver Dominant State  
Receiver Input Voltage; Receiver Recessive State  
Receiver Threshold Center (VTH_DOM + VTH_REC)/2  
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM  
Voltage Drop at the serial Diode  
VSUP  
VSUP  
VSUP  
VSUP  
V
0.6  
0.475  
0.5  
0.525  
0.175  
1.0  
)
0.3  
20  
0.7  
30  
LIN Pull-up Resistor  
60  
k  
VDOM  
Low Level Output Voltage, IBUS=40 mA  
High Level Output Voltage, IBUS=-10 µA, RL=33 k  
J2602 Detection Deassert Threshold for VSUP level  
J2602 Detection Assert Threshold for VSUP level  
J2602 Detection Hysteresis  
0.3  
VSUP  
V
VREC  
VSUP-1  
5.9  
VJ2602H  
VJ2602L  
VJ2602HYS  
VLINWUP  
6.3  
6.2  
6.7  
6.6  
250  
6.0  
V
5.8  
V
70  
190  
5.25  
mV  
V
BUS Wake-up Threshold  
4.0  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
16/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 20. Static electrical characteristics - high voltage input - PTB3 / L0  
Ratings  
Symbol  
VWTHR  
VIH  
Min.  
1.3  
Typ.  
Max.  
3.4  
Unit  
V
Wake-up Threshold - Rising Edge  
Input High Voltage (digital Input)  
Input Low Voltage (digital Input)  
Input Hysteresis  
2.6  
0.7VDDX  
VSS-0.3  
50  
VDDX+0.3  
0.35VDDX  
200  
V
VIL  
V
VHYS  
VL0CLMP  
IIN  
140  
6.0  
mV  
V
Internal Clamp Voltage  
4.9  
7.0  
Input Current PTB3 / L0 (VIN = 42 V; RL0=47 k)  
Internal pull-down resistance(19)  
PTB3 / L0 Series Resistor  
1.1  
mA  
k  
k  
nF  
RPD  
50  
100  
47  
200  
RPTB3  
CL0  
42.3  
42.3  
51.7  
PTB3 / L0 Capacitor  
47  
51.7  
Notes  
19. Disabled by default.  
Table 21. Static electrical characteristics - general purpose I/O - PTB[0...2]  
Ratings  
Symbol  
Min.  
0.7VDDX  
VSS-0.3  
50  
Typ.  
Max.  
VDDX+0.3  
0.35VDDX  
200  
Unit  
V
VIH  
VIL  
Input High Voltage  
Input Low Voltage  
Input Hysteresis  
V
VHYS  
IIN  
140  
mV  
Input Leakage Current (pins in high-impedance input mode)  
(VIN = VDDX or VSSX  
-1.0  
1.0  
µA  
)
VOH  
VOL  
Output High Voltage (pins in output mode) Full drive IOH = –5.0 mA  
Output Low Voltage (pins in output mode) Full drive IOL = 5.0 mA  
Internal Pull-up Resistance (VIH min. > Input voltage > VIL max)(20)  
Input Capacitance  
VDDX-0.8  
V
V
0.8  
50  
RPUL  
CIN  
25  
37.5  
6.0  
k  
pF  
mA  
pF  
Maximum Current All PTB Combined(21)  
-17  
17  
IBMAX  
COUT  
Output Drive strength at 10 MHz  
100  
Notes  
20. Disabled by default.  
21. Overall VDDR Regulator capability to be considered.  
Table 22. Static electrical characteristics - current sense module(22) (continued)  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Unit  
IGAINERR  
Gain Error  
with temperature based gain compensation adjustment(23), (24)  
-0.5  
+/-0.1  
%
Offset Error(25) (26)  
,
0.5  
µV  
µV  
IOFFSETERR  
IRES  
Resolution  
0.1  
ISENSEH, ISENSEL  
terminal voltage  
VINC  
VIND  
-300  
-200  
300  
200  
mV  
differential signal voltage range  
ISENSE_DLC  
Differential Leakage Current: differential voltage between ISENSEH/  
ISENSEL, 200 mV  
-2.0  
2.0  
nA  
µV  
IRESWAKE  
Wake-up Current Threshold Resolution  
0.2  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
17/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 22. Static electrical characteristics - current sense module(22) (continued)  
Ratings  
Resistor Threshold for OPEN Detection  
Notes  
Symbol  
Min.  
Typ.  
Max.  
Unit  
ROPEN  
0.8  
1.25  
1.8  
M  
22. 3.5 V VSUP 28 V, after applying default trimming values - see Section 5, “MM912_637 - trimming".  
23. Gain Compensation adjustment on calibration request interrupt with TCALSTEP  
24. 0.65%, including lifetime drift for gain 256 and 512  
25. Chopper Mode = ON, Gain with automatic gain control enabled  
26. Parameter not tested. Guaranteed by design and characterization  
Table 23. Static electrical characteristics - voltage sense module(27)  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Gain Error(28)  
VGAINERR  
18 V VIN 28 V  
-0.5  
-0.25  
-0.15  
0.1  
0.1  
0.1  
0.5  
0.25  
0.15  
%
3.5 V VIN 5.0 V(29)  
5.0 V VIN 18 V(29),(31)  
Offset Error(30),(32)  
-1.5  
1.5  
0.5  
mV  
mV  
VOFFSETERR  
VRES  
Resolution with RVSENSE = 2.2 k  
Notes  
27. 3.5 V VSUP 28 V, after applying default trimming values - see Section 5, “MM912_637 - trimming".  
28. Including resistor mismatch drift  
29. Gain Compensation adjustment on calibration request interrupt with TCALSTEP  
30. Chopper Mode = ON.  
31. 0.2%, including lifetime drift  
32. Parameter not tested. Guaranteed by design and characterization.  
Table 24. Static electrical characteristics - temperature sense module(33)  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
TRANGE  
Measurement Range  
-40  
150  
°C  
TACC  
Accuracy  
-40 °C TA 60 °C(34)  
-40 °C TA 50 °C  
-2.0  
-3.0  
2.0  
3.0  
K
TRES  
VTSUP  
Resolution  
8.0  
1.25  
220  
mK  
V
TSUP Voltage Output, 10 µA I  
TSUP Capacitor with ECAP = 1  
100 µA  
1.1875  
209  
1.3125  
231  
TSUP  
CTSUP  
pF  
K
TCALSTEP  
Max Calibration Request Interrupt Temperature Step  
-25  
25  
Notes  
33. 3.5 V VSUP 28 V, after applying default trimming values - see Section 5, “MM912_637 - trimming".  
34. Temperature not tested in production. Guaranteed by design and characterization.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
18/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.5.2  
Static electrical characteristics MCU die  
Table 25. Static electrical characteristics - MCU  
Ratings  
Symbol  
Min.  
0.6  
-
Typ.  
0.9  
Max.  
-
Unit  
V
VPORA  
Power On Reset Assert (measured on VDDRX)  
Power On Reset Deassert (measured on VDDRX)  
Low Voltage Reset Assert (measured on VDDRX)  
Low Voltage Reset Deassert (measured on VDDRX)  
Low Voltage Interrupt Assert (measured on VDDRX)  
Low Voltage Interrupt Deassert (measured on VDDRX)  
VPORD  
VLVRA  
VLVRD  
VLVIA  
0.95  
3.06  
3.09  
4.21  
4.34  
1.6  
-
V
2.97  
-
V
3.3  
4.36  
4.49  
V
4.06  
4.19  
V
VLVID  
V
Table 26. Static electrical characteristics - oscillator (OSCLCP)  
Ratings  
Symbol  
iOSC  
Min.  
Typ.  
Max.  
Unit  
A  
pF  
Startup Current  
100  
Input Capacitance (EXTAL, XTAL pins)  
EXTAL Pin Input Hysteresis  
CIN  
7.0  
180  
0.9  
VHYS,EXTAL  
VPP,EXTAL  
mV  
V
EXTAL Pin oscillation amplitude (loop controlled Pierce)  
Table 27. 5.0 V I/O characteristics for all I/O pins except EXTAL, XTAL, TEST, D2DI, and supply pins  
(4.5 V < VDDRX < 5.5 V; TJ: –40 °C to +150 °C, unless otherwise noted) (continued)  
Ratings  
Symbol  
VIH  
Min.  
0.65*VDDRX  
Typ.  
Max.  
Unit  
Input High Voltage  
Input High Voltage  
Input Low Voltage  
Input Low Voltage  
Input Hysteresis  
VDDRX+0.3  
0.35*VDDRX  
V
V
VIH  
VIL  
V
VIL  
VSSRX–0.3  
V
V
250  
mV  
HYS  
IIN  
Input Leakage Current (pins in high-impedance input mode)(35)   
= V or V  
A  
V
–1.00  
1.00  
IN  
DDRX  
SSRX  
Input Leakage Current (pins in high-impedance input mode)(36)   
V
= V or V  
1.0  
1.0  
8.0  
14  
26  
32  
40  
60  
74  
92  
240  
IN  
DDX  
SSX  
TA = –40 C  
TA = 25 C  
TA = 70 C  
TA = 85 C  
TA = 105 C  
TA = 110 C  
TA = 120 C  
TA = 125 C  
TA = 130 C  
TA = 150 C  
IIN  
nA  
Output High Voltage (pins in output mode), I  
= –4.0 mA  
VOH  
VOL  
IPUL  
IPDH  
Cin  
VDDRX – 0.8  
7
0.8  
-130  
130  
V
OH  
Output Low Voltage (pins in output mode), I  
OL  
= 4.0 mA  
-10  
10  
V
Internal Pull-up Current, VIH min > input voltage > VIL max  
Internal Pull-down Current, VIH min > input voltage > VIL max  
Input Capacitance  
A  
A  
pF  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
19/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 27. 5.0 V I/O characteristics for all I/O pins except EXTAL, XTAL, TEST, D2DI, and supply pins  
(4.5 V < VDDRX < 5.5 V; TJ: –40 °C to +150 °C, unless otherwise noted) (continued)  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Injection Current(37)  
Single pin limit  
IICS  
IICP  
–2.5  
–25  
2.5  
25  
mA  
Total device Limit, sum of all injected currents  
Notes  
35. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each 8.0 C to 12 C in the  
temperature range from 50 C to 125 C.  
36. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each 8.0 C to 12 C in the  
temperature range from 50 C to 125 C.  
37. Refer to Section 3.5.2.1, “Current injection" for more details  
3.5.2.1  
Current injection  
The power supply must maintain regulation within the VDDX operating range during instantaneous and operating maximum current  
conditions. If positive injection current (VIN > VDDX) is greater than IDDX, the injection current may flow out of VDDX and could result in  
the external power supply going out of regulation. Ensure that the external VDDX load will shunt current greater than the maximum injection  
current. This will be the greatest risk when the MCU is not consuming power; e.g., if no system clock is present, or if the clock rate is very  
low, which would reduce overall power consumption.  
3.6  
Dynamic electrical characteristics  
Dynamic characteristics noted under conditions 3.5 V VSUP28 V, -40 C TA125 C, unless otherwise noted. Typical values noted  
reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.  
3.6.1  
Dynamic electrical characteristics analog die  
Table 28. Dynamic electrical characteristics - modes of operation  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
fOSCL  
Low Power Oscillator Frequency  
512  
kHz  
fTOL_A  
Low Power Oscillator Tolerance over full temperature range  
Analog Option 2  
Analog Option 1  
-4.0  
-5.0  
4.0  
5.0  
%
%
Low Power Oscillator Tolerance - synchronized ALFCLK(38)  
ALF clock cycle = 1.0 ms  
fTOLC_A  
fTOL-0.2  
fTOL-0.1  
fTOL-0.05  
fTOL-0.025  
fTOL+0.2  
fTOL+0.1  
fTOL+0.05  
fTOL+0.025  
ALF clock cycle = 2.0 ms  
ALF clock cycle = 4.0 ms  
ALF clock cycle = 8.0 ms  
fTOL  
Notes  
38. Parameter not tested. Guaranteed by design and characterization.  
Table 29. Dynamic electrical characteristics - die to die interface - D2D  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
fD2D  
Operating Frequency (D2DCLK, D2D[0:3])  
32.768  
MHz  
Table 30. Dynamic electrical characteristics - resets  
Ratings  
Symbol  
Min.  
1.0  
Typ.  
2.0  
32  
Max.  
3.2  
Unit  
µs  
tRSTDF  
Reset Deglitch Filter Time  
tRSTRT  
Reset Time for watchdog and Hardware Reset (RESETA pin set low)  
µs  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
20/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 31. Dynamic electrical characteristics - wake-up / cyclic sense  
Ratings  
Cyclic Wake-up Time(39)  
Symbol  
Min.  
Typ.  
Max.  
TIM4CH  
16Bit  
Unit  
ms  
t
ALFCLK  
ALFCLK  
WAKEUP  
tSTEP  
Cyclic Current Measurement Step Width(40)  
ms  
Notes  
39. Cyclic wake-up on ALFCLK clock based 16 Bit TIMER with maximum 128x prescaler (min 1x)  
40. Cyclic wake-up on ALFCLK clock with 16 Bit programmable counter  
Table 32. Dynamic electrical characteristics - window watchdog  
Ratings  
Initial Non-window Watchdog Timeout  
Symbol  
Min.  
Typ.  
Max.  
Unit  
tIWDTO  
see Figure 39  
ms  
Table 33. Dynamic electrical characteristics - LIN physical layer interface - LIN (continued)  
Ratings  
Bus Wake-up Deglitcher (Sleep and Stop Mode)  
Fast Bit Rate (Programming Mode)  
Symbol  
Min.  
60  
Typ.  
80  
Max.  
100  
100  
6.0  
Unit  
µs  
tPROPWL  
BRFAST  
tRX_PD  
kBit/s  
µs  
Propagation delay of receiver  
tRX_SYM  
Symmetry of receiver propagation delay rising edge w.r.t. falling edge  
-2.0  
2.0  
µs  
LIN driver - 20.0 kBit/s; bus load conditions (CBUS; RBUS): 1.0 nF; 1.0 k/ 6,8 nF;660 / 10 nF;500   
D1  
Duty Cycle 1:  
THREC(MAX) = 0.744 x VSUP  
THDOM(MAX) = 0.581 x VSUP  
7.0 V VSUP18 V; tBIT = 50 µs;  
0.396  
D1 = tBUS_REC(MIN)/(2 x tBIT  
)
D2  
Duty Cycle 2:  
THREC(MIN) = 0.422 x VSUP  
THDOM(MIN) = 0.284 x VSUP  
0.581  
7.6 V VSUP18 V; tBit = 50 µs  
D2 = tBUS_REC(MAX)/(2 x tBIT  
)
LIN driver - 10.0 kBit/s; bus load conditions (CBUS; RBUS): 1.0 nF; 1.0 k/ 6,8 nF;660 / 10 nF;500   
D3  
Duty Cycle 3:  
THREC(MAX) = 0.778 x VSUP  
THDOM(MAX) = 0.616 x VSUP  
7.0 V VSUP18 V; tBit = 96 µs  
0.417  
D3 = tBUS_REC(MIN)/(2 x tBIT  
)
D4  
Duty Cycle 4:  
THREC(MIN) = 0.389 x VSUP  
THDOM(MIN) = 0.251 x VSUP  
0.590  
7.6 V VSUP18 V; tBIT = 96 µs  
D4 = tBUS_REC(MAX)/(2 x tBIT  
)
LIN Transmitter Timing, (VSUP from 7.0 to 18 V) - See Figure 5  
tTRAN_SYM  
Transmitter Symmetry  
tTRAN_SYM < MAX(ttran_sym60%, tTRAN_SYM40%)  
tTRAN_SYM60% = tTRAN_PDF60% - tTRAN_PDR60%  
tTRAN_SYM40% = tTRAN_PDF40% - tTRAN_PDR40%  
-7.25  
0
7.25  
µs  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
21/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
TX  
BUS  
60%  
40%  
ttran_pdf60%  
ttran_pdf40%  
ttran_pdr40%  
ttran_pdr60%  
Figure 5. LIN transmitter timing  
Table 34. Dynamic electrical characteristics - general purpose I/O - PTB3 / L0]  
Ratings  
Symbol  
Min.  
Min.  
Typ.  
Max.  
Unit  
tWUPF  
Wake-up Glitch Filter Time  
20  
µs  
Table 35. Dynamic electrical characteristics - general purpose I/O - PTB[0...2]  
Ratings  
Symbol  
Typ.  
Max.  
10  
Unit  
MHz  
ns  
fPTB  
GPIO Digital Frequency  
Propagation Delay - Rising Edge(41)  
Rise Time - Rising Edge(41)  
20  
tPDr  
tRISE  
tPDf  
17.5  
20  
ns  
Propagation Delay - Falling Edge(41)  
Rise Time - Falling Edge(41)  
ns  
tFALL  
17.5  
ns  
Notes  
41. Load PTBx = 100 pF  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
22/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 36. Dynamic Electrical Characteristics - Current Sense Module  
Ratings  
Symbol  
Min  
Typ  
Max  
Unit  
Frequency Attenuation(42),(43)  
<100 Hz (fPASS  
>500 Hz (fSTOP  
)
)
dB  
3.0  
8.0  
40  
Signal Update Rate(44)  
0.5  
kHz  
µs  
fIUPDATE  
fIVMATCH  
tGC  
Signal Path Match with Voltage Channel  
Gain Change Duration (Automatic GCB active)(45)  
2.0  
14  
µs  
Notes  
42. Characteristics identical to Voltage Sense Module  
43. With default LPF coefficients  
44. After passing decimation filter  
45. Parameter not tested. Guaranteed by design and characterization.  
Table 37. Dynamic electrical characteristics - voltage sense module  
Ratings  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Frequency attenuation(46),(47)  
95...105 Hz (fPASS  
>500 Hz (fSTOP  
)
dB  
3.0  
8.0  
)
40  
Signal update rate(48)  
0.5  
kHz  
µs  
fVUPDATE  
fIVMATCH  
Signal path match with Current Channel(49)  
2.0  
Notes  
46. Characteristics identical to Voltage Sense Module  
47. With default LPF coefficients  
48. After passing decimation filter  
49. Parameter not tested. Guaranteed by design and characterization.  
Table 38. Dynamic electrical characteristics - temperature sense module  
Ratings  
Symbol  
fTUPDATE  
Min.  
Typ.  
Max.  
Unit  
Signal Update Rate(50)  
Notes  
1.0  
4.0  
kHz  
50. 1.0 kHz with Chopper Enabled, 4.0 kHz with Chopper Disabled (fixed decimeter = 128)  
3.6.2  
Dynamic electrical characteristics MCU die  
3.6.2.1  
NVM  
3.6.2.1.1  
Timing parameters  
The time base for all NVM program or erase operations is derived from the bus clock using the FCLKDIV register. The frequency of this  
derived clock must be set within the limits specified as fNVMOP. The NVM module does not have any means to monitor the frequency, and  
will not prevent program or erase operations at frequencies above or below the specified minimum. When attempting to program or erase  
the NVM module at a lower frequency, a full program or erase transition is not assured.  
The following sections provide equations which can be used to determine the time required to execute specific flash commands. All timing  
parameters are a function of the bus clock frequency, fNVMBUS. All program and erase times are also a function of the NVM operating  
frequency, fNVMOP. A summary of key timing parameters can be found in Table 39.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
23/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.6.2.1.1.1 Erase verify all blocks (blank check) (FCMD=0x01)  
The time required to perform a blank check on all blocks is dependent on the location of the first non-blank word starting at relative address  
zero. It takes one bus cycle per phrase to verify, plus a setup of the command. Assuming that no non-blank location is found, then the time  
to erase verify all blocks is given by:  
1
-------------------  
tcheck = 35500   
fNVMBUS  
3.6.2.1.1.2 Erase verify block (blank check) (FCMD=0x02)  
The time required to perform a blank check is dependent on the location of the first non-blank word starting at relative address zero. It  
takes one bus cycle per phrase to verify, plus a setup of the command.  
Assuming that no non-blank location is found, then the time to erase verify a P-Flash block is given by:  
1
-------------------  
tpcheck = 33500   
fNVMBUS  
Assuming that no non-blank location is found, then the time to erase verify a D-Flash block is given by:  
1
-------------------  
tdcheck = 2800   
fNVMBUS  
3.6.2.1.1.3 Erase verify p-flash section (FCMD=0x03)  
The maximum time to erase verify a section of P-Flash depends on the number of phrases being verified (NVP) and is given by:  
1
-------------------  
t  450 + NVP   
fNVMBUS  
3.6.2.1.1.4 Read once (FCMD=0x04)  
The maximum read once time is given by:  
1
-------------------  
t = 400   
fNVMBUS  
3.6.2.1.1.5 Program p-flash (FCMD=0x06)  
The programming time for a single phrase of four P-Flash words and the two seven-bit ECC fields is dependent on the bus frequency,  
fNVMBUS, as well as on the NVM operating frequency, fNVMOP  
.
The typical phrase programming time is given by:  
1
1
-----------------  
-------------------  
tppgm 164   
+ 2000   
fNVMOP  
fNVMBUS  
The maximum phrase programming time is given by:  
1
1
-----------------  
-------------------  
tppgm 164   
+ 2500   
fNVMOP  
fNVMBUS  
3.6.2.1.1.6 Program once (FCMD=0x07)  
The maximum time required to program a P-Flash Program Once field is given by:  
1
1
-----------------  
-------------------  
t 164   
+ 2150   
fNVMOP  
fNVMBUS  
3.6.2.1.1.7 Erase all blocks (FCMD=0x08)  
The time required to erase all blocks is given by:  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
24/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
1
1
-----------------  
-------------------  
tmass 100100   
+ 70000   
fNVMOP  
fNVMBUS  
3.6.2.1.1.8 Erase p-flash block (FCMD=0x09)  
The time required to erase the P-Flash block is given by:  
1
1
-----------------  
-------------------  
tpmass 100100   
+ 67000   
fNVMOP  
fNVMBUS  
3.6.2.1.1.9 Erase p-flash sector (FCMD=0x0A)  
The typical time to erase a 512-byte P-Flash sector is given by:  
1
1
-----------------  
-------------------  
tpera 20020   
+ 700   
fNVMOP  
fNVMBUS  
The maximum time to erase a 512-byte P-Flash sector is given by:  
1
1
-----------------  
-------------------  
tpera 20020   
+ 1400   
fNVMOP  
fNVMBUS  
3.6.2.1.1.10 Unsecure flash (FCMD=0x0B)  
The maximum time required to erase and unsecure the Flash is given by:  
(for 128 kByte P-Flash and 4.0 kByte D-Flash)  
1
1
-----------------  
-------------------  
tuns 100100   
+ 70000   
fNVMOP  
fNVMBUS  
3.6.2.1.1.11 Verify backdoor access key (FCMD=0x0C)  
The maximum verify back door access key time is given by:  
1
-------------------  
t = 400   
fNVMBUS  
3.6.2.1.1.12 Set user margin level (FCMD=0x0D)  
The maximum set user margin level time is given by:  
1
-------------------  
t = 350   
fNVMBUS  
3.6.2.1.1.13 Set field margin level (FCMD=0x0E)  
The maximum set field margin level time is given by:  
1
-------------------  
t = 350   
fNVMBUS  
3.6.2.1.1.14 Erase verify d-flash section (FCMD=0x10)  
The time required to Erase Verify D-Flash for a given number of words NW is given by:  
1
-------------------  
tdcheck  450 + NW   
fNVMBUS  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
25/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.6.2.1.1.15 Program d-flash (FCMD=0x11)  
D-Flash programming time is dependent on the number of words being programmed and their location with respect to a row boundary,  
since programming across a row boundary requires extra steps. The D-Flash programming time is specified for different cases: 1,2,3,4  
words and 4 words across a row boundary. The typical D-Flash programming time is given by the following equation, where NW denotes  
the number of words; BC=0 if no row boundary is crossed and BC=1, if a row boundary is crossed:  
1
1
-----------------  
-------------------  
tdpgm  14 + 54 NW+ 14 BC   
+ 500 + 525 NW+ 100 BC   
fNVMOP  
fNVMBUS  
The maximum D-Flash programming time is given by:  
1
1
-----------------  
-------------------  
tdpgm  14 + 54 NW+ 14 BC   
+ 500 + 750 NW + 100 BC   
fNVMOP  
fNVMBUS  
3.6.2.1.1.16 Erase d-flash sector (FCMD=0x12)  
Typical D-Flash sector erase times, expected on a new device where no margin verify fails occur, is given by:  
1
1
-----------------  
-------------------  
tdera 5025   
+ 700   
fNVMOP  
fNVMBUS  
Maximum D-Flash sector erase times is given by:  
1
1
-----------------  
-------------------  
tdera 20100   
+ 3400   
fNVMOP  
fNVMBUS  
The D-Flash sector erase time is ~5.0 ms on a new device and can extend to ~20 ms as the flash is cycled.  
Table 39. NVM timing characteristics (FTMRC)  
Rating  
Symbol  
fNVMBUS  
fNVMOP  
tMASS  
Min.  
1.0  
0.8  
Typ.(51)  
Max.(52)  
32.768  
1.05  
130  
Unit(53)  
MHz  
MHz  
ms  
Bus Frequency  
Operating Frequency  
1.0  
Erase All Blocks (mass erase) Time  
Erase Verify All Blocks (blank check) Time  
Unsecure Flash Time  
100  
tCHECK  
tUNS  
35500  
130  
tCYC  
ms  
100  
100  
P-flash Block Erase Time  
tPMASS  
tPCHECK  
tPERA  
130  
ms  
P-flash Erase Verify (blank check) Time  
P-flash Sector Erase Time  
33500  
26  
tCYC  
ms  
20  
P-flash Phrase Programming Time  
D-flash Sector Erase Time  
tPPGM  
226  
5(54)  
285  
s  
tDERA  
26  
ms  
D-flash Erase Verify (blank check) Time  
D-flash One Word Programming Time  
D-flash Two Word Programming Time  
D-flash Three Word Programming Time  
D-flash Four Word Programming Time  
D-flash Four Word Programming Time Crossing Row Boundary  
tDCHECK  
tDPGM1  
tDPGM2  
tDPGM3  
tDPGM4  
tDPGM4C  
2800  
107  
tCYC  
s  
100  
170  
241  
311  
328  
185  
s  
262  
s  
339  
s  
357  
s  
Notes  
51. Typical program and erase times are based on typical fNVMOP and maximum fNVMBUS  
52. Maximum program and erase times are based on minimum fNVMOP and maximum fNVMBUS  
53. tCYC = 1 / fNVMBUS  
54. Typical value for a new device  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
26/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.6.2.1.2  
NVM reliability parameters  
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process monitors, and burn-in to screen early  
life failures. The data retention and program/erase cycling failure rates are specified at the operating conditions noted. The program/erase  
cycle count on the sector is incremented every time a sector or mass erase event is executed.  
Table 40. NVM reliability characteristics(55)  
Rating  
Symbol  
tNVMRET  
nFLPE  
Min.  
20  
Typ.  
Max.  
Unit  
Years  
Cycles  
Years  
Data retention at an average junction temperature of TJAVG = 85 C(55) after up to  
100(57)  
100 K(58)  
100(57)  
10,000 program/erase cycles  
Program Flash number of program/erase cycles (-40 C TJ 150 C  
10 K  
5.0  
Data retention at an average junction temperature of TJAVG = 85 C(55) after up to  
tNVMRET  
50,000 program/erase cycles  
Data retention at an average junction temperature of TJAVG = 85 C(55) after up to  
10,000 program/erase cycles  
tNVMRET  
10  
100(57)  
Years  
Data retention at an average junction temperature of TJAVG = 85 C(55) after less than  
tNVMRET  
nFLPE  
20  
100(57)  
Years  
100 program/erase cycles  
Data Flash number of program/erase cycles (-40 C TJ 150C  
50 K  
500 K(58)  
Cycles  
Notes  
55. Conditions are shown in Table 10, unless otherwise noted  
56. TJAVG does not exceed 85 C in a typical temperature profile over the lifetime of a consumer, industrial, or automotive application.  
57. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25C using the  
Arrhenius equation. For additional information on how NXP defines Typical Data Retention, refer to Engineering Bulletin EB618  
58. Spec table quotes typical endurance evaluated at 25C for this product family. For additional information on how NXP defines Typical Endurance,  
refer to Engineering Bulletin EB619.  
3.6.2.2  
Phase locked loop  
Jitter definitions  
3.6.2.2.1  
With each transition of the feedback clock, the deviation from the reference clock is measured and input voltage to the VCO is adjusted  
accordingly.The adjustment is done continuously with no abrupt changes in the VCOCLK frequency. Noise, voltage, temperature, and  
other factors, cause slight variations in the control loop resulting in a clock jitter. This jitter affects the real minimum and maximum clock  
periods as illustrated in Figure 6.  
1
2
3
N-1  
N
0
t
min1  
t
nom  
t
max1  
t
minN  
t
maxN  
Figure 6. Jitter definitions  
The relative deviation of tNOM is at its maximum for one clock period, and decreases towards zero for larger number of clock periods (N).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
27/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Defining the jitter as:  
t
N  
t
N  
max  
min  
----------------------  
----------------------  
, 1 –  
JN= max 1 –  
N t  
N t  
nom  
nom  
For N < 100, the following equation is a good fit for the maximum jitter:  
j
1
-------  
JN=  
N
J(N)  
1
5
10  
20  
N
Figure 7. Maximum bus clock jitter approximation  
NOTE  
On timers and serial modules a prescaler will eliminate the effect of the jitter to a large extent.  
3.6.2.2.2  
Electrical characteristics for the PLL  
Table 41. PLL characteristics  
Rating  
Symbol  
fVCORST  
fVCO  
Min  
8
Typ  
Max  
Unit  
MHz  
MHz  
VCO Frequency During System Reset  
VCO Locking Range  
Lock Detection  
32  
65.536  
1.5  
32.768  
0
(59)  
LOCK  
UNL  
tLOCK  
j1  
|
%
(59)  
Un-lock Detection  
|
0.5  
2.5  
%
Time to Lock  
150 + 256/fREF  
1.2  
s  
Jitter Fit Parameter 1(60)  
%
Notes  
59. % deviation from target frequency  
60. fREF = 1.024 MHz, fBUS = 32.768 MHz equivalent fPLL = 65.536 MHz, REFRQ=00, SYNDIV=$1F, VCOFRQ=01, POSTDIV=$00  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
28/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.6.2.3  
Reset, oscillator and internal clock generation  
Table 42. Dynamic electrical characteristics - MCU clock generator  
Ratings  
Symbol  
fBUS  
Min.  
Typ.  
Max.  
32.768  
Unit  
MHz  
MHz  
Bus Frequency  
Internal Reference Frequency  
fIRC1M_TRIM  
1.024  
Internal Clock Frequency Tolerance(61),(62)  
Analog Option 2  
fTOL  
-1.0  
-1.2  
1.0  
1.2  
%
Analog Option 1  
Clock Frequency Tolerance with External Oscillator(63)  
Crystal Oscillator Range  
tTOLEXT  
fOSC  
-0.5  
4.0  
0.5  
16  
%
MHz  
ms  
Oscillator Start-up Time (LCP, 4.0 MHz)(64)  
Oscillator Start-up Time (LCP, 8.0 MHz)(64)  
Oscillator Start-up Time (LCP, 16 MHz)(64)  
Clock Monitor Failure Assert Frequency  
tUPOSC  
tUPOSC  
tUPOSC  
fCMFA  
2.0  
1.6  
1.0  
400  
10  
8.0  
5.0  
1000  
ms  
ms  
200  
kHz  
Notes  
61. -40 C TA125 C  
62. 1.3%, including lifetime drift  
63. Dependent on the external OSC  
64. These values apply for carefully designed PCB layouts with capacitors that match the crystal/resonator requirements  
3.6.2.4  
Reset characteristics  
Table 43. Reset and stop characteristics(65)  
Rating  
Symbol  
PWRSTL  
nRST  
Min.  
Typ.  
Max.  
Unit  
tVCORST  
tVCORST  
s  
Reset Input Pulse Width, minimum input time  
Startup from Reset  
2.0  
768  
50  
STOP Recovery Time  
tSTP_REC  
Notes  
65. Conditions are shown in Table 10 unless otherwise noted  
3.6.2.5  
SPI timing  
This section provides electrical parameters and ratings for the SPI. The measurement conditions are listed in Table 44.  
Table 44. Measurement conditions  
Description  
Value  
Full drive mode  
50  
Unit  
Drive mode  
(66)  
Load capacitance CLOAD , on all outputs  
pF  
Notes  
66. Conditions are shown in Table 10 unless otherwise noted  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
29/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.6.2.5.1  
Master mode  
The timing diagram for master mode with transmission format CPHA = 0 is depicted in Figure 8.  
SS  
(Output)  
2
1
12  
12  
13  
13  
3
SCK  
(CPOL = 0)  
4
(Output)  
4
SCK  
(CPOL = 1)  
(Output)  
5
6
MISO  
(Input)  
Bit MSB-1... 1  
9
MSB IN2  
10  
MSB OUT2  
LSB IN  
11  
MOSI  
(Output)  
Bit MSB-1... 1  
LSB OUT  
1. If configured as an output.  
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, bit 2... MSB.  
Figure 8. SPI master timing (CPHA = 0)  
The timing diagram for master mode with transmission format CPHA=1 is depicted in Figure 9.  
SS  
(Output)  
1
12  
12  
13  
13  
3
2
SCK  
(CPOL = 0)  
(Output)  
4
4
SCK  
(CPOL = 1)  
(Output)  
5
6
MISO  
(Input)  
Bit MSB-1... 1  
MSB IN2  
LSB IN  
11  
9
MOSI  
(Output)  
Port Data  
Bit MSB-1... 1  
Master LSB OUT  
Port Data  
Master MSB OUT2  
1.If configured as output  
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1,bit 2... MSB.  
Figure 9. SPI master timing (CPHA = 1)  
The timing characteristics for master mode are listed in Table 45.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
30/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 45. SPI master mode timing characteristics  
Num  
1
C
D
D
D
D
D
D
D
D
D
D
D
D
Characteristic  
Symbol  
fSCK  
tSCK  
tLEAD  
tLAG  
tWSCK  
tSU  
Min.  
1/2048  
2.0  
Typ.  
Max.  
12  
2048  
Unit  
fBUS  
tBUS  
tSCK  
tSCK  
tSCK  
ns  
SCK Frequency  
SCK Period  
1
2
Enable Lead Time  
Enable Lag Time  
1/2  
1/2  
1/2  
3
4
Clock (SCK) High or Low Time  
Data Setup Time (inputs)  
Data Hold Time (inputs)  
5
8.0  
8.0  
6
tHI  
ns  
9
Data Valid After SCK Edge  
Data Valid After SS Fall (CPHA = 0)  
Data Hold Time (outputs)  
Rise and Fall Time Inputs  
Rise and Fall Time Outputs  
tVSCK  
tVSS  
tHO  
29  
ns  
10  
11  
12  
13  
15  
ns  
20  
ns  
tRFI  
8.0  
8.0  
ns  
tRFO  
ns  
3.6.2.5.2  
Slave mode  
The timing diagram for slave mode with transmission format CPHA = 0 is depicted in Figure 10.  
SS  
(Input)  
1
12  
12  
13  
13  
3
SCK  
(CPOL = 0)  
(Input)  
4
4
2
SCK  
(CPOL = 1)  
10  
7
(Input)  
8
9
11  
11  
MISO  
(Output)  
See  
See  
Note  
Bit MSB-1... 1  
Slave LSB OUT  
Slave MSB  
6
Note  
5
MOSI  
(Input)  
Bit MSB-1... 1  
MSB IN  
LSB IN  
NOTE: Not defined  
Figure 10. SPI slave timing (CPHA = 0)  
The timing diagram for slave mode with transmission format CPHA = 1 is depicted in Figure 11.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
31/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
SS  
(Input)  
3
1
12  
13  
2
SCK  
(CPOL = 0)  
(Input)  
4
4
12  
11  
13  
SCK  
(CPOL = 1)  
(Input)  
8
9
MISO  
See  
Bit MSB-1... 1  
Slave MSB OUT  
Slave LSB OUT  
LSB IN  
Note  
(Output)  
7
5
6
MOSI  
(Input)  
MSB IN  
Bit MSB-1... 1  
NOTE: Not defined  
Figure 11. SPI slave timing (CPHA = 1)  
The timing characteristics for slave mode are listed in Table 46.  
Table 46. SPI slave mode timing characteristics  
Num  
1
C
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Characteristic  
Symbol  
fSCK  
tSCK  
tLEAD  
tLAG  
tWSCK  
tSU  
Min.  
DC  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
Typ.  
Max.  
14  
Unit  
fBUS  
fBUS  
fBUS  
fBUS  
fBUS  
ns  
SCK Frequency  
SCK Period  
1
2
Enable Lead Time  
3
Enable Lag Time  
4
Clock (SCK) High or Low Time  
Data Setup Time (inputs)  
Data Hold Time (inputs)  
Slave Access Time (time to data active)  
Slave MISO Disable Time  
Data Valid After SCK Edge  
Data Valid After SS Fall  
Data Hold Time (outputs)  
Rise and Fall Time Inputs  
Rise and Fall Time Outputs  
5
6
tHI  
ns  
7
tA  
20  
22  
ns  
8
tDIS  
ns  
(67)  
(67)  
9
tVSCK  
tVSS  
tHO  
29 + 0.5 tBUS  
ns  
10  
11  
12  
13  
29 + 0.5 tBUS  
ns  
20  
ns  
tRFI  
8.0  
8.0  
ns  
tRFO  
ns  
Notes  
67. 0.5 tBUS added due to internal synchronization delay  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
32/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
3.7  
Thermal protection characteristics  
Characteristics noted under conditions 3.5 V VSUP28 V, -40 C TA125 C, unless otherwise noted. Typical values noted reflect  
the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.  
Table 47. Thermal characteristics  
Ratings  
Symbol  
Min  
Typ  
Max  
Unit  
VDDH/VDDA/VDDX High Temperature Warning (HTI)  
T
Threshold  
Hysteresis  
HTI  
110  
125  
10  
140  
°C  
T
HTI_H  
VDDH/VDDA/VDDX Overtemperature Shutdown  
T
Threshold  
Hysteresis  
SD  
155  
150  
165  
10  
180  
180  
°C  
T
SD_H  
TLINSD  
LIN Overtemperature Shutdown  
165  
20  
°C  
°C  
TLINSD_HYS  
LIN Overtemperature Shutdown Hysteresis  
3.8  
Electromagnetic compatibility (EMC)  
All ESD testing is in conformity with the CDF-AEC-Q100 stress test qualification for automotive grade integrated circuits. During the device  
qualification, ESD stresses are performed for the Human Body Model (HBM), Machine Model (MM), Charge Device Model (CDM), as well  
as LIN transceiver specific specifications.  
A device will be defined as a failure, if after exposure to ESD pulses, the device no longer meets the device specification. Complete DC  
parametric and functional testing is performed per the applicable device specification at room temperature, followed by hot temperature,  
unless specified otherwise in the device specification. The immunity against transients for the LIN, PTB3/L0, VSENSE, ISENSEH,  
ISENSEL, and VSUP, is specified according to the LIN Conformance Test Specification - Section LIN EMC Test Specification (ISO7637-2),  
refer to the LIN Conformance Test Certification Report - available as separate document.  
Table 48. Electromagnetic compatibility  
Ratings  
Symbol  
Value/limit  
Unit  
ESD - Human Body Model (HBM) following AEC-Q100 / JESD22-A114   
(C  
= 100 pF, R  
- LIN (all GNDs shorted)  
- All other Pins  
= 1500 )  
ZAP  
ZAP  
VHBM  
kV  
±8.0  
±2.0  
ESD - Charged Device Model (CDM) following AEC-Q100  
Corner Pins  
All other Pins  
VCDM  
±750  
±500  
V
ESD - Machine Model (MM) following AEC-Q100 (C  
= 200 pF, R  
= 0 ), All Pins  
VMM  
ILAT  
±200  
±100  
V
ZAP  
ZAP  
Latch-up current at TA = 125 C(68)  
mA  
ESD GUN - LIN Conformance Test Specification(69), unpowered, contact discharge. (C  
=
ZAP  
150 pF, R  
= 330 ); LIN (no bus filter CBUS); VSENSE with serial RVSENSE; VSUP with  
± 6000  
± 6000  
V
V
ZAP  
CVSUP; PTB3 with serial RPTB3  
ESD GUN - IEC 61000-4-2 Test Specification(70), unpowered, contact discharge. (C  
=
ZAP  
150 pF, R  
= 330 ); LIN (no bus filter CBUS); VSENSE with serial RVSENSE; VSUP with  
ZAP  
CVSUP; PTB3 with serial RPTB3  
ESD GUN - ISO10605(70), unpowered, contact discharge, C  
= 150 pF,   
ZAP  
R
= 2.0 kLIN (no bus filter CBUS); VSENSE with serial RVSENSE; VSUP with CVSUP  
;
± 8000  
± 8000  
V
V
ZAP  
PTB3 with serial RPTB3  
ESD GUN - ISO10605(70), powered, contact discharge, C  
= 330 pF, R  
= 2.0 kLIN (no  
ZAP  
ZAP  
bus filter CBUS); VSENSE with serial RVSENSE; VSUP with CVSUP; PTB3 with serial RPTB3  
Notes  
68. Input Voltage Limit = -2.5 to 7.5 V  
69. Certification available on request  
70. Tested internally only, following the reference document test procedure.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
33/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4
Functional description and application information  
This chapter describes the MM912_637 dual die device functions on a block by block base. The following symbols are shown on all  
module cover pages to distinguish between the module location being the MCU die or the analog die:  
The documented module is physically located on the Analog die. This applies to Section 4.2, “MM912_637 - analog die  
overview" through Section 4.15, “Die to die interface - target".  
MCU  
ANALOG  
The documented module is physically located on the Microcontroller die. This applies to Section 4.2, “MM912_637 - analog  
die overview" through Section 4.26, “MCU - die-to-die initiator (9S12I128PIMV1)".  
Sections concerning both die or the complete device will not have a specific indication (e.g. Section 5, “MM912_637 - trimming").  
4.1  
Introduction  
Many types of electronic control units (ECUs) are connected to and supplied from the main car battery in modern cars. Depending on the  
cars mode of operation (drive, start, stop, standby), the battery must deliver different currents to the different ECUs. The vehicle power  
management has several sub-functions, like control of the set-point value of the power generator, dynamic load management during drive,  
start, stop, and standby mode.  
The Application Specific Integrated Circuit (ASIC) allows for two application circuits, depending on whether the bias current of the  
MM912_637 itself shall be included into the current measurement.  
Battery Plus Pole  
CBAT  
RSENSE  
Battery Minus Pole  
ISENSEL  
RSHUNT  
LIN  
LIN  
ISENSEH  
CLIN  
Chassis Ground  
Figure 12. Typical IBS application (device GND = chassis GND)  
Battery Plus Pole  
CBAT  
RSENSE  
Battery Minus Pole  
ISENSEL  
RSHUNT  
LIN  
LIN  
ISENSEH  
CLIN  
Chassis Ground  
Figure 13. Typical IBS application (device GND = battery minus)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
34/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The vehicle power system needs actual measurement data from the battery, mainly voltage, current, and temperature. Out of these  
measurement data, it needs calculated characteristics, such as dynamic internal battery resistance. Therefore, an intelligent battery  
sensor (IBS) module is required.  
To efficiently measure the battery voltage, current, and temperature, the IBS module is directly connected to and supplied from the battery.  
It is located directly on the negative pole of the battery; the supply of the IBS module comes from 'KL30'. The battery current is measured  
via a low-ohmic shunt resistor, connected between the negative pole of the battery and the chassis ground of the car. The battery voltage  
is measured at 'KL30'.  
The data communication between the IBS module and the higher level ECU is done via a LIN interface. The MM912_637 is able to  
measure its junction temperature. That temperature is the basis for a model in software that calculates the battery temperature out of the  
junction temperature. An optional external temperature sense input is provided as well.  
4.1.1  
Device register map  
Table 49 shows the device register memory map overview.  
Table 49. Device register memory map overview  
Address  
Module  
Size (Bytes)  
0x0000–0x0003  
0x0004–0x0009  
0x000A–0x000B  
0x000C–0x000D  
0x000E–0x000F  
0x0010–0x0015  
0x0016–0x0019  
0x001A–0x001B  
0x001C–0x001E  
0x001F  
PIM (port integration module)  
Reserved  
4
6
MMC (memory map control)  
PIM (port integration module)  
Reserved  
2
2
2
MMC (memory map control)  
Reserved  
8
2
Device ID register  
Reserved  
2
4
INT (interrupt module)  
DBG (debug module)  
Reserved  
1
0x0020–0x002F  
0x0030–0x0033  
0x0034–0x003F  
0x0040–0x00D7  
0x00D8–0x00DF  
0x00E0–0x00E7  
0x00E8–0x00EF  
0x00F0–0x00FF  
0x0100–0x0113  
0x0114–0x011F  
0x0120–0x017F  
0x0180–0x01EF  
0x01F0–0x01FC  
0x01FD–0x01FF  
0x0200-0x02FF  
0x0300–0x03FF  
16  
4
CPMU (clock and power management)  
Reserved  
12  
152  
8
D2DI (die 2 die initiator)  
Reserved  
32  
8
SPI (serial peripheral interface)  
Reserved  
32  
20  
12  
96  
112  
13  
3
FTMRC control registers  
Reserved  
PIM (port integration module)  
Reserved  
CPMU (clock and power management)  
Reserved  
D2DI (die 2 die initiator, blocking access window)  
D2DI (die 2 die initiator, non-blocking write window)  
256  
256  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
35/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
The reserved register space shown in Table 49 is not allocated to any module. This register space is  
reserved for future use. Writing to these locations has no effect. Read access to these locations  
returns a zero.  
4.1.2  
Detailed module register map  
Table 50 to Table 63 show the detailed module maps of the MM912_637.  
Table 50. 0x0000–0x0009 port integration module (PIM) 1 of 3  
Address  
Name  
Bit 7  
PA7  
0
Bit 6  
PA6  
0
Bit 5  
PA5  
0
Bit 4  
PA4  
0
Bit 3  
PA3  
0
Bit 2  
PA2  
0
Bit 1  
Bit 0  
R
0x0000  
PTA  
PA1  
PA0  
W
R
0x0001  
0x0002  
0x0003  
PTE  
DDRA  
PE1  
PE0  
W
R
DDRA7  
0
DDRA6  
0
DDRA5  
0
DDRA4  
0
DDRA3  
0
DDRA2  
0
DDRA1  
DDRA0  
W
R
DDRE  
DDRE1  
0
DDRE0  
0
W
R
0
0
0
0
0
0
0x0004-0x  
0009  
Reserved  
W
Table 51. 0x000A–0x000B memory map control (MMC) 1 of 2  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
0
0
0
0
0
0
0
0
0x000A  
Reserved  
W
R
0
0
0
0
0
0
0
0x000B  
MODE  
MODC  
W
Table 52. 0x000C–0x000F port integration module (PIM) map 2 of 3  
Address  
Name  
Bit 7  
Bit 6  
BKPUE  
0
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
PDPEE  
0
Bit 0  
R
0
0
0
0
0
0
0x000C  
PUCR  
W
R
0
0
0
0
0
0
0
0
0x000D  
RDRIV  
RDRD  
0
RDRC  
0
W
R
0
0
0x000E-0x  
000F  
Reserved  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
36/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 53. 0x0010–0x0019 memory map control (MMC) 2 of 2  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
0
0
0
0
0
0
0
0
0x0010  
Reserved  
W
R
0x0011  
DIRECT  
Reserved  
PPAGE  
DP15  
0
DP14  
0
DP13  
0
DP12  
0
DP11  
0
DP10  
0
DP9  
0
DP8  
0
W
R
0x0012-0x  
0014  
W
R
0
0
0
0
0
0
0
0
0x0015  
PIX3  
0
PIX2  
0
PIX1  
0
PIX0  
0
W
R
0x0016-0x  
0019  
Reserved  
W
Table 54. 0x001A–0x001E miscellaneous peripheral  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
PARTIDH  
0x001A  
PARTIDH  
W
R
PARTIDL  
0x001B  
PARTIDL  
Reserved  
W
R
0
0
0
0
0
0
0
0
0x001C-0x  
001E  
W
Table 55. 0x001F interrupt module (S12SINT)  
R
0x001F  
IVBR  
IVB_ADDR[7:0]  
W
Table 56. 0x0020–0x002F debug module (S12XDBG)  
Address  
Name  
Bit 7  
Bit 6  
0
Bit 5  
Bit 4  
Bit 3  
DBGBRK  
0
Bit 2  
Bit 1  
Bit 0  
R
0
0
0x0020  
DBGC1  
ARM  
BDM  
0
COMRV  
W
R
TRIG  
0
TBF(71)  
0
0
SSF2  
SSF1  
0
SSF0  
0x0021  
0x0022  
0x0023  
0x0024  
0x0025  
DBGSR  
DBGTCR  
DBGC2  
W
R
0
0
0
0
TSOURCE  
0
TRCMOD  
TALIGN  
W
R
0
0
0
ABCM  
W
R
Bit 15  
Bit 7  
Bit 14  
Bit 6  
Bit 13  
Bit 5  
Bit 12  
Bit 4  
Bit 11  
Bit 3  
Bit 10  
Bit 2  
Bit 9  
Bit 1  
Bit 8  
Bit 0  
DBGTBH  
DBGTBL  
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
37/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 56. 0x0020–0x002F debug module (S12XDBG) (continued)  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
TBF(71)  
0
CNT  
0x0026  
DBGCNT  
W
R
0
0
0
0
0
0
0
0
0x0027  
0x0027  
DBGSCRX  
DBGMFR  
DBGACTL  
DBGBCTL  
DBGCCTL  
DBGXAH  
DBGXAM  
DBGXAL  
DBGADH  
DBGADL  
SC3  
0
SC2  
MC2  
SC1  
MC1  
SC0  
MC0  
W
R
W
R
0x0028(72)  
0x0028(73)  
0x0028(74)  
0x0029  
SZE  
SZ  
TAG  
TAG  
BRK  
BRK  
RW  
RW  
RWE  
RWE  
NDB  
0
COMPE  
COMPE  
COMPE  
Bit 16  
Bit 8  
W
R
SZE  
0
SZ  
0
W
R
0
TAG  
0
BRK  
0
RW  
0
RWE  
0
W
R
0
0
Bit 17  
W
R
0x002A  
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
9
1
W
R
0x002B  
Bit 0  
W
R
0x002C  
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
Bit 8  
W
R
0x002D  
Bit 0  
W
R
0x002E  
DBGADHM  
DBGADLM  
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
Bit 8  
Bit 0  
W
R
0x002F  
Notes  
W
71. This bit is visible at DBGCNT[7] and DBGSR[7]  
72. This represents the contents if the Comparator A control register is blended into this address.  
73. This represents the contents if the Comparator B control register is blended into this address.  
74. This represents the contents if the Comparator C control register is blended into this address.  
Table 57. 0x0034–0x003F Clock and Power Management (CPMU) 1 of 2  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
CPMU  
SYNR  
0x0034  
VCOFRQ[1:0]  
SYNDIV[5:0]  
W
R
0
0
CPMU  
REFDIV  
0x0035  
REFFRQ[1:0]  
REFDIV[3:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
38/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 57. 0x0034–0x003F Clock and Power Management (CPMU) 1 of 2 (continued)  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
0
0
0
CPMU  
POSTDIV  
0x0036  
POSTDIV[4:0]  
W
R
LOCK  
0
UPOSC  
0
0x0037  
0x0038  
0x0039  
0x003A  
0x003B  
0x003C  
0x003D  
0x003E  
0x003F  
CPMUFLG  
CPMUINT  
CPMUCLKS  
CPMUPLL  
CPMURTI  
CPMUCOP  
Reserved  
RTIF  
RTIE  
PORF  
0
LVRF  
0
LOCKIF  
ILAF  
0
OSCIF  
OSCIE  
W
R
LOCKIE  
0
W
R
0
RTI  
COP  
PLLSEL  
0
PSTP  
0
PRE  
0
PCE  
0
OSCSEL  
OSCSEL  
W
R
0
0
FM1  
FM0  
W
R
RTDEC  
RTR6  
RTR5  
RTR4  
0
RTR3  
0
RTR2  
RTR1  
RTR0  
W
R
0
WCOP  
0
RSBCK  
0
CR2  
0
CR1  
0
CR0  
0
W
R
WRTMASK  
0
0
0
0
0
W
R
0
0
0
0
0
0
Reserved  
W
R
0
0
6
0
5
0
4
0
3
0
2
0
1
0
CPMU  
ARMCOP  
W
Bit 7  
Bit 0  
Table 58. 0x00D8–0x00DF Die 2 Die Initiator (D2DI) 1 of 3  
Address  
Name  
Bit 7  
Bit 6  
D2DCW  
0
Bit 5  
D2DSWAI  
0
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
0
0
0
0x00D8  
D2DCTL0  
D2DEN  
D2DCLKDIV[1:0]  
W
R
0
0x00D9  
0x00DA  
0x00DB  
0x00DC  
0x000D  
0x00DE  
D2DCTL1  
D2DSTAT0  
D2DSTAT1  
D2DADRHI  
D2DADRLO  
D2DDATAHI  
D2DIE  
TIMOUT[3:0]  
W
R
ACKERF  
D2DBSY  
SZ8  
CNCLF  
TIMEF  
0
TERRF  
PARF  
PAR1  
PAR0  
ERRIF  
D2DIF  
W
R
0
0
0
0
0
0
0
0
0
0
W
R
RWB  
NBLK  
W
R
ADR[7:0]  
W
R
DATA[15:8]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
39/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 58. 0x00D8–0x00DF Die 2 Die Initiator (D2DI) 1 of 3 (continued)  
R
DATA[7:0]  
0x00DF  
D2DDATALO  
W
Table 59. 0x00E8–0x00EF serial peripheral interface (SPI)  
Address  
Name  
Bit 7  
SPIE  
0
Bit 6  
Bit 5  
SPTIE  
0
Bit 4  
Bit 3  
Bit 2  
CPHA  
0
Bit 1  
Bit 0  
R
0x00E8  
SPICR1  
SPE  
MSTR  
CPOL  
SSOE  
LSBFE  
W
R
0x00E9  
0x00EA  
0x00EB  
0x00EC  
0x00ED  
0x00EE  
0x00EF  
SPICR2  
SPIBR  
XFRW  
MODFEN  
BIDIROE  
0
SPISWAI  
SPC0  
W
R
0
SPPR2  
0
SPPR1  
SPTEF  
SPPR0  
MODF  
SPR2  
0
SPR1  
0
SPR0  
0
W
R
SPIF  
0
SPISR  
W
R
R15  
T15  
R7  
T7  
R14  
T14  
R6  
T6  
R13  
T13  
R5  
T5  
R12  
T12  
R4  
T4  
R11  
T11  
R3  
T3  
R10  
T10  
R2  
T2  
R9  
T9  
R1  
T1  
0
R8  
T8  
R0  
T0  
0
SPIDRH  
SPIDRL  
Reserved  
Reserved  
W
R
W
R
0
0
0
0
0
0
W
R
0
0
0
0
0
0
0
0
W
Table 60. 0x0100–0x0113 flash control & status register FTMRC  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
FDIV5  
RNV5  
Bit 4  
FDIV4  
RNV4  
Bit 3  
FDIV3  
RNV3  
Bit 2  
FDIV2  
RNV2  
Bit 1  
FDIV1  
SEC1  
Bit 0  
FDIV0  
SEC0  
R
FDIVLD  
0x0100  
FCLKDIV  
FDIVLCK  
KEYEN0  
W
R
KEYEN1  
0x0101  
0x0102  
0x0103  
0x0104  
0x0105  
0x0106  
FSEC  
FCCOBIX  
Reserved  
FCNFG  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
CCOBIX2  
0
CCOBIX1  
0
CCOBIX0  
0
W
R
0
W
R
0
0
0
0
CCIE  
0
IGNSF  
0
FDFD  
FSFD  
W
R
FERCNFG  
FSTAT  
DFDIE  
SFDIE  
W
R
MGBUSY  
RSVD  
MGSTAT1  
MGSTAT0  
CCIF  
ACCERR  
FPVIOL  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
40/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 60. 0x0100–0x0113 flash control & status register FTMRC (continued)  
R
0
0
RNV6  
0
0
0
0
0
0x0107  
0x0108  
0x0109  
0x010A  
0x010B  
FERSTAT  
FPROT  
DFDIF  
FPLS1  
DPS1  
SFDIF  
FPLS0  
DPS0  
W
R
FPOPEN  
DPOPEN  
CCOB15  
FPHDIS  
0
FPHS1  
0
FPHS0  
DPS3  
FPLDIS  
DPS2  
W
R
DFPROT  
FCCOBHI  
FCCOBLO  
Reserved  
FOPT  
W
R
CCOB14  
CCOB13  
CCOB12  
CCOB11  
CCOB10  
CCOB9  
CCOB8  
W
R
CCOB7  
0
CCOB6  
0
CCOB5  
0
CCOB4  
0
CCOB3  
0
CCOB2  
0
CCOB1  
0
CCOB0  
0
W
R
0x010C-0x  
010F  
W
R
NV7  
0
NV6  
0
NV5  
0
NV4  
0
NV3  
0
NV2  
0
NV1  
0
NV0  
0
0x0110  
W
R
0x0111-  
0x0113  
Reserved  
W
Table 61. 0x0120 port integration module (PIM) 2 of 2  
Address  
Name  
Bit 7  
PTIA7  
0
Bit 6  
PTIA6  
0
Bit 5  
PTIA5  
0
Bit 4  
PTIA4  
0
Bit 3  
PTIA3  
0
Bit 2  
PTIA2  
0
Bit 1  
Bit 0  
R
0x0120  
PTIA  
PTIA1  
PTIA0  
W
R
0x0121  
PTIE  
PTIE1  
0
PTIE0  
0
W
R
0
0
0
0
0
0
0x0122-  
0x017F  
Reserved  
W
Table 62. 0x01F0–0x01FF clock and power management (CPMU) 2of 2  
Address  
Name  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
R
0
0
0
0
0
0
0
0
0x01F0  
Reserved  
W
R
0
0
0
0
0
0
0
0
0
0
0
LVDS  
CPMU  
LVCTL  
0x01F1  
LVIE  
0
LVIF  
0
W
R
0
0
0x01F2-  
0x01F7  
Reserved  
W
R
CPMU  
IRCTRIMH  
0x01F8  
0x01F9  
TCTRIM[3:0]  
IRCTRIM[9:8]  
W
R
CPMU  
IRCTRIML  
IRCTRIM[7:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
41/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 62. 0x01F0–0x01FF clock and power management (CPMU) 2of 2 (continued)  
OSCPINS_  
R
EN  
0x01FA  
CPMUOSC  
OSCE  
0
OSCBW  
0
OSCFILT[4:0]  
0
W
R
0
0
0
0
0
0
0
0
0x01FB  
0x01FC  
CPMUPROT  
Reserved  
PROT  
0
W
R
0
0
0
W
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
R
W
R
0
0
0
0
0
0
0
0
HTIEM  
HTIE  
HTF  
UVIEM  
UVIE  
UVF  
HWRM  
0
0
PFM[1:0]  
PF[1:0]  
OPMM[1:0]  
PCR_CTL  
PCR Control Register  
0x00  
0
0
OPM[1:0]  
W
R
HWR  
HWRF  
PCR_SR (hi)  
WDRF  
HVRF  
LVRF  
WULTCF  
WLPMF  
0x02  
0x03  
PCR Status Register  
W
Write 1 will clear the flags  
WUPTB3 WUPTB2 WUPTB1 WUPTB0  
WUAHTH  
F
PCR_SR (lo)  
R
WUCTHF WUCALF WULINF  
F
F
F
F
PCR Status Register  
W
R
Write 1 will clear the flags  
W
R
PCR_PRESC  
PCR 1.0 ms prescaler  
0x04  
PRESC[15:0]  
W
R
PCR_WUE (hi)  
Wake-up Enable Register  
PCR_WUE (lo)  
0x06  
0x07  
WUAHTH WUCTH  
WUCAL  
0
WULIN  
0
WUPTB3 WUPTB2 WUPTB1 WUPTB0  
W
R
0
0
0
0
0
WULTC  
Wake-up Enable Register  
INT_SRC (hi)  
W
R
TOV  
CH3  
CH2  
CAL  
0
CH1  
LTC  
0
CH0  
CVMI  
LTI  
RX  
HTI  
TX  
UVI  
ERR  
0x08  
Interrupt source register  
INT_SRC (lo)  
W
R
0
0
0
0
0
0
0x09  
Interrupt source register  
INT_VECT  
W
R
IRQ[3:0]  
0x0A  
Interrupt vector register  
W
R
0
0
0
0
0
0
0x0B  
Reserved  
W
R
INT_MSK (hi)  
Interrupt mask register  
INT_MSK (lo)  
0x0C  
TOVM  
0
CH3M  
0
CH2M  
CALM  
CH1M  
LTCM  
CH0M  
CVMM  
LTIM  
RXM  
HTIM  
TXM  
UVIM  
W
R
0x0D  
ERRM  
Interrupt mask register  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
42/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
4
11  
3
10  
9
1
8
0
7
6
5
2
TRIM_ALF (hi)  
R
W
R
PRDF  
0
0
APRESC[12:8]  
0x0E  
Trim for accurate 1.0 ms low freq  
clock  
TRIM_ALF (lo)  
APRESC[7:0]  
0x0F  
0x10  
Trim for accurate 1.0 ms low freq  
clock  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
WDTOM[2:0]  
WDTO[2:0]  
WDOFF  
WD_CTL  
Watchdog control register  
Reserved  
0
W
R
WD_SR  
0
0
WDWO  
0
0x12  
0x13  
0x14  
0x15  
0x16  
0x17  
0x18  
0x19  
0x1A  
0x1B  
0x1C  
0x1D  
0x1E  
Watchdog status register  
W
R
0
0
Reserved  
W
R
WD_RR  
WDR[7:0]  
Watchdog rearm register  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
W
R
W
R
W
R
SCIBD (hi)  
SCI Baud Rate Register  
SCIBD (lo)  
LBKDIE RXEDGIE  
SBR12  
SBR4  
M
SBR11  
SBR10  
SBR2  
ILT  
SBR9  
SBR1  
PE  
SBR8  
SBR0  
PT  
W
R
SBR7  
SBR6  
0
SBR5  
RSRC  
SBR3  
0
SCI Baud Rate Register  
SCIC1  
W
R
LOOPS  
SCI Control Register 1  
SCIC2  
W
R
TIE  
TCIE  
TC  
RIE  
ILIE  
TE  
RE  
NF  
RWU  
FE  
SBK  
PF  
SCI Control Register 2  
SCIS1  
W
R
TDRE  
RDRF  
IDLE  
OR  
SCI Status Register 1  
SCIS2  
W
R
0
RAF  
LBKDIF  
R8  
RXEDGIF  
T8  
RXINV  
TXINV  
RWUID  
ORIE  
BRK13  
NEIE  
LBKDE  
FEIE  
SCI Status Register 2  
SCIC3  
W
R
TXDIR  
PEIE  
SCI Control Register 3  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
43/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
SCID  
SCI Data Register  
TIOS  
R
W
R
R7  
R6  
R5  
R4  
R3  
R2  
R1  
R0  
0x1F  
T7  
0
T6  
0
T5  
0
T4  
0
T3  
T2  
T1  
T0  
0x20  
IOS3  
IOS2  
IOS1  
IOS0  
Timer Input Capture/Output  
Compare Select  
W
CFORC  
Timer Compare Force Register  
OC3M  
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x21  
0x22  
0x23  
0x24  
0x25  
0x26  
0x27  
0x28  
0x29  
0x2A  
0x2B  
0x2C  
0x2D  
FOC3  
FOC2  
FOC1  
FOC0  
OC3M3  
OC3D3  
OC3M2  
OC3D2  
OC3M1  
OC3D1  
OC3M0  
OC3D0  
Output Compare 3 Mask Register  
OC3D  
W
R
Output Compare 3 Data Register  
TCNT (hi)  
W
R
Timer Count Register  
TCNT (lo)  
W
R
TCNT[15:0]  
Timer Count Register  
TSCR1  
W
R
0
0
0
0
0
0
0
0
TEN  
0
TFFCA  
0
Timer System Control Register 1  
TTOV  
W
R
TOV3  
OM1  
TOV2  
OL1  
TOV1  
OM0  
TOV0  
OL0  
Timer Toggle Overflow Register  
TCTL1  
W
R
OM3  
OL3  
OM2  
OL2  
Timer Control Register 1  
TCTL2  
W
R
EDG3B  
0
EDG3A  
0
EDG2B  
0
EDG2A  
0
EDG1B  
C3I  
EDG1A  
C2I  
EDG0B  
C1I  
EDG0A  
C0I  
Timer Control Register 2  
TIE  
W
R
Timer Interrupt Enable Register  
TSCR2  
W
R
0
0
0
0
0
0
0
0
0
TOI  
0
TCRE  
PR2  
PR1  
PR0  
Timer System Control Register 2  
TFLG1  
W
R
C3F  
0
C2F  
0
C1F  
0
C0F  
0
Main Timer Interrupt Flag 1  
TFLG2  
W
R
TOF  
Main Timer Interrupt Flag 2  
TC0 (hi)  
W
R
0x2E  
0x2F  
Timer Input Capture/Output  
Compare Register 0  
W
R
TC0[15:0]  
TC0 (lo)  
Timer Input Capture/Output  
Compare Register 0  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
44/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
7
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
8
0
TC1 (hi)  
R
W
R
0x30  
Timer Input Capture/Output  
Compare Register 1  
TC1[15:0]  
TC2[15:0]  
TC3[15:0]  
TC1 (lo)  
0x31  
0x32  
0x33  
0x34  
0x35  
Timer Input Capture/Output  
Compare Register 1  
W
R
TC2 (hi)  
Timer Input Capture/Output  
Compare Register 2  
W
R
TC2 (lo)  
Timer Input Capture/Output  
Compare Register 2  
W
R
TC3 (hi)  
Timer Input Capture/Output  
Compare Register 3  
W
R
TC3 (lo)  
Timer Input Capture/Output  
Compare Register 3  
W
TIMTST  
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x36  
0x37  
0x38  
0x39  
0x3A  
0x3B  
TCBYP  
0
Timer Test Register  
Reserved  
W
R
LTC_CTL (hi)  
Life Time Counter control register  
LTC_CTL (lo)  
0
0
0
0
0
0
W
R
LTCIEM  
LTCEM  
LTCIE  
LTCE  
0
Life Time Counter control register  
LTC_SR  
W
R
LTCOF  
1 will clr  
0
Life Time Counter status register  
W
R
0
Reserved  
W
R
W
R
LTC_CNT1  
Life Time Counter Register  
0x3C  
0x3E  
LTC[31:16]  
LTC[15:0]  
W
R
W
R
LTC_CNT0  
Life Time Counter Register  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
45/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
R
W
R
0
0
0
0
0
0
0
0
DIR2M  
DIR2  
0
DIR1M  
DIR1  
0
DIR0M  
DIR0  
0
PE3M  
PE2M  
PE1M  
PE0M  
GPIO_CTL  
GPIO control register  
0x40  
0
0
0
0
PE3  
PE2  
PE1  
PE0  
W
R
GPIO_PUC  
GPIO pull up/down configuration  
GPIO_DATA  
0x42  
0x43  
0x44  
0x45  
0x46  
0x47  
0x48  
0x49  
0x4A  
0x4B  
0x4C  
0x4D  
0x4E  
0x4F  
PDE3  
PD3  
PUE2  
PD2  
PUE1  
PD1  
PUE0  
PD0  
W
R
0
0
0
GPIO port data register  
GPIO_IN0  
W
R
0
TCAP3  
TCAP2  
TCAP1  
TCAP0  
SCIRX  
SCITX  
SCIRX  
SCITX  
SCIRX  
SCITX  
LINTX  
LINRX  
LINTX  
LINRX  
LINTX  
Port 0 input configuration  
GPIO_OUT0  
W
R
0
PTBX0  
0
WKUP  
0
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
Port 0 output configuration  
GPIO_IN1  
W
R
TCAP3  
TCAP2  
TCAP1  
TCAP0  
Port 1 input configuration  
GPIO_OUT1  
W
R
0
PTBX1  
0
WKUP  
0
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
Port 1 output configuration  
GPIO_IN2  
W
R
TCAP3  
TCAP2  
TCAP1  
TCAP0  
Port 2 input configuration  
GPIO_OUT2  
W
R
0
PTBX2  
0
WKUP  
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
LINRX  
0
Port 2 output configuration  
GPIO_IN3  
W
R
PTWU  
0
PTWU  
0
TCAP3  
0
TCAP2  
0
TCAP1  
0
TCAP0  
0
Port 3 input configuration  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
W
R
W
R
W
R
0
0
0
0
W
R
OTIEM  
TXDM  
LVSDM  
ENM  
SRSM[1:0]  
LIN_CTL  
LIN control register  
0x50  
OTIE  
TXD  
LVSD  
EN  
SRS[1:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
46/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
LIN_SR (hi)  
LIN status register  
LIN_SR (lo)  
R
W
R
OT  
0
HF  
0
UV  
0
0
0
0x52  
Write 1 will clear the flags  
RDY  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
RX  
TX  
0x53  
0x54  
0x55  
0x56  
0x57  
LIN status register  
LIN_TX  
W
R
0
0
0
0
FROMPT  
B
FROMSCI  
LIN transmit line definition  
LIN_RX  
W
R
TOPTB  
0
TOSCI  
0
LIN receive line definition  
W
R
Reserved  
Reserved  
W
R
0
0
W
R
0
0
0
0
W
R
AHCRM  
0
OPTEM  
OPENEM CVMIEM ETMENM ITMENM  
VMENM  
CMENM  
ACQ_CTL  
Acquisition control register  
0x58  
OPTE  
PGAG  
OPENE  
VMOW  
CVMIE  
CMOW  
ETMEN  
ETM  
ITMEN  
ITM  
VMEN  
VM  
CMEN  
CM  
W
R
AHCR  
AVRF  
ACQ_SR (hi)  
Acquisition status register  
ACQ_SR (lo)  
0x5A  
0x5B  
W
R
Write 1 will clear the flags  
OPEN  
0
0
0
0
0
VTH  
0
ETCHOP  
ITCHOP  
VCHOP  
CCHOP  
Acquisition status register  
W
R
0
0
0
0
ETCHOP  
M
CVCHOP  
M
W
TCOMPM VCOMPM CCOMPM LPFENM  
ITCHOPM  
AGENM  
ACQ_ACC1  
Acquisition chain control 1  
0x5C  
0x5E  
R
W
R
TCOMP  
VCOMP  
CCOMP  
0
LPFEN  
0
ETCHOP  
0
ITCHOP CVCHOP  
AGEN  
0
0
0
0
0
W
R
ZEROM  
ECAPM  
TADCGM VADCGM CADCGM  
TDENM  
VDENM  
CDENM  
ACQ_ACC0  
Acquisition chain control 0  
ZERO  
0
ECAP  
0
TADCG  
0
VADCG  
0
CADCG  
0
TDEN  
VDEN  
CDEN  
W
R
ACQ_DEC  
Decimation rate  
ACQ_BGC  
0x60  
0x61  
0x62  
0x63  
DEC[2:0]  
BG2EN  
W
R
0
0
0
0
BG3EN  
BG1EN  
BGADC[1:0]  
BGLDO  
0
BandGap control  
ACQ_GAIN  
W
R
0
0
IGAIN[2:0]  
PGA gain  
W
R
ACQ_GCB  
D[7:0]  
GCB threshold  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
47/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
7
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
8
0
ACQ_ITEMP (hi)  
R
W
R
ITEMP[15:8]  
0x64  
Internal temperature  
measurement  
ACQ_ITEMP (lo)  
ITEMP[7:0]  
EEMP[15:8]  
EEMP[7:0]  
0x65  
0x66  
0x67  
Internal temperature  
measurement  
W
R
ACQ_ETEMP (hi)  
External temperature  
measurement  
W
R
ACQ_ETEMP (lo)  
External temperature  
measurement  
W
R
W
R
0
0
0
0
0
0
0
0
0x68  
0x69  
Reserved  
ACQ_CURR1  
CURR[23:16]  
CURR[15:8]  
CURR[7:0]  
VOLT[15:8]  
VOLT[7:0]  
0
Current measurement  
W
R
W
R
ACQ_CURR0  
Current measurement  
0x6A  
0x6C  
W
R
W
R
ACQ_VOLT  
Voltage measurement  
W
R
ACQ_LPFC  
0
0
0
0
0
0
0x6E  
0x6F  
LPFC[3:0]  
Low pass filter coefficient number  
W
R
0
0
0
0
0
Reserved  
W
R
ACQ_TCMP  
Low power trigger current  
measurement period  
W
R
0x70  
0x72  
TCMP[15:0]  
W
R
ACQ_THF  
THF[7:0]  
Low power current threshold  
filtering period  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x73  
0x74  
Reserved  
ACQ_CVCR (hi)  
0
0
I and V chopper control register  
W
DBTM[1:0]  
IIRCM[2:0]  
PGAFM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
48/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
5
12  
4
11  
3
10  
2
9
1
8
0
7
6
ACQ_CVCR (lo)  
I and V chopper control register  
ACQ_CTH  
R
W
R
0
0
0x75  
DBT[1:0]  
IIRC[2:0]  
PGAF  
0x76  
0x77  
0x78  
0x79  
0x7A  
0x7B  
0x7C  
0x7D  
0x7E  
0x7F  
0x80  
0x81  
0x82  
0x83  
0x84  
0x85  
CTH[7:0]  
Low power current threshold  
W
R
0
0
0
0
0
0
0
0
0
Reserved  
W
R
ACQ_AHTH1 (hi)  
Low power Ah counter threshold  
ACQ_AHTH1 (lo)  
W
R
AHTH[30:16]  
AHTH[15:0]  
Low power Ah counter threshold  
ACQ_AHTH0 (hi)  
W
R
Low power Ah counter threshold  
ACQ_AHTH0 (lo)  
W
R
Low power Ah counter threshold  
ACQ_AHC1 (hi)  
W
R
AHC[31:24]  
AHC[23:16]  
AHC[15:8]  
AHC[7:0]  
Low power Ah counter  
ACQ_AHC1 (lo)  
W
R
Low power Ah counter  
ACQ_AHC0 (hi)  
W
R
Low power Ah counter  
ACQ_AHC0 (lo)  
W
R
Low power Ah counter  
LPF_A0 (hi)  
W
R
A0 filter coefficient  
LPF_A0 (lo)  
W
R
A0[15:0]  
A1[15:0]  
A2[15:0]  
A0 filter coefficient  
LPF_A1 (hi)  
W
R
A1 filter coefficient  
LPF_A1 (lo)  
W
R
A1 filter coefficient  
LPF_A2 (hi)  
W
R
A2 filter coefficient  
LPF_A2 (lo)  
W
R
A2 filter coefficient  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
49/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
7
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
8
0
LPF_A3 (hi)  
A3 filter coefficient  
LPF_A3 (lo)  
R
W
R
0x86  
A3[15:0]  
A4[15:0]  
A5[15:0]  
A6[15:0]  
A7[15:0]  
A8[15:0]  
A9[15:0]  
A10[15:0]  
A11[15:0]  
0x87  
0x88  
0x89  
0x8A  
0x8B  
0x8C  
0x8D  
0x8E  
0x8F  
0x90  
0x91  
0x92  
0x93  
0x94  
0x95  
0x96  
0x97  
A3 filter coefficient  
LPF_A4 (hi)  
W
R
A4 filter coefficient  
LPF_A4 (lo)  
W
R
A4 filter coefficient  
LPF_A5 (hi)  
W
R
A5 filter coefficient  
LPF_A5 (lo)  
W
R
A5 filter coefficient  
LPF_A6 (hi)  
W
R
A6 filter coefficient  
LPF_A6 (lo)  
W
R
A6 filter coefficient  
LPF_A7 (hi)  
W
R
A7 filter coefficient  
LPF_A7 (lo)  
W
R
A7 filter coefficient  
LPF_A8 (hi)  
W
R
A8 filter coefficient  
LPF_A8 (lo)  
W
R
A8 filter coefficient  
LPF_A9 (hi)  
W
R
A9 filter coefficient  
LPF_A9 (lo)  
W
R
A9 filter coefficient  
LPF_A10 (hi)  
W
R
A10 filter coefficient  
LPF_A10 (lo)  
W
R
A10 filter coefficient  
LPF_A11 (hi)  
W
R
A11 filter coefficient  
LPF_A11 (lo)  
W
R
A11 filter coefficient  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
50/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
7
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
8
0
LPF_A12 (hi)  
A12 filter coefficient  
LPF_A12 (lo)  
R
W
R
0x98  
A12[15:0]  
A13[15:0]  
A14[15:0]  
A15[15:0]  
0x99  
0x9A  
0x9B  
0x9C  
0x9D  
0x9E  
0x9F  
A12 filter coefficient  
LPF_A13 (hi)  
W
R
A13 filter coefficient  
LPF_A13 (lo)  
W
R
A13 filter coefficient  
LPF_A14 (hi)  
W
R
A14 filter coefficient  
LPF_A14 (lo)  
W
R
A14 filter coefficient  
LPF_A15 (hi)  
W
R
A15 filter coefficient  
LPF_A15 (lo)  
W
R
A15 filter coefficient  
W
R
0
0
0
0
0
0
0
W
R
BGCALM[1:0]  
PGAZM  
PGAOM  
DIAGVM  
DIAGIM  
CALIEM  
CALIE  
COMP_CTL  
Compensation control register  
0xA0  
BGCAL[1:0]  
PGAZ  
0
PGAO  
DIAGV  
0
DIAGI  
0
W
R
COMP_SR  
Compensation status register  
COMP_TF  
0
0
BGRF  
PGAOF  
0
CALF  
0xA2  
0xA3  
W
R
Write 1 will clear the flags  
0
0
0
0
TMF[2:0]  
Temperature filtering period  
W
R
W
R
COMP_TMAX  
Max temp before recalibration  
0xA4  
0xA6  
TCMAX[15:0]  
TCMIN[15:0]  
W
R
W
R
COMP_TMIN  
Min temp before recalibration  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0xA8  
0xA9  
Reserved  
Reserved  
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
51/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
7
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
8
0
COMP_VO  
Offset voltage compensation  
COMP_IO  
R
W
R
0xAA  
VOC[7:0]  
COC[7:0]  
0xAB  
0xAC  
Offset current compensation  
W
R
0
0
0
0
0
0
VSGC[9:8]  
COMP_VSG  
Gain voltage compensation  
vsense channel  
W
R
VSGC[7:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0xAE  
0xAF  
Reserved  
Reserved  
W
R
W
R
IGC4[9:8]  
IGC8[9:8]  
IGC16[9:8]  
IGC32[9:8]  
IGC64[9:8]  
W
R
COMP_IG4  
Gain current compensation 4  
0xB0  
0xB2  
0xB4  
0xB6  
0xB8  
IGC4[7:0]  
IGC8[7:0]  
IGC16[7:0]  
IGC32[7:0]  
IGC64[7:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
COMP_IG8  
Gain current compensation 8  
W
R
W
R
COMP_IG16  
Gain current compensation 16  
W
R
W
R
COMP_IG32  
Gain current compensation 32  
W
R
W
R
COMP_IG64  
Gain current compensation 64  
W
R
IGC128[9:8]  
W
R
COMP_IG128  
Gain current compensation 128  
0xBA  
IGC128[7:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
52/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
1
8
0
7
6
5
4
3
2
R
W
R
0
0
0
0
0
0
IGC256[9:8]  
COMP_IG256  
Gain current compensation 256  
0xBC  
IGC256[7:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
IGC512[9:8]  
W
R
COMP_IG512  
Gain current compensation 512  
0xBE  
0xC0  
0xC2  
0xC4  
0xC6  
0xC8  
0xCA  
IGC512[7:0]  
W
R
0
PGAOC4[10:8]  
W
R
COMP_PGAO4  
Offset PGA compensation 4  
PGAOC4[7:0]  
W
R
0
0
PGAOC8[10:8]  
PGAOC16[10:8]  
PGAOC32[10:8]  
PGAOC64[10:8]  
PGAOC128[10:8]  
PGAOC256[10:8]  
W
R
COMP_PGAO8  
Offset PGA compensation 8  
PGAOC8[7:0]  
W
R
0
0
W
R
COMP_PGAO16  
Offset PGA compensation 16  
PGAOC16[7:0]  
W
R
0
0
W
R
COMP_PGAO32  
Offset PGA compensation 32  
PGAOC32[7:0]  
W
R
0
0
W
R
COMP_PGAO64  
Offset PGA compensation 64  
PGAOC64[7:0]  
W
R
0
0
W
R
COMP_PGAO128  
Offset PGA compensation 128  
PGAOC128[7:0]  
W
R
0
0
W
R
COMP_PGAO256  
Offset PGA compensation 256  
0xCC  
PGAOC256[7:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
53/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
2
9
1
8
0
7
6
5
4
3
R
W
R
0
0
0
0
0
PGAOC512[10:8]  
COMP_PGAO512  
Offset PGA compensation 512  
0xCE  
PGAOC512[7:0]  
ITOC[7:0]  
W
R
COMP_ITO  
0xD0  
0xD1  
0xD2  
Internal temp. offset  
compensation  
W
COMP_ITG  
Internal temp. gain compensation  
COMP_ETO  
R
W
R
ITGC[7:0]  
ETOC[7:0]  
External temp. offset  
compensation  
W
R
COMP_ETG  
0xD3  
ETGC[7:0]  
External temp. gain  
compensation  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0xD4  
0xD5  
0xD6  
0xD7  
0xD8  
0xD9  
0xDA  
0xDB  
0xDC  
0xDD  
0xDE  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
54/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
R
W
R
0
0
0
0
0
0
0
0
0xDF  
Reserved  
TRIM_BG0 (hi)  
Trim bandgap 0  
TRIM_BG0 (lo)  
Trim bandgap 0  
TRIM_BG1 (hi)  
Trim bandgap 1  
TRIM_BG1 (lo)  
Trim bandgap 1  
TRIM_BG2 (hi)  
Trim bandgap 2  
TRIM_BG2 (lo)  
Trim bandgap 2  
TRIM_LIN  
0
0
0
0
0xE0  
0xE1  
0xE2  
0xE3  
0xE4  
0xE5  
0xE6  
0xE7  
0xE8  
0xE9  
0xEA  
0xEB  
0xEC  
0xED  
0xEE  
0xEF  
0xF0  
TCIBG2[2:0]  
IBG2[2:0]  
TCIBG1[2:0]  
IBG1[2:0]  
W
R
W
R
UBG3  
0
DBG3  
0
TCBG2[2:0]  
0
TCBG1[2:0]  
SLPBG[2:0]  
W
R
0
0
W
R
V1P2BG2[3:0]  
V2P5BG2[3:0]  
V1P2BG1[3:0]  
V2P5BG1[3:0]  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
LIN  
Trim LIN  
W
R
TRIM_LVT  
LVT  
Trim low voltage threshold  
TRIM_OSC (hi)  
Trim LP oscillator  
TRIM_OSC (lo)  
Trim LP oscillator  
W
R
W
R
LPOSC[12:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
W
R
W
R
W
R
W
R
W
R
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
55/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 63. Analog die registers - 0x0200–0x02FF D2D blocking access (D2DI) 2 of 3/0x0300–0x03FF D2D non blocking access  
(D2DI) 3 of 3 (continued)  
Offset(75)  
Name  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
R
W
R
0
0
0
0
0
0
0
0
0xF1  
Reserved  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0xF2  
0xF3  
0xF4  
0xF5  
0xF6  
0xF7  
0xF8  
0xF9  
0xFA  
0xFB  
0xFC  
0xFD  
0xFE  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
0xFF  
W
Notes  
75. Register Offset with the “lo” address value not shown have to be accessed in 16-Bit mode. 8-Bit access will not function.  
4.2  
MM912_637 - analog die overview  
Introduction  
4.2.1  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
56/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The MM912_637 analog die implements all system base functionality to operate the integrated microcontroller, and delivers application  
specific input capturing.  
Analog  
VSUP  
Watchdog  
VDDA  
GPIO  
Oscillator  
Timer  
Bias  
SCI  
Regulator(s)  
Digital  
GNDA  
MMC  
LIN  
LIN  
LGND  
D2DCLK  
D2DINT  
MCU  
Die  
D2D  
Interface  
Wake Up /  
Power Down  
Fuse  
Box  
VFUSE  
GNDSUB  
ADCGND  
Gain and offset compensation  
Prog. Low pass filter  
Gain and offset  
compensation  
Interrupt  
Control  
DECV  
DECC  
RESET_A  
Test  
Interface  
TCLK  
Battery Voltage Battery Current  
Measurement Measurement  
Temperature  
Measurement  
TSUP  
TEST_A  
Figure 14. Analog die block overview  
The following chapters describe the analog die functionality on a module by module basis.  
4.2.2  
Analog die options  
NOTE  
This document describes the features and functions of Analog Option 2 (all modules available and  
tested). Beyond this chapter, there will be no additional note or differentiation between the different  
implementations.  
The following section describes the differences between analog die options 1 and 2.  
Table 64. Analog options  
Feature  
Analog option 1  
Analog option 2  
Cranking Mode  
Not Characterized or Tested  
Fully Characterized and Tested  
External Wake-up (PTB3/L0)  
No  
No  
No  
Yes  
Yes  
Yes  
External Temperature Sensor Option (VTEMP)  
Optional 2nd External Voltage Sense Input (VOPT)  
4.2.2.1  
Cranking mode  
For devices with Analog Option 1 (Cranking mode not characterized), the following considerations are to be made:  
4.2.2.1.1  
Data sheet considerations  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
57/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
In Analog Option 1 devices, Operation in Cranking mode is neither characterized not tested. All data sheet parameters and descriptions  
relating to Cranking mode operation apply to Analog Option 2 devices only.  
4.2.2.2  
External wake-up (PTB3/L0)  
For devices with Analog Option 1 (External Wake-up not available), the following considerations are to be made:  
4.2.2.2.1  
Register considerations  
Table 65. Wake-up enable register (PCR_WUE (hi))  
Offset (76) 0x06  
Access: User read/write  
1 0  
7
WUAHTH  
0
6
WUCTH  
0
5
WUCAL  
0
4
WULIN  
0
3
WUPTB3  
0
2
WUPTB2  
0
R
W
WUPTB1  
0
WUPTB0  
0
Reset  
Notes  
76. Offset related to 0x0200 for blocking access and 0x300 for non-blocking access within the global address space.  
For Analog Option 1 devices, WUPTB3 must be set to 0 (wake-up on a GPIO 3 event disabled).  
4.2.2.3  
External temperature sensor option (VTEMP)  
For devices with Analog Option 1 (External Temperature Sensor Option not available), the following considerations are to be made:  
4.2.2.3.1  
Pinout considerations  
Pin  
Pin name for option 2  
VTEMP  
Pin name for option 1  
Comment  
28  
29  
NC  
NC  
NC pin should be connected to GND  
Pin should be left unconnected  
TSUP  
4.2.2.3.2  
Register considerations  
Table 66. Acquisition control register (ACQ_CTL)  
Offset (77) (78)  
0x58  
,
Access: User read/write  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
0
9
0
8
0
R
W
AHCRM  
0
OPTEM  
0
OPENEM  
0
CVMIEM  
0
ETMENM  
0
ITMENM  
0
VMENM  
0
CMENM  
0
Reset  
7
0
6
OPTE  
0
5
OPENE  
0
4
CVMIE  
0
3
ETMEN  
0
2
ITMEN  
0
1
VMEN  
0
0
CMEN  
0
R
W
AHCR  
0
Reset  
Notes  
77. Offset related to 0x0200 for blocking access and 0x300 for non-blocking access within the global address space.  
78. This register is 16-bit access only.  
For Analog Option 1 devices, ETMEN must be set to 0 (external temperature measurement disabled).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
58/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.2.2.4  
Optional 2nd external voltage sense input (VOPT)  
For devices with Analog Option 1 (Optional 2nd External Voltage Sense Input not available), the following considerations are to be made:  
4.2.2.4.1  
Pinout considerations  
Pin  
28  
Pin name for option 2  
Pin name for option 1  
Comment  
VOPT  
NC  
NC pin should be connected to GND  
4.2.2.4.2  
Register considerations  
Table 67. Acquisition control register (ACQ_CTL)  
Offset (79) (80)  
0x58  
,
Access: User read/write  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
0
9
0
8
0
R
W
AHCRM  
0
OPTEM  
0
OPENEM  
0
CVMIEM  
0
ETMENM  
0
ITMENM  
0
VMENM  
0
CMENM  
0
Reset  
7
0
6
OPTE  
0
5
OPENE  
0
4
CVMIE  
0
3
ETMEN  
0
2
ITMEN  
0
1
VMEN  
0
0
CMEN  
0
R
W
AHCR  
0
Reset  
Notes  
79. Offset related to 0x0200 for blocking access and 0x300 for non-blocking access within the global address space.  
80. This register is 16-bit access only.  
For Analog Option 1 devices, OPTE must be set to 0 (VSENSE routed to ADC).  
4.3  
Analog die - power, clock and resets - PCR  
Introduction  
4.3.1  
The following chapter describes the MM912_637’s system base functionality primary location on the analog die. The chapter is divided in  
the following sections:  
1. 4.3.2, “Device operating modes"  
2. 4.3.3, “Power management"  
3. 4.3.4, “Wake-up sources"  
4. 4.3.5, “Device clock tree"  
5. 4.3.6, “System resets"  
6. 4.3.7, “PCR - memory map and registers"  
4.3.2  
Device operating modes  
The MM912_637 features three main operation modes: normal operation, stop mode, and sleep mode. The full signal conditioning and  
measurements are permanently running in normal operation mode. The total current consumption of the MM912_637 is reduced in the  
two low power modes.  
The analog die of the MM912_637 is still partially active and able to monitor the battery current, temperature, activities on the LIN interface  
and L0 terminal, during both low power modes.  
4.3.2.1  
Operating mode overview  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
59/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Normal Mode  
All device modules active  
Microcontroller fully supplied  
D2DCLK active analog die clock source  
Window watchdog clocked by the low power oscillator (LPCLK) to operate on independent clock  
Stop Mode  
MCU in low power mode, MCU regulator supply (VDDX) with reduced current capability  
D2D interface supply disabled (VDDH=OFF)  
Unused analog blocks disabled  
Watchdogs = OFF  
LIN wake-up, calibration request wake-up, cyclic wake-up, external wake-up, current threshold wake-up, and lifetime  
counter wake-up optional  
Current Measurement / current averaging and temperature measurement optional  
Sleep Mode  
MCU powered down (VDDH and VDDX = OFF)  
Unused Analog Blocks disabled  
Watchdogs = OFF  
LIN wake-up, calibration request wake-up, cyclic wake-up, external wake-up, current threshold wake-up, and lifetime  
counter wake-up optional  
Current measurement / current averaging and temperature measurement optional  
Intermediate Mode  
Every transition from Stop or Sleep into Normal mode will go through an intermediate mode where the analog die clock is  
not yet switched to the D2D clock. If required, the MM912_637 analog die can be put back to low power mode without  
changing the frequency domain.  
Reset Mode  
Every reset source within the analog die will bring the system into a Reset state  
Power On Reset Mode  
For both low voltage thresholds are defined to indicate a loss of internal state.  
Cranking Mode(81)  
Special Mode implemented to guarantee the RAM content being valid though very low power conditions.  
Notes  
81. Not available on all device derivatives  
4.3.2.2  
Operating mode transitions  
The device operating modes are controlled by the microcontroller, as well as external and internal wake-up sources. Figure 15 shows the  
basic principal.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
60/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
POR  
ANALOG: VDDL > VPORH  
MCU: VDDRX>VPORD  
ANALOG: VDDL < VPORL  
MCU: VDDRX<VPORA  
ANALOG: VDDL < VPORL  
MCU: VDDRX<VPORA  
RESET  
Cranking  
Event  
Cranking Mode1  
Reset Event  
gone  
Reset Event  
Cranking  
RESET  
Event  
RESET  
Event  
Cranking Event  
gone  
Event  
MCU  
Intermediate  
Mode  
Cranking  
Event  
Intermediate  
Mode  
Intermediate  
Mode  
Wake-up  
Event  
(MCU  
Normal Mode  
Wake-up  
Event  
MCU IRQ  
MCU  
Power On)  
MCU  
MCU  
MCU  
Stop Mode  
Sleep Mode  
1) Cranking Mode not available on all device derivatives  
Figure 15. Modes of operation - transitions  
4.3.2.3  
Power on reset - POR  
During system startup, or in any other case when MCU_VDD drops below VPORA (MCU), or VDDL drops below VPORL (analog die), a  
Power On Reset (POR) condition is reached. The MCU (PORF) / analog die (LVRF) will indicate this state, setting the corresponding  
power on reset flag. The primary consequence of entering POR is that the RAM or analog register content can no longer be guaranteed.  
4.3.2.4  
RESET - mode  
If any of the analog die reset conditions are present, the MM912_637 analog die will enter Reset mode. During that mode, the analog die  
will issue the RESET_A pin to be pulled down to reset the microcontroller die. Entering Reset mode will reset the analog die registers to  
their default values.  
The cause of the last reset is flagged in the PCR status register (PCR_SR (hi)).  
4.3.2.5  
Normal mode  
During Normal mode operation, all modules are operating and the microcontroller is fully supplied.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
61/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
(82)  
4.3.2.6  
Cranking mode  
A specific power down behavior has been implemented to allow the MCU memory (RAM) content to be guaranteed during very low supply  
voltage conditions. The difference between the device behavior, with or without the cranking mode feature enabled, is described in Section  
4.3.3.3, “Power up/power down behavior".  
Notes  
82. Not available on all device derivatives  
4.3.2.7  
Intermediate mode  
As the channel acquisition and the timer modules are switched to the LPCLK, while the MM912_637 is operating in one of the two low  
power modes, the Intermediate mode has been implemented, to be able to go back to low power mode without the transition into the D2D  
Clock domain.  
NOTE  
The flag indicating the last wake-up source must be cleared before re-entering low power mode!  
Once awakened, the MCU instructs the analog die to transit to Normal mode by writing “00” to the OPM bits in the PCR Control Register.  
See Figure 16 for details.  
STOP MODE  
SLEEP MODE  
VDDH = OFF  
VDDH & VDDX = OFF  
VDDX = Limited  
TIM / AQ = LPCLK  
TIM / AQ = LPCLK  
MCU = OFF  
MCU = STOP  
Wake-up  
Event  
Wake-up  
Event  
INTERMEDIATE MODE  
1. VDDH = ON  
INTERMEDIATE MODE  
1. VDDH & VDDX = ON  
2. MCU => Power On  
“01”  
“10”  
2. VDDX = Full  
3. MCU => IRQ  
(83)  
MCU can access D2D  
TIM / AQ are still on LPCLK domain  
(e.g. check Wake-up source)  
Write OPM[1:0] Bits in the PCR Control Register  
“00”  
NORMAL MODE  
TIM / AQ = based on D2D Clock  
Notes  
83. As the Life Time Counter has to be configured into normal mode (no access to LTC_CNT[1..0] is  
possible during intermediate mode), if not reconfigured it will continue to increment starting from 0.  
Figure 16. Low power mode to normal mode transition through the intermediate mode  
4.3.2.8  
Low-power modes  
In low power mode, the MM912_637 is still active to monitor the battery current (triggered current measurement for current threshold  
detection and current accumulator function), and activities on the LIN interface and wake-up inputs. A cyclic wake-up using timer module  
is implemented for timed wake-up. Temperature measurements are optional to detect an out of calibration condition.  
The Life Time counter is also incremented during Low Power mode, to issue a Wake-up on overflow. See Section 4.14, “Life time counter  
(LTC)" for additional details.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
62/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The average current consumption is reduced, and based on the actual low power mode, the active modules, and the wake-up timing.  
NOTE  
To avoid any lock condition, no analog die interrupt should be enabled or pending when entering  
LPM. To accomplish that condition, the analog die interrupts should be masked and served before  
writing the PCR_CTL register.  
The MCU interrupts should be enabled right before the STOP command, to avoid any interrupt to be  
handled in between.  
A wake-up from any of the low power modes will reset the window watchdog equal to a standard  
reset.  
4.3.2.8.1  
Sleep mode  
Writing the PCR Control Register (PCR_CTL) with OPM=10, the MM912_637 will enter Sleep mode with the configured wake-up sources  
(see Section 4.3.4, “Wake-up sources").  
NOTE  
The power supply to the MCU will be turned off during Sleep mode. To safely approach this condition,  
the MCU should be put into a safe state (e.g STOP).  
During Sleep mode, the only active voltage regulator is VDDL, supplying the low power oscillator (LPOSC), and the permanently supplied  
digital blocks.  
When an enabled wake-up condition occurs, the shutdown voltage regulators are re-enabled, and once their outputs are above reset  
threshold, the RESET_A signal is released, and the microcontroller will start its normal operation. The wake-up source is flagged in the  
PCR Status Register (PCR_SR (hi)).  
The microcontroller has to move from intermediate mode to Normal mode, by writing the OPM=00, to allow a controlled transition into the  
D2D Clock domain.  
4.3.2.8.2  
Stop mode  
Writing the PCR Control Register (PCR_CTL) with OPM=01, the MM912_637 analog die will enter Stop mode with the configured wake-up  
sources (see Section 4.3.4, “Wake-up sources"), after the D2DCLK signal has been stopped by the MCU die entering Stop.  
NOTE  
After writing the PCR Control Register (PCR_CTL) with OPM=01, the register content of the SCI  
(S08SCIV4) and TIMER (TIM16B4C) module registers are read only until Normal mode is entered  
again. This is important in case the MCU does not effectively enter STOP, due to an IRQ pending  
from one of the two blocks. (Having any analog die IRQ allowed when entering Low Power mode is  
not recommended).  
During Stop mode, the MM912_637 has the same behavior as during Sleep mode, except VDDX is still powered by the internal Clamp_5v,  
to supply the MCU STOP mode current. As this current is limited, the MCU die must be switched into STOP mode after sending the Stop  
command for the analog die.  
If any enabled wake up condition occurs, the shutdown voltage regulators are re-enabled, and once their outputs are above the reset  
threshold, VDDX is switched to the main regulator, an D2D interrupt (D2DINT) is issued to wake-up the MCU, and the microcontroller will  
continue its normal operation. The wake-up source is flagged in the PCR Status Register (PCR_SR (hi)).  
The microcontroller has to acknowledge the Normal mode by writing the OPM=00. This allows a controlled transition into the D2D Clock  
domain. If the clock domain transition is not required, the microcontroller may issue a sleep / stop mode entry instead (see Section 4.3.5,  
“Device clock tree" for details on the limitations during the intermediate state).  
At start up or after wake-up, it is required to wait to ensure the PLL is locked, if the PLL is enabled previous to accessing the analog die  
through the D2D interface.  
NOTE  
After writing the PCR Control Register (PCR_CTL) with OPM=01, writing OPM=00 (Normal mode) is  
allowed to wake-up the analog die. The reduced current capability of the MCU regulator supply  
(VDDX) has to be considered.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
63/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.3  
Power management  
To support the various operating modes and modules in the MM912_637, the following power management architecture has been  
implemented.  
POR  
VPORH / VPORL  
VDDL  
VDDL  
Flash  
LVRA  
VLVRAH / VLVRAL  
Clamp5v  
VDDF  
VDDA  
VDDX  
VDDA  
VDDX  
LVR  
VLVRA / VLVRD  
VDDRX  
D2D  
LVI  
VLVIA / VLVID  
VSUP  
LVRX  
VLVRXH / VLVRXL  
VDD  
UVI  
VUVIH / VUVIL  
VDDH  
VDDH  
POR  
VPORA / VPORD  
VDDD2D  
LVRH  
VLVRHH / VLVRHL  
Core  
MCU  
Analog Die  
Figure 17. System voltage monitoring  
4.3.3.1  
Detailed power block description  
See recommended external components under Section 2.2, “Recommended external components"”.  
4.3.3.1.1  
VSUP  
VSUP is the system power supply input, and must be reverse battery protected by an external diode. VSUP is monitored for undervoltage  
conditions (UVI). Once VSUP drops below V  
an undervoltage interrupt (LVI) is issued.  
UVIL  
NOTE  
If the device has the cranking mode feature enabled, the undervoltage threshold would be V  
UVCIL  
instead of V  
.
UVIL  
4.3.3.1.2  
VDDL  
VDDL is the low power 2.5 V digital supply voltage, supplying the permanently active blocks. It is based on the internal Clamp5v voltage  
and always on. It is available externally, but must not be connected to any load.  
4.3.3.1.3  
VDDX  
VDDX is the Normal mode 5.0 V regulator output, suppling the LIN block and the microcontroller via the VDDX pin. During STOP and  
SLEEP mode operation, the VDDX regulator is shut down (Clamp5v does supply the MCU during STOP mode).  
4.3.3.1.4  
VDDH  
VDDH is the Normal mode 2.5 V regulator output, suppling only active blocks during Normal mode and the MCU Die to Die Interface, via  
the VDDH terminal. The VDDH regulator is shut down during both low power modes.  
4.3.3.1.5  
VDDA  
VDDA is the 2.5 V analog supply voltage, active during Normal mode and I/T acquisitions. No external load must be connected to the  
VDDA terminal.  
4.3.3.2  
Power supply by module  
The following table summarized the active regulators vs. module for the different operating modes.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
64/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 68. Power supply by module  
Module/block  
VDDH  
VDDA  
VDDL  
VDDX  
(84)  
Gain Control Block (GCB)  
X
X
X
X
X
X
(85)  
Programmable Gain Amplifier (PGA)  
(85)  
I/T - ADC Converters  
(84)  
V - ADC Converters  
(85)  
Temperature Sensor  
(84)  
LIN  
X
X
(84)  
D2D  
X
X
(86)  
LPOSC  
X
X
(86)  
Permanent Digital  
(84)  
Normal Mode Digital  
Notes  
84. Enabled in Normal Mode only  
85. Enabled when a measuring in Low Power mode and always in Normal mode  
86. Permanently enabled  
4.3.3.3  
Power up/power down behavior  
Several system voltage monitors have been implemented in both die, to guarantee a defined power up and power down system behavior.  
See Figure 17 for the various sensing points. The individual threshold levels are specified in Table 16 for the analog die, and Table 25 for  
the microcontroller.  
NOTE  
To differentiate between the MCU and analog die thresholds, the following symbol scheme is defined:  
V
V
V
V
- MCU Assert Level (lower threshold for low voltage events)  
xxxxA  
xxxxD  
xxxxH  
xxxxL  
- MCU Deassert Level (higher threshold for low voltage events)  
- Analog Die High Threshold Level (deassert threshold for low voltage events)  
- Analog Die Low Threshold Level (assert threshold for low voltage events)  
4.3.3.4  
Low-voltage operation - cranking mode device option  
Based on the device option (“Cranking” or “Non-cranking”), the MM912_637 will behave different during “Loss of Power” conditions. The  
“Cranking” option is an option, allowing lower voltage operations to guarantee the MCU memory content during a standard cranking  
situation.  
As illustrated in Figure 18, the cranking mode is introduced to maintain both die in a STOP mode alike state. The MCU die will remain in  
STOP with the RAM content being guaranteed until the PORA level is reached for the VDDRX supply.  
The analog die will enter “Cranking Mode” upon the MCU command out of Normal Mode, or when it reaches V  
with the LVT bit set in the TRIM_LVT register.  
during STOP Mode,  
UVCIL  
NOTE  
Executing STOP with VSUP < V  
Mode.  
and LVT = 1, the MM912_637 will immediately enter Cranking  
UVCIL  
During Cranking Mode, the analog die will gate its internal oscillator to stop all ongoing acquisitions during the low power condition.  
Returning from Cranking mode will appear as a wake-up from undervoltage interrupt (UVI=1). The analog die will be in Intermediate mode  
after wake-up, and could be sent into Normal mode (Stop, Sleep), by writing the OPM bits.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
65/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Device with Cranking Mode Enabled  
Device with Cranking Mode Disabled  
Normal /  
Intermediate  
Mode  
Normal /  
Stop / Sleep  
Intermediate  
Mode  
Stop / Sleep  
Mode  
Mode  
High Precision  
Comparator always on  
in Normal /  
High Precision  
Comparator => ON  
Under Voltage IRQ  
(UVI) issued.  
Inactive during Stop /  
Sleep  
VUVIL  
Intermediate Mode  
Handle IRQ, prepare  
for Cranking Mode  
Inactive during Stop /  
Sleep  
Handle IRQ, prepare  
for Cranking Mode  
Inactive during Stop /  
Sleep  
VLVIA  
Cranking Mode Entry  
without MCU  
interaction. MCU will  
stay in STOP mode or  
turned off.  
Inactive for Non  
Cranking Mode Device  
Option  
Inactive for Non  
Cranking Mode Device  
Option  
Under Voltage IRQ  
(UVI) issued.  
VUVCIL  
MCU initiates rapid shutdown  
to Cranking Mode (OPM=11) and  
enters STOP.  
CRANKING MODE  
(MCU = Stop or Off,  
Analog = Cranking Mode  
LPOSC gated => operation stopped)  
MCU in LVR, Analog  
Die remains in Low  
Power Mode  
Inactive during Stop /  
Sleep  
Inactive during Cranking Mode  
Inactive during Cranking Mode  
Inactive during Cranking Mode  
VLVRA  
LOW VOLTAGE RESET at VDDX  
=> Analog Die + MCU in Reset Mode  
VLVRXL  
VLVRHL  
VLVRAL  
System remains in Reset  
Mode  
MCU POR, RAM invalid,  
Analog Die Remains in  
Cranking Mode  
MCU POR, RAM invalid, Both  
Dice Remain in Reset Mode  
VPORA  
Inactive for Cranking Mode  
Device Option  
Analog Die Power On Reset  
VPORL  
Inactive for Non - Cranking  
Mode Device Option  
Analog Die Power On Reset  
VPORCL  
Figure 18. Power down sequence  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
66/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.4  
Wake-up sources  
Several wake-up sources have been implemented in the MM912_637, to exit from Sleep or Stop mode. Figure 19 shows the wake-up  
sources and the corresponding configuration and status bits.  
To indicate the internal wake-up signal, a routing of the internal wake-up signal to the PTBx output (WKUP) is implemented. See  
Section 4.11, “General purpose I/O - GPIO", for additional details on the required configuration.  
GPIO  
WKUP  
TIM4CH  
TCOMP3..0  
PTB0  
I/O  
WUPTB0  
Output Compare CH3  
TCOMP3..0  
Output Compare CH2  
Sytem  
Wake  
Up  
PTB1  
I/O  
Output Compare CH1  
Output Compare CH0  
WUPTB1  
WUPTB2  
TCOMP3..0  
PTB2  
I/O  
=1  
WLPMF  
WUPTB0F  
WUPTB1F  
WUPTB2F  
WUPTB3F  
WULINF  
L0  
PTB3  
I/O  
PTWU  
WUPTB3  
WUAHTHF  
WUCTHF  
WUCALF  
WULTCF  
LIN  
WULIN  
LIN Wake Up detected  
WUAHTH  
WUCTH  
WUCAL  
Current Trigger  
Current Accumulator  
Threshold reached  
Current  
Threshold reached  
Calibration Request  
Life Time Counter  
WULTC  
Life Time Counter  
Overflow  
Figure 19. Wake-up sources  
4.3.4.1  
Wake-up source details  
Cyclic current acquisition/calibration temperature check  
4.3.4.1.1  
A configurable (ACQ_TCMP) independent low power mode counter/trigger, based on the ALFCLK, has been implemented to trigger a  
cyclic current measurement during the low power modes. To validate that the temperature is still within the calibration range, the  
temperature measurement can be enabled during this event as well.  
As a result of the cyclic conversions, three wake-up conditions are implemented.  
Current Threshold Wake-up  
Current Averaging Wake-up  
Calibration Request Wake-up  
The configuration of the counter and the cyclic measurements is part of the acquisition paragraph (see Section 4.8, “Channel acquisition").  
The actual cyclic measurement does not wake-up the microcontroller unless one of the three wake-up conditions become valid.  
4.3.4.1.1.1 Current threshold wake-up  
Every cyclic current measurement result (absolute content of the ADC result I_CURR register) is compared with a programmable  
unsigned current threshold (CTH in the ACQ_CTH register).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
67/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The comparison is done with the CTH content left - shifted by 1, as shown in Table 69.  
Table 69. Current Threshold Comparison  
2
3
2
2
2
1
2
0
1
9
1
8
1
7
1
6
1
5
1
4
1
3
1
2
1
1
1
0
9
8
7
6
5
4
3
2
1
0
CTH[7:0]  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
CTH[7:0]  
0
ABS(CURR[23:0])  
X
ABS(CURR[23:0])  
If the absolute result is greater or equal to the programmed and shifted threshold, a filter counter is incremented (decremented if below).  
If the filter counter (8-Bit) reaches the programmable low power current threshold filtering period (ACQ_THF), a wake-up initiated if the  
Current Threshold Wake-up is enabled (WUCTH). The filter counter is reset every time a low power mode is entered. The implementation  
is shown in Figure 20.  
The wake-up source is flagged with the WUCTHF Bit.  
Figure 20. Current threshold - wake-up counter  
4.3.4.1.1.2 Current ampere hour threshold wake-up  
As shown in Figure 21, every cyclic current measurement (signed content of the ADC result ACQ_CURR register) is added to the 32-Bit  
(signed) current accumulator (ACQ_AHC) (both in two’s complement format). If the absolute accumulator value reaches (|ACQ_AHC|   
ACQ_AHTH), the absolute programmable 31-Bit current threshold (ACQ_AHTH), a wake-up is initiated if the Current AH Threshold  
Wake-up is enabled (WUAHTH). The accumulator could be reset by writing 1 into the AHCR register.  
The Ampere Hour Counter is counting after wake-up. In normal mode, the accumulator register ACQ_AHC can be read out anytime. The  
wake-up source is flagged with the WUAHTHF Bit.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
68/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Ah counter  
Accu  
threshold  
(progr.)  
actual  
measured  
current  
uC  
wake-up  
measurement  
interval  
t
start low-power mode = reset of  
Ah counter  
Figure 21. Ah counter function  
4.3.4.1.1.3 Calibration request wake-up  
Once the temperature measured during the cyclic sense is indicating a potential “out of calibration” situation, a wake-up is issued if the  
Calibration Request Wake-up is enabled (WUCAL). For additional details, refer to Section 4.8.5, “Calibration". The wake-up source is  
flagged with the WUCALF Bit.  
4.3.4.1.2  
Timed wake-up  
To generate a programmable wake-up timer, the integrated 4 Channel Timer Module is supplied, during both low power modes and  
running on the ALFCLK clock. To wake-up from one of the low power modes, the output compare signal (OC) of any of the 4 channels  
can be routed to the PTB[2:0] logic (standard feature also in Normal mode). Enabling the corresponding Wake-up Enable Bit (WUPTBx)  
will generate the wake up, once the timer output compare becomes active.  
NOTE  
Only the internal GPIO logic is active during the low power modes. The Port I/O structures will not be  
active.  
To allow an accurate wake-up configuration during the clock transition, the timer should be configured before entering one of the low power  
modes, without the Timer Enable Bit (TEN) being set. Setting the Timer Wake-up Enable Bit (WUPTB) will enable the TIMER interrupts  
as wake-up sources, and cause the Timer Enable Bit (TEN) to be set, once the timer clock domain was changed to the ALFCLK clock  
supplied by LPOSC.  
During low-power mode, only current and temperature measurements are performed, so only the current measurement channel is active  
with the temperature channel being optional - the voltage measurement channel is inactive. To reduce further the power consumption,  
only triggered current measurements are done. For this purpose, an independent Timer Module is used to periodically start a current  
measurement after a programmable time (ACQ_TCMP).  
4.3.4.1.3  
Wake-up from LIN  
During Low Power mode, operation of the transmitter of the physical layer is disabled. The receiver remain, active and able to detect  
wake-up events on the LIN bus line. For further details, refer to Section 4.12, “LIN". Adominant level longer than t followed by a rising  
WUPF  
edge, will generate a wake-up event if the WULIN is enabled. The wake-up source is flagged with the WULINF Bit.  
NOTE  
If the LIN module is disabled (LIN_CTL:EN=0), no wake-up will be issued after the dominant to  
recessive transition, when the device goes to low power mode, while the LIN bus is in the DOMINANT  
STATE.  
If the LIN module is enabled (LIN_CTL:EN=1), the device will wake-up after the dominant to recessive  
transition, when the device goes to low power mode, while the LIN bus is in the DOMINANT STATE.  
A full dominant -> recessive -> dominant sequence, during low power mode, will wake-up the device  
in both cases.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
69/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.4.1.4  
Wake-up on wake-up pin high level  
Once a Wake-up signal (high level) is detected on the PTB3/L0 input, with the Wake-up Enable Bit (WUPTB3) and the port configuration  
bit (PTWU) set, a wake-up is issued. The wake-up source is flagged with the WUPTB3F Bit.  
4.3.4.1.5  
Wake-up on life time counter overflow  
The life time counter continues to run during low power mode, if configured. Once the counter overflows with the life time counter wake-up  
enabled (WULTC=1), a wake-up is issued. The wake-up source is flagged with the WULTC Bit. Life Time Counter has to be configured in  
Normal mode only.  
4.3.4.1.6  
General wake-up indicator  
To indicate the system has been awakened after power up, the WLPMF flag will be set.  
4.3.5  
Device clock tree  
4.3.5.1  
Clock scheme overview  
There are two system oscillators implemented. The low power oscillator is located on the analog die, and is supplied permanently and has  
a nominal frequency of f (512 kHz), providing a LPCLK clock signal. It is primarily used in low power mode, and as an independent  
OSCL  
clock source for the watchdog during Normal mode.  
The high power oscillator is basically the internal or external microcontroller oscillator (active only during normal mode). The high power  
oscillator is distributed to the analog die via the D2DCLK (via configurable MCU prescalers), and there it’s divided into two clocks  
(D2DSCLK and D2DFCLK), based on the PRESC[15:0] prescaler. For the D2DSCLK, an additional 2 Bit divider PF[1:0] is implemented  
(87). During Normal mode, D2DSCLK is continuously synchronizing the LPCLK, to create the accurate ALFCLK (See Section 4.3.5.2,  
“ALFCLK calibration"), D2DCLK is the clock source of the TIM16B4C (Timer), and S08SCIV4 (SCI) module with a fixed by 4 divider.  
Notes  
87. PF[1:0] is not implemented as a simple divider. To accomplish a D2DSCLK period ranging from 1.0 ms to 8.0 ms, the following scheme is used: 00 -  
1; 01 - 2; 10 - 4; 11 - 8.  
D2DSCLK - D2D Slow Clock (1... 0.125 kHz)  
Eqn. 1  
D2DCLK  
2PF10  PRESC150  
------------------------------------------------------------------------  
D2DSCLK =  
D2DFCLK - D2D Fast Clock (512 kHz)  
Eqn. 2  
D2DCLK  
2  PRESC1510+ PRESC9  
---------------------------------------------------------------------------------------  
D2DFCLK =  
During low power mode, D2DCLK is not available. The low power oscillator is the only system clock. Figure 22 and Figure 23 show the  
different clock sources for normal and low power mode.  
NOTE  
D2DFCLK has to be set to match 512 kHz, resulting in D2DSCLK being 1.0, 2.0, 4.0, or 8.0 kHz,  
based on PF[1:0]  
The minimum value for PRESC[15:0] has to be 0x0400. Any value lower than 0x0400 will result in  
faulty behavior and is not recommended. Values of 0x0003 or less are not stored by the internal logic.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
70/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
WDTO[2:0]=100  
tIWDTO  
tWDTO  
Window  
Watchdog  
LPOSC  
(fOSCL)  
WDTO[2:0]  
LP CLK Synch  
LPCLK  
Life Time Counter  
ALFCLK  
D2DSCLK  
PF[1:0]  
trim_lposc  
Channel  
D2DFCLK  
Acquisition  
PRESC[15:0]  
D2D Interface  
TIM16B4C  
(Timer)  
D2DCLK  
[15:10]  
[9:0]  
S08SCIV4  
(SCI)  
DIV4  
Figure 22. Clock tree overview - normal mode  
Life Time Counter  
LPOSC  
LP CLK Synch  
LPCLK  
ALFCLK  
TIM16B4C  
(Timer)  
trim_lposc  
Current Trigger  
Channel  
Acquisition  
Figure 23. Clock tree overview - low power modes  
4.3.5.2  
ALFCLK calibration  
To increase the accuracy of the 1.0 kHz (or 2.0, 4.0, 8.0 kHz based on PF[1:0]) system clock (ALFCLK), the low power oscillator (LPCLK)  
is synchronized to the more precise D2DCLK, via the D2DSCLK signal. The “Calibrated Low Power Clock” (ALFCLK) could be trimmed  
to the D2DCLK accuracy plus a maximum error adder of 1 LPCLK period, by internally counting the number of periods of the LPCLK  
(512 kHz) during a D2DSCLK period. The APRESC[12:0] register will represent the calculated internal prescaler. The PRDF bit (Prescaler  
Ready flag) will indicate the synchronization complete after a power up or prescaler (PRESC/PF) change.  
The adjustment is continuously performed during Normal mode. During low power mode (STOP or SLEEP), the last adjustment factor  
would be used.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
71/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
D2DCLK  
PRESC[15:0]+PF[1:0] Counter based ms clock (D2DSCLK) period  
LPCLK  
1
2
3
4
5
6
7
8
9
APRESC[12:0]  
PRDF  
0x0200 (512d) default  
0
0x0009 (9d)  
1
Synch  
Start  
Synch  
Finished  
Figure 24. ALF clock calibration procedure during normal mode  
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
1
2
3
4
5
LPCLK  
PRDF  
0
?
1
APRESC[12:0]  
0x0009 (9d)  
ALFCLK  
Figure 25. ALFCLK after calibration  
4.3.5.3  
Recommended clock settings  
Considering the system is running on the internal oscillator, Table 70 shows the recommended clock settings to achieve the optimal  
512 kHz D2DFCLK. For details on the MCU divider settings, including POSTDIV and SYNDIV, see Section 4.23, “S12 clock, reset, and  
power management unit (9S12I128PIMV1)". The D2D initiator module includes D2DCLKDIV see Section 4.26, “MCU - die-to-die initiator  
(9S12I128PIMV1)".  
Table 70. Recommended clock settings  
fD2D / MHz  
POSTDIV for (SYNDIV=fVCO in MHz)  
32.768  
31.744  
30.720  
29.696  
28.672  
27.648  
26.624  
16.384  
8.192  
7.168  
0
64  
62  
60  
58  
56  
54  
52  
63;64  
61;62  
59;60  
57;58  
55;56  
53;54  
51;52  
0
15.360 10.240  
0
0
14.336  
9.216  
0
0
13.312  
0
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
72/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 70. Recommended clock settings (continued)  
fD2D / MHz  
POSTDIV for (SYNDIV=fVCO in MHz)  
25.600  
0
50  
48  
46  
44  
42  
40  
48  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
49;50  
47;48  
45;46  
43;44  
41;42  
39;40  
47;48  
35;36  
33;34  
31;32  
29;30  
27;28  
25;26  
23;24  
21;22  
19;20  
17;18  
15;16  
13;14  
11;12  
9;10  
24.576  
23.552  
22.528  
21.504  
20.480  
19.456  
18.432  
17.408  
16.384  
15.360  
14.336  
13.312  
12.288  
11.264  
10.240  
9.216  
12.288  
11.264  
10.240  
9.216  
8.192  
7.168  
6.144  
5.120  
4.096  
3.072  
2.048  
8.192  
7.168  
6.144  
5.120  
4.096  
3.072  
2.048  
6.144  
5.120  
4.096  
3.072  
2.048  
0
0
0
0
0
0
0
0
1
0
1
1
1
1
1
2
1
2
1
2
8.192  
3
2
3
1
7.168  
3
2
6
6.144  
4
5
5.120  
4
3
4
4.096  
7
6
5
7
3
7
7;8  
3.072  
9
8
5
8
6
5;6  
2.048  
15  
14  
13  
12  
11  
10  
9
4
4
Notes  
88. For D2DCLKDIV=1  
4.3.6  
System resets  
To guarantee safe operation, several RESET sources have been implemented in the MM912_637 device. Both the MCU and the analog  
die are designed to initiate reset events on internal sources and the MCU is capable of being reset by external events including the analog  
die reset output. The analog die can be reset through RESETA in stop and cranking mode only. In normal mode, the MCU can reset the  
analog die only by writing 1 into HWR bit (remind the mask bit HWRM).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
73/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.6.1  
Device reset overview  
The MM912_637 reset concept includes two external reset signals, RESET (MCU) and RESET_A (analog Die). Figure 26 illustrates the  
general configuration.  
Power-On Reset  
Hardware Reset  
(POR)  
Low Voltage  
Reset (LVR)  
Watchdog Reset  
External pin  
RESET  
Low Voltage  
Reset  
Illegal Address  
Reset  
Thermal  
Shutdown Reset  
Clock monitor  
reset  
COP watchdog  
reset  
MCU  
Analog Die  
Figure 26. Device reset overview  
Both RESET and RESET_A signals are low active I/Os, based on the 5.0 V supply (VDDRX for RESET and VDDX for RESET_A).  
4.3.6.2  
Analog die reset implementation  
There are 7 internal reset sources implemented in the analog die of the MM912_637 that causing the internal analog die status to be reset  
to default (Internal analog RST), and to trigger an external reset, activating the RESET_A pin. In addition, during stop and cranking mode,  
an external reset at the RESET_A pin will also reset the analog die.  
VDDLR  
RESET_A  
1
VDDHR  
0
0
1
WDR  
Cranking  
Mode  
tRSTRT  
LPM  
HWR  
TSDR  
VDDXR  
1
VDDAR  
0
Measure  
LPM = Low Power Mode  
during LPM  
Figure 27. Analog die reset implementation  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
74/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The WDR and HWR will issue a reset on the RESET_A pin during t  
(see Table 30). The other reset VDDLR, VDDHR, VDDXR,  
RSTRT  
VDDAR, and TSDR will drive the RESET_A pin as long as the condition is present. During cranking mode (89), only the VDDLR is active.  
During Low Power modes, only VDDXR and VDDAR are active reset sources. VDDAR is only active during active measurement in LPM.  
VDDXR and VDDAR are not active in Normal mode.  
Notes  
89. Not available on all device derivatives  
4.3.6.3  
Reset source summary  
HWR - Hardware Reset  
Forced internal reset caused by writing the HWR bit in the PCR_CTL register. The source will be indicated by the HWRF bit.  
WDR - Watchdog Reset  
Window watchdog failure. The source will be indicated by the WDRF bit.  
LVR - Low Voltage Reset  
The Voltage at the VDDL, VDDH, VDDX, or VDDA has dropped below its reset threshold level. The source will be indicated  
for the VDDL by the LVRF + HVRF, for the VDDA by the AVRF, and for the VDDH by the HVRF bit. VDDX resets are not  
indicated via individual reset flags. See Figure 27 for dependencies.  
TSDR - Temperature Shutdown Reset  
The critical shutdown temperature threshold has been reached. VDDA, VDDX, and VDDH will be disabled as long as the  
overtemperature condition is pending(90) and the reset source is indicated by the HTF bit.  
External Reset  
During stop and cranking(90) mode, a low signal at the RESET_A pin will reset the analog die. Since this condition can only  
be initiated by the microcontroller, no specific indicator flag is implemented.  
Notes  
90. Resulting in a VDDH Low Voltage Reset taking over the reset after the 2 LPCLK reset pulse  
TSDR  
WDR  
HTF  
WDRF  
HWRF  
HVRF  
LVRF  
AVRF  
HWR  
VDDHR  
VDDLR  
VDDAR  
VDDXR  
No Flag Indicator  
Figure 28. Reset status information  
4.3.7  
PCR - memory map and registers  
4.3.7.1  
Overview  
This section provides a detailed description of the memory map and registers.  
4.3.7.2  
Module memory map  
The memory map for the Analog Die - Power, Clock and Resets - PCR module is given in Table 63  
Table 71. Module Memory Map  
Offset  
Name  
7
6
5
4
3
2
1
0
(91),(92)  
R
W
R
0
0
0
HWRM  
0
0
0
0
0
0
0
0
0
HTIEM  
UVIEM  
PFM[1:0]  
PF[1:0]  
OPMM[1:0]  
OPM[1:0]  
PCR_CTL  
PCR Control Register  
0x00  
HTIE  
UVIE  
W
HWR  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
75/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 71. Module Memory Map  
Offset  
Name  
7
6
5
4
3
2
1
0
(91),(92)  
PCR_SR (hi)  
0x02  
R
W
R
HTF  
UVF  
HWRF  
WDRF  
HVRF  
LVRF  
WULTCF  
WLPMF  
PCR Status Register  
Write 1 will clear the flags  
WULINF WUPTB3F WUPTB2F WUPTB1F WUPTB0F  
PCR_SR (lo)  
0x03  
WUAHTHF WUCTHF  
WUCALF  
PCR Status Register  
W
R
Write 1 will clear the flags  
W
R
PCR_PRESC  
0x04  
PRESC[15:0]  
PCR 1.0 ms prescaler  
W
R
PCR_WUE (hi)  
0x06  
WUAHTH  
WULTC  
WUCTH  
0
WUCAL  
0
WULIN  
0
WUPTB3  
0
WUPTB2  
0
WUPTB1  
0
WUPTB0  
0
Wake-up Enable Register  
W
R
PCR_WUE (lo)  
0x07  
Wake-up Enable Register  
W
TRIM_ALF (hi)  
0x0E  
R
W
R
PRDF  
0
0
APRESC[12:8]  
Trim for accurate 1.0 ms low freq clock  
TRIM_ALF (lo)  
0x0F  
APRESC[7:0]  
Trim for accurate 1.0 ms low freq clock  
W
Notes  
91. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
92. Register Offset with the “lo” address value not shown have to be accessed in 16-Bit mode. 8-Bit access will not function.  
4.3.7.3  
Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.3.7.3.1  
PCR control register (PCR_CTL)  
Table 72. PCR control register (PCR_CTL)  
Offset  
,
0x00  
Access: User read/write  
(93) (94)  
15  
14  
13  
12  
0
11  
0
10  
0
9
8
0
R
W
0
0
0
0
HTIEM  
UVIEM  
HWRM  
0
PFM[1:0]  
PF[1:0]  
OPMM[1:0]  
Reset  
0
7
0
6
0
0
0
3
0
2
0
1
0
0
5
0
4
R
W
0
HTIE  
0
UVIE  
0
OPM[1:0]  
0
HWR  
0
0
Reset  
0
0
0
0
Notes  
93. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
94. Register Offset with the “lo” address value not shown have to be accessed in 16-Bit mode. 8-Bit access will not function.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
76/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 73. PCR control register (PCR_CTL) - register field descriptions  
Field  
Description  
High temperature interrupt enable mask  
0 - writing the HTIE bit will have no effect  
1 - writing the HTIE bit will be effective  
15  
HTIEM  
Supply undervoltage interrupt enable mask  
0 - writing the UVIE bit will have no effect  
1 - writing the UVIE bit will be effective  
14  
UVIEM  
Hardware reset mask  
0 - writing the HWR bit will have no effect  
1 - writing the HWR bit will be effective  
13  
HWRM  
12  
Reserved  
Reserved. Must remain “0”  
Prescaler factor mask  
00,01,10 - writing the PF bits will have no effect  
1 - writing the PF bits will be effective  
11-10  
PFM[1:0]  
Operation mode mask  
00,01,10 - writing the OPM bits will have no effect  
11 - writing the OPM bits will be effective  
9-8  
OPMM[1:0]  
High Temperature Interrupt enable. Writing only effective with corresponding mask bit HTIEM set.  
0 - High temperature interrupt (HTI) enabled  
1 - High temperature interrupt (HTI) disabled  
7
HTIE  
Low supply voltage interrupt enable. Writing only effective with corresponding mask bit UVIEM set.  
0 - Low supply voltage interrupt (UVI) enabled  
1 - Low supply voltage interrupt (UVI) disabled  
6
UVIE  
Hardware Reset. Writing only effective with corresponding mask bit HWRM set. Write only.  
0 - No effect  
1 - All analog die digital logic is reset and external reset (RESET_A) is set to reset the MCU.  
5
HWR  
4
Reserved. Must remain “0”  
Reserved  
1.0 ms Prescaler. Writing only effective with corresponding mask bits PFM set to 11.  
00 - 1  
01 - 2  
10 - 4  
11 - 8  
3-2  
PF[1:0]  
Operation mode select. Writing only effective with “11” mask bits OPMM set to 11.  
00 - Normal mode  
1-0  
01 - Stop mode  
OPM[1:0]  
10 - Sleep mode  
11 with Cranking feature disabled - same effect as 01 (STOP mode)  
11 with Cranking feature enabled - Cranking mode  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
77/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.7.3.2  
PCR status register (PCR_SR (hi))  
Table 74. PCR status register (PCR_SR (hi))  
Offset(95)  
Access: User read/write  
0x02  
7
6
5
4
3
2
1
0
R
W
HTF  
UVF  
HWRF  
WDRF  
HVRF  
LVRF  
WULTCF  
WLPMF  
Write 1 will clear the flags(96)  
0/1 0/1  
Reset  
0
0
0/1  
0/1  
0
0
Notes  
95. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
96. HTF and UVF represent the current status and cannot be cleared. Writing 1 to HTF / UVF will clear the Interrupt flag in the Interrupt Source Register  
and Interrupt Vector Register instead.  
Table 75. PCR status register (PCR_SR (hi)) - register field descriptions  
Field  
Description  
High Temperature Condition Flag. This bit is set once a temperature warning is detected, or the last reset being caused by a temperature  
shutdown event (TSDR). Writing HTF=1 will clear the flag and the interrupt flag in the Interrupt Source Register and Interrupt Vector  
Register, if the condition is gone.  
7
HTF  
0 - No High Temperature condition detected.  
1 - High Temperature condition detected or last reset = TSDR.  
Supply Undervoltage Condition Flag. This bit is set once a undervoltage warning is detected. Writing UVF=1 will clear the flag and the  
Interrupt flag in the Interrupt Source Register and Interrupt Vector Register, if the condition is gone (UVF=0).  
6
0 - No undervoltage condition detected.  
1 - Undervoltage condition detected.  
UVF  
Hardware Reset Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Last reset was caused by a HWR command.  
5
HWRF  
Watchdog Reset Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Last reset was caused by the analog die window watchdog.  
4
WDRF  
VDDH Low Voltage Reset Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
3
HVRF  
1 - Last reset was caused by a low voltage condition at the VDDH regulator. (LVRF = 0)  
1 - Last reset was caused by a low voltage condition at the VDDL regulator. (LVRF = 1)  
VDDL Low Voltage (POR) Reset Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Last reset was caused by a low voltage condition at the VDDL regulator. (Power on Reset - POR)  
2
LVRF  
Life Time Counter Wake-up Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Last Wake-up was caused by a life time counter overflow  
1
WULTCF  
Wake-up after Low Power Mode Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after Low Power mode.  
0
WLPMF  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
78/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.7.3.3  
PCR status register (PCR_SR (lo))  
Table 76. PCR status register (PCR_SR (lo))  
Offset(97)  
Access: User read/write  
0x03  
7
6
5
4
3
2
1
0
R
W
WUAHTHF  
WUCTHF  
WUCALF  
WULINF  
WUPTB3F  
WUPTB2F  
WUPTB1F  
WUPTB0F  
Write 1 will clear the flags  
Reset  
0
0
0
0
0
0
0
0
Notes  
97. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 77. PCR status register (PCR_SR (lo)) - register field descriptions  
Field  
Description  
Wake-up on Ah counter threshold Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after Ah counter threshold reached.  
7
WUAHTHF  
Wake-up on current threshold Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after current threshold reached.  
6
WUCTHF  
Wake-up on calibration request flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after calibration request.  
5
WUCALF  
Wake-up on LIN flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after LIN wake-up detected  
4
WULINF  
Wake-up on GPIO 3 event (L0 external wake-up) flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after GPIO 3 event  
3
WUPTB3F  
Wake-up on GPIO 2 event (TIMER output compare) flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after GPIO 2 event  
2
WUPTB2F  
Wake-up on GPIO 1 event (TIMER output compare) flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after GPIO 1 event  
1
WUPTB1F  
Wake-up on GPIO 0 event (TIMER output compare) flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Indicates wake-up after GPIO 0 event  
0
WUPTB0F  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
79/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.3.7.3.4  
PCR 1.0 ms prescaler (PCR_PRESC)  
Table 78. PCR 1.0 ms Prescaler (PCR_PRESC)  
Offset (98),(99)  
Access: User read/write  
0x04  
15  
14  
13  
12  
11  
10  
9
8
R
W
PRESC[15:8]  
PRESC[7:0]  
Reset  
0
7
1
6
1
5
1
4
1
3
1
2
0
1
1
0
R
W
Reset  
0
0
0
0
0
0
0
0
Notes  
98. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
99. This Register is 16 Bit access only.  
Table 79. PCR 1.0 ms prescaler (PCR_PRESC) - register field descriptions  
Field  
Description  
15-0  
PRESC[15:0]  
1.0 ms Prescaler, used to derive D2DSCLK and D2DFCLK from the D2DCLK signal. See 4.3.5, “Device clock tree" for details.  
4.3.7.3.5  
Wake-up enable register (PCR_WUE (hi))  
Table 80. Wake-up enable register (PCR_WUE (hi))  
Offset(100)  
Access: User read/write  
1 0  
0x06  
7
WUAHTH  
0
6
WUCTH  
0
5
WUCAL  
0
4
WULIN  
0
3
WUPTB3  
0
2
WUPTB2  
0
R
W
WUPTB1  
0
WUPTB0  
0
Reset  
Notes  
100. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 81. Wake-up enable register (PCR_WUE (hi)) - register field descriptions  
Field  
Description  
7
0 - Wake-up on Ah counter disabled  
1 - Wake-up on Ah counter enabled  
WUAHTH  
6
0 - Wake-up on current threshold disabled  
1 - Wake-up on current threshold enabled  
WUCTH  
5
0 - Wake-up on calibration request disabled  
1 - Wake-up on calibration request enabled  
WUCAL  
4
0 - Wake-up on LIN disabled  
1 - Wake-up on LIN enabled  
WULIN  
3
0 - Wake-up on GPIO 3 event disabled  
1 - Wake-up on GPIO 3 event enabled  
WUPTB3  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
80/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 81. Wake-up enable register (PCR_WUE (hi)) - register field descriptions (continued)  
Field  
Description  
2
0 - Wake-up on GPIO 2 event disabled  
1 - Wake-up on GPIO 2 event enabled  
WUPTB2  
1
0 - Wake-up on GPIO 1 event disabled  
1 - Wake-up on GPIO 1 event enabled  
WUPTB1  
0
0 - Wake-up on GPIO 0 event disabled  
1 - Wake-up on GPIO 0 event enabled  
WUPTB0  
4.3.7.3.6  
Wake-up enable register (PCR_WUE (lo))  
Table 82. Wake-up enable register (PCR_WUE (lo))  
Offset(101)  
Access: User read/write  
0x07  
7
WULTC  
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
Notes  
101. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 83. Wake-up enable register (PCR_WUE (lo)) - register field descriptions  
Field  
Description  
7
0 - Wake-up on Life Timer Counter Overflow disabled  
1 - Wake-up on Life Timer Counter Overflow enabled  
WULTC  
4.3.7.3.7  
Trim for accurate 1.0 ms low freq clock (TRIM_ALF (hi))  
Table 84. Trim for accurate 1.0 ms low freq clock (TRIM_ALF (hi))  
Offset(102)  
Access: User read  
8
0x0E  
15  
14  
0
13  
0
12  
11  
10  
9
R
PRDF  
APRESC[12:8]  
W
Notes  
102. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.3.7.3.8  
Trim for accurate 1.0 ms low freq clock (TRIM_ALF (lo))  
Table 85. Trim for accurate 1.0 ms low freq clock (TRIM_ALF (lo))  
Offset(103)  
Access: User read  
0
0x0F  
7
6
5
4
3
2
1
R
APRESC[7:0]  
W
Notes  
103. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
81/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 86. Trim for accurate 1.0 ms low freq clock (TRIM_ALF (lo)) - register field descriptions  
Field  
Description  
ALFCLK Prescaler ready Flag  
0 - The ALFCLK synchronization after power up or PRESC[15:0] / PF[1:0] change is not completed.  
1 - The ALFCLK synchronization is complete. The ALFCLK signal is synchronized to the D2DCLK.  
15  
PRDF  
ALFCLK Prescaler  
This read only value represents the current ALFCLK prescaler value. With the synchronization complete (PRDF=1), the prescaler is  
used to create the calibrated clock for the Life Time Counter (Normal mode and Low Power mode), and Timer and Current trigger (Low  
Power Mode only), based on the low power oscillator.  
12-0  
APRESC[12:0]  
After Power Up, the APRESC register is reset to 0x0200 (512dec) until the first synchronization is complete. This will initialize the  
ALFCLK to 1.0 kHz.  
4.4  
Interrupt module - IRQ  
Introduction  
4.4.1  
Several interrupt sources are implemented on the analog die to indicate important system conditions. Those Interrupt events are  
signalized via the D2DINT signal to the microcontroller. See Section 4.18, “MCU - interrupt module (S12S9S12I128PIMV1V1)".  
4.4.2  
Interrupt source identification  
Once an Interrupt is signalized, there are two options to identify the corresponding source(s).  
NOTE  
The following Interrupt source registers (Interrupt Source Mirror and Interrupt Vector Emulation by  
Priority) are indicators only. After identifying the interrupt source, the acknowledgement of the  
interrupt has to be performed in the corresponding block.  
4.4.2.1  
Interrupt source mirror  
All Interrupt sources in the MM912_637 analog die are mirrored to a special Interrupt Source Register (INT_SRC). This register is read  
only and will indicate all currently pending Interrupts. Reading this register will not acknowledge any interrupt. An additional D2D access  
is necessary to serve the specific module.  
4.4.2.2  
Interrupt vector emulation by priority  
To allow a vector based interrupt handling by the MCU, the number of the highest prioritized interrupt pending is returned in the Interrupt  
Vector Register (INT_VECT). Reading this register will not acknowledge an interrupt. An additional D2D access is necessary to serve the  
specific module.  
4.4.3  
Interrupt global mask  
The Global Interrupt mask registers INT_MSK (hi) and INT_MSK (lo) are implemented to allow a global enable / disable of all analog die  
Interrupt sources. The individual blocks mask registers should be used to control the individual sources.  
4.4.4  
Interrupt sources  
The following Interrupt sources are implemented on the analog die.  
Table 87. Interrupt sources  
IRQ  
Description  
UVI  
HTI  
Undervoltage Interrupt (or wake-up from Cranking mode)  
High Temperature Interrupt  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
82/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 87. Interrupt sources  
IRQ  
Description  
LTI  
CH0  
CH1  
CH2  
CH3  
TOV  
ERR  
TX  
LIN Driver Overtemperature Interrupt  
TIM Channel 0 Interrupt  
TIM Channel 1 Interrupt  
TIM Channel 2 Interrupt  
TIM Channel 3 Interrupt  
TIM Timer Overflow Interrupt  
SCI Error Interrupt  
SCI Transmit Interrupt  
RX  
SCI Receive Interrupt  
CVMI  
LTC  
CAL  
Current / Voltage Measurement Interrupt  
Lifetime Counter Interrupt  
Calibration Request Interrupt  
4.4.4.1  
Undervoltage interrupt (UVI)  
This maskable interrupt signalizes a undervoltage condition on the VSUP supply input. Acknowledge the interrupt by writing a 1 into the  
UVF Bit in the PCR Status Register (PCR_SR (hi)). The flag cannot be cleared as long as the condition is present. To issue a new interrupt,  
the condition has to vanish and occur again. The UVF Bit represents the current condition, and might not be set after an interrupt was  
signalized by the interrupt source registers. See Section 4.3, “Analog die - power, clock and resets - PCR" for details on the PCR Status  
Register (PCR_SR (hi)), including masking information.  
NOTE  
The undervoltage interrupt is not active in devices with the Cranking mode enabled. For those  
devices, the undervoltage threshold is used to enable the high precision low voltage threshold during  
Stop/Sleep mode. Once the device wakes up from cranking mode, the UVI flag is indicating the  
wake-up source.  
4.4.4.2  
High temperature interrupt (HTI)  
This maskable interrupt signalizes a high temperature condition on the analog die. The sensing element is located close to the major  
thermal contributors, the system voltage regulators.  
Acknowledge the interrupt by writing a 1 into the HTF Bit in the PCR Status Register (PCR_SR (hi)). The flag cannot be cleared as long  
as the condition is present. To issue a new interrupt, the condition has to vanish and occur again. The HTF Bit represents the current  
condition and might not be set after an interrupt was signalized by the interrupt source registers. See Section 4.3, “Analog die - power,  
clock and resets - PCR" for details on the PCR Status Register (PCR_SR (hi)), including masking information.  
4.4.4.3  
LIN driver overtemperature interrupt (LTI)  
Acknowledge the interrupt by reading the LIN Register - LINR. The flag cannot be cleared as long as the condition is present. To issue a  
new interrupt, the condition has to vanish and occur again. See Section 4.12, “LIN" for details on the LIN Register, including masking  
information.  
4.4.4.4  
TIM channel 0 interrupt (CH0)  
See Section 4.10, “Basic timer module - TIM (TIM16B4C)".  
4.4.4.5  
TIM channel 1 interrupt (CH1)  
See Section 4.10, “Basic timer module - TIM (TIM16B4C)".  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
83/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.4.4.6  
TIM channel 2 interrupt (CH2)  
See Section 4.10, “Basic timer module - TIM (TIM16B4C)".  
4.4.4.7  
TIM channel 3 interrupt (CH3)  
See Section 4.10, “Basic timer module - TIM (TIM16B4C)".  
4.4.4.8  
TIM timer overflow interrupt (TOV)  
See Section 4.10, “Basic timer module - TIM (TIM16B4C)".  
4.4.4.9  
SCI error interrupt (ERR)  
See Section 4.13, “Serial communication interface (S08SCIV4)".  
4.4.4.10 SCI transmit interrupt (TX)  
See Section 4.13, “Serial communication interface (S08SCIV4)".  
4.4.4.11 SCI receive interrupt (RX)  
See Section 4.13, “Serial communication interface (S08SCIV4)".  
4.4.4.12 Current/voltage measurement interrupt (CVMI)  
Indicates the current or voltage measurement finished (VM or CM bit set). See Section 4.8, “Channel acquisition".  
4.4.4.13 Life time counter interrupt (LTC)  
In case a Life Time Counter overflow occurs with the corresponding interrupt enabled, the LTC interrupt is issued. See Section 4.14, “Life  
time counter (LTC)".  
4.4.4.14 Calibration request interrupt (CAL)  
Once a request for re-calibration is present (Temperature out of pre-set range), the Calibration Interrupt is issued. After a calibration  
wake-up, the reading of ACQ_ITEMP must be done after waiting for the latency of the temperature acquisition chain. Then ACQ_ITEMP  
is valid to adjust the compensation over temperature. See full documentation on the interrupt source inSection 4.8, “Channel acquisition".  
4.4.5  
IRQ - memory map and registers  
Overview  
4.4.5.1  
This section provides a detailed description of the memory map and registers.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
84/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.4.5.2  
Module memory map  
The memory map for the IRQ module is given in Table 63  
Table 88. Module memory map  
Offset(104)  
0x08  
Name  
7
6
5
4
3
2
1
0
INT_SRC (hi)  
R
W
R
TOV  
CH3  
CH2  
CAL  
0
CH1  
LTC  
0
CH0  
LTI  
RX  
HTI  
TX  
UVI  
Interrupt source register  
INT_SRC (lo)  
0
0
0
0
0
0
CVMI  
ERR  
0x09  
0x0A  
0x0B  
0x0C  
Interrupt source register  
INT_VECT  
W
R
IRQ[3:0]  
Interrupt vector register  
W
R
0
0
0
0
0
0
Reserved  
W
R
INT_MSK (hi)  
Interrupt mask register  
INT_MSK (lo)  
TOVM  
0
CH3M  
0
CH2M  
CALM  
CH1M  
LTCM  
CH0M  
CVMM  
LTIM  
RXM  
HTIM  
TXM  
UVIM  
W
R
0x0D  
ERRM  
Interrupt mask register  
W
Notes  
104. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.4.5.3  
Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.4.5.3.1  
Interrupt source register (INT_SRC (hi))  
Table 89. Interrupt source register (INT_SRC (hi))  
Offset(105)  
Access: User read  
0x08  
7
6
5
4
3
2
1
0
R
TOV  
CH3  
CH2  
CH1  
CH0  
LTI  
HTI  
UVI  
W
Notes  
105. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 90. Interrupt Source Register (INT_SRC (hi)) - register field descriptions  
Field  
Description  
TIM16B4C - Timer overflow interrupt status  
0 - No timer overflow interrupt pending  
1 - Timer overflow interrupt pending  
7
TOV  
TIM16B4C - TIM channel 3 interrupt status  
0 - No channel 3 interrupt pending  
1 - Channel 3 interrupt pending  
6
CH3  
TIM16B4C - TIM channel 2 interrupt status  
0 - No channel 2 interrupt pending  
1 - Channel 2 interrupt pending  
5
CH2  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
85/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 90. Interrupt Source Register (INT_SRC (hi)) - register field descriptions (continued)  
Field  
Description  
TIM16B4C - TIM channel 1 interrupt status  
0 - No channel 1 interrupt pending  
1 - Channel 1 interrupt pending  
4
CH1  
TIM16B4C - TIM channel 0 interrupt status  
0 - No channel 0 interrupt pending  
1 - Channel 0 interrupt pending  
3
CH0  
LIN Driver overtemperature interrupt status  
0 - No LIN driver overtemperature interrupt  
1 - LIN driver overtemperature interrupt  
2
LTI  
High temperature interrupt status  
0 - No high temperature interrupt pending  
1 - High temperature interrupt pending  
1
HTI  
Undervoltage interrupt pending or wake-up from Cranking mode status  
0 - No undervoltage Interrupt pending or wake-up from Cranking mode  
1 - Undervoltage interrupt pending or wake-up from Cranking mode  
0
UVI  
4.4.5.3.2  
Interrupt source register (INT_SRC (lo))  
Table 91. Interrupt source register (INT_SRC (lo))  
Offset(106)  
Access: User read  
0x09  
7
0
6
0
5
4
3
2
1
0
R
CAL  
LTC  
CVMI  
RX  
TX  
ERR  
W
Notes  
106. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 92. Interrupt source register (INT_SRC (lo)) - register field descriptions  
Field  
Description  
Calibration request interrupt status  
0 - No calibration request interrupt pending  
1 - Calibration request interrupt pending  
5
CAL  
Life time counter interrupt status  
0 - No life time counter interrupt pending  
1 - Life time counter interrupt pending  
4
LTC  
Current / Voltage measurement interrupt status  
0 - No Current / Voltage measurement interrupt pending  
1 - Current / Voltage measurement interrupt pending  
3
CVMI  
SCI receive interrupt status  
0 - No SCI receive interrupt pending  
1 - SCI receive interrupt pending  
2
RX  
SCI transmit interrupt status  
0 - No SCI transmit interrupt pending  
1 - SCI transmit interrupt pending  
1
TX  
SCI error interrupt status  
0 - No SCI transmit interrupt pending  
1 - SCI transmit interrupt pending  
0
ERR  
4.4.5.3.3  
Interrupt vector register (INT_VECT)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
86/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 93. Interrupt vector register (INT_VECT)  
Offset(107)  
Access: User read  
0x0A  
7
0
6
0
5
0
4
0
3
2
1
0
R
IRQ  
W
Notes  
107. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 94. Interrupt vector register (INT_VECT) - register field descriptions  
Field  
Description  
4-0  
IRQ  
Represents the highest prioritized interrupt pending. See Table 95. If no interrupt is pending, the result will be 0.  
Table 95. Interrupt vector/priority  
IRQ  
Description  
IRQ  
0x00  
0x01  
0x02  
0x03  
0x04  
0x05  
0x06  
0x07  
0x08  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E  
Priority  
-
No interrupt pending or wake-up from Stop mode  
Undervoltage interrupt or wake-up from Cranking mode  
High temperature interrupt  
LIN driver overtemperature interrupt  
TIM channel 0 interrupt  
-
UVI  
HTI  
1 (highest)  
2
LTI  
3
CH0  
CH1  
CH2  
CH3  
TOV  
ERR  
TX  
4
TIM channel 1 interrupt  
5
TIM channel 2 interrupt  
6
TIM channel 3 interrupt  
7
TIM timer overflow interrupt  
SCI error interrupt  
8
9
SCI transmit interrupt  
10  
RX  
SCI receive interrupt  
11  
12  
CVMI  
LTC  
CAL  
Acquisition interrupt  
Life time counter interrupt  
Calibration request interrupt  
13  
14 (lowest)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
87/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.4.5.3.4  
Interrupt mask register (INT_MSK (hi))  
Table 96. Interrupt mask register (INT_MSK (hi))  
Offset(108)  
Access: User read/write  
0x0C  
7
TOVM  
0
6
CH3M  
0
5
CH2M  
0
4
CH1M  
0
3
CH0M  
0
2
LTIM  
0
1
HTIM  
0
0
UVIM  
0
R
W
Reset  
Notes  
108. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 97. Interrupt mask register (INT_MSK (hi)) - register field descriptions  
Field  
Description  
Timer overflow interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
7
TOVM  
Timer channel 3 interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
6
CH3M  
Timer channel 2 interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
5
CH2M  
Timer channel 1 interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
4
CH1M  
Timer channel 1 interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
3
CH0M  
LIN driver overtemperature interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
2
LTIM  
High temperature interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
1
HTIM  
Undervoltage interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
0
UVIM  
4.4.5.3.5  
Interrupt mask register (INT_MSK (lo))  
Table 98. Interrupt mask register (INT_MSK (lo))  
Offset(109)  
Access: User read/write  
1 0  
0x0D  
7
0
6
0
5
CALM  
0
4
LTCM  
0
3
CVMM  
0
2
RXM  
0
R
W
TXM  
0
ERRM  
0
Reset  
0
0
Notes  
109. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
88/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 99. Interrupt mask register (INT_MSK (lo)) - register field descriptions  
Field  
Description  
Calibration request interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
5
CALM  
Life time counter interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
4
LTCM  
Current / Voltage measurement interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
3
CVMM  
SCI receive interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
2
RXM  
SCI transmit interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
1
TXM  
SCI error interrupt mask  
0 - Interrupt enabled  
1 - Interrupt disabled  
0
ERRM  
4.5  
Current measurement - ISENSE  
Introduction  
4.5.1  
This chapter only gives a summary of the current sense module. Refer to Section 4.8, “Channel acquisition" for the complete description  
of all acquisition channels, including the current measurement channel.  
4.5.1.1  
Features  
Dedicated 16 Bit Sigma Delta () ADC  
Programmable Gain Amplifier (PGA) with 8 programmable gain factors  
Gain Control Block (GCB) for automatic gain adjustment  
Simultaneous Sampling with Voltage Channel  
Programmable Gain and Offset Compensation  
Optional Chopper Mode with moving average  
SINC3 + IIR Stage  
Calibration mode to compute compensation buffers  
Programmable Low Pass Filter (LPF), configuration shared with the Voltage Measurement Channel  
Optional Shunt resistor sensing feature  
Triggered Sampling during Low Power Mode with programmable wake-up conditions  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
89/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.5.1.2  
Block diagram  
PGA  
Auto  
Zero  
Battery  
Minus  
Pole  
Input  
Swap  
ESD  
ESD  
ISENSEL  
ISENSEH  
Decimation  
with IIR  
PGA  
GCB  
Compensation  
LPF  
24Bit  
RSHUNT  
Chassis  
Ground  
Vref  
Digital Chopper  
Figure 29. Current measurement channel  
The battery current is measured by measuring the voltage drop V over an external shunt resistor, connected to ISENSEH and  
DROP  
ISENSEL. V  
, and is defined as the differential voltage between the ISENSEL and ISENSEH inputs (V  
=ISENSEL-ISENSEH). A  
DROP  
DROP  
positive voltage drop means a positive current is flowing, and vice versa.  
If the GND pin of the module is connected to ISENSEH, the measured current includes the supply current of the MM912_637 (current  
flows back to negative battery pole). If the GND pin is connected to the ISENSEL input, the supply current of the MM912_637 is not  
measured. However, the voltage at the ISENSEH input could go below GND (see max ratings). In this case, the current measurement still  
functions as specified.  
4.6  
Voltage measurement - VSENSE  
Introduction  
4.6.1  
This chapter only gives a summary of the voltage sense module. Refer to Section 4.8, “Channel acquisition" for the complete description  
of all acquisition channels, including the voltage measurement channel.  
4.6.1.1  
Features  
Dedicated 16 Bit Sigma Delta () ADC  
Fixed High Precision Divider  
Optional External Voltage Input “VOPT”  
Simultaneous Sampling with Current Channel  
Programmable Gain and Offset Compensation  
Calibration mode to compute compensation buffers  
Optional Chopper mode with moving average  
SINC3 + IIR Stage  
Programmable Low Pass Filter (LPF), Configuration shared with Current Measurement Channel  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
90/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.6.1.2  
Block diagram  
Input  
Swap  
VOPT  
ESD  
DIV28  
DIV28  
Decimator  
with IIR  
MUX  
Compensation  
LPF  
16Bit  
VSENSE  
ESD  
Vref  
Digital Chopper  
Figure 30. Voltage Measurement Channel  
The battery voltage is measured by default, via the VSENSE input. A high precision divider stage scales down the battery voltage by a  
fixed factor K =1/28, to a voltage below the internal reference voltage of the Sigma Delta ADC (VSENSE*K < V ). If an optional external  
REF  
voltage is measured, the multiplexer (MUX) is selected to feed the V  
input to the buffer.  
OPT  
4.7  
Temperature measurement - TSENSE  
4.7.1  
Introduction  
This chapter only gives a summary of the temperature sense module. Refer to Section 4.8, “Channel acquisition" for the complete  
description of all acquisition channels, including the temperature measurement channel.  
4.7.1.1  
Features  
Internal on chip Temperature Sensor  
Optional External Temperature Sensor Input (VTEMP)  
Dedicated 16-Bit Sigma Delta ADC  
Programmable Gain and Offset Compensation  
Optional External Sensor Supply (TSUP) with selectable capacitor  
Optional Measurement during Low Power mode to trigger recalibration  
4.7.1.2  
Block diagram  
TSUP  
Input  
Swap  
TSUP  
internal  
R1  
TempSense  
MUX  
Compensation  
Decimation  
16Bit  
VTEMP  
RVTEMP  
ESD  
CTSUP  
Vref  
R2  
Digital Chopper  
AGND  
Figure 31. Temperature measurement channel  
NOTE  
To minimize ground shift effects while using the external sensor option, R2 must be placed as close  
to the AGND pin as possible. C  
the capacitor.  
is optional. The supply output must be configured to operate with  
TSUP  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
91/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8  
Channel acquisition  
4.8.1  
Introduction  
This chapter documents the current, voltage, and temperature acquisition flow. The chapter is structured in the following sections.  
Section 4.8.2, “Channel structure overview"  
Section 4.8.3, “Current and voltage measurement"  
Section 4.8.3.1, “Shunt sense, PGA, and GCB (current channel only)"  
Section 4.8.3.2, “Voltage sense multiplexer (voltage channel only)"  
Section 4.8.3.3, “Sigma delta converter"  
Section 4.8.3.4, “Compensation"  
Section 4.8.3.5, “IIR/decimation/chopping stage"  
Section 4.8.3.6, “Low pass filter"  
Section 4.8.3.7, “Format and clamping"  
Section 4.8.4, “Temperature measurement channel"  
Section 4.8.4.1, “Compensation"  
Section 4.8.5, “Calibration"  
Section 4.8.6, “Memory map and registers"  
4.8.2  
Channel structure overview  
The MM912_637 offers three parallel measurement channels. Current, Voltage, and Temperature. The Voltage Channel is shared  
between the VSENSE and VOPT voltage source, the Temperature channel between ETEMP and ITEMP.  
SINC3  
+IIR  
Format &  
Clamp  
1
24  
16  
16  
I
PGA  
SD  
SD  
SD  
SINC1  
LPF  
10  
8
Gain  
(IGCx)  
Offset  
(COC)  
SINC3  
+IIR  
Format &  
Clamp  
1
V
T
SINC1  
LPF  
10  
8
Gain  
(VSGC)  
Offset  
(VOC)  
Format &  
Clamp  
1
SINC3  
SINC1  
8
8
Gain  
(ITGC/  
ETGC)  
Offset  
(ITOC/  
ETOC)  
Figure 32. Simplified measurement channel  
Figure 33 shows an overview of the detailed dependencies between the control and status registers and the channels. Refer to the  
following sections of this chapter for details.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
92/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
M ( ) E M V I C  
R
R
R
R
R
R
R
R
W R /  
W R /  
R / W  
W R / W R /  
W R / W R /  
R
R
R
R
R
R
R
W R /  
W R / W R / W R / W R / W R / W R / W R / W R /  
W
W R /  
W R /  
5
4
B
0 4 1  
5
0 2 1 2  
1 0 2 1  
0 8 1 2  
0 0 0 0  
W R / W R / W R / W R / W R / W R / W R / W R /  
3
0 E  
4
0 A  
0 0 B  
W R /  
R
)
M E I ( L C A  
5
B
0 4 1  
4
5
4
1 0 2  
0 2 1 2  
0 8 1 2  
1
0 0 B  
4
0 A  
3
0 E  
1 0 E  
R
R
W R /  
W R / W R / W R /  
R
R
0 0 0 0 0 0 0 0  
W R / W R /  
)
M (  
P
O M C C  
)
P ( M M O V C  
] 0 : 7 [  
C V O  
: 0 7 [ ] 2 . . 4 5 1 C O C  
)
M ( P M O T C  
] 0 : [ 7 C E T O  
: 0 [ 7 C O T I  
]
: 0 [ ] 9 2 . . 4 5 1 C I G  
] 0 : 9 [ C G V S  
] 0 : [ 7 C E T G  
: 0 [ 7 C G T I  
]
R
R
W R /  
R
R
t r o S h  
t r o S h  
g a D i  
W R / W R /  
R / W R / W  
W R / W R /  
W R /  
W R /  
W R / W R /  
W R /  
R
0 0 0  
R
g a D i  
W R / W R / W R / W R /  
R / W  
W R /  
R / W  
W R /  
W R / W R /  
t r o S h  
W R /  
W R /  
W R /  
N E O P  
P E O N E ( M  
t
T e s  
n e O p  
)
Figure 33. Channel complete overview  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
93/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.3  
Current and voltage measurement  
To guarantee synchronous voltage and current acquisition, both channels are implemented equal in terms of digital signal conditioning  
and timing. The analog signal conditioning, before the Sigma Delta Converter, is different to match the different sources.  
4.8.3.1  
Shunt sense, PGA, and GCB (current channel only)  
Current Channel specific analog signal conditioning.  
4.8.3.1.1  
Shunt sense  
An optional current sense feature is implemented to sense the presence of the current shunt resistor. Setting the OPEN bit (ACQ_CTL  
register), will activate the feature. The OPEN bit (ACQ_SR register) will indicate the shunt resistor open. The sense feature will detect an  
open condition for a shunt resistance R  
> ROPEN.  
SHUNT  
4.8.3.1.2  
Programmable gain amplifier (PGA)  
To allow a wide range of current levels to be measured, a programmable gain amplifier is implemented. Following the input chopper (see  
Section 4.8.3.5, “IIR/decimation/chopping stage"), the differential voltage is amplified by one of the 8 gains controlled by the Gain Control  
Block. The PGA has an internal offset compensation feature - see Section 4.8.4.1, “Compensation" and Section 4.8.5, “Calibration" for  
details.  
4.8.3.1.3  
Gain control block (GCB)  
To allow a transparent Gain adjustment with minimum MCU load, an automatic gain control has been implemented. The absolute output  
of the PGA is constantly compared with a programmable up and down threshold (ACQ_GCB register). The threshold is a D/A output  
according Table 100.  
Table 100. Gain control block - register  
ACQ_GCB D[7:0]  
0000xxxx  
0001xxxx  
0010xxxx  
0011xxxx  
0100xxxx  
0101xxxx  
0110xxxx  
0111xxxx  
1000xxxx  
1001xxxx  
1010xxxx  
1011xxxx  
1100xxxx  
1101xxxx  
1110xxxx  
1111xxxx  
GCB high (up) threshold  
ACQ_GCB D[7:0]  
xxxx0000  
xxxx0001  
xxxx0010  
xxxx0011  
xxxx0100  
xxxx0101  
xxxx0110  
xxxx0111  
xxxx1000  
xxxx1001  
xxxx1010  
xxxx1011  
xxxx1100  
xxxx1101  
xxxx1110  
xxxx1111  
GCB low (down) threshold  
1/16 V  
2/16 V  
3/16 V  
4/16 V  
5/16 V  
6/16 V  
7/16 V  
8/16 V  
9/16 V  
0
REF  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
1/16 V  
2/16 V  
3/16 V  
4/16 V  
5/16 V  
6/16 V  
7/16 V  
8/16 V  
9/16 V  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
10/16 V  
11/16 V  
12/16 V  
13/16 V  
14/16 V  
15/16 V  
16/16 V  
REF  
REF  
REF  
REF  
REF  
REF  
REF  
10/16 V  
11/16 V  
12/16 V  
13/16 V  
14/16 V  
15/16 V  
REF  
REF  
REF  
REF  
REF  
REF  
Once the programmed threshold is reached, the gain is adjusted to the next level. The currently active gain setting can be read in the  
IGAIN[2:0] register. Once the gain has been adjusted by the GCB, the PGAG bit will be set.  
The automatic Gain Control can be disabled by clearing the AGEN bit. In this case, writing the IGAIN[2:0] register will allow manual gain  
control.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
94/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
The IGAIN[2:0] register content does determine the offset compensation register access, as there are  
8 individual offset register buffers implemented, accessed through the same COC[7:0] register.  
4.8.3.2  
Voltage sense multiplexer (voltage channel only)  
A multiplexer has been implemented to select between the VSENSE or VOPT voltage input. The OPTE bit controls the multiplexer. Both  
input signals are divided by a fixed DIV28 divider.  
NOTE  
There is no further state machine separation of the two voltage channels. The software has to assure  
all compensation registers are configured properly after changing the multiplexer. Both voltage  
source conversion results will be stored in the same result register.  
The divided and multiplexed voltages will be routed through the optional chopper (see Section 4.8.3.5, “IIR/decimation/chopping stage")  
before entering the Sigma Delta converter stage.  
4.8.3.3  
Sigma delta converter  
Overview  
4.8.3.3.1  
A high resolution ADC is needed for current and battery voltage measurements of the MM912_637. A second order sigma delta modulator  
based architecture is chosen.  
4.8.3.4  
Compensation  
Following the optional chopper stage, the sigma delta bit stream is first gain and then offset compensated using the compensation  
registers.  
The compensation stages for both channels can be completely bypassed by clearing the CCOMP / VCOMP bits.  
4.8.3.4.1  
Gain compensation  
Table 101 shows the gain compensation register for the current and voltage channel. At system startup, the factory trimmed values have  
to be copied into the VSGC and IGCx registers (see Section 5.2, “IFR trimming content and location").  
NOTE  
There are 8 individual Gain compensation registers for the current measurement channels different  
PGA gains with 8 individual gain trim values present in the IFR trimming flash.  
Based on the voltage channel multiplexer configuration, a different trim gain compensation value has  
to be used in the compensation register. The compensation register content has to be updated when  
changing the multiplexer setting.  
Table 101. Gain compensation - voltage and current channel  
VSGC[9:0]  
Voltage channel gain  
Current channel gain  
IGCx[9:0]  
0x3FF  
0x3FE  
0x3FD  
.
1.3174  
1.3169  
1.3164  
.
1.7832  
1.7822  
1.7812  
.
.
.
.
0x203  
0x202  
0x201  
0x200 (default)  
1.0694  
1.0689  
1.0684  
1.0679  
1.2872  
1.2862  
1.2852  
1.2842  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
95/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 101. Gain compensation - voltage and current channel (continued)  
VSGC[9:0]  
Voltage channel gain  
Current channel gain  
IGCx[9:0]  
0x1FF  
0x1FE  
0x1FD  
.
1.0674  
1.0669  
1.0664  
.
1.2832  
1.2822  
1.2812  
.
.
.
.
0x002  
0x001  
0x000  
0.8189  
0.8184  
0.8179  
0.7862  
0.7852  
0.7842  
4.8.3.4.2  
Offset compensation  
Table 102 shows the offset compensation register for the current and voltage channel. At system startup, the factory trimmed values have  
to be copied into the VOC and COC registers (see Section 5.2, “IFR trimming content and location").  
NOTE  
Based on the voltage channel multiplexer and copper configuration, a different trim offset  
compensation value has to be used in the compensation register. The compensation register content  
has to be updated when changing the multiplexer setting.  
While there is only one offset compensation register VOC[7:0] for the voltage channel, there are 8  
individual offset compensation registers for the current channel. The access happens through the  
COC[7:0] register mapped, based on the IGAIN[2:0] register content.  
Table 102. Offset compensation - voltage and current channel  
VOC[7:0]  
(110)  
(110)  
Voltage channel offset  
Current channel offset  
COC[7:0]  
0x7F  
+9.073  
+9.002  
+8.93  
.
+15.092  
+14.974  
+14.855  
.
0x7E  
0x7D  
.
.
0x03  
0x02  
0x01  
0x00 (default)  
0xFF  
0xFE  
0xFD  
.
.
.
0.214  
0.143  
0.071  
0
+0.357  
+0.238  
+0.119  
0
-0.071  
-0.143  
-0.214  
.
-0.119  
-0.238  
-0.357  
.
.
.
.
0x82  
0x81  
-9.002  
-9.073  
-14.974  
-15.092  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
96/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 102. Offset compensation - voltage and current channel (continued)  
VOC[7:0]  
(110)  
(110)  
Voltage channel offset  
Current channel offset  
COC[7:0]  
0x80  
-9.145  
-15.211  
Notes  
110. SD input related (mV)  
4.8.3.5  
IIR/decimation/chopping stage  
Functional description  
4.8.3.5.1  
The chopper frequency is set to one eighth of the decimator frequency (512 kHz typ). On each phase, four decimation cycles are  
necessary to get a steady signal. The equation of the IIR is y =.x +(1-).y .  
n+1  
n
n
The parameter can be configured by the IIRC[2:0] register. See Section 4.8.6.3.18, “I and V chopper control register (ACQ_CVCR (lo))".  
The decimation process is then completed by a programmable (DEC[2:0]) sinc3 filter, which outputs a 0.5...8 kS/s signal. The modulated  
noise is removed by an averaging filter (SINC1; L=4), which has an infinite rejection at the chopping frequency.  
4.8.3.5.2  
Latency and throughput  
The throughput is 512 kHz/DF with DF configurable from 64 to 1024.  
The latency is given by (4+3*IIR+3*Avger+N_LPF)*DF/512 kHz where:  
IIR=1 if IIR is enabled (0 otherwise),  
Avger=1 if the chopper mode is activated (0 otherwise),  
N_LPF is the LPF coefficient number.  
4.8.3.6  
Low pass filter  
To achieve the required attenuation of the measured voltage and current signals in the frequency domain, a programmable low-pass filter  
following the SINC3+IIR filter, is implemented for both channels with shared configuration registers to deliver the equivalent filtering.  
The following filter characteristic is implemented:  
F
= 100 Hz (Att100 Hz)  
PASS  
F
= 500 Hz (Att500 Hz)  
STOPP  
The number of filter coefficients used can be programmed in the ACQ_LPFC[3:0] register. The filter can be bypassed completely clearing  
the LPFEN bit.  
The filter uses an algorithmic and logic unit (ALU) for calculating the filtered output data, depending on the incoming data stream at “DATA  
IN” and the low-pass coefficients (A0...15) at the input “COEFF”, 16-bit width of each coefficient (See 4.8.6.3.22, “Low pass filter coefficient  
Ax (LPF_Ax (hi))"). The filter structure calculates during one cycle (Tcyc=1/Fadc) the filtered data output.  
Y(n)  
……  
+
+
+
+
+
+
……  
a13  
a14  
a0  
a15  
a1  
a2  
-1  
-1  
-1  
-1  
-1  
Z
Z
Z
Z
……  
Z
X(n)  
y(n) = a0.x(n)+a1.x(n-1)+a2.x(n-2)+a3.x(n-3)+a4.x(n-4)+a5.x(n-5)+a6.x(n-6)+a7.x(n-7)  
+a8.x(n-8)+a9.x(n-9)+a10.x(n-10)+a11.x(n-11)+a12.x(n-12)+a13.x(n-13)+a14.x(n-14)+a15.x(n-15)  
Figure 34. FIR structure  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
97/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
-1  
Z
Unit delay is done at a programmable frequency, depending on the decimation factor programmed in the DEC[2:0] register. See  
Table 120.  
NOTE  
There is no decimation from SINC3 to the LPF output, LPF uses same output rate than decimator.  
It's therefore possible to select an output update rate independent of the filter characteristic and  
bandwidth.  
The coefficient vector consists of 16*16-bit elements and is free programmable, the maximum response time for 16 coefficients structure  
is 16*1/output rate. The following filter function can be realized.  
M
H (z) a * zi  
LP  
i
i0  
LP filter function  
Eqn. 3  
The coefficients aj are the elements of the coefficient vector and determine the filter function. M <= 16. It's possible to realize FIR filter  
functions. A typical total frequency response of the decimator and the programmable LP filter is given in Figure 35.  
0
0
20  
40  
Gtot( f)  
60  
80  
100  
100  
3
4
10  
100  
1
10  
1 10  
10  
f
10000  
Figure 35. Typical total filter response Sinc3 (D=128), LP filter (FIR type with 15 coefficients used)  
4.8.3.7  
Format and clamping  
The output data stream is formatted into its final size for both channels (16-Bit for Voltage and 24-Bit for Current). The current result will  
contain the gain information as part of the result. See Section 4.8.6.3.12, “Current measurement result (ACQ_CURR1 / ACQ_CURR0)"  
and Section 4.8.6.3.13, “Voltage measurement result (ACQ_VOLT)". Both results are written into the corresponding result registers and  
will issue an IRQ if enabled.  
The internal voltage measurement results (no compensation active) are clamped to maximum and minimum values of 0xFFFF and 0x0000  
respectively. Terminal voltages outside this range will result in the respective max or min clamped values. The internal current  
measurement results (no compensation active) are clamped to maximum and minimum values of 0x0FFFF and 0x10000 respectively.  
Terminal voltages outside this range will result in the respective max or min clamped values.  
NOTE  
Both channels will perform synchronized conversions when enabled with a single write to the  
ACQ_CTL register.  
As the voltage channel is not active during low power mode, the synchronicity might not be given after  
wake-up, and has to be re-established by restarting both channels.  
Entering low power mode with the current / temperature channel enabled will have the channel(s)  
remain active during low power mode.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
98/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.4  
Temperature measurement channel  
The MM912_637 can measure the temperature from an internal built-in temperature sensor, or from an external temperature sensor  
connected to the VTEMP pin. The external temperature sensor is supplied via the TSUP pin. The measurement channel is the same for  
the internal and external temperature sensor.  
The temperature measurement channel uses the same Sigma Delta (SD) converter implementation as the current and voltage channel,  
followed by a fixed decimation (L=128). A selectable chopper mode is implemented to compensate for offset errors. Once the chopper is  
enabled, an average (sinc1, L=2) is active.  
Once the measurement is enabled, the temperature result registers are updated with the channel update rate. When both measurements  
are enabled, both temperature sensors are measured successively where the measurement is started with the internal sensor.  
The internal temperature measurement result (no compensation active) of 0x0000 represents 0K, the maximum 0xFFFF = 523K (typ).  
The result data is stored into the result registers ACQ_ITEMP and ACQ_ETEMP (both 16-bit). During an over range event, the ADC is  
limited to the maximum value. The result of the internal temperature measurement is utilized to generate the calibration request. See  
Section 4.8.5, “Calibration".  
4.8.4.1  
Compensation  
The compensation for the temperature channels is implemented similar to the current and voltage channel.  
Table 103. Gain compensation - temperature channel  
ITGC[7:0]  
Temperature channel gain compensation  
ETGC[7:0]  
0xFF  
1.124  
1.123  
1.122  
.
0xFE  
0xFD  
.
.
0x83  
0x82  
0x81  
0x80 (default)  
0x7F  
0x7E  
0x7D  
.
.
1.003  
1.002  
1.001  
1.000  
0.999  
0.998  
0.997  
.
.
.
0x02  
0x01  
0x00  
0.877  
0.876  
0.875  
Table 104. Offset compensation - temperature channel(111)  
ITOC[7:0]  
(112)  
Temperature channel offset compensation  
ETOC[7:0]  
0x7F  
+9.689  
+9.613  
+9.537  
0x7E  
0x7D  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
99/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 104. Offset compensation - temperature channel(111)  
ITOC[7:0]  
(112)  
Temperature channel offset compensation  
ETOC[7:0]  
.
.
.
.
0x03  
0x02  
0x01  
0x00 (default)  
0xFF  
0xFE  
0xFD  
.
+0.229  
+0.153  
+0.076  
0
-0.076  
-0.153  
-0.229  
.
.
.
0x82  
0x81  
0x80  
-9.613  
-9.689  
-9.766  
Notes  
111. Typical values based on default gain setting  
112. SD input related (mV)  
NOTE  
Factory trimmed compensation values are only available for the internal temperature channel.  
4.8.5  
Calibration  
To ensure the maximum precision of the current and voltage sense module, several stages of calibration are implemented to compensate  
temperature effects. The calibration concept combines the availability of FLASH and the temperature information to guarantee the  
measurement accuracy under all functional conditions. The trimming and calibration procedures are split in three different categories:  
Power On-, Calibration Request-, and Optional Verification Procedures.  
4.8.5.1  
System power on procedure  
Several device parameters are guaranteed with full precision after system trimming only. During final test of the device, trim values are  
computed, verified, and stored into the system FLASH memory. To ensure optimum system performance, the following power on  
procedure has to be performed during power on. As the device is typically constantly powered during its operation, this operation has to  
be performed typically one time only. During a system power loss or low power reset condition, the application software has to ensure the  
procedure executes again.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
100/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Power On  
Procedure  
(One time only)  
Startup Trimming  
Bandgap Trim (BG1,2,3)  
LIN Slope Trim  
LVT Trim  
LPOSC Trim  
Build Gain Compensation  
Reference Table  
Build Current Channel GC  
Look Up table  
Build VSENSE Channel GC  
Look Up table  
Build VOpt Channel GC  
Look Up table  
Startup Calibration  
VSENSE / VOPT Channel  
Offset Compensation1  
ITEMP Channel Offset  
Compensation  
ITEMP Channel Gain  
Compensation  
PGA Auto Zero Sequence  
Current / Voltage Channel  
Gain Comp. based on  
ITEMP and LookUp Table  
Current Channel Offset  
Compensation procedure2  
Program Calibration IRQ  
Temperature Thresholds  
1: Based on first channel used  
2: In case copper mode is not used  
Figure 36. Power on procedure  
4.8.5.1.1  
Startup trimming  
To ensure all analog die modules are being trimmed properly, the following FLASH information (located in the MCU IFR from 0x01_80D0  
to 0x01_80D9) has to be copied to the analog die register 0xE0 to 0xE9. This trimming includes the Band Gap Reference adjustment for  
the 3 system Band Gap circuits, The LIN slope adjustment (TRIM_LIN), the Low Voltage Threshold (TRIM_LVT), and the Low Power  
Oscillator (TRIM_OSC). See Section 5, “MM912_637 - trimming".  
NOTE  
The LPOSC[12:0] trim will adjust the low power oscillator to its specified accuracy. This will result in  
the dependent Watchdog timing to be accurate after writing the trimming information.  
4.8.5.1.2  
Gain compensation look up table  
In order to prepare the system for the optional calibration interrupt service during operation, it is be beneficial to create a look up table for  
the voltage and current channel gain compensation over temperature.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
101/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
For all current and voltage channel gain buffers, there are corresponding ROOM temperature optimum trim values stored in the IFR  
FLASH. For HOT (125 °C) and COLD (-40 °C) temperature, the adjustment towards the ROOM value is stored.  
Table 105. Gain compensation buffer optimum  
OFFSET  
HEX  
Byte description  
Global  
address  
Content  
DEC  
00  
01  
02  
03  
04  
05  
06  
07  
08  
09  
10  
11  
7
6
5
4
3
2
1
0
0x01_80C0  
0x01_80C1  
0x01_80C2  
0x01_80C3  
0x01_80C4  
0x01_80C5  
0x01_80C6  
0x01_80C7  
0x01_80C8  
0x01_80C9  
0x01_80CA  
0x01_80CB  
0x01_80CC  
0x01_80CD  
0x01_80CE  
0x01_80CF  
0x01_80DE  
0x01_80DF  
0x01_80E0  
0x01_80E1  
00  
01  
02  
03  
04  
05  
06  
07  
08  
09  
0A  
0B  
0C  
0D  
0E  
0F  
1E  
1F  
20  
21  
IGC4[9:8]  
Current Channel Gain (4) Compensation - Room Temp  
Current Channel Gain (8) Compensation - Room Temp  
IGC4[7:0]  
IGC8[7:0]  
IGC8[9:8]  
IGC16[9:8]  
IGC32[9:8]  
IGC64[9:8]  
IGC128[9:8]  
IGC256[9:8]  
IGC512[9:8]  
VSGC[9:8]  
VOGC[9:8]  
Current Channel Gain (16) Compensation - Room  
Temp  
IGC16[7:0]  
IGC32[7:0]  
IGC64[7:0]  
IGC128[7:0]  
IGC256[7:0]  
IGC512[7:0]  
VSGC[7:0]  
VOGC[7:0]  
Current Channel Gain (32) Compensation - Room  
Temp  
Current Channel Gain (64) Compensation - Room  
Temp  
Current Channel Gain (128) Compensation - Room  
Temp  
12  
13  
14  
15  
30  
31  
32  
33  
Current Channel Gain (256) Compensation - Room  
Temp  
Current Channel Gain (512) Compensation - Room  
Temp  
VSENSE Channel Gain Compensation - Room Temp  
VOPT Channel Gain Compensation - Room Temp  
VSENSE Channel Gain Compensation - COLD  
0x01_80EC  
0x01_80ED  
2C  
2D  
44  
45  
COMP_VSG_COLD[7:0]  
COMP_VSG_HOT[7:0]  
(113)  
Temp  
VSENSE Channel Gain Compensation - HOT  
(113)  
Temp  
(113)  
0x01_80EE  
0x01_80EF  
2E  
2F  
46  
47  
COMP_VOG_COLD[7:0]  
COMP_VOG_HOT[7:0]  
VOPT Channel Gain Compensation - COLD Temp  
(113)  
VOPT Channel Gain Compensation - HOT Temp  
Current Channel Gain (4) Compensation - COLD  
0x01_80F0  
0x01_80F1  
0x01_80F2  
0x01_80F3  
0x01_80F4  
0x01_80F5  
30  
31  
32  
33  
34  
35  
48  
49  
50  
51  
52  
53  
IGC4_COLD[7:0]  
IGC4_HOT[7:0]  
IGC8_COLD[7:0]  
IGC8_HOT[7:0]  
IGC16_COLD[7:0]  
IGC16_HOT[7:0]  
(113)  
Temp  
Current Channel Gain (4) Compensation - HOT  
(113)  
Temp  
Current Channel Gain (8) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (8) Compensation - HOT  
(113)  
Temp  
Current Channel Gain (16) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (16) Compensation - HOT  
(113)  
Temp  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
102/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 105. Gain compensation buffer optimum (continued)  
OFFSET  
Byte description  
Global  
address  
Content  
HEX  
DEC  
7
6
5
4
3
2
1
0
Current Channel Gain (32) Compensation - COLD  
0x01_80F6  
0x01_80F7  
0x01_80F8  
0x01_80F9  
0x01_80FA  
0x01_80FB  
0x01_80FC  
0x01_80FD  
0x01_80FE  
36  
37  
38  
39  
3A  
3B  
3C  
3D  
3E  
3F  
54  
IGC32_COLD[7:0]  
IGC32_HOT[7:0]  
IGC64_COLD[7:0]  
IGC64_HOT[7:0]  
IGC128_COLD[7:0]  
IGC128_HOT[7:0]  
IGC256_COLD[7:0]  
IGC256_HOT[7:0]  
IGC512_COLD[7:0]  
IGC512_HOT[7:0]  
(113)  
Temp  
Current Channel Gain (32) Compensation - HOT  
55  
56  
57  
58  
59  
60  
61  
62  
63  
(113)  
Temp  
Current Channel Gain (64) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (64) Compensation - HOT  
(113)  
Temp  
Current Channel Gain (128) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (128) Compensation - HOT  
(113)  
Temp  
Current Channel Gain (256) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (256) Compensation - HOT  
(113)  
Temp  
Current Channel Gain (512) Compensation - COLD  
(113)  
Temp  
Current Channel Gain (512) Compensation - HOT  
0x01_80FF  
Notes  
(113)  
Temp  
113. 7-Bit character with bit 7 (MSB) as sign (0 = “+”; 1 = “-”) with the difference to the corresponding room temperature value (e.g. 10000010 = “-2”).  
To create the look up table, a linear interpolation of the gain adjustment has to be done between the three given temperatures, based on  
the temperature step width specified (TCALSTEP).  
HOT  
+x  
+2  
+1  
0
ROOM  
-1  
-2  
-x  
COLD  
Figure 37. Look up table creation  
4.8.5.1.3  
Startup calibration  
The power on trimming / calibration procedure is finalized by performing the start up calibration.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
103/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.5.1.3.1 VSENSE/VOPT channel offset compensation and ITEMP channel gain/offset  
compensation  
Copying the default compensation values, according to Table 106, will establish the optimum offset compensation for the VSENSE and  
VOPT channels, as well as the optimum gain and offset compensation for the internal temperature sensor.  
Table 106. Voltage/temp trim  
OFFSET  
Byte description  
Target register  
Name  
Global  
Address  
HEX  
DEC  
26  
7
6
5
4
3
2
1
0
Offset  
(114)  
0x01_80DA  
0x01_80DB  
0x01_80DC  
0x01_80DD  
0x01_80E2  
0x01_80E3  
1A  
1B  
1C  
1D  
22  
23  
VOC_S[7:0]  
VOC_O[7:0]  
COMP_VO  
COMP_VO  
COMP_VO  
COMP_VO  
COMP_ITO  
COMP_ITG  
0xAA  
0xAA  
0xAA  
0xAA  
(114)  
(114)  
(114)  
27  
28  
VOC_S_CHOP[7:0] (Chopper Mode)  
VOC_O_CHOP[7:0] (Chopper Mode)  
ITO[7:0]  
29  
34  
0xD0  
0xD1  
35  
ITG[7:0]  
Notes  
114. Based on the selection of the voltage measurement source (VSENSE or VOPT) and the activation of chopper mode. VOC_S is for VSENSE with  
Chopper mode OFF, VOC_O for VOPT with Chopper mode OFF, VOC_S_CHOP for VSENSE with Chopper mode ON, VOC_O_CHOP for VOPT  
with Chopper mode ON.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
104/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.5.1.3.2 PGA auto zero sequence  
The following procedure has to be performed for the PGA (Programmable Gain Amplifier) Auto Zero (AZ).  
1. Write a “1” to the PGAO bit and its mask in the COMP_CTL register (0xA0)  
2. Approximately 6.5 ms later, PGAOF will become set at to “1” (Flag needs to be polled)  
3. Exit the PGAO mode by writing “0” in PGA0 and its mask being a “1”  
4. Clear the PGAOF flag by writing “1”  
NOTE  
The new offset compensation data can be observed in the (PGAOC4...512[10:0]) registers.  
The sequence will require 3352 clock cycles of the D2DFCLK (512kHz), typically 6.5 ms.  
4.8.5.1.3.3 Current and voltage channel gain compensation based on ITEMP from look up  
table  
After the first reading of the temperature channel measurement, the current and voltage channel gain compensation buffers must be  
written with the corresponding look up table value (see Section 4.8.5.1.2, “Gain compensation look up table").  
4.8.5.1.3.4 Current channel offset compensation procedure (chopper off only)  
If the chopper feature is not used for the current measurement channel, the offset should be compensated using the following procedure  
with the highest decimation selected and the LPF active.  
Short PGA inputs  
PGAZ(M) = 1  
Start regular SD Current Channel  
Conversion with Compensation  
disabled (CCOMP(M) = 0)  
Wait for conversion complete IRQ  
and adjust offset compensation  
buffers with result.  
Figure 38. Current channel offset compensation sequence  
4.8.5.1.3.5 Program calibration IRQ temperature thresholds  
To finalize the startup sequence, the new temperature limits must be programmed into the Calibration Temperature Limits (TCMAX[15:0]  
and TCMIN[15:0]), and the Calibration Request interrupt must be enabled.  
4.8.5.2  
Calibration request procedure  
During normal system operation (in Normal and Low Power mode), a calibration request interrupt / wake-up will indicate the device  
temperature changed outside the range for the programmed Current and Voltage Channel Gain Compensation.  
During a calibration request interrupt (wake-up), the Current and Voltage Channel Gain Compensation buffers have to be updated with  
the corresponding values stored in the look up table created upon system start up (see Section 4.8.5.1.2, “Gain compensation look up  
table"). The the new temperature limits must be programmed into the Calibration Temperature Limits (TCMAX[15:0] and TCMIN[15:0])  
before leaving the interrupt service routine.  
4.8.5.3  
Verification procedures  
As an optional feature, upon application requirement, the proper function of the current and voltage measurement channels can be verified  
by connecting a special calibration reference to the input of the channels.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
105/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Connect Calibration Reference to  
Channel Inputs  
(DIAGI(M) = DIAGV(M) = 1)  
Start regular SD Conversion.  
Wait for conversion complete IRQ.  
Verify result based on the reference  
measurements  
Disconnect Calibration Reference to  
Channel Inputs  
(DIAGI(M) = DIAGV(M) = 0)  
Table 107 shows the location of the diagnostic reference measurements.  
Note: This table is unpopulated for Analog Option 1 devices.  
Table 107. Diagnostic measurement flash location  
OFFSET  
Global  
Byte description  
Address  
HEX  
24  
DEC  
36  
7
6
5
4
3
2
1
0
0x01_80E4  
0x01_80E5  
0x01_80E6  
0x01_80E7  
0x01_80E8  
0x01_80E9  
0x01_80EA  
BG3 diag measurement from Vsense channel after cal at room  
BG3 diag measurement from Vopt channel after cal at room  
25  
37  
26  
38  
27  
39  
28  
40  
29  
41  
BG3 diag measurement from I channel (gain4) at room  
2A  
42  
4.8.6  
Memory map and registers  
Overview  
4.8.6.1  
This section provides a detailed description of the memory map and registers.  
4.8.6.2  
Module memory map  
The memory map for the Acquisition, Compensation, and LPF module is given in Table 63.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
106/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
R
W
R
0
0
0
0
0
0
0
0
AHCRM  
0
OPTEM  
OPENEM CVMIEM ETMENM ITMENM  
VMENM  
CMENM  
ACQ_CTL  
0x58  
Acquisition control register  
OPTE  
PGAG  
OPENE  
VMOW  
CVMIE  
ETMEN  
ITMEN  
ITM  
VMEN  
VM  
CMEN  
CM  
W
R
AHCR  
AVRF  
ACQ_SR (hi)  
0x5A  
CMOW  
ETM  
Acquisition status register  
W
R
Write 1 will clear the flags  
ACQ_SR (lo)  
0x5B  
OPEN  
0
0
0
0
0
VTH  
ETCHOP  
ITCHOP  
VCHOP  
CCHOP  
Acquisition status register  
W
R
0
0
0
0
0
ETCHOP  
M
CVCHOP  
M
W
TCOMPM VCOMPM CCOMPM LPFENM  
ITCHOPM  
AGENM  
ACQ_ACC1  
0x5C  
Acquisition chain control 1  
R
W
R
TCOMP  
VCOMP  
CCOMP  
0
LPFEN  
0
ETCHOP  
ITCHOP  
CVCHOP  
AGEN  
0
0
0
0
0
0
W
R
ZEROM  
ECAPM  
TADCGM VADCGM CADCGM  
TDENM  
VDENM  
CDENM  
ACQ_ACC0  
0x5E  
Acquisition chain control 0  
ZERO  
0
ECAP  
0
TADCG  
0
VADCG  
0
CADCG  
0
TDEN  
VDEN  
CDEN  
W
R
ACQ_DEC  
0x60  
DEC[2:0]  
BG2EN  
Decimation Rate  
W
R
ACQ_BGC  
0x61  
0
0
0
0
BG3EN  
BG1EN  
BGADC[1:0]  
BGLDO  
0
BandGap control  
W
R
ACQ_GAIN  
0
0
0x62  
IGAIN[2:0]  
PGA gain  
W
R
ACQ_GCB  
0x63  
D[7:0]  
GCB threshold  
W
R
ACQ_ITEMP (hi)  
0x64  
ITEMP[15:8]  
ITEMP[7:0]  
EEMP[15:8]  
Internal temp. measurement result  
W
R
ACQ_ITEMP (lo)  
0x65  
Internal temp. measurement result  
W
R
ACQ_ETEMP (hi)  
0x66  
0x67  
External temp. measurement  
result  
W
R
ACQ_ETEMP (lo)  
EEMP[7:0]  
External temp. measurement  
result  
W
R
W
R
0
0
0
0
0
0
0
0
0x68  
0x69  
Reserved  
ACQ_CURR1  
CURR[23:16]  
CURR[15:8]  
CURR[7:0]  
Current measurement result  
W
R
W
R
ACQ_CURR0  
Current measurement result  
0x6A  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
107/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
R
VOLT[15:8]  
W
R
ACQ_VOLT  
Voltage measurement result  
0x6C  
VOLT[7:0]  
W
R
ACQ_LPFC  
0
0
0
0
0
0
0
0
0x6E  
0x6F  
LPFC[3:0]  
Low pass filter coefficient number  
W
R
0
0
0
0
Reserved  
W
R
ACQ_TCMP  
Low power trigger current  
measurement period  
W
R
0x70  
0x72  
TCMP[15:0]  
THF[7:0]  
W
R
ACQ_THF  
Low power current threshold  
filtering period  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x73  
0x74  
0x75  
0x76  
0x77  
0x78  
0x79  
0x7A  
0x7B  
0x7C  
0x7D  
0x7E  
0x7F  
0x80  
0x81  
Reserved  
ACQ_CVCR (hi)  
I and V chopper control register  
ACQ_CVCR (lo)  
0
0
W
R
DBTM[1:0]  
DBT[1:0]  
IIRCM[2:0]  
PGAFM  
IIRC[2:0]  
PGAF  
I and V chopper control register  
ACQ_CTH  
W
R
CTH[7:0]  
Low power current threshold  
W
R
0
0
0
0
0
0
0
0
0
Reserved  
W
R
ACQ_AHTH1 (hi)  
Low power Ah counter threshold  
ACQ_AHTH1 (lo)  
W
R
AHTH[30:16]  
AHTH[15:0]  
Low power Ah counter threshold  
ACQ_AHTH0 (hi)  
W
R
Low power Ah counter threshold  
ACQ_AHTH0 (lo)  
W
R
Low power Ah counter threshold  
ACQ_AHC1 (hi)  
W
R
AHC[31:24]  
AHC[23:16]  
AHC[15:8]  
AHC[7:0]  
Low power Ah counter  
ACQ_AHC1 (lo)  
W
R
Low power Ah counter  
ACQ_AHC0 (hi)  
W
R
Low power Ah counter  
ACQ_AHC0 (lo)  
W
R
Low power Ah counter  
LPF_A0 (hi)  
W
R
A0 filter coeff  
W
R
A0[15:0]  
LPF_A0 (lo)  
A0 filter coeff  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
108/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
LPF_A1 (hi)  
A1 filter coeff  
LPF_A1 (lo)  
A1 filter coeff  
LPF_A2 (hi)  
A2 filter coeff  
LPF_A2 (lo)  
A2 filter coeff  
LPF_A3 (hi)  
A3 filter coeff  
LPF_A3 (lo)  
A3 filter coeff  
LPF_A4 (hi)  
A4 filter coeff  
LPF_A4 (lo)  
A4 filter coeff  
LPF_A5 (hi)  
A5 filter coeff  
LPF_A5 (lo)  
A5 filter coeff  
LPF_A6 (hi)  
A6 filter coeff  
LPF_A6 (lo)  
A6 filter coeff  
LPF_A7 (hi)  
A7 filter coeff  
LPF_A7 (lo)  
A7 filter coeff  
LPF_A8 (hi)  
A8 filter coeff  
LPF_A8 (lo)  
A8 filter coeff  
LPF_A9 (hi)  
A9 filter coeff  
LPF_A9 (lo)  
A9 filter coeff  
LPF_A10 (hi)  
A10 filter coeff  
LPF_A10 (lo)  
A10 filter coeff  
LPF_A11 (hi)  
A11 filter coeff  
LPF_A11 (lo)  
A11 filter coeff  
R
W
R
0x82  
0x83  
0x84  
0x85  
0x86  
0x87  
0x88  
0x89  
0x8A  
0x8B  
0x8C  
0x8D  
0x8E  
0x8F  
0x90  
0x91  
0x92  
0x93  
0x94  
0x95  
0x96  
0x97  
A1[15:0]  
A2[15:0]  
A3[15:0]  
A4[15:0]  
A5[15:0]  
A6[15:0]  
A7[15:0]  
A8[15:0]  
A9[15:0]  
A10[15:0]  
A11[15:0]  
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
109/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
LPF_A12 (hi)  
A12 filter coeff  
LPF_A12 (lo)  
A12 filter coeff  
LPF_A13 (hi)  
A13 filter coeff  
LPF_A13 (lo)  
A13 filter coeff  
LPF_A14 (hi)  
A14 filter coeff  
LPF_A14 (lo)  
A14 filter coeff  
LPF_A15 (hi)  
A15 filter coeff  
LPF_A15 (lo)  
A15 filter coeff  
R
W
R
0x98  
0x99  
0x9A  
0x9B  
0x9C  
0x9D  
0x9E  
0x9F  
A12[15:0]  
A13[15:0]  
A14[15:0]  
A15[15:0]  
W
R
W
R
W
R
W
R
W
R
W
R
W
R
0
0
0
0
0
0
0
W
R
BGCALM[1:0]  
PGAZM  
PGAOM  
DIAGVM  
DIAGIM  
CALIEM  
CALIE  
COMP_CTL  
Compensation control register  
0xA0  
BGCAL[1:0]  
PGAZ  
0
PGAO  
DIAGV  
0
DIAGI  
0
W
R
COMP_SR  
Compensation status register  
COMP_TF  
0
0
BGRF  
PGAOF  
0
CALF  
0xA2  
0xA3  
W
R
Write 1 will clear the flags  
0
0
0
0
TMF[2:0]  
Temperature filtering period  
W
R
W
R
COMP_TMAX  
Max temp before recalibration  
0xA4  
0xA6  
TCMAX[15:0]  
TCMIN[15:0]  
W
R
W
R
COMP_TMIN  
Min temp before recalibration  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0xA8  
0xA9  
0xAA  
Reserved  
Reserved  
W
R
W
R
COMP_VO  
Offset voltage compensation  
COMP_IO  
VOC[7:0]  
COC[7:0]  
W
R
0xAB  
0xAC  
Offset current compensation  
window  
W
R
W
R
0
0
0
0
0
0
VSGC[9:8]  
COMP_VSG  
Gain voltage comp. vsense  
channel  
VSGC[7:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
110/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
R
0
0
0
0
0
0
0
0
0xAE  
0xAF  
Reserved  
Reserved  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
IGC4[9:8]  
IGC8[9:8]  
IGC16[9:8]  
IGC32[9:8]  
IGC64[9:8]  
W
R
COMP_IG4  
Gain current compensation 4  
0xB0  
0xB2  
0xB4  
0xB6  
0xB8  
0xBA  
0xBC  
0xBE  
0xC0  
0xC2  
IGC4[7:0]  
IGC8[7:0]  
IGC16[7:0]  
IGC32[7:0]  
IGC64[7:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
COMP_IG8  
Gain current compensation 8  
W
R
W
R
COMP_IG16  
Gain current compensation 16  
W
R
W
R
COMP_IG32  
Gain current compensation 32  
W
R
W
R
COMP_IG64  
Gain current compensation 64  
W
R
IGC128[9:8]  
IGC256[9:8]  
IGC512[9:8]  
W
R
COMP_IG128  
Gain current compensation 128  
IGC128[7:0]  
W
R
0
0
W
R
COMP_IG256  
Gain current compensation 256  
IGC256[7:0]  
W
R
0
0
W
R
COMP_IG512  
Gain current compensation 512  
IGC512[7:0]  
W
R
0
0
PGAOC4[10:8]  
W
R
COMP_PGAO4  
Offset PGA compensation 4  
PGAOC4[7:0]  
W
R
0
0
PGAOC8[10:8]  
W
R
COMP_PGAO8  
Offset PGA compensation 8  
PGAOC8[7:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
111/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 108. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(115)(116)  
R
0
0
0
0
0
PGAOC16[10:8]  
W
R
COMP_PGAO16  
Offset PGA compensation 16  
0xC4  
0xC6  
0xC8  
0xCA  
0xCC  
0xCE  
PGAOC16[7:0]  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
PGAOC32[10:8]  
PGAOC64[10:8]  
PGAOC128[10:8]  
PGAOC256[10:8]  
PGAOC512[10:8]  
W
R
COMP_PGAO32  
Offset PGA compensation 32  
PGAOC32[7:0]  
W
R
0
0
W
R
COMP_PGAO64  
Offset PGA compensation 64  
PGAOC64[7:0]  
W
R
0
0
W
R
COMP_PGAO128  
Offset PGA compensation 128  
PGAOC128[7:0]  
W
R
0
0
W
R
COMP_PGAO256  
Offset PGA compensation 256  
PGAOC256[7:0]  
W
R
0
0
W
R
COMP_PGAO512  
Offset PGA compensation 512  
PGAOC512[7:0]  
ITOC[7:0]  
W
R
COMP_ITO  
Internal temp. offset compensation  
COMP_ITG  
0xD0  
0xD1  
W
R
ITGC[7:0]  
Internal temp. gain compensation  
COMP_ETO  
W
R
0xD2  
ETOC[7:0]  
ETGC[7:0]  
External temp. offset  
compensation  
W
COMP_ETG  
R
W
R
0xD3  
0xD4  
0xD5  
0xD6  
0xD7  
External temp. gain compensation  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
Reserved  
W
R
W
R
W
R
W
Notes  
115. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
116. Register Offset with the “lo” address value not shown have to be accessed in 16Bit mode. 8 Bit access will not function.  
4.8.6.3  
Register descriptions  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
112/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.8.6.3.1  
Acquisition control register (ACQ_CTL)  
Table 109. Acquisition control register (ACQ_CTL)  
Offset  
Access: User read/write  
0x58  
(117),(118)  
15  
0
14  
13  
12  
11  
10  
9
0
8
0
R
W
0
0
0
0
0
AHCRM  
OPTEM  
OPENEM  
CVMIEM  
ETMENM  
ITMENM  
VMENM  
CMENM  
Reset  
0
0
6
0
5
0
4
0
3
0
2
0
1
0
0
7
R
W
0
AHCR  
0
OPTE  
0
OPENE  
0
CVMIE  
0
ETMEN  
0
ITMEN  
0
VMEN  
0
CMEN  
0
Reset  
Notes  
117. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
118. This Register is 16-Bit access only.  
Table 110. Acquisition control register (ACQ_CTL) - register field descriptions  
Field  
Description  
Ampere Hour Counter Reset - Mask  
0 - writing the AHCR Bit will have no effect  
1 - writing the AHCR Bit will be effective  
15  
AHCRM  
Optional Voltage Sense Enable - Mask  
0 - writing the OPTE Bit will have no effect  
1 - writing the OPTE Bit will be effective  
14  
OPTEM  
Enable Shunt Resistor Open Detection - Mask  
0 - writing the OPENE Bit will have no effect  
1 - writing the OPENE Bit will be effective  
13  
OPENEM  
Current / Voltage Measurement Interrupt Enable - Mask  
0 - writing the CVMIE Bit will have no effect  
1 - writing the CVMIE Bit will be effective  
12  
CVMIEM  
External Temperature Measurement Enable - Mask  
0 - writing the ETMEN Bit will have no effect  
1 - writing the ETMEN Bit will be effective  
11  
ETMENM  
Internal Temperature Measurement Enable - Mask  
0 - writing the ITMEN Bit will have no effect  
1 - writing the ITMEN Bit will be effective  
10  
ITMENM  
Voltage Measurement Enable - Mask  
0 - writing the VMEN Bit will have no effect  
1 - writing the VMEN Bit will be effective  
9
VMENM  
Current Measurement Enable - Mask  
0 - writing the CMEN Bit will have no effect  
1 - writing the CMEN Bit will be effective  
8
CMENM  
Ampere Hour Counter Reset, this write only bit will reset the ACQ_AHC register.  
0 - no effect  
1 - ACQ_AHC reset to 0x00000000  
7
AHCR  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
113/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 110. Acquisition control register (ACQ_CTL) - register field descriptions (continued)  
Field  
Description  
Optional Voltage Sense Enable (Voltage Channel Multiplexer Control)  
0 - VSENSE routed to ADC  
1 - VOPT routed to ADC  
6
OPTE  
Enable Shunt Resistor Open Detection  
0 - Shunt resistor open detection disabled, the OPEN bit must be ignored  
1 - Shunt resistor open detection enabled, OPEN bit will indicate status  
5
OPENE  
Current / Voltage Measurement Interrupt Enable  
0 - current and voltage measurement interrupt disabled  
1 - current and voltage measurement interrupt enabled  
4
CVMIE  
External Temperature Measurement Enable  
0 - external temperature measurement disabled  
1 - external temperature measurement enabled  
3
ETMEN  
Internal Temperature Measurement Enable  
0 - internal temperature measurement disabled  
1 - internal temperature measurement enabled  
2
ITMEN  
Voltage Measurement Enable  
0 - voltage measurement disabled  
1 - voltage measurement enabled  
1
VMEN  
Current Measurement Enable  
0 - current measurement disabled  
1 - current measurement enabled  
0
CMEN  
4.8.6.3.2  
Acquisition status register (ACQ_SR (hi))  
Table 111. Acquisition status register (ACQ_SR (hi))  
(119)  
Offset  
Access: User read/write  
0x5A  
7
6
5
4
3
2
1
0
R
AVRF  
PGAG  
VMOW  
CMOW  
ETM  
ITM  
VM  
CM  
W
Write 1 will clear the flags  
Reset  
0
0
0
0
0
0
0
0
Notes  
119. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 112. Acquisition status register (ACQ_SR (hi)) - register field descriptions  
Field  
Description  
VDDA Low Voltage Reset Flag. Writing this bit to logic 1 will clear the flag.  
0 - n.a.  
1 - Last reset was caused by a low voltage condition at the VDDA regulator.  
7
AVRF  
(120)  
PGA Gain Change Flag  
. Writing this bit to logic 1 will clear the flag.  
6
0 - PGA gain has not changed since last flag clear  
1 - PGA gain has changed since last flag clear  
PGAG  
(120)  
Voltage Measurement Result Overwritten  
. Writing this bit to logic 1 will clear the flag.  
5
(121)  
0 - Voltage measurement result register VOLT[15:0] not overwritten  
1 - Voltage measurement result register VOLT[15:0] overwritten  
since last VMOW flag clear  
since last VMOW flag clear  
VMOW  
(121)  
(120)  
Current Measurement Result Overwritten  
. Writing this bit to logic 1 will clear the flag.  
4
(121)  
0 - Current measurement result register CURR[15:0] not overwritten  
1 - Current measurement result register CURR[15:0] overwritten  
since last CMOW flag clear  
since last CMOW flag clear  
CMOW  
(121)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
114/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 112. Acquisition status register (ACQ_SR (hi)) - register field descriptions (continued)  
Field  
Description  
(120)  
End of Measurement - External Temperature  
. Writing this bit to logic 1 will clear the flag.  
3
ETM  
0 - No external temperature measurement completed since last ETM clear  
1 - External temperature measurement completed since last ETM clear  
(120)  
End of Measurement - Internal Temperature  
. Writing this bit to logic 1 will clear the flag.  
2
ITM  
0 - No internal temperature measurement completed since last ITM clear  
1 - Internal temperature measurement completed since last ITM clear  
End of Measurement - Voltage. Writing this bit to logic 1 will clear the flag.  
0 - No voltage measurement completed since last VM clear  
1 - Voltage measurement completed since last VM clear  
1
VM  
End of Measurement - Current. Writing this bit to logic 1 will clear the flag.  
0 - No current measurement completed since last CM clear  
1 - Current measurement completed since last CM clear  
0
CM  
Notes  
120. No Interrupts issued for those flags  
121. Overwritten - new result latched before previous result was read  
4.8.6.3.3  
Acquisition status register (ACQ_SR (lo))  
Table 113. Acquisition status register (ACQ_SR (lo))  
(122)  
Offset  
Access: User read  
0x5B  
7
6
0
5
0
4
3
2
1
0
R
OPEN  
VTH  
ETCHOP  
ITCHOP  
VCHOP  
CCHOP  
W
Notes  
122. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 114. Acquisition status register (ACQ_SR (lo)) - register field descriptions  
Field  
Description  
Shunt Resistor Open Detection Status (Normal mode only, only functional if OPENE=1)  
0 - Shunt resistor detected  
1 - Shunt resistor disconnected  
7
OPEN  
Digital Voltage High Threshold Reached  
0 - Voltage measurement result for VSENSE / VOPT below V (0xDAC0: equivalent to 28 V at 0.5 mV LSB weighing)  
1 - Voltage measurement result for VSENSE / VOPT above or equal V (0xDAC0: equivalent to 28 V at 0.5 mV LSB weighing)  
4
VTH  
TH  
TH  
Chopping Active Status - External Temperature  
0 - Chopper for external temperature measurement disabled  
1 - Chopper for external temperature measurement enabled  
3
ETCHOP  
Chopping Active Status - Internal Temperature  
0 - Chopper for internal temperature measurement disabled  
1 - Chopper for internal temperature measurement enabled  
2
ITCHOP  
Chopping Active Status - Voltage  
0 - Chopper for voltage measurement disabled  
1 - Chopper for voltage measurement enabled  
1
VCHOP  
Chopping Active Status - Current  
0 - Chopper for current measurement disabled  
1 - Chopper for current measurement enabled  
0
CCHOP  
4.8.6.3.4  
Acquisition chain control 1 (ACQ_ACC1)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
115/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 115. Acquisition chain control 1 (ACQ_ACC1)  
Offset  
Access: User read/write  
0x5C  
(123)(124)  
15  
0
14  
13  
12  
11  
10  
9
8
R
W
0
0
0
0
0
0
0
TCOMPM  
VCOMPM  
CCOMPM  
LPFENM  
ETCHOPM  
ITCHOPM  
CVCHOPM  
AGENM  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
TCOMP  
1
VCOMP  
1
CCOMP  
1
LPFEN  
0
ETCHOP  
0
ITCHOP  
0
CVCHOP  
0
AGEN  
1
Reset  
Notes  
123. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
124. This Register is 16 Bit access only.  
Table 116. Acquisition chain control 1 (ACQ_ACC1) - register field descriptions  
Field  
Description  
Temperature Measurement Channel - Compensation Enable - Mask  
0 - writing the TCOMP bit will have no effect  
1 - writing the TCOMP bit will be effective  
15  
TCOMPM  
Voltage Measurement Channel - Compensation Enable - Mask  
0 - writing the VCOMP bit will have no effect  
1 - writing the VCOMP bit will be effective  
14  
VCOMPM  
Current Measurement Channel - Compensation Enable - Mask  
0 - writing the CCOMP bit will have no effect  
1 - writing the CCOMP bit will be effective  
13  
CCOMPM  
LPF Enable - Mask  
0 - writing the LPFEN bit will have no effect  
1 - writing the LPFEN bit will be effective  
12  
LPFENM  
Chopping Enable - External Temperature Measurement Channel - Mask  
0 - writing the ETCHOP bit will have no effect  
1 - writing the ETCHOP bit will be effective  
11  
ETCHOPM  
Chopping Enable - Internal Temperature Measurement Channel - Mask  
0 - writing the ITCHOP bit will have no effect  
1 - writing the ITCHOP bit will be effective  
10  
ITCHOPM  
Chopping Enable - Voltage Measurement Channel - Mask  
0 - writing the CVCHOP bit will have no effect  
1 - writing the CVCHOP bit will be effective  
9
CVCHOPM  
Automatic Gain Control Enable - Mask  
0 - writing the AGEN bit will have no effect  
1 - writing the AGEN bit will be effective  
8
AGENM  
Temperature Measurement Channel - Compensation Enable  
0 - Temperature measurement channel offset and gain compensation disabled  
1 - Temperature measurement channel offset and gain compensation enabled  
7
TCOMP  
Voltage Compensation Enable  
0 - Voltage measurement channel offset and gain compensation disabled  
1 - Voltage measurement channel offset and gain compensation enabled  
6
VCOMP  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
116/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 116. Acquisition chain control 1 (ACQ_ACC1) - register field descriptions (continued)  
Field  
Description  
Current Compensation Enable  
0 - Current measurement channel offset and gain compensation disabled  
1 - Current measurement channel offset and gain compensation enabled  
5
CCOMP  
LPF Enable  
4
0 - Low pass filter for current and voltage channel disabled  
1 - Low pass filter for current and voltage channel enabled  
LPFEN  
Chopping Enable - External Temperature  
0 - Chopper mode for external temperature measurement disabled  
1 - Chopper mode for external temperature measurement enabled  
3
ETCHOP  
Chopping Enable - Internal Temperature  
0 - Chopper mode for internal temperature measurement disabled  
1 - Chopper mode for internal temperature measurement enabled  
2
ITCHOP  
Chopping Enable - Voltage  
0 - Chopper mode for voltage and current measurement disabled  
1 - Chopper mode for voltage and current measurement enabled  
1
CVCHOP  
Automatic Gain Control Enable  
0 - Automatic gain control disabled (manual gain control via IGAIN[2:0])  
1 - Automatic gain control enabled  
0
AGEN  
4.8.6.3.5  
Acquisition chain control 0 (ACQ_ACC0)  
Table 117. Acquisition chain control 0 (ACQ_ACC0)  
Offset  
Access: User read/write  
0x5E  
(125),(126)  
15  
0
14  
13  
12  
11  
10  
9
0
8
0
R
W
0
0
0
0
0
ZEROM  
ECAPM  
TADCGM  
VADCGM  
CADCGM  
TDENM  
VDENM  
CDENM  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
ZERO  
0
ECAP  
0
TADCG  
1
VADCG  
1
CADCG  
1
TDEN  
0
VDEN  
0
CDEN  
0
Reset  
Notes  
125. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
126. This Register is 16 Bit access only.  
Table 118. Acquisition chain control 0 (ACQ_ACC0) - register field descriptions  
Field  
Description  
Current and Voltage Sigma Delta Input Short - Mask  
0 - writing the ZERO bit will have no effect  
1 - writing the ZERO bit will be effective  
15  
ZEROM  
TSUP External Capacitor - Mask  
0 - writing the ECAP bit will have no effect  
1 - writing the ECAP bit will be effective  
14  
ECAPM  
Temperature ADC Gain Select - Mask  
0 - writing the TADCG bit will have no effect  
1 - writing the TADCG bit will be effective  
13  
TADCGM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
117/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 118. Acquisition chain control 0 (ACQ_ACC0) - register field descriptions  
Field  
Description  
Voltage ADC Gain Select - Mask  
0 - writing the VADCG bit will have no effect  
1 - writing the VADCG bit will be effective  
12  
VADCGM  
Current ADC Gain Select - Mask  
0 - writing the CADCG bit will have no effect  
1 - writing the CADCG bit will be effective  
11  
CADCGM  
100ns Clock delay - Internal Temperature - Mask  
0 - writing the TDEN bit will have no effect  
1 - writing the TDEN bit will be effective  
10  
TDENM  
100ns Clock delay - Voltage - Mask  
0 - writing the VDEN bit will have no effect  
1 - writing the VDEN bit will be effective  
9
VDENM  
100ns Clock delay - Current - Mask  
0 - writing the CDEN bit will have no effect  
1 - writing the CDEN bit will be effective  
8
CDENM  
Current and Voltage Sigma Delta Input Short (to perform Offset Compensation measurement)  
0 - Sigma delta inputs not shorted  
1 - Current and voltage sigma delta inputs shorted  
7
ZERO  
TSUP External Capacitor select  
0 - TSUP frequency compensation disabled. No capacitor at pin.  
0 - TSUP frequency compensation enabled. Capacitor C  
6
ECAP  
allowed at pin.  
TSUP  
Temperature ADC Gain Select; Test purpose only, Default value (1) must be used  
0 - Temperature ADC - gain adjustment  
1 - Temperature ADC - standard gain (default)  
5
TADCG  
Voltage ADC Gain Select; Test purpose only; Default value (1) must be used  
0 - Voltage ADC - gain adjustment  
1 - Voltage ADC - standard gain (default)  
4
VADCG  
Current ADC Gain Select; Test purpose only; Default value (1) must be used  
0 - Current ADC - gain adjustment  
1 - Current ADC - standard gain (default)  
3
CADCG  
Timing delay - Temperature  
0 - standard timing for temperature measurement channel  
1 - additional SD converter input delay (typ. 100 ns) for temperature measurement channel  
2
TDEN  
Timing delay - Voltage  
1
0 - standard timing for Voltage measurement channel  
1 - additional SD converter input delay (typ. 100 ns) for voltage measurement channel  
VDEN  
Timing delay - Current  
0
0 - standard timing for current measurement channel  
1 - additional SD converter input delay (typ. 100 ns) for current measurement channel  
CDEN  
4.8.6.3.6  
Decimation rate (ACQ_DEC)  
Table 119. Decimation rate (ACQ_DEC)  
(127)  
Offset  
Access: User read/write  
1 0  
0x60  
7
0
6
0
5
0
4
0
3
0
2
R
DEC[2:0]  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
118/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 119. Decimation rate (ACQ_DEC)  
Reset  
0
0
0
0
0
1
0
0
Notes  
127. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 120. Decimation rate (ACQ_DEC) - register field descriptions  
Field  
Description  
Decimation Rate Selection (Combined decimation rate of first and second sinc3 decimator; Fist decimator is fixed to D=8)  
000 - D = 512 (Channel Output Rate = 1.0 kHz)  
001 - D = 64 (Channel Output Rate = 8.0 kHz)  
010 - D = 128 (Channel Output Rate = 4.0 kHz)  
011 - D = 256 (Channel Output Rate = 2.0 kHz)  
100 - D = 512 (Channel Output Rate = 1.0 kHz), (default)  
101 - D = 1024 (Channel Output Rate = 500 Hz)  
2-0  
DEC[2:0]  
110 - D = 512 (Channel Output Rate = 1.0 kHz)  
111 - D = 512 (Channel Output Rate = 1.0 kHz)  
4.8.6.3.7  
BandGap control (ACQ_BGC)  
Table 121. BandGap control (ACQ_BGC)  
(128)  
Offset  
Access: User read/write  
1 0  
0x61  
7
0
6
0
5
4
1
3
BGLDO  
1
2
R
BG3EN  
BG2EN  
BG1EN  
BGADC  
W
Reset  
0
0
0
0
0
0
Notes  
128. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 122. BandGap control (ACQ_BGC) - register field descriptions  
Field  
Description  
ADC Bandgap select  
00 - n.a. (not allowed - VDDA Reset)  
5-4  
BGADC  
01 - BG1 reference selected for the AD converters (default)  
10 - BG2 reference selected for the AD converters  
11 - BG3 reference selected for the AD converters  
LDO (Low Dropout Regulator) Bandgap select  
0 - BG2 selected as voltage regulator reference  
1 - BG1 selected as voltage regulator reference (default)  
3
BGLDO  
Bandgap 3 Status  
0 - Bandgap 3 disabled  
1 - Bandgap 3 enabled  
2
BG3EN  
Bandgap 2 Status  
0 - Bandgap 2 disabled  
1 - Bandgap 2 enabled  
1
BG2EN  
Bandgap 1 Status  
0 - Bandgap 1 disabled  
1 - Bandgap 1 enabled  
0
BG1EN  
4.8.6.3.8  
PGA gain (ACQ_GAIN)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
119/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 123. PGA gain (ACQ_GAIN)  
(129)  
Offset  
Access: User read/write  
0x62  
7
0
6
0
5
0
4
0
3
0
2
0
1
IGAIN[2:0]  
0
0
R
W
Reset  
0
0
0
0
0
0
Notes  
129. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 124. PGA gain (ACQ_GAIN) - register field descriptions  
Field  
Description  
PGA Gain Register - Writing will select (manually override) the PGA gain if the automatic gain control is disabled (AGEN=0). Reading  
will return current gain setting (including the auto gain). The register content will also determine the current channel offset compensation  
buffer accessed through the COC[7:0] register.  
000 - PGA Gain = 4  
001 - PGA Gain = 8  
010 - PGA Gain = 16  
011 - PGA Gain = 32  
100 - PGA Gain = 64  
101 - PGA Gain = 128  
110 - PGA Gain = 256  
111 - PGA Gain = 512  
2-0  
IGAIN[2:0]  
4.8.6.3.9  
GCB threshold (ACQ_GCB)  
Table 125. GCB threshold (ACQ_GCB)  
(130)  
Offset  
Access: User read/write  
0
0x63  
7
6
5
4
0
3
0
2
0
1
0
R
D (hi)  
D (lo)  
W
Reset  
0
0
0
0
Notes  
130. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 126. GCB threshold (ACQ_GCB) - register field descriptions  
Field  
Description  
7-4  
D[7:4]  
Gain Control Block (GCB) - 4 Bit Gain “Up” Threshold. See Section 4.8.3.1.3, “Gain control block (GCB)".  
3-0  
D[3:0]  
Gain Control Block (GCB) - 4 Bit Gain “Down” Threshold. See Section 4.8.3.1.3, “Gain control block (GCB)".  
4.8.6.3.10  
Internal temp. measurement result (ACQ_ITEMP (hi) / ACQ_ITEMP (lo))  
Table 127. Internal temp. measurement result (ACQ_ITEMP (hi) / ACQ_ITEMP (lo))  
(131)  
Offset  
Access: User read  
0
0x64 / 0x65  
7
6
5
4
3
2
1
R
ITEMP[15:8]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
120/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 127. Internal temp. measurement result (ACQ_ITEMP (hi) / ACQ_ITEMP (lo))  
W
R
ITEMP[7:0]  
W
Notes  
131. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 128. Internal Temp. Measurement Result (ACQ_ITEMP (hi) / ACQ_ITEMP (lo)) - Register Field Descriptions  
Field  
Description  
15-0  
ITEMP[15:0]  
Internal Temperature Measurement - 16 Bit ADC Result Register (unsigned Integer)  
4.8.6.3.11  
External temp. measurement result (ACQ_ETEMP (hi) / ACQ_ETEMP (lo))  
Table 129. External temp. measurement result (ACQ_ETEMP (hi) / ACQ_ETEMP (lo))  
(132)  
Offset  
Access: User read  
0
0x66 / 0x67  
7
6
5
4
3
2
1
R
W
R
ETEMP[15:8]  
ETEMP[7:0]  
W
Notes  
132. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 130. External temp. measurement result (ACQ_ETEMP (hi) / ACQ_ETEMP (lo)) - register field descriptions  
Field  
Description  
15-0  
ETEMP[15:0]  
External Temperature Measurement - 16 Bit ADC Result Register (unsigned Integer)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
121/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.12  
Current measurement result (ACQ_CURR1 / ACQ_CURR0)  
Table 131. Current measurement result (ACQ_CURR1 / ACQ_CURR0)  
(133)  
(134)  
(135)  
Offset  
Access: User read  
0x69  
/ 0x6A  
7
6
5
4
3
2
1
0
R
CURR[23:16]  
W
R
W
R
CURR[15:8]  
CURR[7:0]  
W
Notes  
133. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
134. 0x69 for 8-Bit access. 0x68 for 16-Bit access.  
135. This Register is 16-Bit access only.  
Table 132. Current measurement result (ACQ_CURR1 / ACQ_CURR0) - register field descriptions  
Field  
Description  
CURR[23:0]  
Two's complement 24-Bit signed integer result register for the current measurement channel.  
23-16  
CURR[23:16]  
Current Measurement - High Byte Result Register, 8 or 16-Bit read operation.  
Current Measurement - Low Word Result Register, 16-Bit read operation only.  
15-0  
CURR[15:0]  
4.8.6.3.13  
Voltage measurement result (ACQ_VOLT)  
Table 133. Voltage measurement result (ACQ_VOLT)  
Offset  
Access: User read  
0
0x6C  
(136)(137)  
7
6
5
4
3
2
1
R
W
R
VOLT[15:8]  
VOLT[7:0]  
W
Notes  
136. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
137. This Register is 16-Bit access only.  
Table 134. Voltage measurement result (ACQ_VOLT) - register field descriptions  
Field  
Description  
15-0  
VOLT[15:0]  
Unsigned 16-Bit integer result register for the voltage measurement channel.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
122/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.14  
Low pass filter coefficient number (ACQ_LPFC)  
Table 135. Low pass filter coefficient number (ACQ_LPFC)  
(138)  
Offset  
Access: User read/write  
0x6E  
7
0
6
0
5
0
4
0
3
2
1
1
1
0
R
W
LPFC[3:0]  
Reset  
0
0
0
0
1
0
Notes  
138. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 136. Low pass filter coefficient number (ACQ_LPFC) - register field descriptions  
Field  
Description  
Low Pass Filter Coefficient Number. Defines the highest coefficient Number used.  
0000 - LPF used with Coefficient A0  
0001 - LPF used with Coefficient A0...A1  
....  
3-0  
LPFC[3:0]  
1111 - LPF used with Coefficient A0...A15  
4.8.6.3.15  
Low power trigger current measurement period (ACQ_TCMP)  
Table 137. Low power trigger current measurement period (ACQ_TCMP)  
Offset  
Access: User read / write  
0x70  
(139)(140)  
7
0
0
6
0
0
5
0
0
4
0
0
3
0
0
2
0
0
1
0
0
0
R
W
TCMP[15:8]  
TCMP[7:0]  
Reset  
R
0
0
W
Reset  
Notes  
139. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
140. This Register is 16-Bit access only.  
Table 138. Low power trigger current measurement period (ACQ_TCMP) - register field descriptions  
Field  
Description  
15-0  
TCMP[15:0]  
Low power trigger current measurement period (Trigger counter based on ALFCLK). See Section 4.3.4.1.1, “Cyclic current  
acquisition/calibration temperature check".  
NOTE  
The cyclic acquisition period must be greater than the acquisition time. See Section 4.8.3.5.2,  
“Latency and throughput"” for estimation. A continuous acquisition is still possible by using TCMP=0.  
The Low Power Trigger Current counter is an up counting counter starting at 0. It is increment according to the Low Power Clock. In Low  
Power mode, when Low Power Trigger Current counter is equal to the Low Power Trigger Currrent Measurement Period, the device will  
start a current and temperature acquisition according to the setting of the current and internal temperature acquisition channels.  
4.8.6.3.16  
Low power current threshold filtering period (ACQ_THF)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
123/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 139. Low power current threshold filtering period (ACQ_THF)  
(141)  
Offset  
Access: User read / write  
0x72  
7
6
5
4
3
0
2
0
1
0
R
W
THF[7:0]  
Reset  
0
0
0
0
0
0
Notes  
141. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 140. Low power current threshold filtering period (ACQ_THF) - register field descriptions  
Field  
Description  
7-0  
THF[7:0]  
Low power current threshold wake up filtering period. See Section 4.3.4.1.1, “Cyclic current acquisition/calibration temperature check".  
4.8.6.3.17  
I and V chopper control register (ACQ_CVCR (hi))  
Table 141. I and V chopper control register (ACQ_CVCR (hi))  
(142)  
Offset  
Access: User write  
0x74  
7
0
6
0
5
0
4
0
3
0
2
1
0
0
R
W
0
IIRCM  
0
0
PGAFM  
0
DBTM  
Reset  
0
0
0
0
0
0
Notes  
142. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 142. I and V chopper control register (ACQ_CVCR (hi)) - register field descriptions  
Field  
Description  
Hold Time After Chopper Swap - Mask  
0 - writing the DBT bits will have no effect  
1 - writing the DBT bits will be effective  
5-4  
DBTM[1:0]  
IIR Low Pass Filter Configuration - Mask  
0 - writing the IIRC bits will have no effect  
1 - writing the IIRC bits will be effective  
3-1  
IIRCM[2:0]  
PGA fast mode enable - Mask  
0 - writing the PGAF bit will have no effect  
1 - writing the PGAF bit will be effective  
0
PGAFM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
124/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.18  
I and V chopper control register (ACQ_CVCR (lo))  
Table 143. I and V chopper control register (ACQ_CVCR (lo))  
(143)  
Offset  
Access: User write  
0x75  
7
0
6
0
5
4
3
2
IIRC  
1
1
1
0
PGAF  
1
R
DBT  
W
Reset  
0
0
0
0
1
Notes  
143. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 144. I and V chopper control register (ACQ_CVCR (lo)) - register field descriptions  
Field  
Description  
Hold Time After Chopper Swap  
00 - Hold after swap disabled  
5-4  
DBT[1:0]  
01 - 3 x 64 kHz cycles hold time for the SINC3-L8  
10 - 4 x 64 kHz cycles hold time for the SINC3-L8  
11 - 5 x 64 kHz cycles hold time for the SINC3-L8  
IIR Low Pass Filter Coefficient (  
000 - 1/8  
001 - 1/16  
010 - 1/32  
011 - 1/64  
100 - 1/128  
3-1  
IIRC[2:0]  
101 - IIR disabled  
110 - IIR disabled  
111 - IIR disabled  
PGA fast mode enable  
0 - PGA capacitor swap disabled (slow mode).  
1 - PGA capacitors swapped during chopper  
0
PGAF  
NOTE  
During Low Power mode: 0x15; (00010101b) is recommend for ACQ_CVCR (DBT =01, IIRC = 010,  
PGAF = 1)  
4.8.6.3.19  
Low power current threshold (ACQ_CTH)  
Table 145. Low power current threshold (ACQ_CTH  
(144)  
Offset  
Access: User read / write  
0x76  
7
6
5
4
3
0
2
0
1
0
R
CTH[7:0]  
W
Reset  
0
0
0
0
0
0
Notes  
144. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
125/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 146. Low power current threshold (ACQ_CTH - register field descriptions  
Field  
Description  
7-0  
Low power current threshold  
CTH[7:0]  
See Section 4.3.4.1.1.1, “Current threshold wake-up" for details.  
4.8.6.3.20  
Low power Ah counter threshold (ACQ_AHTH1 (hi) / ACQ_AHTH1 (lo) /  
ACQ_AHTH0 (hi) / ACQ_AHTH0 (lo))  
Table 147. Low power Ah counter threshold (ACQ_AHTH1 (hi) / ACQ_AHTH1 (lo) / ACQ_AHTH0 (hi) / ACQ_AHTH0 (lo))  
(145)  
Offset  
Access: User read / write  
1 0  
0x78 / 0x79 / 0x7A / 0x7B  
7
0
6
5
4
3
2
R
W
R
W
R
AHTH[30:0]  
W
R
W
Reset  
0
0
0
0
0
0
0
0
Notes  
145. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 148. Low power Ah counter threshold (ACQ_AHTH1 (hi) / ACQ_AHTH1 (lo) / ACQ_AHTH0 (hi) / ACQ_AHTH0 (lo)) - register  
field descriptions  
Field  
Description  
30-0  
AHTH[30:0]  
Low power Ah counter threshold. Absolute (unsigned) 31-Bit integer. Reading one 16-Bit part of the register will buffer the second.  
Reading the second will unlock the buffer. See Section 4.3.4.1.1.2, “Current ampere hour threshold wake-up". for details on the Register.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
126/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.21  
Low power Ah counter (ACQ_AHC1 (hi) / ACQ_AHC1 (lo) / ACQ_AHC0 (hi) /  
ACQ_AHC0 (lo))  
Table 149. Low power Ah counter (ACQ_AHC1 (hi) / ACQ_AHC1 (lo) / ACQ_AHC0 (hi) / ACQ_AHC0 (lo))  
(146)  
Offset  
Access: User read  
0
0x7C / 0x7D / 0x7E / 0x7F  
7
6
5
4
3
2
1
R
W
R
AHC[31:0]  
AHC[23:16]  
AHC[15:8]  
AHC[7:0]  
W
R
W
R
W
Notes  
146. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 150. Low power Ah counter (ACQ_AHC1 (hi) / ACQ_AHC1 (lo) / ACQ_AHC0 (hi) / ACQ_AHC0 (lo)) - register field  
descriptions  
Field  
Description  
31-0  
AHC[31:0]  
Low power Ah counter (32-Bit signed integer, two’s complement). Reading one 16-Bit part of the register will buffer the second. Reading  
the second will unlock the buffer. See Section 4.3.4.1.1.2, “Current ampere hour threshold wake-up".  
4.8.6.3.22  
Low pass filter coefficient Ax (LPF_Ax (hi))  
Table 151. Low pass filter coefficient Ax (LPF_Ax (hi))  
(147)  
Offset  
Access: User read/write  
1 0  
0x80...0x9E  
7
6
5
4
3
2
R
W
Ax[15:8]  
Reset  
see Table 154  
Notes  
147. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.8.6.3.23  
Low pass filter coefficient Ax (LPF_Ax (lo))  
Table 152. Low pass filter coefficient Ax (LPF_Ax (lo))  
(148)  
Offset  
Access: User read/write  
0x81...0x9F  
7
6
5
4
3
2
1
0
R
Ax[7:0]  
W
Reset  
see Table 154  
Notes  
148. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
127/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 153. Low pass filter coefficient Ax - register field descriptions  
Field  
Description  
15-0  
Ax[15:0]  
Low Pass Filter Coefficient Value. x = 0...15. Data Format: MSB = Sign (“1” minus). [14:0] integer.  
Table 154. Low pass filter coefficient Ax - reset values  
Field  
A0  
Reset Value  
0x00F5  
0x0312  
0x051F  
0x0852  
0x0B44  
0x0E35  
0x1021  
0x10E5  
Field  
A8  
Reset Value  
0x1021  
0x0E35  
0x0B44  
0x0852  
0x051F  
0x0312  
0x00F5  
0x0000  
A1  
A9  
A2  
A10  
A11  
A12  
A13  
A14  
A15  
A3  
A4  
A5  
A6  
A7  
4.8.6.3.24  
Compensation control register (COMP_CTL)  
Table 155. Compensation control register (COMP_CTL)  
Offset  
Access: User read/write  
0xA0  
(149)(150)  
15  
0
14  
0
13  
12  
11  
10  
9
0
8
R
W
0
0
0
0
0
BGCALM  
BGCAL  
PGAZM  
PGAOM  
DIAGVM  
DIAGIM  
CALIEM  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
PGAZ  
0
PGAO  
0
DIAGV  
0
DIAGI  
0
CALIE  
0
Reset  
1
0
0
Notes  
149. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
150. This Register is 16-Bit access only.  
Table 156. Compensation control register (COMP_CTL) - register field descriptions  
Field  
Description  
Calibration Band Gap Select - Mask  
0 - writing the corresponding BGCAL bits will have no effect  
1 - writing the corresponding BGCAL bits will be effective  
15-14  
BGCALM  
PGA Input Zero - Mask  
0 - writing the PGAZ bit will have no effect  
1 - writing the PGAZ bit will be effective  
13  
PGAZM  
PGA Offset Calibration - Mask  
0 - writing the PGAO bit will have no effect  
1 - writing the PGAO bit will be effective  
12  
PGAOM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
128/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 156. Compensation control register (COMP_CTL) - register field descriptions (continued)  
Field  
Description  
Diagnostic Mode Voltage Channel - Mask  
0 - writing the DIAGV bit will have no effect  
1 - writing the DIAGV bit will be effective  
11  
DIAGVM  
Diagnostic Mode Current Channel - Mask  
0 - writing the DIAGI bit will have no effect  
1 - writing the DIAGI bit will be effective  
10  
DIAGIM  
Calibration IRQ Enable - Mask  
0 - writing the CALIE bit will have no effect  
1 - writing the CALIE bit will be effective  
8
CALIEM  
Calibration Band Gap Select  
00 - Bandgap disconnected from calibration  
01 - BG1 selected as calibration reference  
10 - BG2 selected as calibration reference (default)  
11 - BG3 selected as calibration reference  
7-6  
BGCAL  
PGA Input Zero  
0 - Programmable gain amplifier inputs in normal operation  
1 - Programmable gain amplifier inputs shorted for Calibration  
5
PGAZ  
PGA Offset Calibration Start  
0 - PGA normal operation  
4
1 - PGA internal offset calibration start (PGAOF will indicate calibration complete). PGAZ has to be set to 1 during calibration. The bit  
will remain set after the calibration is complete. It has to be cleared by writing 0 before it can be set to start the next calibration. The  
current measurement channel has to be enabled (ACQ_CTL[CMEN]=1) in order to perform the PGA offset compensation.  
PGAO  
Diagnostic Mode Voltage Channel  
0 - Calibration reference disconnected from the voltage channel input  
1 - Calibration reference connected to the voltage channel input for calibration. Manual conversion needed to measure reference  
3
DIAGV  
Diagnostic Mode Current Channel  
0 - Calibration reference disconnected from the current channel input  
1 - Calibration reference connected to the current channel input for calibration. Manual conversion needed to measure reference  
2
DIAGI  
Calibration IRQ Enable  
0 - Calibration request interrupt disabled  
1 - Calibration request interrupt enabled. A temperature “out of calibration range” will cause a calibration interrupt request  
0
CALIE  
4.8.6.3.25  
Compensation status register (COMP_SR)  
Table 157. Compensation status register (COMP_SR)  
(151)  
Offset  
Access: User read/write  
0xA2  
7
0
6
5
0
4
3
0
2
0
1
0
0
R
BGRF  
PGAOF  
CALF  
W
Write 1 will clear the flags and will start next calibration steps  
Reset  
0
0
0
0
0
0
0
0
Notes  
151. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
129/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 158. Compensation status register (COMP_SR) - register field descriptions  
Field  
Description  
Band Gap Reference Status Flag  
0 - Indicates the reference bandgap has not been set / applied  
1 - Reference bandgap has been set. Writing 1 will clear the flag  
6
BGRF  
PGA Internal Offset Compensation Complete Flag  
0 - PGA offset compensation ongoing or not started since last flag clear  
1 - PGA offset compensation finished since last flag clear. Writing 1 will clear the flag  
4
PGAOF  
Calibration Request Status Flag  
0 - No Temperature out of range condition detected  
1 - Temperature out of range condition detected. Writing 1 will clear the flag  
0
CALF  
4.8.6.3.26  
Temperature filtering period (COMP_TF)  
Table 159. Temperature filtering period (COMP_TF)  
(152)  
Offset  
Access: User read / write  
0xA3  
7
0
6
0
5
0
4
0
3
0
2
0
1
TMF[2:0]  
0
0
R
W
Reset  
0
0
0
0
0
0
Notes  
152. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 160. Temperature filtering period (COMP_TF) - register field descriptions  
Field  
Description  
2-0  
TMF[2:0]  
Recalibration Temperature Filtering period. Defines the number of measurements above / below the Max / Min thresholds that are  
required before a calibration request is detected.  
4.8.6.3.27  
Max. temp. before recalibration (COMP_TMAX)  
Table 161. Max. temp. before recalibration (COMP_TMAX)  
Offset  
Access: User read/write  
8
0xA4  
(153)(154)  
15  
14  
13  
12  
11  
10  
9
R
W
TCMAX[15:8]  
TCMAX[7:0]  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
Notes  
153. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
154. This Register is 16 Bit access only.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
130/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 162. Max. temp. before recalibration (COMP_TMAX) - register field descriptions  
Field  
Description  
15-0  
TCMAX[15:0]  
Maximum Temperature before recalibration. Once the internal temperature measurement result is above or equal to TCMAX, the TMF  
filter counter is increased, if below, the counter is decreased.  
4.8.6.3.28  
Min.temp. before recalibration (COMP_TMIN)  
Table 163. Min. temp. before recalibration (COMP_TMIN)  
Offset  
Access: User read/write  
8
0xA6  
(155)(156)  
15  
14  
13  
12  
11  
10  
9
R
W
TCMIN[15:8]  
TCMIN[7:0]  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
Notes  
155. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
156. This Register is 16-Bit access only.  
Table 164. Min. Temp. before recalibration (COMP_TMIN) - register field descriptions  
Field  
Description  
15-0  
TCMIN[15:0]  
Minimum Temperature before recalibration. Once the internal temperature measurement result is below TCMIN, the TMF filter counter  
is increased, if above or equal, the counter is decreased.  
4.8.6.3.29  
Offset voltage compensation (COMP_VO)  
Table 165. Offset voltage compensation (COMP_VO)  
(157)  
Offset  
Access: User read/write  
0
0xAA  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
R
VOC[7:0]  
W
Reset  
0
Notes  
157. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 166. Offset voltage compensation (COMP_VO) - register field descriptions  
Field  
Description  
7-0  
VOC[7:0]  
Voltage Offset Compensation Buffer. This register contains the voltage channel offset compensation as an 8-bit signed char (two  
complement). 0x7F = max, 0x80 =min.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
131/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.30  
Offset current compensation window (COMP_IO)  
Table 167. Offset current compensation window (COMP_IO)  
(158)  
Offset  
Access: User read/write  
0xAB  
7
6
5
4
3
2
0
1
0
0
R
COC[7:0]  
W
Reset  
0
0
0
0
0
0
Notes  
158. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 168. Offset current compensation window (COMP_IO) - register field descriptions  
Field  
Description  
Current Offset Compensation Buffer window for the 8 current compensation values stored. The content of the IGAIN[2:0] register will  
determine the compensation buffer accessed through the COC[7:0] register. This register contains the current channel offset  
compensation as 8-bit signed char (two complement). 0x7F = max, 0x80 =min.  
7-0  
COC[7:0]  
4.8.6.3.31  
Gain voltage comp. V  
channel (COMP_VSG)  
SENSE  
Table 169. Gain voltage comp. VSENSE channel (COMP_VSG)  
Offset  
Access: User read/write  
0xAC  
(159)(160)  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
0
9
8
R
W
VSGC[9:8]  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
VSGC[7:0]  
Reset  
0
0
0
0
0
0
0
0
Notes  
159. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
160. This Register is 16 Bit access only.  
Table 170. Gain voltage comp. VSENSE channel (COMP_VSG) - register field descriptions  
Field  
Description  
9-0  
VSGC[9:0]  
Voltage Channel Gain Compensation Buffer. This register contains the voltage channel gain compensation as 10-bit special coded  
value. Refer to Section 4.8.3.4, “Compensation" for details.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
132/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.32  
8 x gain current compensation 4...512 (COMP_IG4... COMP_IG512)  
Table 171. 8 x Gain current compensation 4...512 (COMP_IG4... COMP_IG512)  
Offset  
Access: User read/write  
0xB0... 0xBE  
(161)(162)  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
0
9
8
R
W
IGC4...512 (hi) [9:8]  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
1
1
0
0
R
W
IGC4...512 (lo) [7:0]  
Reset  
0
0
0
0
0
0
0
0
Notes  
161. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
162. This Register is 16 Bit access only.  
Table 172. 8 x gain current compensation 4...512 (COMP_IG4COMP_IG512) - register field descriptions  
Field  
Description  
9-0  
IGC4[9:0]  
IGC8[9:0]  
IGC16[9:0]  
IGC32[9:0]  
IGC64[9:0]  
IGC128[9:0]  
IGC256[9:0]  
IGC512[9:0]  
Individual Current Gain Compensation Buffers for the 8 Gain configurations. Those registers contain the current channel gain  
compensation as 10-bit special coded value. Refer to Section 4.8.3.4, “Compensation" for details.  
4.8.6.3.33  
8 x offset PGA compensation (COMP_PGAO4COMP_PGAO512)  
Table 173. 8 x offset PGA compensation (COMP_PGAO4... COMP_PGAO512)  
Offset  
Access: User read/write  
9 8  
0xC0... 0xCE  
(163)(164)  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
R
W
PGAOC4...512 (hi) [10:8]  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
PGAOC4...512 (lo) [7:0]  
Reset  
0
0
0
0
0
0
0
0
Notes  
163. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
164. This Register is 16 Bit access only.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
133/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 174. 8 x offset PGA compensation (COMP_PGAO4...COMP_PGAO512) - register field descriptions  
Field  
Description  
10-0  
PGAOC4[10:0]  
PGAOC8[10:0]  
PGAOC16[10:0]  
PGAOC32[10:0]  
PGAOC64[10:0]  
PGAOC128[10:0]  
PGAOC256[10:0]  
PGAOC512[10:0]  
Individual PGA Offset Compensation Buffers for the 8 Gain configurations. Those registers contain the PGA Offset compensation  
as 11-bit special coded value. Refer to Section 4.8.3.4, “Compensation" for details.  
4.8.6.3.34  
Internal temp. offset compensation (COMP_ITO)  
Table 175. Internal temp. offset compensation (COMP_ITO)  
(165)  
Offset  
Access: User read/write  
0
0xD0  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
R
ITOC[7:0]  
W
Reset  
0
Notes  
165. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 176. Internal temp. offset compensation (COMP_ITO) - register field descriptions  
Field  
Description  
7-0  
ITOC[7:0]  
Internal Temperature Offset Compensation Buffer. This register contains the Internal Temperature Offset compensation as 8-bit signed  
char (two complement). Refer to Section 4.8.3.4, “Compensation" for details.  
4.8.6.3.35  
Internal temp. gain compensation (COMP_ITG)  
Table 177. Internal temp. gain compensation (COMP_ITG)  
(166)  
Offset  
Access: User read/write  
0
0xD1  
7
1
6
0
5
0
4
0
3
0
2
0
1
0
R
ITGC[7:0]  
W
Reset  
0
Notes  
166. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 178. Internal temp. gain compensation (COMP_ITG) - register field descriptions  
Field  
Description  
7-0  
ITGC[7:0]  
Internal Temperature Gain Compensation Buffer. This register contains the Internal Temperature Gain compensation as 8-bit  
special coded value. Refer to Section 4.8.3.4, “Compensation" for details.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
134/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.8.6.3.36  
External temp. offset compensation (COMP_ETO)  
Table 179. External temp. offset compensation (COMP_ETO)  
(167)  
Offset  
Access: User read/write  
0xD2  
7
6
5
4
3
2
0
1
0
0
R
ETOC[7:0]  
W
Reset  
0
0
0
0
0
0
Notes  
167. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 180. External temp. offset compensation (COMP_ETO) - register field descriptions  
Field  
Description  
7-0  
ETOC[7:0]  
External Temperature Offset Compensation Buffer. This register contains the External Temperature Offset compensation as 8-bit signed  
char (two complement). Refer to Section 4.8.3.4, “Compensation" for details.  
4.8.6.3.37  
External temp. gain compensation (COMP_ETG)  
Table 181. External temp. gain compensation (COMP_ETG)  
(168)  
Offset  
Access: User read/write  
0
0xD3  
7
6
5
4
3
2
0
1
0
R
W
ETGC[7:0]  
Reset  
1
0
0
0
0
0
Notes  
168. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 182. External temp. gain compensation (COMP_ETG) - register field descriptions  
Field  
Description  
7-0  
ETGC[7:0]  
External Temperature Gain Compensation Buffer. This register contains the External Temperature Gain compensation as 8-bit special  
coded value. Refer to Section 4.8.3.4, “Compensation" for details.  
4.9  
Window watchdog  
The MM912_637 analog die includes a configurable window watchdog which is active in Normal mode. The watchdog module is based  
on the Low Power Oscillator (LPCLK) to operate independently from the MCU based D2DCLK clock. The watchdog timeout (t  
be configured between 4.0 ms and 2048 ms using the watchdog control register (WD_CTL).  
) can  
WDTO  
NOTE  
As the watchdog timing is based on the LPCLK, its accuracy is based on the trimming applied to the  
TRIM_OSC register. The given timeout values are typical values only.  
During Low Power mode, the watchdog feature is not active, a D2D read during Stop mode will have the WDOFF bit set. After wake-up  
and transition to Normal mode, the watchdog is reset to the same state as when following a Power-On-Reset (POR).  
To clear the watchdog counter, a alternating write has to be performed to the watchdog rearm register (WD_RR). The first write after the  
wake-up or RESET_A has been released has to be 0xAA, the next one has to be 0x55.  
After the wake-up or RESET_A has been released, there will be a standard (non window) watchdog active with a fixed timeout of t  
IWDTO  
(t  
= b100 = 256 ms). The Watchdog Window Open (WDWO) bit is set during that time.  
WDTO  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
135/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
WD Register  
WRITE = 0xAA  
(to be continued)  
Window WD timing (tWDTO  
)
tWDTO / 2 tWDTO / 2  
WD Register  
WRITE = 0x55  
Window Watch Dog  
Window Closed  
Window Watch Dog  
Window Open  
Initial WD Reg.  
WRITE = 0xAA  
Window Watch Dog  
Window Closed  
Window Watch Dog  
Window Open  
Standard Initial Watch Dog (no window)  
t
tIWDTO  
Figure 39. MM912_637 Analog die watchdog operation  
To change from the standard initial watchdog to the window watchdog, the initial counter reset has to be performed by writing 0xAA to the  
Watchdog rearm register (WD_RR) before t is reached.  
IWDTO  
NOTE  
An immediate trimming of the low power oscillator after reset release assures t  
being at the  
IWDTO  
maximum accuracy. See chapter 5.2.2.5, “Low power oscillator trimming (TRIM_OSC)".  
If the t  
timeout is reached with no counter reset or a value different from 0xAA written to the WD_RR, a watchdog reset will occur.  
IWDTO  
Once entering window watchdog mode, the first half of the time, t  
is forbidden for a counter reset. To reset the watchdog counter, an  
WDTO  
alternating write of 0x55 and 0xAA has to be performed within the second half of the t  
. A Window Open (WDWO) flag will indicate  
WDTO  
the current status of the window. A timeout or wrong value written to the WD_RR will force a watchdog reset.  
If the first write to the WD_CTL register is 000 (WD OFF), the WD will be disabled(169). If a different cycle time is written or the WD is  
refreshed with the default Window (100) unchanged, no further “000” write will be effective (a change of cycle time would still be possible).  
Notes  
169. The Watchdog can be enabled any time later.  
4.9.1  
Memory map and registers  
Overview  
4.9.1.1  
This section provides a detailed description of the memory map and registers.  
4.9.1.2  
Module memory map  
The memory map for the Watchdog module is given in Table 63  
Table 183. Module memory map  
Offset  
Name  
7
6
5
4
3
2
1
0
(170),(171)  
R
W
R
0
0
0
0
0
0
0
0
Reserved  
WDTOM[2:0]  
WD_CTL  
Watchdog control register  
0x10  
0
0
0
0
0
0
0
0
Reserved  
0
WDTO[2:0]  
WDOFF  
W
R
WD_SR  
0
WDWO  
0x12  
Watchdog status register  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
136/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 183. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(170),(171)  
R
W
R
0
0
0
0
0
0
0
0
0x13  
0x14  
0x15  
0x16  
0x17  
Reserved  
WD_RR  
WDR[7:0]  
Watchdog rearm register  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
W
R
W
R
W
Notes  
170. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
171. Register Offset with the “lo” address value not shown have to be accessed in 16-Bit mode. 8-Bit access will not function.  
4.9.1.3  
Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bits and field function follow the register diagrams, in bit order.  
4.9.1.3.1  
Watchdog control register (WD_CTL)  
Table 184. Watchdog control register (WD_CTL)  
Offset  
Access: User write  
0x10  
(172),(173)  
15  
0
14  
0
13  
0
12  
0
11  
0
10  
0
9
8
0
R
W
0
Reserved  
WDTOM  
Reset  
0
7
0
6
0
0
5
0
0
4
0
0
3
0
0
2
0
1
0
0
R
W
Reserved  
1
WDTO  
0
Reset  
0
0
0
0
1
0
Notes  
172. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
173. This Register is 16 Bit access only.  
Table 185. Watchdog control register (WD_CTL) - register field descriptions  
Field  
Description  
15  
Reserved  
This reserved bit is used for test purpose. Software has to write a 0 into this bit.  
Watchdog Timeout - Mask  
any setting other than 111 - writing the WDTO bits will have no effect  
111 - writing the WDTO bits will be effective  
10-8  
WDTOM[2:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
137/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 185. Watchdog control register (WD_CTL) - register field descriptions (continued)  
Field  
Description  
7
This reserved bit is used for test purpose. Software has to write a 0 into this bit.  
Reserved  
Watchdog Timeout Configuration - configuring the watchdog timeout duration t  
.
WDTO  
000 - Watchdog OFF  
001 - 4.0 ms  
010 - 16.0 ms  
011 - 64.0 ms  
100 - 256 ms (default)  
101 - 512 ms  
2-0  
WDTO[2:0]  
110 - 1024 ms  
111 - 2048 ms  
4.9.1.3.2  
Watchdog status register (WD_SR)  
Table 186. Watchdog status register (WD_SR)  
(174)  
Offset  
Access: User read  
0x12  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
R
WDOFF  
WDWO  
W
Notes  
174. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 187. Watchdog status register (WD_SR) - register field descriptions  
Field  
Description  
Watchdog Status - Indicating the watchdog module being enabled/disabled  
1 - Watchdog Off  
0 - Watchdog Active  
1
WDOFF  
Watchdog Window Status  
0
1 - Open - Indicating the watchdog window is currently open for counter reset.  
WDWO  
0 - Closed - Indicating the watchdog window is currently closed for counter reset. Resetting the watchdog with the window closed will  
cause a watchdog - reset.  
4.9.1.3.3  
Watchdog rearm register (WD_RR)  
Table 188. Watchdog rearm register (WD_RR)  
(175)  
Offset  
Access: User read/write  
0
0x14  
7
6
5
4
3
0
2
0
1
0
R
WDR  
W
Reset  
0
0
0
0
0
Notes  
175. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 189. Watchdog rearm register (WD_RR) - register field descriptions  
Field  
Description  
7-0  
WDR[7:0]  
Watchdog rearm register- Writing this register with the correct value (0xAA alternating 0x55) while the window is open will reset the  
watchdog counter. Writing the register while the watchdog is disabled will have no effect.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
138/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.10 Basic timer module - TIM (TIM16B4C)  
4.10.1 Introduction  
4.10.1.1 Overview  
The basic timer consists of a 16-bit, software-programmable counter driven by a seven stage programmable prescaler. This timer can be  
used for many purposes, including input waveform measurements while simultaneously generating an output waveform. Pulse widths can  
vary from microseconds to many seconds.  
This timer contains four complete input capture/output compare channels [IOC 3:0]. The input capture function is used to detect a selected  
transition edge and record the time. The output compare function is used for generating output signals or for timer software delays.  
Full access for the counter registers or the input capture/output compare registers should take place in a16-bit word access. Accessing  
high bytes and low bytes separately for all of these registers may not yield the same result as accessing them in one word.  
4.10.1.2 Features  
The TIM16B4C includes these distinctive features:  
Four input capture/output compare channels.  
Clock prescaler  
16-bit counter  
Timer counter reset on Output Compare 3  
4.10.1.3 Modes of operation  
The TIM16B4C is driven by the D2DCLK / 4 during Normal mode and the ALFCLK during Low Power mode.  
4.10.1.4 Block diagram  
Channel 0  
Input capture  
Output compare  
Prescaler  
D2DCLK / 4 or  
ALFCLK  
IOC0  
IOC1  
Timer overflow  
interrupt  
Channel 1  
Input capture  
Output compare  
16-bit Counter  
Channel 2  
Input capture  
Output compare  
Timer channel 0  
interrupt  
IOC2  
IOC3  
Channel 3  
Input capture  
Output compare  
Registers  
Timer channel 3  
interrupt  
Figure 40. Timer block diagram  
For more information on the respective functional descriptions see Section 4.10.4, “Functional description" of this chapter.  
4.10.2 Signal description  
4.10.2.1 Overview  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
139/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The TIM16B4C module can be used as regular time base, or can be internally routed to the PTB and LIN module. Refer to the  
corresponding sections for further details, see Section 4.12, “LIN" and Section 4.11, “General purpose I/O - GPIO". In addition, the  
TIM16B4C module is used during Low Power mode to determine the cyclic wake-up and current measurement timing (Section 4.3,  
“Analog die - power, clock and resets - PCR")  
4.10.2.2 Detailed signal descriptions  
4.10.2.2.1  
IOC3 – input capture and output compare channel 3  
This pin serves as the input capture or output compare for channel 3.  
4.10.2.2.2  
IOC2 – input capture and output compare channel 2  
This pin serves as the input capture or output compare for channel 2.  
4.10.2.2.3  
IOC1 – input capture and output compare channel 1  
This pin serves as the input capture or output compare for channel 1.  
4.10.2.2.4  
IOC0 – input capture and output compare channel 0  
This pin serves as the input capture or output compare for channel 0.  
4.10.3 Memory map and registers  
4.10.3.1 Overview  
This section provides a detailed description of all memory and registers.  
4.10.3.2 Module memory map  
The memory map for the TIM16B4C module is given in Table 63.  
Table 190. Module memory map  
Offset  
Name  
7
6
5
4
3
2
1
0
(176)  
TIOS  
R
0
0
0
0
0x20  
IOS3  
IOS2  
IOS1  
IOS0  
Timer Input Capture/Output  
Compare Select  
W
CFORC  
Timer Compare Force Register  
OC3M  
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x21  
(177)  
FOC3  
FOC2  
FOC1  
FOC0  
0x22  
0x23  
OC3M3  
OC3D3  
OC3M2  
OC3D2  
OC3M1  
OC3D1  
OC3M0  
OC3D0  
Output Compare 3 Mask Register  
OC3D  
W
R
Output Compare 3 Data Register  
TCNT (hi)  
W
R
0x24  
(178)  
Timer Count Register  
TCNT (lo)  
W
R
TCNT  
0x25  
(178)  
Timer Count Register  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
140/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 190. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(176)  
TSCR1  
Timer System Control Register 1  
TTOV  
R
W
R
0
0
0
0
0
0
0x26  
0x27  
0x28  
0x29  
0x2A  
0x2B  
0x2C  
0x2D  
TEN  
0
TFFCA  
0
0
0
TOV3  
OM1  
TOV2  
OL1  
TOV1  
OM0  
TOV0  
OL0  
Timer Toggle Overflow Register  
TCTL1  
W
R
OM3  
OL3  
OM2  
OL2  
Timer Control Register 1  
TCTL2  
W
R
EDG3B  
0
EDG3A  
0
EDG2B  
0
EDG2A  
0
EDG1B  
C3I  
EDG1A  
C2I  
EDG0B  
C1I  
EDG0A  
C0I  
Timer Control Register 2  
TIE  
W
R
Timer Interrupt Enable Register  
TSCR2  
W
R
0
0
0
0
0
0
0
0
0
TOI  
0
TCRE  
PR2  
PR1  
PR0  
Timer System Control Register 2  
TFLG1  
W
R
C3F  
0
C2F  
0
C1F  
0
C0F  
0
Main Timer Interrupt Flag 1  
TFLG2  
W
R
TOF  
Main Timer Interrupt Flag 2  
TC0 (hi)  
W
R
0x2E  
(179)  
Timer Input Capture/Output  
Compare Register 0  
W
R
TC0  
TC1  
TC2  
TC3  
TC0 (lo)  
0x2F  
(179)  
Timer Input Capture/Output  
Compare Register 0  
W
R
TC1 (hi)  
0x30  
(179)  
Timer Input Capture/Output  
Compare Register 1  
W
R
TC1 (lo)  
0x31  
(179)  
Timer Input Capture/Output  
Compare Register 1  
W
R
TC2 (hi)  
0x32  
(179)  
Timer Input Capture/Output  
Compare Register 2  
W
R
TC2 (lo)  
0x33  
(179)  
Timer Input Capture/Output  
Compare Register 2  
W
R
TC3 (hi)  
0x34  
(179)  
Timer Input Capture/Output  
Compare Register 3  
W
R
TC3 (lo)  
0x35  
(179)  
Timer Input Capture/Output  
Compare Register 3  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
141/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 190. Module memory map (continued)  
Offset  
Name  
7
6
5
4
3
2
1
0
(176)  
TIMTST  
R
0
0
0
0
0
0
0
0x36  
TCBYP  
(178)  
Timer Test Register  
W
Notes  
176. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
177. Always reads $00.  
178. Only writable in special modes. (Refer to the SOC Guide for different modes).  
179. A write to these registers has no meaning or effect during input capture.  
4.10.3.3 Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.10.3.3.1  
Timer input capture/output compare select (TIOS)  
Table 191. Timer input capture/output compare select (TIOS)  
(180)  
Offset  
Access: User read/write  
1 0  
0x20  
7
0
6
0
5
0
4
0
3
IOS3  
0
2
IOS2  
0
R
IOS1  
0
IOS0  
0
W
Reset  
0
0
0
0
Notes  
180. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 192. TIOS - register field descriptions  
Field  
Description  
Input Capture or Output Compare Channel Configuration  
0 - The corresponding channel acts as an input capture.  
1 - The corresponding channel acts as an output compare.  
3-0  
IOS[3-0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
142/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.10.3.3.2  
Timer compare force register (CFORC)  
Table 193. Timer compare force register (CFORC)  
(181)  
Offset  
Access: User write  
0x21  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
FOC3  
0
FOC2  
0
FOC1  
0
FOC0  
0
Reset  
0
0
0
0
Notes  
181. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 194. CFORC - register field descriptions  
Field  
Description  
Force Output Compare Action for Channel 3-0  
0 - Force output compare action disabled. Input capture or output compare channel configuration  
1 - Force output compare action enabled  
3-0  
FOC[3-0]  
A write to this register with the corresponding (FOC 3:0) data bit(s) set causes the action programmed for output compare on channel “n”  
to occur immediately.The action taken is the same as if a successful comparison had just taken place with the TCn register, except the  
interrupt flag does not get set.  
NOTE  
A successful channel 3 output compare overrides any channel 2:0 compare. If a forced output  
compare on any channel occurs at the same time as the successful output compare, then a forced  
output compare action will take precedence and the interrupt flag will not get set.  
4.10.3.3.3  
Output compare 3 mask register (OC3M)  
Table 195. Output compare 3 mask register (OC3M)  
(182)  
Offset  
Access: User read/write  
1 0  
0x22  
7
0
6
0
5
0
4
0
3
OC3M3  
0
2
OC3M2  
0
R
OC3M1  
0
OC3M0  
0
W
Reset  
0
0
0
0
Notes  
182. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 196. OC3M - register field descriptions  
Field  
Description  
Output Compare 3 Mask “n” Channel bit  
0 - Does not set the corresponding port to be an output port  
1 - Sets the corresponding port to be an output port when this corresponding TIOS bit is set to be an output compare  
3-0  
OC3M[3-0]  
Setting the OC3Mn (n ranges from 0 to 2) will set the corresponding port to be an output port when the corresponding TIOSn (n ranges  
from 0 to 2) bit is set to be an output compare.  
NOTE  
Asuccessful channel 3 output compare overrides any channel 2:0 compares. For each OC3M bit that  
is set, the output compare action reflects the corresponding OC3D bit.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
143/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.10.3.3.4  
Output compare 3 data register (OC3D)  
Table 197. Output compare 3 data register (OC3D)  
(183)  
Offset  
Access: User read/write  
0x23  
7
0
6
0
5
0
4
0
3
OC3D3  
0
2
OC3D2  
0
1
OC3D1  
0
0
OC3D0  
0
R
W
Reset  
0
0
0
0
Notes  
183. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 198. OC3D - register field descriptions  
Field  
Description  
3
Output Compare 3 Data for Channel 3  
Output Compare 3 Data for Channel 2  
Output Compare 3 Data for Channel 1  
Output Compare 3 Data for Channel 0  
OC3D3  
2
OC3D2  
1
OC3D1  
0
OC3D0  
NOTE  
A channel 3 output compare will cause bits in the output compare 3 data register to transfer to the  
timer port data register if the corresponding output compare 3 mask register bits are set.  
4.10.3.3.5  
Timer count register (TCNT)  
Table 199. Timer count register (TCNT)  
(184)  
Offset  
Access: User read (anytime)/write (special mode)  
0x24, 0x25  
15  
14  
13  
12  
11  
10  
9
8
R
tcnt15  
tcnt14  
tcnt13  
tcnt12  
tcnt11  
tcnt10  
tcnt9  
tcnt8  
W
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
tcnt7  
0
tcnt6  
0
tcnt5  
0
tcnt4  
0
tcnt3  
0
tcnt2  
0
tcnt1  
0
tcnt0  
0
Reset  
Notes  
184. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 200. TCNT - register field descriptions  
Field  
Description  
15-0  
tcnt[15-0]  
16-Bit Timer Count Register  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
144/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
The 16-bit main timer is an up counter. Full access to the counter register should take place in one  
clock cycle. A separate read/write for high bytes and low bytes will give a different result than  
accessing them as a word. The period of the first count after a write to the TCNT registers may be a  
different length, because the write is not synchronized with the prescaler clock.  
4.10.3.3.6  
Timer system control register 1 (TSCR1)  
Table 201. Timer system control register 1 (TSCR1)  
(185)  
Offset  
Access: User read/write  
0x26  
7
TEN  
0
6
0
5
0
4
TFFCA  
0
3
0
2
0
1
0
0
R
W
0
Reset  
0
0
0
0
0
0
Notes  
185. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 202. TSCR1 - register field descriptions  
Field  
Description  
Timer Enable  
1 = Enables the timer.  
0 = Disables the timer. (Used for reducing power consumption).  
7
TEN  
Timer Fast Flag Clear All  
1 = For TFLG1 register, a read from an input capture or a write to the output compare channel [TC 3:0] causes the corresponding  
channel flag, CnF, to be cleared. For TFLG2 register, any access to the TCNT register clears the TOF flag. This has the advantage of  
eliminating software overhead in a separate clear sequence. Extra care is required to avoid accidental flag clearing due to unintended  
accesses.  
4
TFFCA  
0 = Allows the timer flag clearing.  
4.10.3.3.7  
Timer toggle on overflow register 1 (TTOV)  
Table 203. Timer toggle on overflow register 1 (TTOV)  
(186)  
Offset  
Access: User read/write  
1 0  
0x27  
7
0
6
0
5
0
4
0
3
TOV3  
0
2
TOV2  
0
R
TOV1  
0
TOV0  
0
W
Reset  
0
0
0
0
Notes  
186. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 204. TTOV - register field descriptions  
Field  
Description  
Toggle On Overflow Bits  
1 = Toggle output compare pin on overflow feature enabled.  
0 = Toggle output compare pin on overflow feature disabled.  
3-0  
TOV[3-0]  
NOTE  
TOVn toggles the output compare pin on overflow. This feature only takes effect when the  
corresponding channel is configured for an output compare mode. When set, an overflow toggle on  
the output compare pin takes precedence over forced output compare events.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
145/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.10.3.3.8  
Timer control register 1 (TCTL1)  
Table 205. Timer control register 1 (TCTL1)  
(187)  
Offset  
Access: User read/write  
0x28  
7
OM3  
0
6
OL3  
0
5
OM2  
0
4
OL2  
0
3
OM1  
0
2
OL1  
0
1
OM0  
0
0
OL0  
0
R
W
Reset  
Notes  
187. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 206. TCTL1 - register field descriptions  
Field  
Description  
7,5,3,1  
OMn  
Output Mode bit  
Output Level bit  
6,4,2,0  
OLn  
NOTE  
These four pairs of control bits are encoded to specify the output action to be taken as a result of a  
successful Output Compare on “n” channel. When either OMn or OLn, the pin associated with the  
corresponding channel becomes an output tied to its IOC. To enable output action by the OMn and  
OLn bits on a timer port, the corresponding bit in OC3M should be cleared.  
Table 207. Compare result output action  
OMn  
OLn  
Action  
0
0
1
1
0
1
0
1
Timer disconnected from output pin logic  
Toggle OCn output line  
Clear OCn output line to zero  
Set OCn output line to one  
4.10.3.3.9  
Timer control register 2 (TCTL2)  
Table 208. Timer control register 2 (TCTL2)  
(188)  
Offset  
Access: User read/write  
1 0  
0x29  
7
6
EDG3A  
0
5
EDG2B  
0
4
EDG2A  
0
3
EDG1B  
0
2
EDG1A  
0
R
EDG3B  
0
EDG0B  
0
EDG0A  
0
W
Reset  
Notes  
188. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 209. TCTL2 - register field descriptions  
Field  
Description  
EDGnB,EDGn  
A
Input Capture Edge Control  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
146/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
These four pairs of control bits configure the input capture edge detector circuits.  
Table 210. Edge detector circuit configuration  
EDGnB  
EDGnA  
Configuration  
Capture disabled  
0
0
1
1
0
1
0
1
Capture on rising edges only  
Capture on falling edges only  
Capture on any edge (rising or falling)  
4.10.3.3.10 Timer interrupt enable register (TIE)  
Table 211. Timer interrupt enable register (TIE)  
(189)  
Offset  
Access: User read/write  
0x2A  
7
0
6
0
5
0
4
0
3
C3I  
0
2
C2I  
0
1
C1I  
0
0
C0I  
0
R
W
Reset  
0
0
0
0
Notes  
189. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 212. TIE - register field descriptions  
Field  
Description  
Input Capture/Output Compare Interrupt Enable.  
1 = Enables corresponding Interrupt flag (CnF of TFLG1 register) to cause a hardware interrupt  
0 = Disables corresponding Interrupt flag (CnF of TFLG1 register) from causing a hardware interrupt  
3-0  
C[3-0]I  
4.10.3.3.11 Timer system control register 2 (TSCR2)  
Table 213. Timer system control register 2 (TSCR2)  
(190)  
Offset  
Access: User read/write  
1 0  
0x2B  
7
TOI  
0
6
0
5
0
4
0
3
TCRE  
0
2
PR2  
0
R
PR1  
0
PR0  
0
W
Reset  
0
0
0
Notes  
190. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 214. TIE - register field descriptions  
Field  
Description  
Timer Overflow Interrupt Enable  
1 = Hardware interrupt requested when TOF flag set in TFLG2 register.  
0 = Hardware Interrupt request inhibited.  
7
TOI  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
147/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 214. TIE - register field descriptions  
Field  
Description  
TCRE — Timer Counter Reset Enable  
3
1 = Enables timer counter reset by a successful output compare on channel 3  
0 = Inhibits timer counter reset and counter continues to run.  
TCRE  
3-0  
Timer Prescaler Select  
PR[2:0]  
These three bits select the frequency of the timer prescaler clock derived from the bus clock as shown in Table 215.  
NOTE  
This mode of operation is similar to an up-counting modulus counter.  
If register TC3 = $0000 and TCRE = 1, the timer counter register (TCNT) will stay at $0000  
continuously. If register TC3 = $FFFF and TCRE = 1, TOF will not be set when the timer counter  
register (TCNT) is reset from $FFFF to $0000.  
The newly selected prescale factor will not take effect until the next synchronized edge, where all  
prescale counter stages equal zero.  
Table 215. Timer clock selection  
(191)  
PR2  
0
PR1  
0
PR0  
0
Timer Clock  
TimerClk / 1  
TimerClk / 2  
TimerClk / 4  
TimerClk / 8  
TimerClk / 16  
TimerClk / 32  
TimerClk / 64  
TimerClk / 128  
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Notes  
191. TimerClk = D2DCLK/4 or ALFCLK  
4.10.3.3.12 Main timer interrupt flag 1 (TFLG1)  
Table 216. Main timer interrupt flag 1 (TFLG1)  
(192)  
Offset  
Access: User read/write  
1 0  
0x2C  
7
0
6
0
5
0
4
0
3
C3F  
0
2
C2F  
0
R
W
C1F  
0
C0F  
0
Reset  
0
0
0
0
Notes  
192. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 217. TFLG1 - register field descriptions  
Field  
Description  
Input Capture/Output Compare Channel Flag.  
1 = Input capture or output compare event occurred  
0 = No event (input capture or output compare event) occurred.  
3-0  
C[3:0]F  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
148/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
These flags are set when an input capture or output compare event occurs. Flag set on a particular  
channel is cleared by writing a one to that corresponding CnF bit. Writing a zero to CnF bit has no  
effect on its status. When TFFCA bit in TSCR register is set, a read from an input capture or a write  
into an output compare channel will cause the corresponding channel flag CnF to be cleared.  
4.10.3.3.13 Main timer interrupt flag 2 (TFLG2)  
Table 218. Main timer interrupt flag 2 (TFLG2)  
(193)  
Offset  
Access: User read/write  
0x2D  
7
TOF  
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
Notes  
193. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 219. TFLG2 - register field descriptions  
Field  
Description  
Timer Overflow Flag  
7
1 = Indicates that an interrupt has occurred (Set when 16-bit free-running timer counter overflows from $FFFF to $0000)  
0 = Flag indicates an interrupt has not occurred.  
TOF  
NOTE  
The TFLG2 register indicates when an interrupt has occurred. Writing a one to the TOF bit will clear  
it. Any access to TCNT will clear TOF bit of TFLG2 register if the TFFCA bit in TSCR register is set.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
149/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.10.3.3.14 Timer input capture/output compare registers (TC3 - TC0)  
Table 220. Timer input capture/output compare register 0 (TC0)  
(194)  
Offset  
Access: User read/write  
9 8  
0x2E, 0x2F  
15  
14  
13  
12  
11  
10  
R
W
tc0_15  
tc0_14  
tc0_13  
tc0_12  
tc0_11  
tc0_10  
tc0_9  
tc0_8  
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
tc0_7  
0
tc0_6  
0
tc0_5  
0
tc0_4  
0
tc0_3  
0
tc0_2  
0
tc0_1  
0
tc0_0  
0
Reset  
Notes  
194. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 221. Timer input capture/output compare register 1(TC1)  
(195)  
Offset  
Access: User read/write  
9 8  
0x30, 0x31  
15  
14  
13  
12  
11  
10  
R
tc1_15  
tc1_14  
tc1_13  
tc1_12  
tc1_11  
tc1_10  
tc1_9  
tc1_8  
W
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
tc1_7  
0
tc1_6  
0
tc1_5  
0
tc1_4  
0
tc1_3  
0
tc1_2  
0
tc1_1  
0
tc1_0  
0
Reset  
Notes  
195. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 222. Timer input capture/output compare register 2(TC2)  
(196)  
Offset  
Access: User read/write  
9 8  
0x32, 0x33  
15  
14  
13  
12  
11  
10  
R
tc2_15  
tc2_14  
tc2_13  
tc2_12  
tc2_11  
tc2_10  
tc2_9  
tc2_8  
W
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
tc2_7  
0
tc2_6  
0
tc2_5  
0
tc2_4  
0
tc2_3  
0
tc2_2  
0
tc2_1  
0
tc2_0  
0
Reset  
Notes  
196. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
150/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 223. Timer input capture/output compare register 3(TC3)  
(197)  
Offset  
Access: User read/write  
0x34, 0x35  
15  
14  
13  
12  
11  
10  
9
8
R
tc3_15  
tc3_14  
tc3_13  
tc3_12  
tc3_11  
tc3_10  
tc3_9  
tc3_8  
W
Reset  
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
tc3_7  
0
tc3_6  
0
tc3_5  
0
tc3_4  
0
tc3_3  
0
tc3_2  
0
tc3_1  
0
tc3_0  
0
Reset  
Notes  
197. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 224. TCn - register field descriptions  
Field  
Description  
15-0  
tcn[15-0]  
16 Timer Input Capture/Output Compare Registers  
NOTE  
TRead anytime. Write anytime for output compare function. Writes to these registers have no effect  
during input capture.  
Depending on the TIOS bit for the corresponding channel, these registers are used to latch the value  
of the free-running counter when a defined transition is sensed by the corresponding input capture  
edge detector or to trigger an output action for output compare.  
Read/Write access in byte mode for high byte should takes place before low byte otherwise it will give  
a different result.  
4.10.4 Functional description  
4.10.4.1 general  
This section provides a complete functional description of the timer TIM16B4C block. Refer to the detailed timer block diagram in Figure 41  
as necessary.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
151/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
D2D Clock / 4 or ALFCLK  
channel 3 output  
compare  
PR[2:1:0]  
TCRE  
PRESCALER  
CxI  
TCNT(hi):TCNT(lo)  
16-BIT COUNTER  
CxF  
CLEAR COUNTER  
TOF  
TOI  
INTERRUPT  
TOF  
LOGIC  
TE  
CHANNEL 0  
16-BIT COMPARATOR  
TC0  
C0F  
C0F  
CH. 0 CAPTURE  
CH. 0 COMPARE  
OM:OL0  
IOC0 PIN  
LOGIC  
IOC0 PIN  
TOV0  
EDGE  
DETECT  
EDG0A EDG0B  
IOC0  
CHANNEL3  
16-BIT COMPARATOR  
TC3  
C3F  
C3F  
CH.3 CAPTURE  
CH.3 COMPARE  
IOC3 PIN  
LOGIC  
OM:OL3  
TOV3  
IOC3 PIN  
EDG3A  
EDG3B  
EDGE  
DETECT  
IOC3  
Figure 41. Detailed timer block diagram  
4.10.4.2 Prescaler  
The prescaler divides the bus clock by 1, 2, 4, 8,16, 32, 64, or 128. The prescaler select bits, PR[2:0], select the prescaler divisor. PR[2:0]  
are in the timer system control register 2 (TSCR2).  
4.10.4.3 Input capture  
Clearing the I/O (input/output) select bit, IOSn, configures channel n as an input capture channel. The input capture function captures the  
time at which an external event occurs. When an active edge occurs on the pin of an input capture channel, the timer transfers the value  
in the timer counter into the timer channel registers, TCn.  
The minimum pulse width for the input capture input is greater than two bus clocks. An input capture on channel n sets the CnF flag. The  
CnI bit enables the CnF flag to generate interrupt requests.  
4.10.4.4 Output compare  
Setting the I/O select bit, IOSn, configures channel n as an output compare channel. The output compare function can generate a periodic  
pulse with a programmable polarity, duration, and frequency. When the timer counter reaches the value in the channel registers of an  
output compare channel, the timer can set, clear, or toggle the channel pin. An output compare on channel n sets the CnF flag. The CnI  
bit enables the CnF flag to generate interrupt requests.  
The output mode and level bits, OMn and OLn, select set, clear, toggle on output compare. Clearing both OMn and OLn disconnects the  
pin from the output logic. Setting a force output compare bit, FOCn, causes an output compare on channel n. A forced output compare  
does not set the channel flag.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
152/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
A successful output compare on channel 3 overrides output compares on all other output compare channels. The output compare 3 mask  
register masks the bits in the output compare 3 data register. The timer counter reset enable bit, TCRE, enables channel 3 output  
compares to reset the timer counter.Writing to the timer port bit of an output compare pin does not affect the pin state. The value written  
is stored in an internal latch. When the pin becomes available for general-purpose output, the last value written to the bit appears at the pin.  
4.10.5 Resets  
4.10.5.1 General  
The reset state of each individual bit is listed within the Register Description Section 4.10.3, “Memory map and registers", which details  
the registers and their bit-fields.  
4.10.6 Interrupts  
4.10.6.1 General  
This section describes interrupts originated by the TIM16B4C block. Table 225 lists the interrupts generated by the TIM16B4C to  
communicate with the MCU.  
Table 225. TIM16B4C interrupts  
Interrupt  
C[3:0]F  
TOF  
Offset  
Vector  
Priority  
Source  
Description  
-
-
-
-
-
-
Timer Channel 3-0  
Timer Overflow  
Active high timer channel interrupts 3-0  
Timer Overflow interrupt  
4.10.6.2 Description of interrupt operation  
The TIM16B4C uses a total of 5 interrupt vectors. The interrupt vector offsets and interrupt numbers are chip dependent. More information  
on interrupt vector offsets and interrupt numbers can be found in Section 4.4, “Interrupt module - IRQ".  
Channel [3:0] Interrupt  
These active high outputs is asserted by the module to request a timer channel 3 – 0 interrupt following an input capture or output compare  
event on these channels [3-0]. For the interrupt to be asserted on a specific channel, the enable, CnI bit of TIE register should be set.  
These interrupts are serviced by the system controller.  
4.10.6.2.1  
Timer overflow interrupt (TOF)  
This active high output will be asserted by the module to request a timer overflow interrupt, following the timer counter overflow when the  
overflow enable bit (TOI) bit of TFLG2 register is set. This interrupt is serviced by the system controller.  
4.11 General purpose I/O - GPIO  
4.11.1 Introduction  
The 3 General Purpose I/Os (PTB0...2) are multipurpose ports, making internal signals available externally and providing digital inputs.  
L0 (PTB3) offers an additional wake-up on rising edge during low power mode.  
Additional routing options allow connections to the LIN, TIMER, and SCI module.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
153/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.2 Features  
Internal Clamping Structure to operate as High Voltage Input (PTB3/L0 only).  
5.0 V (VDDX) digital port Input/Output (PTB3/L0 only as Input)  
Selectable internal pull-up (PTB3/L0 pull-down) resistor  
Selectable Wake-up Input during Low Power mode (PTB3/L0 - rising edge only).  
Selectable Timer Channel Input / Output  
Selectable connection to LIN / SCI  
4.11.3 Block diagram  
0
1
Z
PD3  
PTB3 / L0  
PDE3  
PTWU  
Wake-up Detection  
TCAP3..0  
VDDX  
=1  
PTBXx  
LINRX  
TX  
LIN  
RX  
SCITX  
PUEx  
IC  
TCOMP3..0  
WKUP  
TIMER3..0  
Z
OC  
PTBx  
PTB0..PTB2  
(x = 2..0)  
Internal Wake-up  
DIRx (M)  
PDx  
TCAP3..0  
SCIRX  
LINTX  
TX  
SCI  
RX  
Figure 42. General purpose I/O - block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
154/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.4 High voltage wake-up input - PTB3 / L0  
To offer robust high voltage wake-up capabilities, the following structure is implemented for PTB3/L0.  
47k  
1k  
2k  
ESD  
47n  
1p  
100k  
6V clamp  
ESD / clamp  
External  
Input  
components  
buffer  
Figure 43. L0 / PTB3 input structure (typical values indicated)  
NOTE  
Due the different implementation of the L0/PTB3, the PTWU bit needs to be set in the GPIO_IN3  
register, to read the port status PD3 during Normal mode.  
4.11.4.1 Modes of operation  
The full GPIO functionality is only available during Normal mode. The only features in available in both low power modes is the PTB3/L0  
external wake-up and the wake-up routing of the timer output compare.  
NOTE  
TCOMP3...0 needs to be configured to allow timer output compare interrupts to generate a system  
wake-up.  
4.11.5 Memory map and registers  
4.11.5.1 Overview  
This section provides a detailed description of the memory map and registers.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
155/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.5.2 Module memory map  
The memory map for the GPIO module is given in Table 63  
Table 226. Module memory map  
Offset  
Name  
7
6
5
4
3
2
1
0
(198), (199)  
R
W
R
0
0
0
0
0
0
0
0
DIR2M  
DIR1M  
DIR0M  
PE3M  
PE2M  
PE1M  
PE0M  
GPIO_CTL  
GPIO control register  
0x40  
0
0
0
0
DIR2  
0
DIR1  
0
DIR0  
0
PE3  
PE2  
PE1  
PE0  
W
R
GPIO_PUC  
GPIO pull up configuration  
GPIO_DATA  
0x42  
0x43  
0x44  
0x45  
0x46  
0x47  
0x48  
0x49  
0x4A  
0x4B  
0x4C  
0x4D  
0x4E  
PDE3  
PD3  
PUE2  
PD2  
PUE1  
PD1  
PUE0  
PD0  
W
R
0
0
0
GPIO port data register  
GPIO_IN0  
W
R
0
TCAP3  
TCAP2  
TCAP1  
TCAP0  
SCIRX  
SCITX  
SCIRX  
SCITX  
SCIRX  
SCITX  
LINTX  
LINRX  
LINTX  
LINRX  
LINTX  
Port 0 input configuration  
GPIO_OUT0  
W
R
0
PTBX0  
0
WKUP  
0
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
Port 0 output configuration  
GPIO_IN1  
W
R
TCAP3  
TCAP2  
TCAP1  
TCAP0  
Port 1 input configuration  
GPIO_OUT1  
W
R
0
PTBX1  
0
WKUP  
0
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
Port 1 output configuration  
GPIO_IN2  
W
R
TCAP3  
TCAP2  
TCAP1  
TCAP0  
Port 2 input configuration  
GPIO_OUT2  
W
R
0
PTBX2  
0
WKUP  
TCOMP3 TCOMP2 TCOMP1 TCOMP0  
LINRX  
0
Port 2 output configuration  
GPIO_IN3  
W
R
PTWU  
0
PTWU  
0
TCAP3  
0
TCAP2  
0
TCAP1  
0
TCAP0  
0
Port 3 input configuration  
W
R
0
0
0
0
0
0
0
0
0
0
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
W
R
W
R
0x4F  
W
Notes  
198. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
199. Register Offset with the “lo” address value not shown have to be accessed in 16-Bit mode. 8-Bit access will not function.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
156/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.5.3 Register descriptions  
4.11.5.3.1  
GPIO control register (GPIO_CTL)  
Table 227. GPIO control register (GPIO_CTL)  
Offset  
Access: User read/write  
0x40  
(200),(201)  
15  
0
14  
13  
12  
11  
10  
9
8
R
W
0
0
0
0
0
0
0
DIR2M  
DIR1M  
DIR0M  
PE3M  
PE2M  
PE1M  
PE0M  
Reset  
0
7
0
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
DIR2  
0
DIR1  
0
DIR0  
0
PE3  
0
PE2  
0
PE1  
0
PE0  
0
Reset  
0
Notes  
200. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
201. Those Registers are 16-Bit access only.  
Table 228. GPIO control register (GPIO_CTL)  
Field  
Description  
Data Direction PTB2 - Mask  
0 - writing the DIR2 bit will have no effect  
1 - writing the DIR2 bit will be effective  
14  
DIR2M  
Data Direction PTB1 - Mask  
0 - writing the DIR1 bit will have no effect  
1 - writing the DIR1 bit will be effective  
13  
DIR1M  
Data Direction PTB0 - Mask  
0 - writing the DIR0 bit will have no effect  
1 - writing the DIR0 bit will be effective  
12  
DIR0M  
Port 3 Enable - Mask  
0 - writing the PE3 bit will have no effect  
1 - writing the PE3 bit will be effective  
11  
PE3M  
Port 2 Enable - Mask  
0 - writing the PE2 bit will have no effect  
1 - writing the PE2 bit will be effective  
10  
PE2M  
Port 1 Enable - Mask  
0 - writing the PE1 bit will have no effect  
1 - writing the PE1 bit will be effective  
9
PE1M  
Port 0 Enable - Mask  
0 - writing the PE0 bit will have no effect  
1 - writing the PE0 bit will be effective  
8
PE0M  
Data Direction PTB2  
0 - PTB2 configured as Input  
1 - PTB2 configured as Output  
6
DIR2  
Data Direction PTB1  
0 - PTB1 configured as Input  
1 - PTB1 configured as Output  
5
DIR1  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
157/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 228. GPIO control register (GPIO_CTL) (continued)  
Field  
Description  
Data Direction PTB0  
4
0 - PTB0 configured as Input  
DIR0  
1 - PTB0 configured as Output  
(202)  
Port 3 Enable  
3
PE3  
0 - PTB3 Disabled (Z state)  
1 - PTB3 Enabled (I)  
(202)  
Port 2 Enable  
2
0 - PTB2 disabled (Z state)  
PE2  
1 - PTB2 enabled (I/O)  
(202)  
Port 1 Enable  
1
0 - PTB1 disabled (Z state)  
PE1  
1 - PTB1 enabled (I/O)  
(202)  
Port 0 Enable  
0
PE0  
0 - PTB0 disabled (Z state)  
1 - PTB0 enabled (I/O)  
Notes  
202. The port logic is always enabled. Setting PEx will connect the logic to the port I/O buffers.  
4.11.5.3.2  
GPIO pull-up configuration (GPIO_PUC)  
Table 229. GPIO pull-up configuration (GPIO_PUC)  
(203)  
Offset  
Access: User read/write  
1 0  
0x42  
7
0
6
0
5
0
4
0
3
PDE3  
0
2
PUE2  
0
R
PUE1  
0
PUE0  
0
W
Reset  
0
0
0
0
Notes  
203. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 230. GPIO pull-up configuration (GPIO_PUC)  
Field  
Description  
PTB3 Pull-down Enable  
0 - PTB3 pull-down disabled  
1 - PTB3 pull-down enabled  
3
PDE3  
PTB2 Pull-up Enable  
0 - PTB2 pull-up disabled  
1 - PTB2 pull-up enabled  
2
PUE2  
PTB1 Pull-up Enable  
0 - PTB1 pull-up disabled  
1 - PTB1 pull-up enabled  
1
PUE1  
PTB0 Pull-up Enable  
0 - PTB0 pull-up disabled  
1 - PTB0 pull-up enabled  
0
PUE0  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
158/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.5.3.3  
GPIO port data register (GPIO_DATA)  
Table 231. GPIO port data register (GPIO_DATA)  
(204)  
Offset  
Access: User read  
0x43  
7
0
6
0
5
0
4
0
3
2
1
0
(205)  
R
PD3  
PD2  
PD1  
PD0  
W
Notes  
204. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
205. Due the different implementation of the L0/PTB3, PTWU needs to be set in the GPIO_IN3 to read the PD3 port status during normal mode.  
Table 232. GPIO port data register (GPIO_DATA)  
Field  
Description  
3
PTB3 Data Register  
PD3  
A read returns the value of the PTB3 buffer.  
2
PTB2 Data Register  
PD2  
A read returns the value of the PTB2 buffer.  
1
PTB1 Data Register  
PD1  
A read returns the value of the PTB1 buffer.  
0
PTB0 Data Register  
PD0  
A read returns the value of the PTB0 buffer.  
4.11.5.3.4  
Port 0 input configuration (GPIO_IN0)  
Table 233. Port 0 input configuration (GPIO_IN0)  
(206)  
Offset  
Access: User read/write  
0x44  
7
0
6
TCAP3  
0
5
TCAP2  
0
4
TCAP1  
0
3
TCAP0  
0
2
SCIRX  
0
1
0
0
R
LINTX  
0
W
Reset  
0
0
Notes  
206. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 234. Port 0 input configuration (GPIO_IN0)  
Field  
Description  
PTB0 - Timer Input Capture Channel 3  
0 - PTB0 Input buffer disconnected from Timer Channel 3 - Input Capture  
1 - PTB0 Input buffer routed to Timer Channel 3 - Input Capture  
6
TCAP3  
PTB0 - Timer Input Capture Channel 2  
0 - PTB0 Input buffer disconnected from Timer Channel 2 - Input Capture  
1 - PTB0 Input buffer routed to Timer Channel 2 - Input Capture  
5
TCAP2  
PTB0 - Timer Input Capture Channel 1  
0 - PTB0 Input buffer disconnected from Timer Channel 1 - Input Capture  
1 - PTB0 Input buffer routed to Timer Channel 1 - Input Capture  
4
TCAP1  
PTB0 - Timer Input Capture Channel 0  
0 - PTB0 Input buffer disconnected from Timer Channel 0 - Input Capture  
1 - PTB0 Input buffer routed to Timer Channel 0 - Input Capture  
3
TCAP0  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
159/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 234. Port 0 input configuration (GPIO_IN0) (continued)  
Field  
Description  
PTB0 - SCI Module Rx Input  
2
0 - PTB0 Input buffer disconnected from SCI Module Rx Input  
1 - PTB0 Input buffer routed to SCI Module Rx Input  
SCIRX  
PTB0 - LIN Module Tx Input  
0 - PTB0 Input buffer disconnected from LIN Module Tx Input  
1 - PTB0 Input buffer routed to LIN Module Tx Input  
1
LINTX  
4.11.5.3.5  
Port 0 output configuration (GPIO_OUT0)  
Table 235. Port 0 output configuration (GPIO_OUT0)  
(207)  
Offset  
Access: User read/write  
0x45  
7
6
TCOMP3  
0
5
TCOMP2  
0
4
TCOMP1  
0
3
TCOMP0  
0
2
SCITX  
0
1
LINRX  
0
0
R
W
0
PTBX0  
0
WKUP  
0
Reset  
Notes  
207. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 236. Port 0 output configuration (GPIO_OUT0)  
Field  
Description  
PTB0 - Wake-up output  
0 - Internal wake-up signal disconnected from PTB0 output buffer OR gate  
1 - Internal wake-up signal connected to PTB0 output buffer OR gate  
7
WKUP  
PTB0 - Timer Channel 3 - Output Compare output  
0 - Timer Channel 3 - output compare disconnected from PTB0 output buffer OR gate  
1 - Timer Channel 3 - output compare connected to PTB0 output buffer OR gate  
6
TCOMP3  
PTB0 - Timer Channel 2 - Output Compare output  
0 - Timer Channel 2 - output compare disconnected from PTB0 output buffer OR gate  
1 - Timer Channel 2 - output compare connected to PTB0 output buffer OR gate  
5
TCOMP2  
PTB0 - Timer Channel 1 - Output Compare output  
0 - Timer Channel 1 - output compare disconnected from PTB0 output buffer OR gate  
1 - Timer Channel 1 - output compare connected to PTB0 output buffer OR gate  
4
TCOMP1  
PTB0 - Timer Channel 0 - Output Compare output  
0 - Timer Channel 0 - output compare disconnected from PTB0 output buffer OR gate  
1 - Timer Channel 0 - output compare connected to PTB0 output buffer OR gate  
3
TCOMP0  
PTB0 - SCI TX Output  
0 - SCI TX output disconnected from PTB0 output buffer OR gate  
1 - SCI TX output connected to PTB0 output buffer OR gate  
2
SCITX  
PTB0 - LIN RX Output  
0 - LIN RX output disconnected from PTB0 output buffer OR gate  
1 - LIN RX output connected to PTB0 output buffer OR gate  
1
LINRX  
PTB0 - Output Buffer Control  
0 - PTB0 output buffer OR gate input = 0  
1 - PTB0 output buffer OR gate input = 1  
0
PTBX0  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
160/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.5.3.6  
Port 1 input configuration (GPIO_IN1)  
Table 237. Port 1 input configuration (GPIO_IN1)  
(208)  
Offset  
Access: User read/write  
0x46  
7
0
6
TCAP3  
0
5
TCAP2  
0
4
TCAP1  
0
3
TCAP0  
0
2
SCIRX  
0
1
LINTX  
0
0
R
W
Reset  
0
0
Notes  
208. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 238. Port 1 input configuration (GPIO_IN1)  
Field  
Description  
PTB1 - Timer Input Capture Channel 3  
0 - PTB1 Input buffer disconnected from Timer Channel 3 - Input Capture  
1 - PTB1 Input buffer routed to Timer Channel 3 - Input Capture  
6
TCAP3  
PTB1 - Timer Input Capture Channel 2  
0 - PTB1 Input buffer disconnected from Timer Channel 2 - Input Capture  
1 - PTB1 Input buffer routed to Timer Channel 2 - Input Capture  
5
TCAP2  
PTB1 - Timer Input Capture Channel 1  
0 - PTB1 Input buffer disconnected from Timer Channel 1 - Input Capture  
1 - PTB1 Input buffer routed to Timer Channel 1 - Input Capture  
4
TCAP1  
PTB1 - Timer Input Capture Channel 0  
0 - PTB1 Input buffer disconnected from Timer Channel 0 - Input Capture  
1 - PTB1 Input buffer routed to Timer Channel 0 - Input Capture  
3
TCAP0  
PTB1 - SCI Module Rx Input  
0 - PTB1 Input buffer disconnected from SCI Module Rx Input  
1 - PTB1 Input buffer routed to SCI Module Rx Input  
2
SCIRX  
PTB1 - LIN Module Tx Input  
0 - PTB1 Input buffer disconnected from LIN Module Tx Input  
1 - PTB1 Input buffer routed to LIN Module Tx Input  
1
LINTX  
4.11.5.3.7  
Port 1 output configuration (GPIO_OUT1)  
Table 239. Port 1 output configuration (GPIO_OUT1)  
(209)  
Offset  
Access: User read/write  
0x47  
7
6
TCOMP3  
0
5
TCOMP2  
0
4
TCOMP1  
0
3
TCOMP0  
0
2
SCITX  
0
1
0
0
R
WKUP  
0
LINRX  
0
W
PTBX1  
0
Reset  
Notes  
209. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
161/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 240. Port 1 output configuration (GPIO_OUT1)  
Field  
Description  
PTB1 - Wake-up output  
7
0 - Internal wake-up signal disconnected from PTB1 output buffer OR gate  
1 - Internal wake-up signal connected to PTB1 output buffer OR gate  
WKUP  
PTB1 - Timer Channel 3 - Output Compare output  
0 - Timer Channel 3 - output compare disconnected from PTB1 output buffer OR gate  
1 - Timer Channel 3 - output compare connected to PTB1 output buffer OR gate  
6
TCOMP3  
PTB1 - Timer Channel 2 - Output Compare output  
0 - Timer Channel 2 - output compare disconnected from PTB1 output buffer OR gate  
1 - Timer Channel 2 - output compare connected to PTB1 output buffer OR gate  
5
TCOMP2  
PTB1 - Timer Channel 1 - Output Compare output  
0 - Timer Channel 1 - output compare disconnected from PTB1 output buffer OR gate  
1 - Timer Channel 1 - output compare connected to PTB1 output buffer OR gate  
4
TCOMP1  
PTB1 - Timer Channel 0 - Output Compare output  
0 - Timer Channel 0 - output compare disconnected from PTB1 output buffer OR gate  
1 - Timer Channel 0 - output compare connected to PTB1 output buffer OR gate  
3
TCOMP0  
PTB1 - SCI TX Output  
0 - SCI TX output disconnected from PTB1 output buffer OR gate  
1 - SCI TX output connected to PTB1 output buffer OR gate  
2
SCITX  
PTB1 - LIN RX Output  
0 - LIN RX output disconnected from PTB1 output buffer OR gate  
1 - LIN RX output connected to PTB1 output buffer OR gate  
1
LINRX  
PTB1 - Output Buffer Control  
0 - PTB1 output buffer OR gate input = 0  
1 - PTB1 output buffer OR gate input = 1  
0
PTBX1  
4.11.5.3.8  
Port 2 input configuration (GPIO_IN2)  
Table 241. Port 2 input configuration (GPIO_IN2)  
(210)  
Offset  
Access: User read/write  
0x48  
7
0
6
TCAP3  
0
5
TCAP2  
0
4
TCAP1  
0
3
TCAP0  
0
2
SCIRX  
0
1
0
0
R
LINTX  
0
W
Reset  
0
0
Notes  
210. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 242. Port 2 input configuration (GPIO_IN2)  
Field  
Description  
PTB2 - Timer Input Capture Channel 3  
0 - PTB2 Input buffer disconnected from Timer Channel 3 - Input Capture  
1 - PTB2 Input buffer routed to Timer Channel 3 - Input Capture  
6
TCAP3  
PTB2 - Timer Input Capture Channel 2  
0 - PTB2 Input buffer disconnected from Timer Channel 2 - Input Capture  
1 - PTB2 Input buffer routed to Timer Channel 2 - Input Capture  
5
TCAP2  
PTB2 - Timer Input Capture Channel 1  
0 - PTB2 Input buffer disconnected from Timer Channel 1 - Input Capture  
1 - PTB2 Input buffer routed to Timer Channel 1 - Input Capture  
4
TCAP1  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
162/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 242. Port 2 input configuration (GPIO_IN2) (continued)  
Field  
Description  
PTB2 - Timer Input Capture Channel 0  
3
0 - PTB2 Input buffer disconnected from Timer Channel 0 - Input Capture  
1 - PTB2 Input buffer routed to Timer Channel 0 - Input Capture  
TCAP0  
PTB2 - SCI Module Rx Input  
0 - PTB2 Input buffer disconnected from SCI Module Rx Input  
1 - PTB2 Input buffer routed to SCI Module Rx Input  
2
SCIRX  
PTB2 - LIN Module Tx Input  
0 - PTB2 Input buffer disconnected from LIN Module Tx Input  
1 - PTB2 Input buffer routed to LIN Module Tx Input  
1
LINTX  
4.11.5.3.9  
Port 2 output configuration (GPIO_OUT2)  
Table 243. Port 2 output configuration (GPIO_OUT2)  
(210)  
Offset  
Access: User read/write  
0x49  
7
6
TCOMP3  
0
5
TCOMP2  
0
4
TCOMP1  
0
3
TCOMP0  
0
2
SCITX  
0
1
LINRX  
0
0
R
0
PTBX2  
0
WKUP  
0
W
Reset  
Notes  
211. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 244. Port 2 output configuration (GPIO_OUT2)  
Field  
Description  
PTB2 - Wake-up output  
0 - Internal wake-up signal disconnected from PTB2 output buffer OR gate  
1 - Internal wake-up signal connected to PTB2 output buffer OR gate  
7
WKUP  
PTB2 - Timer Channel 3 - Output Compare output  
0 - Timer Channel 3 - output compare disconnected from PTB2 output buffer OR gate  
1 - Timer Channel 3 - output compare connected to PTB2 output buffer OR gate  
6
TCOMP3  
PTB2 - Timer Channel 2 - Output Compare output  
0 - Timer Channel 2 - output compare disconnected from PTB2 output buffer OR gate  
1 - Timer Channel 2 - output compare connected to PTB2 output buffer OR gate  
5
TCOMP2  
PTB2 - Timer Channel 1 - Output Compare output  
0 - Timer Channel 1 - output compare disconnected from PTB2 output buffer OR gate  
1 - Timer Channel 1 - output compare connected to PTB2 output buffer OR gate  
4
TCOMP1  
PTB2 - Timer Channel 0 - Output Compare output  
0 - Timer Channel 0 - output compare disconnected from PTB2 output buffer OR gate  
1 - Timer Channel 0 - output compare connected to PTB2 output buffer OR gate  
3
TCOMP0  
PTB2 - SCI TX Output  
0 - SCI TX output disconnected from PTB2 output buffer OR gate  
1 - SCI TX output connected to PTB2 output buffer OR gate  
2
SCITX  
PTB2 - LIN RX Output  
0 - LIN RX output disconnected from PTB2 output buffer OR gate  
1 - LIN RX output connected to PTB2 output buffer OR gate  
1
LINRX  
PTB2 - Output Buffer Control  
0 - PTB2 output buffer OR gate input = 0  
1 - PTB2 output buffer OR gate input = 1  
0
PTBX2  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
163/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.11.5.3.10 Port 3 input configuration (GPIO_IN3)  
Table 245. Port 3 input configuration (GPIO_IN3)  
(212)  
Offset  
Access: User read/write  
0x4A  
7
6
TCAP3  
0
5
TCAP2  
0
4
TCAP1  
0
3
TCAP0  
0
2
0
1
0
0
0
R
PTWU  
0
W
Reset  
0
0
0
Notes  
212. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 246. Port 3 input configuration (GPIO_IN3)  
Field  
Description  
PTB3 Wake-up  
7
0 - PTB3 Input buffer low power mode wake-up circuity disabled  
1 - PTB3 Input buffer low power mode wake-up circuity enabled  
PTWU  
PTB3 - Timer Input Capture Channel 3  
0 - PTB3 Input buffer disconnected from Timer Channel 3 - Input Capture  
1 - PTB3 Input buffer routed to Timer Channel 3 - Input Capture  
6
TCAP3  
PTB3 - Timer Input Capture Channel 2  
0 - PTB3 Input buffer disconnected from Timer Channel 2 - Input Capture  
1 - PTB3 Input buffer routed to Timer Channel 2 - Input Capture  
5
TCAP2  
PTB3 - Timer Input Capture Channel 1  
0 - PTB3 Input buffer disconnected from Timer Channel 1 - Input Capture  
1 - PTB3 Input buffer routed to Timer Channel 1 - Input Capture  
4
TCAP1  
PTB3 - Timer Input Capture Channel 0  
0 - PTB3 Input buffer disconnected from Timer Channel 0 - Input Capture  
1 - PTB3 Input buffer routed to Timer Channel 0 - Input Capture  
3
TCAP0  
4.12 LIN  
4.12.1 Introduction  
The LIN bus pin provides a physical layer for single-wire communication in automotive applications. The LIN physical layer is designed to  
meet the LIN physical layer version 2.0 / 2.1 and J2602 specification, and has the following features:  
LIN physical layer 2.0 / 2.1 / J2602 compliant  
Slew rate selection 20 kBit, 10 kBit, and fast Mode (100 kBit)  
Overtemperature Shutdown - HTI  
Permanent Pull-up in Normal mode 30 k, 1.0 Min low power  
Current limitation  
Special J2602 compliant configuration  
Direct Rx / Tx access  
Optional external Rx / Tx access and routing to the TIMER Input through PTBx  
The LIN driver is a low side MOSFET with current limitation and thermal shutdown. An internal pull-up resistor with a serial diode structure  
is integrated, so no external pull-up components are required for the application in a slave node. The fall time from dominant to recessive  
and the rise time from recessive to dominant is controlled. The symmetry between both slopes is guaranteed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
164/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.12.2 Overview  
4.12.2.1 Block diagram  
Figure 44 shows the basic function of the LIN module.  
VSUP  
UV  
Under-  
voltage  
Wake Up  
LVSD (M)  
Detection  
DSER  
Wake-up  
Filter  
RSLAVE  
TOPTB  
TOSCI  
RX  
LIN  
Receiver  
SCI  
=1  
TX  
FROMSCI  
PTB  
0
1
FROMPTB  
TXDM (M)  
LGND  
SRS (M)[1:0]  
RDY  
Transmitter  
Control  
Over-  
temperature  
Detection  
OTIE (M)  
OT  
EN (M)  
Interrupt  
Figure 44. LIN module block diagram  
4.12.2.2 LIN pin  
The LIN pin offers high susceptibility immunity level from external disturbance, guaranteeing communication during external disturbances.  
See Section 3.8, “Electromagnetic compatibility (EMC)".  
4.12.2.3 Slew rate selection  
The slew rate can be selected for optimized operation at 10 kBit/s and 20 kBit/s as well as a fast baud rate (100 kBit) for test and  
programming. The slew rate can be adapted with the bits SRS[1:0] in the LIN Control Register (LIN_CTL). The initial slew rate is 20 kBit/s.  
4.12.2.4 Overtemperature shutdown (LIN interrupt)  
The output low side FET (transmitter) is protected against overtemperature conditions. In an overtemperature condition, the transmitter  
will be shut down, and the TO bit in the LIN Control Register (LIN_CTL) is set as long as the condition is present.  
If the OTIEM bit is set in the LIN Status Register (LIN_SR), an Interrupt IRQ will be generated. Acknowledge the interrupt by writing a “1”  
in the LIN Status Register (LIN_SR). To issue a new interrupt, the condition has to vanish and reoccur.  
The transmitter is automatically re-enabled once the overtemperature condition is gone and TxD is High.  
4.12.2.5 Low power mode and wake-up feature  
During Low Power mode operation, the transmitter of the physical layer is disabled. The receiver is still active and able to detect wake-up  
events on the LIN bus line.  
A dominant level longer than t  
Register (WSR).  
, followed by a rising edge will generate a wake-up event and be reported in the Wake-up Source  
PROPWL  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
165/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.12.2.6 J2602 compliance  
A Low Voltage Shutdown feature was implemented to allow controlled LIN driver behavior under low voltage conditions at VSUP. If LVSD  
is set, once VSUP is below the threshold VJ2602H, the LIN transmitter is not turned dominant again. The condition is indicated by the UV  
flag.  
4.12.2.7 Transmit/receiving line definition  
The LIN module can be connected to the SCI or PTB module, or can be directly controlled by the TXDM / RX bit  
4.12.2.8 Transmitter enable/ready  
The LIN transmitter must be enabled before transmission is possible (EN). The RDY bit is set to 1 about 50 µs after the LIN transmitter is  
enabled. This is due to the initialization time for the LIN transmitter, under some low voltage conditions.  
During this period (LIN enabled to RDY = 1), the LIN is forced to a recessive state.  
4.12.3 Memory map and registers  
4.12.3.1 Overview  
This section provides a detailed description of the memory map and registers.  
4.12.3.2 Module memory map  
The memory map for the LIN module is given in Table 63  
Table 247. Module memory map  
Offset  
Name  
7
6
5
4
3
2
1
0
(213),(214)  
R
W
R
0
0
0
0
0
0
0
0
OTIEM  
TXDM  
LVSDM  
ENM  
SRSM  
SRS  
LIN_CTL  
LIN control register  
0x50  
0
0
0
0
0
0
0
0
HF  
0
OTIE  
OT  
TXD  
0
LVSD  
UV  
EN  
0
W
R
LIN_SR (hi)  
LIN status register  
LIN_SR (lo)  
0
0
0x52  
0x53  
0x54  
0x55  
0x56  
W
R
Write 1 will clear the flags  
RDY  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
RX  
TX  
LIN status register  
LIN_TX  
W
R
0
0
0
0
0
FROMPT  
B
FROMSCI  
LIN transmit line definition  
LIN_RX  
W
R
0
TOPTB  
0
TOSCI  
0
LIN receive line definition  
W
R
0
Reserved  
Reserved  
W
R
0
0
0
0x57  
W
Notes  
213. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
214. This Register is 16-Bit access only.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
166/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.12.3.3 Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of the register bit and field function follow the register diagrams, in bit order.  
4.12.3.3.1  
LIN control register (LIN_CTL)  
Table 248. LIN control register (LIN_CTL)  
Offset  
Access: User write  
0x50  
(215) ,(216)  
15  
0
14  
0
13  
0
12  
11  
10  
0
9
0
8
R
W
0
0
0
OTIEM  
TXDM  
LVSDM  
ENM  
0
SRSM  
Reset  
0
7
0
6
0
0
5
0
0
4
0
3
0
1
0
0
2
R
W
OTIE  
0
TXD  
0
LVSD  
0
EN  
0
SRS  
Reset  
0
0
0
0
Notes  
215. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
216. This Register is 16-Bit access only.  
Table 249. LIN control register (LIN_CTL) - register field descriptions  
Field  
Description  
LIN Overtemperature Interrupt Enable - Mask  
0 - writing the OTIE Bit will have no effect  
1 - writing the OTIE Bit will be effective  
15  
OTIEM  
IN - Direct Transmitter Control - Mask  
0 - writing the TXD Bit will have no effect  
1 - writing the TXD Bit will be effective  
12  
TXDM  
LIN - Low Voltage Shutdown Disable (J2602 Compliance Control) - Mask  
0 - writing the LVSD Bit will have no effect  
1 - writing the LVSD Bit will be effective  
11  
LVSDM  
LIN Module Enable - Mask  
0 - writing the EN Bit will have no effect  
1 - writing the EN Bit will be effective  
10  
ENM  
LIN - Slew Rate Select - Mask  
00,01,10 - writing the SRS Bits will have no effect  
11 - writing the SRS Bits will be effective  
9-8  
SRSM[1:0]  
LIN Overtemperature Interrupt Enable  
0 - LIN overtemperature interrupt disabled  
1 - LIN overtemperature interrupt enabled  
7
OTIE  
IN - Direct Transmitter Control  
0 - Transmitter not controlled  
1 - Transmitter dominant  
4
TXD  
LIN - Low Voltage Shutdown Disable (J2602 Compliance Control)  
3
0 - LIN will be remain in recessive state in case of V  
undervoltage condition  
SUP  
LVSD  
1 - LIN will stay functional even with a V  
undervoltage condition  
SUP  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
167/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 249. LIN control register (LIN_CTL) - register field descriptions (continued)  
Field  
Description  
LIN Module Enable  
0 - LIN module disabled  
1 - LIN module enabled  
2
EN  
LIN - Slew Rate Select  
00 - Normal slew rate (20 kBit)  
01 - Slow slew rate (10.4 kBit)  
10 - Fast slew rate (100 kbit)  
11 - normal Slew Rate (20 kBit)  
1-0  
SRS[1:0]  
4.12.3.3.2  
LIN status register (LIN_SR (hi))  
Table 250. LIN status register (LIN_SR (hi))  
(217)  
Offset  
Access: User read/write  
0x52  
7
6
0
5
4
0
3
2
0
1
0
0
R
W
OT  
HF  
UV  
0
Write 1 will clear the flags  
Reset  
0
0
0
0
0
0
0
0
Notes  
217. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 251. LIN status register (LIN_SR (hi)) - register field descriptions  
Field  
Description  
LIN Overtemperature Status. This bit is latched and has to be reset by writing 1 into OT bit.  
0 - No LIN overtemperature condition detected  
1 - LIN overtemperature condition detected  
7
OT  
LIN HF (High Frequency) Condition Status indicating HF (DPI) disturbance in the LIN module. This bit is latched and has to be reset by  
writing 1 into HF bit.  
5
0 - No LIN HF (DPI) condition detected  
1 - LIN HF (DPI) condition detected  
HF  
LIN Undervoltage Status. This threshold is used for the J2602 feature as well. This bit is latched and has to be reset by writing 1 into  
UV bit.  
3
0 - No LIN undervoltage condition detected  
1 - LIN undervoltage condition detected  
UV  
4.12.3.3.3  
LIN status register (LIN_SR (lo))  
Table 252. LIN status register (LIN_SR (lo))  
(218)  
Offset  
Access: User read  
0x53  
7
6
0
5
0
4
0
3
0
2
0
1
0
R
RDY  
RX  
TX  
W
Notes  
218. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
168/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 253. LIN status register (LIN_SR (lo)) - register field descriptions  
Field  
Description  
Transmitter Ready Status  
0 - Transmitter not ready  
1 - Transmitter ready  
1
RDY  
Current RX status  
0 - Rx recessive  
1 - Rx dominant  
1
RX  
Current TX status  
0 - Tx recessive  
1 - Tx dominant  
0
TX  
4.12.3.3.4  
LIN transmit line definition (LIN_TX)  
Table 254. LIN transmit line definition (LIN_TX)  
(219)  
Offset  
Access: User read/write  
0x54  
7
6
5
4
3
2
1
0
R
0
0
0
0
0
0
FROMPTB  
FROMSCI  
W
Reset  
0
0
0
0
0
0
0
0
Notes  
219. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 255. LIN transmit line definition (LIN_TX) - register field descriptions  
Field  
Description  
(220)  
LIN_TX internally routed from PTB. See Section 4.11, “General purpose I/O - GPIO" for details.  
0 - LIN transmitter disconnected from PTB module.  
1
FROMPTB  
1 - LIN transmitter connected to the PTB module.  
(220)  
LIN_TX internally routed from SCI  
0
0 - LIN transmitter disconnected from SCI module.  
1 - LIN transmitter connected to the SCI module.  
FROMSCI  
Notes  
220. In case both, FROMPTB and FROMSCI are selected, the SCI has priority and the PTB signal is ignored. In any case, the signal is logically ORed  
with the TXD direct transmitter control.  
4.12.3.3.5  
LIN receive line definition (LIN_RX)  
Table 256. LIN receive line definition (LIN_RX)  
(221)  
Offset  
Access: User read/write  
1 0  
0x55  
7
0
6
0
5
0
4
0
3
0
2
0
R
W
TOPTB  
0
TOSCI  
0
Reset  
0
0
0
0
0
0
Notes  
221. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
169/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 257. LIN receive line definition (LIN_RX) - register field descriptions  
Field  
Description  
LIN_RX internally routed to PTB  
0 - LIN receiver disconnected from PTB module.  
1 - LIN receiver connected to the PTB module.  
1
TOPTB  
LIN_RX internally routed to SCI  
0 - LIN receiver disconnected from SCI module.  
1 - LIN receiver connected to the SCI module.  
0
TOSCI  
NOTE  
In order to route the RX signal to the Timer Input capture, one of the PTBx must be configured as a  
pass through.  
Figure 45. Definition of LIN bus timing parameters  
4.13 Serial communication interface (S08SCIV4)  
4.13.1 Introduction  
4.13.1.1 Features  
Features of SCI module include:  
Full-duplex, standard non-return-to-zero (NRZ) format  
Double-buffered transmitter and receiver with separate enables  
Programmable baud rates (13-bit modulo divider)  
Interrupt-driven or polled operation:  
Transmit data register empty and transmission complete  
Receive data register full  
Receive overrun, parity error, framing error, and noise error  
Idle receiver detect  
Active edge on receive pin  
Break detect supporting LIN  
Hardware parity generation and checking  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
170/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Programmable 8-bit or 9-bit character length  
Receiver wake-up by idle-line or address-mark  
Optional 13-bit break character generation / 11-bit break character detection  
Selectable transmitter output polarity  
4.13.1.2 Modes of operation  
See Section 4.13.3, “Functional description", for details concerning SCI operation in these modes:  
8- and 9-bit data modes  
Loop mode  
Single-wire mode  
4.13.1.3 Block diagram  
Figure 46 shows the transmitter portion of the SCI.  
INTERNAL BUS  
(WRITE-ONLY)  
SCID – Tx BUFFER  
LOOPS  
RSRC  
LOOP  
CONTROL  
TO RECEIVE  
DATA IN  
11-BIT TRANSMIT SHIFT REGISTER  
M
TO TxD  
H
8
7
6
5
4
3
2
1
0
L
1 BAUD  
RATE CLOCK  
SHIFT DIRECTION  
TXINV  
T8  
PE  
PARITY  
GENERATION  
PT  
SCI CONTROLS TxD  
TxD DIRECTION  
TE  
SBK  
TO TxD  
LOGIC  
TRANSMIT CONTROL  
TXDIR  
BRK13  
TDRE  
TIE  
Tx INTERRUPT  
REQUEST  
TC  
TCIE  
Figure 46. SCI transmitter block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
171/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Figure 47 shows the receiver portion of the SCI.  
INTERNAL BUS  
(READ-ONLY)  
SCID – Rx BUFFER  
16 BAUD  
RATE CLOCK  
DIVIDE  
BY 16  
FROM  
TRANSMITTER  
11-BIT RECEIVE SHIFT REGISTER  
LOOPS  
SINGLE-WIRE  
M
LOOP CONTROL  
RSRC  
LBKDE  
H
8
7
6
5
4
3
2
1
0
L
FROM RxD  
RXINV  
DATA RECOVERY  
SHIFT DIRECTION  
WAKEUP  
LOGIC  
ILT  
RWU  
RWUID  
ACTIVE EDGE  
DETECT  
RDRF  
RIE  
IDLE  
ILIE  
Rx INTERRUPT  
REQUEST  
LBKDIF  
LBKDIE  
RXEDGIF  
RXEDGIE  
OR  
ORIE  
FE  
FEIE  
ERROR INTERRUPT  
REQUEST  
NF  
NEIE  
PE  
PT  
PARITY  
CHECKING  
PF  
PEIE  
Figure 47. SCI receiver block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
172/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.13.2 Memory map and registers  
4.13.2.1 Overview  
This section provides a detailed description of the memory map and registers.  
4.13.2.2 Module memory map  
The memory map for the S08SCIV4 module is given in Table 63.  
Table 258. Module memory map  
(
Offset  
Name  
7
6
5
4
3
2
1
0
222)  
SCIBD (hi)  
SCI Baud Rate Register  
SCIBD (lo)  
R
W
R
LBKDIE  
RXEDGIE  
0
SBR12  
SBR11  
SBR10  
SBR9  
SBR8  
0x18  
0x19  
0x1A  
0x1B  
0x1C  
0x1D  
0x1E  
SBR7  
SBR6  
0
SBR5  
RSRC  
SBR4  
M
SBR3  
0
SBR2  
ILT  
SBR1  
PE  
SBR0  
PT  
SCI Baud Rate Register  
SCIC1  
W
R
LOOPS  
SCI Control Register 1  
SCIC2  
W
R
TIE  
TCIE  
TC  
RIE  
ILIE  
TE  
RE  
NF  
RWU  
FE  
SBK  
PF  
SCI Control Register 2  
SCIS1  
W
R
TDRE  
RDRF  
IDLE  
OR  
SCI Status Register 1  
SCIS2  
W
R
0
RAF  
LBKDIF  
R8  
RXEDGIF  
T8  
RXINV  
TXINV  
RWUID  
ORIE  
BRK13  
NEIE  
LBKDE  
FEIE  
SCI Status Register 2  
SCIC3  
W
R
TXDIR  
PEIE  
SCI Control Register 3  
SCID  
W
R
R7  
T7  
R6  
T6  
R5  
T5  
R4  
T4  
R3  
T3  
R2  
T2  
R1  
T1  
R0  
T0  
0x1F  
SCI Data Register  
W
Notes  
222. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.13.2.3 Register definition  
The SCI has eight 8-bit registers to control baud rate, select SCI options, report SCI status, and for transmit/receive data.  
4.13.2.3.1  
SCI baud rate registers (SCIBD (hi), SCIBD (lo))  
This pair of registers control the prescale divisor for SCI baud rate generation. To update the 13-bit baud rate setting [SBR12:SBR0], first  
write to SCIBD (hi) to buffer the high half of the new value, and then write to SCIBD (lo). The working value in SCIBD (hi) does not change  
until SCIBD (lo) is written.  
SCIBDL is reset to a non-zero value, so after reset the baud rate generator remains disabled until the first time the receiver or transmitter  
is enabled (RE or TE bits in SCIC2 are written to 1).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
173/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 259. SCI baud rate register (SCIBD (hi))  
(223)  
Offset  
Access: User read/write  
0x18  
7
6
RXEDGIE  
0
5
0
4
SBR12  
0
3
SBR11  
0
2
SBR10  
0
1
SBR9  
0
0
SBR8  
0
R
W
LBKDIE  
0
Reset  
0
= Unimplemented or Reserved  
Notes  
223. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 260. SCIBD (hi) field descriptions  
Field  
Description  
LIN Break Detect Interrupt Enable (for LBKDIF)  
7
0
1
Hardware interrupts from LBKDIF disabled (use polling).  
Hardware interrupt requested when LBKDIF flag is 1.  
LBKDIE  
RxD Input Active Edge Interrupt Enable (for RXEDGIF)  
6
0
1
Hardware interrupts from RXEDGIF disabled (use polling).  
Hardware interrupt requested when RXEDGIF flag is 1.  
RXEDGIE  
Baud Rate Modulo Divisor — The 13 bits in SBR[12:0] are referred to collectively as BR, and they set the modulo divide rate for the  
SCI baud rate generator. When BR = 0, the SCI baud rate generator is disabled to reduce supply current. When BR = 1 to 8191, the SCI  
baud rate = BUSCLK/(64BR). See BR bits in Table 261.  
4:0  
SBR[12:8]  
Table 261. SCI baud rate register (SCIBDL)  
(224)  
Offset  
Access: User read/write  
1 0  
0x19  
7
SBR7  
0
6
SBR6  
0
5
SBR5  
0
4
SBR4  
0
3
SBR3  
0
2
SBR2  
1
R
SBR1  
0
SBR0  
0
W
Reset  
Notes  
224. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 262. SCIBDL field descriptions  
Field  
Description  
Baud Rate Modulo Divisor — These 13 bits in SBR[12:0] are referred to collectively as BR, and they set the modulo divide rate for the  
SCI baud rate generator. When BR = 0, the SCI baud rate generator is disabled to reduce supply current. When BR = 1 to 8191, the SCI  
baud rate = BUSCLK/(64BR). See also BR bits in Table 259.  
7:0  
SBR[7:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
174/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.13.2.3.2  
SCI control register 1 (SCIC1)  
This read/write register is used to control various optional features of the SCI system.  
Table 263. SCI control register 1 (SCIC1)  
(225)  
Offset  
Access: User read/write  
1 0  
0x1A  
7
6
0
5
RSRC  
0
4
M
0
3
0
2
ILT  
0
R
W
LOOPS  
0
PE  
0
PT  
0
Reset  
0
0
Notes  
225. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 264. SCIC1 field descriptions  
Field  
Description  
Loop Mode Select — Selects between loop back modes and normal 2-pin full-duplex modes. When LOOPS = 1, the transmitter output  
is internally connected to the receiver input.  
7
0
1
Normal operation — RxD and TxD use separate pins.  
Loop mode or single-wire mode where transmitter outputs are internally connected to receiver input. (See RSRC bit.) RxD pin is not  
used by SCI.  
LOOPS  
Receiver Source Select — This bit has no meaning or effect unless the LOOPS bit is set to 1. When LOOPS = 1, the receiver input is  
internally connected to the TxD pin and RSRC determines whether this connection is also connected to the transmitter output.  
5
0
1
Provided LOOPS = 1, RSRC = 0 selects internal loop back mode and the SCI does not use the RxD pins.  
Single-wire SCI mode where the TxD pin is connected to the transmitter output and receiver input.  
RSRC  
9-Bit or 8-Bit Mode Select  
4
M
0
1
Normal — start + 8 data bits (LSB first) + stop.  
Receiver and transmitter use 9-bit data characters  
start + 8 data bits (LSB first) + 9th data bit + stop.  
Idle Line Type Select — Setting this bit to 1 ensures that the stop bit and logic 1 bits at the end of a character do not count toward the  
10 or 11 bit times of logic high level needed by the idle line detection logic. Refer to Section 4.13.3.3.2.1, “Idle-line wake-up" for more  
information.  
2
ILT  
0
1
Idle character bit count starts after start bit.  
Idle character bit count starts after stop bit.  
Parity Enable — Enables hardware parity generation and checking. When parity is enabled, the most significant bit (MSB) of the data  
character (eighth or ninth data bit) is treated as the parity bit.  
1
0
1
No hardware parity generation or checking.  
Parity enabled.  
PE  
Parity Type — Provided parity is enabled (PE = 1), this bit selects even or odd parity. Odd parity means the total number of 1s in the  
data character, including the parity bit, is odd. Even parity means the total number of 1s in the data character, including the parity bit, is  
even.  
0
PT  
0
1
Even parity.  
Odd parity.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
175/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.13.2.3.3  
SCI control register 2 (SCIC2)  
This register can be read or written at any time.  
Table 265. SCI control register 2 (SCIC2)  
(226)  
Offset  
Access: User read/write  
0x1B  
7
TIE  
0
6
TCIE  
0
5
RIE  
0
4
ILIE  
0
3
TE  
0
2
RE  
0
1
RWU  
0
0
SBK  
0
R
W
Reset  
Notes  
226. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 266. SCIC2 field descriptions  
Field  
Description  
Transmit Interrupt Enable (for TDRE)  
7
TIE  
0
1
Hardware interrupts from TDRE disabled (use polling).  
Hardware interrupt requested when TDRE flag is 1.  
Transmission Complete Interrupt Enable (for TC)  
6
0
1
Hardware interrupts from TC disabled (use polling).  
Hardware interrupt requested when TC flag is 1.  
TCIE  
Receiver Interrupt Enable (for RDRF)  
5
RIE  
0
1
Hardware interrupts from RDRF disabled (use polling).  
Hardware interrupt requested when RDRF flag is 1.  
Idle Line Interrupt Enable (for IDLE)  
4
ILIE  
0
1
Hardware interrupts from IDLE disabled (use polling).  
Hardware interrupt requested when IDLE flag is 1.  
Transmitter Enable  
0
1
Transmitter off.  
Transmitter on.  
TE must be 1 in order to use the SCI transmitter. When TE = 1, the SCI forces the TxD pin to act as an output for the SCI system.  
When the SCI is configured for single-wire operation (LOOPS = RSRC = 1), TXDIR controls the direction of traffic on the single SCI  
communication line (TxD pin).  
3
TE  
TE also can be used to queue an idle character by writing TE = 0 then TE = 1 while a transmission is in progress. Refer to  
Section 4.13.3.2.1, “Send break and queued idle" for more details.  
When TE is written to 0, the transmitter keeps control of the port TxD pin until any data, queued idle, or queued break character finishes  
transmitting before allowing the pin to revert to a general-purpose I/O pin.  
Receiver Enable — When the SCI receiver is off, the RxD pin reverts to being a general-purpose port I/O pin. If LOOPS = 1 the RxD pin  
reverts to being a general-purpose I/O pin even if RE = 1.  
2
0
1
Receiver off.  
Receiver on.  
RE  
Receiver Wake-up Control — This bit can be written to 1 to place the SCI receiver in a standby state where it waits for automatic  
hardware detection of a selected wake-up condition. The wake-up condition is either an idle line between messages (WAKE = 0, idle-line  
wake-up), or a logic 1 in the most significant data bit in a character (WAKE = 1, address-mark wake-up). Application software sets RWU  
and (normally) a selected hardware condition automatically clears RWU. Refer to Section 4.13.3.3.2, “Receiver wake-up operation" for  
more details.  
1
RWU  
0
1
Normal SCI receiver operation.  
SCI receiver in standby waiting for wake-up condition.  
Send Break — Writing a 1 and then a 0 to SBK queues a break character in the transmit data stream. Additional break characters of 10  
or 11 (13 or 14 if BRK13 = 1) bit times of logic 0 are queued as long as SBK = 1. Depending on the timing of the set and clear of SBK  
relative to the information currently being transmitted, a second break character may be queued before software clears SBK. Refer to  
Section 4.13.3.2.1, “Send break and queued idle" for more details.  
0
SBK  
0
1
Normal transmitter operation.  
Queue break character(s) to be sent.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
176/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.13.2.3.4  
SCI status register 1 (SCIS1)  
This register has eight read-only status flags. Writes have no effect. Special software sequences (which do not involve writing to this  
register) are used to clear these status flags.  
Table 267. SCI status register 1 (SCIS1)  
(227)  
Offset  
Access: User read/write  
1 0  
0x1C  
7
6
5
4
3
2
R
TDRE  
1
TC  
RDRF  
IDLE  
OR  
NF  
FE  
PF  
W
Reset  
1
0
0
0
0
0
0
= Unimplemented or Reserved  
Notes  
227. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 268. SCIS1 field descriptions  
Field  
Description  
Transmit Data Register Empty Flag — TDRE is set out of reset and when a transmit data value transfers from the transmit data buffer  
to the transmit shifter, leaving room for a new character in the buffer. To clear TDRE, read SCIS1 with TDRE = 1 and then write to the  
SCI data register (SCID).  
7
TDRE  
0
1
Transmit data register (buffer) full.  
Transmit data register (buffer) empty.  
Transmission Complete Flag — TC is set out of reset and when TDRE = 1 and no data, preamble, or break character is being  
transmitted.  
0
1
Transmitter active (sending data, a preamble, or a break).  
Transmitter idle (transmission activity complete).  
6
TC  
TC is cleared automatically by reading SCIS1 with TC = 1 and then doing one of the following three things:  
Write to the SCI data register (SCID) to transmit new data  
Queue a preamble by changing TE from 0 to 1  
Queue a break character by writing 1 to SBK in SCIC2  
Receive Data Register Full Flag — RDRF becomes set when a character transfers from the receive shifter into the receive data register  
(SCID). If the OR bit is set, further received characters are lost and RDRF bit does not set. To clear RDRF, read SCIS1 with RDRF = 1  
and then read the SCI data register (SCID).  
5
RDRF  
0
1
Receive data register empty.  
Receive data register full.  
Idle Line Flag — IDLE is set when the SCI receive line becomes idle for a full character time after a period of activity. When ILT = 0, the  
receiver starts counting idle bit times after the start bit. So if the receive character is all 1s, these bit times and the stop bit time count  
toward the full character time of logic high (10 or 11 bit times depending on the M control bit) needed for the receiver to detect an idle  
line. When ILT = 1, the receiver doesn’t start counting idle bit times until after the stop bit. So the stop bit and any logic high bit times at  
the end of the previous character do not count toward the full character time of logic high needed for the receiver to detect an idle line.  
4
To clear IDLE, read SCIS1 with IDLE = 1 and then read the SCI data register (SCID). After IDLE has been cleared, it cannot become set  
again until after a new character has been received and RDRF has been set. IDLE will get set only once even if the receive line remains  
idle for an extended period.  
IDLE  
0
1
No idle line detected.  
Idle line was detected.  
Receiver Overrun Flag — OR is set when a new serial character is ready to be transferred to the receive data register (buffer), but the  
previously received character has not been read from SCID yet. In this case, the new character (and all associated error information) is  
lost because there is no room to move it into SCID. To clear OR, read SCIS1 with OR = 1 and then read the SCI data register (SCID).  
3
OR  
0
1
No overrun.  
Receive overrun (new SCI data lost).  
Noise Flag — The advanced sampling technique used in the receiver takes seven samples during the start bit and three samples in each  
data bit and the stop bit. If any of these samples disagrees with the rest of the samples within any bit time in the frame, the flag NF will  
be set at the same time as the flag RDRF gets set for the character. To clear NF, read SCIS1 and then read the SCI data register (SCID).  
2
NF  
0
1
No noise detected.  
Noise detected in the received character in SCID.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
177/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 268. SCIS1 field descriptions (continued)  
Field  
Description  
Framing Error Flag — FE is set at the same time as RDRF when the receiver detects a logic 0 where the stop bit was expected. This  
suggests the receiver was not properly aligned to a character frame. To clear FE, read SCIS1 with FE = 1 and then read the SCI data  
register (SCID).  
1
FE  
0
1
No framing error detected. This does not guarantee the framing is correct.  
Framing error.  
Parity Error Flag — PF is set at the same time as RDRF when parity is enabled (PE = 1) and the parity bit in the received character  
does not agree with the expected parity value. To clear PF, read SCIS1 and then read the SCI data register (SCID).  
0
0
1
No parity error.  
Parity error.  
PF  
4.13.2.3.5  
SCI status register 2 (SCIS2)  
This register has one read-only status flag.  
Table 269. SCI status register 2 (SCIS2)  
(228)  
Offset  
Access: User read/write  
0x1D  
7
6
RXEDGIF  
0
5
0
4
RXINV  
0
3
RWUID  
0
2
BRK13  
0
1
0
R
W
RAF  
LBKDIF  
0
LBKDE  
0
Reset  
0
0
= Unimplemented or Reserved  
Notes  
228. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 270. SCIS2 field descriptions  
Field  
Description  
LIN Break Detect Interrupt Flag — LBKDIF is set when the LIN break detect circuitry is enabled and a LIN break character is detected.  
LBKDIF is cleared by writing a “1” to it.  
7
0
1
No LIN break character has been detected.  
LIN break character has been detected.  
LBKDIF  
RxD Pin Active Edge Interrupt Flag — RXEDGIF is set when an active edge (falling if RXINV = 0, rising if RXINV=1) on the RxD pin  
occurs. RXEDGIF is cleared by writing a “1” to it.  
6
0
1
No active edge on the receive pin has occurred.  
An active edge on the receive pin has occurred.  
RXEDGIF  
Receive Data Inversion — Setting this bit reverses the polarity of the received data input.  
4
0
1
Receive data not inverted  
Receive data inverted  
(229)  
RXINV  
Receive Wake Up Idle Detect— RWUID controls whether the idle character that wakes up the receiver sets the IDLE bit.  
3
0
1
During receive standby state (RWU = 1), the IDLE bit does not get set upon detection of an idle character.  
During receive standby state (RWU = 1), the IDLE bit gets set upon detection of an idle character.  
RWUID  
Break Character Generation Length — BRK13 is used to select a longer transmitted break character length. Detection of a framing  
error is not affected by the state of this bit.  
2
0
1
Break character is transmitted with length of 10 bit times (11 if M = 1)  
Break character is transmitted with length of 13 bit times (14 if M = 1)  
BRK13  
LIN Break Detection Enable— LBKDE is used to select a longer break character detection length. While LBKDE is set, framing error  
(FE) and receive data register full (RDRF) flags are prevented from setting.  
1
0
1
Break character detection enabled.  
Break character detection disabled.  
LBKDE  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
178/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 270. SCIS2 field descriptions (continued)  
Field  
Description  
Receiver Active Flag — RAF is set when the SCI receiver detects the beginning of a valid start bit, and RAF is cleared automatically  
when the receiver detects an idle line. This status flag can be used to check whether an SCI character is being received before instructing  
the MCU to go to stop mode.  
0
RAF  
0
1
SCI receiver idle waiting for a start bit.  
SCI receiver active (RxD input not idle).  
Notes  
229. Setting RXINV inverts the RxD input for all cases: data bits, start and stop bits, break, and idle.  
When using an internal oscillator in a LIN system, it is necessary to raise the break detection threshold by one bit time. Under the worst  
case timing conditions allowed in LIN, it is possible that a 0x00 data character can appear to be 10.26 bit times long at a slave which is  
running 14% faster than the master. This would trigger normal break detection circuitry, which is designed to detect a 10 bit break symbol.  
When the LBKDE bit is set, framing errors are inhibited and the break detection threshold changes from 10 bits to 11 bits, preventing false  
detection of a 0x00 data character as a LIN break symbol.  
4.13.2.3.6  
SCI control register 3 (SCIC3)  
Table 271. SCI control register 3 (SCIC3)  
(230)  
Offset  
Access: User read/write  
1 0  
0x1E  
7
6
T8  
0
5
TXDIR  
0
4
TXINV  
0
3
ORIE  
0
2
NEIE  
0
R
R8  
FEIE  
0
PEIE  
0
W
Reset  
0
= Unimplemented or Reserved  
Notes  
230. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 272. SCIC3 field descriptions  
Field  
Description  
Ninth Data Bit for Receiver — When the SCI is configured for 9-bit data (M = 1), R8 can be thought of as a ninth receive data bit to the  
left of the MSB of the buffered data in the SCID register. When reading 9-bit data, read R8 before reading SCID, because reading SCID  
completes automatic flag clearing sequences, which could allow R8 and SCID to be overwritten with new data.  
7
R8  
Ninth Data Bit for Transmitter — When the SCI is configured for 9-bit data (M = 1), T8 may be thought of as a ninth transmit data bit  
to the left of the MSB of the data in the SCID register. When writing 9-bit data, the entire 9-bit value is transferred to the SCI shift register  
after SCID is written, so T8 should be written (if it needs to change from its previous value) before SCID is written. If T8 does not need  
to change in the new value (such as when it is used to generate mark or space parity), it need not be written each time SCID is written.  
6
T8  
TxD Pin Direction in Single-wire Mode — When the SCI is configured for single-wire half-duplex operation (LOOPS = RSRC = 1), this  
bit determines the direction of data at the TxD pin.  
5
0
1
TxD pin is an input in single-wire mode.  
TxD pin is an output in single-wire mode.  
TXDIR  
Transmit Data Inversion — Setting this bit reverses the polarity of the transmitted data output.  
4
0
1
Transmit data not inverted  
Transmit data inverted  
(231)  
TXINV  
Overrun Interrupt Enable — This bit enables the overrun flag (OR) to generate hardware interrupt requests.  
3
0
1
OR interrupts disabled (use polling).  
Hardware interrupt requested when OR = 1.  
ORIE  
Noise Error Interrupt Enable — This bit enables the noise flag (NF) to generate hardware interrupt requests.  
2
0
1
NF interrupts disabled (use polling).  
Hardware interrupt requested when NF = 1.  
NEIE  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
179/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 272. SCIC3 field descriptions (continued)  
Field  
Description  
Framing Error Interrupt Enable — This bit enables the framing error flag (FE) to generate hardware interrupt requests.  
1
FEIE  
0
1
FE interrupts disabled (use polling).  
Hardware interrupt requested when FE = 1.  
Parity Error Interrupt Enable — This bit enables the parity error flag (PF) to generate hardware interrupt requests.  
0
0
1
PF interrupts disabled (use polling).  
Hardware interrupt requested when PF = 1.  
PEIE  
Notes  
231. Setting TXINV inverts the TxD output for all cases: data bits, start and stop bits, break, and idle.  
4.13.2.3.7  
SCI data register (SCID)  
This register is actually two separate registers. Reads return the contents of the read-only receive data buffer and writes go to the  
write-only transmit data buffer. Reads and writes of this register are also involved in the automatic flag clearing mechanisms for the SCI  
status flags.  
Table 273. SCI data register (SCID)  
(232)  
Offset  
Access: User read/write  
1 0  
0x1D  
7
R7  
T7  
0
6
R6  
T6  
0
5
R5  
T5  
0
4
R4  
T4  
0
3
R3  
T3  
0
2
R2  
T2  
0
R
R1  
T1  
0
R0  
T0  
0
W
Reset  
Notes  
232. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.13.3 Functional description  
The SCI allows full-duplex, asynchronous, NRZ serial communication among the MCU and remote devices, including other MCUs. The  
SCI comprises a baud rate generator, transmitter, and receiver block. The transmitter and receiver operate independently, although they  
use the same baud rate generator. During normal operation, the MCU monitors the status of the SCI, writes the data to be transmitted,  
and processes received data. The following describes each of the blocks of the SCI.  
4.13.3.1 Baud rate generation  
Figure 48 shows the clock source for the SCI baud rate generator is the D2D clock / 4.  
MODULO DIVIDE BY  
(1 THROUGH 8191)  
DIVIDE BY  
Tx BAUD RATE  
16  
D2D / 4  
SBR12:SBR0  
Rx SAMPLING CLOCK  
(16 BAUD RATE)  
BAUD RATE GENERATOR  
OFF IF [SBR12:SBR0] = 0  
D2DCLK / 4  
BAUD RATE =  
[SBR12:SBR0] 16  
Figure 48. SCI baud rate generation  
SCI communications require the transmitter and receiver (which typically derive baud rates from independent clock sources) to use the  
same baud rate. Allowed tolerance on this baud frequency depends on the details of how the receiver synchronizes to the leading edge  
of the start bit and how bit sampling is performed.  
The MCU resynchronizes to bit boundaries on every high-to-low transition, but in the worst case, there are no such transitions in the full  
10- or 11-bit time character frame so any mismatch in baud rate is accumulated for the whole character time. For a NXP Semiconductor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
180/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
SCI system whose bus frequency is driven by a crystal, the allowed baud rate mismatch is about ±4.5 percent for 8-bit data format and  
about ±4.0 percent for 9-bit data format. Although baud rate modulo divider settings do not always produce baud rates that exactly match  
standard rates, it is normally possible to get within a few percent, which is acceptable for reliable communications.  
4.13.3.2 Transmitter functional description  
This section describes the overall block diagram for the SCI transmitter, as well as specialized functions for sending break and idle  
characters. The transmitter block diagram is shown in Figure 46.  
The transmitter output (TxD) idle state defaults to logic high (TXINV = 0 following reset). The transmitter output is inverted by setting TXINV  
= 1. The transmitter is enabled by setting the TE bit in SCIC2. This queues a preamble character that is one full character frame of the  
idle state. The transmitter then remains idle until data is available in the transmit data buffer. Programs store data into the transmit data  
buffer by writing to the SCI data register (SCID).  
The central element of the SCI transmitter is the transmit shift register that is either 10 or 11 bits long depending on the setting in the M  
control bit. For the remainder of this section, we will assume M = 0, selecting the normal 8-bit data mode. In 8-bit data mode, the shift  
register holds a start bit, eight data bits, and a stop bit. When the transmit shift register is available for a new SCI character, the value  
waiting in the transmit data register is transferred to the shift register (synchronized with the baud rate clock) and the transmit data register  
empty (TDRE) status flag is set to indicate another character may be written to the transmit data buffer at SCID.  
If no new character is waiting in the transmit data buffer after a stop bit is shifted out the TxD pin, the transmitter sets the transmit complete  
flag and enters an idle mode, with TxD high, waiting for more characters to transmit.  
Writing 0 to TE does not immediately release the pin to be a general purpose I/O pin. Any transmit activity that is in progress must first be  
completed. This includes data characters in progress, queued idle characters, and queued break characters.  
4.13.3.2.1  
Send break and queued idle  
The SBK control bit in SCIC2 is used to send break characters which were originally used to gain the attention of old teletype receivers.  
Break characters are a full character time of logic 0 (10 bit times including the start and stop bits). A longer break of 13 bit times can be  
enabled by setting BRK13 = 1. Normally, a program would wait for TDRE to become set to indicate the last character of a message has  
moved to the transmit shifter, then write 1 and then write 0 to the SBK bit. This action queues a break character to be sent as soon as the  
shifter is available. If SBK is still 1 when the queued break moves into the shifter (synchronized to the baud rate clock), an additional break  
character is queued. If the receiving device is another NXP Semiconductor SCI, the break characters will be received as 0s in all eight  
data bits and a framing error (FE = 1) occurs.  
When idle-line wake-up is used, a full character time of idle (logic 1) is needed between messages to wake up any sleeping receivers.  
Normally, a program would wait for TDRE to become set to indicate the last character of a message has moved to the transmit shifter,  
then write 0 and then write 1 to the TE bit. This action queues an idle character to be sent as soon as the shifter is available. As long as  
the character in the shifter does not finish while TE = 0, the SCI transmitter never actually releases control of the TxD pin. If there is a  
possibility of the shifter finishing while TE = 0, set the general-purpose I/O controls so the pin that is shared with TxD is an output driving  
a logic 1. This ensures that the TxD line will look like a normal idle line even if the SCI loses control of the port pin between writing 0 and  
then 1 to TE. The length of the break character is affected by the BRK13 and M bits as shown in Table 274.  
Table 274. Break character length  
BRK13  
M
0
1
0
1
Break character length  
10 bit times  
0
0
1
1
11 bit times  
13 bit times  
14 bit times  
4.13.3.3 Receiver functional description  
In this section, the receiver block diagram (Figure 47) is used as a guide for the overall receiver functional description. The data sampling  
technique used to reconstruct receiver data is then described in more detail. Finally, two variations of the receiver wake-up function are  
explained.  
The receiver input is inverted by setting RXINV = 1. The receiver is enabled by setting the RE bit in SCIC2. Character frames consist of  
a start bit of logic 0, eight (or nine) data bits (LSB first), and a stop bit of logic 1. For information about 9-bit data mode, refer to  
Section 4.13.3.5.1, “8- and 9-bit data modes". For the remainder of this discussion, we assume the SCI is configured for normal 8-bit data  
mode.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
181/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
After receiving the stop bit into the receive shifter, and provided the receive data register is not already full, the data character is transferred  
to the receive data register and the receive data register full (RDRF) status flag is set. If RDRF was already set indicating the receive data  
register (buffer) was already full, the overrun (OR) status flag is set and the new data is lost. Because the SCI receiver is double-buffered,  
the program has one full character time after RDRF is set before the data in the receive data buffer must be read to avoid a receiver  
overrun.  
When a program detects that the receive data register is full (RDRF = 1), it gets the data from the receive data register by reading SCID.  
The RDRF flag is cleared automatically by a 2-step sequence which is normally satisfied in the course of the user’s program that handles  
receive data. Refer to Section 4.13.3.4, “Interrupts and status flags" for more details about flag clearing.  
4.13.3.3.1  
Data sampling technique  
The SCI receiver uses a 16baud rate clock for sampling. The receiver starts by taking logic level samples at 16 times the baud rate to  
search for a falling edge on the RxD serial data input pin. A falling edge is defined as a logic 0 sample after three consecutive logic 1  
samples. The 16baud rate clock is used to divide the bit time into 16 segments labeled RT1 through RT16. When a falling edge is  
located, three more samples are taken at RT3, RT5, and RT7 to make sure this was a real start bit and not merely noise. If at least two of  
these three samples are 0, the receiver assumes it is synchronized to a receive character.  
The receiver then samples each bit time, including the start and stop bits, at RT8, RT9, and RT10 to determine the logic level for that bit.  
The logic level is interpreted to be that of the majority of the samples taken during the bit time. In the case of the start bit, the bit is assumed  
to be 0 if at least two of the samples at RT3, RT5, and RT7 are 0 even if one or all of the samples taken at RT8, RT9, and RT10 are 1s.  
If any sample in any bit time (including the start and stop bits) in a character frame fails to agree with the logic level for that bit, the noise  
flag (NF) will be set when the received character is transferred to the receive data buffer.  
The falling edge detection logic continuously looks for falling edges, and if an edge is detected, the sample clock is resynchronized to bit  
times. This improves the reliability of the receiver in the presence of noise or mismatched baud rates. It does not improve worst case  
analysis because some characters do not have any extra falling edges anywhere in the character frame.  
In the case of a framing error, provided the received character was not a break character, the sampling logic that searches for a falling  
edge is filled with three logic 1 samples so that a new start bit can be detected almost immediately. The receiver is inhibited from receiving  
any new characters until the framing error flag is cleared. The receive shift register continues to function, but a complete character cannot  
transfer to the receive data buffer if FE is still set.  
4.13.3.3.2  
Receiver wake-up operation  
Receiver wake-up is a hardware mechanism that allows an SCI receiver to ignore the characters in a message that is intended for a  
different SCI receiver. In such a system, all receivers evaluate the first character(s) of each message, and as soon as they determine the  
message is intended for a different receiver, they write logic 1 to the receiver wake up (RWU) control bit in SCIC2. When RWU bit is set,  
the status flags associated with the receiver (with the exception of the idle bit, IDLE, when RWUID bit is set) are inhibited from setting,  
thus eliminating the software overhead for handling the unimportant message characters. At the end of a message, or at the beginning of  
the next message, all receivers automatically force RWU to 0 so all receivers wake up in time to look at the first character(s) of the next  
message.  
4.13.3.3.2.1 Idle-line wake-up  
When WAKE = 0, the receiver is configured for idle-line wake-up. In this mode, RWU is cleared automatically when the receiver detects  
a full character time of the idle-line level. The M control bit selects 8-bit or 9-bit data mode that determines how many bit times of idle are  
needed to constitute a full character time (10 or 11 bit times because of the start and stop bits).  
When RWU is one and RWUID is zero, the idle condition that wakes up the receiver does not set the IDLE flag. The receiver wakes up  
and waits for the first data character of the next message which will set the RDRF flag and generate an interrupt if enabled. When RWUID  
is one, any idle condition sets the IDLE flag and generates an interrupt if enabled, regardless of whether RWU is zero or one.  
The idle-line type (ILT) control bit selects one of two ways to detect an idle line. When ILT = 0, the idle bit counter starts after the start bit  
so the stop bit and any logic 1s at the end of a character count toward the full character time of idle. When ILT = 1, the idle bit counter  
does not start until after a stop bit time, so the idle detection is not affected by the data in the last character of the previous message.  
4.13.3.3.2.2 Address-mark wake-up  
When WAKE = 1, the receiver is configured for address-mark wake-up. In this mode, RWU is cleared automatically when the receiver  
detects a logic 1 in the most significant bit of a received character (eighth bit in M = 0 mode and ninth bit in M = 1 mode). Address-mark  
wake-up allows messages to contain idle characters but requires that the MSB be reserved for use in address frames. The logic 1 MSB  
of an address frame clears the RWU bit before the stop bit is received and sets the RDRF flag. In this case, the character with the MSB  
set is received even though the receiver was sleeping during most of this character time.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
182/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.13.3.4 Interrupts and status flags  
The SCI system has three separate interrupt vectors to reduce the amount of software needed to isolate the cause of the interrupt. One  
interrupt vector is associated with the transmitter for TDRE and TC events. Another interrupt vector is associated with the receiver for  
RDRF, IDLE, RXEDGIF, and LBKDIF events, and a third vector is used for OR, NF, FE, and PF error conditions. Each of these ten interrupt  
sources can be separately masked by local interrupt enable masks. The flags can still be polled by software when the local masks are  
cleared to disable generation of hardware interrupt requests.  
The SCI transmitter has two status flags that optionally can generate hardware interrupt requests. Transmit data register empty (TDRE)  
indicates when there is room in the transmit data buffer to write another transmit character to SCID. If the transmit interrupt enable (TIE)  
bit is set, a hardware interrupt will be requested whenever TDRE = 1. Transmit complete (TC) indicates that the transmitter is finished  
transmitting all data, preamble, and break characters and is idle with TxD at the inactive level. This flag is often used in systems with  
modems to determine when it is safe to turn off the modem. If the transmit complete interrupt enable (TCIE) bit is set, a hardware interrupt  
will be requested whenever TC = 1. Instead of hardware interrupts, software polling may be used to monitor the TDRE and TC status flags  
if the corresponding TIE or TCIE local interrupt masks are 0s.  
When a program detects that the receive data register is full (RDRF = 1), it gets the data from the receive data register by reading SCID.  
The RDRF flag is cleared by reading SCIS1 while RDRF = 1 and then reading SCID.  
When polling is used, this sequence is naturally satisfied in the normal course of the user program. If hardware interrupts are used, SCIS1  
must be read in the interrupt service routine (ISR). Normally, this is done in the ISR anyway to check for receive errors, so the sequence  
is automatically satisfied.  
The IDLE status flag includes logic that prevents it from getting set repeatedly when the RxD line remains idle for an extended period of  
time. IDLE is cleared by reading SCIS1 while IDLE = 1 and then reading SCID. After IDLE has been cleared, it cannot become set again  
until the receiver has received at least one new character and has set RDRF.  
If the associated error was detected in the received character that caused RDRF to be set, the error flags — noise flag (NF), framing error  
(FE), and parity error flag (PF) — get set at the same time as RDRF. These flags are not set in overrun cases.  
If RDRF was already set when a new character is ready to be transferred from the receive shifter to the receive data buffer, the overrun  
(OR) flag gets set instead the data along with any associated NF, FE, or PF condition is lost.  
At any time, an active edge on the RxD serial data input pin causes the RXEDGIF flag to set. The RXEDGIF flag is cleared by writing a  
“1” to it. This function does depend on the receiver being enabled (RE = 1).  
4.13.3.5 Additional SCI functions  
The following sections describe additional SCI functions.  
4.13.3.5.1  
8- and 9-bit data modes  
The SCI system (transmitter and receiver) can be configured to operate in 9-bit data mode by setting the M control bit in SCIC1. In 9-bit  
mode, there is a ninth data bit to the left of the MSB of the SCI data register. For the transmit data buffer, this bit is stored in T8 in SCIC3.  
For the receiver, the ninth bit is held in R8 in SCIC3.  
For coherent writes to the transmit data buffer, write to the T8 bit before writing to SCID.  
If the bit value to be transmitted as the ninth bit of a new character is the same as for the previous character, it is not necessary to write  
to T8 again. When data is transferred from the transmit data buffer to the transmit shifter, the value in T8 is copied at the same time data  
is transferred from SCID to the shifter.  
9-bit data mode typically is used in conjunction with parity to allow eight bits of data plus the parity in the ninth bit. Or it is used with  
address-mark wake-up so the ninth data bit can serve as the wake-up bit. In custom protocols, the ninth bit can also serve as a  
software-controlled marker.  
4.13.3.5.2  
Stop mode operation  
During all stop modes, clocks to the SCI module are halted. In stop1 and stop2 modes, all SCI register data is lost and must be re-initialized  
upon recovery from these two stop modes. No SCI module registers are affected in stop3 mode.  
The receive input active edge detect circuit is still active in stop3 mode, but not in stop2. An active edge on the receive input brings the  
CPU out of stop3 mode if the interrupt is not masked (RXEDGIE = 1).  
Note, because the clocks are halted, the SCI module will resume operation upon exit from stop (only in stop3 mode). Software should  
ensure stop mode is not entered while there is a character being transmitted out of or received into the SCI module.  
4.13.3.5.3  
Loop mode  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
183/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
When LOOPS = 1, the RSRC bit in the same register chooses between loop mode (RSRC = 0) or single-wire mode (RSRC = 1). Loop  
mode is sometimes used to check software, independent of connections in the external system, to help isolate system problems. In this  
mode, the transmitter output is internally connected to the receiver input and the RxD pin is not used by the SCI, so it reverts to a general  
purpose port I/O pin.  
4.13.3.5.4  
Single-wire operation  
When LOOPS = 1, the RSRC bit in the same register chooses between loop mode (RSRC = 0) or single-wire mode (RSRC = 1).  
Single-wire mode is used to implement a half-duplex serial connection. The receiver is internally connected to the transmitter output and  
to the TxD pin. The RxD pin is not used and reverts to a general-purpose port I/O pin.  
In single-wire mode, the TXDIR bit in SCIC3 controls the direction of serial data on the TxD pin. When TXDIR = 0, the TxD pin is an input  
to the SCI receiver and the transmitter is temporarily disconnected from the TxD pin so an external device can send serial data to the  
receiver. When TXDIR = 1, the TxD pin is an output driven by the transmitter. In single-wire mode, the internal loop back connection from  
the transmitter to the receiver causes the receiver to receive characters that are sent out by the transmitter.  
4.14 Life time counter (LTC)  
4.14.1 Introduction  
The Life Time Counter is implemented as flexible counter running in both, low power (STOP and SLEEP) and normal modes.  
It is based on the ALFCLK clock featuring IRQ and Wake Up capabilities on the Life Time Counter Overflow. The Wake Up on overflow  
would be indicated in the PCR_SR register WULTCF bit. The Life Time Counter must be set in Normal mode. The Life Time Counter is  
an up counter.  
4.14.2 Memory map and registers  
4.14.2.1 Overview  
This section provides a detailed description of the memory map and registers.  
4.14.2.2 Module memory map  
The memory map for the LTC module is in Table 63  
Table 275. Module memory map  
(233)  
Offset  
Name  
7
0
6
5
4
3
2
1
0
0
LTC_CTL (hi)  
R
W
R
0
0
0
0
0
0
0x38  
Life Time Counter control register  
LTC_CTL (lo)  
LTCIEM  
LTCEM  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x39  
0x3A  
0x3B  
LTCIE  
LTCE  
0
Life Time Counter control register  
LTC_SR  
W
R
LTCOF  
1 = clear  
0
Life Time Counter status register  
W
R
0
Reserved  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
184/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 275. Module memory map (continued)  
(233)  
Offset  
Name  
7
6
5
4
3
2
1
0
R
W
R
LTC_CNT1  
Life Time Counter Register  
0x3C  
W
R
LTC[31:0]  
W
R
LTC_CNT0  
Life Time Counter Register  
0x3E  
W
Notes  
233. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
4.14.2.3 Register descriptions  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.14.2.3.1  
Life time counter control register (LTC_CTL (hi))  
Table 276. Life time counter control register (LTC_CTL (hi))  
(234)  
Offset  
Access: User write  
0x38  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
0
LTCEM  
0
LTCIEM  
0
Reset  
0
0
0
0
0
0
Notes  
234. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 277. Life time counter control register (LTC_CTL (hi)) - register field descriptions  
Field  
Description  
Life Time Counter Enable Mask  
0 - writing the LTCE Bit will have no effect  
1 - writing the LTCE Bit will be effective  
0
LTCEM  
Life Time Counter Interrupt Enable Mask  
0 - writing the LTCIE Bit will have no effect  
1 - writing the LTCIE Bit will be effective  
7
LTCIEM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
185/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.14.2.3.2  
Life time counter control register (LTC_CTL (lo))  
Table 278. Life time counter control register (LTC_CTL (lo))  
(235)  
Offset  
Access: User read/write  
0x39  
7
LTCIE  
0
6
0
5
0
4
0
3
0
2
0
1
0
0
LTCE  
0
R
W
Reset  
0
0
0
0
0
0
Notes  
235. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 279. Life time counter control register (LTC_CTL (lo)) - register field descriptions  
Field  
Description  
Life Time Counter Enable  
0
1 - Life time counter module enabled. Counter will be incremented with based on the ALFCLK frequency.  
0 - Life time counter module disabled. Counter content will remain.  
LTCE  
(236)  
Life Time Counter Interrupt Enable  
1 - Life time counter overflow will generate an interrupt request.  
0 - Life time counter overflow will not generate an interrupt request.  
7
LTCIE  
Notes  
236. The first period after enable might be shorted due to the asynchronous clocks.  
4.14.2.3.3  
Life time counter status register (LTC_SR)  
Table 280. Life time counter status register (LTC_SR)  
(237)  
Offset  
Access: User read/write  
0x3A  
7
6
5
4
3
2
1
0
R
LTCOF  
0
0
0
0
0
0
0
0
W
Reset  
Notes  
0
0
0
0
0
0
0
237. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 281. Life time counter status register (LTC_SR) - register field descriptions  
Field  
Description  
Life Time Counter Overflow Flag. Writing 1 will clear the flag.  
1 - Life time counter overflow detected.  
0 - No life time counter overflow since last clear  
0
LTCOF  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
186/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.14.2.3.4  
Life time counter register (LTC_CNT1, LTC_CNT0)  
Table 282. Life time counter register (LTC_CNT1, LTC_CNT0)  
Offset  
Access: User read/write  
0x3C, 0x3E  
7
(238),(239)  
6
5
4
3
2
1
0
R
W
LTC[31:16]  
LTC[15:0]  
R
W
R
W
R
W
Reset  
0
0
0
0
0
0
0
0
Notes  
238. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
239. Those Registers are 16-Bit access only.  
Table 283. Life time counter register (LTC_CNT1, LTC_CNT0) - register field descriptions  
Field  
Description  
Life Time Counter Register  
The two 16-Bit words of the 32-Bit Life Time Counter register represent the current counter status. Whenever the microcontroller  
performs a reading operation on one of the 16Bit registers, the Life Time Counter is stopped until the remaining 16-Bit register is read,  
to prevent loss of information. After the second part is read, the LTC continues automatically.  
0-31  
LTC[31:0]  
Write operations should be performed with the Life Time Counter disabled to prevent a loss of data.  
4.15 Die to die interface - target  
The D2D Interface is the bus interface to the Microcontroller. Access to the MM912_637 analog die is controlled by the D2D Interface  
module. This section describes the functionality of the die-to-die target block (D2D).  
4.15.1 Overview  
The D2D is the target for a data transfer from the target to the initiator (MCU). The initiator provides a set of configuration registers and  
two memory mapped 256 Byte address windows. When writing to a window a transaction is initiated sending a write command, followed  
by an 8-bit address and the data byte or word is received from the initiator. When reading from a window a transaction is received with  
the read command, followed by an 8-bit address. The target then responds with the data. The basic idea is that a peripheral located on  
the MM912_637 analog die, can be addressed like an on-chip peripheral.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
187/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Internal Read Data Bus  
Internal Write Data Bus  
Internal Address Bus  
D2DCLK  
Command,  
Address and  
Data Buffer  
Internal Interrupt signal (INT)  
Internal  
Interrupt  
Sources  
Figure 49. Die to die interface  
Features:  
software transparent register access to peripherals on the MM912_637 analog die  
256 Byte address window  
supports blocking read or write as well as non-blocking write transactions  
8 bit physical bus width  
automatic synchronization of the target when initiator starts driving the interface clock  
generates transaction and error status as well as EOT acknowledge  
providing single interrupt interface to D2D Initiator  
4.15.2 Low power mode operation  
The D2D module is disabled in SLEEP and STOP mode. In Stop mode, the D2DINT signal is used to wake-up a powered down MCU after  
re-enabling the D2D interface. As the MCU could wake-up without the MM912_637 analog die, a special command will be recognized as  
wake-up event during Stop mode. See Section 4.3, “Analog die - power, clock and resets - PCR".  
4.15.2.1 Normal mode  
While in Normal, D2DCLK acts as an input only with pull present. D2D[7:0] operates as input/output with pull-down always present.  
D2DINT acts as an output only.  
4.15.2.2 Sleep mode/stop mode  
While in Sleep mode, all Interface data pins are pulled down to DGND to reduce power consumption.  
4.16 Embedded microcontroller - overview  
4.16.1 Introduction  
The S12 Central Processing Unit (CPU) offers 128 kB of Flash memory and 6.0 kB of system SRAM, up to eight general purpose I/Os,  
an on-chip oscillator and clock multiplier, one Serial Peripheral Interface (SPI), an interrupt module, and debug capabilities via the on-chip  
debug module (DBG), in combination with the Background Debug mode (BDM) interface. Additionally, there is a die-to-die initiator (D2DI)  
which represents the communication interface to the companion (analog) die.  
4.16.2 Features  
This section describes the key features of the MM912_637 micro controller die.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
188/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.16.2.1 Chip-level features  
On-chip modules available within the family include the following features:  
S12 CPU core (CPU12_V1)  
128 kByte on-chip flash with ECC  
4.0 kbyte on-chip data flash with ECC  
6.0 kbyte on-chip SRAM  
Phase locked loop (IPLL) frequency multiplier with internal filter  
4.0–16 MHz amplitude controlled Pierce oscillator  
1.024 MHz internal RC oscillator  
One serial peripheral interface (SPI) module  
On-chip voltage regulator (VREG) for regulation of input supply and all internal voltages  
Die to Die Initiator (D2DI)  
4.16.3 Module features  
The following sections provide more details of the modules implemented on the MC9S12I128.  
4.16.3.1 S12 16-bit central processor unit (CPU)  
S12 CPU is a high-speed 16-bit processing unit:  
Full 16-bit data paths supports efficient arithmetic operation and high speed math execution  
Includes many single-byte instructions. This allows much more efficient use of ROM space  
Extensive set of indexed addressing capabilities, including:  
Using the stack pointer as an indexing register in all indexed operations  
Using the program counter as an indexing register in all but auto increment/decrement mode  
Accumulator offsets using A, B, or D accumulators  
Automatic index predecrement, preincrement, postdecrement, and postincrement (by –8 to +8)  
4.16.3.2 On-chip flash with ECC  
On-chip flash memory on the MM912_637 features the following:  
128 kbyte of program flash memory  
32 data bits plus 7 syndrome ECC (Error Correction Code) bits allow single bit error correction and double fault detection  
Erase sector size 512 bytes  
Automated program and erase algorithm  
User margin level setting for reads  
Protection scheme to prevent accidental program or erase  
4.0 kbyte data flash memory  
16 data bits plus 6 syndrome ECC (Error Correction Code) bits allow single bit error correction and double-bit error detection  
Erase sector size 256 bytes  
Automated program and erase algorithm  
User margin level setting for reads  
4.16.3.3 On-chip SRAM  
6.0 kBytes of general purpose RAM  
4.16.3.4 Main external oscillator (XOSC)  
Loop controlled Pierce oscillator using a 4.0 MHz to 16 MHz crystal or resonator  
Current gain control on amplitude output  
Signal with low harmonic distortion  
Low power  
Good noise immunity  
Eliminates need for external current limiting resistor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
189/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Transconductance sized for optimum start-up margin for typical crystals  
4.16.3.5 Internal RC oscillator (IRC)  
Trimmable internal reference clock  
Frequency: 1.024 MHz  
4.16.3.6 Internal phase-locked-loop (IPLL)  
Phase-locked-loop clock frequency multiplier  
No external components required  
Reference divider and multiplier allow large variety of clock rates  
Automatic bandwidth control mode for low-jitter operation  
Automatic frequency lock detector  
Configurable option to spread spectrum for reduced EMC radiation (frequency modulation)  
Reference clock sources:  
External 4.0–16 MHz resonator/crystal (XOSC)  
Internal 1.024 MHz RC oscillator (IRC)  
4.16.3.7 System integrity support  
Power-on reset (POR)  
System reset generation  
Illegal address detection with reset  
Low voltage detection with interrupt or reset  
Real time interrupt (RTI)  
Computer operating properly (COP) watchdog  
Configurable as window COP for enhanced failure detection  
Initialized out of reset using option bits located in flash memory  
Clock monitor supervising the correct function of the oscillator  
4.16.3.8 Serial peripheral interface module (SPI)  
Configurable 8- or 16-bit data size  
Full duplex or single-wire bidirectional  
Double buffered transmit and receive  
Master or slave mode  
MSB-first or LSB-first shifting  
Serial clock phase and polarity options  
4.16.3.9 On-chip voltage regulator (VREG)  
Linear voltage regulator with bandgap reference  
Low voltage detect (LVD) with low voltage interrupt (LVI)  
Power-on reset (POR) circuit  
Low voltage reset (LVR)  
4.16.3.10 Background debug (BDM)  
Non-intrusive memory access commands  
Supports in-circuit programming of on-chip nonvolatile memory  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
190/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.16.3.11 Debugger (DBG)  
Trace buffer with depth of 64 entries  
Three comparators (A, B and C)  
Comparator A compares the full address bus and full 16-bit data bus  
Exact address or address range comparisons  
Two types of comparator matches  
Tagged: This matches just before a specific instruction begins execution  
Force: This is valid on the first instruction boundary after a match occurs  
Four trace modes  
Four stage state sequencer  
4.16.3.12 Die to die initiator (D2DI)  
Up to 2.0 Mbyte/s data rate  
Configurable 4-bit or 8-bit wide data path  
4.16.4 Block diagram  
Figure 50 shows a block diagram of the MC9S12I128 device.  
D2D0  
D2D1  
D2D2  
D2D3  
D2D4  
D2D5  
D2D6  
D2D7  
PD0  
PD1  
PD2  
PD3  
PD4  
PD5  
PD6  
PD7  
Die-to-Die Initiator  
128 k bytes Flash with ECC  
6.0 k bytes RAM  
selectable 4 or 8 bit wide  
4.0 k bytes Dataflash with ECC  
Voltage Regulator  
Input: 3.13 V … 5.5 V  
Outputs: 1.8 V core and 2.7 Flash  
D2DCLK  
D2DINT  
PC0  
PC1  
CPU12-V1  
MISO  
MOSI  
SCK  
SS  
PA0  
PA1  
SPI  
Debug Module  
PA2  
PA3  
PA4  
PA5  
PA6  
PA7  
3 address breakpoints  
1 data breakpoints  
Single-wire Background  
Debug Module  
Synchronous Serial IF  
BKGD  
64 Byte Trace Buffer  
Clock Monitor  
COP Watchdog  
Periodic Interrupt  
.
Amplitude  
Controlled  
Low Power  
PE0  
PE1  
EXTAL  
XTAL  
Power Supply:  
PLL with Frequency  
Modulation option  
VDDRX, VSSRX: 3.13 V …5.5V  
for Regulator Input, Port A, Port E, BKGD, TEST  
RESET  
TEST  
and RESET  
VDDD2D, VSSD2D: 2.5 V for Ports C and D  
Reset Generation  
and Test Entry  
Interrupt Module  
Figure 50. MC9S12I128 block diagram  
4.16.5 Device memory map  
Table 284 shows the device register memory map.  
Table 284. Device register memory map  
Address  
Module  
Size (Bytes)  
0x0000–0x0009  
0x000A–0x000B  
0x000C–0x000D  
0x000E–0x000F  
0x0010–0x0015  
PIM (port integration module)  
MMC (memory map control)  
PIM (port integration module)  
Reserved  
10  
2
2
2
MMC (memory map control)  
8
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
191/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 284. Device register memory map (continued)  
Address  
Module  
Size (Bytes)  
0x0016–0x0019  
0x001A–0x001B  
0x001C–0x001E  
0x001F  
Reserved  
2
2
Device ID register  
Reserved  
4
INT (interrupt module)  
DBG (debug module)  
Reserved  
1
0x0020–0x002F  
0x0030–0x0033  
0x0034–0x003F  
0x0040–0x00D7  
0x00D8–0x00DF  
0x00E0–0x00E7  
0x00E8–0x00EF  
0x00F0–0x00FF  
0x0100–0x0113  
0x0114–0x011F  
0x0120–0x017F  
0x0180–0x01EF  
0x01F0–0x01FC  
0x01FD–0x01FF  
0x0200-0x02FF  
0x0300–0x03FF  
16  
4
CPMU (clock and power management)  
Reserved  
12  
152  
8
D2DI (die 2 die initiator)  
Reserved  
32  
8
SPI (serial peripheral interface)  
Reserved  
32  
20  
12  
96  
112  
13  
3
FTMRC control registers  
Reserved  
PIM (port integration module)  
Reserved  
CPMU (clock and power management)  
Reserved  
D2DI (die 2 die initiator, blocking access window)  
D2DI (die 2 die initiator, non-blocking write window)  
256  
256  
NOTE  
Reserved register space shown in Table 284 is not allocated to any module. This register space is  
reserved for future use. Writing to these locations have no effect. Read access to these locations  
returns zero.  
Figure 51 shows MM912_637 CPU and BDM local address translation to the global memory map. It indicates also the location of the  
internal resources in the memory map. The whole 256 k global memory space is visible through the P-Flash window located in the 64 k  
local memory map located at 0x8000 - 0xBFFF using the PPAGE register.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
192/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
CPU and BDM  
Global Memory Map  
Local Memory Map  
0x0000  
0x0_0000  
Registers  
Registers  
0x0400  
Unimplemented  
D-Flash 4K Bytes  
0x0_2800  
RAM 6K  
0x1400  
Unpaged P-Flash  
Page 0x0C  
0x0_4000  
NVM Resources  
0x2800  
0x4000  
0x0_4400  
D-Flash  
RAM 6K Bytes  
0x0_5400  
NVM Resources  
0x0_8000  
Unimplemented  
Unpaged P-Flash  
Page 0x0D  
0x2_0000  
P-Flash  
4* 16K Pages  
0x8000  
0x3_0000  
Unpaged P-Flash  
0 0 0 0 P3P2P1P0  
PPAGE  
P-Flash window  
0x3_4000  
0xC000  
Unpaged P-Flash  
0x3_8000  
Unpaged P-Flash  
Page 0x0F  
0x3_C000  
0xFFFF  
Unpaged P-Flash  
0x3_FFFF  
Figure 51. MC9S12I128 global memory map  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
193/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.16.6 Part ID assignments  
The part ID is located in two 8-bit registers PARTIDH and PARTIDL (addresses 0x001A and 0x001B). The read-only value is a unique  
part ID for each revision of the chip. Table 285 shows the assigned part ID number and Mask Set number.  
The Version ID in Table 285 is a word located in a flash information row. The version ID number indicates a specific version of internal  
NVM controller.  
Table 285. Assigned part ID numbers  
(240)  
Device  
Mask set number  
Part ID  
Version ID  
MM912_637  
0M96X  
0x3880  
0x0000  
Notes  
240. The coding is as follows:  
Bit 15-12: Major family identifier  
Bit 11-6: Minor family identifier  
Bit 5-4: Major mask set revision number including FAB transfers   
Bit 3-0: Minor — non full — mask set revision  
4.16.7 System clock description  
Refer to Section 4.23, “S12 clock, reset, and power management unit (9S12I128PIMV1)" for the system clock description.  
4.16.8 Modes of operation  
The MCU can operate in different modes. These are described in Section 4.16.8.1, “Chip configuration summary".  
The MCU can operate in different power modes to facilitate power saving when full system performance is not required. These are  
described in Section 4.16.8.2, “Low power operation". Some modules feature a software programmable option to freeze the module status  
while the background debug module is active to facilitate debugging.  
4.16.8.1 Chip configuration summary  
The different modes and the security state of the MCU affect the debug features (enabled or disabled). The operating mode out of reset  
is determined by the state of the MODC signal during reset (see Table 286). The MODC bit in the MODE register shows the current  
operating mode and provides limited mode switching during operation. The state of the MODC signal is latched into this bit on the rising  
edge of RESET.  
Table 286. Chip modes  
Chip modes  
Normal single chip  
Special single chip  
MODC  
1
0
4.16.8.1.1  
Normal single-chip mode  
This mode is intended for normal device operation. The opcode from the on-chip memory is being executed after reset (requires the reset  
vector to be programmed correctly). The processor program is executed from internal memory.  
4.16.8.1.2  
Special single-chip mode  
This mode is used for debugging single-chip operation, boot-strapping, or security related operations. The background debug module  
BDM is active in this mode. The CPU executes a monitor program located in an on-chip ROM. BDM firmware waits for additional serial  
commands through the BKGD pin.  
4.16.8.2 Low power operation  
The MM912_637 has two static low-power modes Pseudo Stop and Stop mode. For a detailed description refer to the S12CPMU section.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
194/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.16.9 Security  
The MCU security mechanism prevents unauthorized access to the Flash memory. Refer to Section 4.21, “MCU - security  
(S12XS9S12I128PIMV1V2)", Section 4.22.4.1, “Security", and Section 4.25.5, “Security".  
4.16.10 Resets and interrupts  
Consult the S12 CPU manual and the S12SINT section for information on exception processing.  
4.16.10.1 Resets  
Table 287 lists all Reset sources and the vector locations. Resets are explained in detail in Section 4.23, “S12 clock, reset, and power  
management unit (9S12I128PIMV1)".  
Table 287. Reset sources and vector locations  
Vector address  
$FFFE  
Reset source  
Power-On Reset (POR)  
Low Voltage Reset (LVR)  
External pin RESET  
Illegal Address Reset  
Clock monitor reset  
CCR mask  
None  
Local enable  
None  
$FFFE  
None  
None  
None  
$FFFE  
None  
$FFFE  
None  
None  
$FFFC  
None  
OSCE Bit in CPMUOSC register  
CR[2:0] in CPMUCOP register  
$FFFA  
COP watchdog reset  
None  
4.16.10.2 Interrupt vectors  
Table 288 lists all interrupt sources and vectors in the default order of priority. The interrupt module (see Section 4.18, “MCU - interrupt  
module (S12S9S12I128PIMV1V1)") provides an interrupt vector base register (IVBR) to relocate the vectors.  
Table 288. Interrupt vector locations (Sheet 2 of 2)  
CCR  
Wake-up  
Wake-up  
from WAIT  
(241)  
Vector Address  
Interrupt Source  
Local Enable  
Mask  
from STOP  
Vector base + $F8  
Vector base+ $F6  
Vector base+ $F4  
Vector base+ $F2  
Vector base+ $F0  
Unimplemented instruction trap  
SWI  
None  
None  
X Bit  
I bit  
None  
None  
-
-
-
-
D2DI Error Interrupt  
D2DI External Interrupt  
RTI timeout interrupt  
None  
Yes  
Yes  
Yes  
Yes  
D2DCTL (D2DIE)  
CPMUINT (RTIE)  
I bit  
3.22.6 Interrupts  
Vector base + $EE  
to  
Reserved  
Vector base + $DA  
Vector base + $D8  
SPI  
I bit  
SPICR1 (SPIE, SPTIE)  
No  
Yes  
Vector base + $D6  
to  
Reserved  
Vector base + $CA  
Vector base + $C8  
Vector base + $C6  
Oscillator status interrupt  
PLL lock interrupt  
I bit  
I bit  
CPMUINT (OSCIE)  
CPMUINT (LOCKIE)  
No  
No  
No  
No  
Vector base + $C4  
to  
Reserved  
Vector base + $BC  
Vector base + $BA  
FLASH error  
I bit  
FERCNFG (SFDIE, DFDIE)  
No  
No  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
195/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 288. Interrupt vector locations (Sheet 2 of 2)  
CCR  
Wake-up  
Wake-up  
from WAIT  
(241)  
Vector Address  
Interrupt Source  
Local Enable  
Mask  
from STOP  
Vector base + $B8  
FLASH command  
I bit  
I bit  
FCNFG (CCIE)  
No  
No  
-
Yes  
Yes  
-
Vector base + $B6  
to  
Vector base + $8C  
Reserved  
Vector base + $8A  
Low-voltage interrupt (LVI)  
Spurious interrupt  
CPMUCTRL (LVIE)  
Vector base + $88  
to  
Vector base + $82  
Reserved  
Vector base + $80  
None  
Notes  
241. 16-bit vector address based  
4.16.10.3 Effects of reset  
When a reset occurs, MCU registers and control bits are initialized. Refer to the respective block sections for register reset states. On  
each reset, the Flash module executes a reset sequence to load Flash configuration registers.  
4.16.10.3.1 Flash configuration reset sequence phase  
The Flash module will hold CPU on each reset activity while loading Flash module registers from the Flash memory. If double faults are  
detected in the reset phase, Flash module protection and security may be active on leaving reset. This is explained in more detail in the  
Flash module, Section 4.25.6, “Initialization".  
4.16.10.3.2 Reset while flash command active  
If a reset occurs while any Flash command is in progress, that command will be immediately aborted. The state of the word being  
programmed or the sector/block being erased is not guaranteed.  
4.16.10.3.3 I/O pins  
Refer to the PIM section for reset configurations of all peripheral module ports.  
4.16.10.3.4 Memory  
The RAM arrays are not initialized out of reset.  
4.16.11 COP configuration  
The COP timeout rate bits CR[2:0] and the WCOP bit in the CPMUCOP register at address 0x003C are loaded from the Flash register  
FOPT. See Table 289 and Table 290 for coding. The FOPT register is loaded from the Flash configuration field byte at global address  
0x3_FF0E during the reset sequence.  
Table 289. Initial COP rate configuration  
NV[2:0] in FOPT register  
CR[2:0] in COPCTL register  
000  
001  
010  
011  
100  
111  
110  
101  
100  
011  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
196/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 289. Initial COP rate configuration (continued)  
NV[2:0] in FOPT register  
CR[2:0] in COPCTL register  
101  
110  
111  
010  
001  
000  
Table 290. Initial WCOP configuration  
NV[3] in FOPT register  
WCOP in COPCTL register  
1
0
0
1
4.17 MCU - port integration module (9S12I128PIMV1)  
4.17.1 Introduction  
The Port Integration Module (PIM) establishes the interface between the S12I128 peripheral modules SPI and Die-To-Die Interface  
module (D2DI) to the I/O pins of the MCU. All port A and port E pins support general purpose I/O functionality, if not in use with other  
functions. The PIM controls the signal prioritization and multiplexing on shared pins.  
4.17.1.1 Overview  
Figure 52 is a block diagram of the Port Integration Module.  
D2DCLK  
D2DINT  
PC0  
PC1  
D2DI  
D2DDAT0  
D2DDAT1  
D2DDAT2  
D2DDAT3  
D2DDAT4  
D2DDAT5  
D2DDAT6  
D2DDAT7  
PD0  
PD1  
PD2  
PD3  
PD4  
PD5  
PD6  
PD7  
Die-to-Die IF  
CPMU OSC  
EXTAL  
XTAL  
PE0  
PE1  
MISO  
MOSI  
SCK  
PA0  
PA1  
PA2  
PA3  
PA4  
PA5  
SPI  
Synchronous Serial IF  
SS  
PA6  
PA7  
Figure 52. Port integration module - block diagram  
4.17.1.2 Features  
8-pin port A associated with the SPI module  
2-pin port C used as D2DI clock output and D2DI interrupt input  
8-pin port D used as 8 or 4 bit data I/O for the D2DI module  
2-pin port E associated with the CPMU OSC module  
GPIO function shared on port A and E pins  
Pull-down devices on PC1 and PD7-0 if used as D2DI inputs  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
197/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Reduced drive capability on PC0 and PD7-0 on per pin basis  
The Port Integration Module includes these distinctive registers:  
Data registers for ports A and E when used as general purpose I/O  
Data direction registers for ports A and E when used as general purpose I/O  
Port input register on ports A and E  
Reduced drive register on port C and D  
4.17.2 External signal description  
This section lists and describes the signals that do connect off-chip. Table 291 shows all the pins and their functions that are controlled  
by the Port Integration Module.  
NOTE  
If there is more than one function associated with a pin, the priority is indicated by the position in the  
table from top (highest priority) to bottom (lowest priority).  
Table 291. Pin functions and priorities  
Pin function &  
priority  
Pin function  
after reset  
Port  
Pin name  
I/O  
Description  
PA7  
PA6  
PA5  
PA4  
GPIO  
GPIO  
GPIO  
GPIO  
I/O General-purpose I/O  
I/O General-purpose I/O  
I/O General-purpose I/O  
I/O General-purpose I/O  
Serial Peripheral Interface 0 slave select output in master mode, input in  
slave or master mode  
SS  
I/O  
PA3  
GPIO  
SCK  
I/O General-purpose I/O  
A
GPI  
I/O Serial Peripheral Interface 0 serial clock pin  
I/O General-purpose I/O  
PA2  
PA1  
PA0  
PE1  
PE0  
GPIO  
MOSI  
GPIO  
MISO  
GPIO  
XTAL  
GPIO  
EXTAL  
GPIO  
I/O Serial Peripheral Interface 0 master out/slave in pin  
I/O General-purpose I/O  
I/O Serial Peripheral Interface 0 master in/slave out pin  
I/O General-purpose I/O  
-
CPMU OSC XTAL pin  
I/O General-purpose I/O  
CPMU OSC EXTAL pin  
I/O General-purpose I/O  
E
GPI  
-
4.17.3 Memory map and register definition  
This section provides a detailed description of all Port Integration Module registers.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
198/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.17.3.1 Memory map  
Table 292. PIM register summary  
Register  
Bit 7  
6
5
4
3
2
1
Bit 0  
Name  
R
0x0000  
PORTA  
PA7  
PA6  
0
PA5  
0
PA4  
0
PA3  
0
PA2  
0
PA1  
PA0  
W
R
W
R
0
0x0001  
PORTE  
PE1  
PE0  
0x0002  
DDRA  
DDRA7  
0
DDRA6  
0
DDRA5  
0
DDRA4  
0
DDRA3  
0
DDRA2  
0
DDRA1  
DDRA0  
W
R
0x0003  
DDRE  
DDRE1  
0
DDRE0  
0
W
R
0x0004-  
0x0009  
Reserved  
0
0
0
0
0
0
0
0
W
R
W
R
0
0
0
0
0
0x000C  
PUCR  
BKPUE  
0
PDPEE  
0
0
0
0
0x000D  
RDRIV  
RDPD  
PTIA3  
RDPC  
PTIA2  
W
R
PTIA7  
PTIA6  
PTIA5  
PTIA4  
PTIA1  
PTIE1  
0
PTIA0  
PTIE0  
0
0x0120  
PTIA  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0x0121  
PTIE  
W
R
0x0122-  
0x017F  
W
Reserved  
= Unimplemented or Reserved  
4.17.3.2 Port A data register (PORTA)  
Table 293. Port A data register (PORTA)  
Address  
Access: User read/write  
1 0  
0x0000  
7
6
5
4
3
2
R
PA7  
PA6  
PA5  
PA4  
PA3  
PA2  
PA1  
PA0  
W
SPI  
Function  
0
0
0
0
SS  
0
SCK  
0
MOSI  
0
MISO  
0
Reset  
Read: Anytime.  
Write: Anytime.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
199/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 294. PORTA register field descriptions  
Field  
Description  
Port A general purpose input/output data—Data Register In / output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered and synchronized  
pin input state is read.  
7–4  
PA  
Port A general purpose input/output data—Data Register, SPI SS input/output  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The SPI function takes precedence over the general purpose I/O function if enabled.  
3
PA  
Port A general purpose input/output data—Data Register, SPI SCK input/output  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The SPI function takes precedence over the general purpose I/O function if enabled.  
2
PA  
Port A general purpose input/output data—Data Register, SPI MOSI input/output  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The SPI function takes precedence over the general purpose I/O function if enabled.  
1
PA  
Port A general purpose input/output data—Data Register, SPI MISO input/output  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The SPI function takes precedence over the general purpose I/O function if enabled.  
0
PA  
4.17.3.3 Port E data register (PORTE)  
Table 295. Port E data register (PORTE)  
Address  
Access: User read/write  
1 0  
0x0001  
7
6
0
5
0
4
0
3
0
2
0
R
0
PE1  
PE0  
W
CPMU  
OSC  
Function  
0
0
0
0
0
0
XTAL  
0
EXTAL  
0
Reset  
Read: Anytime.  
Write: Anytime.  
Table 296. PORTE register field descriptions  
Field  
Description  
Port E general purpose input/output data—Data Register, CPMU OSC XTAL signal  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The CPMU OSC function takes precedence over the general purpose I/O function if enabled.  
1
PE  
Port E general purpose input/output data—Data Register, CPMU OSC EXTAL signal  
When not used with the alternative function, this pin can be used as general purpose I/O.  
In general purpose output mode the register bit is driven to the pin.  
If the associated data direction bit of this pin is set to 1, a read returns the value of the port register, otherwise the buffered pin input state  
is read. The CPMU OSC function takes precedence over the general purpose I/O function if enabled.  
0
PE  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
200/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.17.3.4 Port A data direction register (DDRA)  
Table 297. Port A data direction register (DDRA)  
Address  
Access: User read/write  
0x0002  
7
6
DDRA6  
0
5
DDRA5  
0
4
DDRA4  
0
3
DDRA3  
0
2
DDRA2  
0
1
DDRA1  
0
0
DDRA0  
0
R
W
DDRA7  
0
Reset  
Read: Anytime.  
Write: Anytime.  
Table 298. DDRA register field descriptions  
Field  
Description  
Port A Data Direction—  
7–4  
DDRA  
This bit determines whether the associated pin is an input or output.  
1 Associated pin is configured as output.  
0 Associated pin is configured as input.  
Port A Data Direction—  
This bit determines whether the associated pin is an input or output.  
3–0  
DDRA  
Depending on the configuration of the enabled SPI the I/O state will be forced to input or output. In this case, the data direction bits will not  
change.  
1 Associated pin is configured as output.  
0 Associated pin is configured as input.  
4.17.3.5 Port E data direction register (DDRE)  
Table 299. Port E data direction register (DDRE)  
Address  
Access: User read/write  
0x0003  
7
6
0
5
0
4
0
3
0
2
0
1
0
DDRE0  
0
R
W
0
0
DDRE1  
0
Reset  
0
0
0
0
0
Read: Anytime.  
Write: Anytime.  
Table 300. DDRE register field descriptions  
Field  
Description  
Port E Data Direction—  
This bit determines whether the associated pin is an input or output.  
1–0  
DDRE  
The enabled CPMU OSC function connects the associated pins directly to the oscillator module. In this case, the data direction bits will not  
change.  
1 Associated pin is configured as output.  
0 Associated pin is configured as input.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
201/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.17.3.6 Pull-up control register (PUCR)  
Table 301. Pull control register (PUCR)  
Address  
Access: User read/write  
0x000C  
7
6
BKPUE  
1
5
0
4
0
3
0
2
0
1
PDPEE  
1
0
0
R
W
0
0
Reset  
0
0
0
0
0
Read: Anytime.  
Write: Anytime.  
Table 302. PUCR register field descriptions  
Field  
Description  
BKGD pin pull-up Enable—Enable pull-up devices on BKGD pin  
This bit configures whether a pull-up device is activated, if the pin is used as input. This bit has no effect if the pin is used as output.  
Out of reset the pull-up device is enabled.  
1 Pull-up device enabled.  
0 Pull-up device disabled.  
6
BKPUE  
Pull-down Port E Enable—Enable pull-down devices on all Port E input pins  
This bit configures whether pull-down devices are activated, if the pins are used as inputs. This bit has no effect if the pins are used as  
outputs. Out of reset the pull-down devices are enabled. If the CPMU OSC function is active, the pull-down devices are disabled. In this  
case, the register bit will not change.  
1
PDPEE  
1 Pull-down devices enabled.  
0 Pull-down devices disabled.  
4.17.3.7 Reduced drive register (RDRIV)  
Table 303. Reduced drive register (RDRIV)  
Address  
Access: User read/write  
0x000D  
7
6
0
5
0
4
0
3
RDPD  
0
2
RDPC  
0
1
0
0
0
R
W
0
Reset  
0
0
0
0
0
0
Read: Anytime.  
Write: Anytime.  
Table 304. RDRIV register field descriptions  
Field  
Description  
Port D reduced driveSelect reduced drive for output pins  
3
This bit configures the drive strength of output pins as either full or reduced. If a pin is used as input, this bit has no effect.  
1 Reduced drive selected (1/5 of the full drive strength)  
RDPD  
0 Full drive strength enabled  
Port C reduced driveSelect reduced drive for D2DCLK output pin  
This bit configures the drive strength of D2DCLK output pin as either full or reduced.  
1 Reduced drive selected (1/5 of the full drive strength)  
0 Full drive strength enabled  
2
RDPC  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
202/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.17.3.8 Port A input register (PTIA)  
Table 305. Port A input register (PTIA)  
Address  
Access: User read  
0x0120  
7
6
5
4
3
2
1
0
R
PTIA7  
u
PTIA6  
PTIA5  
PTIA4  
PTIA3  
PTIA2  
PTIA1  
PTIA0  
W
(242)  
Reset  
u
u
u
u
u
u
u
Notes  
242. u = Unaffected by reset  
Read: Anytime.  
Write: Unimplemented. Writing to this register has no effect.  
Table 306. PTIA register field descriptions  
Field  
Description  
Port A input data—  
7–0  
A read always returns the buffered input state of the associated pin. It can be used to detect overload or short-circuit conditions on output  
pins.  
PTIA  
4.17.3.9 Port E input register (PTIE)  
Table 307. Port E input register (PTIE)  
Address  
Access: User read  
0x0121  
7
6
0
5
0
4
0
3
0
2
0
1
0
R
0
u
PTIE1  
PTIE0  
W
Reset  
u
u
u
u
u
u
u
(243)  
Notes  
243. u = Unaffected by reset  
Read: Anytime.  
Write: Unimplemented. Writing to this register has no effect.  
Table 308. PTIE register field descriptions  
Field  
Description  
Port E input data—  
1–0  
A read always returns the buffered input state of the associated pin. It can be used to detect overload or short-circuit conditions on output  
pins.  
PTIE  
4.17.4 Functional description  
4.17.4.1 Registers  
4.17.4.1.1  
Data register (PORTx)  
This register holds the value driven out to the pin, if the pin is used as a general purpose I/O.  
Writing to this register has only an effect on the pin, if the pin is used as general purpose output. When reading this address, the buffered  
and synchronized state of the pin is returned, if the associated data direction register bit is set to “0”.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
203/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
If the data direction register bits are set to logic level “1”, the contents of the data register is returned. This is independent of any other  
configuration (Figure 53).  
4.17.4.1.2  
Data direction register (DDRx)  
This register defines whether the pin is used as an input or an output.  
If a peripheral module controls the pin the contents of the data direction register is ignored (Figure 53).  
4.17.4.1.3  
Input register (PTIx)  
This is a read-only register and always returns the buffered and synchronized state of the pin (Figure 53).  
synch.  
PTIx  
0
1
PIN  
0
PORTx  
1
0
DDRx  
1
data out  
output enable  
Periph.  
port enable  
Module  
data in  
Figure 53. Illustration of I/O pin functionality  
4.17.4.1.4  
Reduced drive register (RDRIV)  
If the pin is used as an output, this register allows the configuration of the drive strength.  
4.17.4.1.5  
Pull device enable register (PUCR)  
This register turns on a pull-up or pull-down device. It becomes active only if the pin is used as an input.  
4.17.4.2 Ports  
4.17.4.2.1  
Port A  
This port is associated with the SPI. Port A pins PA7-0 can be used for general purpose I/O and PA3-0 also with the SPI subsystem.  
4.17.4.2.2  
Port E  
This port is associated with the CPMU OSC. Port E pins PE1-0 can be used for general purpose or with the CPMU OSC module.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
204/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.17.5 Initialization information  
4.17.5.1 Port data and data direction register writes  
Writing PTx and DDRx in a word access is not recommended. When changing the register pins from inputs to outputs, the data may have  
extra transitions during the write access. Initialize the port data register before enabling the outputs.  
4.18 MCU - interrupt module (S12S9S12I128PIMV1V1)  
4.18.1 Introduction  
The 9S12I128PIMV1 module decodes the priority of all system exception requests and provides the applicable vector for processing the  
exception to the CPU. The 9S12I128PIMV1 module supports:  
I bit and X bit maskable interrupt requests  
A non-maskable unimplemented op-code trap  
A non-maskable software interrupt (SWI) or background debug mode request  
Three system reset vector requests  
A spurious interrupt vector  
Each of the I bit maskable interrupt requests is assigned to a fixed priority level.  
4.18.1.1 Glossary  
Table 309 contains terms and abbreviations used in the document.  
Table 309. Terminology  
Term  
CCR  
ISR  
Meaning  
Condition Code Register (in the CPU)  
Interrupt Service Routine  
MCU  
Micro-controller Unit  
4.18.1.2 Features  
Interrupt vector base register (IVBR)  
One spurious interrupt vector (at address vector base(244) + 0x0080).  
2–58 I bit maskable interrupt vector requests (at addresses vector base + 0x0082–0x00F2)  
I bit maskable interrupts can be nested  
One X bit maskable interrupt vector request (at address vector base + 0x00F4)  
One non-maskable software interrupt request (SWI) or background debug mode vector request (at address vector base +  
0x00F6)  
One non-maskable unimplemented op-code trap (TRAP) vector (at address vector base + 0x00F8)  
Three system reset vectors (at addresses 0xFFFA–0xFFFE)  
Determines the highest priority interrupt vector requests, drives the vector to the bus on CPU request  
Wakes up the system from stop or wait mode when an appropriate interrupt request occurs  
Notes  
244. The vector base is a 16-bit address which is accumulated from the contents of the interrupt vector base register (IVBR, used as upper byte) and 0x00  
(used as lower byte).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
205/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.18.1.3 Modes of operation  
Run mode  
This is the basic mode of operation.  
Wait mode  
In Wait mode, the clock to the 9S12I128PIMV1 module is disabled. The 9S12I128PIMV1 module is however capable of waking  
up the CPU from Wait mode, if an interrupt occurs. Refer to Section 4.18.5.3, “Wake-up from stop or wait mode"” for details  
Stop mode  
In Stop mode, the clock to the 9S12I128PIMV1 module is disabled. The 9S12I128PIMV1 module is however capable of waking  
up the CPU from Stop mode, if an interrupt occurs. Refer to Section 4.18.5.3, “Wake-up from stop or wait mode"” for details  
Freeze mode (BDM active)  
In Freeze mode (BDM active), the interrupt vector base register is overridden internally. Refer to Section 4.18.3.1.1, “Interrupt  
vector base register (IVBR)"” for details  
4.18.1.4 Block diagram  
Figure 54 shows a block diagram of the 9S12I128PIMV1 module.  
Peripheral  
Interrupt Requests  
Wake-up  
CPU  
Vector  
Address  
Non I bit Maskable Channels  
I bit Maskable Channels  
IVBR  
Interrupt  
Requests  
Figure 54. 9S12I128PIMV1 block diagram  
4.18.2 External signal description  
The 9S12I128PIMV1 module has no external signals.  
4.18.3 Memory map and register definition  
This section provides a detailed description of all registers accessible in the 9S12I128PIMV1 module.  
4.18.3.1 Register descriptions  
This section describes in address order all the 9S12I128PIMV1 registers and their individual bits.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
206/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.18.3.1.1  
Interrupt vector base register (IVBR)  
Table 310. Interrupt vector base register (IVBR)  
Address: 0x001F  
7
1
6
1
5
1
4
1
3
1
2
1
1
1
0
1
R
W
IVB_ADDR[7:0]  
Reset  
Read: Anytime.  
Write: Anytime.  
Table 311. IVBR field descriptions  
Field  
Description  
Interrupt Vector Base Address Bits — These bits represent the upper byte of all vector addresses. Out of reset, these bits are set  
to 0xFF (i.e., vectors are located at 0xFF80–0xFFFE) to ensure compatibility to HCS12.  
Note: A system reset will initialize the interrupt vector base register with “0xFF” before it is used to determine the reset vector  
address. Therefore, changing the IVBR has no effect on the location of the three reset vectors (0xFFFA–0xFFFE).  
Note: If the BDM is active (i.e., the CPU is in the process of executing BDM firmware code), the contents of IVBR are ignored and  
the upper byte of the vector address is fixed as “0xFF”. This is done to enable handling of all non-maskable interrupts in the  
BDM firmware.  
7–0  
IVB_ADDR[7:0]  
4.18.4 Functional description  
The 9S12I128PIMV1 module processes all exception requests to be serviced by the CPU module. These exceptions include interrupt  
vector requests and reset vector requests. Each of these exception types and their overall priority level is discussed in the following  
subsections.  
4.18.4.1 S12S exception requests  
The CPU handles both reset requests and interrupt requests. A priority decoder is used to evaluate the priority of pending interrupt  
requests.  
4.18.4.2 Interrupt prioritization  
The 9S12I128PIMV1 module contains a priority decoder to determine the priority for all interrupt requests pending for the CPU. If more  
than one interrupt request is pending, the interrupt request with the higher vector address wins the prioritization.  
The following conditions must be met for an I bit maskable interrupt request to be processed.  
1. The local interrupt enabled bit in the peripheral module must be set.  
2. The I bit in the condition code register (CCR) of the CPU must be cleared.  
3. There is no SWI, TRAP, or X bit maskable request pending.  
NOTE  
All non I bit maskable interrupt requests always have higher priority than the I bit maskable interrupt  
requests. If the X bit in the CCR is cleared, it is possible to interrupt an I bit maskable interrupt by an  
X bit maskable interrupt. It is possible to nest non maskable interrupt requests, e.g., by nesting SWI  
or TRAP calls.  
Since an interrupt vector is only supplied at the time when the CPU requests it, it is possible that a higher priority interrupt request could  
override the original interrupt request that caused the CPU to request the vector. In this case, the CPU will receive the highest priority  
vector and the system will process this interrupt request first, before the original interrupt request is processed.  
If the interrupt source is unknown (for example, in the case where an interrupt request becomes inactive after the interrupt has been  
recognized, but prior to the CPU vector request), the vector address supplied to the CPU will default to that of the spurious interrupt vector.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
207/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
Care must be taken to ensure that all interrupt requests remain active until the system begins  
execution of the applicable service routine; otherwise, the exception request may not get processed  
at all or the result may be a spurious interrupt request (vector at address (vector base + 0x0080)).  
4.18.4.3 Reset exception requests  
The 9S12I128PIMV1 module supports three system reset exception request types (Refer to the Clock and Reset generator module for  
details):  
1. Pin reset, power-on reset or illegal address reset, low voltage reset (if applicable)  
2. Clock monitor reset request  
3. COP watchdog reset request  
4.18.4.4 Exception priority  
The priority (from highest to lowest) and address of all exception vectors issued by the 9S12I128PIMV1 module upon request by the CPU  
is shown in Table 312.  
Table 312. Exception vector map and priority  
(245)  
Vector address  
0xFFFE  
Source  
Pin reset, power-on reset, illegal address reset, low voltage reset (if applicable)  
Clock monitor reset  
0xFFFC  
0xFFFA  
COP watchdog reset  
(Vector base + 0x00F8)  
(Vector base + 0x00F6)  
(Vector base + 0x00F4)  
(Vector base + 0x00F2)  
Unimplemented opcode trap  
Software interrupt instruction (SWI) or BDM vector request  
(246)  
X bit maskable interrupt request (XIRQ or D2D error interrupt)  
(247)  
IRQ or D2D interrupt request  
Device specific I bit maskable interrupt sources (priority determined by the low byte of the vector address, in  
descending order)  
(Vector base + 0x00F0–0x0082)  
(Vector base + 0x0080)  
Spurious interrupt  
Notes  
245. 16-bit vector address based  
246. D2D error interrupt on MCUs featuring a D2D initiator module, otherwise XIRQ pin interrupt  
247. D2D interrupt on MCUs featuring a D2D initiator module, otherwise IRQ pin interrupt  
4.18.5 Initialization/application information  
4.18.5.1 Initialization  
After a system reset, the software should:  
1. Initialize the interrupt vector base register, if the interrupt vector table is not located at the default location (0xFF80–0xFFF9).  
2. Enable I bit maskable interrupts by clearing the I bit in the CCR.  
3. Enable the X bit maskable interrupt by clearing the X bit in the CCR.  
4.18.5.2 Interrupt nesting  
The interrupt request scheme makes it possible to nest I bit maskable interrupt requests handled by the CPU.  
I bit maskable interrupt requests can be interrupted by an interrupt request with a higher priority.  
I bit maskable interrupt requests cannot be interrupted by other I bit maskable interrupt requests per default. In order to make an interrupt  
service routine (ISR) interruptible, the ISR must explicitly clear the I bit in the CCR (CLI). After clearing the I bit, other I bit maskable  
interrupt requests can interrupt the current ISR.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
208/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
An ISR of an interruptible I bit maskable interrupt request could basically look like this:  
1. Service interrupt, e.g., clear interrupt flags, copy data, etc.  
2. Clear I bit in the CCR by executing the instruction CLI (thus allowing other I bit maskable interrupt requests)  
3. Process data  
4. Return from interrupt by executing the instruction RTI  
4.18.5.3 Wake-up from stop or wait mode  
4.18.5.3.1  
CPU wake-up from stop or wait mode  
Every I bit maskable interrupt request is capable of waking the MCU from Stop or Wait mode. To determine whether an I bit maskable  
interrupts is qualified to wake-up the CPU, the same conditions as in normal run mode are applied during Stop or Wait mode:  
If the I bit in the CCR is set, all I bit maskable interrupts are masked from waking up the MCU. Since there are no clocks running in Stop  
mode, only interrupts which can be asserted asynchronously can wake-up the MCU from Stop mode.  
NOTE  
The only asynchronously asserted, I bit maskable interrupt for the MM912_637 would be the “D2D  
External Interrupt”.  
The X bit maskable interrupt request can wake-up the MCU from Stop or Wait mode at anytime, even if the X bit in CCR is set. If the X bit  
maskable interrupt request is used to wake-up the MCU with the X bit in the CCR set, the associated ISR is not called. The CPU then  
resumes program execution with the instruction following the WAI or STOP instruction. This features works the same rules as with any  
interrupt request, i.e. care must be taken that the X interrupt request used for wake-up remains active at least until the system begins  
execution of the instruction following the WAI or STOP instruction; otherwise, wake-up may not occur.  
NOTE  
The only X bit maskable interrupt for the MM912_637 would be the D2D Error Interrupt. As the D2D  
Initiator module is not active during STOP and WAIT mode, no X bit maskable interrupt source is  
existing for the MM912_637.  
4.19 Memory map control (S12PMMCV1)  
4.19.1 Introduction  
The S12PMMC module controls the access to all internal memories and peripherals for the CPU12 and S12SBDM module. It regulates  
access priorities and determines the address mapping of the on-chip resources. Figure 55 shows a block diagram of the S12PMMC  
module.  
4.19.1.1 Glossary  
Table 313. Glossary of terms  
Term  
Definition  
Address within the CPU12’s Local Address Map (Figure 60)  
Address within the Global Address Map (Figure 60)  
Bus access to an even address.  
Local Address  
Global Address  
Aligned Bus Access  
Misaligned Bus Access  
Bus access to an odd address.  
NS  
Normal Single-chip Mode  
SS  
Special Single-chip Mode  
Unimplemented Address Ranges  
Address ranges which are not mapped to any on-chip resource.  
Program Flash  
P-Flash  
D-Plash  
Data Flash  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
209/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 313. Glossary of terms (continued)  
Term  
Definition  
NVM  
IFR  
Non-volatile Memory; P-Flash or D-Flash  
NVM Information Row. Refer to FTMRC Block Guide  
4.19.1.2 Overview  
The S12PMMC connects the CPU12’s and the S12SBDM’s bus interfaces to the MCU’s on-chip resources (memories and peripherals).  
It arbitrates the bus accesses and determines all of the MCU’s memory maps. Furthermore, the S12PMMC is responsible for constraining  
memory accesses on secured devices and for selecting the MCU’s functional mode.  
4.19.1.3 Features  
The main features of this block are:  
Paging capability to support a global 256 kByte memory address space  
Bus arbitration between the masters CPU12, S12SBDM to different resources  
MCU operation mode control  
MCU security control  
Separate memory map schemes for each master CPU12, S12SBDM  
Generation of system reset when CPU12 accesses an unimplemented address (i.e., an address which does not belong to any  
of the on-chip modules) in single-chip modes  
4.19.1.4 Modes of operation  
The S12PMMC selects the MCU’s functional mode. It also determines the devices behavior in secured and unsecured state.  
4.19.1.4.1  
Functional modes  
Two functional modes are implemented on devices of the S12I product family:  
Normal Single Chip (NS)  
The mode used for running applications.  
Special Single Chip Mode (SS)  
A debug mode which causes the device to enter BDM Active Mode after each reset. Peripherals may also provide special debug  
features in this mode  
4.19.1.4.2  
Security  
S12I devices can be secured to prohibit external access to the on-chip P-Flash. The S12PMMC module determines the access  
permissions to the on-chip memories in secured and unsecured state.  
4.19.1.5 Block diagram  
Figure 55 shows a block diagram of the S12PMMC.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
210/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
CPU  
BDM  
MMC  
Address Decoder & Priority  
Target Bus Controller  
DBG  
D-Flash  
P-Flash  
RAM  
Peripherals  
Figure 55. S12PMMC block diagram  
4.19.2 External signal description  
The S12PMMC uses two external pins to determine the devices operating mode: RESET and MODC (Table 314) See Device User Guide  
(DUG) for the mapping of these signals to device pins.  
Table 314. External system pins associated With S12PMMC  
Pin Name  
Pin Functions  
Description  
RESET (See DUG)  
RESET  
The RESET pin is used the select the MCU’s operating mode.  
The MODC pin is captured at the rising edge of the RESET pin. The captured value  
determines the MCU’s operating mode.  
MODC (See DUG)  
MODC  
4.19.3 Memory map and registers  
4.19.3.1 Module memory map  
A summary of the registers associated with the S12PMMC block is shown in Table 315. Detailed descriptions of the registers and bits are  
given in the subsections that follow.  
Table 315. MMC register table  
Address  
Register name  
Bit 7  
6
5
4
3
2
1
Bit 0  
0x000A  
R
W
R
0
0
0
0
0
0
0
0
Reserved  
0x000B  
0
0
0
0
0
0
0
MODE  
MODC  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
211/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 315. MMC register table (continued)  
0x0010  
0x0011  
0x0012  
0x0013  
0x0014  
0x0015  
R
W
R
0
0
0
0
0
0
0
0
Reserved  
DIRECT  
Reserved  
Reserved  
Reserved  
PPAGE  
DP15  
0
DP14  
0
DP13  
0
DP12  
0
DP11  
0
DP10  
0
DP9  
0
DP8  
0
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
W
R
W
R
PIX3  
PIX2  
PIX1  
PIX0  
W
= Unimplemented or Reserved  
4.19.3.2 Register descriptions  
This section consists of the S12PMMC control register descriptions in address order.  
4.19.3.2.1  
Mode register (MODE)  
Table 316. Mode register (MODE)  
Address: 0x000B  
7
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
MODC  
(248)  
Reset  
MODC  
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Notes  
248. External signal (see Table 314).  
Read: Anytime.  
Write: Only if a transition is allowed (see Figure 56).  
The MODC bit of the MODE register is used to select the MCU’s operating mode.  
Table 317. MODE field descriptions  
Field  
Description  
Mode Select Bit — This bit controls the current operating mode during RESET high (inactive). The external mode MODC pin determines  
the operating mode during RESET low (active). The state of the pin is registered into the respective register bit after the RESET signal  
goes inactive (see Figure 56).  
7
Write restrictions exist to disallow transitions between certain modes. Figure 56 illustrates all allowed mode changes. Attempting non  
authorized transitions will not change the MODE bit, but it will block further writes to the register bit except in special modes.  
MODC  
Write accesses to the MODE register are blocked when the device is secured.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
212/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
RESET  
1
0
Special  
Single-Chip  
(SS)  
Normal  
Single-Chip  
(NS)  
1
0
1
Figure 56. Mode transition diagram when MCU is unsecured  
4.19.3.2.2  
Direct page register (DIRECT)  
Table 318. Direct register (DIRECT)  
Address: 0x0011  
7
DP15  
0
6
DP14  
0
5
DP13  
0
4
DP12  
0
3
DP11  
0
2
DP10  
0
1
DP9  
0
0
DP8  
0
R
W
Reset  
Read: Anytime.  
Write: anytime in special SS, write-one in NS.  
This register determines the position of the 256 Byte direct page within the memory map.It is valid for both global and local mapping  
scheme.  
Table 319. DIRECT field descriptions  
Field  
Description  
7–0  
Direct Page Index Bits 15–8 — These bits are used by the CPU when performing accesses using the direct addressing mode. These  
register bits form bits [15:8] of the local address (see Figure 57).  
DP[15:8]  
Bit0  
Bit15  
Bit8  
Bit7  
DP [15:8]  
CPU Address [15:0]  
Figure 57. DIRECT address mapping  
Example 1. This example demonstrates usage of the Direct Addressing Mode  
MOVB  
LDY  
#$80,DIRECT  
;Set DIRECT register to 0x80. Write once only.  
;Global data accesses to the range 0xXX_80XX can be direct.  
;Logical data accesses to the range 0x80XX are direct.  
<$00  
;Load the Y index register from 0x8000 (direct access).  
;< operator forces direct access on some assemblers but in  
;many cases assemblers are “direct page aware” and can  
;automatically select direct mode.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
213/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.19.3.2.3  
Program page index register (PPAGE)  
Table 320. Program page index register (PPAGE)  
Address: 0x0030  
7
0
6
0
5
0
4
0
3
PIX3  
1
2
PIX2  
1
1
PIX1  
1
0
PIX0  
0
R
W
Reset  
0
0
0
0
Read: Anytime.  
Write: Anytime.  
These four index bits are used to map 16 kB blocks into the Flash page window located in the local (CPU or BDM) memory map, from  
address 0x8000 to address 0xBFFF (see Figure 58). This supports accessing up to 256 kB of Flash (in the Global map) within the 64 kB  
Local map. The PPAGE index register is effectively used to construct paged Flash addresses in the Local map format. The CPU has  
special access to read and write this register directly during execution of CALL and RTC instructions.  
Global Address [17:0]  
Bit17  
Bit0  
Bit14 Bit13  
PPAGE Register [3:0]  
Address [13:0]  
Address: CPU Local Address  
or BDM Local Address  
Figure 58. PPAGE address mapping  
NOTE  
Writes to this register using the special access of the CALL and RTC instructions will be complete  
before the end of the instruction execution.  
Table 321. PPAGE field descriptions  
Field  
Description  
3–0  
Program Page Index Bits 3–0 — These page index bits are used to select which of the 256 P-Flash or ROM array pages is to be  
accessed in the Program Page Window.  
PIX[3:0]  
The fixed 16 kB page from 0x0000 to 0x3FFF is the page number 0x0C. Parts of this page are covered by Registers, D-Flash and RAM  
space. See the SoC Guide for details.  
The fixed 16 kB page from 0x4000–0x7FFF is the page number 0x0D. The reset value of 0x0E ensures that there is linear Flash space  
available between addresses 0x0000 and 0xFFFF out of reset. The fixed 16 kB page from 0xC000-0xFFFF is the page number 0x0F.  
4.19.4 Functional description  
The S12PMMC block performs several basic functions of the S12I sub-system operation: MCU operation modes, priority control, address  
mapping, select signal generation, and access limitations for the system. Each aspect is described in the following subsections.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
214/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.19.4.1 MCU operating modes  
Normal single chip mode  
This is the operation mode for running application code. There is no external bus in this mode.  
Special single chip mode  
This mode is generally used for debugging operation, boot-strapping or security related operations. The active background  
debug mode is in control of the CPU code execution and the BDM firmware is waiting for serial commands sent through the  
BKGD pin.  
4.19.4.2 Memory map scheme  
4.19.4.2.1  
CPU and BDM memory map scheme  
The BDM firmware lookup tables and BDM register memory locations share addresses with other modules; however they are not visible  
in the memory map during user’s code execution. The BDM memory resources are enabled only during the READ_BD and WRITE_BD  
access cycles to distinguish between accesses to the BDM memory area and accesses to the other modules. (Refer to the BDM Block  
Guide for further details).  
When the MCU enters active BDM mode, the BDM firmware look-up tables and the BDM registers become visible in the local memory  
map in the range 0xFF00-0xFFFF (global address 0x3_FF00 - 0x3_FFFF) and the CPU begins execution of firmware commands or the  
BDM begins execution of hardware commands. The resources which share memory space with the BDM module will not be visible in the  
memory map during active BDM mode.  
Note that after the MCU enters active BDM mode the BDM firmware look-up tables and the BDM registers will also be visible between  
addresses 0xBF00 and 0xBFFF if the PPAGE register contains value of 0x0F.  
4.19.4.2.1.1 Expansion of the local address map  
4.19.4.2.1.1.1 Expansion of the CPU local address map  
The program page index register in S12PMMC allows accessing up to 256 kB of P-Flash in the global memory map by using the four index  
bits (PPAGE[3:0]) to page 16x16 kB blocks into the program page window, located from address 0x8000 to address 0xBFFF in the local  
CPU memory map.  
The page value for the program page window is stored in the PPAGE register. The value of the PPAGE register can be read or written by  
normal memory accesses as well as by the CALL and RTC instructions (see Section 4.19.6.1, “CALL and RTC instructions").  
Control registers, vector space and parts of the on-chip memories are located in unpaged portions of the 64 kB local CPU address space.  
The starting address of an interrupt service routine must be located in unpaged memory unless the user is certain that the PPAGE register  
will be set to the appropriate value when the service routine is called. However an interrupt service routine can call other routines that are  
in paged memory. The upper 16 kB block of the local CPU memory space (0xC000–0xFFFF) is unpaged. It is recommended that all reset  
and interrupt vectors point to locations in this area or to the other unmapped pages sections of the local CPU memory map.  
4.19.4.2.1.1.2 Expansion of the BDM local address map  
PPAGE and BDMPPR register is also used for the expansion of the BDM local address to the global address. These registers can be read  
and written by the BDM. The BDM expansion scheme is the same as the CPU expansion scheme. The four BDMPPR Program Page  
index bits allow access to the full 256 kB address map that can be accessed with 18 address bits.  
The BDM program page index register (BDMPPR) is used only when the feature is enabled in BDM and, in the case the CPU is executing  
a firmware command which uses CPU instructions, or by a BDM hardware commands. See the BDM Block Guide for further details. (see  
Figure 59).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
215/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
BDM HARDWARE COMMAND  
Global Address [17:0]  
Bit14 Bit13  
Bit17  
Bit0  
BDMPPR Register [3:0]  
BDM Local Address [13:0]  
BDM FIRMWARE COMMAND  
Global Address [17:0]  
Bit17  
Bit0  
Bit14 Bit13  
BDMPPR Register [3:0]  
CPU Local Address [13:0]  
Figure 59. BDMPPR address mapping  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
216/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
CPU and BDM  
Global Memory Map  
Local Memory Map  
0x0000  
0x0_0000  
REGISTERS  
REGISTERS  
0x0400  
Unimplemented Area  
D-Flash  
0x1400  
RAM_LOW  
RAM  
Unpaged P-Flash  
0x0_4000  
0x0_4400  
NVM Resources  
D-Flash  
RAM  
0x0_5400  
NVM Resources  
0x4000  
0x0_8000  
Unpaged P-Flash  
P-Flash  
10 *16K paged  
0x8000  
0x3_0000  
Unpaged P-Flash  
or  
0 0 0 0  
P3P2P1  
P0  
Unpaged P-Flash  
Unpaged P-Flash  
P-Flash window  
PPAGE  
0x3_4000  
0x3_8000  
0xC000  
Unpaged P-Flash  
Unpaged P-Flash  
Unpaged P-Flash  
0x3_C000  
0x3_FFFF  
0xFFFF  
Figure 60. Local to global address mapping  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
217/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.19.5 Implemented memory in the system memory architecture  
Each memory can be implemented in its maximum allowed size. But some devices have been defined for smaller sizes, which means  
less implemented pages. All non implemented pages are called unimplemented areas.  
Registers has a fixed size of 1.0 kB, accessible via xbus0  
SRAM has a maximum size of 11 kB, accessible via xbus0  
D-Flash has a fixed size of 4.0 kB accessible via xbus0  
P-Flash has a maximum size of 224 kB, accessible via xbus0  
NVM resources (IFR) including D-Flash have maximum size of 16 kB (PPAGE 0x01)  
4.19.5.0.1  
Implemented memory map  
The global memory spaces reserved for the internal resources (RAM, D-Flash, and P-Flash) are not determined by the MMC module. Size  
of the individual internal resources are however fixed in the design of the device cannot be changed by the user. Refer to the SoC Guide  
for further details. Figure 61 and Table 322 show the memory spaces occupied by the on-chip resources. Note that the memory spaces  
have fixed top addresses.  
Table 322. Global implemented memory space  
Internal resource  
Registers  
Bottom address  
0x0_0000  
Top address  
0x0_03FF  
0x0_3FFF  
0x0_53FF  
0x3_FFFF  
(249)  
(250)  
System RAM  
D-Flash  
RAM_LOW = 0x0_4000 minus RAMSIZE  
0x0_4400  
P-Flash  
PF_LOW = 0x4_0000 minus FLASHSIZE  
Notes  
249. RAMSIZE is the hexadecimal value of RAM SIZE in bytes  
250. FLASHSIZE is the hexadecimal value of FLASH SIZE in bytes  
In single-chip modes accesses by the CPU12 (except for firmware commands) to any of the unimplemented areas (see Figure 61) will  
result in an illegal access reset (system reset). BDM accesses to the unimplemented areas are allowed but the data will be undefined.  
No misaligned word access from the BDM module will occur; these accesses are blocked in the BDM module (Refer to BDM Block Guide).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
218/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
CPU and BDM  
Global Memory Map  
Local Memory Map  
0x0000  
REGISTERS  
0x0_0000  
REGISTERS  
0x0400  
D-Flash  
Unimplemented Area  
0x1400  
RAM_LOW  
Unpaged P-Flash  
RAM  
0x0_4000  
0x0_4400  
NVM Resources  
D-Flash  
RAM  
0x0_5400  
NVM Resources  
0x4000  
0x0_8000  
Unpaged P-Flash  
Unimplemented area  
0x8000  
0 0 0 0  
P3P2P1  
P0  
P-Flash window  
PPAGE  
PF_LOW  
0xC000  
P-Flash  
Unpaged P-Flash  
0xFFFF  
0x3_FFFF  
Figure 61. Implemented global address mapping  
4.19.5.1 Chip bus control  
The S12PMMC controls the address buses and the data buses that interface the bus masters (CPU12, S12SBDM) with the rest of the  
system (master buses). In addition, the MMC handles all CPU read data bus swapping operations. All internal resources are connected  
to specific target buses (see Figure 62).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
219/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
DBG  
CPU  
BDM  
S12X1  
S12X0  
MMC “Crossbar Switch”  
XBUS0  
BDM  
IPBI  
Peripherals  
P-Flash  
SRAM  
D-Flash  
resources  
Figure 62. S12I platform  
4.19.5.1.1  
Master bus prioritization regarding access conflicts on target buses  
The arbitration scheme allows only one master to be connected to a target at any given time. The following rules apply when prioritizing  
accesses from different masters to the same target bus:  
CPU12 always has priority over BDM.  
BDM has priority over CPU12 when its access is stalled for more than 128 cycles. In the later case the CPU will be stalled after  
finishing the current operation and the BDM will gain access to the bus.  
4.19.5.2 Interrupts  
The MMC does not generate any interrupts.  
4.19.6 Initialization/application information  
4.19.6.1 CALL and RTC instructions  
CALL and RTC instructions are uninterruptable CPU instructions that automate page switching in the program page window. The CALL  
instruction is similar to the JSR instruction, but the subroutine that is called can be located anywhere in the local address space or in any  
Flash or ROM page visible through the program page window. The CALL instruction calculates and stacks a return address, stacks the  
current PPAGE value and writes a new instruction-supplied value to the PPAGE register. The PPAGE value controls which of the 256  
possible pages is visible through the 16 kbyte program page window in the 64 kbyte local CPU memory map. Execution then begins at  
the address of the called subroutine.  
During the execution of the CALL instruction, the CPU performs the following steps:  
1. Writes the current PPAGE value into an internal temporary register and writes the new instruction supplied PPAGE value into the  
PPAGE register  
2. Calculates the address of the next instruction after the CALL instruction (the return address) and pushes this 16-bit value onto  
the stack  
3. Pushes the temporarily stored PPAGE value onto the stack  
4. Calculates the effective address of the subroutine, refills the queue and begins execution at the new address  
This sequence is uninterruptable. There is no need to inhibit interrupts during the CALL instruction execution. A CALL instruction can be  
performed from any address to any other address in the local CPU memory space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
220/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The PPAGE value supplied by the instruction is part of the effective address of the CPU. For all addressing mode variations (except  
indexed-indirect modes), the new page value is provided by an immediate operand in the instruction. In indexed indirect variations of the  
CALL instruction, a pointer specifies memory locations where the new page value and the address of the called subroutine are stored.  
Using indirect addressing for both the new page value and the address within the page allows usage of values calculated at run time,  
rather than immediate values that must be known at the time of assembly.  
The RTC instruction terminates subroutines invoked by a CALL instruction. The RTC instruction unstacks the PPAGE value and the return  
address and refills the queue. Execution resumes with the next instruction after the CALL instruction.  
During the execution of an RTC instruction the CPU performs the following steps:  
1. Pulls the previously stored PPAGE value from the stack  
2. Pulls the 16-bit return address from the stack and loads it into the PC  
3. Writes the PPAGE value into the PPAGE register  
4. Refills the queue and resumes execution at the return address  
This sequence is uninterruptable. The RTC can be executed from anywhere in the local CPU memory space.  
The CALL and RTC instructions behave like JSR and RTS instruction. However they require more execution cycles. Usage of JSR/RTS  
instructions is therefore recommended when possible, and CALL/RTC instructions should only be used when needed. The JSR and RTS  
instructions can be used to access subroutines that are already present in the local CPU memory map (i.e. in the same page in the  
program memory page window for example). However calling a function located in a different page requires usage of the CALL instruction.  
The function must be terminated by the RTC instruction. Because the RTC instruction restores contents of the PPAGE register from the  
stack. Functions terminated with the RTC instruction must be called using the CALL instruction, even when the correct page is already  
present in the memory map. This is to make sure that the correct PPAGE value will be present on the stack at the time of the RTC  
instruction execution.  
4.20 MCU - debug module (9S12I128PIMV1)  
4.20.1 Introduction  
The 9S12I128PIMV1 module provides an on-chip trace buffer with flexible triggering capability, to allow non-intrusive debug of application  
software. The 9S12I128PIMV1 module is optimized for S12SCPUdebugging.  
Typically, the 9S12I128PIMV1 module is used in conjunction with the S12SBDM module, whereby the user configures the  
9S12I128PIMV1 module for a debugging session over the BDM interface. Once configured the 9S12I128PIMV1 module is armed, the  
device leaves BDM returning control to the user program, which is then monitored by the 9S12I128PIMV1 module. Alternatively the  
9S12I128PIMV1 module can be configured over a serial interface using SWI routines.  
4.20.1.1 Glossary Of terms  
COF: Change Of Flow. Change in the program flow due to a conditional branch, indexed jump or interrupt.  
BDM: Background Debug Mode  
S12SBDM: Background Debug Module  
DUG: Device User Guide, describing the features of the device into which the DBG is integrated.  
WORD: 16-bit data entity  
Data Line: 20-bit data entity  
CPU: S12SCPU module  
DBG: S12SDBG module  
POR: Power On Reset  
Tag: Tags can be attached to CPU opcodes as they enter the instruction pipe. If the tagged opcode reaches the execution stage a tag hit  
occurs.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
221/396  
NXP Semiconductors  
4.20.1.2 Overview  
MM912_637  
Intelligent integrated precision battery sensor  
The comparators monitor the bus activity of the CPU module. A match can initiate a state sequencer transition. On a transition to the Final  
state, bus tracing is triggered and/or a breakpoint can be generated.  
Independent of comparator matches a transition to Final state with associated tracing and breakpoint can be triggered immediately by  
writing to the TRIG control bit. The trace buffer is visible through a 2-byte window in the register address map and can be read out using  
standard 16-bit word reads. Tracing is disabled when the MCU system is secured.  
4.20.1.3 Features  
Three comparators (A, B and C)  
Comparators A compares the full address bus and full 16-bit data bus  
Comparator A features a data bus mask register  
Comparators B and C compare the full address bus only  
Each comparator features selection of read or write access cycles  
Comparator B allows selection of byte or word access cycles  
Comparator matches can initiate state sequencer transitions  
Three comparator modes  
Simple address/data comparator match mode  
Inside address range mode, Addmin Address Addmax  
Outside address range match mode, Address Addminor Address Addmax  
Two types of matches  
Tagged — This matches just before a specific instruction begins execution  
Force — This is valid on the first instruction boundary after a match occurs  
Two types of breakpoints  
CPU breakpoint entering BDM on breakpoint (BDM)  
CPU breakpoint executing SWI on breakpoint (SWI)  
Trigger mode independent of comparators  
TRIG Immediate software trigger  
Four trace modes  
Normal: change of flow (COF) PC information is stored (see Section 4.20.4.5.2.1, “Normal mode") for change of flow  
definition.  
Loop1: same as Normal but inhibits consecutive duplicate source address entries  
Detail: address and data for all cycles except free cycles and opcode fetches are stored  
Compressed Pure PC: all program counter addresses are stored  
4-stage state sequencer for trace buffer control  
Tracing session trigger linked to Final State of state sequencer  
Begin and End alignment of tracing to trigger  
4.20.1.4 Modes of operation  
The DBG module can be used in all MCU functional modes. During BDM hardware accesses and while the BDM module is active, CPU  
monitoring is disabled. When the CPU enters active BDM Mode through a BACKGROUND command, the DBG module, if already armed,  
remains armed. The DBG module tracing is disabled if the MCU is secure, however, breakpoints can still be generated.  
Table 323. Mode dependent restriction summary  
BDM enable BDM active MCU secure  
Comparator matches enabled  
Breakpoints possible Tagging possible  
Tracing possible  
x
0
0
1
1
x
0
1
0
1
1
0
0
0
0
Yes  
Yes  
Yes  
Yes  
Yes  
No  
Only SWI  
Yes  
Active BDM not possible when not enabled  
Yes  
No  
Yes  
No  
Yes  
No  
Yes  
No  
4.20.1.5 Block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
222/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
TAGS  
TAGHITS  
BREAKPOINT REQUESTS  
TO CPU  
SECURE  
CPU BUS  
TRANSITION  
TAG &  
MATCH0  
MATCH1  
MATCH2  
COMPARATOR A  
COMPARATOR B  
COMPARATOR C  
MATCH  
CONTROL  
LOGIC  
STATE SEQUENCER  
STATE  
TRACE  
CONTROL  
TRIGGER  
TRACE BUFFER  
READ TRACE DATA (DBG READ DATA BUS)  
Figure 63. Debug module block diagram  
4.20.2 External signal description  
There are no external signals associated with this module.  
4.20.3 Memory map and registers  
4.20.3.1 Module memory map  
A summary of the registers associated with the DBG sub-block is shown in Table 324. Detailed descriptions of the registers and bits are  
given in the subsections that follow.  
Table 324. Quick reference to DBG registers  
Address  
Name  
Bit 7  
6
0
5
4
BDM  
0
3
DBGBRK  
0
2
1
Bit 0  
R
W
R
0
0
0x0020  
DBGC1  
ARM  
COMRV  
TRIG  
0
(251)  
TBF  
0
0
SSF2  
SSF1  
0
SSF0  
0x0021  
0x0022  
0x0023  
0x0024  
0x0025  
DBGSR  
DBGTCR  
DBGC2  
W
R
0
0
0
0
TSOURCE  
0
TRCMOD  
TALIGN  
W
R
0
0
0
ABCM  
W
R
Bit 15  
Bit 7  
Bit 14  
Bit 6  
Bit 13  
Bit 5  
Bit 12  
Bit 4  
Bit 11  
Bit 3  
Bit 10  
Bit 2  
Bit 9  
Bit 1  
Bit 8  
Bit 0  
DBGTBH  
DBGTBL  
W
R
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
223/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 324. Quick reference to DBG registers (continued)  
Address  
Name  
Bit 7  
6
5
4
3
2
1
Bit 0  
R
W
R
TBF  
0
CNT  
0x0026  
DBGCNT  
0
0
0
0
0
0
0
0
0x0027  
0x0027  
DBGSCRX  
DBGMFR  
DBGACTL  
DBGBCTL  
DBGCCTL  
DBGXAH  
DBGXAM  
DBGXAL  
DBGADH  
DBGADL  
SC3  
0
SC2  
MC2  
SC1  
MC1  
SC0  
MC0  
W
R
W
R
(252)  
0x0028  
0x0028  
0x0028  
SZE  
SZ  
TAG  
TAG  
BRK  
BRK  
RW  
RW  
RWE  
RWE  
NDB  
0
COMPE  
COMPE  
COMPE  
Bit 16  
Bit 8  
W
R
(253)  
(254)  
SZE  
0
SZ  
0
W
R
0
TAG  
0
BRK  
0
RW  
0
RWE  
0
W
R
0
0
0x0029  
Bit 17  
W
R
0x002A  
0x002B  
0x002C  
0x002D  
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
9
1
W
R
Bit 0  
W
R
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
Bit 8  
W
R
Bit 0  
W
R
0x002E  
0x002F  
DBGADHM  
DBGADLM  
Bit 15  
Bit 7  
14  
6
13  
5
12  
4
11  
3
10  
2
9
1
Bit 8  
Bit 0  
W
R
W
Notes  
251. This bit is visible at DBGCNT[7] and DBGSR[7]  
252. This represents the contents if the Comparator A control register is blended into this address  
253. This represents the contents if the Comparator B control register is blended into this address  
254. This represents the contents if the Comparator C control register is blended into this address  
4.20.3.2 Register descriptions  
This section consists of the DBG control and trace buffer register descriptions in address order. Each comparator has a bank of registers  
that are visible through an 8-byte window between 0x0028 and 0x002F in the DBG module register address map. When ARM is set in  
DBGC1, the only bits in the DBG module registers that can be written are ARM, TRIG, and COMRV[1:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
224/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.3.2.1  
Debug control register 1 (DBGC1)  
Table 325. Debug control register (DBGC1)  
Address: 0x0020  
7
ARM  
0
6
0
5
0
4
BDM  
0
3
DBGBRK  
0
2
0
1
0
0
0
R
W
COMRV  
TRIG  
0
Reset  
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Bits 7, 1, 0 anytime   
Bit 6 can be written anytime but always reads back as 0.   
Bits 4:3 anytime DBG is not armed.  
NOTE  
When disarming the DBG by clearing ARM with software, the contents of bits[4:3] are not affected by  
the write, since up until the write operation, ARM = 1 preventing these bits from being written. These  
bits must be cleared using a second write if required.  
Table 326. DBGC1 field descriptions  
Field  
Description  
Arm Bit — The ARM bit controls whether the DBG module is armed. This bit can be set and cleared by user software and is automatically  
cleared on completion of a debug session, or if a breakpoint is generated with tracing not enabled. On setting this bit the state sequencer  
enters State1.  
7
ARM  
0
1
Debugger disarmed  
Debugger armed  
Immediate Trigger Request Bit — This bit when written to 1 requests an immediate trigger independent of state sequencer status.  
When tracing is complete a forced breakpoint may be generated depending upon DBGBRK and BDM bit settings. This bit always reads  
back a 0. Writing a 0 to this bit has no effect. If the DBGTCR_TSOURCE bit is clear no tracing is carried out. If tracing has already  
commenced using BEGIN trigger alignment, it continues until the end of the tracing session as defined by the TALIGN bit, thus TRIG has  
no affect. In secure mode, tracing is disabled and writing to this bit cannot initiate a tracing session.  
6
TRIG  
The session is ended by setting TRIG and ARM simultaneously.  
0
1
Do not trigger until the state sequencer enters the Final state.  
Trigger immediately  
Background Debug Mode Enable — This bit determines if a breakpoint causes the system to enter Background Debug mode (BDM)  
or initiate a Software Interrupt (SWI). If this bit is set but the BDM is not enabled by the ENBDM bit in the BDM module, then breakpoints  
default to SWI.  
4
BDM  
0
1
Breakpoint to Software Interrupt if BDM inactive. Otherwise no breakpoint.  
Breakpoint to BDM, if BDM enabled. Otherwise breakpoint to SWI  
9S12I128PIMV1 Breakpoint Enable Bit — The DBGBRK bit controls whether the debugger will request a breakpoint on reaching the  
state sequencer Final State. If tracing is enabled, the breakpoint is generated on completion of the tracing session. If tracing is not  
enabled, the breakpoint is generated immediately.  
3
DBGBRK  
0
1
No Breakpoint generated  
Breakpoint generated  
Comparator Register Visibility Bits — These bits determine which bank of comparator register is visible in the 8-byte window of the  
S12SDBG module address map, located between 0x0028 to 0x002F. Furthermore these bits determine which register is visible at the  
address 0x0027. See Table 327.  
1–0  
COMRV  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
225/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 327. COMRV encoding  
COMRV  
00  
Visible comparator  
Visible register at 0x0027  
DBGSCR1  
Comparator A  
Comparator B  
Comparator C  
None  
01  
DBGSCR2  
10  
DBGSCR3  
11  
DBGMFR  
4.20.3.2.2  
Debug status register (DBGSR)  
Table 328. Debug status register (DBGSR)  
Address: 0x0021  
7
6
0
5
0
4
0
3
0
2
1
0
R
TBF  
SSF2  
SSF1  
SSF0  
W
Reset  
POR  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Never  
Table 329. DBGSR field descriptions  
Field  
Description  
Trace Buffer Full — The TBF bit indicates that the trace buffer has stored 64 or more lines of data since it was last armed. If this bit is  
set, then all 64 lines will be valid data, regardless of the value of DBGCNT bits. The TBF bit is cleared when ARM in DBGC1 is written to  
a one. The TBF is cleared by the power on reset initialization. Other system generated resets have no affect on this bit  
7
TBF  
This bit is also visible at DBGCNT[7]  
State Sequencer Flag Bits — The SSF bits indicate in which state the State Sequencer is currently in. During a debug session on each  
transition to a new state these bits are updated. If the debug session is ended by software clearing the ARM bit, then these bits retain  
their value to reflect the last state of the state sequencer before disarming. If a debug session is ended by an internal event, then the  
state sequencer returns to state0 and these bits are cleared to indicate that state0 was entered during the session. On arming the module  
the state sequencer enters state1 and these bits are forced to SSF[2:0] = 001. See Table 330.  
2–0  
SSF[2:0]  
Table 330. SSF[2:0] — State sequence flag bit encoding  
SSF[2:0]  
000  
Current state  
State0 (disarmed)  
State1  
001  
010  
State2  
011  
State3  
100  
Final State  
Reserved  
101,110,111  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
226/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.3.2.3  
Debug trace control register (DBGTCR)  
Table 331. Debug trace control register (DBGTCR)  
Address: 0x0022  
7
0
6
5
0
4
0
3
0
2
0
1
0
0
TALIGN  
0
R
W
TSOURCE  
0
TRCMOD  
Reset  
0
0
0
0
Read: Anytime  
Write: Bit 6 only when DBG is neither secure nor armed.Bits 3,2,0 anytime the module is disarmed.  
Table 332. DBGTCR field descriptions  
Field  
Description  
Trace Source Control Bit — The TSOURCE bit enables a tracing session given a trigger condition. If the MCU system is secured, this  
bit cannot be set and tracing is inhibited.   
6
This bit must be set to read the trace buffer.  
TSOURCE  
0
1
Debug session without tracing requested  
Debug session with tracing requested  
Trace Mode Bits — See Section 4.20.4.5.2, “Trace modes" for detailed Trace mode descriptions. In Normal mode, change of flow  
information is stored. In Loop1 mode, change of flow information is stored but redundant entries into trace memory are inhibited. In Detail  
mode, address and data for all memory and register accesses is stored. In Compressed Pure PC mode the program counter value for  
each instruction executed is stored. See Table 333.  
3–2  
TRCMOD  
Trigger Align Bit — This bit controls whether the trigger is aligned to the beginning or end of a tracing session.  
0
0
1
Trigger at end of stored data  
Trigger before storing data  
TALIGN  
Table 333. TRCMOD trace mode bit encoding  
TRCMOD  
Description  
Normal  
Loop1  
00  
01  
10  
Detail  
11  
Compressed Pure PC  
4.20.3.2.4  
Debug control register2 (DBGC2)  
Table 334. Debug control register2 (DBGC2)  
Address: 0x0023  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
ABCM  
Reset  
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Anytime the module is disarmed  
This register configures the comparators for range matching.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
227/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 335. DBGC2 field descriptions  
Field  
Description  
1–0  
ABCM[1:0]  
A and B Comparator Match Control — These bits determine the A and B comparator match mapping as described in Table 336.  
Table 336. ABCM encoding  
ABCM  
Description  
00  
01  
10  
11  
Match0 mapped to comparator A match: Match1 mapped to comparator B match.  
Match 0 mapped to comparator A/B inside range: Match1 disabled.  
Match 0 mapped to comparator A/B outside range: Match1 disabled.  
(255)  
Reserved  
Notes  
255. Currently defaults to Comparator A, Comparator B disabled  
4.20.3.2.5  
Debug trace buffer register (DBGTBH:DBGTBL)  
Table 337. Debug trace buffer register (DBGTB)  
Address:  
0x0024, 0x0025  
15 14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
R
W
Bit 15 Bit 14 Bit 13 Bit 12 Bit 11 Bit 10  
Bit 9  
Bit 8  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
POR  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Other  
Resets  
Read: Only when unlocked AND unsecured AND not armed AND TSOURCE set  
Write: Aligned word writes when disarmed unlock the trace buffer for reading but do not affect trace buffer contents  
Table 338. DBGTB field descriptions  
Field  
Description  
Trace Buffer Data Bits — The Trace Buffer Register is a window through which the 20-bit wide data lines of the Trace Buffer may be  
read 16 bits at a time. Each valid read of DBGTB increments an internal trace buffer pointer which points to the next address to be read.  
When the ARM bit is set the trace buffer is locked to prevent reading. The trace buffer can only be unlocked for reading by writing to  
DBGTB with an aligned word write when the module is disarmed. The DBGTB register can be read only as an aligned word, any byte  
reads or misaligned access of these registers return a 0, and do not cause the trace buffer pointer to increment to the next trace buffer  
address. Similarly reads while the debugger is armed or with the TSOURCE bit clear, return a 0, and do not affect the trace buffer pointer.  
The POR state is undefined. Other resets do not affect the trace buffer contents.  
15–0  
Bit[15:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
228/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.3.2.6  
Debug count register (DBGCNT)  
Table 339. Debug count register (DBGCNT)  
Address: 0x0026  
7
6
0
5
4
3
2
1
0
R
TBF  
CNT  
W
Reset  
POR  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Never  
Table 340. DBGCNT field descriptions  
Field  
Description  
Trace Buffer Full — The TBF bit indicates that the trace buffer has stored 64 or more lines of data since it was last armed. If this bit is  
set, then all 64 lines will be valid data, regardless of the value of DBGCNT bits. The TBF bit is cleared when ARM in DBGC1 is written  
to a one. The TBF is cleared by the power on reset initialization. Other system generated resets have no affect on this bit  
7
TBF  
This bit is also visible at DBGSR[7]  
Count Value — The CNT bits indicate the number of valid data 20-bit data lines stored in the Trace Buffer. Table 341 shows the  
correlation between the CNT bits and the number of valid data lines in the Trace Buffer. When the CNT rolls over to zero, the TBF bit in  
DBGSR is set and incrementing of CNT will continue in end-trigger mode. The DBGCNT register is cleared when ARM in DBGC1 is  
written to a one. The DBGCNT register is cleared by power-on-reset initialization but is not cleared by other system resets. Thus should  
a reset occur during a debug session, the DBGCNT register still indicates after the reset, the number of valid trace buffer entries stored  
before the reset occurred. The DBGCNT register is not decremented when reading from the trace buffer.  
5–0  
CNT[5:0]  
Table 341. CNT decoding table  
TBF  
CNT[5:0]  
Description  
0
000000  
No data valid  
000001  
000010  
000100  
000110  
...  
1 line valid  
2 lines valid  
4 lines valid  
6 lines valid  
...  
0
111111  
63 lines valid  
64 lines valid; if using Begin trigger alignment, ARM bit will  
be cleared and the tracing session ends.  
1
1
000000  
000001  
...  
64 lines valid, oldest data has been overwritten by most  
recent data  
...  
111110  
4.20.3.2.7  
Debug state control registers  
There is a dedicated control register for each of the state sequencer states 1 to 3, that determines if transitions from that state are allowed,  
depending upon comparator matches or tag hits, and define the next state for the state sequencer following a match. The three debug  
state control registers are located at the same address in the register address map (0x0027). Each register can be accessed using the  
COMRV bits in DBGC1 to blend in the required register. The COMRV = 11 value blends in the match flag register (DBGMFR).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
229/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 342. State control register access encoding  
COMRV  
00  
Visible state control register  
DBGSCR1  
DBGSCR2  
DBGSCR3  
DBGMFR  
01  
10  
11  
4.20.3.2.7.1 Debug state control register 1 (DBGSCR1)  
Table 343. Debug state control register 1 (DBGSCR1)  
Address: 0x0027  
7
0
6
0
5
0
4
0
3
SC3  
0
2
SC2  
0
1
SC1  
0
0
SC0  
0
R
W
Reset  
0
0
0
0
= Unimplemented or Reserved  
Read: If COMRV[1:0] = 00  
Write: If COMRV[1:0] = 00 and DBG is not armed  
This register is visible at 0x0027 only with COMRV[1:0] = 00. The state control register 1 selects the targeted next state while in State1.  
The matches refer to the match channels of the comparator match control logic, as depicted in Figure 63 and described in  
Section 4.20.3.2.8.1, “Debug comparator control register (DBGXCTL)". Comparators must be enabled by setting the comparator enable  
bit in the associated DBGXCTL control register.  
Table 344. DBGSCR1 field descriptions  
Field  
Description  
3–0  
SC[3:0]  
These bits select the targeted next state while in State1, based upon the match event.  
Table 345. State1 sequencer next state selection  
SC[3:0]  
0000  
0001  
0010  
0011  
0100  
0101  
0110  
0111  
1000  
1001  
1010  
1011  
1100  
Description (unspecified matches have no effect)  
Any match to Final State  
Match1 to State3  
Match2 to State2  
Match1 to State2  
Match0 to State2....... Match1 to State3  
Match1 to State3.........Match0 to Final State  
Match0 to State2....... Match2 to State3  
Either Match0 or Match1 to State2  
Reserved  
Match0 to State3  
Reserved  
Reserved  
Reserved  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
230/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 345. State1 sequencer next state selection (continued)  
SC[3:0]  
1101  
Description (unspecified matches have no effect)  
Either Match0 or Match2 to Final State........Match1 to State2  
1110  
Reserved  
Reserved  
1111  
The priorities described in Table 378 dictate that in the case of simultaneous matches, a match leading to final state has priority followed  
by the match on the lower channel number (0,1,2). Thus with SC[3:0]=1101, a simultaneous match0/match1 transitions to Final state.  
4.20.3.2.7.2 Debug state control register 2 (DBGSCR2)  
Table 346. Debug state control register 2 (DBGSCR2)  
Address: 0x0027  
7
0
6
0
5
0
4
0
3
SC3  
0
2
SC2  
0
1
SC1  
0
0
SC0  
0
R
W
Reset  
0
0
0
0
= Unimplemented or Reserved  
Read: If COMRV[1:0] = 01  
Write: If COMRV[1:0] = 01 and DBG is not armed  
This register is visible at 0x0027 only with COMRV[1:0] = 01. The state control register 2 selects the targeted next state while in State 2.  
The matches refer to the match channels of the comparator match control logic, as depicted in Figure 63 and described in  
Section 4.20.3.2.8.1, “Debug comparator control register (DBGXCTL)". Comparators must be enabled by setting the comparator enable  
bit in the associated DBGXCTL control register.  
Table 347. DBGSCR2 field descriptions  
Field  
Description  
3–0  
SC[3:0]  
These bits select the targeted next state while in State 2, based upon the match event.  
Table 348. State2 —sequencer next state selection  
SC[3:0]  
0000  
0001  
0010  
0011  
0100  
0101  
0110  
0111  
Description (unspecified matches have no effect)  
Match0 to State1....... Match2 to State3.  
Match1 to State3  
Match2 to State3  
Match1 to State3....... Match0 Final State  
Match1 to State1....... Match2 to State3.  
Match2 to Final State  
Match2 to State1..... Match0 to Final State  
Either Match0 or Match1 to Final State  
Reserved  
1000  
1001  
1010  
1011  
Reserved  
Reserved  
Reserved  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
231/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 348. State2 —sequencer next state selection (continued)  
SC[3:0]  
1100  
Description (unspecified matches have no effect)  
Either Match0 or Match1 to Final State........Match2 to State3  
Reserved  
1101  
1110  
Reserved  
1111  
Either Match0 or Match1 to Final State........Match2 to State1  
The priorities described in Table 378 dictate that in the case of simultaneous matches, a match leading to final state has priority followed  
by the match on the lower channel number (0,1,2).  
4.20.3.2.7.3 Debug state control register 3 (DBGSCR3)  
Table 349. Debug state control register 3 (DBGSCR3)  
Address: 0x0027  
7
0
6
0
5
0
4
0
3
SC3  
0
2
SC2  
0
1
SC1  
0
0
SC0  
0
R
W
Reset  
0
0
0
0
= Unimplemented or Reserved  
Read: If COMRV[1:0] = 10  
Write: If COMRV[1:0] = 10 and DBG is not armed  
This register is visible at 0x0027 only with COMRV[1:0] = 10. The state control register three selects the targeted next state while in State  
3. The matches refer to the match channels of the comparator match control logic, as depicted in Figure 63 and described in  
Section 4.20.3.2.8.1, “Debug comparator control register (DBGXCTL)". Comparators must be enabled by setting the comparator enable  
bit in the associated DBGXCTL control register.  
Table 350. DBGSCR3 field descriptions  
Field  
Description  
3–0  
SC[3:0]  
These bits select the targeted next state while in State 3, based upon the match event.  
Table 351. State3 — sequencer next state selection  
SC[3:0]  
0000  
0001  
0010  
0011  
0100  
0101  
0110  
0111  
Description (Unspecified matches have no effect)  
Match0 to State1  
Match2 to State2........ Match1 to Final State  
Match0 to Final State....... Match1 to State1  
Match1 to Final State....... Match2 to State1  
Match1 to State2  
Match1 to Final State  
Match2 to State2........ Match0 to Final State  
Match0 to Final State  
1000  
1001  
1010  
Reserved  
Reserved  
Either Match1 or Match2 to State1....... Match0 to Final State  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
232/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 351. State3 — sequencer next state selection (continued)  
SC[3:0]  
1011  
1100  
1101  
1110  
Description (Unspecified matches have no effect)  
Reserved  
Reserved  
Either Match1 or Match2 to Final State....... Match0 to State1  
Match0 to State2....... Match2 to Final State  
Reserved  
1111  
The priorities described in Table 378 dictate that in the case of simultaneous matches, a match leading to final state has priority, followed  
by the match on the lower channel number (0,1,2).  
4.20.3.2.7.4 Debug match flag register (DBGMFR)  
Table 352. Debug match flag register (DBGMFR)  
Address: 0x0027  
7
0
6
0
5
0
4
0
3
0
2
1
0
R
W
MC2  
MC1  
MC0  
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: If COMRV[1:0] = 11  
Write: Never  
DBGMFR is visible at 0x0027 only with COMRV[1:0] = 11. It features 3 flag bits, each mapped directly to a channel. Should a match occur  
on the channel during the debug session, then the corresponding flag is set and remains set until the next time the module is armed, by  
writing to the ARM bit. Thus the contents are retained after a debug session for evaluation purposes. These flags cannot be cleared by  
software. They are cleared only when arming the module. A set flag does not inhibit the setting of other flags. Once a flag is set, further  
comparator matches on the same channel in the same session have no affect on that flag.  
4.20.3.2.8  
Comparator register descriptions  
Each comparator has a bank of registers that are visible through an 8-byte window in the DBG module register address map. Comparator  
A consists of 8 register bytes (3 address bus compare registers, two data bus compare registers, two data bus mask registers, and a  
control register). Comparator B consists of four register bytes (three address bus compare registers and a control register). Comparator  
C consists of four register bytes (three address bus compare registers and a control register).  
Each set of comparator registers can be accessed using the COMRV bits in the DBGC1 register. Unimplemented registers (e.g.  
Comparator B data bus and data bus masking) read as zero and cannot be written. The control register for comparator B differs from those  
of comparators A and C.  
Table 353. Comparator register layout  
0x0028  
0x0029  
0x002A  
0x002B  
0x002C  
0x002D  
0x002E  
0x002F  
CONTROL  
ADDRESS HIGH  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Comparators A,B and C  
Comparators A,B and C  
Comparators A,B and C  
Comparators A,B and C  
Comparator A only  
ADDRESS MEDIUM  
ADDRESS LOW  
DATA HIGH COMPARATOR  
DATA LOW COMPARATOR  
DATA HIGH MASK  
Comparator A only  
Comparator A only  
DATA LOW MASK  
Comparator A only  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
233/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.3.2.8.1 Debug comparator control register (DBGXCTL)  
The contents of register bits 7 and 6 differ, depending upon which comparator registers are visible in the 8-byte window of the DBG module  
register address map.  
Table 354. Debug comparator control register DBGACTL (comparator A)  
Address: 0x0028  
7
SZE  
0
6
SZ  
0
5
4
BRK  
0
3
RW  
0
2
RWE  
0
1
NDB  
0
0
COMPE  
0
R
W
TAG  
Reset  
0
= Unimplemented or Reserved  
Table 355. Debug comparator control register DBGBCTL (comparator B)  
Address: 0x0028  
7
SZE  
0
6
SZ  
0
5
4
BRK  
0
3
RW  
0
2
RWE  
0
1
0
0
COMPE  
0
R
W
TAG  
Reset  
0
0
= Unimplemented or Reserved  
Table 356. Debug comparator control register DBGCCTL (comparator C)  
Address: 0x0028  
7
0
6
0
5
4
BRK  
0
3
RW  
0
2
RWE  
0
1
0
0
COMPE  
0
R
W
TAG  
Reset  
0
0
0
0
= Unimplemented or Reserved  
Read: DBGACTL if COMRV[1:0] = 00  
DBGBCTL if COMRV[1:0] = 01  
DBGCCTL if COMRV[1:0] = 10  
Write: DBGACTL if COMRV[1:0] = 00 and DBG not armed  
DBGBCTL if COMRV[1:0] = 01 and DBG not armed  
DBGCCTL if COMRV[1:0] = 10 and DBG not armed  
Table 357. DBGXCTL field descriptions  
Field  
Description  
7
Size Comparator Enable Bit — The SZE bit controls whether access size comparison is enabled for the associated comparator.  
This bit is ignored if the TAG bit in the same register is set.  
SZE  
0
1
Word/Byte access size is not used in comparison  
Word/Byte access size is used in comparison  
(Comparators  
A and B)  
6
Size Comparator Value Bit — The SZ bit selects either word or byte access size in comparison for the associated comparator. This  
bit is ignored if the SZE bit is cleared or if the TAG bit in the same register is set.  
SZ  
0
1
Word access size is compared  
Byte access size is compared  
(Comparators  
A and B)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
234/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 357. DBGXCTL field descriptions (continued)  
Field  
Description  
Tag Select— This bit controls whether the comparator match has immediate effect, causing an immediate state sequencer transition  
or tag the opcode at the matched address. Tagged opcodes trigger only if they reach the execution stage of the instruction queue.  
5
0
1
Allow state sequencer transition immediately on match  
On match, tag the opcode. If the opcode is about to be executed allow a state sequencer transition  
TAG  
Break— This bit controls whether a comparator match terminates a debug session immediately, independent of state sequencer  
state. To generate an immediate breakpoint the module breakpoints must be enabled using the DBGC1 bit DBGBRK.  
4
BRK  
0
1
The debug session termination is dependent upon the state sequencer and trigger conditions.  
A match on this channel terminates the debug session immediately; breakpoints if active are generated, tracing, if active, is  
terminated and the module disarmed.  
Read/Write Comparator Value Bit — The RW bit controls whether read or write is used in compare for the associated comparator.  
The RW bit is not used if RWE = 0. This bit is ignored if the TAG bit in the same register is set.  
3
RW  
0
Write cycle is matched1Read cycle is matched  
Read/Write Enable Bit — The RWE bit controls whether read or write comparison is enabled for the associated comparator.This bit  
is ignored if the TAG bit in the same register is set  
2
0
1
Read/Write is not used in comparison  
Read/Write is used in comparison  
RWE  
Not Data Bus — The NDB bit controls whether the match occurs when the data bus matches the comparator register value or when  
the data bus differs from the register value. This bit is ignored if the TAG bit in the same register is set. This bit is only available for  
comparator A.  
1
NDB  
(Comparator A)  
0
1
Match on data bus equivalence to comparator register contents  
Match on data bus difference to comparator register contents  
Determines if comparator is enabled  
0
0
1
The comparator is not enabled  
The comparator is enabled  
COMPE  
Table 358 shows the effect for RWE and RW on the comparison conditions. These bits are ignored if the corresponding TAG bit is set,  
since the match occurs based on the tagged opcode reaching the execution stage of the instruction queue.  
Table 358. Read or write comparison logic table  
RWE bit  
RW bit  
RW signal  
Comment  
RW not used in comparison  
RW not used in comparison  
Write data bus  
0
0
1
1
1
1
x
x
0
0
1
1
0
1
0
1
0
1
No match  
No match  
Read data bus  
4.20.3.2.8.2 Debug comparator address high register (DBGXAH)  
Table 359. Debug comparator address high register (DBGXAH)  
Address: 0x0029  
7
0
6
0
5
0
4
0
3
0
2
0
1
Bit 17  
0
0
Bit 16  
0
R
W
Reset  
0
0
0
0
0
0
= Unimplemented or Reserved  
The DBGC1_COMRV bits determine which comparator address registers are visible in the 8-byte window from 0x0028 to 0x002F, as  
shown in Table 360  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
235/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 360. Comparator address register visibility  
COMRV  
00  
Visible comparator  
DBGAAH, DBGAAM, DBGAAL  
DBGBAH, DBGBAM, DBGBAL  
DBGCAH, DBGCAM, DBGCAL  
None  
01  
10  
11  
Notes  
256. Read: Anytime. See Table for visible register encoding.  
Write: If DBG not armed. See Table for visible register encoding.  
Table 361. DBGXAH field descriptions  
Field  
Description  
Comparator Address High Compare Bits — The Comparator address high compare bits control whether the selected comparator  
compares the address bus bits [17:16] to a logic one or logic zero.  
1–0  
0
1
Compare corresponding address bit to a logic zero  
Compare corresponding address bit to a logic one  
Bit[17:16]  
4.20.3.2.8.3 Debug comparator address mid register (DBGXAM)  
Table 362. Debug comparator address mid register (DBGXAM)  
Address: 0x002A  
7
Bit 15  
0
6
Bit 14  
0
5
Bit 13  
0
4
Bit 12  
0
3
Bit 11  
0
2
Bit 10  
0
1
Bit 9  
0
0
Bit 8  
0
R
W
Reset  
Read: Anytime. See Table 360 for visible register encoding.  
Write: If DBG not armed. See Table 360 for visible register encoding.  
Table 363. DBGXAM field descriptions  
Field  
Description  
Comparator Address Mid Compare Bits — The Comparator address mid compare bits control whether the selected comparator  
compares the address bus bits [15:8] to a logic one or logic zero.  
7–0  
0
1
Compare corresponding address bit to a logic zero  
Compare corresponding address bit to a logic one  
Bit[15:8]  
4.20.3.2.8.4 Debug comparator address low register (DBGXAL)  
Table 364. Debug comparator address low register (DBGXAL)  
Address: 0x002B  
7
Bit 7  
0
6
Bit 6  
0
5
Bit 5  
0
4
Bit 4  
0
3
Bit 3  
0
2
Bit 2  
0
1
Bit 1  
0
0
Bit 0  
0
R
W
Reset  
Read: Anytime. See Table for visible register encoding  
Write: If DBG not armed. See Table for visible register encoding  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
236/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 365. DBGXAL field descriptions  
Field  
Description  
Comparator Address Low Compare Bits — The Comparator address low compare bits control whether the selected comparator  
compares the address bus bits [7:0] to a logic one or logic zero.  
7–0  
0
1
Compare corresponding address bit to a logic zero  
Compare corresponding address bit to a logic one  
Bits[7:0]  
4.20.3.2.8.5 Debug comparator data high register (DBGADH)  
Table 366. Debug comparator data high register (DBGADH)  
Address: 0x002C  
7
Bit 15  
0
6
Bit 14  
0
5
Bit 13  
0
4
Bit 12  
0
3
Bit 11  
0
2
Bit 10  
0
1
Bit 9  
0
0
Bit 8  
0
R
W
Reset  
Read: If COMRV[1:0] = 00  
Write: If COMRV[1:0] = 00 and DBG not armed  
Table 367. DBGADH field descriptions  
Field  
Description  
Comparator Data High Compare Bits— The Comparator data high compare bits control whether the selected comparator compares  
the data bus bits [15:8] to a logic one or logic zero. The comparator data compare bits are only used in comparison if the corresponding  
data mask bit is logic 1. This register is available only for comparator A. Data bus comparisons are only performed if the TAG bit in  
DBGACTL is clear.  
7–0  
Bits[15:8]  
0
1
Compare corresponding data bit to a logic zero  
Compare corresponding data bit to a logic one  
4.20.3.2.8.6 Debug comparator data low register (DBGADL)  
Table 368. Debug comparator data low register (DBGADL)  
Address: 0x002D  
7
Bit 7  
0
6
Bit 6  
0
5
Bit 5  
0
4
Bit 4  
0
3
Bit 3  
0
2
Bit 2  
0
1
Bit 1  
0
0
Bit 0  
0
R
W
Reset  
Read: If COMRV[1:0] = 00  
Write: If COMRV[1:0] = 00 and DBG not armed  
Table 369. DBGADL field descriptions  
Field  
Description  
Comparator Data Low Compare Bits — The Comparator data low compare bits control, whether the selected comparator compares  
the data bus bits [7:0] to a logic one or a logic zero. The comparator data compare bits are only used in comparison if the corresponding  
data mask bit is a logic 1. This register is available only for comparator A. Data bus comparisons are only performed if the TAG bit in  
DBGACTL is clear  
7–0  
Bits[7:0]  
0
1
Compare corresponding data bit to a logic zero  
Compare corresponding data bit to a logic one  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
237/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.3.2.8.7 Debug comparator data high mask register (DBGADHM)  
Table 370. Debug comparator data high mask register (DBGADHM)  
Address: 0x002E  
7
Bit 15  
0
6
Bit 14  
0
5
Bit 13  
0
4
Bit 12  
0
3
Bit 11  
0
2
Bit 10  
0
1
Bit 9  
0
0
Bit 8  
0
R
W
Reset  
Read: If COMRV[1:0] = 00  
Write: If COMRV[1:0] = 00 and DBG not armed  
Table 371. DBGADHM field descriptions  
Field  
Description  
Comparator Data High Mask Bits — The Comparator data high mask bits control whether the selected comparator compares the data  
bus bits [15:8] to the corresponding comparator data compare bits. Data bus comparisons are only performed if the TAG bit in DBGACTL  
is clear  
7–0  
Bits[15:8]  
0
1
Do not compare corresponding data bit Any value of corresponding data bit allows match.  
Compare corresponding data bit  
4.20.3.2.8.8 Debug comparator data low mask register (DBGADLM)  
Table 372. Debug comparator data low mask register (DBGADLM)  
Address: 0x002F  
7
Bit 7  
0
6
Bit 6  
0
5
Bit 5  
0
4
Bit 4  
0
3
Bit 3  
0
2
Bit 2  
0
1
Bit 1  
0
0
Bit 0  
0
R
W
Reset  
Read: If COMRV[1:0] = 00  
Write: If COMRV[1:0] = 00 and DBG not armed  
Table 373. DBGADLM field descriptions  
Field  
Description  
Comparator Data Low Mask Bits — The Comparator data low mask bits control whether the selected comparator compares the data  
bus bits [7:0] to the corresponding comparator data compare bits. Data bus comparisons are only performed if the TAG bit in DBGACTL  
is clear  
7–0  
Bits[7:0]  
0
1
Do not compare corresponding data bit. Any value of corresponding data bit allows match  
Compare corresponding data bit  
4.20.4 Functional description  
This section provides a complete functional description of the DBG module. If the part is in secure mode, the DBG module can generate  
breakpoints, but tracing is not possible.  
4.20.4.1 9S12I128PIMV1 operation  
Arming the DBG module by setting ARM in DBGC1 allows triggering the state sequencer, storing of data in the trace buffer, and generation  
of breakpoints to the CPU. The DBG module is made up of four main blocks, the comparators, control logic, the state sequencer, and the  
trace buffer.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
238/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The comparators monitor the bus activity of the CPU. All comparators can be configured to monitor address bus activity. Comparator A  
can also be configured to monitor data bus activity and mask out individual data bus bits during a compare. Comparators can be configured  
to use R/W and word/byte access qualification in the comparison. A match with a comparator register value can initiate a state sequencer  
transition to another state (see Figure 65). Either forced or tagged matches are possible. Using a forced match, a state sequencer  
transition can occur immediately on a successful match of system busses and comparator registers. While tagging at a comparator match,  
the instruction opcode is tagged, and only if the instruction reaches the execution stage of the instruction queue, can a state sequencer  
transition occur. In the case of a transition to Final state, bus tracing is triggered, and/or a breakpoint can be generated.  
A state sequencer transition to final state (with associated breakpoint, if enabled) can be initiated by writing to the TRIG bit in the DBGC1  
control register. The trace buffer is visible through a 2-byte window in the register address map and must be read out using standard 16-bit  
word reads.  
TAGS  
TAGHITS  
BREAKPOINT REQUESTS  
TO CPU  
SECURE  
CPU BUS  
TRANSITION  
MATCH0  
MATCH1  
MATCH2  
COMPARATOR A  
COMPARATOR B  
COMPARATOR C  
TAG &  
MATCH  
CONTROL  
LOGIC  
STATE SEQUENCER  
STATE  
TRACE  
CONTROL  
TRIGGER  
TRACE BUFFER  
READ TRACE DATA (DBG READ DATA BUS)  
Figure 64. DBG overview  
4.20.4.2 Comparator modes  
The DBG contains three comparators, A, B and C. Each comparator compares the system address bus with the address stored in  
DBGXAH, DBGXAM, and DBGXAL. Furthermore, comparator A also compares the data buses to the data stored in DBGADH, DBGADL  
and allows masking of individual data bus bits.  
All comparators are disabled in BDM and during BDM accesses. The comparator match control logic (see Figure 64) configures  
comparators to monitor the buses for an exact address or an address range, whereby either an access inside or outside the specified  
range generates a match condition. The comparator configuration is controlled by the control register contents and the range control by  
the DBGC2 contents.  
Amatch can initiate a transition to another state sequencer state (see Section 4.20.4.4, “State sequence control"”). The comparator control  
register also allows the type of access to be included in the comparison through the use of the RWE, RW, SZE, and SZ bits. The RWE bit  
controls whether read or write comparison is enabled for the associated comparator and the RW bit selects either a read or write access  
for a valid match. Similarly the SZE and SZ bits allow the size of access (word or byte) to be considered in the compare. Only comparators  
A and B feature SZE and SZ.  
The TAG bit in each comparator control register is used to determine the match condition. By setting TAG, the comparator qualifies a match  
with the output of opcode tracking logic, and a state sequencer transition occurs when the tagged instruction reaches the CPU execution  
stage. While tagging, the RW, RWE, SZE, and SZ bits and the comparator data registers are ignored; the comparator address register  
must be loaded with the exact opcode address.  
If the TAG bit is clear (forced type match), a comparator match is generated when the selected address appears on the system address  
bus. If the selected address is an opcode address, the match is generated when the opcode is fetched from the memory, which precedes  
the instruction execution by an indefinite number of cycles due to instruction pipelining. For a comparator match of an opcode at an odd  
address when TAG = 0, the corresponding even address must be contained in the comparator register. Thus for an opcode at odd address  
(n), the comparator register must contain address (n–1).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
239/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Once a successful comparator match has occurred, the condition that caused the original match is not verified again on subsequent  
matches. If a particular data value is verified at a given address, this address may not still contain that data value when a subsequent  
match occurs.  
Match[0, 1, 2] map directly to Comparators [A, B, C] respectively, except in range modes (see Section 4.20.3.2.4, “Debug control register2  
(DBGC2)"). Comparator channel priority rules are described in the priority section (Section 4.20.4.3.4, “Channel priorities").  
4.20.4.2.1  
Single address comparator match  
With range comparisons disabled, the match condition is an exact equivalence of address bus, with the value stored in the comparator  
address registers. Further qualification of the type of access (R/W, word/byte) and data bus contents is possible, depending on comparator  
channel.  
4.20.4.2.1.1 Comparator C  
Comparator C offers only address and direction (R/W) comparison. The exact address is compared, with the comparator address register  
loaded with address (n), a word access of address (n–1) also accesses (n) but does not cause a match.  
Table 374. Comparator C access considerations  
Condition for valid match  
Comp C address  
RWE  
RW  
Examples  
LDAA ADDR[n]  
STAA #$BYTE ADDR[n]  
(257)  
Read and write accesses of ADDR[n]  
ADDR[n]  
0
X
Write accesses of ADDR[n]  
Read accesses of ADDR[n]  
ADDR[n]  
ADDR[n]  
1
1
0
1
STAA #$BYTE ADDR[n]  
LDAA #$BYTE ADDR[n]  
Notes  
257. A word access of ADDR[n-1] also accesses ADDR[n] but does not generate a match. The comparator address register must contain the exact  
address from the code.  
4.20.4.2.1.2 Comparator B  
Comparator B offers address, direction (R/W) and access size (word/byte) comparison. If the SZE bit is set, the access size (word or byte)  
is compared with the SZ bit value such that only the specified size of access causes a match. If configured for a byte access of a particular  
address, a word access covering the same address does not lead to match.  
Assuming the access direction is not qualified (RWE=0), for simplicity, the size access considerations are shown in Table 375.  
Table 375. Comparator B access size considerations  
Condition for valid match  
Comp B address  
RWE  
SZE  
SZ8  
Examples  
MOVB #$BYTE ADDR[n]  
MOVW #$WORD ADDR[n]  
(258)  
Word and byte accesses of ADDR[n]  
ADDR[n]  
0
0
X
MOVW #$WORD ADDR[n]  
LDD ADDR[n]  
Word accesses of ADDR[n] only  
Byte accesses of ADDR[n] only  
ADDR[n]  
ADDR[n]  
0
0
1
1
0
1
MOVB #$BYTE ADDR[n]  
LDAB ADDR[n]  
Notes  
258. A word access of ADDR[n-1] also accesses ADDR[n] but does not generate a match. The comparator address register must contain the exact  
address from the code.  
Access direction can also be used to qualify a match for Comparator B in the same way, as described for Comparator C in Table 374.  
4.20.4.2.1.3 Comparator A  
Comparator A offers address, direction (R/W), access size (word/byte), and data bus comparison. Table 376 lists access considerations  
with data bus comparison. On word accesses, the data byte of the lower address is mapped to DBGADH. Access direction can also be  
used to qualify a match for Comparator A in the same way as described for Comparator C in Table 374.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
240/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 376. Comparator A matches when accessing ADDR[n]  
DBGADHM,  
SZE  
SZ  
Access DH=DBGADH, DL=DBGADL  
Comment  
No databus comparison  
Match data(ADDR[n])  
DBGADLM  
Byte  
Word  
0
X
$0000  
Byte, data(ADDR[n])=DH  
Word, data(ADDR[n])=DH, data(ADDR[n+1])=X  
0
X
$FF00  
0
0
0
0
1
1
1
1
1
1
X
X
X
X
0
0
0
0
1
1
$00FF  
$00FF  
$FFFF  
$FFFF  
$0000  
$00FF  
$FF00  
$FFFF  
$0000  
$FF00  
Word, data(ADDR[n])=X, data(ADDR[n+1])=DL  
Byte, data(ADDR[n])=X, data(ADDR[n+1])=DL  
Word, data(ADDR[n])=DH, data(ADDR[n+1])=DL  
Byte, data(ADDR[n])=DH, data(ADDR[n+1])=DL  
Word  
Match data(ADDR[n+1])  
Possible unintended match  
Match data(ADDR[n], ADDR[n+1])  
Possible unintended match  
No databus comparison  
Word, data(ADDR[n])=X, data(ADDR[n+1])=DL  
Word, data(ADDR[n])=DH, data(ADDR[n+1])=X  
Word, data(ADDR[n])=DH, data(ADDR[n+1])=DL  
Byte  
Match only data at ADDR[n+1]  
Match only data at ADDR[n]  
Match data at ADDR[n] & ADDR[n+1]  
No databus comparison  
Byte, data(ADDR[n])=DH  
Match data at ADDR[n]  
4.20.4.2.1.4 Comparator A data bus comparison NDB dependency  
Comparator A features an NDB control bit, which allows data bus comparators to be configured to either trigger on equivalence or trigger  
on difference. This allows monitoring of a difference in the contents of an address location from an expected value.  
When matching on an equivalence (NDB=0), each individual data bus bit position can be masked out by clearing the corresponding mask  
bit (DBGADHM/DBGADLM) so that it is ignored in the comparison. A match occurs when all data bus bits with corresponding mask bits  
set are equivalent. If all mask register bits are clear, then a match is based on the address bus only, the data bus is ignored.  
When matching on a difference, mask bits can be cleared to ignore bit positions. Amatch occurs when any data bus bit with corresponding  
mask bit set is different. Clearing all mask bits causes all bits to be ignored and prevents a match because no difference can be detected.  
In this case, address bus equivalence does not cause a match.  
Table 377. NDB and MASK bit dependency  
DBGADHM[n] /  
NDB  
Comment  
DBGADLM[n]  
0
0
1
1
0
1
0
1
Do not compare data bus bit.  
Compare data bus bit. Match on equivalence.  
Do not compare data bus bit.  
Compare data bus bit. Match on difference.  
4.20.4.2.2  
Range comparisons  
Using the AB comparator pair for a range comparison, the data bus can also be used for qualification by using the comparator A data  
registers. Furthermore, the DBGACTL RW and RWE bits can be used to qualify the range comparison on either a read or a write access.  
The corresponding DBGBCTL bits are ignored. The SZE and SZ control bits are ignored in range mode. The comparator ATAG bit is used  
to tag range comparisons. The comparator B TAG bit is ignored in range modes. For a range comparison using comparators A and B,  
both COMPEA and COMPEB must be set; to disable range comparisons both must be cleared. The comparator A BRK bit is used to for  
the AB range, the comparator B BRK bit is ignored in range mode.  
When configured for range comparisons and tagging, the ranges are accurate only to word boundaries.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
241/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.4.2.2.1 Inside range (CompA_Addr address CompB_Addr)  
In the Inside Range comparator mode, comparator pair A and B can be configured for range comparisons. This configuration depends  
upon the control register (DBGC2). The match condition requires that a valid match for both comparators happens on the same bus cycle.  
A match condition on only one comparator is not valid. An aligned word access which straddles the range boundary is valid only if the  
aligned address is inside the range.  
4.20.4.2.2.2 Outside range (address < CompA_Addr or address > CompB_Addr)  
In the Outside Range comparator mode, comparator pair A and B can be configured for range comparisons. A single match condition on  
either of the comparators is recognized as valid. An aligned word access which straddles the range boundary is valid, only if the aligned  
address is outside the range.  
Outside range mode in combination with tagging can be used to detect, if the opcode fetches are from an unexpected range. In forced  
match mode, the outside range match would typically be activated at any interrupt vector fetch or register access. This can be avoided by  
setting the upper range limit to $3FFFF or lower range limit to $00000 respectively.  
4.20.4.3 Match modes (forced or tagged)  
Match modes are used as qualifiers for a state sequencer change of state. The Comparator control register TAG bits select the match  
mode. The modes are described in the following sections.  
4.20.4.3.1  
Forced match  
When configured for forced matching, a comparator channel match can immediately initiate a transition to the next state sequencer state,  
whereby the corresponding flags in DBGSR are set. The state control register for the current state determines the next state. Forced  
matches are typically generated 2-3 bus cycles after the final matching address bus cycle, independent of comparator RWE/RW settings.  
Furthermore, since opcode fetches occur several cycles before the opcode execution, a forced match of an opcode address typically  
precedes a tagged match at the same address.  
4.20.4.3.2  
Tagged match  
If a CPU taghit occurs, a transition to another state sequencer state is initiated and the corresponding DBGSR flags are set. For a  
comparator related taghit to occur, the DBG must first attach tags to instructions as they are fetched from memory. When the tagged  
instruction reaches the execution stage of the instruction queue, a taghit is generated by the CPU. This can initiate a state sequencer  
transition.  
4.20.4.3.3  
Immediate trigger  
Independent of comparator matches, it is possible to initiate a tracing session and/or breakpoint by writing to the TRIG bit in DBGC1. If  
configured for begin aligned tracing, this triggers the state sequencer into the Final state, if configured for end alignment, setting the TRIG  
bit disarms the module, ending the session and issues a forced breakpoint request to the CPU.  
It is possible to set both TRIG and ARM simultaneously to generate an immediate trigger, independent of the current state of ARM.  
4.20.4.3.4  
Channel priorities  
In case of simultaneous matches, the priority is resolved according to Table 378. The lower priority is suppressed. It is possible to miss a  
lower priority match, if it occurs simultaneously with a higher priority. The priorities described in Table 378 dictate that in the case of  
simultaneous matches, the match pointing to Final state has highest priority, followed by the lower channel number (0,1,2).  
Table 378. Channel priorities  
Priority  
Source  
Action  
Highest  
TRIG  
Enter Final State  
Channel pointing to Final State  
Match0 (force or tag hit)  
Match1 (force or tag hit)  
Match2 (force or tag hit)  
Transition to next state as defined by state control registers  
Transition to next state as defined by state control registers  
Transition to next state as defined by state control registers  
Transition to next state as defined by state control registers  
Lowest  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
242/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.4.4 State sequence control  
ARM = 0  
ARM = 1  
State 0  
(Disarmed)  
ARM = 0  
State1  
State2  
Session Complete  
(Disarm)  
State3  
Final State  
ARM = 0  
Figure 65. State sequencer diagram  
The state sequencer allows a defined sequence of events to provide a trigger point for tracing of data in the trace buffer. Once the DBG  
module has been armed by setting the ARM bit in the DBGC1 register, the state 1 of the state sequencer is entered. Further transitions  
between the states are then controlled by the state control registers and channel matches. From Final state, the only permitted transition  
is back to the disarmed state 0. Transition between any of the states 1 to 3 is not restricted. Each transition updates the SSF[2:0] flags in  
DBGSR accordingly to indicate the current state. Alternatively, writing to the TRIG bit in DBGSC1, provides an immediate trigger  
independent of comparator matches.  
Independent of the state sequencer, each comparator channel can be individually configured to generate an immediate breakpoint when  
a match occurs, through the use of the BRK bits in the DBGxCTL registers. It is possible to generate an immediate breakpoint on selected  
channels, while a state sequencer transition can be initiated by a match on other channels. If a debug session is ended by a match on a  
channel, the state sequencer transitions through Final state for a clock cycle to state 0. This is independent of tracing and breakpoint  
activity, and with tracing and breakpoints disabled, the state sequencer enters state 0 and the debug module is disarmed.  
4.20.4.4.1  
Final state  
On entering Final state, a trigger may be issued to the trace buffer according to the trace alignment control, as defined by the TALIGN bit  
(see Section 4.20.3.2.3, “Debug trace control register (DBGTCR)"”). If the TSOURCE bit in DBGTCR is clear, then the trace buffer is  
disabled and the transition to Final state can only generate a breakpoint request. In this case or upon completion of a tracing session when  
tracing is enabled, the ARM bit in the DBGC1 register is cleared, returning the module to the disarmed state 0. If tracing is enabled, a  
breakpoint request can occur at the end of the tracing session. If neither tracing nor breakpoints are enabled, when the final state is  
reached, it returns automatically to state 0 and the debug module is disarmed.  
4.20.4.5 Trace buffer operation  
The trace buffer is a 64 lines deep by 20-bits wide RAM array. The DBG module stores trace information in the RAM array in a circular  
buffer format. The system accesses the RAM array through a register window (DBGTBH:DBGTBL) using 16-bit wide word accesses. After  
each complete 20-bit trace buffer line is read, an internal pointer into the RAM increments so that the next read receives fresh information.  
Data is stored in the format shown in Table 379 and Table 375. After each store the counter register DBGCNT is incremented. Tracing of  
CPU activity is disabled when the BDM is active. Reading the trace buffer while the DBG is armed, returns invalid data and the trace buffer  
pointer is not incremented.  
4.20.4.5.1  
Trace trigger alignment  
Using the TALIGN bit (see Section 4.20.3.2.3, “Debug trace control register (DBGTCR)"), it is possible to align the trigger with the end or  
the beginning of a tracing session.  
If End tracing is selected, tracing begins when the ARM bit in DBGC1 is set and State1 is entered; the transition to Final state signals the  
end of the tracing session. Tracing with Begin Trigger starts at the opcode of the trigger. Using End Trigger or when the tracing is initiated  
by writing to the TRIG bit while configured for Begin Trigger, tracing starts in the second cycle after the DBGC1 write cycle.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
243/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.4.5.1.1 Storing with begin trigger  
Storing with Begin Trigger, data is not stored in the Trace Buffer until the Final state is entered. Once the trigger condition is met, the DBG  
module remains armed until 64 lines are stored in the Trace Buffer. If the trigger is at the address of the change-of-flow instruction, the  
change of flow associated with the trigger is stored in the Trace Buffer. Using Begin Trigger together with tagging, if the tagged instruction  
is about to be executed, then the trace is started. Upon completion of the tracing session, the breakpoint is generated, thus the breakpoint  
does not occur at the tagged instruction boundary.  
4.20.4.5.1.2 Storing with end trigger  
Storing with End Trigger, data is stored in the Trace Buffer until the Final State is entered, at which point the DBG module becomes  
disarmed and no more data is stored. If the trigger is at the address of a change of flow instruction, the trigger event is not stored in the  
Trace Buffer.  
4.20.4.5.2  
Trace modes  
Four trace modes are available. The mode is selected using the TRCMOD bits in the DBGTCR register. Tracing is enabled using the  
TSOURCE bit in the DBGTCR register. The modes are described in the following subsections.  
4.20.4.5.2.1 Normal mode  
In Normal mode, change of flow (COF) program counter (PC) addresses are stored.  
COF addresses are defined as follows:  
Source address of taken conditional branches (long, short, bit-conditional, and loop primitives)  
Destination address of indexed JMP, JSR, and CALL instruction  
Destination address of RTI, RTS, and RTC instructions  
Vector address of interrupts, except for BDM vectors  
LBRA, BRA, BSR, BGND, as well as non-indexed JMP, JSR, and CALL instructions are not classified as change of flow and are not stored  
in the trace buffer.  
Stored information includes the full 18-bit address bus and information bits, which contains a source/destination bit to indicate whether the  
stored address was a source address or destination address.  
NOTE  
When a COF instruction with destination address is executed, the destination address is stored to the  
trace buffer on instruction completion, indicating the COF has taken place. If an interrupt occurs  
simultaneously, then the next instruction carried out is actually from the interrupt service routine. The  
instruction at the destination address of the original program flow gets executed after the interrupt  
service routine.  
In the following example, an IRQ interrupt occurs during execution of the indexed JMP at address  
MARK1. The BRN at the destination (SUB_1) is not executed until after the IRQ service routine, but  
the destination address is entered into the trace buffer to indicate that the indexed JMP COF has  
taken place.  
LDX  
JMP  
NOP  
#SUB_1  
0,X  
MARK1  
MARK2  
; IRQ interrupt occurs during execution of this  
;
SUB_1  
ADDR1  
BRN  
*
; JMP Destination address TRACE BUFFER ENTRY 1  
; RTI Destination address TRACE BUFFER ENTRY 3  
;
NOP  
DBNE  
A,PART5  
; Source address TRACE BUFFER ENTRY 4  
IRQ_ISR LDAB  
#$F0  
VAR_C1  
; IRQ Vector $FFF2 = TRACE BUFFER ENTRY 2  
;
STAB  
RTI  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
244/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The execution flow taking into account the IRQ is as follows  
#SUB_1  
0,X  
LDX  
JMP  
IRQ_ISR LDAB  
MARK1  
;
;
#$F0  
STAB  
RTI  
VAR_C1  
;
SUB_1  
ADDR1  
BRN  
NOP  
DBNE  
*
;
;
A,PART5  
4.20.4.5.2.2 Loop1 mode  
Loop1 mode, similarly to Normal mode also stores only COF address information to the trace buffer, it however allows the filtering out of  
redundant information.  
The intent of Loop1 mode is to prevent the Trace Buffer from being filled entirely with duplicate information from a looping construct, such  
as delays using the DBNE instruction or polling loops using BRSET/BRCLR instructions. Immediately after address information is placed  
in the Trace Buffer, the DBG module writes this value into a background register. This prevents consecutive duplicate address entries in  
the Trace Buffer resulting from repeated branches.  
Loop1 mode only inhibits consecutive duplicate source address entries that would typically be stored in most tight looping constructs. It  
does not inhibit repeated entries of destination addresses or vector addresses, since repeated entries of these would most likely indicate  
a bug in the user’s code that the DBG module is designed to help find.  
4.20.4.5.2.3 Detail mode  
In Detail mode, address and data for all memory and register accesses is stored in the trace buffer. This mode is intended to supply  
additional information on indexed, indirect addressing modes where storing only the destination address would not provide all information  
required for a user to determine where the code is in error. This mode also features information bit storage to the trace buffer, for each  
address byte storage. The information bits indicate the size of access (word or byte) and the type of access (read or write).  
When tracing in Detail mode, all cycles are traced except those when the CPU is either in a free or opcode fetch cycle.  
4.20.4.5.2.4 Compressed pure PC mode  
In Compressed Pure PC mode, the PC addresses of all executed opcodes, including where illegal opcodes are stored. A compressed  
storage format is used to increase the effective depth of the trace buffer. This is achieved by storing the lower order bits each time and  
using 2 information bits to indicate if a 64 byte boundary has been crossed, in which case the full PC is stored.  
Each Trace Buffer row consists of 2 information bits and 18 PC address bits  
NOTE:  
When tracing is terminated using forced breakpoints, latency in breakpoint generation means that  
opcodes following the opcode causing the breakpoint can be stored to the trace buffer. The number  
of opcodes is dependent on program flow. This can be avoided by using tagged breakpoints.  
4.20.4.5.3  
Trace buffer organization (normal, loop1, detail modes)  
ADRH, ADRM, ADRL denote address high, middle, and low byte respectively. The numerical suffix refers to the tracing count. The  
information format for Loop1 and Normal modes are identical. In Detail mode, the address and data for each entry are stored on  
consecutive lines, thus the maximum number of entries is 32. In this case, DBGCNT bits are incremented twice, once for the address line,  
and once for the data line, on each trace buffer entry. In Detail mode, CINF comprises of R/W and size access information (CRW and CSZ  
respectively).  
Single byte data accesses in Detail mode are always stored to the low byte of the trace buffer (DATAL) and the high byte is cleared. When  
tracing word accesses, the byte at the lower address is always stored to trace buffer byte1 and the byte at the higher address is stored to  
byte0.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
245/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 379. Trace buffer organization (normal, loop1, detail modes)  
4-bits  
Field 2  
CINF1,ADRH1  
0
8-bits  
Field 1  
ADRM1  
DATAH1  
ADRM2  
DATAH2  
PCM1  
8-bits  
Entry  
Number  
Mode  
Field 0  
ADRL1  
DATAL1  
ADRL2  
DATAL2  
PCL1  
Entry 1  
Entry 2  
Detail Mode  
CINF2,ADRH2  
0
Entry 1  
Entry 2  
PCH1  
Normal/Loop1  
Modes  
PCH2  
PCM2  
PCL2  
4.20.4.5.3.1 Information bit organization  
The format of the bits is dependent upon the active trace mode as described by the following.  
4.20.4.5.3.1.1 Field2 bits in detail mode  
Table 380. Field2 bits in detail mode  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
CSZ  
CRW  
ADDR[17]  
ADDR[16]  
In Detail Mode, the CSZ and CRW bits indicate the type of access being made by the CPU.  
Table 381. Field descriptions  
Bit  
Description  
Access Type Indicator— This bit indicates if the access was a byte or word size when tracing in Detail mode  
3
CSZ  
0
1
Word Access  
Byte Access  
Read Write Indicator — This bit indicates if the corresponding stored address corresponds to a read or write access when tracing in  
Detail mode.  
2
0
1
Write Access  
Read Access  
CRW  
1
Address Bus bit 17— Corresponds to system address bus bit 17.  
Address Bus bit 16— Corresponds to system address bus bit 16.  
ADDR[17]  
0
ADDR[16]  
4.20.4.5.3.1.2 Field2 bits in normal and loop1 modes  
Table 382. Information bits PCH  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
CSD  
CVA  
PC17  
PC16  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
246/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 383. PCH field descriptions  
Bit  
Description  
Source Destination Indicator — In Normal and Loop1 mode, this bit indicates if the corresponding stored address is a source or  
destination address. This bit has no meaning in Compressed Pure PC mode.  
3
0
1
Source Address  
Destination Address  
CSD  
Vector Indicator — In Normal and Loop1 mode, this bit indicates if the corresponding stored address is a vector address. Vector  
addresses are destination addresses, thus if CVA is set, then the corresponding CSD is also set. This bit has no meaning in Compressed  
Pure PC mode.  
2
CVA  
0
1
Non-Vector destination address  
Vector destination address  
1
Program Counter bit 17— In Normal and Loop1 mode, this bit corresponds to program counter bit 17.  
Program Counter bit 16— In Normal and Loop1 mode, this bit corresponds to program counter bit 16.  
PC17  
0
PC16  
4.20.4.5.4  
Trace buffer organization (compressed pure PC mode)  
Table 384. Trace buffer organization example (compressed pure PC mode)  
2-bits  
Field 3  
00  
6-bits  
6-bits  
6-bits  
Line  
Number  
Mode  
Field 2  
Field 1  
Field 0  
Line 1  
Line 2  
Line 3  
Line 4  
Line 5  
Line 6  
PC1 (Initial 18-bit PC Base Address)  
11  
PC4  
0
PC3  
PC2  
PC5  
01  
0
Compressed Pure  
PC Mode  
00  
PC6 (New 18-bit PC Base Address)  
PC8  
10  
0
PC7  
00  
PC9 (New 18-bit PC Base Address)  
4.20.4.5.4.0.1 Field3 bits in compressed pure PC modes  
Table 385. Compressed pure PC mode field 3 information bit encoding  
INF1  
INF0  
TRACE BUFFER ROW CONTENT  
0
0
1
1
0
1
0
1
Base PC address TB[17:0] contains a full PC[17:0] value  
Trace Buffer[5:0] contain incremental PC relative to base address zero value  
Trace Buffer[11:0] contain next 2 incremental PCs relative to base address zero value  
Trace Buffer[17:0] contain next 3 incremental PCs relative to base address zero value  
Each time PC[17:6] differs form the previous base PC[17:6], a new base address is stored. The base address zero value is the lowest  
address in the 64 address range.  
The first line of the trace buffer always gets a base PC address; this applies also on rollover.  
4.20.4.5.5  
Reading data from trace buffer  
The data stored in the Trace Buffer can be read provided the DBG module is not armed, is configured for tracing (TSOURCE bit is set),  
and the system not secured. When the ARM bit is written to 1 the trace buffer, it is locked to prevent reading. The trace buffer can only be  
unlocked for reading by a single aligned word write to DBGTB when the module is disarmed.  
The Trace Buffer can only be read through the DBGTB register using aligned word reads. Any byte or misaligned reads return 0 and does  
not cause the trace buffer pointer to increment to the next trace buffer address. The Trace Buffer data is read out first-in first-out. By  
reading CNT in DBGCNT, the number of valid lines can be determined. DBGCNT does not decrement as data is read.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
247/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
While reading, an internal pointer is used to determine the next line to be read. After a tracing session, the pointer points to the oldest data  
entry. If no overflow has occurred, the pointer points to line 0, otherwise it points to the line with the oldest entry. In compressed Pure PC  
mode on rollover, the line with the oldest data entry may also contain newer data entries in fields 0 and 1. If rollover is indicated by the  
TBF bit, the line status must be decoded using the INF bits in field3 of that line. If both INF bits are clear, the line contains only entries  
from before the last rollover.   
If INF0=1, field 0 contains post rollover data but fields 1 and 2 contain pre rollover data.   
If INF1=1, fields 0 and 1 contain post rollover data but field 2 contains pre rollover data.  
The pointer is initialized by each aligned write to DBGTBH to point to the oldest data again. This enables an interrupted trace buffer read  
sequence to be easily restarted from the oldest data entry.  
The least significant word of line is read out first. This corresponds to the fields 1 and 0 of Table 379. The next word read returns field 2  
in the least significant bits [3:0] and “0” for bits [15:4].  
Reading the Trace Buffer while the DBG module is armed, returns invalid data and no shifting of the RAM pointer occurs.  
4.20.4.5.6  
Trace buffer reset state  
The Trace Buffer contents and DBGCNT bits are not initialized by a system reset. Should a system reset occur, immediately before the  
reset occurred, the trace session information can be read out and the number of valid lines in the trace buffer is indicated by DBGCNT.  
The internal pointer to the current trace buffer address is initialized by unlocking the trace buffer and points to the oldest valid data, even  
if a reset occurred during the tracing session. To read the trace buffer after a reset, TSOURCE must be set, otherwise the trace buffer  
reads as all zeroes. Generally, debugging occurrences of system resets are best handled using end trigger alignment, since the reset may  
occur before the trace trigger, which in the begin trigger alignment case, means no information would be stored in the trace buffer.  
The Trace Buffer contents and DBGCNT bits are undefined following a POR.  
NOTE  
An external pin RESET that occurs simultaneous to a trace buffer entry can, in very few cases, lead  
to either that entry being corrupted, or the first entry of the session being corrupted. In such cases,  
the other contents of the trace buffer still contain valid tracing information. The case occurs when the  
reset assertion coincides with the trace buffer entry clock edge.  
4.20.4.6  
Tagging  
Atag follows program information as it advances through the instruction queue. When a tagged instruction reaches the head of the queue,  
a tag hit occurs and can initiate a state sequencer transition.  
Each comparator control register features a TAG bit, which controls whether the comparator match causes a state sequencer transition  
immediately or tags the opcode at the matched address. If a comparator is enabled for tagged comparisons, the address stored in the  
comparator match address registers must be an opcode address.  
Using Begin Trigger together with tagging, if the tagged instruction is about to be executed, the transition to the next state sequencer state  
occurs. If the transition is to the Final state, tracing is started. Only upon completion of the tracing session can a breakpoint be generated.  
Using End alignment, when the tagged instruction is about to be executed and the next transition is to Final state, a breakpoint is generated  
immediately, before the tagged instruction is carried out.  
R/W monitoring, access size (SZ) monitoring and data bus monitoring are not useful if tagging is selected, since the tag is attached to the  
opcode at the matched address and is not dependent on the data bus nor on ta type of access. These bits are ignored if tagging is selected.  
When configured for range comparisons and tagging, the ranges are accurate only to word boundaries. Tagging is disabled when the BDM  
becomes active.  
4.20.4.7 Breakpoints  
It is possible to generate breakpoints from channel transitions to final state or use software to write to the TRIG bit in the DBGC1 register.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
248/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.4.7.1  
Breakpoints from comparator channels  
Breakpoints can be generated when the state sequencer transitions to the Final state. If configured for tagging, the breakpoint is generated  
when the tagged opcode reaches the execution stage of the instruction queue.  
If a tracing session is selected by the TSOURCE bit, breakpoints are requested when the tracing session has completed. If Begin aligned  
triggering is selected, the breakpoint is requested only on completion of the subsequent trace (see Table 386). If no tracing session is  
selected, breakpoints are requested immediately. If the BRK bit is set, the associated breakpoint is generated immediately independent  
of tracing trigger alignment.  
Table 386. Breakpoint setup for CPU breakpoints  
BRK  
TALIGN  
DBGBRK  
Breakpoint Alignment  
0
0
0
0
0
1
0
1
0
Fill Trace Buffer until trigger then disarm (no breakpoints)  
Fill Trace Buffer until trigger, then breakpoint request occurs  
Start Trace Buffer at trigger (no breakpoints)  
Start Trace Buffer at trigger  
A breakpoint request occurs when Trace Buffer is full  
0
1
1
1
1
x
x
1
0
Terminate tracing and generate breakpoint immediately on trigger  
Terminate tracing immediately on trigger  
4.20.4.7.2  
Breakpoints generated via the TRIG bit  
If a TRIG triggers occur, the Final state is entered, where the tracing trigger alignment is defined by the TALIGN bit. If a tracing session is  
selected by the TSOURCE bit, breakpoints are requested when the tracing session has completed. If Begin aligned triggering is selected,  
the breakpoint is requested only on completion of the subsequent trace (see Table 386). If no tracing session is selected, breakpoints are  
requested immediately. TRIG breakpoints are possible with a single write to DBGC1, setting ARM and TRIG simultaneously.  
4.20.4.7.3  
Breakpoint priorities  
If a TRIG trigger occurs after Begin aligned tracing has already started, then the TRIG no longer has an effect. When the associated tracing  
session is complete, the breakpoint occurs. Similarly, if a TRIG is followed by a subsequent comparator channel match, it has no effect,  
since tracing has already started. If a forced SWI breakpoint coincides with a BGND in user code with BDM enabled, then the BDM is  
activated by the BGND and the breakpoint to SWI is suppressed.  
4.20.4.7.3.1 DBG breakpoint priorities and BDM interfacing  
Breakpoint operation is dependent on the state of the BDM module. If the BDM module is active, the CPU is executing out of BDM  
firmware. Comparator matches and associated breakpoints are disabled. In addition, while executing a BDM TRACE command, tagging  
into BDM is disabled. If BDM is not active, the breakpoint gives priority to BDM requests over SWI requests if the breakpoint happens to  
coincide with a SWI instruction in user code. On returning from BDM, the SWI from user code gets executed.  
Table 387. Breakpoint mapping summary  
DBGBRK  
BDM bit (DBGC1[4])  
BDM enabled  
BDM active  
Breakpoint mapping  
No Breakpoint  
0
1
X
1
1
X
0
X
1
1
X
X
1
0
1
X
0
1
X
0
Breakpoint to SWI  
No Breakpoint  
Breakpoint to SWI  
Breakpoint to BDM  
BDM cannot be entered from a breakpoint unless the ENABLE bit is set in the BDM. If entry to BDM via a BGND instruction is attempted  
and the ENABLE bit in the BDM is cleared, the CPU actually executes the BDM firmware code, checks the ENABLE, and returns if  
ENABLE is not set. If not serviced by the monitor, the breakpoint is re-asserted when the BDM returns to normal CPU flow.  
If the comparator register contents coincide with the SWI/BDM vector address, an SWI in user code could coincide with a DBG breakpoint.  
The CPU ensures that BDM requests have a higher priority than SWI requests. Returning from the BDM/SWI service routine, care must  
be taken to avoid a repeated breakpoint at the same address.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
249/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Should a tagged or forced breakpoint coincide with a BGND in user code, the instruction that follows the BGND instruction is the first  
instruction executed when normal program execution resumes.  
NOTE  
When program control returns from a tagged breakpoint using an RTI or BDM GO command without  
program counter modification, it returns to the instruction whose tag generated the breakpoint. To  
avoid a repeated breakpoint at the same location, reconfigure the DBG module in the SWI routine, if  
configured for an SWI breakpoint, or over the BDM interface by executing a TRACE command before  
the GO, to increment the program flow past the tagged instruction.  
4.20.5 Application information  
4.20.5.1 State machine scenarios  
Defining the state control registers as SCR1,SCR2, SCR3, and M0,M1,M2 as matches on channels 0, 1, 2 respectively. SCR encoding  
supported by S12SDBGV1 are shown in black. SCR encoding supported only in S12SDBGV2 are shown in red. For backwards  
compatibility the new scenarios use a 4th bit in each SCR register. Thus the existing encoding for SCRx[2:0] is not changed.  
4.20.5.2 Scenario 1  
A trigger is generated if a given sequence of 3 code events is executed.  
SCR2=0010  
SCR3=0111  
SCR1=0011  
M0  
M2  
M1  
Final State  
State3  
State2  
State1  
Figure 66. Scenario 1  
Scenario 1 is possible with S12SDBGV1 SCR encoding.  
4.20.5.3 Scenario 2  
A trigger is generated if a given sequence of 2 code events is executed.  
SCR2=0101  
SCR1=0011  
M2  
M1  
Final State  
State2  
State1  
Figure 67. Scenario 2a  
A trigger is generated if a given sequence of 2 code events is executed, whereby the first event is entry into a range (COMPA, COMPB  
configured for range mode). M1 is disabled in range modes.  
SCR2=0101  
SCR1=0111  
M2  
M01  
Final State  
State2  
State1  
Figure 68. Scenario 2b  
A trigger is generated if a given sequence of 2 code events is executed, whereby the second event is entry into a range (COMPA, COMPB  
configured for range mode).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
250/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
SCR2=0011  
SCR1=0010  
M0  
M2  
Final State  
State2  
State1  
Figure 69. Scenario 2c  
All 3 scenarios 2a, 2b, 2c are possible with the S12SDBGV1 SCR encoding.  
4.20.5.4 Scenario 3  
A trigger is generated immediately when one of up to 3 given events occurs.  
SCR1=0000  
M012  
Final State  
State1  
Figure 70. Scenario 3  
Scenario 3 is possible with S12SDBGV1 SCR encoding.  
4.20.5.5 Scenario 4  
Trigger if a sequence of 2 events is carried out in an incorrect order. Event A must be followed by event B, and event B must be followed  
by event A. 2 consecutive occurrences of event A without an intermediate event B causes a trigger. Similarly 2 consecutive occurrences  
of event B without an intermediate event A causes a trigger. This is possible by using CompA and CompC to match on the same address  
as shown.  
M0  
SCR2=0011  
SCR1=0100  
State2  
M0  
State1  
M2  
M1  
M1  
Final State  
State 3  
SCR3=0001  
M1  
Figure 71. Scenario 4a  
This scenario is currently not possible using 2 comparators only. S12SDBGV2 makes it possible with 2 comparators, State 3 allows a M0  
to return to state 2, while a M2 leads to Final state, as shown in Figure 72.  
M0  
SCR2=1100  
SCR1=0110  
State2  
M01  
State1  
M0  
M2  
M2  
M1 disabled in  
range mode  
Final State  
State 3  
SCR3=1110  
M2  
Figure 72. Scenario 4b (with 2 comparators)  
The advantage of using only 2 channels is that range comparisons can now be included (channel0).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
251/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
This however violates the S12SDBGV1 specification, which states that a match leading to final state always has priority, in case of a  
simultaneous match, while priority is also given to the lowest channel number. For the S12SDBG, the corresponding CPU priority decoder  
is removed to support this, such that on simultaneous taghits, taghits pointing to Final state have highest priority. If no taghit points to Final  
state, then the lowest channel number has priority. With the above encoding from State3, the CPU and DBG would break on a  
simultaneous M0/M2.  
4.20.5.6 Scenario 5  
Trigger if following event A, event C precedes event B. i.e... the expected execution flow is A->B->C.  
SCR2=0110  
SCR1=0011  
M0  
M1  
M2  
Final State  
State2  
State1  
Figure 73. Scenario 5  
Scenario 5 is possible with the S12SDBGV1 SCR encoding.  
4.20.5.7 Scenario 6  
Trigger if event A occurs twice in succession before any of 2 other events (BC) occur. This scenario is not possible using the S12SDBGV1  
SCR encoding. S12SDBGV2 includes additions shown in red. The change in SCR1 encoding also has the advantage that a  
State1->State3 transition using M0 is now possible. This is advantageous because range and data bus comparisons use channel 0 only.  
SCR3=1010  
SCR1=1001  
M0  
M0  
M12  
Final State  
State3  
State1  
Figure 74. Scenario 6  
4.20.5.8 Scenario 7  
Trigger when a series of 3 events are executed out of order. Specifying the event order as M1, M2, M0 to run in loops (120120120). Any  
deviation from that order should trigger. This scenario is not possible using the S12SDBGV1 SCR encoding, because OR possibilities are  
very limited in the channel encoding. By adding OR forks as shown in red, this scenario is possible.  
M01  
SCR2=1100  
SCR3=1101  
SCR1=1101  
M12  
M2  
M1  
Final State  
State3  
State2  
State1  
M0  
M02  
Figure 75. Scenario 7  
On simultaneous matches the lowest channel number has priority, so with this configuration the forking from State1 has the peculiar effect  
that a simultaneous match0/match1 transitions to Final state, but a simultaneous match2/match1transitions to state2.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
252/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.20.5.9 Scenario 8  
Trigger when a routine/event at M2 follows either M1 or M0.  
SCR2=0101  
SCR1=0111  
M2  
M01  
Final State  
State2  
State1  
Figure 76. Scenario 8a  
Trigger when an event M2 is followed by either an event M0 or event M1  
SCR2=0111  
SCR1=0010  
M01  
M2  
Final State  
State2  
State1  
Figure 77. Scenario 8b  
Scenario 8a and 8b are possible with the S12SDBGV1 and S12SDBGV2 SCR encoding.  
4.20.5.10 Scenario 9  
Trigger when a routine/event at A (M2) does not follow either B or C (M1 or M0) before they are executed again. This cannot be realized  
with the S12SDBGV1 SCR encoding, due to OR limitations. By changing the SCR2 encoding as shown in red this scenario becomes  
possible.  
SCR2=1111  
SCR1=0111  
M01  
M01  
M2  
Final State  
State2  
State1  
Figure 78. Scenario 9  
4.20.5.11 Scenario 10  
Trigger if an event M0 occurs following up to two successive M2 events, without the resetting event M1. As shown, up to 2 consecutive  
M2 events are allowed, whereby a reset to State1 is possible, after either one or two M2 events. If an event M0 occurs following the second  
M2, before M1 resets to State1, a trigger is generated. Configuring CompA and CompC the same, it is possible to generate a breakpoint  
on the third consecutive occurrence of event M0 without a reset on M1.  
M1  
SCR2=0100  
SCR3=0010  
SCR1=0010  
M0  
M2  
M2  
Final State  
State3  
State2  
State1  
M1  
Figure 79. Scenario 10a  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
253/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
M0  
SCR2=0011  
SCR3=0000  
State3  
SCR1=0010  
M1  
M2  
Final State  
State2  
State1  
M0  
Figure 80. Scenario 10b  
Scenario 10b shows the case that after M2, an M1 must occur before M0. Starting from a particular point in code, event M2 must always  
be followed by M1 before M0. If after any M2 event, M0 occurs before M1, then a trigger is generated.  
4.21 MCU - security (S12XS9S12I128PIMV1V2)  
4.21.1 Introduction  
This specification describes the function of the security mechanism in the S12I chip family (9S12I128PIMV1).  
NOTE  
No security feature is absolutely secure. However, NXP’s strategy is to make reading or copying the  
FLASH and/or EEPROM difficult for unauthorized users.  
4.21.1.1 Features  
The user must be reminded that part of the security must lie with the application code. An extreme example would be application code  
that dumps the contents of the internal memory. This would defeat the purpose of security. At the same time, the user may also wish to  
put a backdoor in the application program. An example of this is the user downloads a security key through the SCI, which allows access  
to a programming routine that updates parameters stored in another section of the Flash memory.  
The security features of the S12I chip family (in secure mode) are:  
Protect the content of non-volatile memories (Flash, EEPROM)  
Execution of NVM commands is restricted  
Disable access to internal memory via background debug module (BDM)  
4.21.1.2 Modes of operation  
Table 388 gives an overview over availability of security relevant features in unsecure and secure modes.  
Table 388. Feature availability in unsecure and secure modes on S12XS  
Unsecure mode  
NX ES  
Secure mode  
NX ES  
NS  
SS  
EX  
ST  
NS  
SS  
EX  
ST  
Flash Array Access  
EEPROM Array Access  
NVM Commands  
BDM  
4
4
4
4
4
4
(259)  
(259)  
(259)  
4
4
4
4
4
(260)  
4
4
4
DBG Module Trace  
4
Notes  
259. Restricted NVM command set only. Refer to the NVM wrapper block guides for detailed information.  
260. BDM hardware commands restricted to peripheral registers only.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
254/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.21.1.3 Securing the microcontroller  
Once the user has programmed the Flash and EEPROM, the chip can be secured by programming the security bits located in the  
options/security byte in the Flash memory array. These non-volatile bits will keep the device secured through reset and power-down.  
The options/security byte is located at address 0xFF0F (= global address 0x7F_FF0F) in the Flash memory array. This byte can be erased  
and programmed like any other Flash location. Two bits of this byte are used for security (SEC[1:0]). On devices which have a memory  
page window, the Flash options/security byte is also available at address 0xBF0F by selecting page 0x3F with the PPAGE register. The  
contents of this byte are copied into the Flash security register (FSEC) during a reset sequence.  
Table 389. Flash options/security byte  
7
6
5
4
3
2
1
0
0xFF0F  
KEYEN1  
KEYEN0  
NV5  
NV4  
NV3  
NV2  
SEC1  
SEC0  
The meaning of the bits KEYEN[1:0] is shown in Table 390. Refer to Section 4.21.1.5.1, “Unsecuring the MCU using the backdoor key  
access" for more information.  
Table 390. Backdoor key access enable bits  
KEYEN[1:0]  
Backdoor key access enabled  
0 (disabled)  
00  
01  
10  
11  
0 (disabled)  
1 (enabled)  
0 (disabled)  
The meaning of the security bits SEC[1:0] is shown in Table 391. For security reasons, the state of device security is controlled by two  
bits. To put the device in unsecured mode, these bits must be programmed to SEC[1:0] = ‘10’. All other combinations put the device in a  
secured mode. The recommended value to put the device in secured state is the inverse of the unsecured state, i.e. SEC[1:0] = ‘01’.  
Table 391. Security bits  
SEC[1:0]  
Security state  
1 (secured)  
00  
01  
10  
11  
1 (secured)  
0 (unsecured)  
1 (secured)  
NOTE  
Refer to the Flash block guide for actual security configuration (in section “Flash Module Security”).  
4.21.1.4 Operation of the secured microcontroller  
By securing the device, unauthorized access to the EEPROM and Flash memory contents can be prevented. However, it must be  
understood that the security of the EEPROM and Flash memory contents also depends on the design of the application program. For  
example, if the application has the capability of downloading code through a serial port and then executing that code (e.g. an application  
containing bootloader code), then this capability could potentially be used to read the EEPROM and Flash memory contents, even when  
the microcontroller is in the secure state. In this example, the security of the application could be enhanced by requiring a  
challenge/response authentication before any code can be downloaded.  
Secured operation has the following effects on the microcontroller:  
4.21.1.4.1  
Normal single chip mode (NS)  
Background debug module (BDM) operation is completely disabled.  
Execution of Flash and EEPROM commands is restricted. Refer to the NVM block guide for details.  
Tracing code execution using the DBG module is disabled.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
255/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.21.1.4.2  
Special single chip mode (SS)  
BDM firmware commands are disabled.  
BDM hardware commands are restricted to the register space.  
Execution of Flash and EEPROM commands is restricted. Refer to the NVM block guide for details.  
Tracing code execution using the DBG module is disabled.  
Special single chip mode means BDM is active after reset. The availability of BDM firmware commands depends on the security state of  
the device. The BDM secure firmware first performs a blank check of both the Flash memory and the EEPROM. If the blank check  
succeeds, security will be temporarily turned off and the state of the security bits in the appropriate Flash memory location can be changed.  
If the blank check fails, security will remain active, only the BDM hardware commands will be enabled, and the accessible memory space  
is restricted to the peripheral register area. This will allow the BDM to be used to erase the EEPROM and Flash memory without giving  
access to their contents. After erasing both Flash memory and EEPROM, another reset into special single chip mode will cause the blank  
check to succeed and the options/security byte can be programmed to “unsecured” state via BDM.  
While the BDM is executing the blank check, the BDM interface is completely blocked, which means that all BDM commands are  
temporarily blocked.  
4.21.1.5 Unsecuring the microcontroller  
Unsecuring the microcontroller can be done by three different methods:  
1. Backdoor key access  
2. Reprogramming the security bits  
3. Complete memory erase (special modes)  
4.21.1.5.1  
Unsecuring the MCU using the backdoor key access  
In Normal modes (single chip and expanded), security can be temporarily disabled using the backdoor key access method. This method  
requires that:  
The backdoor key at 0xFF00–0xFF07 (= global addresses 0x7F_FF00–0x7F_FF07) has been programmed to a valid value.  
The KEYEN[1:0] bits within the Flash options/security byte select ‘enabled’.  
In single chip mode, the application program programmed into the microcontroller must be designed to have the capability to  
write to the backdoor key locations.  
The backdoor key values themselves would not normally be stored within the application data, which means the application program would  
have to be designed to receive the backdoor key values from an external source (e.g. through a serial port).  
The backdoor key access method allows debugging of a secured microcontroller without having to erase the Flash. This is particularly  
useful for failure analysis.  
NOTE  
No word of the backdoor key is allowed to have the value 0x0000 or 0xFFFF.  
4.21.1.6 Reprogramming the security bits  
In normal single chip mode (NS), security can also be disabled by erasing and reprogramming the security bits within Flash  
options/security byte to the unsecured value. Because the erase operation will erase the entire sector from 0xFE00–0xFFFF (0x7F_FE00–  
0x7F_FFFF), the backdoor key and the interrupt vectors will also be erased; this method is not recommended for normal single chip mode.  
The application software can only erase and program the Flash options/security byte if the Flash sector containing the Flash  
options/security byte is not protected (see Flash protection). Flash protection is a useful means of preventing this method. The  
microcontroller will enter the unsecured state after the next reset following the programming of the security bits to the unsecured value.  
This method requires that:  
The application software previously programmed into the microcontroller has been designed to have the capability to erase and  
program the Flash options/security byte, or security is first disabled using the backdoor key method, allowing BDM to be used to  
issue commands to erase and program the Flash options/security byte.  
The Flash sector containing the Flash options/security byte is not protected.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
256/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.21.1.7 Complete memory erase (special modes)  
The microcontroller can be unsecured in special modes by erasing the entire EEPROM and Flash memory contents.  
When a secure microcontroller is reset into special single chip mode (SS), the BDM firmware verifies whether the EEPROM and Flash  
memory are erased. If any EEPROM or Flash memory address is not erased, only BDM hardware commands are enabled. BDM hardware  
commands can then be used to write to the EEPROM and Flash registers to mass erase the EEPROM and all Flash memory blocks.  
When next resetting into special single chip mode, the BDM firmware will again verify whether all EEPROM and Flash memory are erased.  
This being the case, it will enable all BDM commands, allowing the Flash options/security byte to be programmed to the unsecured value.  
The security bits SEC[1:0] in the Flash security register will indicate the unsecure state following the next reset.  
4.22 Background debug module (9S12I128PIMV1)  
4.22.1 Introduction  
This section describes the functionality of the background debug module (BDM) sub-block of the HCS12S core platform.  
The background debug module (BDM) sub-block is a single-wire, background debug system, implemented in on-chip hardware for  
minimal CPU intervention. All interfacing with the BDM is done via the BKGD pin.  
The BDM has enhanced capability for maintaining synchronization between the target and host while allowing more flexibility in clock  
rates. This includes a sync signal to determine the communication rate and a handshake signal to indicate when an operation is complete.  
The system is backwards compatible to the BDM of the S12 family with the following exceptions:  
TAGGO command not supported by S12SBDM  
External instruction tagging feature is part of the DBG module  
S12SBDM register map and register content modified  
Family ID readable from BDM ROM at global address 0x3_FF0F in active BDM  
(value for devices with HCS12S core is 0xC2)  
Clock switch removed from BDM (CLKSW bit removed from BDMSTS register)  
4.22.1.1 Features  
The BDM includes these distinctive features:  
Single-wire communication with host development system  
Enhanced capability for allowing more flexibility in clock rates  
SYNC command to determine communication rate  
(267)  
GO_UNTIL  
command  
Hardware handshake protocol to increase the performance of the serial communication  
Active out of reset in special single chip mode  
Nine hardware commands using free cycles, if available, for minimal CPU intervention  
Hardware commands not requiring active BDM  
14 firmware commands execute from the standard BDM firmware lookup table  
Software control of BDM operation during Wait mode  
When secured, hardware commands are allowed to access the register space in special single chip mode, if the Flash erase  
tests fail  
Family ID readable from BDM ROM at global address 0x3_FF0F in active BDM  
(value for devices with HCS12S core is 0xC2)  
BDM hardware commands are operational until system Stop mode is entered  
4.22.1.2 Modes of operation  
BDM is available in all operating modes, but must be enabled before firmware commands are executed. Some systems may have a control  
bit that allows suspending the function during background debug mode.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
257/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.1.2.1  
Regular run modes  
All of these operations refer to the part in run mode and not being secured. The BDM does not provide controls to conserve power during  
run mode.  
Normal modes - General operation of the BDM is available and operates the same in all normal modes  
Special single chip mode - In special single chip mode, background operation is enabled and active out of reset. This allows  
programming a system with blank memory  
4.22.1.2.2  
Secure mode operation  
If the device is in secure mode, the operation of the BDM is reduced to a small subset of its regular run mode operation. Secure operation  
prevents access to Flash other than allowing erasure. For more information, see Section 4.22.4.1, “Security".  
4.22.1.2.3  
Low-power modes  
The BDM can be used until Stop mode is entered. When CPU is in Wait mode, all BDM firmware commands as well as the hardware  
BACKGROUND command cannot be used and are ignored. In this case, the CPU can not enter BDM active mode, and only hardware  
read and write commands are available. Also, the CPU can not enter a Low Power mode (stop or wait) during BDM active mode.  
In Stop mode, the BDM clocks are stopped. When BDM clocks are disabled and Stop mode is exited, the BDM clocks will restart and BDM  
will have a soft reset (clearing the instruction register, any command in progress and disable the ACK function). The BDM is now ready  
to receive a new command.  
4.22.1.3 Block diagram  
A block diagram of the BDM is shown in Figure 81.  
Host  
System  
Serial  
Interface  
Data  
16-Bit Shift Register  
BKGD  
Control  
Register Block  
Address  
Data  
Bus Interface  
and  
Control Logic  
TRACE  
Instruction Code  
and  
Control  
Clocks  
BDMACT  
Execution  
ENBDM  
SDV  
Standard BDM Firmware  
LOOKUP TABLE  
Secured BDM Firmware  
LOOKUP TABLE  
UNSEC  
BDMSTS  
Register  
Figure 81. BDM block diagram  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
258/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.2 External signal description  
A single-wire interface pin called the background debug interface (BKGD) pin is used to communicate with the BDM system. During reset,  
this pin is a mode select input which selects between normal and special modes of operation. After reset, this pin becomes the dedicated  
serial interface pin for the background debug mode. The communication rate of this pin is based on the settings for the VCO clock  
(CPMUSYNR). The BDM clock frequency is always VCO clock frequency divided by 8. After reset, the BDM clock is based on the reset  
values of the CPMUSYNR register (4.0 MHz). When modifying the VCO clock, make sure that the communication rate is adapted  
accordingly, and a communication timeout (BDM soft reset) has occurred.  
4.22.3 Memory map and register definition  
4.22.3.1 Module memory map  
Table 49 shows the BDM memory map when BDM is active.  
Table 392. BDM memory map  
Global Address  
0x3_FF00–0x3_FF0B  
0x3_FF0C–0x3_FF0E  
0x3_FF0F  
Module  
BDM registers  
Size (bytes)  
12  
3
BDM firmware ROM  
Family ID (part of BDM firmware ROM)  
BDM firmware ROM  
1
0x3_FF10–0x3_FFFF  
240  
4.22.3.2 Register descriptions  
A summary of the registers associated with the BDM is shown in Table 393. Registers are accessed by host-driven communications to  
the BDM hardware using READ_BD and WRITE_BD commands.  
Table 393. BDM register summary  
Register  
name  
Global  
address  
Bit 7  
6
5
4
3
2
1
Bit 0  
R
W
R
X
X
X
X
X
X
0
0
0x3_FF00  
0x3_FF01  
0x3_FF02  
0x3_FF03  
0x3_FF04  
0x3_FF05  
0x3_FF06  
Reserved  
BDMSTS  
Reserved  
Reserved  
Reserved  
Reserved  
BDMCCR  
BDMACT  
0
X
X
X
X
SDV  
Z
TRACE  
0
X
X
X
X
UNSEC  
0
X
X
X
X
ENBDM  
X
W
R
Z
X
X
X
X
X
X
X
X
X
X
W
R
X
X
X
X
X
X
X
X
X
W
R
W
R
W
R
CCR7  
X
CCR6  
CCR5  
CCR4  
CCR3  
CCR2  
CCR1  
CCR0  
W
= Unimplemented, Reserved  
= Indeterminate  
Z
0
= Implemented (do not alter)  
= Always read zero  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
259/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 393. BDM register summary (continued)  
Register  
name  
Global  
address  
Bit 7  
6
5
4
3
2
1
Bit 0  
R
W
R
0
0
0
0
0
0
0
0
0x3_FF07  
0x3_FF08  
0x3_FF09  
0x3_FF0A  
0x3_FF0B  
Reserved  
BDMPPR  
0
0
0
0
0
0
0
0
0
0
0
0
BPAE  
0
BPP3  
0
BPP2  
0
BPP1  
0
BPP0  
0
W
R
Reserved  
Reserved  
Reserved  
W
R
0
0
0
0
0
0
0
0
0
0
W
R
W
= Unimplemented, Reserved  
= Indeterminate  
Z
0
= Implemented (do not alter)  
= Always read zero  
X
4.22.3.2.1  
BDM status register (BDMSTS)  
Table 394. BDM status register (BDMSTS)  
Register Global Address  
7
6
5
0
4
3
2
0
1
0
0
0x3_FF01  
R
BDMACT  
SDV  
TRACE  
UNSEC  
ENBDM  
W
Reset  
(261)  
(262)  
Special Single-Chip Mode  
All Other Modes  
0
1
0
0
0
0
0
0
0
Z
0
0
0
0
0
0
0
0
= Unimplemented, Reserved  
= Always read zero  
= Implemented (do not alter)  
Notes  
261. ENBDM is read as a 1 by a debugging environment in special single chip mode, when the device is either secured or not secured, but fully erased  
(Flash). This is because the ENBDM bit is set by the standard BDM firmware before a BDM command can be fully transmitted and executed.  
262. UNSEC is read as a 1 by a debugging environment in special single chip mode when the device is secured and fully erased, else it is 0 and can  
only be read if not secure (see also bit description).  
Read: All modes through BDM operation when not secured  
Write: All modes through BDM operation when not secured, but subject to the following:  
ENBDM should only be set via a BDM hardware command if the BDM firmware commands are needed. (This does not apply  
in special single chip mode)  
BDMACT can only be set by BDM hardware upon entry into BDM. It can only be cleared by the standard BDM firmware  
lookup table upon exit from BDM active mode  
All other bits, while writable via BDM hardware or standard BDM firmware write commands, should only be altered by the  
BDM hardware or the standard firmware lookup table, as part of BDM command execution  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
260/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 395. BDMSTS field descriptions  
Field  
Description  
Enable BDM — This bit controls whether the BDM is enabled or disabled. When enabled, BDM can be made active to allow firmware  
commands to be executed. When disabled, BDM cannot be made active but BDM hardware commands are still allowed.  
7
0
1
BDM disabled  
BDM enabled  
ENBDM  
Note: ENBDM is set out of reset in special single chip mode. In special single chip mode with the device secured, this bit will not be  
set until after the Flash erase verify tests are complete.  
BDM Active Status — This bit becomes set upon entering BDM. The standard BDM firmware lookup table is then enabled and put into  
the memory map. BDMACT is cleared by a carefully timed store instruction in the standard BDM firmware, as part of the exit sequence  
to return to user code and remove the BDM memory from the map.  
6
BDMACT  
0
1
BDM not active  
BDM active  
Shift Data Valid — This bit is set and cleared by the BDM hardware. It is set after data has been transmitted as part of a BDM firmware  
or hardware read command, or after data has been received as part of a BDM firmware or hardware write command. It is cleared when  
the next BDM command has been received or BDM is exited. SDV is used by the standard BDM firmware to control program flow  
execution.  
4
SDV  
0
1
Data phase of command not complete  
Data phase of command is complete  
TRACE1 BDM Firmware Command is Being Executed — This bit gets set when a BDM TRACE1 firmware command is first  
(267)  
3
recognized. It will stay set until BDM firmware is exited by one of the following BDM commands: GO or GO_UNTIL  
.
0
1
TRACE1 command is not being executed  
TRACE1 command is being executed  
TRACE  
Unsecure — If the device is secured this bit is only writable in special single chip mode from the BDM secure firmware. It is in a zero  
state as secure mode is entered so that the secure BDM firmware lookup table is enabled and put into the memory map, overlapping  
the standard BDM firmware lookup table.  
The secure BDM firmware lookup table verifies that the on-chip Flash is erased. This being the case, the UNSEC bit is set and the BDM  
program jumps to the start of the standard BDM firmware lookup table, and the secure BDM firmware lookup table is turned off. If the  
erase test fails, the UNSEC bit will not be asserted.  
1
0
1
System is in a secured mode.  
System is in a unsecured mode.  
UNSEC  
Note: When UNSEC is set, security is off and the user can change the state of the secure bits in the on-chip Flash EEPROM. Note that  
if the user does not change the state of the bits to “unsecured” mode, the system will be secured again when it is next taken out  
of reset. After reset, this bit has no meaning or effect when the security byte in the Flash EEPROM is configured for unsecure  
mode.  
Table 396. BDM CCR holding register (BDMCCR)  
Register Global Address  
7
6
5
4
3
2
1
0
0x3_FF06  
R
W
CCR7  
CCR6  
CCR5  
CCR4  
CCR3  
CCR2  
CCR1  
CCR0  
Reset  
Special Single-Chip Mode  
All Other Modes  
1
0
1
0
0
0
1
0
1
0
0
0
0
0
0
0
Read: All modes through BDM operation when not secured  
Write: All modes through BDM operation when not secured  
NOTE  
When BDM is made active, the CPU stores the content of its CCR register in the BDMCCR register.  
However, out of special single-chip reset, the BDMCCR is set to 0xD8 and not 0xD0 which is the reset  
value of the CCR register in this CPU mode. Out of reset in all other modes the BDMCCR register is  
read zero.  
When entering background debug mode, the BDM CCR holding register is used to save the condition code register of the user’s program.  
It is also used for temporary storage in the standard BDM firmware mode. The BDM CCR holding register can be written to modify the  
CCR value.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
261/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.3.2.2  
BDM program page index register (BDMPPR)  
Table 397. BDM program page register (BDMPPR)  
Register Global  
Address 0x3_FF08  
7
6
0
5
0
4
0
3
2
1
0
R
BPAE  
0
BPP3  
0
BPP2  
0
BPP1  
0
BPP0  
0
W
Reset  
0
0
0
= Unimplemented, Reserved  
Read: All modes through BDM operation when not secured  
Write: All modes through BDM operation when not secured  
Table 398. BDMPPR field descriptions  
Field  
Description  
BDM Program Page Access Enable Bit — BPAE enables program page access for BDM hardware and firmware read/write  
instructions The BDM hardware commands used to access the BDM registers (READ_BD and WRITE_BD) can not be used for global  
accesses even if the BGAE bit is set.  
7
BPAE  
0
1
BDM Program Paging disabled  
BDM Program Paging enabled  
3–0  
BDM Program Page Index Bits 3–0 — These bits define the selected program page. For more detailed information regarding the  
program page window scheme, refer to the S12S_MMC Block Guide.  
BPP[3:0]  
4.22.3.3 Family ID assignment  
The family ID is an 8-bit value located in the BDM ROM in active BDM (at global address: 0x3_FF0F). The read-only value is a unique  
family ID which is 0xC2 for devices with an HCS12S core.  
4.22.4 Functional description  
The BDM receives and executes commands from a host via a single wire serial interface. There are two types of BDM commands:  
hardware and firmware commands.  
Hardware commands are used to read and write target system memory locations and to enter active background debug mode. See  
Section 4.22.4.3, “BDM hardware commands". Target system memory includes all memory that is accessible by the CPU.  
Firmware commands are used to read and write CPU resources and to exit from active background debug mode. See Section 4.22.4.4,  
“Standard BDM firmware commands". The CPU resources referred to are the accumulator (D), X index register (X), Y index register (Y),  
stack pointer (SP), and program counter (PC).  
Hardware commands can be executed at any time and in any mode, excluding a few exceptions as highlighted (see Section 4.22.4.3,  
“BDM hardware commands") and in secure mode (see Section 4.22.4.1, “Security"). BDM firmware commands can only be executed  
when the system is not secure and is in active background debug mode (BDM).  
4.22.4.1 Security  
If the user resets into special single chip mode with the system secured, a secured mode BDM firmware lookup table is brought into the  
map overlapping a portion of the standard BDM firmware lookup table. The secure BDM firmware verifies that the on-chip Flash EEPROM  
is erased. This being the case, the UNSEC and ENBDM bits will get set. The BDM program jumps to the start of the standard BDM  
firmware, the secured mode BDM firmware is turned off, and all BDM commands are allowed. If the Flash does not verify as erased, the  
BDM firmware sets the ENBDM bit, without asserting UNSEC, and the firmware enters a loop. This causes the BDM hardware commands  
to become enabled, but does not enable the firmware commands. This allows the BDM hardware to be used to erase the Flash.  
BDM operation is not possible in any other mode than special single chip mode when the device is secured. The device can only be  
unsecured via the BDM serial interface in special single chip mode. For more information regarding security, see the S12S_9SEC Block  
Guide.  
4.22.4.2 Enabling and activating BDM  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
262/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The system must be in active BDM to execute standard BDM firmware commands. BDM can be activated only after being enabled. BDM  
is enabled by setting the ENBDM bit in the BDM status (BDMSTS) register. The ENBDM bit is set by writing to the BDM status (BDMSTS)  
register, via the single-wire interface, using a hardware command such as WRITE_BD_BYTE.  
After being enabled, BDM is activated by one of the following (263)  
:
Hardware BACKGROUND command  
CPU BGND instruction  
Breakpoint force or tag mechanism(264)  
Notes  
263. BDM is enabled and active immediately out of special single-chip reset.  
264. This method is provided by the S12S_DBG module.  
When BDM is activated, the CPU finishes executing the current instruction and then begins executing the firmware in the standard BDM  
firmware lookup table. When BDM is activated by a breakpoint, the type of breakpoint used determines if BDM becomes active before or  
after execution of the next instruction.  
NOTE  
If an attempt is made to activate BDM before being enabled, the CPU resumes normal instruction  
execution after a brief delay. If BDM is not enabled, any hardware BACKGROUND commands issued  
are ignored by the BDM and the CPU is not delayed.  
In active BDM, the BDM registers and standard BDM firmware lookup table are mapped to addresses 0x3_FF00 to 0x3_FFFF. BDM  
registers are mapped to addresses 0x3_FF00 to 0x3_FF0B. The BDM uses these registers which are readable anytime by the BDM.  
However, these registers are not readable by user programs.  
When BDM is activated, while CPU executes code overlapping with the BDM firmware space, the saved program counter (PC) will be  
auto incremented by one from the BDM firmware, regardless of what caused the entry into BDM active mode (BGND instruction,  
BACKGROUND command or breakpoints). In such cases, the PC must be set to the next valid address via a WRITE_PC command,  
before executing the GO command.  
4.22.4.3 BDM hardware commands  
Hardware commands are used to read and write target system memory locations and to enter active background debug mode. Target  
system memory includes all memory that is accessible by the CPU such as on-chip RAM, Flash, I/O and control registers.  
Hardware commands are executed with minimal or no CPU intervention, and do not require the system to be in active BDM for execution,  
although, they can still be executed in this mode. When executing a hardware command, the BDM sub-block waits for a free bus cycle,  
so the background access does not disturb the running application program. If a free cycle is not found within 128 clock cycles, the CPU  
is momentarily frozen so the BDM can steal a cycle. When the BDM finds a free cycle, the operation does not intrude on normal CPU  
operation, provided it can be completed in a single cycle. However, if an operation requires multiple cycles, the CPU is frozen until the  
operation is complete, even though the BDM found a free cycle.  
The BDM hardware commands are listed in Table 399. The READ_BD and WRITE_BD commands allow access to the BDM register  
locations. These locations are not normally in the system memory map, but share addresses with the application in memory. To distinguish  
between physical memory locations that share the same address, BDM memory resources are enabled just for the READ_BD and  
WRITE_BD access cycle. This allows the BDM to access BDM locations unobtrusively, even if the addresses conflict with the application  
memory map.  
Table 399. Hardware commands  
Command  
Opcode (hex)  
Data  
Description  
Enter background mode if BDM is enabled. If enabled, an ACK will be issued when the part  
enters active background mode.  
BACKGROUND  
90  
None  
ACK_ENABLE  
D5  
D6  
None  
None  
Enable Handshake. Issues an ACK pulse after the command is executed.  
Disable Handshake. This command does not issue an ACK pulse.  
ACK_DISABLE  
READ_BD_BYTE  
16-bit address  
16-bit data out  
Read from memory with standard BDM firmware lookup table in map.   
Odd address data on low byte; even address data on high byte.  
E4  
EC  
E0  
16-bit address  
16-bit data out  
Read from memory with standard BDM firmware lookup table in map.   
READ_BD_WORD  
READ_BYTE  
Must be aligned access.  
16-bit address  
16-bit data out  
Read from memory with standard BDM firmware lookup table out of map.   
Odd address data on low byte; even address data on high byte.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
263/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 399. Hardware commands (continued)  
Command  
Opcode (hex)  
Data  
Description  
16-bit address  
16-bit data out  
Read from memory with standard BDM firmware lookup table out of map. Must be aligned  
access.  
READ_WORD  
E8  
WRITE_BD_BYTE  
16-bit address  
16-bit data in  
Write to memory with standard BDM firmware lookup table in map.   
C4  
CC  
C0  
C8  
Odd address data on low byte; even address data on high byte.  
16-bit address  
16-bit data in  
Write to memory with standard BDM firmware lookup table in map.   
WRITE_BD_WORD  
WRITE_BYTE  
Must be aligned access.  
16-bit address  
16-bit data in  
Write to memory with standard BDM firmware lookup table out of map.   
Odd address data on low byte; even address data on high byte.  
16-bit address  
16-bit data in  
Write to memory with standard BDM firmware lookup table out of map.   
Must be aligned access.  
WRITE_WORD  
If enabled, ACK will occur when data is ready for transmission for all BDM READ commands, and will occur after the write is complete for  
all BDM WRITE commands.  
4.22.4.4 Standard BDM firmware commands  
BDM firmware commands are used to access and manipulate CPU resources. The system must be in active BDM to execute standard  
BDM firmware commands. See Section 4.22.4.2, “Enabling and activating BDM". Normal instruction execution is suspended while the  
CPU executes the firmware located in the standard BDM firmware lookup table. The hardware command BACKGROUND is the usual  
way to activate BDM.  
As the system enters active BDM, the standard BDM firmware lookup table, BDM registers become visible in the on-chip memory map at  
0x3_FF00–0x3_FFFF, and the CPU begins executing the standard BDM firmware. The standard BDM firmware watches for serial  
commands and executes them as they are received.  
The firmware commands are shown in Table 400.  
Table 400. Firmware commands  
(265)  
Command  
Opcode (hex)  
Data  
Description  
(266)  
READ_NEXT  
62  
63  
64  
65  
66  
67  
42  
43  
44  
45  
46  
47  
08  
0C  
16-bit data out Increment X index register by 2 (X = X + 2), then read word X points to.  
16-bit data out Read program counter.  
READ_PC  
READ_D  
16-bit data out Read D accumulator.  
READ_X  
16-bit data out Read X index register.  
READ_Y  
16-bit data out Read Y index register.  
READ_SP  
WRITE_NEXT  
WRITE_PC  
WRITE_D  
WRITE_X  
WRITE_Y  
WRITE_SP  
GO  
16-bit data out Read stack pointer.  
16-bit data in  
16-bit data in  
16-bit data in  
16-bit data in  
16-bit data in  
16-bit data in  
none  
Increment X index register by 2 (X = X + 2), then write word to location pointed to by X.  
Write program counter.  
Write D accumulator.  
Write X index register.  
Write Y index register.  
Write stack pointer.  
Go to user program. If enabled, ACK will occur when leaving active background mode.  
Go to user program. If enabled, ACK will occur upon returning to active background mode.  
(267)  
GO_UNTIL  
none  
Execute one user instruction then return to active BDM. If enabled, ACK will occur upon  
returning to active background mode.  
TRACE1  
10  
none  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
264/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 400. Firmware commands (continued)  
(265)  
Command  
Opcode (hex)  
Data  
Description  
(Previous enable tagging and go to user program.) This command will be deprecated and  
should not be used anymore. Opcode will be executed as a GO command.  
TAGGO -> GO  
18  
none  
Notes  
265. If enabled, ACK will occur when data is ready for transmission for all BDM READ commands, and will occur after the write is complete for all BDM  
WRITE commands.  
266. When the firmware command READ_NEXT or WRITE_NEXT is used to access the BDM address space, the BDM resources are accessed, rather  
than user code. Writing BDM firmware is not possible.  
267. System stop disables the ACK function and ignored commands will have no ACK-pulse (e.g., CPU in stop or wait mode). The GO_UNTIL command  
will not get an Acknowledge, if the CPU executes the wait or stop instruction before the “UNTIL” condition (BDM active again) is reached (see  
Section 4.22.4.7, “Serial interface hardware handshake protocol" last note).  
4.22.4.5 BDM command structure  
Hardware and firmware BDM commands start with an 8-bit opcode followed by a 16-bit address and/or a 16-bit data word, depending on  
the command. All the read commands return 16 bits of data despite the byte or word implication in the command name.  
8-bit reads return 16-bits of data, only one byte of which contains valid data. If reading an even  
address, the valid data will appear in the MSB. If reading an odd address, the valid data will appear  
in the LSB.  
16-bit misaligned reads and writes are generally not allowed. If attempted by BDM hardware  
command, the BDM ignores the least significant bit of the address and assumes an even address  
from the remaining bits.  
For hardware data read commands, the external host must wait at least 150 bus clock cycles after sending the address before attempting  
to obtain the read data. This is to be certain that valid data is available in the BDM shift register, ready to be shifted out. For hardware write  
commands, the external host must wait 150 bus clock cycles after sending the data to be written, before attempting to send a new  
command. This is to avoid disturbing the BDM shift register before the write has been completed. The 150 bus clock cycle delay, in both  
cases, includes the maximum 128 cycle delay that can be incurred, as the BDM waits for a free cycle before stealing a cycle.  
The external host should wait at least 48 bus clock cycles after sending the command opcode and before attempting to obtain the read  
data for BDM firmware read commands. The 48 cycle wait allows enough time for the requested data to be made available in the BDM  
shift register, ready to be shifted out.  
The external host must wait 36 bus clock cycles after sending the data to be written, before attempting to send a new command for BDM  
firmware write commands. This is to avoid disturbing the BDM shift register before the write has been completed.  
The external host should wait for at least for 76 bus clock cycles, after a TRACE1 or GO command and before starting any new serial  
command. This is to allow the CPU to exit gracefully from the standard BDM firmware lookup table and resume execution of the user code.  
Disturbing the BDM shift register prematurely may adversely affect the exit from the standard BDM firmware lookup table.  
NOTE  
If the bus rate of the target processor is unknown or could be changing, it is recommended that the  
ACK (acknowledge function) is used to indicate when an operation is complete. When using ACK,  
the delay times are automated.  
Figure 82 represents the BDM command structure. The command blocks illustrate a series of eight bit times, starting with a falling edge.  
The bar across the top of the blocks indicates that the BKGD line idles in the high state. The time for an 8-bit command is 8 16 target  
clock cycles.(268)  
Notes  
268. Target clock cycles are cycles measured using the target MCU’s serial clock rate. See Section 4.22.4.6, “BDM serial interface" and Section 4.22.3.2.1,  
“BDM status register (BDMSTS)" for information on how serial clock rate is selected.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
265/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
8-Bits  
AT ~16 TC/Bit  
16-Bits  
AT ~16 TC/Bit  
150-BC  
Delay  
16 Bits  
AT ~16 TC/Bit  
Hardware  
Read  
Next  
Command  
Command  
Address  
Data  
150-BC  
Delay  
Hardware  
Write  
Next  
Command  
Command  
Address  
Data  
48-BC  
DELAY  
Firmware  
Read  
Next  
Command  
Command  
Command  
Data  
Command  
36-BC  
DELAY  
Firmware  
Write  
Next  
Command  
Data  
76-BC  
Delay  
GO,  
TRACE  
Next  
Command  
BC = Bus Clock Cycles  
TC = Target Clock Cycles  
Figure 82. BDM command structure  
4.22.4.6 BDM serial interface  
The BDM communicates with external devices serially via the BKGD pin. During reset, this pin is a mode select input which selects  
between normal and special modes of operation. After reset, this pin becomes the dedicated serial interface pin for the BDM.  
The BDM serial interface is timed, based on the VCO clock (refer to the CPMU Block Guide for more details), which gets divided by 8.  
This clock will be referred to as the target clock in the following explanation.  
The BDM serial interface uses a clocking scheme in which the external host generates a falling edge on the BKGD pin to indicate the start  
of each bit time. This falling edge is sent for every bit whether data is transmitted or received. Data is transferred, most significant bit (MSB)  
first, at 16 target clock cycles per bit. The interface times out if 512 clock cycles occur between falling edges from the host.  
The BKGD pin is a pseudo open-drain pin and has an weak on-chip active pull-up that is enabled at all times. It is assumed that there is  
an external pull-up and drivers connected to BKGD do not typically drive the high level. Since R-C rise time could be unacceptably long,  
the target system and host provide brief driven-high (speedup) pulses to drive BKGD to a logic 1. The source of this speedup pulse is the  
host for transmit cases and the target for receive cases.  
The timing for host-to-target is shown in Figure 83, and that of target-to-host in Figure 84 and Figure 85. All four cases begin when the  
host drives the BKGD pin low to generate a falling edge. Since the host and target are operating from separate clocks, it can take the  
target system up to one full clock cycle to recognize this edge. The target measures delays from this perceived start of the bit time, while  
the host measures delays from the point it actually drove BKGD low to start the bit up to one target clock cycle earlier. Synchronization  
between the host and target is established in this manner at the start of every bit time.  
Figure 83 shows an external host transmitting a logic 1 and transmitting a logic 0 to the BKGD pin of a target system. The host is  
asynchronous to the target, so there is up to a one clock-cycle delay from the host-generated falling edge to where the target recognizes  
this edge as the beginning of the bit time. Ten target clock cycles later, the target senses the bit level on the BKGD pin. Internal glitch  
detect logic requires the pin be driven high no later that eight target clock cycles after the falling edge for a logic 1 transmission.  
Since the host drives the high speedup pulses in these two cases, the rising edges look like digitally driven signals.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
266/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
BDM Clock  
(Target MCU)  
Host  
Transmit 1  
Host  
Transmit 0  
Perceived  
Start of Bit Time  
Target Senses Bit  
Earliest  
Start of  
Next Bit  
10 Cycles  
Synchronization  
Uncertainty  
Figure 83. BDM host-to-target serial bit timing  
The receive cases are more complicated. Figure 84 shows the host receiving a logic 1 from the target system. Since the host is  
asynchronous to the target, there is up to one clock cycle delay from the host-generated falling edge on BKGD to the perceived start of  
the bit time in the target. The host holds the BKGD pin low long enough for the target to recognize it (at least two target clock cycles). The  
host must release the low drive before the target drives a brief high speedup pulse seven target clock cycles after the perceived start of  
the bit time. The host should sample the bit level about 10 target clock cycles after it started the bit time.  
BDM Clock  
(Target MCU)  
Host  
Drive to  
High-impedance  
BKGD Pin  
Target System  
Speedup  
Pulse  
High-impedance  
High-impedance  
Perceived  
Start of Bit Time  
R-C Rise  
BKGD Pin  
10 Cycles  
10 Cycles  
Earliest  
Start of  
Next Bit  
Host Samples  
BKGD Pin  
Figure 84. BDM target-to-host serial bit timing (logic 1)  
Figure 85 shows the host receiving a logic 0 from the target. Since the host is asynchronous to the target, there is up to a one clock cycle  
delay from the host-generated falling edge on BKGD to the start of the bit time as perceived by the target. The host initiates the bit time  
but the target finishes it. Since the target wants the host to receive a logic 0, it drives the BKGD pin low for 13 target clock cycles then  
briefly drives it high to speed up the rising edge. The host samples the bit level about 10 target clock cycles after starting the bit time.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
267/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
BDM Clock  
(Target MCU)  
Host  
Drive to  
BKGD Pin  
High-impedance  
Speedup Pulse  
Target System  
Drive and  
Speedup Pulse  
Perceived  
Start of Bit Time  
BKGD Pin  
10 Cycles  
10 Cycles  
Earliest  
Start of  
Next Bit  
Host Samples  
BKGD Pin  
Figure 85. BDM target-to-host serial bit timing (logic 0)  
4.22.4.7 Serial interface hardware handshake protocol  
BDM commands that require CPU execution are ultimately treated at the MCU bus rate. Since the BDM clock source can be modified  
when changing the settings for the VCO frequency (CPMUSYNR), it is very helpful to provide a handshake protocol in which the host  
could determine when an issued command is executed by the CPU. The BDM clock frequency is always VCO frequency divided by 8.  
The alternative is to always wait the amount of time equal to the appropriate number of cycles at the slowest possible rate the clock could  
be running. This sub-section will describe the hardware handshake protocol.  
The hardware handshake protocol signals to the host controller when an issued command was successfully executed by the target. This  
protocol is implemented by a 16 serial clock cycle low pulse followed by a brief speedup pulse in the BKGD pin. This pulse is generated  
by the target MCU when a command, issued by the host, has been successfully executed (see Figure 86). This pulse is referred to as the  
ACK pulse. After the ACK pulse has finished: the host can start the bit retrieval if the last issued command was a read command, or start  
(267)  
a new command if the last command was a write command or a control command (BACKGROUND, GO, GO_UNTIL  
or TRACE1).  
The ACK pulse is not issued earlier than 32 serial clock cycles after the BDM command was issued. The end of the BDM command is  
assumed to be the 16th tick of the last bit. This minimum delay assures enough time for the host to perceive the ACK pulse. Note also  
that, there is no upper limit for the delay between the command and the related ACK pulse, since the command execution depends upon  
the CPU bus, which in some cases could be very slow due to long accesses taking place.This protocol allows a great flexibility for the  
POD designers, since it does not rely on any accurate time measurement or short response time to any event in the serial communication.  
BDM Clock  
(Target MCU)  
16 Cycles  
Target  
Transmits  
ACK Pulse  
High-Impedance  
32 Cycles  
High-Impedance  
Speedup Pulse  
Minimum Delay  
From the BDM Command  
BKGD Pin  
Earliest  
Start of  
Next Bit  
16th Tick of the  
Last Command Bit  
Figure 86. Target acknowledge pulse (ACK)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
268/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
If the ACK pulse was issued by the target, the host assumes the previous command was executed.  
If the CPU enters wait or stop prior to executing a hardware command, the ACK pulse will not be  
issued meaning that the BDM command was not executed. After entering wait or stop mode, the BDM  
command is no longer pending.  
Figure 87 shows the ACK handshake protocol in a command level timing diagram. The READ_BYTE instruction is used as an example.  
First, the 8-bit instruction opcode is sent by the host, followed by the address of the memory location to be read. The target BDM decodes  
the instruction. A bus cycle is grabbed (free or stolen) by the BDM and it executes the READ_BYTE operation. Having retrieved the data,  
the BDM issues an ACK pulse to the host controller, indicating that the addressed byte is ready to be retrieved. After detecting the ACK  
pulse, the host initiates the byte retrieval process. Note that data is sent in the form of a word, and the host needs to determine which is  
the appropriate byte, based on whether the address was odd or even.  
Target  
Host  
(2) Bytes are  
Retrieved  
New BDM  
Command  
BKGD Pin  
READ_BYTE  
Host  
Byte Address  
Target  
Host  
Target  
BDM Issues the  
ACK Pulse (out of scale)  
BDM Executes the  
READ_BYTE Command  
BDM Decodes  
the Command  
Figure 87. Handshake protocol at command level  
Differently from the normal bit transfer (where the host initiates the transmission), the serial interface ACK handshake pulse is initiated by  
the target MCU by issuing a negative edge on the BKGD pin. The hardware handshake protocol in Figure 86 specifies the timing when  
the BKGD pin is being driven, so the host should follow this timing constraint to avoid the risk of an electrical conflict on the BKGD pin.  
NOTE  
The only place the BKGD pin can have an electrical conflict is when one side is driving low and the  
other side is issuing a speedup pulse (high). Other “highs” are pulled rather than driven. The time of  
the speedup pulse can become lengthy at low rates, and so the potential conflict time becomes longer  
as well.  
The ACK handshake protocol does not support nested ACK pulses. If a BDM command is not acknowledge by an ACK pulse, the host  
needs to abort the pending command first in order to be able to issue a new BDM command. When the CPU enters wait or stop while the  
host issues a hardware command (e.g., WRITE_BYTE), the target discards the incoming command due to the wait or stop being detected.  
Therefore, the command is not acknowledged by the target, which means that the ACK pulse will not be issued. After a certain time the  
host (not aware of stop or wait) should decide to abort any possible pending ACK pulse, to be sure a new command can be issued. The  
protocol provides a mechanism in which a command, and its corresponding ACK, can be aborted.  
NOTE  
(267)  
The ACK pulse does not provide a timeout. This means for the GO_UNTIL  
command, it cannot  
be distinguished if a stop or wait has been executed (command discarded and ACK not issued), or if  
the “UNTIL” condition (BDM active) is just not reached yet. Therefore, where the ACK pulse of a  
command is not issued, the possible pending command should be aborted before issuing a new  
command. See the handshake abort procedure described in Section 4.22.4.8, “Hardware handshake  
abort procedure".  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
269/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.4.8 Hardware handshake abort procedure  
The abort procedure is based on the SYNC command. To abort a command which had not issued the corresponding ACK pulse, the host  
controller should generate a low pulse on the BKGD pin by driving it low for at least 128 serial clock cycles, and then driving it high for one  
serial clock cycle, providing a speedup pulse. By detecting this long low pulse on the BKGD pin, the target executes the SYNC protocol,  
see Section 4.22.4.9, “SYNC — request timed reference pulse", and assumes that the pending command, and therefore the related ACK  
pulse, are being aborted. Therefore, after the SYNC protocol has been completed, the host is free to issue new BDM commands. For  
BDM firmware READ or WRITE commands, it can not be guaranteed that the pending command is aborted, when issuing a SYNC before  
the corresponding ACK pulse. There is a short latency time from the time the READ or WRITE access begins until it is finished and the  
corresponding ACK pulse is issued. The latency time depends on the firmware READ or WRITE command that is issued and on the  
selected bus clock rate. When the SYNC command starts during this latency time, the READ or WRITE command will not be aborted, but  
(267)  
the corresponding ACK pulse will be aborted. A pending GO, TRACE1 or GO_UNTIL  
corresponding ACK pulse can be aborted by the SYNC command.  
command can not be aborted. Only the  
Although it is not recommended, the host could abort a pending BDM command by issuing a low pulse on the BKGD pin, shorter than 128  
serial clock cycles, which will not be interpreted as the SYNC command. The ACK is actually aborted when a negative edge is perceived  
by the target in the BKGD pin. The short abort pulse should have at least 4 clock cycles keeping the BKGD pin low, to allow the negative  
edge to be detected by the target. In this case, the target will not execute the SYNC protocol, but the pending command will be aborted  
along with the ACK pulse. The potential problem with this abort procedure is when there is a conflict between the ACK pulse and the short  
abort pulse, where the target may not perceive the abort pulse. The worst case is when the pending command is a read command (i.e.,  
READ_BYTE). If the abort pulse is not perceived by the target, the host will attempt to send a new command after the abort pulse was  
issued, while the target expects the host to retrieve the accessed memory byte. In this case, host and target will run out of synchronism.  
However, if the command to be aborted is not a read command, the short abort pulse could be used. After a command is aborted, the  
target assumes the next negative edge, after the abort pulse, is the first bit of a new BDM command.  
NOTE  
The details about the short abort pulse are being provided only as a reference for the reader to better  
understand the BDM internal behavior. It is not recommended that this procedure be used in a real  
application.  
Since the host knows the target serial clock frequency, the SYNC command (used to abort a command) does not need to consider the  
lower possible target frequency. The host could issue a SYNC very close to the 128 serial clock cycles length, providing a small overhead  
on the pulse length, to assure the SYNC pulse will not be misinterpreted by the target. See Section 4.22.4.9, “SYNC — request timed  
reference pulse".  
Figure 88 shows a SYNC command being issued after a READ_BYTE, which aborts the READ_BYTE command. Note that, after the  
command is aborted, a new command could be issued by the host computer.  
READ_BYTE CMD is Aborted  
by the SYNC Request  
(Out of Scale)  
SYNC Response  
From the Target  
(Out of Scale)  
BKGD Pin READ_BYTE  
Host  
Memory Address  
Target  
READ_STATUS  
New BDM Command  
Host Target  
Host  
Target  
BDM Decode  
New BDM Command  
and Starts to Execute  
the READ_BYTE Command  
Figure 88. ACK abort procedure at the command level  
NOTE  
Figure 88 does not represent the signals in a true timing scale.  
Figure 89 shows a conflict between the ACK pulse and the SYNC request pulse. This conflict could occur if a POD device is connected  
to the target BKGD pin and the target is already in debug active mode. Consider that the target CPU is executing a pending BDM command  
at the exact moment the POD is being connected to the BKGD pin. In this case, an ACK pulse is issued along with the SYNC command.  
In this case, there is an electrical conflict between the ACK speedup pulse and the SYNC pulse. Since this is not a probable situation, the  
protocol does not prevent this conflict from happening.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
270/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
At Least 128 Cycles  
BDM Clock  
(Target MCU)  
ACK Pulse  
Target MCU  
Drives to  
BKGD Pin  
High-impedance  
Electrical Conflict  
Speedup Pulse  
Host and  
Host  
Drives SYNC  
To BKGD Pin  
Target Drive  
to BKGD Pin  
Host SYNC Request Pulse  
BKGD Pin  
16 Cycles  
Figure 89. ACK pulse and sync request conflict  
NOTE  
This information is being provided so that the MCU integrator will be aware that such a conflict could  
occur.  
The hardware handshake protocol is enabled by the ACK_ENABLE and disabled by the ACK_DISABLE BDM commands. This provides  
backwards compatibility with the existing POD devices, which are not able to execute the hardware handshake protocol. It also allows for  
new POD devices supporting the hardware handshake protocol, to freely communicate with the target device. If desired, without the need  
for waiting for the ACK pulse.  
The commands are described as follows:  
ACK_ENABLE — enables the hardware handshake protocol. The target will issue the ACK pulse when a CPU command is  
executed by the CPU. The ACK_ENABLE command itself also has the ACK pulse as a response.  
ACK_DISABLE — disables the ACK pulse protocol The host needs to use the worst case delay time at the appropriate places  
in the protocol.  
The default state of the BDM after reset is hardware handshake protocol disabled.  
All the read commands will ACK (if enabled) when the data bus cycle has completed and the data is then ready for reading out by the  
BKGD serial pin. All the write commands will ACK (if enabled) after the data has been received by the BDM through the BKGD serial pin,  
and when the data bus cycle is complete. See Section 4.22.4.3, “BDM hardware commands" and Section 4.22.4.4, “Standard BDM  
firmware commands" for more information on the BDM commands.  
The ACK_ENABLE sends an ACK pulse when the command has been completed. This feature could be used by the host to evaluate if  
the target supports the hardware handshake protocol. If an ACK pulse is issued in response to this command, the host knows that the  
target supports the hardware handshake protocol. If the target does not support the hardware handshake protocol the ACK pulse is not  
issued. In this case, the ACK_ENABLE command is ignored by the target since it is not recognized as a valid command.  
The BACKGROUND command issues an ACK pulse when the CPU changes from normal to background mode. The ACK pulse related  
to this command could be aborted using the SYNC command.  
The GO command issues an ACK pulse when the CPU exits from background mode. The ACK pulse related to this command could be  
aborted using the SYNC command.  
(267)  
The GO_UNTIL  
command is equivalent to a GO command with exception that the ACK pulse, in this case, is issued when the CPU  
enters into background mode. This command is an alternative to the GO command and should be used when the host wants to trace if a  
breakpoint match occurs and causes the CPU to enter active background mode. Note that the ACK is issued whenever the CPU enters  
BDM, which could be caused by a breakpoint match or by a BGND instruction being executed. The ACK pulse related to this command  
could be aborted using the SYNC command.  
The TRACE1 command has the related ACK pulse issued when the CPU enters background active mode after one instruction of the  
application program is executed. The ACK pulse related to this command could be aborted using the SYNC command.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
271/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.4.9 SYNC — request timed reference pulse  
The SYNC command is unlike other BDM commands, because the host does not necessarily know the correct communication speed to  
use for BDM communications until after it has analyzed the response to the SYNC command. To issue a SYNC command, the host should  
perform the following steps:  
1. Drive the BKGD pin low for at least 128 cycles at the lowest possible BDM serial communication frequency (The lowest serial  
communication frequency is determined by the settings for the VCO clock (CPMUSYNR). The BDM clock frequency is always  
VCO clock frequency divided by 8.)  
2. Drive BKGD high for a brief speedup pulse to get a fast rise time (this speedup pulse is typically one cycle of the host clock.)  
3. Remove all drive to the BKGD pin so it reverts to high-impedance.  
4. Listen to the BKGD pin for the sync response pulse.  
Upon detecting the SYNC request from the host, the target performs the following steps:  
1. Discards any incomplete command received or bit retrieved.  
2. Waits for BKGD to return to a logic one.  
3. Delays 16 cycles to allow the host to stop driving the high speedup pulse.  
4. Drives BKGD low for 128 cycles at the current BDM serial communication frequency.  
5. Drives a one-cycle high speedup pulse to force a fast rise time on BKGD.  
6. Removes all drive to the BKGD pin so it reverts to high-impedance.  
The host measures the low time of this 128 cycle SYNC response pulse and determines the correct speed for subsequent BDM  
communications. Typically, the host can determine the correct communication speed within a few percent of the actual target speed, and  
the communication protocol can easily tolerate speed errors of several percent.  
As soon as the SYNC request is detected by the target, any partially received command or bit retrieved is discarded. This is referred to  
as a soft-reset, equivalent to a time-out in the serial communication. After the SYNC response, the target will consider the next negative  
edge (issued by the host) as the start of a new BDM command or the start of new SYNC request.  
Another use of the SYNC command pulse is to abort a pending ACK pulse. The behavior is exactly the same as in a regular SYNC  
command. Note that one of the possible causes for a command to not be acknowledged by the target is a host-target synchronization  
problem. In this case, the command may not have been understood by the target, so an ACK response pulse will not be issued.  
4.22.4.10 Instruction tracing  
When a TRACE1 command is issued to the BDM in active BDM, the CPU exits the standard BDM firmware and executes a single  
instruction in the user code. Once this has occurred, the CPU is forced to return to the standard BDM firmware, the BDM is active, and  
ready to receive a new command. If the TRACE1 command is issued again, the next user instruction will be executed. This facilitates  
stepping or tracing through the user code one instruction at a time.  
If an interrupt is pending when a TRACE1 command is issued, the interrupt stacking operation occurs but no user instruction is executed.  
Once back in standard BDM firmware execution, the program counter points to the first instruction in the interrupt service routine.  
Be aware when tracing through the user code that the execution of the user code is done step by step, but peripherals are free running.  
Hence possible timing relations between CPU code execution and occurrence of events of other peripherals no longer exist.  
Do not trace the CPU instruction BGND used for soft breakpoints. Tracing over the BGND instruction will result in a return address pointing  
to BDM firmware address space.  
When tracing through user code which contains stop or wait instructions the following will happen when the stop or wait instruction is  
traced:  
The CPU enters stop or wait mode and the TRACE1 command can not be finished before leaving the low power mode. This is  
the case because BDM active mode can not be entered after the CPU executed the stop instruction. However, all BDM hardware  
commands except the BACKGROUND command are operational after tracing a stop or wait instruction, and still being in stop or  
wait mode. If system stop mode is entered (all bus masters are in stop mode), no BDM command is operational.  
As soon as stop or wait mode is exited, the CPU enters BDM active mode and the saved PC value points to the entry of the  
corresponding interrupt service routine.  
If the handshake feature is enabled, the corresponding ACK pulse of the TRACE1 command will be discarded when tracing a  
stop or wait instruction. Hence, there is no ACK pulse when BDM active mode is entered as part of the TRACE1 command, after  
CPU exited from stop or wait mode. All valid commands sent during CPU being in stop or wait mode or after CPU exited from  
stop or wait mode will have an ACK pulse. The handshake feature becomes disabled only when system stop mode has been  
reached. After a system stop mode, the handshake feature must be enabled again by sending the ACK_ENABLE command.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
272/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.22.4.11 Serial communication timeout  
The host initiates a host-to-target serial transmission by generating a falling edge on the BKGD pin. If BKGD is kept low for more than 128  
target clock cycles, the target understands that a SYNC command was issued. In this case, the target will keep waiting for a rising edge  
on BKGD, to answer the SYNC request pulse. If the rising edge is not detected, the target will keep waiting forever without any timeout  
limit.  
Consider now the case where the host returns BKGD to a logic one before 128 cycles. This is interpreted as a valid bit transmission, and  
not as a SYNC request. The target will keep waiting for another falling edge, marking the start of a new bit. If, a new falling edge is not  
detected by the target within 512 clock cycles, since the last falling edge, a timeout occurs and the current command is discarded without  
affecting memory or the operating mode of the MCU. This is referred to as a soft-reset.  
If a read command is issued, but the data is not retrieved within 512 serial clock cycles, a soft-reset will occur causing the command to  
be disregarded. The data is not available for retrieval after the timeout has occurred. This is expected behavior if the handshake protocol  
is not enabled. To allow the data to be retrieved, even with a large clock frequency mismatch (between BDM and CPU) when the hardware  
handshake protocol is enabled, the timeout between a read command and the data retrieval is disabled. Therefore, the host could wait  
for more then 512 serial clock cycles, and still be able to retrieve the data from an issued read command. However, once the handshake  
pulse (ACK pulse) is issued, the timeout feature is re-activated, meaning that the target will timeout after 512 clock cycles. The host needs  
to retrieve the data within a 512 serial clock cycles time frame after the ACK pulse had been issued. After that period, the read command  
is discarded and the data is no longer available for retrieval. Any negative edge in the BKGD pin after the timeout period is considered to  
be a new command or a SYNC request.  
Note that whenever a partially issued command, or partially retrieved data has occurred, the timeout in the serial communication is active.  
This means that if a time frame higher than 512 serial clock cycles is observed between two consecutive negative edges and the command  
being issued or data being retrieved is not complete, a soft-reset will occur causing the partially received command or data retrieved to  
be disregarded. The next negative edge in the BKGD pin, after a soft-reset has occurred, is considered by the target as the start of a new  
BDM command, or the start of a SYNC request pulse.  
4.23 S12 clock, reset, and power management unit (9S12I128PIMV1)  
4.23.1 Introduction  
This specification describes the function of the Clock, Reset, and Power Management Unit (9S12I128PIMV1).  
The Pierce oscillator (OSCLCP) provides a robust, low noise and low power external clock source. It is designed for optimal  
start-up margin with typical crystal oscillators  
The voltage regulator (IVREG) operates from the range 3.13 to 5.5 V. It provides all the required chip internal voltages and  
voltage monitors  
The Phase Locked Loop (PLL) provides a highly accurate frequency multiplier with internal filter  
The Internal Reference Clock (IRC1M) provides a1.0 MHz clock  
4.23.1.1 Features  
The Pierce Oscillator (OSCLCP) contains circuitry to dynamically control current gain in the output amplitude. This ensures a signal with  
low harmonic distortion, low power, and good noise immunity.  
Supports crystals or resonators from 4.0 to 16 MHz  
High noise immunity due to input hysteresis and spike filtering  
Low RF emissions with peak-to-peak swing limited dynamically  
Transconductance (gm) sized for optimum start-up margin for typical crystals  
Dynamic gain control eliminates the need for external current limiting resistor  
Integrated resistor eliminates the need for external bias resistor  
Low power consumption: Operates from an internal 1.8 V (nominal) supply, amplitude control limits power  
The Voltage Regulator (IVREG) has the following features:  
Input voltage range from 3.13 to 5.5 V  
Low voltage detect (LVD) with low voltage interrupt (LVI)  
Power-on reset (POR)  
Low voltage reset (LVR)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
273/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The Phase Locked Loop (PLL) has the following features:  
Highly accurate and phase locked frequency multiplier  
Configurable internal filter for best stability and lock time  
Frequency modulation for defined jitter and reduced emission  
Automatic frequency lock detector  
Interrupt request on entry or exit from locked condition  
Reference clock either external (crystal) or internal square wave (1.0 MHz IRC1M) based  
PLL stability is sufficient for LIN communication, even if using IRC1M as reference clock  
The Internal Reference Clock (IRC1M) has the following features:  
Trimmable in frequency  
Factory trimmed value for 1.0 MHz in Flash memory, can be overwritten by application if required  
Other features of the 9S12I128PIMV1 include  
Clock monitor to detect loss of crystal  
Bus Clock Generator  
Clock switch to select either PLLCLK or external crystal/resonator based bus clock  
PLLCLK divider to adjust system speed  
System Reset generation from the following possible sources:  
Power-on reset (POR)  
Low voltage reset (LVR)  
Illegal address access  
COP timeout  
Loss of oscillation (clock monitor fail)  
External pin RESET  
4.23.1.2 Modes of operation  
This subsection lists and briefly describes all operating modes supported by the 9S12I128PIMV1.  
4.23.1.2.1  
Run mode  
The voltage regulator is in Full Performance mode (FPM).  
The Phase Locked Loop (PLL) is on.  
The Internal Reference Clock (IRC1M) is on.  
PLL Engaged Internal (PEI)  
This is the default mode after system reset and power-on reset.  
The bus clock is based on the PLLCLK.  
After reset the PLL is configured for 64 MHz VCOCLK operation. Post divider is 0x03, so PLLCLK is VCOCLK divided by 4,  
that is 16 MHz and bus clock is 8.0 MHz. The PLL can be re-configured for other bus frequencies.  
The reference clock for the PLL (REFCLK) is based on internal reference clock IRC1M  
PLL Engaged External (PEE)  
The bus clock is based on the PLLCLK.  
This mode can be entered from default mode PEI by performing the following steps:  
Configure the PLL for desired bus frequency.  
Program the reference divider (REFDIV[3:0] bits) to divide down oscillator frequency if necessary.  
Enable the external oscillator (OSCE bit)  
PLL Bypassed External (PBE)  
The bus clock is based on the oscillator clock (OSCCLK).  
This mode can be entered from default mode PEI by performing the following steps:  
Enable the external oscillator (OSCE bit)  
Wait for oscillator to start up (UPOSC=1)  
Select the oscillator clock (OSCCLK) as bus clock (PLLSEL=0).  
The PLLCLK is still on to filter possible spikes of the external oscillator clock.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
274/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.1.2.2  
Wait mode  
For 9S12I128PIMV1 Wait mode is the same as Run mode.  
4.23.1.2.3  
Stop mode  
This mode is entered by executing the CPU STOP instruction.  
The voltage regulator is in Reduced Power mode (RPM).  
The Phase Locked Loop (PLL) is off.  
The internal reference clock (IRC1M) is off.  
Core clock, bus clock and BDM clock are stopped.  
Depending on the setting of the PSTP and the OSCE bit, Stop mode can be differentiated between Full Stop mode (PSTP = 0 or OSCE=0)  
and Pseudo Stop mode (PSTP = 1 and OSCE=1).  
Full Stop mode (PSTP = 0 or OSCE=0)  
The external oscillator (OSCLCP) is disabled.  
After wake-up from Full Stop mode the core clock and bus clock are running on PLLCLK (PLLSEL=1). After wake-up from Full  
Stop mode the COP and RTI are running on IRCCLK (COPOSCSEL=0, RTIOSCSEL=0).  
Pseudo Stop Mode (PSTP = 1 and OSCE=1)  
The external oscillator (OSCLCP) continues to run. If the respective enable bits are set the COP and RTI will continue to run.  
The clock configuration bits PLLSEL, COPOSCSEL, RTIOSCSEL are unchanged.  
NOTE  
When starting up the external oscillator (either by programming OSCE bit to 1 or on exit from Full  
Stop mode with OSCE bit already 1), the software must wait for a minimum time equivalent to the  
startup-time of the external oscillator t  
before entering Pseudo Stop mode.  
UPOSC  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
275/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.1.3 9S12I128PIMV1 block diagram  
Illegal Address Access  
MMC  
VDDRX  
VSS  
VDD, VDDF  
(core supplies)  
Low Voltage Interrupt VDDRX  
ILAF  
Low Voltage Interrupt  
LVDS  
LVIE  
Low Voltage Reset VDDRX  
Voltage  
Regulator  
3.13 to 5.5V  
LVRF  
COP timeout  
S12CPMU  
VSSRX  
Power-On Detect  
PORF  
Power-On Reset  
System Reset  
RESET  
Reset  
monitor fail  
UPOSC  
Generator  
Clock  
Monitor  
Oscillator status Interrupt  
OSCIE  
UPOSC=0 sets PLLSEL bit  
Loop  
CAN_OSCCLK  
Controlled  
Pierce  
EXTAL  
XTAL  
OSCCLK  
adaptive  
spike  
filter  
&
(to MSCAN)  
Oscillator  
(OSCLCP)  
4.0 MHz-  
OSCFILT[4:0]  
OSCBW  
PLLSEL  
REFDIV[3:0]  
IRCTRIM[9:0]  
16 MH  
POSTDIV[4:0]  
ECLK2X  
Internal  
Reference  
Clock  
Reference  
Divider  
Post  
(Core Clock)  
Divider  
1,2,...,32  
PLLCLK  
PSTP  
divide  
by 2  
ECLK  
(Bus Clock)  
(IRC1M)  
divide  
by 4  
IRCCLK  
(to LCD)  
OSCE  
VCOFRQ[1:0]  
divide  
by 8  
VCOCLK  
BDM Clock  
Phase  
locked  
REFCLK  
Lock  
detect  
Loop with  
internal  
Filter (PLL)  
FBCLK  
REFFRQ[1:0]  
PLL Lock Interrupt  
RTI Interrupt  
LOCK  
LOCKIE  
Divide by  
2*(SYNDIV+1)  
UPOSC  
UPOSC=0 clears  
SYNDIV[5:0]  
RTIE  
IRCCLK  
IRCCLK  
Real Time  
COP timeout  
to Reset  
Generator  
COP  
COPCLK  
RTICLK  
Interrupt (RTI)  
CPMURTI  
PRE  
Watchdog  
OSCCLK  
OSCCLK  
RTIOSCSEL  
COPOSCSEL  
CPMUCOP  
PCE  
Figure 90. Block diagram of 9S12I128PIMV1  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
276/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Figure 91 shows a block diagram of the OSCLCP.  
OSCCLK  
Peak  
Detector  
Gain Control  
VDD = 1.8 V  
VSS  
Rf  
XTAL  
EXTAL  
Figure 91. OSCLCP block diagram  
4.23.2 Signal description  
This section lists and describes the signals that connect off chip.  
4.23.2.1 RESET  
Pin RESET is an active-low bidirectional pin. As an input, it initializes the MCU asynchronously to a known start-up state. As an open-drain  
output, it indicates that an MCU-internal reset has been triggered.  
4.23.2.2 EXTAL and XTAL  
These pins provide the interface for a crystal to control the internal clock generator circuitry. EXTAL is the external clock input or the input  
to the crystal oscillator amplifier. XTALis the output of the crystal oscillator amplifier. The MCU internal OSCCLK is derived from the EXTAL  
input frequency. If OSCE=0, the EXTAL pin is pulled down by an internal resistor of approximately 200 k, and the XTAL pin is pulled  
down by an internal resistor of approximately 700 k.  
NOTE  
NXP recommends an evaluation of the application board and chosen resonator or crystal by the  
resonator or crystal supplier. Loop controlled circuit is not suited for overtone resonators and crystals.  
4.23.2.3 VSS — ground pin  
VSS must be grounded.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
277/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.2.4 VDDRX, VSSRX— regulator power input pin and pad supply pins  
VDDRX is the power input of IVREG and the PAD positive supply pin. All currents sourced into the regulator loads flow through this pin.The  
VDDRX/VSSX supply domain is monitored by the low voltage reset circuit. An off-chip decoupling capacitor (100 nF...220 nF, X7R  
ceramic) between VDDRX and VSSX can further improve the quality of this supply.  
4.23.2.5 VDD — internal regulator output supply (core logic)  
Node VDD is a device internal supply output of the voltage regulator that provides the power supply for the core logic. This supply domain  
is monitored by the low voltage reset circuit.  
4.23.2.6 VDDF — internal regulator output supply (NVM logic)  
Node VDDF is a device internal supply output of the voltage regulator that provides the power supply for the NVM logic. This supply  
domain is monitored by the low voltage reset circuit  
4.23.3 Memory map and registers  
This section provides a detailed description of all registers accessible in the 9S12I128PIMV1.  
4.23.3.1 Module memory map  
The 9S12I128PIMV1 registers are shown in Table 401.  
Table 401. CPMU register summary  
Address  
Name  
Bit 7  
6
5
4
0
3
2
1
Bit 0  
R
W
R
CPMU  
SYNR  
0x0034  
VCOFRQ[1:0]  
SYNDIV[5:0]  
0
0
CPMU  
REFDIV  
0x0035  
0x0036  
0x0037  
0x0038  
0x0039  
0x003A  
0x003B  
0x003C  
0x003D  
REFFRQ[1:0]  
REFDIV[3:0]  
W
R
0
0
CPMU  
POSTDIV  
POSTDIV[4:0]  
W
R
LOCK  
0
UPOSC  
0
CPMUFLG  
CPMUINT  
RTIF  
RTIE  
PORF  
0
LVRF  
0
LOCKIF  
ILAF  
0
OSCIF  
OSCIE  
W
R
LOCKIE  
0
W
R
0
RTI  
OSCSEL  
COP  
OSCSEL  
CPMUCLKS  
CPMUPLL  
CPMURTI  
PLLSEL  
0
PSTP  
0
PRE  
0
PCE  
0
W
R
0
0
FM1  
FM0  
W
R
RTDEC  
RTR6  
RTR5  
RTR4  
0
RTR3  
0
RTR2  
RTR1  
RTR0  
W
R
0
CPMUCOP  
RESERVEDC  
WCOP  
0
RSBCK  
0
CR2  
0
CR1  
0
CR0  
0
W
R
WRTMASK  
0
0
0
W
= Unimplemented or Reserved  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
278/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 401. CPMU register summary (continued)  
Address  
Name  
Bit 7  
0
6
0
5
0
4
0
3
0
2
0
1
0
Bit 0  
0
R
W
R
0x003E  
RESERVEDC  
0
Bit 7  
0
0
Bit 6  
0
0
Bit 5  
0
0
Bit 4  
0
0
Bit 3  
0
0
Bit 2  
0
0
Bit 1  
0
0
Bit 0  
0
CPMU  
ARMCOP  
0x003F  
0x02F0  
0x02F1  
0x02F2  
0x02F3  
0x02F4  
0x02F5  
0x02F6  
0x02F7  
0x02F8  
0x02F9  
W
R
RESERVED  
W
R
0
0
0
0
0
0
0
LVDS  
CPMU  
LVCTL  
LVIE  
LVIF  
W
R
RESERVED  
RESERVED  
RESERVED  
RESERVED  
W
R
0
0
W
R
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
RESERVEDC  
RESERVED  
W
R
W
R
CPMU  
IRCTRIMH  
TCTRIM[4:0]  
IRCTRIM[9:8]  
W
R
CPMU  
IRCTRIML  
IRCTRIM[7:0]  
W
OSCPINS_E  
N
R
0x02FA  
CPMUOSC  
OSCE  
0
OSCBW  
0
OSCFILT[4:0]  
0
W
R
0
0
0
0
0
0
0
0
0x02FB  
0x02FC  
CPMUPROT  
RESERVEDC  
PROT  
0
W
R
0
0
0
W
= Unimplemented or Reserved  
4.23.3.2 Register descriptions  
This section describes all the 9S12I128PIMV1 registers and their individual bits. Address order is as listed in Table 401.  
4.23.3.2.1  
9S12I128PIMV1 synthesizer register (CPMUSYNR)  
The CPMUSYNR register controls the multiplication factor of the PLL and selects the VCO frequency range.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
279/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 402. 9S12I128PIMV1 synthesizer register (CPMUSYNR)  
0x0034  
7
0
6
1
5
0
4
1
3
1
2
1
1
1
0
1
R
W
VCOFRQ[1:0]  
SYNDIV[5:0]  
Reset  
Read: Anytime  
Write: Anytime if PROT=0 (CPMUPROT register) and PLLSEL=1 (CPMUCLKS register), Else write has no effect.  
NOTE  
Writing to this register clears the LOCK and UPOSC status bits.  
f
= 2 f  
 SYNDIV + 1  
If PLL has locked (LOCK=1)  
VCO  
REF  
NOTE  
must be within the specified VCO frequency lock range. Bus frequency f  
f
must not exceed  
BUS  
VCO  
the specified maximum.  
The VCOFRQ[1:0] bits are used to configure the VCO gain for optimal stability and lock time. For correct PLL operation, the VCOFRQ[1:0]  
bits have to be selected according to the actual target VCOCLK frequency, as shown in Table 403. Setting the VCOFRQ[1:0] bits  
incorrectly can result in a non functional PLL (no locking and/or insufficient stability).  
Table 403. VCO clock frequency selection  
VCOCLK Frequency Ranges  
32 MHz <= f <= 48 MHz  
VCOFRQ[1:0]  
00  
01  
10  
11  
VCO  
48 MHz < f  
<= 64 MHz  
VCO  
Reserved  
Reserved  
4.23.3.2.2  
9S12I128PIMV1 reference divider register (CPMUREFDIV)  
The CPMUREFDIV register provides a finer granularity for the PLL multiplier steps when using the external oscillator as reference.  
Table 404. 9S12I128PIMV1 reference divider register (CPMUREFDIV)  
0x0035  
7
0
6
0
5
0
4
0
3
1
2
1
1
1
0
1
R
W
REFFRQ[1:0]  
REFDIV[3:0]  
Reset  
0
0
Read: Anytime  
Write: Anytime if PROT=0 (CPMUPROT register) and PLLSEL=1 (CPMUCLKS register), else write has no effect.  
NOTE  
Write to this register clears the LOCK and UPOSC status bits.  
f
OSC  
------------------------------------  
f
=
If OSCLCP is enabled (OSCE=1)  
If OSCLCP is disabled (OSCE=0)  
REF  
REFDIV + 1  
f
= f  
REF  
IRC1M  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
280/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The REFFRQ[1:0] bits are used to configure the internal PLL filter for optimal stability and lock time. For correct PLL operation, the  
REFFRQ[1:0] bits have to be selected according to the actual REFCLK frequency as shown in Table 405.  
If IRC1M is selected as REFCLK (OSCE=0) the PLL filter is fixed configured for the 1.0 MHz <= f  
be written but will have no effect on the PLL filter configuration.  
<= 2.0 MHz range. The bits can still  
REF  
For OSCE=1, setting the REFFRQ[1:0] bits incorrectly can result in a non functional PLL (no locking and/or insufficient stability).  
Table 405. Reference clock frequency selection if OSC_LCP Is enabled  
REFCLK Frequency Ranges (OSCE=1)  
REFFRQ[1:0]  
1.0 MHz <= f  
<= 2.0 MHz  
<= 6.0 MHz  
00  
01  
10  
11  
REF  
2.0 MHz < f  
6.0 MHz < f  
REF  
<= 12.0 MHz  
REF  
f
>12.0 MHz  
REF  
4.23.3.2.3  
9S12I128PIMV1 post divider register (CPMUPOSTDIV)  
The POSTDIV register controls the frequency ratio between the VCOCLK and the PLLCLK.  
Table 406. 9S12I128PIMV1 post divider register (CPMUPOSTDIV)  
0x0036  
7
0
6
0
5
0
4
0
3
0
2
1
1
0
1
R
W
POSTDIV[4:0]  
0
Reset  
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Anytime if PLLSEL=1. Else write has no effect.  
f
VCO  
----------------------------------------  
If PLL is locked (LOCK=1)  
If PLL is not locked (LOCK=0)  
If PLL is selected (PLLSEL=1)  
f
=
=
PLL  
POSTDIV + 1  
f
VCO  
--------------  
f
PLL  
4
f
PLL  
------------  
f
=
bus  
2
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
281/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.4  
9S12I128PIMV1 flags register (CPMUFLG)  
This register provides 9S12I128PIMV1 status bits and flags.  
Table 407. 9S12I128PIMV1 flags register (CPMUFLG)  
0x0037  
7
RTIF  
0
6
5
4
LOCKIF  
0
3
2
1
OSCIF  
0
0
R
W
LOCK  
UPOSC  
PORF  
LVRF  
ILAF  
(269)  
(270)  
(271)  
Reset  
0
0
= Unimplemented or Reserved  
Notes  
269. 1. PORF is set to 1 when a power on reset occurs. Unaffected by System Reset.  
270. 2. LVRF is set to 1 when a low voltage reset occurs. Unaffected by System Reset. Set by power on reset.  
271. 3. ILAF is set to 1 when an illegal address reset occurs. Unaffected by System Reset. Cleared by power on reset.  
Read: Anytime  
Write: Refer to each bit for individual write conditions  
Table 408. CPMUFLG field descriptions  
Field  
Description  
Real Time Interrupt Flag — RTIF is set to 1 at the end of the RTI period. This flag can only be cleared by writing a 1. Writing a 0 has  
no effect. If enabled (RTIE=1), RTIF causes an interrupt request.  
7
0
1
RTI timeout has not yet occurred.  
RTI timeout has occurred.  
RTIF  
Power on Reset Flag — PORF is set to 1 when a power on reset occurs. This flag can only be cleared by writing a 1. Writing a 0 has  
no effect.  
6
0
1
Power on reset has not occurred.  
Power on reset has occurred.  
PORF  
Low Voltage Reset Flag — LVRF is set to 1 when a low voltage reset occurs. This flag can only be cleared by writing a 1. Writing a 0  
has no effect.  
5
0
1
Low voltage reset has not occurred.  
Low voltage reset has occurred.  
LVRF  
PLL Lock Interrupt Flag — LOCKIF is set to 1 when LOCK status bit changes. This flag can only be cleared by writing a 1. Writing a 0  
has no effect.If enabled (LOCKIE=1), LOCKIF causes an interrupt request.  
4
0
1
No change in LOCK bit.  
LOCK bit has changed.  
LOCKIF  
Lock Status Bit — LOCK reflects the current state of PLL lock condition. Writes have no effect. While PLL is unlocked (LOCK=0) f  
PLL  
is f  
/ 4 to protect the system from high core clock frequencies during the PLL stabilization time t  
.
3
VCO  
lock  
0
1
VCOCLK is not within the desired tolerance of the target frequency. f  
= f  
/4.  
LOCK  
PLL  
= f  
VCO  
VCOCLK is within the desired tolerance of the target frequency. f  
/(POSTDIV+1).  
PLL  
VCO  
Illegal Address Reset Flag — ILAF is set to 1 when an illegal address reset occurs. Refer to MMC chapter for details. This flag can only  
be cleared by writing a 1. Writing a 0 has no effect.  
2
0
1
Illegal address reset has not occurred.  
Illegal address reset has occurred.  
ILAF  
Oscillator Interrupt Flag — OSCIF is set to 1 when UPOSC status bit changes. This flag can only be cleared by writing a 1. Writing a  
0 has no effect.If enabled (OSCIE=1), OSCIF causes an interrupt request.  
1
0
1
No change in UPOSC bit.  
UPOSC bit has changed.  
OSCIF  
Oscillator Status Bit — UPOSC reflects the status of the oscillator. Writes have no effect. While UPOSC=0 the OSCCLK going to the  
MSCAN module is off. Entering Full Stop Mode UPOSC is cleared.  
0
0
1
The oscillator is off or oscillation is not qualified by the PLL.  
The oscillator is qualified by the PLL.  
UPOSC  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
282/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
The adaptive oscillator filter uses the VCO clock as a reference to continuously qualify the external  
oscillator clock. As a result, the PLL is always active and a valid PLL configuration is required for the  
system to work properly. Furthermore, the adaptive oscillator filter is used to determine the status of  
the external oscillator (reflected in the UPOSC bit). Since this function also relies on the VCO clock,  
loosing PLL lock status (LOCK=0, except for entering Pseudo Stop mode) means loosing the  
oscillator status information as well (UPOSC=0).  
4.23.3.2.5  
9S12I128PIMV1 interrupt enable register (CPMUINT)  
This register enables 9S12I128PIMV1 interrupt requests.  
Table 409. 9S12I128PIMV1 interrupt enable register (CPMUINT)  
0x0038  
7
RTIE  
0
6
0
5
0
4
LOCKIE  
0
3
0
2
0
1
OSCIE  
0
0
0
R
W
Reset  
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Anytime  
Table 410. CRGINT field descriptions  
Field  
Description  
Real Time Interrupt Enable Bit  
7
0
1
Interrupt requests from RTI are disabled.  
Interrupt will be requested whenever RTIF is set.  
RTIE  
PLL Lock Interrupt Enable Bit  
4
0
1
PLL LOCK interrupt requests are disabled.  
Interrupt will be requested whenever LOCKIF is set.  
LOCKIE  
Oscillator Corrupt Interrupt Enable Bit  
1
0
1
Oscillator Corrupt interrupt requests are disabled.  
Interrupt will be requested whenever OSCIF is set.  
OSCIE  
4.23.3.2.6  
9S12I128PIMV1 clock select register (CPMUCLKS)  
This register controls 9S12I128PIMV1 clock selection.  
Table 411. 9S12I128PIMV1 clock select register (CPMUCLKS)  
0x0039  
7
PLLSEL  
1
6
PSTP  
0
5
0
4
0
3
PRE  
0
2
PCE  
0
1
0
R
W
RTI  
OSCSEL  
COP  
OSCSEL  
Reset  
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write:  
1. Only possible if PROT=0 (CPMUPROT register) in all MCU modes (Normal and Special mode).  
2. All bits in Special mode (if PROT=0).  
3. PLLSEL, PSTP, PRE, PCE, RTIOSCSEL: In Normal mode (if PROT=0).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
283/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4. COPOSCSEL: In Normal mode (if PROT=0) until CPMUCOP write once is taken. If COPOSCSEL was cleared by UPOSC=0  
(entering Full Stop mode with COPOSCSEL=1 or insufficient OSCCLK quality), then COPOSCSEL can be set again once.  
NOTE  
After writing CPMUCLKS register, it is strongly recommended to read back CPMUCLKS register to  
make sure that write of PLLSEL, RTIOSCSEL and COPOSCSEL was successful.  
Table 412. CPMUCLKS descriptions  
Field  
Description  
PLL Select Bit  
This bit selects the PLLCLK as source of the system clocks (core clock and bus clock).  
PLLSEL can only be set to 0, if UPOSC=1.  
UPOSC= 0 sets the PLLSEL bit.  
7
PLLSEL  
Entering Full Stop mode sets the PLLSEL bit.  
0
1
System clocks are derived from OSCCLK if oscillator is up (UPOSC=1, f  
= f  
/ 2.  
OSC  
BUS  
System clocks are derived from PLLCLK, f  
= f  
/ 2.  
PLL  
BUS  
Pseudo Stop Bit  
This bit controls the functionality of the oscillator during Stop mode.  
0
1
Oscillator is disabled in Stop mode (Full Stop mode).  
Oscillator continues to run in Stop mode (Pseudo Stop mode), option to run RTI and COP.  
6
Note: Pseudo Stop mode allows for faster STOP recovery and reduces the mechanical stress and aging of the resonator in case of  
frequent STOP conditions at the expense of a slightly increased power consumption.  
PSTP  
Note: When starting up the external oscillator (either by programming OSCE bit to 1 or on exit from Full Stop mode with OSCE bit is  
already 1) the software must wait for a minimum time equivalent to the startup time of the external oscillator t  
entering Pseudo Stop mode.  
before  
UPOSC  
RTI Enable During Pseudo Stop Bit — PRE enables the RTI during Pseudo Stop mode.  
3
PRE  
0
1
RTI stops running during Pseudo Stop mode.  
RTI continues running during Pseudo Stop mode if RTIOSCSEL=1.  
Note: If PRE=0 or RTIOSCSEL=0 then the RTI will go static while Stop mode is active. The RTI counter will not be reset.  
COP Enable During Pseudo Stop Bit — PCE enables the COP during Pseudo Stop mode.  
2
PCE  
0
1
COP stops running during Pseudo Stop mode  
COP continues running during Pseudo Stop mode if COPOSCSEL=1  
Note: If PCE=0 or COPOSCSEL=0 then the COP will go static while Stop mode is active. The COP counter will not be reset.  
RTI Clock Select— RTIOSCSELselects the clock source to the RTI. Either IRCCLK or OSCCLK. Changing the RTIOSCSEL bit re-starts  
the RTI timeout period.  
RTIOSCSEL can only be set to 1, if UPOSC=1.  
UPOSC= 0 clears the RTIOSCSEL bit.  
1
RTIOSCSEL  
0
1
RTI clock source is IRCCLK.  
RTI clock source is OSCCLK.  
COP Clock Select— COPOSCSEL selects the clock source to the COP. Either IRCCLK or OSCCLK. Changing the COPOSCSEL bit  
re-starts the COP timeout period.  
COPOSCSEL can only be set to 1, if UPOSC=1.  
UPOSC= 0 clears the COPOSCSEL bit.  
0
COPOSCSEL  
0
1
COP clock source is IRCCLK.  
COP clock source is OSCCLK  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
284/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.7  
9S12I128PIMV1 PLL control register (CPMUPLL)  
This register controls the PLL functionality.  
Table 413. 9S12I128PIMV1 PLL control register (CPMUPLL)  
0x003A  
7
0
6
0
5
FM1  
0
4
FM0  
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
Read: Anytime  
Write: Anytime if PROT=0 (CPMUPROT register) and PLLSEL=1 (CPMUCLKS register). Else write has no effect.  
NOTE  
Write to this register clears the LOCK and UPOSC status bits.  
NOTE  
Care should be taken to ensure that the bus frequency does not exceed the specified maximum when  
frequency modulation is enabled.  
NOTE  
The frequency modulation (FM1 and FM0) can not be used if the Adaptive Oscillator Filter is enabled.  
Table 414. CPMUPLL field descriptions  
Field  
Description  
5, 4  
FM1, FM0  
PLL Frequency Modulation Enable Bits — FM1 and FM0 enable frequency modulation on the VCOCLK. This is to reduce noise  
emission. The modulation frequency is f divided by 16. See Table 415 for coding.  
REF  
Table 415. FM Amplitude selection  
FM1  
FM0  
FM amplitude /f  
variation  
VCO  
0
0
1
1
0
1
0
1
FM off  
1%  
2%  
4%  
4.23.3.2.8  
9S12I128PIMV1 RTI control register (CPMURTI)  
This register selects the timeout period for the Real Time Interrupt. The clock source for the RTI is either IRCCLK or OSCCLK depending  
on the setting of the RTIOSCSEL bit. In Stop mode with PSTP=1 (Pseudo Stop mode) and RTIOSCSEL=1 the RTI continues to run, else  
the RTI counter halts in Stop mode.  
Table 416. 9S12I128PIMV1 RTI control register (CPMURTI)  
0x003B  
7
RTDEC  
0
6
RTR6  
0
5
RTR5  
0
4
RTR4  
0
3
RTR3  
0
2
RTR2  
0
1
RTR1  
0
0
RTR0  
0
R
W
Reset  
Read: Anytime  
Write: Anytime  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
285/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
A write to this register starts the RTI timeout period. A change of the RTIOSCSEL bit (writing a  
different value or loosing UPOSC status) re-starts the RTI timeout period.  
Table 417. CPMURTI field descriptions  
Field  
Description  
Decimal or Binary Divider Select Bit — RTDEC selects decimal or binary based prescaler values.  
7
0
1
Binary based divider value. See Table 418  
Decimal based divider value. See Table 419  
RTDEC  
6–4  
RTR[6:4]  
Real Time Interrupt Prescale Rate Select Bits — These bits select the prescale rate for the RTI. See Table 418 and Table 419.  
3–0  
RTR[3:0]  
Real Time Interrupt Modulus Counter Select Bits — These bits select the modulus counter target value to provide additional  
granularity.Table 418 and Table 419 show all possible divide values selectable by the CPMURTI register.  
Table 418. RTI frequency divide rates for RTDEC = 0  
RTR[6:4] =  
RTR[3:0]  
000  
001  
010  
011  
100  
101  
110  
111  
10  
11  
12  
13  
14  
15  
16  
(OFF)  
(2  
)
(2  
)
(2  
)
(2  
)
(2  
)
(2  
)
(2 )  
(272)  
10  
11  
12  
13  
14  
15  
16  
0000 (1)  
0001 (2)  
0010 (3)  
0011 (4)  
0100 (5)  
0101 (6)  
0110 (7)  
0111 (8)  
1000 (9)  
1001 (10)  
1010 (11)  
1011 (12)  
1100 (13)  
1101 (14)  
1110 (15)  
1111 (16)  
OFF  
2
2
2
2
2
2
2
10  
10  
10  
10  
10  
10  
10  
10  
11  
11  
11  
11  
11  
11  
11  
11  
12  
12  
12  
12  
12  
12  
12  
12  
13  
13  
13  
13  
13  
13  
13  
13  
14  
14  
14  
14  
14  
14  
14  
14  
15  
15  
15  
15  
15  
15  
15  
15  
16  
16  
16  
16  
16  
16  
16  
16  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
2x2  
3x2  
4x2  
5x2  
6x2  
7x2  
8x2  
9x2  
10  
10  
10  
10  
10  
10  
10  
11  
11  
11  
11  
11  
11  
11  
12  
12  
12  
12  
12  
12  
12  
13  
13  
13  
13  
13  
13  
13  
14  
14  
14  
14  
14  
14  
14  
15  
15  
15  
15  
15  
15  
15  
16  
16  
16  
16  
16  
16  
16  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
10x2  
11x2  
12x2  
13x2  
14x2  
15x2  
16x2  
Notes  
272. Denotes the default value out of reset.This value should be used to disable the RTI to ensure future backwards compatibility.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
286/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 419. RTI frequency divide rates for RTDEC=1  
RTR[3:0]  
RTR[6:4] =  
100  
000  
001  
010  
011  
101  
110  
111  
3
3
3
3
3
3
3
3
(1x10 )  
(2x10 )  
(5x10 )  
(10x10 )  
(20x10 )  
(50x10 )  
(100x10 )  
(200x10 )  
3
3
3
3
3
3
3
3
0000 (1)  
0001 (2)  
0010 (3)  
0011 (4)  
0100 (5)  
0101 (6)  
0110 (7)  
0111 (8)  
1000 (9)  
1001 (10)  
1010 (11)  
1011 (12)  
1100 (13)  
1101 (14)  
1110 (15)  
1111 (16)  
1x10  
2x10  
5x10  
10x10  
20x10  
50x10  
100x10  
200x10  
3
3
3
3
3
3
3
3
2x10  
4x10  
10x10  
20x10  
40x10  
100x10  
200x10  
400x10  
3
3
3
3
3
3
3
3
3x10  
6x10  
15x10  
30x10  
60x10  
150x10  
300x10  
600x10  
3
3
3
3
3
3
3
3
4x10  
8x10  
20x10  
40x10  
80x10  
200x10  
400x10  
800x10  
3
3
3
3
3
3
3
6
5x10  
10x10  
25x10  
50x10  
100x10  
250x10  
500x10  
1x10  
3
3
3
3
3
3
3
6
6x10  
12x10  
30x10  
60x10  
120x10  
300x10  
600x10  
1.2x10  
3
3
3
3
3
3
3
6
7x10  
14x10  
35x10  
70x10  
140x10  
350x10  
700x10  
1.4x10  
3
3
3
3
3
3
3
6
8x10  
16x10  
40x10  
80x10  
160x10  
400x10  
800x10  
1.6x10  
3
3
3
3
3
3
3
6
9x10  
18x10  
45x10  
90x10  
180x10  
450x10  
900x10  
1.8x10  
3
3
3
3
3
3
6
6
10 x10  
20x10  
50x10  
100x10  
200x10  
500x10  
1x10  
2x10  
3
3
3
3
3
3
6
6
11 x10  
22x10  
55x10  
110x10  
220x10  
550x10  
1.1x10  
2.2x10  
3
3
3
3
3
3
6
6
12x10  
24x10  
60x10  
120x10  
240x10  
600x10  
1.2x10  
2.4x10  
3
3
3
3
3
3
6
6
13x10  
26x10  
65x10  
130x10  
260x10  
650x10  
1.3x10  
2.6x10  
3
3
3
3
3
3
6
6
14x10  
28x10  
70x10  
140x10  
280x10  
700x10  
1.4x10  
2.8x10  
3
3
3
3
3
3
6
6
15x10  
30x10  
75x10  
150x10  
300x10  
750x10  
1.5x10  
3x10  
3
3
3
3
3
3
6
6
16x10  
32x10  
80x10  
160x10  
320x10  
800x10  
1.6x10  
3.2x10  
4.23.3.2.9  
9S12I128PIMV1 COP control register (CPMUCOP)  
This register controls the COP (Computer Operating Properly) watchdog. The clock source for the COP is either IRCCLK or OSCCLK  
depending on the setting of the COPOSCSEL bit. In Stop mode with PSTP=1(Pseudo Stop mode), COPOSCSEL=1 and PCE=1 the COP  
continues to run, else the COP counter halts in Stop mode.  
Table 420. 9S12I128PIMV1 COP control register (CPMUCOP)  
0x003C  
7
WCOP  
F
6
RSBCK  
0
5
4
0
3
0
2
CR2  
F
1
CR1  
F
0
CR0  
F
R
W
0
WRTMASK  
0
Reset  
0
0
After de-assert of System Reset the values are automatically loaded from the Flash memory. See Device specification for details.  
= Unimplemented or Reserved  
Read: Anytime  
Write:  
1. RSBCK: anytime in Special Mode; write to “1” but not to “0” in Normal mode  
2. WCOP, CR2, CR1, CR0:  
Anytime in Special mode, when WRTMASK is 0, otherwise it has no effect  
Write once in Normal mode, when WRTMASK is 0, otherwise it has no effect.  
Writing CR[2:0] to “000” has no effect, but counts for the “write once” condition.  
Writing WCOP to “0” has no effect, but counts for the “write once” condition.  
When a non-zero value is loaded from Flash to CR[2:0] the COP timeout period is started.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
287/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
A change of the COPOSCSEL bit (writing a different value or loosing UPOSC status) re-starts the COP timeout period.  
In Normal mode the COP timeout period is restarted if either of these conditions is true:  
1. Writing a non-zero value to CR[2:0] (anytime in Special mode, once in Normal mode) with WRTMASK = 0.  
2. Writing WCOP bit (anytime in Special mode, once in Normal mode) with WRTMASK = 0.  
3. Changing RSBCK bit from “0” to “1”.  
In Special mode, any write access to CPMUCOP register restarts the COP timeout period.  
Table 421. CPMUCOP field descriptions  
Field  
Description  
Window COP Mode Bit — When set, a write to the CPMUARMCOP register must occur in the last 25% of the selected period. A write  
during the first 75% of the selected period generates a COP reset. As long as all writes occur during this window, $55 can be written as  
often as desired. Once $AA is written after the $55, the timeout logic restarts and the user must wait until the next window before writing  
to CPMUARMCOP. Table 422 shows the duration of this window for the seven available COP rates.  
7
WCOP  
0
1
Normal COP operation  
Window COP operation  
COP and RTI Stop in Active BDM Mode Bit  
6
0
1
Allows the COP and RTI to keep running in Active BDM mode.  
Stops the COP and RTI counters whenever the part is in Active BDM mode.  
RSBCK  
Write Mask for WCOP and CR[2:0] Bit — This write-only bit serves as a mask for the WCOP and CR[2:0] bits while writing the  
CPMUCOP register. It is intended for BDM writing the RSBCK without changing the content of WCOP and CR[2:0].  
5
0
1
Write of WCOP and CR[2:0] has an effect with this write of CPMUCOP  
Write of WCOP and CR[2:0] has no effect with this write of CPMUCOP. (Does not count for “write once”.)  
WRTMASK  
COP Watchdog Timer Rate Select — These bits select the COP timeout rate (see Table 422). Writing a nonzero value to CR[2:0]  
enables the COP counter and starts the timeout period. A COP counter timeout causes a System Reset. This can be avoided by  
periodically (before timeout) initializing the COP counter via the CPMUARMCOP register.  
While all of the following four conditions are true the CR[2:0], WCOP bits are ignored and the COP operates at highest timeout period (2  
cycles) in normal COP mode (Window COP mode disabled):  
2–0  
CR[2:0]  
24  
1) COP is enabled (CR[2:0] is not 000)  
2) BDM mode active  
3) RSBCK = 0  
4) Operation in Special mode  
Table 422. COP watchdog rates  
COPCLK  
CR2  
CR1  
CR0  
Cycles to Time-out (COPCLK is either IRCCLK or  
OSCCLK depending on the COPOSCSEL bit)  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
COP disabled  
14  
2
16  
2
18  
2
20  
2
22  
2
23  
2
24  
2
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
288/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.10 Reserved register CPMUTEST0  
NOTE  
This reserved register is designed for factory test purposes only, and is not intended for general user  
access. Writing to this register when in Special mode can alter the 9S12I128PIMV1’s functionality.  
Table 423. Reserved register (CPMUTEST0)  
0x003D  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Only in Special mode  
4.23.3.2.11 Reserved register CPMUTEST1  
NOTE  
This reserved register is designed for factory test purposes only, and is not intended for general user  
access. Writing to this register when in Special mode can alter the 9S12I128PIMV1’s functionality.  
Table 424. Reserved register (CPMUTEST1)  
0x003E  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Only in Special Mode  
4.23.3.2.12 9S12I128PIMV1 COP Timer Arm/reset Register (CPMUARMCOP)  
This register is used to restart the COP timeout period.  
Table 425. 9S12I128PIMV1 CPMUARMCOP register  
0x003F  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Bit 7  
0
Bit 6  
0
Bit 5  
0
Bit 4  
0
Bit 3  
0
Bit 2  
0
Bit 1  
0
Bit 0  
0
Reset  
Read: Always reads $00  
Write: Anytime  
When the COP is disabled (CR[2:0] = “000”) writing to this register has no effect.  
When the COP is enabled by setting CR[2:0] nonzero, the following applies:  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
289/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Writing any value other than $55 or $AA causes a COP reset. To restart the COP timeout period write $55 followed by a write of  
$AA. These writes do not need to occur back-to-back, but the sequence ($55, $AA) must be completed prior to COP end of  
timeout period to avoid a COP reset. Sequences of $55 writes are allowed. When the WCOP bit is set, $55 and $AA writes must  
be done in the last 25% of the selected timeout period; writing any value in the first 75% of the selected period will cause a COP  
reset.  
4.23.3.2.13 Low-voltage control register (CPMULVCTL)  
The CPMULVCTL register allows the configuration of the low-voltage detect features.  
Table 426. Low-voltage control register (CPMULVCTL)  
0x02F1  
7
0
6
0
5
0
4
0
3
0
2
1
LVIE  
0
0
LVIF  
U
R
W
LVDS  
Reset  
0
0
0
0
0
U
The Reset state of LVDS and LVIF depends on the external supplied VDDXR level  
= Unimplemented or Reserved  
Read: Anytime  
Write: LVIE and LVIF are write anytime, LVDS is read only  
Table 427. CPMULVCTL field descriptions  
Field  
Description  
Low-voltage Detect Status Bit — This read-only status bit reflects the voltage level on VDDXR. Writes have no effect.  
2
0
1
Input voltage VDDXR is above level V  
Input voltage VDDRX is below level V  
or RPM.  
and FPM.  
LVID  
LVIA  
LVDS  
Low-voltage Interrupt Enable Bit  
1
LVIE  
0
1
Interrupt request is disabled.  
Interrupt will be requested whenever LVIF is set.  
Low-voltage Interrupt Flag — LVIF is set to 1 when LVDS status bit changes. This flag can only be cleared by writing a 1. Writing a 0  
has no effect. If enabled (LVIE = 1), LVIF causes an interrupt request.  
0
0
1
No change in LVDS bit.  
LVDS bit has changed.  
LVIF  
4.23.3.2.14 Reserved register CPMUTEST3  
NOTE  
This reserved register is designed for factory test purposes only, and is not intended for general user  
access. Writing to this register when in Special mode can alter the 9S12I128PIMV1’s functionality.  
Table 428. Reserved register (CPMUTEST3)  
0x02F6  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Only in Special mode  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
290/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.15 9S12I128PIMV1 IRC1M trim registers (CPMUIRCTRIMH / CPMUIRCTRIML)  
Table 430. 9S12I128PIMV1 IRC1M trim high register (CPMUIRCTRIMH)  
0x02F8  
15  
F
14  
F
13  
TCTRIM[4:0]  
F
12  
F
11  
10  
0
9
8
F
R
W
IRCTRIM[9:8]  
Reset  
0
0
F
After de-assert of System Reset a factory programmed trim value is automatically loaded from the Flash memory to provide trimmed Internal Reference  
Frequency f  
.
IRC1M_TRIM  
Table 431. 9S12I128PIMV1 IRC1M trim low register (CPMUIRCTRIML)  
0x02F9  
7
6
5
4
3
F
2
F
1
F
0
F
R
W
IRCTRIM[7:0]  
Reset  
F
F
F
F
After de-assert of System Reset a factory programmed trim value is automatically loaded from the Flash memory to provide trimmed Internal  
Reference Frequency f  
.
IRC1M_TRIM  
Read: Anytime  
Write: Anytime if PROT=0 (CPMUPROT register). Else write has no effect  
NOTE  
Writes to these registers while PLLSEL=1 clears the LOCK and UPOSC status bits.  
Table 432. CPMUIRCTRIMH/L field descriptions  
Field  
Description  
IRC1M temperature coefficient Trim Bits  
15-11  
Trim bits for the Temperature Coefficient (TC) of the IRC1M frequency.  
TCTRIM  
Figure 93 shows the influence of the bits TCTRIM4:0] on the relationship between frequency and temperature.  
Figure 93 shows an approximate TC variation, relative to the nominal TC of the IRC1M (i.e. for TCTRIM[4:0]=0x00000 or 0x10000).  
IRC1M Frequency Trim Bits — Trim bits for Internal Reference Clock  
After System Reset the factory programmed trim value is automatically loaded into these registers, resulting in an Internal Reference  
Frequency f  
. See device electrical characteristics for value of f  
.
IRC1M_TRIM  
IRC1M_TRIM  
9-0  
The frequency trimming consists of two different trimming methods:  
IRCTRIM  
A rough trimming controlled by bits IRCTRIM[9:6] can be done with frequency leaps of about 6% in average.  
A fine trimming controlled by the bits IRCTRIM[5:0] can be done with frequency leaps of about 0.3% (this trimming determines the  
precision of the frequency setting of 0.15%, i.e. 0.3% is the distance between two trimming values). Figure 92 shows the relationship  
between the trim bits and the resulting IRC1M frequency.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
291/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
IRC1M frequency (IRCCLK)  
IRCTRIM[9:6]  
1.5 MHz  
IRCTRIM[5:0]  
1.0 MHz  
......  
600 kHz  
$000  
IRCTRIM[9:0]  
$3FF  
$1FF  
Figure 92. IRC1M frequency trimming diagram  
frequency  
0x11111  
...  
0x10101  
0x10100  
0x10011  
0x10010  
0x10001  
TC increases  
TC decreases  
TCTRIM[4:0] = 0x10000 or 0x00000 (nominal TC)  
0x00001  
0x00010  
0x00011  
0x00100  
0x00101  
...  
0x01111  
$1FF  
150 C  
- 40 C  
temperature  
Figure 93. Influence of TCTRIM[4:0] on the temperature coefficient  
NOTE  
The frequency is not necessarily linear with the temperature (in most cases it will not be). The above  
diagram is meant only to give the direction (positive or negative) of the variation of the TC, relative to  
the nominal TC.  
Setting TCTRIM[4:0] at 0x00000 or 0x10000 does not mean that the temperature coefficient will be  
zero. These two combinations basically switch off the TC compensation module, which result in the  
nominal TC of the IRC1M.  
Table 433. TC Trimming of the Frequency of the IRC1M  
IRC1M indicative frequency drift for  
relative TC variation  
TCTRIM[4:0]  
IRC1M indicative relative TC variation  
00000  
00001  
00010  
00011  
00100  
0 (nominal TC of the IRC)  
0%  
-0.27%  
-0.54%  
-0.81%  
-1.08%  
-0.5%  
-0.9%  
-1.3%  
-1.7%  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
292/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 433. TC Trimming of the Frequency of the IRC1M (continued)  
IRC1M indicative frequency drift for  
TCTRIM[4:0]  
IRC1M indicative relative TC variation  
relative TC variation  
00101  
00110  
00111  
01000  
01001  
01010  
01011  
01100  
01101  
01110  
01111  
10000  
10001  
10010  
10011  
10100  
10101  
10110  
10111  
11000  
11001  
11010  
11011  
11100  
11101  
11110  
11111  
-1.35%  
-1.63%  
-2.0%  
-2.2%  
-1.9%  
-2.5%  
-2.20%  
-3.0%  
-2.47%  
-3.4%  
-2.77%  
-3.9%  
-3.04  
-4.3%  
-3.33%  
-4.7%  
-3.6%  
-5.1%  
-3.91%  
-5.6%  
-4.18%  
-5.9%  
0 (nominal TC of the IRC)  
+0.27%  
+0.54%  
+0.81%  
+1.07%  
+1.34%  
+1.59%  
+1.86%  
+2.11%  
0%  
+0.5%  
+0.9%  
+1.3%  
+1.7%  
+2.0%  
+2.2%  
+2.5%  
+3.0%  
+3.4%  
+3.9%  
+4.3%  
+4.7%  
+5.1%  
+5.6%  
+5.9%  
+2.38%  
+2.62%  
+2.89%  
+3.12%  
+3.39%  
+3.62%  
+3.89%  
NOTE  
Since the IRC1M frequency is not a linear function of the temperature, but more like a parabola, the  
above relative variation is only an indication and should be considered with care.  
Be aware that the output frequency varies with the TC trimming. A frequency trimming correction is  
therefore necessary. The values provided in Table 433 are typical values at ambient temperature  
which can vary from device to device.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
293/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.16 9S12I128PIMV1 oscillator register (CPMUOSC)  
This register configures the external oscillator (OSCLCP).  
Table 434. 9S12I128PIMV1 oscillator register (CPMUOSC)  
0x02FA  
7
OSCE  
0
6
OSCBW  
0
5
4
0
3
0
2
1
0
0
0
R
W
OSCPINS_EN  
OSCFILT[4:0]  
0
Reset  
0
Read: Anytime  
Write: Anytime if PROT=0 (CPMUPROT register) and PLLSEL=1 (CPMUCLKS register), else write has no effect.  
NOTE  
Write to this register clears the LOCK and UPOSC status bits.  
NOTE  
If the chosen VCOCLK-to-OSCCLK ratio divided by two ((f  
/ f  
)/2) is not an integer number,  
VCO OSC  
the filter can not be used and the OSCFILT[4:0] bits must be set to 0.  
NOTE  
The frequency modulation (FM1 and FM0) can not be used if the Adaptive Oscillator Filter is enabled.  
Table 435. CPMUOSC field descriptions  
Field  
Description  
Oscillator Enable Bit — This bit enables the external oscillator (OSCLCP). The UPOSC status bit in the CPMUFLG register indicates  
when the oscillation is stable and OSCCLK can be selected as bus clock or source of the COP or RTI. A loss of oscillation will lead to a  
clock monitor reset.  
0
External oscillator is disabled.  
REFCLK for PLL is IRCCLK.  
7
1
External oscillator is enabled.Clock monitor is enabled.  
REFCLK for PLL is external oscillator clock divided by REFDIV.  
OSCE  
Note: When starting up the external oscillator (either by programming OSCE bit to 1 or on exit from Full Stop mode with OSCE bit already  
1) the software must wait for a minimum time equivalent to the startup time of the external oscillator t  
Pseudo Stop mode.  
before entering  
UPOSC  
Oscillator Filter Bandwidth Bit — If the VCOCLK frequency exceeds 25 MHz wide bandwidth must be selected. The Oscillator Filter  
is described in more detail in Section 4.23.4.5.2, “The adaptive oscillator filter"  
6
0
1
Oscillator filter bandwidth is narrow (window for expected OSCCLK edge is one VCOCLK cycle).  
Oscillator filter bandwidth is wide (window for expected OSCCLK edge is three VCOCLK cycles).  
OSCBW  
Oscillator Pins EXTAL and XTAL Enable Bit  
If OSCE=1 this read-only bit is set. It can only be cleared with the next reset.  
Enabling the external oscillator reserves the EXTAL and XTAL pins exclusively for oscillator application.  
5
OSCPINS_EN  
0
1
EXTAL and XTAL pins are not reserved for oscillator.  
EXTAL and XTAL pins exclusively reserved for oscillator.  
Oscillator Filter Bits — When using the oscillator a noise filter can be enabled, which filters noise from the incoming external oscillator  
clock and detects if the external oscillator clock is qualified or not (quality status shown by bit UPOSC).  
4-0  
OSCFILT  
The VCOCLK-to-OSCCLK ratio divided by two ((f  
bits to enable the Adaptive Oscillator Filter.  
/ f  
)/2) must be an integer value. This value must be written to the OSCFILT[4:0]  
VCO OSC  
0x0000 Adaptive Oscillator Filter disabled, else Adaptive Oscillator Filter enabled]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
294/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.3.2.17 9S12I128PIMV1 protection register (CPMUPROT)  
This register protects the following clock configuration registers from accidental overwrite:  
CPMUSYNR, CPMUREFDIV, CPMUCLKS, CPMUPLL, CPMUIRCTRIMH/L, and CPMUOSC  
Table 436. 9S12I128PIMV1 protection register (CPMUPROT)  
0x02FB  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
PROT  
0
R
W
Reset  
0
0
0
0
0
0
0
Read: Anytime  
Write: Anytime  
Table 437. CPMUPROT field description  
Field  
Description  
Clock Configuration Registers Protection Bit — This bit protects the clock configuration registers from accidental overwrite (see list  
of protected registers above).  
Writing 0x26 to the CPMUPROT register clears the PROT bit, other write accesses set the PROT bit.  
0
0
1
Protection of clock configuration registers is disabled.  
Protection of clock configuration registers is enabled. (see list of protected registers above)  
4.23.3.2.18 Reserved register CPMUTEST2  
NOTE  
This reserved register is designed for factory test purposes only, and is not intended for general user  
access. Writing to this register when in Special mode can alter the 9S12I128PIMV1’s functionality.  
Table 438. Reserved register CPMUTEST2  
0x02FC  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Only in Special mode  
4.23.4 Functional description  
4.23.4.1 Phase locked loop with internal filter (PLL)  
The PLL is used to generate a high speed PLLCLK based on a low frequency REFCLK. The REFCLK is by default the IRCCLK which is  
trimmed to f =1.0 MHz.  
IRC1M_TRIM  
If using the oscillator (OSCE=1) REFCLK will be based on OSCCLK. For increased flexibility, OSCCLK can be divided in a range of 1 to  
16 to generate the reference frequency REFCLK using the REFDIV[3:0] bits. Based on the SYNDIV[5:0] bits, the PLL generates the  
VCOCLK by multiplying the reference clock by a 2, 4, 6,... 126, 128. Based on the POSTDIV[4:0] bits, the VCOCLK can be divided in a  
range of 1,2, 3, 4, 5, 6,... to 32 to generate the PLLCLK.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
295/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
.
f
OSC  
------------------------------------  
=
f
f
If Oscillator is enabled (OSCE=1)  
REF  
REF  
REFDIV + 1  
If Oscillator is disabled (OSCE=0)  
= f  
IRC1M  
f
= 2 f  
 SYNDIV + 1  
VCO  
REF  
f
VCO  
----------------------------------------  
If PLL is locked (LOCK=1)  
If PLL is not locked (LOCK=0)  
If PLL is selected (PLLSEL=1)  
f
=
PLL  
POSTDIV + 1  
f
VCO  
--------------  
f
=
PLL  
4
f
PLL  
------------  
f
=
bus  
2
NOTE  
Although it is possible to set the dividers to command a very high clock frequency, do not exceed the  
specified bus frequency limit for the MCU.  
Several examples of PLL divider settings are shown in Table 439. The following rules help to achieve optimum stability and shortest lock  
time:  
Use lowest possible f  
Use highest possible REFCLK frequency f  
/ f  
ratio (SYNDIV value).  
VCO REF  
.
REF  
Table 439. Examples of PLL divider settings  
f
REFDIV[3:0]  
f
REFFRQ[1:0]  
SYNDIV[5:0]  
f
VCOFRQ[1:0]  
POSTDIV[4:0]  
f
f
bus  
osc  
REF  
VCO  
PLL  
off  
off  
$00  
$00  
$00  
$00  
1.0 MHz  
1.0 MHz  
1.0 MHz  
4.0 MHz  
00  
00  
00  
01  
$1F  
$1F  
$0F  
$03  
64 MHz  
64 MHz  
32 MHz  
32 MHz  
01  
01  
00  
01  
$03  
$00  
$00  
$00  
16 MHz  
64 MHz  
32 MHz  
32 MHz  
8.0 MHz  
32 MHz  
16 MHz  
16 MHz  
off  
4.0 MHz  
The phase detector inside the PLL compares the feedback clock (FBCLK = VCOCLK/(SYNDIV+1) with the reference clock (REFCLK =  
(IRC1M or OSCCLK)/(REFDIV+1)). Correction pulses are generated based on the phase difference between the two signals. The loop  
filter alters the DC voltage on the internal filter capacitor, based on the width and direction of the correction pulse, which leads to a higher  
or lower VCO frequency.  
The user must select the range of the REFCLK frequency (REFFRQ[1:0] bits) and the range of the VCOCLK frequency (VCOFRQ[1:0]  
bits) to ensure that the correct PLL loop bandwidth is set.  
The lock detector compares the frequencies of the FBCLK and the REFCLK. Therefore, the speed of the lock detector is directly  
proportional to the reference clock frequency. The circuit determines the lock condition based on this comparison.  
If PLL LOCK interrupt requests are enabled, the software can wait for an interrupt request and for instance check the LOCK bit. If interrupt  
requests are disabled, software can poll the LOCK bit continuously (during PLL start-up) or at periodic intervals. In either case, only when  
the LOCK bit is set, the VCOCLK will have stabilized to the programmed frequency.  
The LOCK bit is a read-only indicator of the locked state of the PLL.  
The LOCK bit is set when the VCO frequency is within the tolerance,   
, and is cleared when the VCO frequency is out of  
LOCK  
the tolerance,   
.
UNl  
Interrupt requests can occur if enabled (LOCKIE = 1) when the lock condition changes, toggling the LOCK bit.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
296/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.4.2 Startup from reset  
An example of startup of clock system from Reset is given in Figure 94.  
System  
Reset  
768 cycles  
VCORST  
f
=32 MHz  
f
=16MHz  
f
increasing  
PLL  
PLL  
f
PLL  
PLLCLK  
LOCK  
) (  
t
lock  
SYNDIV  
$1F (default target f  
$03 (default target f  
reset state  
=64MHz)  
VCO  
POSTDIV  
=f  
/4 = 16MHz)  
$01  
PLL VCO  
example change  
of POSTDIV  
CPU  
vector fetch, program execution  
Figure 94. Startup of clock system after reset  
4.23.4.3 Stop mode using PLLCLK as bus clock  
An example of what happens going into Stop mode and exiting Stop mode after an interrupt is shown in Figure 95. Disable PLL Lock  
interrupt (LOCKIE=0) before going into Stop mode.  
wake-up  
interrupt continue execution  
execution  
STOP instruction  
CPU  
t
STP_REC  
PLLCLK  
LOCK  
t
lock  
Figure 95. Stop mode using PLLCLK as bus clock  
4.23.4.4 Full stop mode using oscillator clock as bus clock  
An example of what happens going into Full Stop mode and exiting Full Stop mode after an interrupt is shown in Figure 96. Disable PLL  
Lock interrupt (LOCKIE=0) and oscillator status change interrupt (OSCIE=0) before going into Full Stop mode.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
297/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
wake-up  
interrupt continue execution  
execution  
STOP instruction  
CPU  
Core  
Clock  
t
STP_REC  
t
lock  
PLLCLK  
OSCCLK  
UPOSC  
select OSCCLK as Core/Bus Clock by writing PLLSEL to “0”  
PLLSEL  
automatically set when going into Full Stop Mode  
Figure 96. Full stop mode using oscillator clock as bus clock  
4.23.4.5 External oscillator  
4.23.4.5.1  
Enabling the external oscillator  
An example of how to use the oscillator as Bus Clock is shown in Figure 97.  
enable external oscillator by writing OSCE bit to one.  
OSCE  
crystal/resonator starts oscillating  
EXTAL  
UPOSC flag is set upon successful start of oscillation  
UPOSC  
OSCCLK  
PLLSEL  
select OSCCLK as Core/Bus Clock by writing PLLSEL to zero  
based on OSCCLK  
based on PLLCLK  
Core  
Clock  
Figure 97. Enabling the external oscillator  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
298/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.4.5.2  
The adaptive oscillator filter  
A spike in the oscillator clock can disturb the function of the modules driven by this clock. The Adaptive Oscillator Filter includes two  
features:  
1. Filter noise (spikes) from the incoming external oscillator clock. The filter feature is illustrated in Figure 98.  
enable external oscillator  
OSCE  
configure the Adaptive Oscillator Filter  
OSC  
0
> 0  
FILT  
crystal/resonator starts oscillating  
EXTAL  
LOCK  
UPOSC  
filtered  
filtered  
OSCCLK  
(filtered)  
Figure 98. Noise filtered by the adaptive oscillator filter  
2. Detect severe noise disturbance on external oscillator clock which can not be filtered and indicate the critical situation to the  
software by clearing the UPOSC and LOCK status bit and setting the OSCIF and LOCKIF flag. An example for the detection of  
critical noise is illustrated in Figure 99.  
enable external oscillator  
OSCE  
configure the Adaptive Oscillator Filter  
OSC  
0
> 0  
FILT  
crystal/resonator starts oscillating  
phase shift can not be filtered but detected  
EXTAL  
LOCK  
UPOSC  
OSCCLK  
(filtered)  
Figure 99. Critical noise detected by the adaptive oscillator filter  
NOTE  
If the LOCK bit is clear due to severe noise disturbance on the external oscillator clock, the PLLCLK  
is derived from the VCO clock (with its actual frequency) divided by four (see Section 4.23.3.2.3,  
“9S12I128PIMV1 post divider register (CPMUPOSTDIV)").  
The use of the filter function is only possible if the VCOCLK-to-OSCCLK ratio divided by two ((f  
/ f  
)/2) is an integer number. This  
VCO OSC  
integer value must be written to the OSCFILT[4:0] bits. If enabled, the Adaptive Oscillator Filter samples the incoming external oscillator  
clock signal (EXTAL) with the VCOCLK frequency.  
Using VCOCLK, a time window is defined of which an edge of the OSCCLK is expected. In case of OSCBW = 1, the width of this window  
is three VCOCLK cycles, if the OSCBW = 0 it is one VCOCLK cycle. The noise detection is active for certain combinations of OSCFILT[4:0]  
and OSCBW bit settings, as shown in Table 440.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
299/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 440. Noise detection settings  
OSCFILT[4:0]  
OSCBW  
Detection  
disabled  
disabled  
active  
Filter  
0
1
x
x
0
1
x
disabled  
active  
active  
active  
active  
2 or 3  
>=4  
disabled  
active  
NOTE  
If the VCOCLK frequency is higher than 25 MHz the wide bandwidth must be selected (OSCBW = 1).  
4.23.4.6 System clock configurations  
4.23.4.6.1 PLL engaged internal mode (PEI)  
This mode is the default mode after System Reset or Power-on Reset. The Bus Clock is based on the PLLCLK, the reference clock for  
the PLL is internally generated (IRC1M). The PLL is configured to 64 MHz VCOCLK with POSTDIV set to 0x03. If locked (LOCK=1) this  
results in a PLLCLK of 16 MHz and a Bus Clock of 8.0 MHz. The PLL can be re-configured to other bus frequencies. The clock sources  
for COP and RTI are based on the internal reference clock generator (IRC1M).  
4.23.4.6.2  
PLL engaged external mode (PEE)  
In this mode, the Bus Clock is based on the PLLCLK as well (like PEI). The reference clock for the PLL is based on the external oscillator.  
The adaptive spike filter and detection logic which uses the VCOCLK to filter and qualify the external oscillator clock can be enabled.  
The clock sources for COP and RTI can be based on the internal reference clock generator or on the external oscillator clock.  
This mode can be entered from default mode PEI by performing the following steps:  
1. Configure the PLL for desired bus frequency.  
2. Optionally the adaptive spike filter and detection logic can be enabled by calculating the integer value for the OSCFIL[4:0] bits  
and setting the bandwidth (OSCBW) accordingly.  
3. Enable the external Oscillator (OSCE bit).  
4. Wait for the PLL being locked (LOCK = 1) and the oscillator to start-up and additionally being qualified if the Adaptive Oscillator  
Filter is enabled (UPOSC =1).  
5. Clear all flags in the CPMUFLG register to be able to detect any future status bit change.  
6. Optionally status interrupts can be enabled (CPMUINT register).  
Since the Adaptive Oscillator Filter (adaptive spike filter and detection logic) uses the VCOCLK to continuously filter and qualify the  
external oscillator clock, losing PLL lock status (LOCK=0), means losing the oscillator status information as well (UPOSC=0).  
The impact of losing the oscillator status in PEE mode is as follows:  
The PLLCLK is derived from the VCO clock (with its actual frequency) divided by four until the PLL locks again.  
Application software needs to be prepared to deal with the impact of losing the oscillator status at any time.  
4.23.4.6.3  
PLL bypassed external mode (PBE)  
In this mode, the Bus Clock is based on the external oscillator clock. The reference clock for the PLL is based on the external oscillator.  
The adaptive spike filter and detection logic can be enabled which uses the VCOCLK to filter and qualify the external oscillator clock.  
The clock sources for COP and RTI can be based on the internal reference clock generator or on the external oscillator clock.  
This mode can be entered from default mode PEI by performing the following steps:  
1. Make sure the PLL configuration is valid.  
2. Optionally, the adaptive spike filter and detection logic can be enabled by calculating the integer value for the OSCFIL[4:0] bits  
and setting the bandwidth (OSCBW) accordingly.  
3. Enable the external Oscillator (OSCE bit)  
4. Wait for the PLL being locked (LOCK = 1) and the oscillator to start-up, and additionally being qualified if the Adaptive Oscillator  
Filter is enabled (UPOSC=1).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
300/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5. Clear all flags in the CPMUFLG register to be able to detect any status bit change.  
6. Optionally status interrupts can be enabled (CPMUINT register).  
7. Select the Oscillator Clock (OSCCLK) as Bus Clock (PLLSEL=0)  
Since the Adaptive Oscillator Filter (adaptive spike filter and detection logic) uses the VCOCLK to continuously filter and qualify the  
external oscillator clock, losing PLL lock status (LOCK=0) means losing the oscillator status information as well (UPOSC=0).  
The impact of losing the oscillator status in PBE mode is as follows:  
PLLSEL is set automatically and the Bus Clock is switched back to the PLLCLK.  
The PLLCLK is derived from the VCO clock (with its actual frequency) divided by four until the PLL locks again.  
Application software needs to be prepared to deal with the impact of loosing the oscillator status at any time.  
In the PBE mode, not every noise disturbance can be indicated by bits LOCK and UPOSC (both bits are based on the Bus Clock domain).  
There are clock disturbances possible, after which UPOSC and LOCK both stay asserted, while occasional pauses on the filtered  
OSCCLK and resulting Bus Clock occur. The adaptive spike filter is still functional and protects the Bus Clock from frequency overshoot  
due to spikes on the external oscillator clock. The filtered OSCCLK and resulting Bus Clock will pause until the PLL has stabilized again.  
4.23.5 Resets  
4.23.5.1 General  
All reset sources are listed in Table 441. Refer to MCU specification for related vector addresses and priorities.  
Table 441. Reset summary  
Reset source  
Power-On Reset (POR)  
Low Voltage Reset (LVR)  
External pin RESET  
Illegal Address Reset  
Clock Monitor Reset  
COP Reset  
Local enable  
None  
None  
None  
None  
OSCE Bit in CPMUOSC register  
CR[2:0] in CPMUCOP register  
4.23.5.2 Description of reset operation  
Upon detection of any reset in Table 441, an internal circuit drives the RESET pin low for 512 PLLCLK cycles. After 512 PLLCLK cycles,  
the RESET pin is released. The reset generator of the 9S12I128PIMV1 waits for additional 256 PLLCLK cycles and then samples the  
RESET pin to determine the originating source. Table 442 shows which vector will be fetched.  
Table 442. Reset vector selection  
Sampled RESET Pin (256 cycles  
after release)  
Oscillator monitor fail  
pending  
COP timeout pending  
Vector fetch  
POR  
LVR  
1
0
0
Illegal Address Reset  
External pin RESET  
1
1
1
0
X
1
Clock Monitor Reset  
COP Reset  
POR  
LVR  
0
X
X
Illegal Address Reset  
External pin RESET  
NOTE  
While System Reset is asserted, the PLLCLK runs with the frequency f  
.
VCORST  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
301/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The internal reset of the MCU remains asserted while the reset generator completes the 768 PLLCLK cycles long reset sequence. In case  
the RESET pin is externally driven low for more than these 768 PLLCLK cycles (External Reset), the internal reset remains asserted  
longer.  
RESET  
S12_CPMU drives  
RESET pin low  
S12_CPMU releases  
RESET pin  
fVCORST  
fVCORST  
)
)
)
PLLCLK  
(
(
(
512 cycles  
256 cycles  
possibly RESET  
driven low externally  
Figure 100. RESET timing  
4.23.5.2.1  
Clock monitor reset  
When the external oscillator is enabled (OSCE=1), in case of a loss of oscillation or the oscillator frequency is below the failure assert  
frequency f (see device electrical characteristics for values), the 9S12I128PIMV1 generates a clock monitor reset. In Full Stop mode  
CMFA  
the external oscillator and the clock monitor are disabled.  
4.23.5.2.2  
Computer operating properly watchdog (COP) reset  
The COP (free running watchdog timer) enables the user to check that a program is running and sequencing properly. When the COP is  
being used, software is responsible for keeping the COP from timing out. If the COP times out, it is an indication that the software is no  
longer being executed in the intended sequence, and a COP reset is generated.  
The clock source for the COP is either IRCCLK or OSCCLK, depending on the setting of the COPOSCSEL bit. In Stop mode with PSTP=1  
(Pseudo Stop mode), COPOSCSEL=1 and PCE=1 the COP continues to run, else the COP counter halts in Stop mode. Three control bits  
in the CPMUCOP register allow selection of seven COP timeout periods.  
When COP is enabled, the program must write $55 and $AA (in this order) to the CPMUARMCOP register during the selected timeout  
period. Once this is done, the COP timeout period is restarted. If the program fails to do this and the COP times out, a COP reset is  
generated. Also, if any value other than $55 or $AA is written, a COP reset is generated.  
Windowed COP operation is enabled by setting WCOP in the CPMUCOP register. In this mode, writes to the CPMUARMCOP register to  
clear the COP timer must occur in the last 25% of the selected timeout period. A premature write will immediately reset the part.  
4.23.5.3 Power-on Reset (POR)  
The on-chip POR circuitry detects when the internal supply VDD drops below an appropriate voltage level. The POR is deasserted if the  
internal supply VDD exceeds an appropriate voltage level (voltage levels are not specified in this document, because this internal supply  
is not visible on device pins).  
4.23.5.4 Low-voltage Reset (LVR)  
The on-chip LVR circuitry detects when one of the supply voltages VDD, VDDF, or VDDX, drops below an appropriate voltage level. If LVR  
is deasserted, the MCU is fully operational at the specified maximum speed. The LVR assert and deassert levels for the supply voltage  
VDDX are V  
and V  
, and are specified in the device reference manual.  
LVRXA  
LVRXD  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
302/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.6 Interrupts  
The interrupt/reset vectors requested by the 9S12I128PIMV1 are listed in Table 443. Refer to MCU specification for related vector  
addresses and priorities.  
Table 443. 9S12I128PIMV1 Interrupt Vectors  
Interrupt source  
RTI timeout interrupt  
PLL lock interrupt  
CCR mask  
I bit  
Local enable  
CPMUINT (RTIE)  
CPMUINT (LOCKIE)  
CPMUINT (OSCIE)  
CPMULVCTL (LVIE)  
I bit  
Oscillator status interrupt  
Low voltage interrupt  
I bit  
I bit  
4.23.6.1 Description of interrupt operation  
4.23.6.1.1 Real time interrupt (RTI)  
The clock source for the RTI is either IRCCLK or OSCCLK, depending on the setting of the RTIOSCSEL bit. In Stop mode with PSTP=1  
(Pseudo Stop mode), RTIOSCSEL=1 and PRE=1 the RTI continues to run, else the RTI counter halts in Stop mode.  
The RTI can be used to generate hardware interrupts at a fixed periodic rate. If enabled (by setting RTIE=1), this interrupt will occur at the  
rate selected by the CPMURTI register. At the end of the RTI timeout period, the RTIF flag is set to one and a new RTI timeout period  
starts immediately.  
A write to the CPMURTI register restarts the RTI timeout period.  
4.23.6.1.2  
PLL lock interrupt  
The 9S12I128PIMV1 generates a PLL Lock interrupt when the lock condition (LOCK status bit) of the PLL changes, either from a locked  
state to an unlocked state, or vice versa. Lock interrupts are locally disabled by setting the LOCKIE bit to zero. The PLL Lock interrupt flag  
(LOCKIF) is set to 1 when the lock condition has changed, and is cleared to 0 by writing a 1 to the LOCKIF bit.  
4.23.6.1.3  
Oscillator status interrupt  
The Adaptive Oscillator filter contains two different features:  
1. Filters spikes of the external oscillator clock.  
2. Qualify the external oscillator clock.  
When the OSCE bit is 0, then UPOSC stays 0. When OSCE=1 and OSCFILT = 0, then the filter is transparent and no spikes are filtered.  
The UPOSC bit is then set after the LOCK bit is set.  
Upon detection of a status change (UPOSC), where an unqualified oscillation becomes qualified or vice versa, the OSCIF flag is set. Going  
into Full Stop mode or disabling the oscillator can also cause a status change of UPOSC.  
Since the Adaptive Oscillator Filter is based on the PLLCLK, any change in PLL configuration or any other event which causes the PLL  
lock status to be cleared, leads to a loss of the oscillator status information as well (UPOSC=0).  
Oscillator status change interrupts are locally enabled with the OSCIE bit.  
NOTE  
Losing the oscillator status (UPOSC=0) affects the clock configuration of the system(273). This needs  
to be addressed in application software.  
Notes  
273. For details refer to “Section 4.23.4.6, “System clock configurations”  
4.23.6.1.4  
Low-voltage interrupt (LVI)  
In FPM, the input voltage VDDXR is monitored. Whenever VDDXR drops below level V  
, the status bit LVDS is set to 1. When VDDXR  
LVIA  
rises above level V  
, the status bit LVDS is cleared to 0. An interrupt, indicated by flag LVIF = 1, is triggered by any change of the status  
LVID  
bit LVDS if interrupt enable bit LVIE = 1.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
303/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.23.7 Initialization/application information  
4.23.7.1 General initialization information  
Usually applications run in MCU Normal mode. It is recommended to write the CPMUCOP register from the application program  
initialization routine after reset, regardless if the COP is used in the application, even if a configuration is loaded via the flash memory after  
reset. By doing a “controlled” write access in MCU Normal mode (with the right value for the application), the write once for the COP  
configuration bits (WCOP,CR[2:0]) takes place, which protects these bits from further accidental change. If there is a program sequencing  
issue (code runaway), the COP configuration cannot be accidentally modified.  
4.24 MCU - serial peripheral interface (S129S12I128PIMV1V5)  
4.24.1 Introduction  
The SPI module allows a duplex, synchronous, serial communication, between the MCU and peripheral devices. Software can poll the  
SPI status flags or the SPI operation can be interrupt driven.  
4.24.1.1 Glossary of terms  
Table 444. Term Definition  
SPI  
SS  
Serial Peripheral Interface  
Slave Select  
SCK  
MOSI  
MISO  
MOMI  
SISO  
Serial Clock  
Master Output, Slave Input  
Master Input, Slave Output  
Master Output, Master Input  
Slave Input, Slave Output  
4.24.1.2 Features  
The 9S12I128PIMV1 includes these distinctive features:  
Master mode and slave mode  
Selectable 8 or 16-bit transfer width  
Bidirectional mode  
Slave select output  
Mode fault error flag with CPU interrupt capability  
Double-buffered data register  
Serial clock with programmable polarity and phase  
Control of SPI operation during Wait mode  
4.24.1.3 Modes of operation  
The SPI functions in three modes: run, wait, and stop.  
Run mode  
This is the basic mode of operation.  
Wait mode  
SPI operation in Wait mode is a configurable low power mode, controlled by the SPISWAI bit located in the SPICR2 register. In  
Wait mode, if the SPISWAI bit is clear, the SPI operates like in Run mode. If the SPISWAI bit is set, the SPI goes into a power  
conservative state, with the SPI clock generation turned off. If the SPI is configured as a master, any transmission in progress  
stops, but is resumed after CPU goes into Run mode. If the SPI is configured as a slave, reception and transmission of data  
continues, so that the slave stays synchronized to the master.  
Stop mode  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
304/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The SPI is inactive in stop mode for reduced power consumption. If the SPI is configured as a master, any transmission in  
progress stops, but is resumed after CPU goes into Run mode. If the SPI is configured as a slave, reception and transmission  
of data continues, so that the slave stays synchronized to the master.  
For a detailed description of operating modes, refer to Section 4.24.4.7, “Low power mode options".  
4.24.1.4 Block diagram  
Figure 101 gives an overview on the SPI architecture. The main parts of the SPI are status, control and data registers, shifter logic, baud  
rate generator, master/slave control logic, and port control logic.  
SPI  
2
SPI Control Register 1  
BIDIROE  
2
SPI Control Register 2  
SPC0  
SPI Status Register  
SPIF  
Slave  
Control  
CPOL  
CPHA  
MOSI  
MODF SPTEF  
Phase +  
Polarity  
Control  
SCK In  
Interrupt Control  
Slave Baud Rate  
SPI  
Interrupt  
Master Baud Rate  
Phase +  
Polarity  
Control  
SCK Out  
Request  
Port  
Control  
Logic  
SCK  
SS  
Baud Rate Generator  
Counter  
Master  
Control  
Bus Clock  
Baud Rate  
Prescaler  
Clock Select  
Shift  
Clock  
Sample  
Clock  
SPPR  
3
3
SPR  
Shifter  
LSBFE=0  
LSBFE=1  
SPI Baud Rate Register  
Data In  
LSBFE=1  
MSB  
SPI Data Register  
LSB  
LSBFE=0  
Data Out  
LSBFE=0  
LSBFE=1  
Figure 101. SPI block diagram  
4.24.2 External signal description  
This section lists the name and description of all ports including inputs and outputs that do, or may, connect off chip. The 9S12I128PIMV1  
module has a total of four external pins.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
305/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.24.2.1 MOSI — master out/slave in pin  
This pin is used to transmit data out of the SPI module when it is configured as a master and receive data when it is configured as slave.  
4.24.2.2 MISO — master in/slave out pin  
This pin is used to transmit data out of the SPI module when configured as a slave and receive data when configured as master.  
4.24.2.3 SS — slave select pin  
This pin is used to output the select signal from the SPI module to another peripheral, with which a data transfer is to take place when it  
is configured as a master, and is used as an input to receive the slave select signal when the SPI is configured as a slave.  
4.24.2.4 SCK — serial clock pin  
In master mode, this is the synchronous output clock. In slave mode, this is the synchronous input clock.  
4.24.3 Memory map and register definition  
This section provides a detailed description of address space and registers used by the SPI.  
4.24.3.1 Module memory map  
The memory map for the 9S12I128PIMV1 is given in Table 445. The address listed for each register is the sum of a base address and an  
address offset. The base address is defined at the SoC level and the address offset is defined at the module level. Reads from the  
reserved bits return zeros and writes to the reserved bits have no effect.  
Table 445. SPI register summary  
Register  
Bit 7  
6
5
4
3
2
1
Bit 0  
Name  
R
W
R
0x00E8  
SPICR1  
SPIE  
0
SPE  
SPTIE  
0
MSTR  
CPOL  
CPHA  
0
SSOE  
LSBFE  
0x00E9  
SPICR2  
XFRW  
MODFEN  
BIDIROE  
0
SPISWAI  
SPC0  
W
R
0
0x00EA  
SPIBR  
SPPR2  
0
SPPR1  
SPTEF  
SPPR0  
MODF  
SPR2  
0
SPR1  
0
SPR0  
0
W
R
SPIF  
0
0x00EB  
SPISR  
W
R
R15  
T15  
R7  
R14  
T14  
R6  
R13  
T13  
R5  
R12  
T12  
R4  
R11  
T11  
R3  
R10  
T10  
R2  
R9  
T9  
R1  
T1  
R8  
T8  
R0  
T0  
0x00EC  
SPIDRH  
W
R
0x00ED  
SPIDRL  
W
R
T7  
T6  
T5  
T4  
T3  
T2  
0x00EE  
Reserved  
W
R
0x00EF  
Reserved  
W
= Unimplemented or Reserved  
4.24.3.2 Register descriptions  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
306/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
This section consists of register descriptions in address order. Each description includes a standard register diagram with an associated  
figure number. Details of register bit and field function follow the register diagrams, in bit order.  
4.24.3.2.1  
SPI control register 1 (SPICR1)  
Table 446. SPI control register 1 (SPICR1)  
0x00E8  
7
SPIE  
0
6
SPE  
0
5
SPTIE  
0
4
MSTR  
0
3
CPOL  
0
2
CPHA  
1
1
SSOE  
0
0
LSBFE  
0
R
W
Reset  
Read: Anytime  
Write: Anytime  
Table 447. SPICR1 field descriptions  
Field  
Description  
SPI Interrupt Enable Bit — This bit enables SPI interrupt requests, if SPIF or MODF status flag is set.  
7
0
1
SPI interrupts disabled.  
SPI interrupts enabled.  
SPIE  
SPI System Enable Bit — This bit enables the SPI system and dedicates the SPI port pins to SPI system functions. If SPE is cleared,  
SPI is disabled and forced into idle state, status bits in SPISR register are reset.  
6
0
1
SPI disabled (lower power consumption).  
SPI enabled, port pins are dedicated to SPI functions.  
SPE  
SPI Transmit Interrupt Enable — This bit enables SPI interrupt requests, if SPTEF flag is set.  
5
0
1
SPTEF interrupt disabled.  
SPTEF interrupt enabled.  
SPTIE  
SPI Master/Slave Mode Select Bit — This bit selects whether the SPI operates in master or slave mode. Switching the SPI from master  
to slave or vice versa forces the SPI system into idle state.  
4
0
1
SPI is in slave mode.  
SPI is in master mode.  
MSTR  
SPI Clock Polarity Bit — This bit selects an inverted or non-inverted SPI clock. To transmit data between SPI modules, the SPI modules  
must have identical CPOL values. In master mode, a change of this bit will abort a transmission in progress and force the SPI system  
into idle state.  
3
CPOL  
0
1
Active-high clocks selected. In idle state SCK is low.  
Active-low clocks selected. In idle state SCK is high.  
SPI Clock Phase Bit — This bit is used to select the SPI clock format. In master mode, a change of this bit will abort a transmission in  
progress and force the SPI system into idle state.  
2
0
1
Sampling of data occurs at odd edges (1,3,5,...) of the SCK clock.  
Sampling of data occurs at even edges (2,4,6,...) of the SCK clock.  
CPHA  
1
Slave Select Output Enable — The SS output feature is enabled only in master mode, if MODFEN is set, by asserting the SSOE as  
shown in Table 448. In master mode, a change of this bit will abort a transmission in progress and force the SPI system into idle state.  
SSOE  
LSB-First Enable — This bit does not affect the position of the MSB and LSB in the data register. Reads and writes of the data register  
always have the MSB in the highest bit position. In master mode, a change of this bit will abort a transmission in progress and force the  
SPI system into idle state.  
0
LSBFE  
0
1
Data is transferred most significant bit first.  
Data is transferred least significant bit first.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
307/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 448. SS input/output selection  
MODFEN  
SSOE  
Master mode  
SS not used by SPI  
Slave mode  
0
0
1
1
0
1
0
1
SS input  
SS input  
SS input  
SS input  
SS not used by SPI  
SS input with MODF feature  
SS is slave select output  
4.24.3.2.2  
SPI control register 2 (SPICR2)  
Table 449. SPI control register 2 (SPICR2)  
0x00E9  
7
0
6
XFRW  
0
5
0
4
MODFEN  
0
3
BIDIROE  
0
2
0
1
SPISWAI  
0
0
SPC0  
0
R
W
Reset  
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Anytime; writes to the reserved bits have no effect  
Table 450. SPICR2 field descriptions  
Field  
Description  
Transfer Width — This bit is used for selecting the data transfer width. If 8-bit transfer width is selected, SPIDRL becomes the dedicated  
data register and SPIDRH is unused. If 16-bit transfer width is selected, SPIDRH and SPIDRL form a 16-bit data register. Refer to  
Section 4.24.3.2.4, “SPI status register (SPISR)" for information about transmit/receive data handling and the interrupt flag clearing  
mechanism. In master mode, a change of this bit will abort a transmission in progress and force the SPI system into idle state.  
6
XFRW  
(274)  
0 8-bit Transfer Width (n = 8)  
(274)  
1 16-bit Transfer Width (n = 16)  
Mode Fault Enable Bit — This bit allows the MODF failure to be detected. If the SPI is in master mode and MODFEN is cleared, then  
the SS port pin is not used by the SPI. In slave mode, the SS is available only as an input regardless of the value of MODFEN. For an  
overview on the impact of the MODFEN bit on the SS port pin configuration, refer to Table 448. In master mode, a change of this bit will  
abort a transmission in progress and force the SPI system into idle state.  
4
MODFEN  
0
1
SS port pin is not used by the SPI.  
SS port pin with MODF feature.  
Output Enable in the Bidirectional Mode of Operation — This bit controls the MOSI and MISO output buffer of the SPI, when in  
bidirectional mode of operation (SPC0 is set). In master mode, this bit controls the output buffer of the MOSI port, in slave mode it  
controls the output buffer of the MISO port. In master mode, with SPC0 set, a change of this bit will abort a transmission in progress and  
force the SPI into idle state.  
3
BIDIROE  
0
1
Output buffer disabled.  
Output buffer enabled.  
SPI Stop in Wait Mode Bit — This bit is used for power conservation while in wait mode.  
1
0
1
SPI clock operates normally in wait mode.  
Stop SPI clock generation when in wait mode.  
SPISWAI  
0
Serial Pin Control Bit 0 — This bit enables bidirectional pin configurations as shown in Table 451. In master mode, a change of this bit  
will abort a transmission in progress and force the SPI system into idle state.  
SPC0  
Notes  
274. n is used later in this document as a placeholder for the selected transfer width.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
308/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 451. Bidirectional pin configurations  
Pin Mode  
SPC0  
BIDIROE  
MISO  
MOSI  
Master Mode of Operation  
Normal  
0
1
X
0
1
Master In  
Master Out  
Master In  
Bidirectional  
MISO not used by SPI  
Master I/O  
Slave Mode of Operation  
Slave Out  
Normal  
0
1
X
0
1
Slave In  
Slave In  
Bidirectional  
MOSI not used by SPI  
Slave I/O  
4.24.3.2.3  
SPI baud rate register (SPIBR)  
Table 452. SPI baud rate register (SPIBR)  
0x00EA  
7
0
6
SPPR2  
0
5
SPPR1  
0
4
3
0
2
SPR2  
0
1
SPR1  
0
0
SPR0  
0
R
W
SPPR0  
0
Reset  
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Anytime; writes to the reserved bits have no effect  
Table 453. SPIBR field descriptions  
Field  
Description  
6–4  
SPI Baud Rate Preselection Bits — These bits specify the SPI baud rates as shown in Table 454. In master mode, a change of these  
bits will abort a transmission in progress and force the SPI system into idle state.  
SPPR[2:0]  
2–0  
SPI Baud Rate Selection Bits — These bits specify the SPI baud rates as shown in Table 454. In master mode, a change of these bits  
will abort a transmission in progress and force the SPI system into idle state.  
SPR[2:0]  
The baud rate divisor equation is as follows:  
(SPR + 1)  
BaudRateDivisor = (SPPR + 1) 2  
The baud rate can be calculated with the following equation:  
Eqn. 4  
Eqn. 5  
Baud Rate = BusClock / BaudRateDivisor  
NOTE  
For maximum allowed baud rates, refer to Section 3.6.2.5, “SPI timing" of this data sheet.  
Table 454. Example SPI baud rate selection (25 MHz bus clock)  
SPPR2  
SPPR1  
SPPR0  
SPR2  
SPR1  
SPR0  
Baud rate divisor  
Baud rate  
12.5 Mbit/s  
6.25 Mbit/s  
3.125 Mbit/s  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
2
4
8
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
309/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 454. Example SPI baud rate selection (25 MHz bus clock) (continued)  
SPPR2  
SPPR1  
SPPR0  
SPR2  
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
SPR1  
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
SPR0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Baud rate divisor  
Baud rate  
1.5625 Mbit/s  
781.25 kbit/s  
390.63 kbit/s  
195.31 kbit/s  
97.66 kbit/s  
6.25 Mbit/s  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
16  
32  
64  
128  
256  
4
8
3.125 Mbit/s  
1.5625 Mbit/s  
781.25 kbit/s  
390.63 kbit/s  
195.31 kbit/s  
97.66 kbit/s  
48.83 kbit/s  
4.16667 Mbit/s  
2.08333 Mbit/s  
1.04167 Mbit/s  
520.83 kbit/s  
260.42 kbit/s  
130.21 kbit/s  
65.10 kbit/s  
32.55 kbit/s  
3.125 Mbit/s  
1.5625 Mbit/s  
781.25 kbit/s  
390.63 kbit/s  
195.31 kbit/s  
97.66 kbit/s  
48.83 kbit/s  
24.41 kbit/s  
2.5 Mbit/s  
16  
32  
64  
128  
256  
512  
6
12  
24  
48  
96  
192  
384  
768  
8
16  
32  
64  
128  
256  
512  
1024  
10  
20  
1.25 Mbit/s  
40  
625 kbit/s  
80  
312.5 kbit/s  
156.25 kbit/s  
78.13 kbit/s  
39.06 kbit/s  
19.53 kbit/s  
160  
320  
640  
1280  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
310/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 454. Example SPI baud rate selection (25 MHz bus clock) (continued)  
SPPR2  
SPPR1  
SPPR0  
SPR2  
0
SPR1  
0
SPR0  
0
Baud rate divisor  
Baud rate  
2.08333 Mbit/s  
1.04167 Mbit/s  
520.83 kbit/s  
260.42 kbit/s  
130.21 kbit/s  
65.10 kbit/s  
32.55 kbit/s  
16.28 kbit/s  
1.78571 Mbit/s  
892.86 kbit/s  
446.43 kbit/s  
223.21 kbit/s  
111.61 kbit/s  
55.80 kbit/s  
27.90 kbit/s  
13.95 kbit/s  
1.5625 Mbit/s  
781.25 kbit/s  
390.63 kbit/s  
195.31 kbit/s  
97.66 kbit/s  
48.83 kbit/s  
24.41 kbit/s  
12.21 kbit/s  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
12  
24  
0
0
1
0
1
0
48  
0
1
1
96  
1
0
0
192  
384  
768  
1536  
14  
1
0
1
1
1
0
1
1
1
0
0
0
0
0
1
28  
0
1
0
56  
0
1
1
112  
224  
448  
896  
1792  
16  
1
0
0
1
0
1
1
1
0
1
1
1
0
0
0
0
0
1
32  
0
1
0
64  
0
1
1
128  
256  
512  
1024  
2048  
1
0
0
1
0
1
1
1
0
1
1
1
4.24.3.2.4  
SPI status register (SPISR)  
Table 455. SPI status register (SPISR)  
0x00EB  
7
6
0
5
4
3
0
2
1
0
0
0
R
W
SPIF  
SPTEF  
MODF  
0
Reset  
0
0
1
0
0
0
0
0
= Unimplemented or Reserved  
Read: Anytime  
Write: Has no effect  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
311/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 456. SPISR field descriptions  
Field  
Description  
SPIF Interrupt Flag — This bit is set after received data has been transferred into the SPI data register. For information about clearing  
SPIF Flag, refer to Table 457.  
7
0
1
Transfer not yet complete.  
New data copied to SPIDR.  
SPIF  
SPI Transmit Empty Interrupt Flag — If set, this bit indicates that the transmit data register is empty. For information about clearing  
this bit and placing data into the transmit data register, refer to Table 458.  
5
0
1
SPI data register not empty.  
SPI data register empty.  
SPTEF  
Mode Fault Flag — This bit is set if the SS input becomes low while the SPI is configured as a master and mode fault detection is  
enabled, MODFEN bit of SPICR2 register is set. Refer to MODFEN bit description in Section 4.24.3.2.2, “SPI control register 2  
(SPICR2)"”. The flag is cleared automatically by a read of the SPI status register (with MODF set) followed by a write to the SPI control  
register 1.  
4
MODF  
0
1
Mode fault has not occurred.  
Mode fault has occurred.  
Table 457. SPIF interrupt flag clearing sequence  
XFRW bit  
SPIF interrupt flag clearing sequence  
0
Read SPISR with SPIF == 1  
then  
Read SPIDRL  
(275)  
Byte Read SPIDRL  
or  
(276)  
1
Read SPISR with SPIF == 1  
then  
Byte Read SPIDRH  
Byte Read SPIDRL  
or  
Word Read (SPIDRH:SPIDRL)  
Notes  
275. Data in SPIDRH is lost, in this case.  
276. SPIDRH can be read repeatedly without any effect on SPIF. SPIF Flag is cleared only by the read of SPIDRL after reading SPISR with SPIF == 1.  
Table 458. SPTEF interrupt flag clearing sequence  
XFRW bit  
SPTEF interrupt flag clearing sequence  
(277)  
0
Read SPISR with SPTEF == 1  
then  
Write to SPIDRL  
(277) (278)  
Byte Write to SPIDRL  
or  
(277) (279)  
(277)  
1
Read SPISR with SPTEF == 1  
then  
Byte Write to SPIDRH  
Byte Write to SPIDRL  
or  
Word Write to (SPIDRH:SPIDRL)  
(277)  
Notes  
277. Any write to SPIDRH or SPIDRL with SPTEF == 0 is effectively ignored.  
278. Data in SPIDRH is undefined in this case.  
279. SPIDRH can be written repeatedly without any effect on SPTEF. SPTEF Flag is cleared only by writing to SPIDRL after reading SPISR with SPTEF  
== 1.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
312/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.24.3.2.5  
SPI data register (SPIDR = SPIDRH:SPIDRL)  
Table 459. SPI data register high (SPIDRH)  
0x00EC  
7
6
5
4
3
2
1
R9  
T9  
0
0
R8  
T8  
0
R
W
R15  
T15  
0
R14  
T14  
0
R13  
T13  
0
R12  
T12  
0
R11  
T11  
0
R10  
T10  
0
Reset  
Table 460. SPI data register low (SPIDRL)  
0x00ED  
7
R7  
T7  
0
6
R6  
T6  
0
5
R5  
T5  
0
4
R4  
T4  
0
3
R3  
T3  
0
2
R2  
T2  
0
1
R1  
T1  
0
0
R0  
T0  
0
R
W
Reset  
Read: Anytime; read data only valid when SPIF is set   
Write: Anytime  
The SPI data register is both the input and output register for SPI data. A write to this register allows data to be queued and  
transmitted. For an SPI configured as a master, queued data is transmitted immediately after the previous transmission has  
completed. The SPI transmitter empty flag SPTEF in the SPISR register indicates when the SPI data register is ready to accept  
new data. Received data in the SPIDR is valid when SPIF is set.  
If SPIF is cleared and data has been received, the received data is transferred from the receive shift register to the SPIDR and  
SPIF is set.  
If SPIF is set and not serviced, and a second data value has been received, the second received data is kept as valid data in the  
receive shift register until the start of another transmission. The data in the SPIDR does not change.  
If SPIF is set and valid data is in the receive shift register, and SPIF is serviced before the start of a third transmission, the data  
in the receive shift register is transferred into the SPIDR and SPIF remains set (see Figure 102).  
If SPIF is set and valid data is in the receive shift register, and SPIF is serviced after the start of a third transmission, the data in  
the receive shift register has become invalid and is not transferred into the SPIDR (see Figure 103).  
Data A Received  
Data B Received  
Data C Received  
SPIF Serviced  
Receive Shift Register  
SPIF  
Data B  
Data A  
Data C  
Data C  
SPI Data Register  
Data B  
Data A  
= Unspecified  
= Reception in progress  
Figure 102. Reception with SPIF serviced in time  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
313/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Data A Received  
Data B Received  
Data C Received  
Data B Lost  
SPIF Serviced  
Receive Shift Register  
SPIF  
Data B  
Data C  
Data C  
Data A  
SPI Data Register  
Data A  
= Unspecified  
= Reception in progress  
Figure 103. Reception with SPIF serviced too late  
4.24.4 Functional description  
The SPI module allows a duplex, synchronous, serial communication between the MCU and peripheral devices. Software can poll the SPI  
status flags or SPI operation can be interrupt driven.  
The SPI system is enabled by setting the SPI enable (SPE) bit in SPI control register 1. While SPE is set, the four associated SPI port  
pins are dedicated to the SPI function as:  
Slave select (SS)  
Serial clock (SCK)  
Master out/slave in (MOSI)  
Master in/slave out (MISO)  
The main element of the SPI system is the SPI data register. The n-bit(280) data register in the master and the n-bit(280) data register in the  
slave are linked by the MOSI and MISO pins to form a distributed 2n-bit(280) register. When a data transfer operation is performed, this  
2n-bit(280) register is serially shifted n(280) bit positions by the S-clock from the master, so data is exchanged between the master and the  
slave. Data written to the master SPI data register becomes the output data for the slave, and data read from the master SPI data register  
after a transfer operation is the input data from the slave.  
Notes  
280. n depends on the selected transfer width, refer to Section 4.24.3.2.2, “SPI control register 2 (SPICR2)"  
A read of SPISR with SPTEF = 1 followed by a write to SPIDR, puts data into the transmit data register. When a transfer is complete and  
SPIF is cleared, received data is moved into the receive data register. This data register acts as the SPI receive data register for reads  
and as the SPI transmit data register for writes. A common SPI data register address is shared for reading data from the read data buffer  
and for writing data to the transmit data register.  
The clock phase control bit (CPHA) and a clock polarity control bit (CPOL) in the SPI control register 1 (SPICR1) select one of four possible  
clock formats to be used by the SPI system. The CPOL bit simply selects a non-inverted or inverted clock. The CPHA bit is used to  
accommodate two fundamentally different protocols by sampling data on odd numbered SCK edges or on even numbered SCK edges  
(see Section 4.24.4.3, “Transmission formats").  
The SPI can be configured to operate as a master or as a slave. When the MSTR bit in SPI control register1 is set, master mode is  
selected, when the MSTR bit is clear, slave mode is selected.  
NOTE  
A change of CPOL or MSTR bit while there is a received byte pending in the receive shift register will  
destroy the received byte and must be avoided.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
314/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.24.4.1 Master mode  
The SPI operates in master mode when the MSTR bit is set. Only a master SPI module can initiate transmissions. A transmission begins  
by writing to the master SPI data register. If the shift register is empty, data immediately transfers to the shift register. Data begins shifting  
out on the MOSI pin under the control of the serial clock.  
Serial clock  
The SPR2, SPR1, and SPR0 baud rate selection bits, in conjunction with the SPPR2, SPPR1, and SPPR0 baud rate preselection  
bits in the SPI baud rate register, control the baud rate generator and determine the speed of the transmission. The SCK pin is  
the SPI clock output. Through the SCK pin, the baud rate generator of the master controls the shift register of the slave peripheral.  
MOSI, MISO pin  
In master mode, the function of the serial data output pin (MOSI) and the serial data input pin (MISO) is determined by the SPC0  
and BIDIROE control bits.  
SS pin  
If MODFEN and SSOE are set, the SS pin is configured as slave select output. The SS output becomes low during each  
transmission and is high when the SPI is in idle state.  
If MODFEN is set and SSOE is cleared, the SS pin is configured as input for detecting mode fault error. If the SS input becomes  
low, this indicates a mode fault error where another master tries to drive the MOSI and SCK lines. In this case, the SPI  
immediately switches to slave mode, by clearing the MSTR bit and also disables the slave output buffer MISO (or SISO in  
bidirectional mode). The result is that all outputs are disabled and SCK, MOSI, and MISO are inputs. If a transmission is in  
progress when the mode fault occurs, the transmission is aborted and the SPI is forced into idle state.  
This mode fault error also sets the mode fault (MODF) flag in the SPI status register (SPISR). If the SPI interrupt enable bit (SPIE)  
is set when the MODF flag becomes set, then an SPI interrupt sequence is also requested.  
When a write to the SPI data register in the master occurs, there is a half SCK-cycle delay. After the delay, SCK is started within  
the master. The rest of the transfer operation differs slightly, depending on the clock format specified by the SPI clock phase bit,  
CPHA, in SPI control register 1 (see Section 4.24.4.3, “Transmission formats").  
NOTE  
A change of the bits CPOL, CPHA, SSOE, LSBFE, XFRW, MODFEN, SPC0, or BIDIROE with SPC0  
set, SPPR2-SPPR0, and SPR2-SPR0 in master mode, will abort a transmission in progress and force  
the SPI into idle state. The remote slave cannot detect this, therefore the master must ensure that  
the remote slave is returned to idle state.  
4.24.4.2 Slave mode  
The SPI operates in slave mode when the MSTR bit in SPI control register 1 is clear.  
Serial clock  
In slave mode, SCK is the SPI clock input from the master.  
MISO, MOSI pins  
In slave mode, the function of the serial data output pin (MISO) and serial data input pin (MOSI) is determined by the SPC0 bit  
and BIDIROE bit in SPI control register 2.  
SS pin  
The SS pin is the slave select input. Before a data transmission occurs, the SS pin of the slave SPI must be low. SS must remain  
low until the transmission is complete. If SS goes high, the SPI is forced into idle state.  
The SS input also controls the serial data output pin. If SS is high (not selected), the serial data output pin is high impedance,  
and, if SS is low, the first bit in the SPI data register is driven out of the serial data output pin. Also, if the slave is not selected  
(SS is high), then the SCK input is ignored and no internal shifting of the SPI shift register occurs.  
Although the SPI is capable of duplex operation, some SPI peripherals are capable of only receiving SPI data in a slave mode.  
For these simpler devices, there is no serial data out pin.  
NOTE  
When peripherals with duplex capability are used, take care not to simultaneously enable two  
receivers whose serial outputs drive the same system slave’s serial data output line.  
As long as no more than one slave device drives the system slave’s serial data output line, it is possible for several slaves to receive the  
same transmission from a master, although the master would not receive return information from all of the receiving slaves.  
If the CPHA bit in SPI control register 1 is clear, odd numbered edges on the SCK input cause the data at the serial data input pin to be  
latched. Even numbered edges cause the value previously latched from the serial data input pin to shift into the LSB or MSB of the SPI  
shift register, depending on the LSBFE bit.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
315/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
If the CPHA bit is set, even numbered edges on the SCK input cause the data at the serial data input pin to be latched. Odd numbered  
edges cause the value previously latched from the serial data input pin to shift into the LSB or MSB of the SPI shift register, depending on  
the LSBFE bit.  
When CPHA is set, the first edge is used to get the first data bit onto the serial data output pin. When CPHA is clear and the SS input is  
low (slave selected), the first bit of the SPI data is driven out of the serial data output pin. After the nth(281) shift, the transfer is considered  
complete and the received data is transferred into the SPI data register. To indicate transfer is complete, the SPIF flag in the SPI status  
register is set.  
Notes  
281. n depends on the selected transfer width, refer to Section 4.24.3.2.2, “SPI control register 2 (SPICR2)"  
NOTE  
A change of the bits CPOL, CPHA, SSOE, LSBFE, MODFEN, SPC0, or BIDIROE with SPC0 set in  
slave mode, will corrupt a transmission in progress and must be avoided.  
4.24.4.3 Transmission formats  
During an SPI transmission, data is transmitted (shifted out serially) and received (shifted in serially) simultaneously. The serial clock  
(SCK) synchronizes shifting and sampling of the information on the two serial data lines. Aslave select line allows selection of an individual  
slave SPI device; slave devices that are not selected do not interfere with SPI bus activities. Optionally, on a master SPI device, the slave  
select line can be used to indicate multiple-master bus contention.  
MASTER SPI  
SLAVE SPI  
MISO  
MOSI  
MISO  
MOSI  
SHIFT REGISTER  
SHIFT REGISTER  
SCK  
SS  
SCK  
SS  
BAUD RATE  
GENERATOR  
V
DD  
Figure 104. Master/slave transfer block diagram  
4.24.4.3.1  
Clock phase and polarity controls  
Using two bits in the SPI control register 1, software selects one of four combinations of serial clock phase and polarity. The CPOL clock  
polarity control bit specifies an active high or low clock and has no significant effect on the transmission format. The CPHA clock phase  
control bit selects one of two fundamentally different transmission formats.  
Clock phase and polarity should be identical for the master SPI device and the communicating slave device. In some cases, the phase  
and polarity are changed between transmissions to allow a master device to communicate with peripheral slaves having different  
requirements.  
4.24.4.3.2  
CPHA = 0 transfer format  
The first edge on the SCK line is used to clock the first data bit of the slave into the master and the first data bit of the master into the  
slave. In some peripherals, the first bit of the slave’s data is available at the slave’s data out pin as soon as the slave is selected. In this  
format, the first SCK edge is issued a half cycle after SS has become low.  
A half SCK cycle later, the second edge appears on the SCK line. When this second edge occurs, the value previously latched from the  
serial data input pin is shifted into the LSB or MSB of the shift register, depending on LSBFE bit.  
After this second edge, the next bit of the SPI master data is transmitted out of the serial data output pin of the master to the serial input  
pin on the slave. This process continues for a total of 16 edges on the SCK line, with data being latched on odd numbered edges and  
shifted on even numbered edges.  
Data reception is double buffered. Data is shifted serially into the SPI shift register during the transfer and is transferred to the parallel SPI  
data register after the last bit is shifted in.  
After 2n(282) (last) SCK edges:  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
316/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Data that was previously in the master SPI data register should now be in the slave data register and the data that was in the  
slave data register should be in the master.  
The SPIF flag in the SPI status register is set, indicating that the transfer is complete.  
Notes  
282. n depends on the selected transfer width, refer to Section 4.24.3.2.2, “SPI control register 2 (SPICR2)"  
Figure 105 is a timing diagram of an SPI transfer where CPHA = 0. SCK waveforms are shown for CPOL = 0 and CPOL = 1. The diagram  
may be interpreted as a master or slave timing diagram because the SCK, MISO, and MOSI pins are connected directly between the  
master and the slave. The MISO signal is the output from the slave and the MOSI signal is the output from the master. The SS pin of the  
master must be either high or reconfigured as a general purpose output not affecting the SPI.  
End of Idle State  
Begin of Idle State  
Begin  
3
End  
Transfer  
1
2
4
5
6
7
8
9
10 11 12 13 14 15 16  
SCK Edge Number  
SCK (CPOL = 0)  
SCK (CPOL = 1)  
SAMPLE I  
MOSI/MISO  
CHANGE O  
MOSI pin  
CHANGE O  
MISO pin  
SEL SS (O)  
Master only  
SEL SS (I)  
tL  
t
t
t
L
T
I
MSB first (LSBFE = 0): MSB  
LSB first (LSBFE = 1): LSB  
Bit 6  
Bit 1  
Bit 5  
Bit 2  
Bit 4  
Bit 3  
Bit 3  
Bit 4  
Bit 2  
Bit 5  
Bit 1  
Bit 6  
LSB Minimum 1/2 SCK  
for t , t , t  
MSB  
T
l
L
t = Minimum leading time before the first SCK edge  
L
t = Minimum trailing time after the last SCK edge  
T
t = Minimum idling time between transfers (minimum SS high time)  
I
t , t , and t are guaranteed for the master mode and required for the slave mode.  
L
T
I
Figure 105. SPI Clock format 0 (CPHA = 0), with 8-bit transfer width selected (XFRW = 0)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
317/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
End of Idle State  
Begin of Idle State  
Begin  
End  
Transfer  
1
3
5
7
9
11 13 15 17 19 21 23 25 27 29 31  
SCK Edge Number  
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
SCK (CPOL = 0)  
SCK (CPOL = 1)  
SAMPLE I  
MOSI/MISO  
CHANGE O  
MOSI pin  
CHANGE O  
MISO pin  
SEL SS (O)  
Master only  
SEL SS (I)  
tL  
MSB Bit 14Bit 13Bit 12Bit 11Bit 10 Bit 9 Bit 8 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 LSB  
LSB Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7 Bit 8 Bit 9 Bit 10Bit 11Bit 12Bit 13Bit 14 MSB for t , t , t  
L
t
t t  
I L  
T
MSB first (LSBFE = 0)  
LSB first (LSBFE = 1)  
Minimum 1/2 SCK  
T
l
t = Minimum leading time before the first SCK edge  
L
t = Minimum trailing time after the last SCK edge  
T
t = Minimum idling time between transfers (minimum SS high time)  
I
t , t , and t are guaranteed for the master mode and required for the slave mode.  
L
T
I
Figure 106. SPI clock format 0 (CPHA = 0), with 16-Bit transfer width selected (XFRW = 1)  
In slave mode, if the SS line is not deasserted between the successive transmissions, then the content of the SPI data register is not  
transmitted; instead the last received data is transmitted. If the SS line is deasserted for at least minimum idle time (half SCK cycle)  
between successive transmissions, then the content of the SPI data register is transmitted.  
In master mode, with slave select output enabled, the SS line is always deasserted and reasserted between successive transfers for at  
least minimum idle time.  
4.24.4.3.3  
CPHA = 1 transfer format  
Some peripherals require the first SCK edge before the first data bit becomes available at the data out pin, the second edge clocks data  
into the system. In this format, the first SCK edge is issued by setting the CPHA bit at the beginning of the n(283)-cycle transfer operation.  
Notes  
283. n depends on the selected transfer width, refer to Section 4.24.3.2.2, “SPI control register 2 (SPICR2)"  
The first edge of SCK occurs immediately after the half SCK clock cycle synchronization delay. This first edge commands the slave to  
transfer its first data bit to the serial data input pin of the master.  
A half SCK cycle later, the second edge appears on the SCK pin. This is the latching edge for both the master and slave.  
When the third edge occurs, the value previously latched from the serial data input pin is shifted into the LSB or MSB of the SPI shift  
register, depending on LSBFE bit. After this edge, the next bit of the master data is coupled out of the serial data output pin of the master  
to the serial input pin on the slave.  
4
This process continues for a total of n edges on the SCK line with data being latched on even numbered edges and shifting taking place  
on odd numbered edges.  
Data reception is double buffered, data is serially shifted into the SPI shift register during the transfer and is transferred to the parallel SPI  
data register after the last bit is shifted in.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
318/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4
After 2n SCK edges:  
Data that was previously in the SPI data register of the master is now in the data register of the slave, and data that was in the  
data register of the slave is in the master.  
The SPIF flag bit in SPISR is set indicating that the transfer is complete.  
Figure 107 shows two clocking variations for CPHA = 1. The diagram may be interpreted as a master or slave timing diagram, because  
the SCK, MISO, and MOSI pins are connected directly between the master and the slave. The MISO signal is the output from the slave,  
and the MOSI signal is the output from the master. The SS line is the slave select input to the slave. The SS pin of the master must be  
either high or reconfigured as a general purpose output not affecting the SPI.  
End of Idle State  
SCK Edge Number  
SCK (CPOL = 0)  
Begin  
4
End  
Begin of Idle State  
Transfer  
1
2
3
5
6
7
8
9
10 11 12 13 14 15 16  
SCK (CPOL = 1)  
SAMPLE I  
MOSI/MISO  
CHANGE O  
MOSI pin  
CHANGE O  
MISO pin  
SEL SS (O)  
Master only  
SEL SS (I)  
tL  
t
t
t
L
T
I
MSB first (LSBFE = 0): MSB  
LSB first (LSBFE = 1): LSB  
Bit 6  
Bit 1  
Bit 5  
Bit 2  
Bit 4  
Bit 3  
Bit 3  
Bit 4  
Bit 2  
Bit 5  
Bit 1  
Bit 6  
LSB Minimum 1/2 SCK  
for t , t , t  
MSB  
T
l
L
t = Minimum leading time before the first SCK edge, not required for back-to-back transfers  
L
t = Minimum trailing time after the last SCK edge  
T
t = Minimum idling time between transfers (minimum SS high time), not required for back-to-back transfers  
I
Figure 107. SPI clock format 1 (CPHA = 1), with 8-Bit transfer width selected (XFRW = 0)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
319/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
End of Idle State  
Begin of Idle State  
Begin  
End  
Transfer  
1
3
5
7
9
11 13 15 17 19 21 23 25 27 29 31  
SCK Edge Number  
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
SCK (CPOL = 0)  
SCK (CPOL = 1)  
SAMPLE I  
MOSI/MISO  
CHANGE O  
MOSI pin  
CHANGE O  
MISO pin  
SEL SS (O)  
Master only  
SEL SS (I)  
t
t t  
I L  
tL  
T
Minimum 1/2 SCK  
for t , t , t  
MSB Bit 14Bit 13Bit 12Bit 11Bit 10 Bit 9 Bit 8 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 LSB  
LSB Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7 Bit 8 Bit 9 Bit 10Bit 11Bit 12Bit 13Bit 14 MSB  
MSB first (LSBFE = 0)  
LSB first (LSBFE = 1)  
T
l
L
t = Minimum leading time before the first SCK edge, not required for back-to-back transfers  
L
t = Minimum trailing time after the last SCK edge  
T
t = Minimum idling time between transfers (minimum SS high time), not required for back-to-back transfers  
I
Figure 108. SPI clock format 1 (CPHA = 1), with 16-Bit transfer width selected (XFRW = 1)  
The SS line can remain active low between successive transfers (can be tied low at all times). This format is sometimes preferred in  
systems having a single fixed master and a single slave that drive the MISO data line.  
Back-to-back transfers in master mode  
In master mode, if a transmission has completed and new data is available in the SPI data register, this data is sent out  
immediately without a trailing and minimum idle time.  
The SPI interrupt request flag (SPIF) is common to both the master and slave modes. SPIF gets set one half SCK cycle after the last SCK  
edge.  
4.24.4.4 SPI baud rate generation  
Baud rate generation consists of a series of divider stages. Six bits in the SPI baud rate register (SPPR2, SPPR1, SPPR0, SPR2, SPR1,  
and SPR0) determine the divisor to the SPI module clock which results in the SPI baud rate.  
The SPI clock rate is determined by the product of the value in the baud rate preselection bits (SPPR2–SPPR0) and the value in the baud  
rate selection bits (SPR2–SPR0). The module clock divisor equation is shown in Equation 6.  
(SPR + 1)  
BaudRateDivisor = (SPPR + 1) 2  
Eqn. 6  
When all bits are clear (the default condition), the SPI module clock is divided by 2. When the selection bits (SPR2–SPR0) are 001 and  
the preselection bits (SPPR2–SPPR0) are 000, the module clock divisor becomes 4. When the selection bits are 010, the module clock  
divisor becomes 8, etc.  
When the preselection bits are 001, the divisor determined by the selection bits is multiplied by 2. When the preselection bits are 010, the  
divisor is multiplied by 3, etc. See Table 454 for baud rate calculations for all bit conditions, based on a 25 MHz bus clock. The two sets  
of selects allows the clock to be divided by a non-power of two to achieve other baud rates such as divide by 6, divide by 10, etc.  
The baud rate generator is activated only when the SPI is in master mode and a serial transfer is taking place. In the other cases, the  
divider is disabled to decrease I current.  
DD  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
320/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
For maximum allowed baud rates, refer to Section 3.6.2.5, “SPI timing" of this data sheet.  
4.24.4.5 Special features  
4.24.4.5.1 SS output  
The SS output feature automatically drives the SS pin low during transmission, to select external devices and drives it high during idle to  
deselect external devices. When SS output is selected, the SS output pin is connected to the SS input pin of the external device.  
The SS output is available only in master mode during normal SPI operation by asserting SSOE and MODFEN bit as shown in Table 448.  
The mode fault feature is disabled while SS output is enabled.  
NOTE  
Care must be taken when using the SS output feature in a multimaster system because the mode  
fault feature is not available for detecting system errors between masters.  
4.24.4.5.2  
Bidirectional mode (MOMI or SISO)  
The bidirectional mode is selected when the SPC0 bit is set in SPI control register 2 (see Table 461). In this mode, the SPI uses only one  
serial data pin for the interface with external device(s). The MSTR bit decides which pin to use. The MOSI pin becomes the serial data I/O  
(MOMI) pin for the master mode, and the MISO pin becomes serial data I/O (SISO) pin for the slave mode. The MISO pin in master mode  
and MOSI pin in slave mode are not used by the SPI.  
Table 461. Normal mode and bidirectional mode  
When SPE = 1  
Master mode MSTR = 1  
Slave mode MSTR = 0  
MOSI  
MISO  
Serial Out  
Serial In  
MOSI  
MISO  
Normal mode  
SPC0 = 0  
SPI  
SPI  
Serial Out  
Serial In  
Serial In  
Serial Out  
MOMI  
Bidirectional mode  
SPC0 = 1  
BIDIROE  
SPI  
SPI  
BIDIROE  
Serial In  
Serial Out  
SISO  
The direction of each serial I/O pin depends on the BIDIROE bit. If the pin is configured as an output, serial data from the shift register is  
driven out on the pin. The same pin is also the serial input to the shift register.  
The SCK is output for the master mode and input for the slave mode.  
The SS is the input or output for the master mode, and it is always the input for the slave mode.  
The bidirectional mode does not affect SCK and SS functions.  
NOTE  
In bidirectional master mode, with mode fault enabled, both data pins MISO and MOSI can be  
occupied by the SPI, though MOSI is normally used for transmissions in bidirectional mode and MISO  
is not used by the SPI. If a mode fault occurs, the SPI is automatically switched to slave mode. In this  
case, MISO becomes occupied by the SPI and MOSI is not used. This must be considered, if the  
MISO pin is used for another purpose.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
321/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.24.4.6 Error conditions  
The SPI has one error condition: Mode fault error  
4.24.4.6.1  
Mode fault error  
If the SS input becomes low while the SPI is configured as a master, it indicates a system error where more than one master may be trying  
to drive the MOSI and SCK lines simultaneously. This condition is not permitted in normal operation, the MODF bit in the SPI status register  
is set automatically, provided the MODFEN bit is set.  
In the special case where the SPI is in master mode and MODFEN bit is cleared, the SS pin is not used by the SPI. In this special case,  
the mode fault error function is inhibited and MODF remains cleared. In case the SPI system is configured as a slave, the SS pin is a  
dedicated input pin. Mode fault error doesn’t occur in slave mode.  
If a mode fault error occurs, the SPI is switched to slave mode, with the exception that the slave output buffer is disabled. So SCK, MISO,  
and MOSI pins are forced to be high-impedance inputs to avoid any possibility of conflict with another output driver. A transmission in  
progress is aborted and the SPI is forced into idle state.  
If the mode fault error occurs in the bidirectional mode for a SPI system configured in master mode, output enable of the MOMI (MOSI in  
bidirectional mode) is cleared if it was set. No mode fault error occurs in the bidirectional mode for SPI system configured in slave mode.  
The mode fault flag is cleared automatically by a read of the SPI status register (with MODF set) followed by a write to SPI control register  
1. If the mode fault flag is cleared, the SPI becomes a normal master or slave again.  
NOTE  
If a mode fault error occurs and a received data byte is pending in the receive shift register, this data  
byte will be lost.  
4.24.4.7 Low power mode options  
4.24.4.7.1  
SPI in run mode  
In run mode with the SPI system enable (SPE) bit in the SPI control register clear, the SPI system is in a low-power, disabled state. SPI  
registers remain accessible, but clocks to the core of this module are disabled.  
4.24.4.7.2  
SPI in wait mode  
SPI operation in wait mode depends upon the state of the SPISWAI bit in SPI control register 2.  
If SPISWAI is clear, the SPI operates normally when the CPU is in wait mode  
If SPISWAI is set, SPI clock generation ceases and the SPI module enters a power conservation state when the CPU is in wait  
mode.  
If SPISWAI is set and the SPI is configured for master, any transmission and reception in progress stops at wait mode entry.  
The transmission and reception resumes when the SPI exits wait mode.  
If SPISWAI is set and the SPI is configured as a slave, any transmission and reception in progress continues if the SCK  
continues to be driven from the master. This keeps the slave synchronized to the master and the SCK.  
If the master transmits several bytes while the slave is in wait mode, the slave will continue to send out bytes consistent with  
the operation mode at the start of wait mode (i.e., if the slave is currently sending its SPIDR to the master, it will continue to  
send the same byte. Else if the slave is currently sending the last received byte from the master, it will continue to send each  
previous master byte).  
NOTE  
Care must be taken when expecting data from a master while the slave is in wait or stop mode. Even  
though the shift register will continue to operate, the rest of the SPI is shut down (i.e., a SPIF interrupt  
will not be generated until exiting stop or wait mode). Also, the byte from the shift register will not be  
copied into the SPIDR register until after the slave SPI has exited wait or stop mode. In slave mode,  
a received byte pending in the receive shift register will be lost when entering wait or stop mode. An  
SPIF flag and SPIDR copy is generated only if wait mode is entered or exited during a transmission.  
If the slave enters wait mode in idle mode and exits wait mode in idle mode, neither a SPIF nor a  
SPIDR copy will occur.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
322/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.24.4.7.3  
SPI in stop mode  
Stop mode is dependent on the system. The SPI enters stop mode when the module clock is disabled (held high or low). If the SPI is in  
master mode and exchanging data when the CPU enters stop mode, the transmission is frozen until the CPU exits stop mode. After stop,  
data to and from the external SPI is exchanged correctly. In slave mode, the SPI will stay synchronized with the master.  
The stop mode is not dependent on the SPISWAI bit.  
4.24.4.7.4  
Reset  
The reset values of registers and signals are described in Section 4.18.3, “Memory map and register definition", which details the registers  
and their bit fields.  
If a data transmission occurs in slave mode after reset without a write to SPIDR, it will transmit garbage, or the data last received  
from the master before the reset.  
Reading from the SPIDR after reset will always read zeros.  
4.24.4.7.5  
Interrupts  
The 9S12I128PIMV1 only originates interrupt requests when the SPI is enabled (SPE bit in SPICR1 set). The following is a description of  
how the 9S12I128PIMV1 makes a request and how the MCU should acknowledge that request. The interrupt vector offset and interrupt  
priority are chip dependent.  
The interrupt flags MODF, SPIF, and SPTEF are logically ORed to generate an interrupt request.  
4.24.4.7.5.1 MODF  
MODF occurs when the master detects an error on the SS pin. The master SPI must be configured for the MODF feature (see Table 448).  
After MODF is set, the current transfer is aborted and the following bit is changed: MSTR = 0, The master bit in SPICR1 resets.  
The MODF interrupt is reflected in the status register MODF flag. Clearing the flag will also clear the interrupt. This interrupt will stay active  
while the MODF flag is set. MODF has an automatic clearing process which is described in Section 4.24.3.2.4, “SPI status register  
(SPISR)".  
4.24.4.7.5.2 SPIF  
SPIF occurs when new data has been received and copied to the SPI data register. After SPIF is set, it does not clear until it is serviced.  
SPIF has an automatic clearing process, which is described in Section 4.24.3.2.4, “SPI status register (SPISR)".  
4.24.4.7.5.3 SPTEF  
SPTEF occurs when the SPI data register is ready to accept new data. After SPTEF is set, it does not clear until it is serviced. SPTEF has  
an automatic clearing process, which is described in Section 4.24.3.2.4, “SPI status register (SPISR)".  
4.25 128 kByte flash module (S12FTMRC128K1V1)  
4.25.1 Introduction  
The FTMRC128K1 module implements the following:  
128 kbytes of P-Flash (Program Flash) memory  
4.0 kbytes of D-Flash (Data Flash) memory  
The Flash memory is ideal for single-supply applications allowing for field reprogramming without requiring external high voltage sources  
for program or erase operations. The Flash module includes a memory controller that executes commands to modify Flash memory  
contents. The user interface to the memory controller consists of the indexed Flash Common Command Object (FCCOB) register which  
is written to with the command, global address, data, and any required command parameters. The memory controller must complete the  
execution of a command before the FCCOB register can be written to with a new command.  
CAUTION  
A Flash word or phrase must be in the erased state before being programmed. Cumulative  
programming of bits within a Flash word or phrase is not allowed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
323/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The Flash memory may be read as bytes, aligned words, or misaligned words. Read access time is one bus cycle for bytes and aligned  
words, and two bus cycles for misaligned words. For Flash memory, an erased bit reads 1 and a programmed bit reads 0.  
It is possible to read from P-Flash memory while some commands are executing on D-Flash memory. It is not possible to read from  
D-Flash memory while a command is executing on P-Flash memory. Simultaneous P-Flash and D-Flash operations are discussed in  
Section 4.25.4.4, “Allowed simultaneous P-flash and D-flash operations".  
Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve single bit faults and detect  
double bit faults. For P-Flash memory, the ECC implementation requires that programming be done on an aligned 8-byte basis (a Flash  
phrase). Since P-Flash memory is always read by half-phrase, only one single bit fault in an aligned 4-byte half-phrase containing the byte  
or word accessed will be corrected.  
4.25.1.1 Glossary  
Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including program and erase) on the Flash  
memory.  
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store for data.  
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased. The D-Flash sector consists of  
four 64-byte rows for a total of 256-bytes.  
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters required for Flash command  
execution.  
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two sets of aligned double words with  
each set, including 7 ECC bits for single bit fault correction and double bit fault detection within each double word.  
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.  
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased. Each P-Flash sector contains  
512-bytes.  
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device ID, Version ID, and the Program  
Once field.  
4.25.1.2 Features  
4.25.1.2.1  
P-flash features  
128 kbytes of P-Flash memory composed of one 128 kbyte Flash block divided into 256 sectors of 512-bytes  
Single bit fault correction and double bit fault detection within a 32-bit double word during read operations  
Automated program and erase algorithm with verify and generation of ECC parity bits  
Fast sector erase and phrase program operation  
Ability to read the P-Flash memory while programming a word in the D-Flash memory  
Flexible protection scheme to prevent accidental program or erase of P-Flash memory  
4.25.1.2.2  
D-flash features  
4.0 kbytes of D-Flash memory composed of one 4.0 kbyte Flash block divided into 16 sectors of 256-bytes  
Single bit fault correction and double bit fault detection within a word during read operations  
Automated program and erase algorithm with verify and generation of ECC parity bits  
Fast sector erase and word program operation  
Protection scheme to prevent accidental program or erase of D-Flash memory  
Ability to program up to four words in a burst sequence  
4.25.1.2.3  
Other flash module features  
No external high-voltage power supply required for Flash memory program and erase operations  
Interrupt generation on Flash command completion and Flash error detection  
Security mechanism to prevent unauthorized access to the Flash memory  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
324/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.1.3 Block diagram  
The block diagram of the Flash module is shown in Figure 109.  
Command  
Interrupt  
Request  
Flash  
Interface  
Registers  
Protection  
Security  
16-bit  
Error  
internal  
bus  
Interrupt  
P-Flash  
32Kx39  
sector 0  
sector 1  
Request  
Bus  
Clock  
sector 255  
Clock  
Divider  
FCLK  
Memory  
Controller  
D-Flash  
2Kx22  
CPU  
sector 0  
sector 1  
Scratch RAM  
384x16  
sector 15  
Figure 109. FTMRC128K1 block diagram  
4.25.2 External signal description  
The Flash module contains no signals that connect off-chip.  
4.25.3 Memory map and registers  
This section describes the memory map and registers for the Flash module. Read data from unimplemented memory space in the Flash  
module is undefined. Write access to unimplemented or reserved memory space in the Flash module will be ignored by the Flash module.  
4.25.3.1 Module memory map  
The S12 architecture places the P-Flash memory between global addresses 0x2_0000 and 0x3_FFFF, as shown in Table 462.The  
P-Flash memory map is shown in Figure 110.  
Table 462. P-flash memory addressing  
Global address  
Size (bytes)  
Description  
P-Flash Block Contains Flash Configuration Field  
(see Table 463)  
0x2_0000 – 0x3_FFFF  
128 k  
The FPROT register, described in Section 4.25.3.2.9, “P-flash protection register (FPROT)", can be set to protect regions in the Flash  
memory from accidental program or erase. Three separate memory regions, one growing upward from global address 0x3_8000 in the  
Flash memory (called the lower region), one growing downward from global address 0x3_FFFF in the Flash memory (called the higher  
region), and the remaining addresses in the Flash memory, can be activated for protection. The Flash memory addresses covered by  
these protectable regions are shown in the P-Flash memory map. The higher address region is mainly targeted to hold the boot loader  
code since it covers the vector space. Default protection settings as well as security information that allows the MCU to restrict access to  
the Flash module are stored in the Flash configuration field as described in Table 463.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
325/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 463. Flash configuration field  
Global address  
Size (bytes)  
Description  
Backdoor Comparison Key  
0x3_FF00-0x3_FF07  
8
Refer to Section 4.25.4.5.11, “Verify backdoor access key command", and Section 4.25.5.1,  
“Unsecuring the MCU using backdoor key access".  
(284)  
0x3_FF08-0x3_FF0B  
4
1
Reserved  
P-Flash Protection byte  
Refer to Section 4.25.3.2.9, “P-flash protection register (FPROT)".  
(284)  
0x3_FF0C  
D-Flash Protection byte  
Refer to Section 4.25.3.2.10, “D-flash protection register (DFPROT)".  
(284)  
0x3_FF0D  
1
1
1
Flash Nonvolatile byte  
Refer to Section 4.25.3.2.16, “Flash option register (FOPT)".  
(284)  
0x3_FF0E  
Flash Security byte  
Refer to Section 4.25.3.2.2, “Flash security register (FSEC)".  
(284)  
0x3_FF0F  
Notes  
284. 0x3FF08-0x3_FF0F form a Flash phrase and must be programmed in a single command write sequence. Each byte in the 0x3_FF08 - 0x3_FF0B  
reserved field should be programmed to 0xFF.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
326/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
P-Flash START = 0x2_0000  
Flash Protected/Unprotected Region  
96 kbytes  
0x3_8000  
0x3_8400  
0x3_8800  
Flash Protected/Unprotected Lower Region  
1.0, 2.0, 4.0, 8.0 kbytes  
0x3_9000  
Protection  
Fixed End  
0x3_A000  
0x3_C000  
0x3_E000  
Flash Protected/Unprotected Region  
8.0 kbytes (up to 29 kbytes)  
Protection  
Movable End  
Protection  
Fixed End  
Flash Protected/Unprotected Higher Region  
2.0, 4.0, 8.0, 16 kbytes  
0x3_F000  
0x3_F800  
Flash Configuration Field  
16 bytes (0x3_FF00 - 0x3_FF0F)  
P-Flash END = 0x3_FFFF  
Figure 110. P-flash memory map  
Table 464. Program IFR fields  
Global Address  
Size (Bytes)  
Field description  
0x01_8000 - 0x01_8007  
0x01_8008 - 0x01_80B5  
0x01_80B6 - 0x01_80B7  
0x01_80B8 - 0x01_80BF  
0x01_80C0 - 0x01_80FF  
8
174  
2
Reserved  
Reserved  
Version ID  
Reserved  
(285)  
8
64  
Program Once Field. Refer to Section 4.25.4.5.6, “Program once command".  
Notes  
285. Used to track firmware patch versions, see Section 4.25.4.2, “IFR version ID word".  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
327/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2 Register descriptions  
The Flash module contains a set of 20 control and status registers located between 0x0100 and 0x0113. A summary of the Flash module  
registers is given in Table 465 with detailed descriptions in the following subsections.  
CAUTION  
Writes to any Flash register must be avoided while a Flash command is active (CCIF=0) to prevent  
corruption of Flash register contents and adversely affect Memory Controller behavior.  
Table 465. FTMRC128K1 register summary  
Address & Name  
7
6
5
4
3
2
1
0
R
W
R
FDIVLD  
0x0100  
FCLKDIV  
FDIVLCK  
KEYEN0  
FDIV5  
RNV5  
FDIV4  
RNV4  
FDIV3  
RNV3  
FDIV2  
RNV2  
FDIV1  
SEC1  
FDIV0  
SEC0  
KEYEN1  
0x0101  
FSEC  
W
R
0
0
0
0
0
0
0
0
0
0
0x0102  
FCCOBIX  
CCOBIX2  
0
CCOBIX1  
0
CCOBIX0  
0
W
R
0
0
0x0103  
FRSV0  
W
R
0
0
0
0x0104  
FCNFG  
CCIE  
0
IGNSF  
0
FDFD  
FSFD  
W
R
0
0
MGBUSY  
0
0
RSVD  
0
0x0105  
FERCNFG  
DFDIE  
SFDIE  
W
R
0
0
MGSTAT1  
MGSTAT0  
0x0106  
FSTAT  
CCIF  
0
ACCERR  
0
FPVIOL  
0
W
R
0x0107  
DFDIF  
FPLS1  
DPS1  
SFDIF  
FPLS0  
DPS0  
FERSTAT  
W
R
RNV6  
0
0x0108  
FPROT  
FPOPEN  
DPOPEN  
CCOB15  
FPHDIS  
0
FPHS1  
0
FPHS0  
DPS3  
FPLDIS  
DPS2  
W
R
0x0109  
DFPROT  
W
R
0x010A  
FCCOBHI  
CCOB14  
CCOB13  
CCOB12  
CCOB11  
CCOB10  
CCOB9  
CCOB8  
W
R
0x010B  
FCCOBLO  
CCOB7  
0
CCOB6  
0
CCOB5  
0
CCOB4  
0
CCOB3  
0
CCOB2  
0
CCOB1  
0
CCOB0  
0
W
R
0x010C  
FRSV1  
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x010D  
FRSV2  
W
R
0x010E  
FRSV3  
W
R
0x010F  
FRSV4  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
328/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 465. FTMRC128K1 register summary (continued)  
Address & Name  
7
6
5
4
3
2
1
0
R
W
R
NV7  
NV6  
NV5  
NV4  
NV3  
NV2  
NV1  
NV0  
0x0110  
FOPT  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0x0111  
FRSV5  
W
R
0x0112  
FRSV6  
W
R
0x01103  
FRSV7  
W
= Unimplemented or Reserved  
4.25.3.2.1  
Flash clock divider register (FCLKDIV)  
The FCLKDIV register is used to control timed events in program and erase algorithms.  
Table 466. Flash clock divider register (FCLKDIV)  
Address: 0x0100  
7
6
FDIVLCK  
0
5
4
0
3
0
2
0
1
0
0
0
R
W
FDIVLD  
FDIV[5:0]  
Reset  
0
0
= Unimplemented or Reserved  
All bits in the FCLKDIV register are readable, bit 7 is not writable, bit 6 is write-once-hi and controls the writability of the FDIV field.  
CAUTION  
The FCLKDIV register must never be written to while a Flash command is executing (CCIF=0). The  
FCLKDIV register is writable during the Flash reset sequence even though CCIF is clear.  
Table 467. FCLKDIV field descriptions  
Field  
Description  
Clock Divider Loaded  
7
0
1
FCLKDIV register has not been written since the last reset  
FCLKDIV register has been written since the last reset  
FDIVLD  
Clock Divider Locked  
6
0
1
FDIV field is open for writing  
FDIVLCK  
FDIV value is locked and cannot be changed. Once the lock bit is set high, only reset can clear this bit and restore writability to the  
FDIV field.  
Clock Divider Bits — FDIV[5:0] must be set to effectively divide BUSCLK down to 1.0 MHz to control timed events during Flash program  
and erase algorithms. Table 468 shows recommended values for FDIV[5:0] based on the BUSCLK frequency. Refer to Section 4.25.4.3,  
“Flash command operations", for more information.  
5–0  
FDIV[5:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
329/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 468. FDIV values for various BUSCLK frequencies  
BUSCLK frequency (MHz)  
BUSCLK frequency (MHz)  
FDIV[5:0]  
FDIV[5:0]  
(286)  
(287)  
(286)  
(287)  
MIN.  
MAX.  
MIN.  
MAX.  
1.0  
1.6  
0x00  
0x01  
0x02  
0x03  
0x04  
0x05  
0x06  
0x07  
0x08  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E  
0x0F  
16.6  
17.6  
0x10  
0x11  
0x12  
0x13  
0x14  
0x15  
0x16  
0x17  
0x18  
0x19  
0x1A  
0x1B  
0x1C  
0x1D  
0x1E  
0x1F  
1.6  
2.6  
2.6  
3.6  
17.6  
18.6  
19.6  
20.6  
21.6  
22.6  
23.6  
24.6  
25.6  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
18.6  
19.6  
20.6  
21.6  
22.6  
23.6  
24.6  
25.6  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
3.6  
4.6  
4.6  
5.6  
5.6  
6.6  
6.6  
7.6  
7.6  
8.6  
8.6  
9.6  
9.6  
10.6  
11.6  
12.6  
13.6  
14.6  
15.6  
16.6  
10.6  
11.6  
12.6  
13.6  
14.6  
15.6  
Notes  
286. BUSCLK is Greater Than this value.  
287. BUSCLK is Less Than or Equal to this value.  
4.25.3.2.2  
Flash security register (FSEC)  
The FSEC register holds all bits associated with the security of the MCU and Flash module.  
Table 469. Flash security register (FSEC)  
Address: 0x0101  
7
F
6
F
5
4
F
3
F
2
F
1
F
0
F
R
W
KEYEN[1:0]  
RNV[5:2]  
SEC[1:0]  
Reset  
F
= Unimplemented or Reserved  
All bits in the FSEC register are readable, but not writable.  
During the reset sequence, the FSEC register is loaded with the contents of the Flash security byte in the Flash configuration field at global  
address 0x3_FF0F located in P-Flash memory (see Table 463), as indicated by reset condition F in Figure 469. If a double bit fault is  
detected, while reading the P-Flash phrase containing the Flash security byte during the reset sequence, all bits in the FSEC register will  
be set to leave the Flash module in a secured state with backdoor key access disabled.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
330/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 470. FSEC field descriptions  
Field  
Description  
7–6  
Backdoor Key Security Enable Bits — The KEYEN[1:0] bits define the enabling of backdoor key access to the Flash module as shown  
in Table 471.  
KEYEN[1:0]  
5–2  
RNV[5:2}  
Reserved Nonvolatile Bits — The RNV bits should remain in the erased state for future enhancements.  
1–0  
Flash Security Bits — The SEC[1:0] bits define the security state of the MCU as shown in Table 472. If the Flash module is unsecured  
using backdoor key access, the SEC bits are forced to 10.  
SEC[1:0]  
Table 471. Flash KEYEN states  
KEYEN[1:0]  
Status of backdoor key access  
00  
01  
10  
11  
DISABLED  
(288)  
DISABLED  
ENABLED  
DISABLED  
Notes  
288. Preferred KEYEN state to disable backdoor key access.  
Table 472. Flash Security States  
SEC[1:0]  
Status of security  
00  
01  
10  
11  
SECURED  
(289)  
SECURED  
UNSECURED  
SECURED  
Notes  
289. Preferred SEC state to set MCU to secured state.  
The security function in the Flash module is described in Section 4.25.5, “Security".  
4.25.3.2.3  
Flash CCOB index register (FCCOBIX)  
The FCCOBIX register is used to index the FCCOB register for Flash memory operations.  
Table 473. FCCOB index register (FCCOBIX)  
Address: 0x0102  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
R
W
CCOBIX[2:0]  
0
Reset  
0
0
0
0
0
= Unimplemented or Reserved  
CCOBIX bits are readable and writable while remaining bits read 0 and are not writable.  
Table 474. FCCOBIX field descriptions  
Field  
Description  
2–0  
Common Command Register Index— The CCOBIX bits are used to select to which word of the FCCOB register array is being read  
or written. See Section 4.25.3.2.11, “Flash common command object register (FCCOB)" for more details.  
CCOBIX[1:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
331/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.4  
Flash reserved0 register (FRSV0)  
This Flash register is reserved for factory testing.  
Table 475. Flash reserved0 register (FRSV0)  
Address: 0x0103  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV0 register read 0 and are not writable.  
4.25.3.2.5  
Flash configuration register (FCNFG)  
The FCNFG register enables the Flash command complete interrupt and forces ECC faults on Flash array read access from the CPU.  
Table 476. Flash configuration register (FCNFG)  
Address: 0x0104  
7
CCIE  
0
6
0
5
0
4
IGNSF  
0
3
0
2
0
1
FDFD  
0
0
FSFD  
0
R
W
Reset  
0
0
0
0
= Unimplemented or Reserved  
CCIE, IGNSF, FDFD, and FSFD bits are readable and writable while remaining bits read 0 and are not writable.  
Table 477. FCNFG field descriptions  
Field  
Description  
Command Complete Interrupt Enable — The CCIE bit controls interrupt generation when a Flash command has completed.  
7
0
1
Command complete interrupt disabled  
An interrupt will be requested whenever the CCIF flag in the FSTAT register is set (see Section 4.25.3.2.7, “Flash status register  
(FSTAT)")  
CCIE  
Ignore Single Bit Fault — The IGNSF controls single bit fault reporting in the FERSTAT register (see Section 4.25.3.2.8, “Flash error  
status register (FERSTAT)").  
4
0
1
All single bit faults detected during array reads are reported  
Single bit faults detected during array reads are not reported and the single bit fault interrupt will not be generated  
IGNSF  
Force Double Bit Fault Detect — The FDFD bit allows the user to simulate a double bit fault during Flash array read operations, and  
check the associated interrupt routine. The FDFD bit is cleared by writing a 0 to FDFD. The FECCR registers will not be updated during  
the Flash array read operation with FDFD set unless an actual double bit fault is detected.  
1
0
1
Flash array read operations will set the DFDIF flag in the FERSTAT register only if a double bit fault is detected  
Any Flash array read operation will force the DFDIF flag in the FERSTAT register to be set (see Section 4.25.3.2.7, “Flash status  
register (FSTAT)") and an interrupt will be generated, as long as the DFDIE interrupt enable in the FERCNFG register is set (see  
Section 4.25.3.2.6, “Flash error configuration register (FERCNFG)")  
FDFD  
Force Single Bit Fault Detect The FSFD bit allows the user to simulate a single bit fault during Flash array read operations, and  
check the associated interrupt routine. The FSFD bit is cleared by writing a 0 to FSFD. The FECCR registers will not be updated during  
the Flash array read operation with FSFD set unless an actual single bit fault is detected.  
0
0
1
Flash array read operations will set the SFDIF flag in the FERSTAT register only if a single bit fault is detected  
Flash array read operation will force the SFDIF flag in the FERSTAT register to be set (see Section 4.25.3.2.7, “Flash status register  
(FSTAT)"), and an interrupt will be generated as long as the SFDIE interrupt enable in the FERCNFG register is set (see  
Section 4.25.3.2.6, “Flash error configuration register (FERCNFG)")  
FSFD  
4.25.3.2.6  
Flash error configuration register (FERCNFG)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
332/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
The FERCNFG register enables the Flash error interrupts for the FERSTAT flags.  
Table 478. Flash error configuration register (FERCNFG)  
Address: 0x0105  
7
0
6
0
5
0
4
0
3
0
2
0
1
DFDIE  
0
0
SFDIE  
0
R
W
Reset  
0
0
0
0
0
0
= Unimplemented or Reserved  
All assigned bits in the FERCNFG register are readable and writable.  
Table 479. FERCNFG field descriptions  
Field  
Description  
Double Bit Fault Detect Interrupt Enable — The DFDIE bit controls interrupt generation when a double bit fault is detected during a  
Flash block read operation.  
1
0
1
DFDIF interrupt disabled  
DFDIE  
An interrupt will be requested whenever the DFDIF flag is set (see Section 4.25.3.2.8, “Flash error status register (FERSTAT)")  
Single Bit Fault Detect Interrupt Enable — The SFDIE bit controls interrupt generation when a single bit fault is detected during a Flash  
block read operation.  
0
0
1
SFDIF interrupt disabled whenever the SFDIF flag is set (see Section 4.25.3.2.8, “Flash error status register (FERSTAT)")  
An interrupt will be requested whenever the SFDIF flag is set (see Section 4.25.3.2.8, “Flash error status register (FERSTAT)")  
SFDIE  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
333/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.7  
Flash status register (FSTAT)  
The FSTAT register reports the operational status of the Flash module.  
Table 480. Flash status register (FSTAT)  
Address: 0x0106  
7
CCIF  
1
6
0
5
ACCERR  
0
4
FPVIOL  
0
3
2
1
0
R
W
MGBUSY  
RSVD  
MGSTAT[1:0]  
(290)  
(290)  
Reset  
0
0
0
0
0
= Unimplemented or Reserved  
Notes  
290. Reset value can deviate from the value shown if a double bit fault is detected during the reset sequence (see Section 4.25.6, “Initialization").  
CCIF, ACCERR, and FPVIOL bits are readable and writable, MGBUSY and MGSTAT bits are readable but not writable, while remaining  
bits read 0 and are not writable.  
Table 481. FSTAT field descriptions  
Field  
Description  
Command Complete Interrupt Flag — The CCIF flag indicates that a Flash command has completed. The CCIF flag is cleared by  
writing a 1 to CCIF to launch a command and CCIF will stay low until command completion or command violation.  
7
0
1
Flash command in progress  
Flash command has completed  
CCIF  
Flash Access Error Flag — The ACCERR bit indicates an illegal access has occurred to the Flash memory caused by either a  
violation of the command write sequence (see Section 4.25.4.3.2, “Command write sequence") or issuing an illegal Flash command.  
While ACCERR is set, the CCIF flag cannot be cleared to launch a command. The ACCERR bit is cleared by writing a 1 to ACCERR.  
Writing a 0 to the ACCERR bit has no effect on ACCERR.  
5
ACCERR  
0
1
No access error detected  
Access error detected  
Flash Protection Violation Flag —The FPVIOL bit indicates an attempt was made to program or erase an address in a protected  
area of P-Flash or D-Flash memory during a command write sequence. The FPVIOL bit is cleared by writing a 1 to FPVIOL. Writing a  
0 to the FPVIOL bit has no effect on FPVIOL. While FPVIOL is set, it is not possible to launch a command or start a command write  
sequence.  
4
FPVIOL  
0
1
No protection violation detected  
Protection violation detected  
Memory Controller Busy Flag — The MGBUSY flag reflects the active state of the Memory Controller.  
3
0
1
Memory Controller is idle  
MGBUSY  
Memory Controller is busy executing a Flash command (CCIF = 0)  
2
Reserved Bit — This bit is reserved and always reads 0.  
RSVD  
Memory Controller Command Completion Status Flag — One or more MGSTAT flag bits are set if an error is detected during  
execution of a Flash command or during the Flash reset sequence. See Section 4.25.4.5, “Flash command description", and  
Section 4.25.6, “Initialization", for details.  
1–0  
MGSTAT[1:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
334/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.8  
Flash error status register (FERSTAT)  
The FERSTAT register reflects the error status of internal Flash operations.  
Table 482. Flash error status register (FERSTAT)  
Address: 0x0107  
7
0
6
0
5
0
4
0
3
0
2
0
1
DFDIF  
0
0
SFDIF  
0
R
W
Reset  
0
0
0
0
0
0
= Unimplemented or Reserved  
All flags in the FERSTAT register are readable and only writable to clear the flag.  
Table 483. FERSTAT field descriptions  
Field  
Description  
Double Bit Fault Detect Interrupt Flag — The setting of the DFDIF flag indicates that a double bit fault was detected in the stored parity  
and data bits during a Flash array read operation, or that a Flash array read operation was attempted on a Flash block that was under a  
1
(291)  
Flash command operation.  
The DFDIF flag is cleared by writing a 1 to DFDIF. Writing a 0 to DFDIF has no effect on DFDIF.  
DFDIF  
0
1
No double bit fault detected  
Double bit fault detected or an invalid Flash array read operation attempted  
Single Bit Fault Detect Interrupt Flag — With the IGNSF bit in the FCNFG register clear, the SFDIF flag indicates that a single bit fault  
was detected in the stored parity and data bits during a Flash array read operation, or that a Flash array read operation was attempted  
(291)  
on a Flash block that was under a Flash command operation.  
has no effect on SFDIF.  
The SFDIF flag is cleared by writing a 1 to SFDIF. Writing a 0 to SFDIF  
0
SFDIF  
0
1
No single bit fault detected  
Single bit fault detected and corrected or an invalid Flash array read operation attempted  
Notes  
291. The single bit fault and double bit fault flags are mutually exclusive for parity errors (an ECC fault occurrence can be either single fault or double  
fault but never both). A simultaneous access collision (read attempted while command running) is indicated when both SFDIF and DFDIF flags are  
high.  
4.25.3.2.9  
P-flash protection register (FPROT)  
The FPROT register defines which P-Flash sectors are protected against program and erase operations.  
Table 484. Flash protection register (FPROT)  
Address: 0x0108  
7
FPOPEN  
F
6
5
FPHDIS  
F
4
F
3
F
2
FPLDIS  
F
1
F
0
F
R
W
RNV6  
FPHS[1:0]  
FPLS[1:0]  
Reset  
F
= Unimplemented or Reserved  
The (unreserved) bits of the FPROT register are writable with the restriction that the size of the protected region can only be increased  
(see Section 4.25.3.2.9.1, “P-flash protection restrictions", and Table 489).  
During the reset sequence, the FPROT register is loaded with the contents of the P-Flash protection byte in the Flash configuration field  
at global address 0x3_FF0C located in P-Flash memory (see Table 463), as indicated by reset condition ‘F’ in Figure 484. To change the  
P-Flash protection that will be loaded during the reset sequence, the upper sector of the P-Flash memory must be unprotected, then the  
P-Flash protection byte must be reprogrammed. If a double bit fault is detected while reading the P-Flash phrase containing the P-Flash  
protection byte during the reset sequence, the FPOPEN bit will be cleared and remaining bits in the FPROT register will be set to leave  
the P-Flash memory fully protected.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
335/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Trying to alter data in any protected area in the P-Flash memory will result in a protection violation error and the FPVIOL bit will be set in  
the FSTAT register. The block erase of a P-Flash block is not possible if any of the P-Flash sectors contained in the same P-Flash block  
are protected.  
Table 485. FPROT field descriptions  
Field  
Description  
Flash Protection Operation Enable — The FPOPEN bit determines the protection function for program or erase operations as shown  
in Table 486, for the P-Flash block.  
7
0
1
When FPOPEN is clear, the FPHDIS and FPLDIS bits define unprotected address ranges as specified by the corresponding FPHS  
and FPLS bits  
When FPOPEN is set, the FPHDIS and FPLDIS bits enable protection for the address range specified by the corresponding FPHS  
and FPLS bits  
FPOPEN  
6
Reserved Nonvolatile Bit — The RNV bit should remain in the erased state for future enhancements.  
RNV[6]  
Flash Protection Higher Address Range Disable — The FPHDIS bit determines whether there is a protected/unprotected area in a  
specific region of the P-Flash memory ending with global address 0x3_FFFF.  
5
0
1
Protection/Unprotection enabled  
Protection/Unprotection disabled  
FPHDIS  
4–3  
Flash Protection Higher Address Size — The FPHS bits determine the size of the protected/unprotected area in P-Flash memory as  
shown inTable 487. The FPHS bits can only be written to while the FPHDIS bit is set.  
FPHS[1:0]  
Flash Protection Lower Address Range Disable — The FPLDIS bit determines whether there is a protected/unprotected area in a  
specific region of the P-Flash memory beginning with global address 0x3_8000.  
2
0
1
Protection/Unprotection enabled  
Protection/Unprotection disabled  
FPLDIS  
1–0  
Flash Protection Lower Address Size — The FPLS bits determine the size of the protected/unprotected area in P-Flash memory as  
shown in Table 488. The FPLS bits can only be written to while the FPLDIS bit is set.  
FPLS[1:0]  
Table 486. P-flash protection function  
(292)  
FPOPEN  
FPHDIS  
FPLDIS  
Function  
No P-Flash Protection  
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
Protected Low Range  
Protected High Range  
Protected High and Low Ranges  
Full P-Flash Memory Protected  
Unprotected Low Range  
Unprotected High Range  
Unprotected High and Low Ranges  
Notes  
292. For range sizes, refer to Table 487 and Table 488.  
Table 487. P-flash protection higher address range  
FPHS[1:0]  
Global address range  
0x3_F800–0x3_FFFF  
0x3_F000–0x3_FFFF  
0x3_E000–0x3_FFFF  
0x3_C000–0x3_FFFF  
Protected size  
2.0 kbytes  
4.0 kbytes  
8.0 kbytes  
16 kbytes  
00  
01  
10  
11  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
336/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 488. P-Flash protection lower address range  
FPLS[1:0]  
Global address range  
0x3_8000–0x3_83FF  
0x3_8000–0x3_87FF  
0x3_8000–0x3_8FFF  
0x3_8000–0x3_9FFF  
Protected size  
00  
01  
10  
11  
1.0 kbyte  
2.0 kbytes  
4.0 kbytes  
8.0 kbytes  
All possible P-Flash protection scenarios are shown in Figure 111. Although the protection scheme is loaded from the Flash memory at  
global address 0x3_FF0C during the reset sequence, it can be changed by the user. The P-Flash protection scheme can be used by  
applications requiring reprogramming in single chip mode while providing as much protection as possible, if reprogramming is not  
required.  
FPHDIS = 1  
FPLDIS = 1  
FPHDIS = 1  
FPLDIS = 0  
FPHDIS = 0  
FPLDIS = 1  
FPHDIS = 0  
FPLDIS = 0  
Scenario  
7
6
5
4
FLASH START  
0x3_8000  
0x3_FFFF  
Scenario  
FLASH START  
3
2
1
0
0x3_8000  
0x3_FFFF  
Protected region with size  
defined by FPLS  
Unprotected region  
Protected region  
not defined by FPLS, FPHS  
Protected region with size  
defined by FPHS  
Figure 111. P-flash protection scenarios  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
337/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.9.1 P-flash protection restrictions  
The general guideline is that P-Flash protection can only be added and not removed. Table 489 specifies all valid transitions between  
P-Flash protection scenarios. Any attempt to write an invalid scenario to the FPROT register will be ignored. The contents of the FPROT  
register reflect the active protection scenario. See the FPHS and FPLS bit descriptions for additional restrictions.  
Table 489. P-flash protection scenario transitions  
(293)  
From  
To Protection Scenario  
protection  
scenario  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Notes  
293. Allowed transitions marked with X, see Figure 111 for a definition of the scenarios.  
4.25.3.2.10 D-flash protection register (DFPROT)  
The DFPROT register defines which D-Flash sectors are protected against program and erase operations.  
Table 490. D-flash protection register (DFPROT)  
Address: 0x0109  
7
DPOPEN  
F
6
0
5
0
4
0
3
F
2
F
1
F
0
F
R
W
DPS[3:0]  
Reset  
0
0
0
= Unimplemented or Reserved  
The (unreserved) bits of the DFPROT register are writable with the restriction that protection can be added but not removed. Writes must  
increase the DPS value and the DPOPEN bit can only be written from a 1 (protection disabled) to a 0 (protection enabled). If the DPOPEN  
bit is set, the state of the DPS bits is irrelevant.  
During the reset sequence, the DFPROT register is loaded with the contents of the D-Flash protection byte in the Flash configuration field  
at global address 0x3_FF0D located in P-Flash memory (see Table 463) as indicated by reset condition F in Figure 490. To change the  
D-Flash protection that will be loaded during the reset sequence, the P-Flash sector containing the D-Flash protection byte must be  
unprotected, then the D-Flash protection byte must be programmed. If a double bit fault is detected while reading the P-Flash phrase  
containing the D-Flash protection byte during the reset sequence, the DPOPEN bit will be cleared and DPS bits will be set to leave the  
D-Flash memory fully protected.  
Trying to alter data in any protected area in the D-Flash memory will result in a protection violation error, and the FPVIOL bit will be set in  
the FSTAT register. Block erase of the D-Flash memory is not possible if any of the D-Flash sectors are protected.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
338/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 491. DFPROT field descriptions  
Field  
Description  
D-Flash Protection Control  
7
0
1
Enables D-Flash memory protection from program and erase with protected address range defined by DPS bits  
Disables D-Flash memory protection from program and erase  
DPOPEN  
3–0  
DPS[3:0]  
D-Flash Protection Size — The DPS[3:0] bits determine the size of the protected area in the D-Flash memory as shown in Table 492.  
Table 492. D-flash protection address range  
DPS[3:0]  
0000  
0001  
0010  
0011  
0100  
0101  
0110  
0111  
Global address range  
0x0_4400 – 0x0_44FF  
0x0_4400 – 0x0_45FF  
0x0_4400 – 0x0_46FF  
0x0_4400 – 0x0_47FF  
0x0_4400 – 0x0_48FF  
0x0_4400 – 0x0_49FF  
0x0_4400 – 0x0_4AFF  
0x0_4400 – 0x0_4BFF  
0x0_4400 – 0x0_4CFF  
0x0_4400 – 0x0_4DFF  
0x0_4400 – 0x0_4EFF  
0x0_4400 – 0x0_4FFF  
0x0_4400 – 0x0_50FF  
0x0_4400 – 0x0_51FF  
0x0_4400 – 0x0_52FF  
0x0_4400 – 0x0_53FF  
Protected size  
256 bytes  
512 bytes  
768 bytes  
1024 bytes  
1280 bytes  
1536 bytes  
1792 bytes  
2048 bytes  
2304 bytes  
2560 bytes  
2816 bytes  
3072 bytes  
3328 bytes  
3584 bytes  
3840 bytes  
4096 bytes  
1000  
1001  
1010  
1011  
1100  
1101  
1110  
1111  
4.25.3.2.11 Flash common command object register (FCCOB)  
The FCCOB is an array of six words addressed via the CCOBIX index found in the FCCOBIX register. Byte wide reads and writes are  
allowed to the FCCOB register.  
Table 493. Flash common command object high register (FCCOBHI)  
Address: 0x010A  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
CCOB[15:8]  
Reset  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
339/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 494. Flash common command object low register (FCCOBLO)  
Address: 0x010B  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
CCOB[7:0]  
Reset  
4.25.3.2.11.1 FCCOB - NVM command mode  
NVM command mode uses the indexed FCCOB register to provide a command code and its relevant parameters to the Memory  
Controller. The user first sets up all required FCCOB fields and then initiates the command’s execution by writing a 1 to the CCIF bit in  
the FSTAT register (a 1 written by the user clears the CCIF command completion flag to 0). When the user clears the CCIF bit in the FSTAT  
register all FCCOB parameter fields are locked and cannot be changed by the user until the command completes (as evidenced by the  
Memory Controller returning CCIF to 1). Some commands return information to the FCCOB register array.  
The generic format for the FCCOB parameter fields in NVM command mode is shown in Table 495. The return values are available for  
reading after the CCIF flag in the FSTAT register has been returned to 1 by the Memory Controller. Writes to the unimplemented parameter  
fields (CCOBIX = 110 and CCOBIX = 111) are ignored with reads from these fields returning 0x0000.  
Table 495 shows the generic Flash command format. The high byte of the first word in the CCOB array contains the command code,  
followed by the parameters for this specific Flash command. For details on the FCCOB settings required by each command, see the Flash  
command descriptions in Section 4.25.4.5, “Flash command description".  
Table 495. FCCOB - NVM command mode (typical usage)  
CCOBIX[2:0]  
Byte  
HI  
FCCOB parameter fields (NVM command mode)  
FCMD[7:0] defining Flash command  
6’h0, Global address [17:16]  
Global address [15:8]  
Global address [7:0]  
Data 0 [15:8]  
000  
LO  
HI  
001  
010  
011  
100  
101  
LO  
HI  
LO  
HI  
Data 0 [7:0]  
Data 1 [15:8]  
LO  
HI  
Data 1 [7:0]  
Data 2 [15:8]  
LO  
HI  
Data 2 [7:0]  
Data 3 [15:8]  
LO  
Data 3 [7:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
340/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.12 Flash reserved1 register (FRSV1)  
This Flash register is reserved for factory testing.  
Table 496. Flash reserved1 register (FRSV1)  
Address: 0x010C  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV1 register read 0 and are not writable.  
4.25.3.2.13 Flash reserved2 register (FRSV2)  
This Flash register is reserved for factory testing.  
Table 497. Flash reserved2 register (FRSV2)  
Address: 0x010D  
7
0
6
0
5
0
4
0
3
2
1
0
R
W
0
0
0
0
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV2 register read 0 and are not writable.  
4.25.3.2.14 Flash reserved3 register (FRSV3)  
This Flash register is reserved for factory testing.  
Table 498. Flash reserved3 register (FRSV3)  
Address: 0x010E  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
R
W
0
0
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV3 register read 0 and are not writable.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
341/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.3.2.15 Flash reserved4 register (FRSV4)  
This Flash register is reserved for factory testing.  
Table 499. Flash reserved4 register (FRSV4)  
Address: 0x010F  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV4 register read 0 and are not writable.  
4.25.3.2.16 Flash option register (FOPT)  
The FOPT register is the Flash option register.  
Table 500. Flash option register (FOPT)  
Address: 0x0110  
7
F
6
F
5
4
F
3
F
2
F
1
F
0
F
R
W
NV[7:0]  
Reset  
F
= Unimplemented or Reserved  
All bits in the FOPT register are readable but are not writable.  
During the reset sequence, the FOPT register is loaded from the Flash nonvolatile byte in the Flash configuration field, at global address  
0x3_FF0E located in P-Flash memory (see Table 463), as indicated by reset condition F in Figure 500. If a double bit fault is detected  
while reading the P-Flash phrase containing the Flash nonvolatile byte during the reset sequence, all bits in the FOPT register will be set.  
Table 501. FOPT field descriptions  
Field  
Description  
7–0  
NV[7:0]  
Nonvolatile Bits — The NV[7:0] bits are available as nonvolatile bits. Refer to the device user guide for proper use of the NV bits.  
4.25.3.2.17 Flash reserved5 register (FRSV5)  
This Flash register is reserved for factory testing.  
Table 502. Flash reserved5 register (FRSV5)  
Address: 0x0111  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV5 register read 0 and are not writable.  
4.25.3.2.18 Flash reserved6 register (FRSV6)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
342/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
This Flash register is reserved for factory testing.  
Table 503. Flash reserved6 register (FRSV6)  
Address: 0x0112  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV6 register read 0 and are not writable.  
4.25.3.2.19 Flash reserved7 register (FRSV7)  
This Flash register is reserved for factory testing.  
Table 504. Flash reserved7 register (FRSV7)  
Address: 0x0113  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
W
Reset  
0
0
0
0
0
0
0
0
= Unimplemented or Reserved  
All bits in the FRSV7 register read 0 and are not writable.  
4.25.4 Functional description  
4.25.4.1 Modes of operation  
The FTMRC128K1 module provides the modes of operation, as shown in Table 505. The operating mode is determined by module-level  
inputs and affects the FCLKDIV, FCNFG, and DFPROT registers, Scratch RAM writes, and the command set availability (see Table 507).  
Table 505. Modes and mode control inputs  
FTMRC input  
Operating mode  
mmc_mode_ss_t2  
Normal:  
Special:  
0
1
4.25.4.2 IFR version ID word  
The version ID word is stored in the IFR at address 0x01_80B6. The contents of the word are defined in Table 506.  
Table 506. IFR version ID fields  
[15:4]  
[3:0]  
Reserved  
VERNUM  
VERNUM: Version number. The first version is number 0b_0001 with both 0b_0000 and 0b_1111 meaning ‘none’.  
4.25.4.3 Flash command operations  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
343/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Flash command operations are used to modify Flash memory contents.  
The next sections describe:  
How to write the FCLKDIV register that is used to generate a time base (FCLK) derived from BUSCLK for Flash program and  
erase command operations  
The command write sequence used to set Flash command parameters and launch execution  
Valid Flash commands available for execution  
4.25.4.3.1  
Writing the FCLKDIV register  
Prior to issuing any Flash program or erase command after a reset, the user is required to write the FCLKDIV register to divide BUSCLK  
down to a target FCLK of 1.0 MHz. Table 468 shows recommended values for the FDIV field based on BUSCLK frequency.  
NOTE  
Programming or erasing the Flash memory cannot be performed if the bus clock runs at less than  
0.8 MHz. Setting FDIV too high can destroy the Flash memory due to overstress. Setting FDIV too  
low can result in incomplete programming or erasure of the Flash memory cells.  
When the FCLKDIV register is written, the FDIVLD bit is set automatically. If the FDIVLD bit is 0, the FCLKDIV register has not been written  
since the last reset. If the FCLKDIV register has not been written, any Flash program or erase command loaded during a command write  
sequence will not execute and the ACCERR bit in the FSTAT register will set.  
4.25.4.3.2  
Command write sequence  
The Memory Controller will launch all valid Flash commands entered using a command write sequence.  
Before launching a command, the ACCERR and FPVIOL bits in the FSTAT register must be clear (see Section 4.25.3.2.7, “Flash status  
register (FSTAT)") and the CCIF flag should be tested to determine the status of the current command write sequence. If CCIF is 0, the  
previous command write sequence is still active and a new command write sequence cannot be started, and all writes to the FCCOB  
register are ignored.  
CAUTION  
Writes to any Flash register must be avoided while a Flash command is active (CCIF=0) to prevent  
corruption of Flash register contents and Memory Controller behavior.  
4.25.4.3.2.1 Define FCCOB contents  
The FCCOB parameter fields must be loaded with all required parameters for the Flash command being executed. Access to the FCCOB  
parameter fields is controlled via the CCOBIX bits in the FCCOBIX register (see Section 4.25.3.2.3, “Flash CCOB index register  
(FCCOBIX)").  
The contents of the FCCOB parameter fields are transferred to the Memory Controller when the user clears the CCIF command  
completion flag in the FSTAT register (writing 1 clears the CCIF to 0). The CCIF flag will remain clear until the Flash command has  
completed. Upon completion, the Memory Controller will return CCIF to 1 and the FCCOB register will be used to communicate any  
results. The flow for a generic command write sequence is shown in Figure 112.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
344/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
START  
Read: FCLKDIV register  
no  
Clock Divider  
Value Check  
FDIV  
Correct?  
no  
CCIF  
Set?  
Read: FSTAT register  
yes  
yes  
Note: FCLKDIV must be  
set after each reset  
FCCOB  
Availability Check  
Read: FSTAT register  
no  
Write: FCLKDIV register  
CCIF  
Set?  
yes  
Results from previous Command  
ACCERR/  
FPVIOL  
Set?  
yes  
Access Error and  
Protection Violation  
Check  
Write: FSTAT register  
Clear ACCERR/FPVIOL 0x30  
no  
Write to FCCOBIX register  
to identify specific command  
parameter to load.  
Write to FCCOB register  
to load required command parameter.  
More  
Parameters?  
yes  
no  
Write: FSTAT register (to launch command)  
Clear CCIF 0x80  
Read: FSTAT register  
Bit Polling for  
Command Completion  
Check  
no  
CCIF Set?  
yes  
EXIT  
Figure 112. Generic flash command write sequence flowchart  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
345/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.4.3.3  
Valid flash module commands  
Table 507. Flash commands by mode  
Unsecured  
Secured  
FCMD  
Command  
(294)  
(295)  
(296)  
(297)  
NS  
SS  
NS  
SS  
0x01  
0x02  
0x03  
0x04  
0x06  
0x07  
0x08  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E  
0x10  
0x11  
0x12  
Erase Verify All Blocks  
Erase Verify Block  
Erase Verify P-Flash Section  
Read Once  
Program P-Flash  
Program Once  
Erase All Blocks  
Erase Flash Block  
Erase P-Flash Sector  
Unsecure Flash  
Verify Backdoor Access Key  
Set User Margin Level  
Set Field Margin Level  
Erase Verify D-Flash Section  
Program D-Flash  
Erase D-Flash Sector  
Notes  
294. Unsecured Normal Single Chip mode.  
295. Unsecured Special Single Chip mode.  
296. Secured Normal Single Chip mode.  
297. Secured Special Single Chip mode.  
4.25.4.3.4  
P-flash commands  
Table 508 summarizes the valid P-Flash commands along with the effects of the commands on the P-Flash block and other resources  
within the Flash module.  
Table 508. P-flash commands  
FCMD  
0x01  
0x02  
0x03  
Command  
Function on P-flash memory  
Verify that all P-Flash (and D-Flash) blocks are erased.  
Verify that a P-Flash block is erased.  
Erase Verify All Blocks  
Erase Verify Block  
Erase Verify P-Flash Section Verify that a given number of words starting at the address provided are erased.  
Read a dedicated 64-byte field in the nonvolatile information register in P-Flash block that was previously  
programmed using the Program Once command.  
0x04  
0x06  
0x07  
Read Once  
Program P-Flash  
Program Once  
Program a phrase in a P-Flash block.  
Program a dedicated 64-byte field in the nonvolatile information register in P-Flash block that is allowed to be  
programmed only once.  
Erase all P-Flash (and D-Flash) blocks.  
0x08  
Erase All Blocks  
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN bits in the FPROT  
register and the DPOPEN bit in the DFPROT register are set prior to launching the command.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
346/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 508. P-flash commands (continued)  
FCMD  
Command  
Function on P-flash memory  
Erase a P-Flash (or D-Flash) block.  
0x09  
Erase Flash Block  
An erase of the full P-Flash block is only possible when FPLDIS, FPHDIS and FPOPEN bits in the FPROT  
register are set prior to launching the command.  
0x0A  
0x0B  
Erase P-Flash Sector  
Unsecure Flash  
Erase all bytes in a P-Flash sector.  
Supports a method of releasing MCU security by erasing all P-Flash (and D-Flash) blocks and verifying that all  
P-Flash (and D-Flash) blocks are erased.  
0x0C  
0x0D  
0x0E  
Verify Backdoor Access Key Supports a method of releasing MCU security by verifying a set of security keys.  
Set User Margin Level  
Set Field Margin Level  
Specifies a user margin read level for all P-Flash blocks.  
Specifies a field margin read level for all P-Flash blocks (special modes only).  
4.25.4.3.5  
D-flash commands  
Table 509 summarizes the valid D-Flash commands along with the effects of the commands on the D-Flash block.  
Table 509. D-flash commands  
FCMD  
0x01  
Command  
Function on D-flash memory  
Verify that all D-Flash (and P-Flash) blocks are erased.  
Erase Verify All Blocks  
Erase Verify Block  
0x02  
Verify that the D-Flash block is erased.  
Erase all D-Flash (and P-Flash) blocks.  
0x08  
Erase All Blocks  
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN bits in the FPROT register  
and the DPOPEN bit in the DFPROT register are set prior to launching the command.  
Erase a D-Flash (or P-Flash) block.  
0x09  
0x0B  
Erase Flash Block  
Unsecure Flash  
An erase of the full D-Flash block is only possible when DPOPEN bit in the DFPROT register is set prior to  
launching the command.  
Supports a method of releasing MCU security by erasing all D-Flash (and P-Flash) blocks and verifying that all  
D-Flash (and P-Flash) blocks are erased.  
0x0D  
0x0E  
Set User Margin Level  
Set Field Margin Level  
Specifies a user margin read level for the D-Flash block.  
Specifies a field margin read level for the D-Flash block (special modes only).  
Erase Verify D-Flash  
Section  
0x10  
Verify that a given number of words starting at the address provided are erased.  
0x11  
0x12  
Program D-Flash  
Program up to four words in the D-Flash block.  
Erase all bytes in a sector of the D-Flash block.  
Erase D-Flash Sector  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
347/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.4.4 Allowed simultaneous P-flash and D-flash operations  
Only the operations marked ‘OK’ in Table 510 are permitted to be run simultaneously on the Program Flash and Data Flash blocks. Some  
operations cannot be executed simultaneously because certain hardware resources are shared by the two memories. The priority has  
been placed on permitting Program Flash reads while program and erase operations execute on the Data Flash, providing read (P-Flash)  
while write (D-Flash) functionality.  
Table 510. Allowed P-flash and D-flash simultaneous operations  
Data flash  
Margin read  
Mass erase  
Program flash  
Read  
Read  
Program  
Sector erase  
(298)  
(300)  
OK  
OK  
OK  
(298)  
(299)  
Margin read  
OK  
Program  
Sector erase  
OK  
(300)  
Mass erase  
OK  
Notes  
298. A ‘Margin Read’ is any read after executing the margin setting commands ‘Set User Margin  
Level’, or ‘Set Field Margin Level’ with anything but the ‘normal’ level specified.  
299. See the Note on margin settings in Section 4.25.4.5.12, “Set user margin level command" and  
Section 4.25.4.5.13, “Set field margin level command".  
300. The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase Flash Block’.  
4.25.4.5 Flash command description  
This section provides details of all available Flash commands launched by a command write sequence. The ACCERR bit in the FSTAT  
register will be set during the command write sequence if any of the following illegal steps are performed, causing the command not to be  
processed by the Memory Controller:  
Starting any command write sequence that programs or erases Flash memory before initializing the FCLKDIV register  
Writing an invalid command as part of the command write sequence  
For additional possible errors, refer to the error handling table provided for each command  
If a Flash block is read during execution of an algorithm (CCIF = 0) on that same block, the read operation will return invalid data. If the  
SFDIF or DFDIF flags were not previously set when the invalid read operation occurred, both the SFDIF and DFDIF flags will be set.  
If the ACCERR or FPVIOL bits are set in the FSTAT register, the user must clear these bits before starting any command write sequence  
(see Section 4.25.3.2.7, “Flash status register (FSTAT)").  
CAUTION  
A Flash word or phrase must be in the erased state before being programmed. Cumulative  
programming of bits within a Flash word or phrase is not allowed.  
4.25.4.5.1  
Erase verify all blocks command  
The Erase Verify All Blocks command will verify that all P-Flash and D-Flash blocks have been erased.  
Table 511. Erase verify all blocks command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
0x01  
Not required  
Upon clearing CCIF to launch the Erase Verify All Blocks command, the Memory Controller will verify that the entire Flash memory space  
is erased. The CCIF flag will set after the Erase Verify All Blocks operation has completed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
348/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 512. Erase verify all blocks command error handling  
Register  
Error bit  
ACCERR  
FPVIOL  
Error condition  
Set if CCOBIX[2:0]!= 000 at command launch  
None  
FSTAT  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the read  
Set if any non-correctable errors have been encountered during the read  
4.25.4.5.2  
Erase verify block command  
The Erase Verify Block command allows the user to verify that an entire P-Flash or D-Flash block has been erased. The FCCOB upper  
global address bits determine which block must be verified.  
Table 513. Erase verify block command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
0x02  
Global address [17:16] of the Flash block to be verified.  
Upon clearing CCIF to launch the Erase Verify Block command, the Memory Controller will verify that the selected P-Flash or D-Flash  
block is erased. The CCIF flag will set after the Erase Verify Block operation has completed.  
Table 514. Erase verify block command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 000 at command launch  
ACCERR  
Set if an invalid global address [17:16] is supplied  
None  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the read  
Set if any non-correctable errors have been encountered during the read  
4.25.4.5.3  
Erase verify P-flash section command  
The Erase Verify P-Flash Section command will verify that a section of code in the P-Flash memory is erased. The Erase Verify P-Flash  
Section command defines the starting point of the code to be verified and the number of phrases.  
Table 515. Erase verify P-flash section command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
001  
010  
0x03  
Global address [17:16] of a P-Flash block  
Global address [15:0] of the first phrase to be verified  
Number of phrases to be verified  
Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will verify the selected section of Flash  
memory is erased. The CCIF flag will set after the Erase Verify P-Flash Section operation has completed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
349/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 516. Erase verify P-flash section command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 010 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:0] is supplied  
ACCERR  
Set if a misaligned phrase address is supplied (global address [2:0]!= 000)  
Set if the requested section crosses a 128 kbyte boundary  
None  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the read  
Set if any non-correctable errors have been encountered during the read  
4.25.4.5.4  
Read once command  
The Read Once command provides read access to a reserved 64-byte field (8 phrases) located in the nonvolatile information register of  
P-Flash. The Read Once field is programmed using the Program Once command described in Section 4.25.4.5.6, “Program once  
command". The Read Once command must not be executed from the Flash block containing the Program Once reserved field to avoid  
code runaway.  
Table 517. Read once command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
001  
010  
011  
100  
101  
0x04  
Not Required  
Read Once phrase index (0x0000 - 0x0007)  
Read Once word 0 value  
Read Once word 1 value  
Read Once word 2 value  
Read Once word 3 value  
Upon clearing CCIF to launch the Read Once command, a Read Once phrase is fetched and stored in the FCCOB indexed register. The  
CCIF flag will set after the Read Once operation has completed. Valid phrase index values for the Read Once command range from  
0x0000 to 0x0007. During execution of the Read Once command, any attempt to read addresses within P-Flash block will return invalid  
data.  
Table 518. Read once command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
ACCERR  
Set if command not available in current mode (see Table 507)  
Set if an invalid phrase index is supplied  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
None  
Set if any errors have been encountered during the read  
Set if any non-correctable errors have been encountered during the read  
4.25.4.5.5  
Program P-flash command  
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an embedded algorithm.  
CAUTION  
A P-Flash phrase must be in the erased state before being programmed. Cumulative programming  
of bits within a Flash phrase is not allowed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
350/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 519. Program P-flash command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
001  
010  
011  
100  
101  
0x06  
Global address [17:16] to identify P-Flash block  
(301)  
Global address [15:0] of phrase location to be programmed  
Word 0 program value  
Word 1 program value  
Word 2 program value  
Word 3 program value  
Notes  
301. Global address [2:0] must be 000  
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the data words to the supplied global  
address and will then proceed to verify the data words read back as expected. The CCIF flag will set after the Program P-Flash operation  
has completed.  
Table 520. Program P-flash command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 101 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:0] is supplied  
ACCERR  
FSTAT  
Set if a misaligned phrase address is supplied (global address [2:0]!= 000)  
Set if the global address [17:0] points to a protected area  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.6  
Program once command  
The Program Once command restricts programming to a reserved 64-byte field (8 phrases) in the nonvolatile information register located  
in P-Flash. The Program Once reserved field can be read using the Read Once command as described in Section 4.25.4.5.4, “Read once  
command". The Program Once command must only be issued once, since the nonvolatile information register in P-Flash cannot be  
erased. The Program Once command must not be executed from the Flash block containing the Program Once reserved field to avoid  
code runaway.  
Table 521. Program once command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
001  
010  
011  
100  
101  
0x07  
Not Required  
Program Once phrase index (0x0000 - 0x0007)  
Program Once word 0 value  
Program Once word 1 value  
Program Once word 2 value  
Program Once word 3 value  
Upon clearing CCIF to launch the Program Once command, the Memory Controller first verifies that the selected phrase is erased. If  
erased, then the selected phrase will be programmed and then verified with read back. The CCIF flag will remain clear, setting only after  
the Program Once operation has completed.  
The reserved nonvolatile information register accessed by the Program Once command cannot be erased and any attempt to program  
one of these phrases a second time will not be allowed. Valid phrase index values for the Program Once command range from 0x0000 to  
0x0007. During execution of the Program Once command, any attempt to read addresses within P-Flash will return invalid data.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
351/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 522. Program once command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 101 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid phrase index is supplied  
ACCERR  
(302)  
FSTAT  
Set if the requested phrase has already been programmed  
None  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
Notes  
302. If a Program Once phrase is initially programmed to 0xFFFF_FFFF_FFFF_FFFF, the Program Once command will be allowed to execute again on  
that same phrase.  
4.25.4.5.7  
Erase all blocks command  
The Erase All Blocks operation will erase the entire P-Flash and D-Flash memory space.  
Table 523. Erase all blocks command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
0x08  
Not required  
Upon clearing CCIF to launch the Erase All Blocks command, the Memory Controller will erase the entire Flash memory space and verify  
that it is erased. If the Memory Controller verifies that the entire Flash memory space was properly erased, security will be released. During  
the execution of this command (CCIF=0) the user must not write to any Flash module register. The CCIF flag will set after the Erase All  
Blocks operation has completed.  
Table 524. Erase all blocks command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 000 at command launch  
ACCERR  
Set if command not available in current mode (see Table 507)  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any area of the P-Flash or D-Flash memory is protected  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.8  
Erase flash block command  
The Erase Flash Block operation will erase all addresses in a P-Flash or D-Flash block.  
Table 525. Erase flash block command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
Global address [17:16] to identify Flash block  
Global address [15:0] in Flash block to be erased  
000  
001  
0x09  
Upon clearing CCIF to launch the Erase Flash Block command, the Memory Controller will erase the selected Flash block and verify that  
it is erased. The CCIF flag will set after the Erase Flash Block operation has completed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
352/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 526. Erase flash block command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
Set if command not available in current mode (see Table 507)  
ACCERR  
Set if an invalid global address [17:16] is supplied  
FSTAT  
Set if the supplied P-Flash address is not phrase-aligned or if the D-Flash address is not word-aligned  
Set if an area of the selected Flash block is protected  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.9  
Erase P-flash sector command  
The Erase P-Flash Sector operation will erase all addresses in a P-Flash sector.  
Table 527. Erase P-flash sector command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
Global address [17:16] to identify P-Flash  
block to be erased  
000  
0x0A  
Global address [15:0] anywhere within the sector to be erased.  
Refer to Section 4.25.1.2.1, “P-flash features" for the P-Flash sector size.  
001  
Upon clearing CCIF to launch the Erase P-Flash Sector command, the Memory Controller will erase the selected Flash sector and then  
verify that it is erased. The CCIF flag will be set after the Erase P-Flash Sector operation has completed.  
Table 528. Erase P-flash sector command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:16] is supplied  
ACCERR  
Set if a misaligned phrase address is supplied (global address [2:0]!= 000)  
Set if the selected P-Flash sector is protected  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.10 Unsecure flash command  
The Unsecure Flash command will erase the entire P-Flash and D-Flash memory space and, if the erase is successful, will release  
security.  
Table 529. Unsecure flash command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
0x0B  
Not required  
Upon clearing CCIF to launch the Unsecure Flash command, the Memory Controller will erase the entire P-Flash and D-Flash memory  
space and verify that it is erased. If the Memory Controller verifies that the entire Flash memory space was properly erased, security will  
be released. If the erase verify is not successful, the Unsecure Flash operation sets MGSTAT1 and terminates without changing the  
security state. During the execution of this command (CCIF=0) the user must not write to any Flash module register. The CCIF flag is set  
after the Unsecure Flash operation has completed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
353/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 530. Unsecure flash command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 000 at command launch  
ACCERR  
Set if command not available in current mode (see Table 507)  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any area of the P-Flash or D-Flash memory is protected  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.11 Verify backdoor access key command  
The Verify Backdoor Access Key command will only execute if it is enabled by the KEYEN bits in the FSEC register (see Table 471). The  
Verify Backdoor Access Key command releases security if user-supplied keys match those stored in the Flash security bytes of the Flash  
configuration field (see Table 463). The Verify Backdoor Access Key command must not be executed from the Flash block containing the  
backdoor comparison key to avoid code runaway.  
Table 531. Verify backdoor access key command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
001  
010  
011  
100  
0x0C  
Not required  
Key 0  
Key 1  
Key 2  
Key 3  
Upon clearing CCIF to launch the Verify Backdoor Access Key command, the Memory Controller will check the FSEC KEYEN bits to verify  
that this command is enabled. If not enabled, the Memory Controller sets the ACCERR bit in the FSTAT register and terminates. If the  
command is enabled, the Memory Controller compares the key provided in FCCOB to the backdoor comparison key in the Flash  
configuration field with Key 0 compared to 0x3_FF00, etc. If the backdoor keys match, security will be released. If the backdoor keys do  
not match, security is not released and all future attempts to execute the Verify Backdoor Access Key command are aborted (set  
ACCERR) until a reset occurs. The CCIF flag is set after the Verify Backdoor Access Key operation has completed.  
Table 532. Verify backdoor access key command Error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 100 at command launch  
Set if an incorrect backdoor key is supplied  
ACCERR  
Set if backdoor key access has not been enabled (KEYEN[1:0]!= 10, see Section 4.25.3.2.2)  
FSTAT  
Set if the backdoor key has mismatched since the last reset  
FPVIOL  
MGSTAT1  
MGSTAT0  
None  
None  
None  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
354/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.4.5.12 Set user margin level command  
The Set User Margin Level command causes the Memory Controller to set the margin level for future read operations of the P-Flash or  
D-Flash block.  
Table 533. Set user margin level command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
001  
0x0D  
Global address [17:16] to identify the Flash block  
Margin level setting  
Upon clearing CCIF to launch the Set User Margin Level command, the Memory Controller will set the user margin level for the targeted  
block and then set the CCIF flag.  
NOTE  
When the D-Flash block is targeted, the D-Flash user margin levels are applied only to the D-Flash  
reads. However, when the P-Flash block is targeted, the P-Flash user margin levels are applied to  
both P-Flash and D-Flash reads. It is not possible to apply user margin levels to the P-Flash block  
only.  
Valid margin level settings for the Set User Margin Level command are defined in Table 534.  
Table 534. Valid set user margin level settings  
CCOB  
Level description  
(CCOBIX=001)  
0x0000  
0x0001  
0x0002  
Return to Normal Level  
(303)  
User Margin-1 Level  
(304)  
User Margin-0 Level  
Notes  
303. Read margin to the erased state  
304. Read margin to the programmed state  
Table 535. Set user margin level command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
Set if command not available in current mode (see Table 507)  
ACCERR  
Set if an invalid global address [17:16] is supplied  
FSTAT  
Set if an invalid margin level setting is supplied  
FPVIOL  
MGSTAT1  
MGSTAT0  
None  
None  
None  
NOTE  
User margin levels can be used to check that Flash memory contents have adequate margin for  
normal level read operations. If unexpected results are encountered when checking Flash memory  
contents at user margin levels, a potential loss of information has been detected.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
355/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.4.5.13 Set field margin level command  
The Set Field Margin Level command, valid in special modes only, causes the Memory Controller to set the margin level specified for  
future read operations of the P-Flash or D-Flash block.  
Table 536. Set field margin level command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
001  
0x0E  
Global address [17:16] to identify the Flash block  
Margin level setting  
Upon clearing CCIF to launch the Set Field Margin Level command, the Memory Controller will set the field margin level for the targeted  
block and then set the CCIF flag.  
NOTE  
When the D-Flash block is targeted, the D-Flash field margin levels are applied only to the D-Flash  
reads. However, when the P-Flash block is targeted, the P-Flash field margin levels are applied to  
both P-Flash and D-Flash reads. It is not possible to apply field margin levels to the P-Flash block  
only.  
Valid margin level settings for the Set Field Margin Level command are defined in Table 537.  
Table 537. Valid set field margin level settings  
CCOB  
Level description  
(CCOBIX=001)  
0x0000  
0x0001  
0x0002  
0x0003  
0x0004  
Return to Normal Level  
(305)  
User Margin-1 Level  
(306)  
User Margin-0 Level  
(305)  
Field Margin-1 Level  
(306)  
Field Margin-0 Level  
Notes  
305. Read margin to the erased state  
306. Read margin to the programmed state  
Table 538. Set field margin level command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
Set if command not available in current mode (see Table 507)  
ACCERR  
Set if an invalid global address [17:16] is supplied  
FSTAT  
Set if an invalid margin level setting is supplied  
FPVIOL  
MGSTAT1  
MGSTAT0  
None  
None  
None  
CAUTION  
Field margin levels must only be used during verify of the initial factory programming.  
NOTE  
Field margin levels can be used to check that Flash memory contents have adequate margin for data  
retention at the normal level setting. If unexpected results are encountered when checking Flash  
memory contents at field margin levels, the Flash memory contents should be erased and  
reprogrammed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
356/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.4.5.14 Erase verify D-flash section command  
The Erase Verify D-Flash Section command will verify that a section of code in the D-Flash is erased. The Erase Verify D-Flash Section  
command defines the starting point of the data to be verified and the number of words.  
Table 539. Erase verify D-flash section command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
001  
010  
0x10  
Global address [17:16] to identify the D-Flash block  
Global address [15:0] of the first word to be verified  
Number of words to be verified  
Upon clearing CCIF to launch the Erase Verify D-Flash Section command, the Memory Controller will verify the selected section of D-Flash  
memory is erased. The CCIF flag will set after the Erase Verify D-Flash Section operation has completed.  
Table 540. Erase verify D-flash section command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 010 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:0] is supplied  
ACCERR  
Set if a misaligned word address is supplied (global address [0]!= 0)  
Set if the requested section breaches the end of the D-Flash block  
None  
FSTAT  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the read  
Set if any non-correctable errors have been encountered during the read  
4.25.4.5.15 Program D-flash command  
The Program D-Flash operation programs one to four previously erased words in the D-Flash block. The Program D-Flash operation will  
confirm that the targeted location(s) were successfully programmed upon completion.  
CAUTION  
A Flash word must be in the erased state before being programmed. Cumulative programming of bits  
within a Flash word is not allowed.  
Table 541. Program D-flash command FCCOB requirements  
CCOBIX[2:0]  
FCCOB parameters  
000  
001  
010  
011  
100  
101  
0x11  
Global address [17:16] to identify the D-Flash block  
Global address [15:0] of word to be programmed  
Word 0 program value  
Word 1 program value, if desired  
Word 2 program value, if desired  
Word 3 program value, if desired  
Upon clearing CCIF to launch the Program D-Flash command, the user-supplied words will be transferred to the Memory Controller and  
be programmed if the area is unprotected. The CCOBIX index value at Program D-Flash command launch determines how many words  
will be programmed in the D-Flash block. The CCIF flag is set when the operation has completed.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
357/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 542. Program D-flash command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0] < 010 at command launch  
Set if CCOBIX[2:0] > 101 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:0] is supplied  
ACCERR  
FSTAT  
Set if a misaligned word address is supplied (global address [0]!= 0)  
Set if the requested group of words breaches the end of the D-Flash block  
Set if the selected area of the D-Flash memory is protected  
FPVIOL  
MGSTAT1  
MGSTAT0  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
4.25.4.5.16 Erase D-flash sector command  
The Erase D-Flash Sector operation will erase all addresses in a sector of the D-Flash block.  
Table 543. Erase D-flash sector command FCCOB requirements  
CCOBIX[2:0]  
FCCOB Parameters  
000  
0x12  
Global address [17:16] to identify D-Flash block  
Global address [15:0] anywhere within the sector to be erased.  
See Section 4.25.1.2.2, “D-flash features" for D-Flash sector size.  
001  
Upon clearing CCIF to launch the Erase D-Flash Sector command, the Memory Controller will erase the selected Flash sector and verify  
that it is erased. The CCIF flag will set after the Erase D-Flash Sector operation has completed.  
Table 544. Erase D-flash sector command error handling  
Register  
Error bit  
Error condition  
Set if CCOBIX[2:0]!= 001 at command launch  
Set if command not available in current mode (see Table 507)  
Set if an invalid global address [17:0] is supplied  
ACCERR  
FSTAT  
Set if a misaligned word address is supplied (global address [0]!= 0)  
Set if the selected area of the D-Flash memory is protected  
Set if any errors have been encountered during the verify operation  
Set if any non-correctable errors have been encountered during the verify operation  
FPVIOL  
MGSTAT1  
MGSTAT0  
4.25.4.6 Interrupts  
The Flash module can generate an interrupt when a Flash command operation has completed, or when a Flash command operation has  
detected an ECC fault.  
Table 545. Flash interrupt sources  
Interrupt source  
Interrupt flag  
Local enable  
Global (CCR) Mask  
Flash Command Complete  
CCIF (FSTAT register)  
DFDIF (FERSTAT register)  
SFDIF (FERSTAT register)  
CCIE (FCNFG register)  
DFDIE (FERCNFG register)  
SFDIE (FERCNFG register)  
I Bit  
I Bit  
I Bit  
ECC Double Bit Fault on Flash Read  
ECC Single Bit Fault on Flash Read  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
358/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
NOTE  
Vector addresses and their relative interrupt priority are determined at the MCU level.  
4.25.4.6.1  
Description of flash interrupt operation  
The Flash module uses the CCIF flag in combination with the CCIE interrupt enable bit to generate the Flash command interrupt request.  
The Flash module uses the DFDIF and SFDIF flags in combination with the DFDIE and SFDIE interrupt enable bits to generate the Flash  
error interrupt request. For a detailed description of the register bits involved, refer to Section 4.25.3.2.5, “Flash configuration register  
(FCNFG)", Section 4.25.3.2.6, “Flash error configuration register (FERCNFG)", Section 4.25.3.2.7, “Flash status register (FSTAT)", and  
Section 4.25.3.2.8, “Flash error status register (FERSTAT)".  
The logic used for generating the Flash module interrupts is shown in Figure 113.  
Flash Command Interrupt Request  
Flash Error Interrupt Request  
CCIE  
CCIF  
DFDIE  
DFDIF  
SFDIE  
SFDIF  
Figure 113. Flash module interrupts implementation  
4.25.4.7 Wait mode  
The Flash module is not affected if the MCU enters wait mode. The Flash module can recover the MCU from wait via the CCIF interrupt  
(see Section 4.25.4.6, “Interrupts").  
4.25.4.8 Stop mode  
If a Flash command is active (CCIF = 0) when the MCU requests stop mode, the current Flash operation will be completed before the  
CPU is allowed to enter stop mode.  
4.25.5 Security  
The Flash module provides security information to the MCU. The Flash security state is defined by the SEC bits of the FSEC register (see  
Table 472). During reset, the Flash module initializes the FSEC register using data read from the security byte of the Flash configuration  
field at global address 0x3_FF0F. The security state out of reset can be permanently changed by programming the security byte, assuming  
that the MCU is starting from a mode where the necessary P-Flash erase and program commands are available, and that the upper region  
of the P-Flash is unprotected. If the Flash security byte is successfully programmed, its new value will take affect after the next MCU reset.  
The following subsections describe these security-related subjects:  
Unsecuring the MCU using backdoor key access  
Unsecuring the MCU in special single chip mode using BDM  
Mode and security effects on flash command availability  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
359/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.5.1 Unsecuring the MCU using backdoor key access  
The MCU may be unsecured by using the backdoor key access feature, which requires knowledge of the contents of the backdoor keys  
(four 16-bit words programmed at addresses 0x3_FF00-0x3_FF07). If the KEYEN[1:0] bits are in the enabled state (see  
Section 4.25.3.2.2, “Flash security register (FSEC)"), the Verify Backdoor Access Key command (see Section 4.25.4.5.11, “Verify  
backdoor access key command") allows the user to present four prospective keys for comparison to the keys stored in the Flash memory  
via the Memory Controller. If the keys presented in the Verify Backdoor Access Key command match the backdoor keys stored in the Flash  
memory, the SEC bits in the FSEC register (see Table 472) will be changed to unsecure the MCU. Key values of 0x0000 and 0xFFFF are  
not permitted as backdoor keys. While the Verify Backdoor Access Key command is active, P-Flash memory, and D-Flash memory will  
not be available for read access and will return invalid data.  
The user code stored in the P-Flash memory must have a method of receiving the backdoor keys from an external stimulus. This external  
stimulus would typically be through one of the on-chip serial ports.  
If the KEYEN[1:0] bits are in the enabled state (see Section 4.25.3.2.2, “Flash security register (FSEC)"), the MCU can be unsecured by  
the backdoor key access sequence described below:  
1. Follow the command sequence for the Verify Backdoor Access Key command as explained in Section 4.25.4.5.11, “Verify  
backdoor access key command"  
2. If the Verify Backdoor Access Key command is successful, the MCU is unsecured and the SEC[1:0] bits in the FSEC register are  
forced to the unsecure state of 10  
The Verify Backdoor Access Key command is monitored by the Memory Controller and an illegal key will prohibit future use of the Verify  
Backdoor Access Key command. A reset of the MCU is the only method to re-enable the Verify Backdoor Access Key command. The  
security as defined in the Flash security byte (0x3_FF0F) is not changed by using the Verify Backdoor Access Key command sequence.  
The backdoor keys stored in addresses 0x3_FF00-0x3_FF07 are unaffected by the Verify Backdoor Access Key command sequence.  
The Verify Backdoor Access Key command sequence has no effect on the program and erase protections defined in the Flash protection  
register, FPROT.  
After the backdoor keys have been correctly matched, the MCU will be unsecured. After the MCU is unsecured, the sector containing the  
Flash security byte can be erased and the Flash security byte can be reprogrammed to the unsecure state, if desired. In the unsecure  
state, the user has full control of the contents of the backdoor keys by programming addresses 0x3_FF00-0x3_FF07 in the Flash  
configuration field.  
4.25.5.2 Unsecuring the MCU in special single chip mode using BDM  
A secured MCU can be unsecured in special single chip mode by using the following method to erase the P-Flash and D-Flash memory:  
1. Reset the MCU into special single chip mode  
2. Delay while the BDM executes the Erase Verify All Blocks command write sequence to check if the P-Flash and D-Flash  
memories are erased  
3. Send BDM commands to disable protection in the P-Flash and D-Flash memory  
4. Execute the Erase All Blocks command write sequence to erase the P-Flash and D-Flash memory  
5. After the CCIF flag sets to indicate that the Erase All Blocks operation has completed, reset the MCU into special single chip  
mode  
6. Delay while the BDM executes the Erase Verify All Blocks command write sequence to verify that the P-Flash and D-Flash  
memory are erased  
If the P-Flash and D-Flash memory are verified as erased, the MCU will be unsecured. All BDM commands will now be enabled and the  
Flash security byte may be programmed to the unsecure state by continuing with the following steps:  
7. Send BDM commands to execute the Program P-Flash command write sequence to program the Flash security byte to the  
unsecured state  
8. Reset the MCU  
4.25.5.3 Mode and security effects on flash command availability  
The availability of Flash module commands depends on the MCU operating mode and security state as shown in Table 507.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
360/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.25.6 Initialization  
On each system reset the Flash module executes a reset sequence which establishes initial values for the Flash Block Configuration  
Parameters, the FPROT and DFPROT protection registers, and the FOPT and FSEC registers. The Flash module reverts to using built-in  
default values that leave the module in a fully protected and secured state if errors are encountered during execution of the reset  
sequence. If a double bit fault is detected during the reset sequence, both MGSTAT bits in the FSTAT register will be set.  
CCIF remains clear throughout the reset sequence. The Flash module holds off all CPU access for the initial portion of the reset sequence.  
While Flash memory reads and access to most Flash registers are possible when the hold is removed, writes to the FCCOBIX, FCCOBHI,  
and FCCOBLO registers are ignored. Completion of the reset sequence is marked by setting CCIF high which enables writes to the  
FCCOBIX, FCCOBHI, and FCCOBLO registers to launch any available Flash command.  
If a reset occurs while any Flash command is in progress, that command will be immediately aborted. The state of the word being  
programmed or the sector/block being erased is not guaranteed.  
4.26 MCU - die-to-die initiator (9S12I128PIMV1)  
4.26.0.1 Acronyms and abbreviations  
Table 546 contains sample acronyms and abbreviations used in this document.  
Table 546. Acronyms and abbreviated terms  
Term  
Meaning  
D2D  
Die-to-Die  
4.26.0.1.1  
Glossary  
Table 313 shows a glossary of the major terms used in this document.  
Table 547. Glossary  
Term  
Definition  
Active low  
Active high  
Asserted  
Customer  
EOT  
The signal is asserted when it changes to logic-level zero.  
The signal is asserted when it changes to logic-level one.  
Discrete signal is in active logic state.  
The end user of an SoC design or device.  
End of Transaction  
Negated  
Pin  
A discrete signal is in inactive logic state.  
External physical connection.  
Revision  
Signal  
Revised or new version of a document. Revisions produce versions; there can be no ‘Rev 0.0.’  
Electronic construct whose state or change in state conveys information.  
Transfer  
Transaction  
Version  
A read or write on the CPU bus following the IP-Bus protocol.  
Command, address and if required data sent on the D2D interface. A transaction is finished by the EOT acknowledge cycle.  
Particular form or variation of an earlier or original document.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
361/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.1 Introduction  
This section describes the functionality of the die-to-die (9S12I128PIMV1) initiator block especially designed for low cost connections  
between a microcontroller die (Interface Initiator) and an analog die (Interface Target) located in the same package.  
The D2DI block  
realizes the initiator part of the D2D interface, including supervision and error interrupt generation  
generates the clock for this interface  
disables/enables the interrupt from the D2D interface  
4.26.1.1 Overview  
The D2DI is the initiator for a data transfer to and from a target, typically located on another die in the same package. It provides a set of  
configuration registers and two memory mapped 256 Byte address windows. When writing to a window a transaction is initiated, sending  
a write command followed, by an 8-bit address and the data byte or word to the target. When reading from a window, a transaction is  
initiated, sending a read command, followed by an 8-bit address to the target. The target then responds with the data. The basic idea is  
that a peripheral located on another die, can be addressed like an on-chip peripheral, except for a small transaction delay.  
D2DCW  
Address Bus  
Write Data Bus  
Read Data Bus  
D2DDAT[7:0]  
D2DINT  
D2DIF  
D2DINTI  
D2DERR_INT  
D2DIE  
xfr_wait  
D2DCLKDIV  
/n  
Bus Clock  
D2DCLK  
n=1 … 8  
Figure 114. Die-to-die initiator (D2DI) block diagram  
4.26.1.2 Features  
The main features of this block are  
Software transparent, memory mapped access to peripherals on target die  
256 Byte address window  
Supports blocking read or write as well as non-blocking write transactions  
Scalable interface clock divide by 1, 2, 3 and 4 of bus clock  
Clock halt on system STOP  
Configurable for 4- or 8-bit wide transfers  
Configurable timeout period  
Non-maskable interrupt on transaction errors  
Transaction Status and Error Flags  
Interrupt enable for receiving interrupt (from D2D target)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
362/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.1.3 Modes of operation  
4.26.1.3.1  
D2DI in STOP/WAIT mode  
The D2DI stops working in STOP/WAIT mode. The D2DCLK signal as well as the data signals used are driven low (only after the end of  
the current high phase, as defined by D2DCLKDIV).  
Waking from STOP/WAIT mode, the D2DCLK line starts clocking again and the data lines will be driven low until the first transaction starts.  
STOP and WAIT mode are entered by different CPU instructions. In the WAIT mode the behavior of the D2DI can be configured  
(D2DSWAI). Every (enabled) interrupt can be used to leave the STOP and WAIT mode.  
4.26.1.3.2  
D2DI in special modes  
The MCU can enter a special mode (used for test and debugging purposes as well as programming the FLASH). In the D2DI, the  
“write-once” feature is disabled. See the MCU description for details.  
4.26.2 External signal description  
The D2DI optionally uses 6 or 10 port pins. The functions of those pins depends on the settings in the D2DCTL0 register, when the D2DI  
module is enabled.  
4.26.2.1 D2DCLK  
When the D2DI is enabled, this pin is the clock output. This signal is low if the initiator is disabled, in STOP mode or in WAIT mode (with  
D2DSWAI asserted), otherwise it is a continuos clock. This pin may be shared with general purpose functionality if the D2DI is disabled.  
4.26.2.2 D2DDAT[7:4]  
When the D2DI is enabled and the interface connection width D2DCW is set to be 8-bit wide, those lines carry the data bits 7:4 acting as  
outputs or inputs. When they act as inputs pull-down elements are enabled. If the D2DI is disabled or if the interface connection width is  
set as 4-bit wide, the pins may be shared with general purpose pin functionality.  
4.26.2.3 D2DDAT[3:0]  
When the D2DI is enabled those lines carry the data bits 3:0 acting as outputs or inputs. When they act as inputs pull-down elements are  
enabled. If the D2DI is disabled the pins and may be shared with general purpose pin functionality.  
4.26.2.4 D2DINT  
The D2DINT is an active input interrupt input driven by the target device. The pin has an active pull-down device. If the D2DI is disabled,  
the pin may be shared with general purpose pin functionality.  
Table 548. Signal properties  
Secondary  
Name  
Primary (D2DEN=1)  
I/O  
Reset  
Comment  
Pull down  
(D2DEN=0)  
(307)  
D2DDAT[7:0]  
D2DCLK  
Bidirectional Data Lines  
Interface Clock Signal  
Active High Interrupt  
I/O GPIO  
0
0
driven low if in STOP mode  
low if in STOP mode  
Active  
O
I
GPIO  
GPIO  
(308)  
D2DINT  
Active  
Notes  
307. Active if in input state, only if D2DEN=1  
308. only if D2DEN=1  
See the port interface module (PIM) guide for details of the GPIO function.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
363/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.3 Memory map and register definition  
4.26.3.1 Memory map  
The D2DI memory map is split into three sections.  
1. An eight byte set of control registers  
2. A 256 byte window for blocking transactions  
3. A 256 byte window for non-blocking transactions  
See the chapter “Device Memory Map” for the register layout (distribution of these sections).  
D2DREGS  
8 Byte Control  
Registers  
D2DBLK  
256 Byte Window  
Blocking Access  
D2DNBLK  
256 Byte Window  
Non-blocking Write  
Figure 115. D2DI top level memory map  
A summary of the registers associated with the D2DI block is shown in Table 549. Detailed descriptions of the registers and bits are given  
in the subsections that follow.  
Table 549. D2DI register summary  
Offset  
Register name  
Bit 7  
6
D2DCW  
0
5
D2DSWAI  
0
4
3
2
1
Bit 0  
0x0  
R
0
0
0
D2DCTL0  
D2DEN  
D2DCLKDIV[1:0]  
W
0x1  
0x2  
0x3  
0x4  
0x5  
0x6  
0x7  
D2DCTL1  
0
D2DIE  
ERRIF  
TIMEOUT[3:0]  
R
ACKERF  
D2DBSY  
SZ8  
CNCLF  
TIMEF  
0
TERRF  
PARF  
PAR1  
PAR0  
D2DSTAT0  
D2DSTAT1  
W
0
0
0
0
0
0
0
0
D2DIF  
RWB  
R
W
R
NBLK  
0
0
D2DADRHI  
D2DADRLO  
D2DDATAHI  
D2DDATALO  
ADR[7:0]  
W
R
DATA[15:8]  
DATA[7:0]  
W
R
W
= Unimplemented or Reserved  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
364/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.3.2 Register definition  
4.26.3.3 D2DI control register 0 (D2DCTL0)  
This register is used to enable and configure the interface width, the wait behavior and the frequency of the interface clock.  
Table 550. D2DI control register 0 (D2DCTL0)  
Offset  
Access: User read/write  
1 0  
0x0  
7
D2DEN  
0
6
D2DCW  
0
5
D2DSWAI  
0
4
0
3
0
2
0
R
D2DCLKDIV[1:0]  
W
Reset  
0
0
0
0
0
Table 551. D2DCTL0 register field descriptions  
Field  
Description  
D2DI Enable — Enables the D2DI module. This bit is write-once in normal mode and can always be written in special modes.  
7
0
1
D2DI initiator is disabled. No lines are not used, the pins have their GPIO (secondary) function.  
D2DI initiator is enabled. After setting D2DEN=1 the D2DDAT[7:0] (or [3:0], see D2DCW) lines are driven low with the IDLE command;  
the D2DCLK is driven by the divided bus clock.  
D2DEN  
D2D Connection Width — Sets the number of data lines used by the interface. This bit is write-once in normal modes and can always  
be written in special modes.  
6
0
1
Lines D2DDAT[3:0] are used for four line data transfer. D2DDAT[7:4] are unused.  
All eight interface lines D2DDAT[7:0] are used for data transfer.  
D2DCW  
D2D Stop In Wait — Controls the WAIT behavior. This bit can be written at any time.  
5
0
1
Interface clock continues to run if the CPU enters WAIT mode  
Interface clock stops if the CPU enters WAIT mode.  
D2DSWAI  
4:2  
Reserved, should be written to 0 to ensure compatibility with future versions of this interface.  
Interface Clock Divider — Determines the frequency of the interface clock. These bits are write-once in normal modes and can be  
always written in special modes. See Figure 116 for details on the clock waveforms  
00 Encoding 0. Bus clock divide by 1.  
01 Encoding 1. Bus clock divide by 2.  
10 Encoding 2. Bus clock divide by 3.  
11 Encoding 3. Bus clock divide by 4.  
1:0  
D2DCLKDIV  
The Clock Divider will provide the waveforms as shown in Figure 116. The duty cycle of the clock is not always 50%, the high cycle is  
shorter than 50% or equal but never longer, since this is beneficial for the transaction speed.  
bus clock  
00  
01  
10  
11  
Figure 116. Interface clock waveforms for various D2DCLKDIV encoding  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
365/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.3.4 D2DI control register 1 (D2DCTL1)  
This register is used to enable the D2DI interrupt and set number of D2DCLK cycles before a timeout error is asserted.  
Table 552. D2DI control register 1 (D2DCTL1)  
Offset  
Access: User read/write  
0
0x1  
7
D2DIE  
0
6
0
5
0
4
0
3
0
2
0
1
0
R
TIMOUT[3:0]  
W
Reset  
0
0
0
0
Table 553. D2DCTL1 register field descriptions  
Field  
Description  
D2D Interrupt Enable — Enables the external interrupt  
7
0
1
External Interrupt is disabled  
External Interrupt is enabled  
D2DIE  
6:4  
Reserved, should be written to 0 to ensure compatibility with future versions of this interface.  
Time-out Setting — Defines the number of D2DCLK cycles to wait after the last transaction cycle until a timeout is asserted. In case of a  
timeout the TIMEF flag in the D2DSTAT0 register will be set.  
These bits are write-once in normal modes and can always be written in special modes.  
0000 The acknowledge is expected directly after the last transfer, i.e. the target must not insert a wait cycle.  
0001 - 1111: The target may insert up to TIMOUT wait states before acknowledging a transaction until a timeout is asserted  
3:0  
TIMOUT  
NOTE  
“Write-once” means that after writing D2DCNTL0.D2DEN=1 the write accesses to these bits have no  
effect.  
4.26.3.5 D2DI status register 0 (D2DSTAT0)  
This register reflects the status of the D2DI transactions.  
Table 554. D2DI status register 0 (D2DSTAT0)  
Offset  
Access: User read/write  
1 0  
0x2  
7
ERRIF  
0
6
5
4
3
2
R
ACKERF  
CNCLF  
TIMEF  
TERRF  
PARF  
PAR1  
PAR0  
W
Reset  
0
0
0
0
0
0
0
Table 555. D2DI status register 0 field descriptions  
Field  
Description  
D2DI error interrupt flag — This status bit indicates that the D2D initiator has detected an error condition (summary of the following five  
flags).This interrupt is not locally maskable. Write a 1 to clear the flag. Writing a 0 has no effect.  
7
0
1
D2DI has not detected an error during a transaction.  
D2DI has detected an error during a transaction.  
ERRIF  
6
Acknowledge Error Flag— This read-only flag indicates that in the acknowledge cycle not all data inputs are sampled high, indicating a  
potential broken wire. This flag is cleared when the ERRIF bit is cleared by writing a 1 to the ERRIF bit.  
ACKERF  
5
CNCLF — This read-only flag indicates the initiator has canceled a transaction and replaced it by an IDLE command due to a pending error  
flag (ERRIF). This flag is cleared when the ERRIF bit is cleared by writing a 1 to the ERRIF bit.  
CNCLF  
4
Time Out Error Flag — This read-only flag indicates the initiator has detected a time-out error. This flag is cleared when the ERRIF bit is  
cleared by writing a 1 to the ERRIF bit.  
TIMEF  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
366/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 555. D2DI status register 0 field descriptions (continued)  
Field  
Description  
3
Transaction Error Flag — This read-only flag indicates the initiator has detected the error signal during the acknowledge cycle of the  
transaction. This flag is cleared when the ERRIF bit is cleared by writing a 1 to the ERRIF bit.  
TERRF  
2
Parity Error Flag — This read-only flag indicates the initiator has detected a parity error. Parity bits[1:0] contain further information. This flag  
is cleared when the ERRIF bit is cleared by writing a 1 to the ERRIF bit.  
PARF  
1
Parity Bit — P[1] as received by the D2DI  
Parity Bit — P[0] as received by the D2DI  
PAR1  
0
PAR0  
4.26.3.6 D2DI status register 1 (D2DSTAT1)  
This register holds the status of the external interrupt pin and an indicator about the D2DI transaction status.  
Table 556. D2DI status register 1 (D2DSTAT1)  
Offset  
Access: User read  
0x3  
7
D2DIF  
0
6
5
0
4
0
3
0
2
0
1
0
0
0
R
D2DBSY  
W
Reset  
0
0
0
0
0
0
0
Table 557. D2DSTAT1 register field descriptions  
Field  
Description  
D2D Interrupt Flag — This read-only flag reflects the status of the D2DINT Pin. The D2D interrupt flag can only be cleared by a target specific  
interrupt acknowledge sequence.  
7
0
1
External Interrupt is negated  
External Interrupt is asserted  
D2DIF  
D2D Initiator Busy — This read-only status bit indicates that a D2D transaction is ongoing.  
6
0
1
D2D initiator idle.  
D2D initiator transaction ongoing.  
D2DBSY  
5:0  
Reserved, should be masked to ensure compatibility with future versions of this interface.  
4.26.3.7 D2DI address buffer register (D2DADR)  
This read-only register contains information about the ongoing D2D interface transaction. The register content will be updated when a new  
transaction starts. In error cases the user can track back, which transaction failed.  
Table 558. D2DI address buffer register (D2DADR)  
Offset  
Access: User read  
0x4/0x5  
15  
14  
13  
0
12  
11  
0
10  
0
9
0
8
0
7
0
6
0
5
0
4
3
2
0
1
0
0
0
R
RWB  
SZ8  
NBLK  
ADR[7:0]  
W
0
0
0
0
0
0
0
0
0
0
Reset  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
367/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 559. D2DI address buffer register bit descriptions  
Field  
Description  
Transaction Read-Write Direction — This read-only bit reflects the direction of the transaction  
15  
RWB  
0
1
Write Transaction  
Read Transaction  
Transaction Size — This read-only bit reflects the data size of the transaction  
14  
SZ8  
0
1
16-bit transaction.  
8-bit transaction.  
13  
Reserved, should be masked to ensure compatibility with future versions of this interface.  
Transaction Mode — This read-only bit reflects the mode of the transaction  
12  
NBLK  
0
1
Blocking transaction.  
Non-blocking transaction.  
11:8  
Reserved, should be masked to ensure compatibility with future versions of this interface.  
7:0  
ADR[7:0]  
Transaction Address — Those read-only bits contain the address of the transaction  
4.26.3.8 D2DI data buffer register (D2DDATA)  
This read-only register contains information about the ongoing D2D interface transaction. For a write transaction, the data becomes valid  
at the begin of the transaction. For a read transaction, the data will be updated during the transaction and is finalized when the transaction  
is acknowledged by the target. In error cases, the user can track back what has happened.  
Table 560. D2DI data buffer register (D2DDATA)  
Offset  
Access: User read  
0x6/0x7  
15  
14  
0
13  
0
12  
0
11  
0
10  
0
9
0
8
7
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R
DATA15:0  
W
0
0
0
Reset  
Table 561. D2DI data buffer register bit descriptions  
Field  
Description  
15:0  
DATA  
Transaction Data — Those read-only bits contain the data of the transaction  
Both D2DDATA and D2DADR can be read with byte accesses.  
4.26.4 Functional description  
4.26.4.1 Initialization  
Out of reset the interface is disabled. The interface must be initialized by setting the interface clock speed, the timeout value, the transfer  
width and finally enabling the interface. This should be done using a 16-bit write or if using 8-bit write D2DCTL1 must be written before  
D2D2CTL0.D2DEN=1 is written. Once it is enabled in normal modes, only a reset can disable it again (write-once feature).  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
368/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.4.2 Transactions  
A transaction on the D2D Interface is triggered by writing to either the 256 byte address window or reading from the address window (see  
STAA/LDAA 0/1 in the next figure). Depending on which address window is used, a blocking or a non-blocking transaction is performed.  
The address for the transaction is the 8-bit wide window relative address. The data width of the CPU read or write instructions determines  
if 8-bit or 16-bit wide data are transferred. There is always only one transaction active. Figure 117 shows the various types of transactions  
explained in more detail below.  
For all 16-bit read/write accesses of the CPU the addresses are assigned according the big-endian model:  
word [15:8]: addr  
word[7:0]: addr+1  
addr: byte-address (8 bit wide) inside the blocking or non-blocking window, as provided by the CPU and transferred to the D2D target  
word: CPU data, to be transferred from/to the D2D target  
The application must care for the stretched CPU cycles (limited by the TIMOUT value, caused by blocking or consecutive accesses), which  
could affect time limits, including COP (computer operates properly) supervision. The stretched CPU cycles cause the “CPU halted”  
phases (see Figure 117).  
CPU activity  
D2D activity  
STAA 0  
CPU Halted  
LDAA # STAA 1  
CPU Halted  
NOP  
Blocking  
Write  
Write Transaction 0  
Write Transaction 1  
CPU activity  
CPU  
STAA 0 LDAA # STAA 1  
NOP  
Write Transaction 1  
Halted  
Non-Blocking  
Write  
Write Transaction 0  
D2D activity  
CPU activity  
D2D activity  
STAA  
MEM  
LDAA 0  
CPU Halted  
Transaction 0  
LDAA 1  
CPU Halted  
NOP  
Blocking  
Read  
Transaction 1  
Figure 117. Blocking and non-blocking transfers.  
4.26.4.2.1  
Blocking writes  
When writing to the address window associated with blocking transactions, the CPU is held until the transaction is completed, before  
completing the instruction. Figure 117 shows the behavior of the CPU for a blocking write transaction shown in the following example.  
STAA  
LDAA  
STAA  
NOP  
BLK_WINDOW+OFFS0; WRITE0 8-bit as a blocking transaction  
#BYTE1  
BLK_WINDOW+OFFS1 ; WRITE1 is executed after WRITE0 transaction is completed  
Blocking writes should be used when clearing interrupt flags, located in the target or other writes which require that the operation at the  
target, is completed before proceeding with the CPU instruction stream.  
4.26.4.3 Non-blocking writes  
When writing to the address window associated with non-blocking transactions, the CPU can continue before the transaction is completed.  
However, if there was an ongoing transaction when doing the 2nd write, the CPU is held until the first one is completed, and before  
executing the 2nd one. Figure 117 shows the behavior of the CPU for a blocking write transaction shown in the following example.  
STAA  
LDAA  
STAA  
NOP  
NONBLK_WINDOW+OFFS0; write 8-bit as a blocking transaction  
#BYTE1 ; load next byte  
NONBLK_WINDOW+OFFS1; executed right after the first  
As the figure illustrates, non-blocking writes have a performance advantage, but care must be taken that the following instructions are not  
affected by the change in the target caused by the previous transaction.  
4.26.4.4 Blocking read  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
369/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
When reading from the address window associated with blocking transactions, the CPU is held until the data is returned from the target,  
before completing the instruction. Figure 117 shows the behavior of the CPU for a blocking read transaction shown in the following  
example.  
LDAA  
STAA  
LDAA  
BLK_WINDOW+OFFS0; Read 8-bit as a blocking transaction  
MEM ; Store result to local Memory  
BLK_WINDOW+OFFS1; Read 8-bit as a blocking transaction  
4.26.4.5 Non-blocking read  
Read access to the non-blocking window is reserved for future use. When reading from the address window associated with non-blocking  
writes, the read returns an all 0s data byte or word. This behavior can change in future revisions.  
4.26.4.6 Transfer width  
8-bit wide writes or reads are translated into 8-bit wide interface transactions. 16-bit wide, aligned writes or reads are translated into a16-bit  
wide interface transactions. 16-bit wide, misaligned writes or reads are split up into two consecutive 8-bit transactions with the transaction  
on the odd address first followed by the transaction on the next higher even address. Due to the much more complex error handling (by  
the MCU), misaligned 16-bit transfers should be avoided.  
4.26.4.7 Error conditions and handling faults  
Since the S12 CPU (as well as the S08) does not provide a method to abort a transfer once started, the D2DI asserts a D2DERRINT. The  
ERRIF Flag is set in the D2DSTAT0 register. Depending on the error condition, further error flags will be set, as described below. The  
content of the address and data buffers are frozen and all transactions will be replaced by an IDLE command, until the error flag is cleared.  
If an error is detected during the read transaction of a read-modify-write instruction, or a non-blocking write transaction was followed by  
another write or read transaction, the second transaction is cancelled. The CNCLF is set in the D2DSTAT0 register to indicate that a  
transaction has been cancelled. The D2DERRINT handler can read the address and data buffer register to assess the error situation. Any  
further transaction will be replaced by IDLE until the ERRIF is cleared.  
4.26.4.7.1  
Missing acknowledge  
If the target detects a wrong command, it will not send back an acknowledge. The same situation occurs if the acknowledge is corrupted.  
The D2DI detects this missing acknowledge after the timeout period configured in the TIMOUT parameter of the D2DCTL1 register. In  
case of a timeout, the ERRIF and the TIMEF flags in the D2DSTAT0 register will be set.  
4.26.4.7.2  
Parity error  
In the final acknowledge cycle of a transaction, the target sends two parity bits. If this parity does not match the parity calculated by the  
initiator, the ERRIF and the PARF flags in the D2DSTAT0 register will be set. The PAR[1:0] bits contain the parity value received by the  
D2DI.  
4.26.4.7.3  
Error signal  
During the acknowledge cycle the target can signal a target specific error condition. If the D2DI finds the error signal asserted during a  
transaction, the ERRIF and the TERRF flags in the D2DSTAT0 register will be set.  
4.26.4.8 Low power mode options  
4.26.4.8.1  
D2DI in run mode  
In run mode, with the D2D Interface enable (D2DEN) bit in the D2D control register 0 clear, the D2DI system is in a low-power, disabled  
state. D2D registers remain accessible, but clocks to the core of this module are disabled. On D2D lines the GPIO function is activated.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
370/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.4.8.2  
D2DI in wait mode  
D2DI operation in wait mode depends upon the state of the D2DSWAI bit in D2D control register 0.  
If D2DSWAI is clear, the D2DI operates normally when the CPU is in the wait mode  
If D2DSWAI is set and the CPU enters the wait mode, any pending transmission is completed. When the D2DCLK output is  
driven low then the clock generation is stopped, all internal clocks to the D2DI module are stopped as well and the module enters  
a power saving state.  
4.26.4.8.3  
D2DI in stop mode  
If the CPU enters the STOP mode, the D2DI shows the same behavior as for the wait mode with an activated D2DSWAI bit.  
4.26.4.8.4  
Reset  
In case of reset any transaction is immediately stopped and the D2DI module is disabled.  
4.26.4.8.5  
Interrupts  
The D2DI only originates interrupt requests when D2DI is enabled (D2DIE bit in D2DCTL0 set). There are two different interrupt requests  
from the D2D module. The interrupt vector offset and interrupt priority are chip dependent.  
4.26.4.8.5.1 D2D external interrupt  
This is a level sensitive active high external interrupt driven by the D2DINT input. This interrupt is enabled if the D2DIE bit in the D2DCTL1  
register is set. The interrupt must be cleared using an target specific clearing sequence. The status of the D2D input pin can be observed  
by reading the D2DIF bit in the D2DSTAT1 register.  
The D2DINIT signal is also asserted in the wait and stop mode; it can be used to leave these modes.  
To read data bus (D2DSTAT1.D2DIF)  
D2DINTI  
D2DINT  
D2DIE  
Figure 118. D2D external interrupt scheme  
4.26.4.8.5.2 D2D error interrupt  
Those D2D interface specific interrupts are level sensitive and are all cleared by writing a 1 to the ERRIF flag in the D2DSTAT0 register.  
This interrupt is not locally maskable and should be tied to the highest possible interrupt level in the system, on an S12 architecture to the  
XIRQ. See the chapter “Vectors” of the MCU description for details.  
ACKERF  
CNCLF  
ERRIF  
1
TIMEF  
TERRF  
PARF  
D2DERRINT  
D2DEN  
Figure 119. D2D internal interrupts  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
371/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
4.26.5 Initialization information  
During initialization, the transfer width, clock divider, and timeout value must be set according to the capabilities of the target device before  
starting any transaction. See the D2D Target specification for details.  
4.26.6 Application information  
4.26.6.1 Entering low-power mode  
The D2DI module is typically used on a microcontroller along with an analog companion device containing the D2D target interface and  
supplying the power. Interface specification does not provide special wires for signalling low power modes to the target device. The CPU  
should determine when it is time to enter one of the above power modes.The basic flow is as follows:  
1. CPU determines there is no more work pending.  
2. CPU writes a byte to a register on the analog die using blocking write configuring which mode to enter.  
3. Analog die acknowledges that write sending back an acknowledge symbol on the interface.  
4. CPU executes WAIT or STOP command.  
5. Analog die can enter low power mode - (S12 needs some more cycles to stack data!)  
; Example shows S12 code  
SEI  
; disable interrupts during test  
; check is there is work pending?  
; if yes, branch off and re-enable interrupt  
; else  
LDAA  
STAA  
CLI  
#STOP_ENTRY  
MODE_REG  
; re-enable right before the STOP instruction  
; stack and turn off all clocks inc. interface clock  
; store to the analog die mode reg (use blocking write here)  
STOP  
For wake-up from STOP the basic flow is as follows:  
1. Analog die detects a wake-up condition e.g. on a switch input or start bit of a LIN message.  
2. Analog die exits Voltage Regulator low power mode.  
3. Analog die asserts the interrupt signal D2DINT.  
4. CPU starts clock generation.  
5. CPU enters interrupt handler routine.  
6. CPU services interrupt and acknowledges the source on the analog die.  
NOTE  
Entering STOP mode or WAIT mode with D2DSWAI asserted, the clock will complete the high duty  
cycle portion and settle at a low level.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
372/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5
MM912_637 - trimming  
5.1  
Introduction  
To ensure the high precision requirements over a wide temperature and lifetime range, the MM912_637 uses several trimming and  
calibration techniques. Due to the advantage of the FLASH technology available in the microcontroller die, several factory trimmed values  
can be used to increase the overall device accuracy.  
Trimming will use factory measured and calculated values stored in the microcontroller IFR (Information Register) to be loaded into  
specific registers in the MCU and analog die at system power up.  
Calibration would be done during operation of the system using internal references or specific measurement procedures. As calibration  
is an essential part of the signal acquisition, see Section 4.8.5, “Calibration" as part of Section 4.8, “Channel acquisition".  
NOTE  
The MM912_637 trimming is primarily used to achieve the specified analog die parameters. The only  
valid trimming of the MCU die, the Internal Oscillator Trimming (ICG) will be automatically stored into  
the MCU trimming register during power up. See Section 4.23.3.2.15, “9S12I128PIMV1 IRC1M trim  
registers (CPMUIRCTRIMH / CPMUIRCTRIML)".  
5.2  
IFR trimming content and location  
All device trimming information are stored in the MCU Information Register (IFR) located at the following address. See also Section 4.25,  
“128 kByte flash module (S12FTMRC128K1V1)".  
Table 562. IFR location  
Global address  
Size (bytes)  
Field description  
0x01_8000 - 0x01_8007  
0x01_8008 - 0x01_80B5  
0x01_80B6 - 0x01_80B7  
0x01_80B8 - 0x01_80BF  
0x01_80C0 - 0x01_80FF  
8
174  
2
Unique Device ID  
Reserved  
(309)  
Version ID  
8
Reserved  
64  
Analog Die Trimming Information (Program Once Field)  
Notes  
309. Used to track firmware patch versions, see Section 4.25.4.2, “IFR version ID word".  
NOTE  
The Program Once reserved field can be read using the Read Once command as described in  
Section 4.25.4.5.4, “Read once command".  
5.2.1  
IFR - trimming content for analog die functionality  
The following table shows the details of the 64 byte (0x01_80C0 - 0x01_80FF) Program Once Field Content used to store the Analog Die  
Trimming Information. Refer to Section 4.25.4.5.4, “Read once command", for access instructions.  
Table 563. Analog die trimming information  
OFFSET  
Byte description  
Target register  
Name  
Global  
address  
HEX  
DEC  
00  
7
6
5
4
3
2
1
0
Offset  
0x01_80C0  
0x01_80C1  
0x01_80C2  
0x01_80C3  
00  
01  
02  
03  
IGC4[9:8]  
COMP_IG4 (hi)  
0xB0  
01  
IGC4[7:0]  
IGC8[7:0]  
COMP_IG4 (lo)  
COMP_IG8 (hi)  
COMP_IG8 (lo)  
02  
IGC8[9:8]  
0xB2  
03  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
373/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 563. Analog die trimming information (continued)  
OFFSET  
HEX  
Byte description  
Target register  
Global  
address  
DEC  
04  
05  
06  
07  
08  
09  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
7
6
5
4
3
2
1
0
Name  
COMP_IG16 (hi)  
COMP_IG16 (lo)  
COMP_IG32 (hi)  
COMP_IG32 (lo)  
COMP_IG64 (hi)  
COMP_IG64 (lo)  
COMP_IG128 (hi)  
COMP_IG128 (lo)  
COMP_IG256 (hi)  
COMP_IG256 (lo)  
COMP_IG512 (hi)  
COMP_IG512 (lo)  
TRIM_BG0 (hi)  
Offset  
0x01_80C4  
0x01_80C5  
0x01_80C6  
0x01_80C7  
0x01_80C8  
0x01_80C9  
0x01_80CA  
0x01_80CB  
0x01_80CC  
0x01_80CD  
0x01_80CE  
0x01_80CF  
0x01_80D0  
0x01_80D1  
0x01_80D2  
0x01_80D3  
0x01_80D4  
0x01_80D5  
0x01_80D6  
0x01_80D7  
0x01_80D8  
0x01_80D9  
0x01_80DA  
0x01_80DB  
0x01_80DC  
0x01_80DD  
0x01_80DE  
0x01_80DF  
0x01_80E0  
0x01_80E1  
0x01_80E2  
0x01_80E3  
0x01_80E4  
0x01_80E5  
0x01_80E6  
0x01_80E7  
04  
05  
06  
07  
08  
09  
0A  
0B  
0C  
0D  
0E  
0F  
10  
11  
IGC16[9:8]  
IGC32[9:8]  
IGC64[9:8]  
IGC128[9:8]  
IGC256[9:8]  
IGC512[9:8]  
0xB4  
IGC16[7:0]  
IGC32[7:0]  
IGC64[7:0]  
IGC128[7:0]  
IGC256[7:0]  
IGC512[7:0]  
0xB6  
0xB8  
0xBA  
0xBC  
0xBE  
TCIBG2[2:0]  
SLPBG[2:0]  
0xE0  
0xE1  
0xE2  
0xE3  
0xE4  
0xE5  
0xE6  
0xE7  
0xE8  
0xE9  
IBG2[2:0]  
IBG1[2:0]  
TCBG1[2:0]  
SLPBG[2:0]  
TRIM_BG0 (lo)  
12  
13  
14  
15  
16  
17  
18  
19  
1A  
1B  
1C  
1D  
1E  
1F  
20  
21  
22  
23  
24  
25  
26  
27  
UBG3 DBG3  
TCBG2[2:0]  
TRIM_BG1 (hi)  
TRIM_BG1 (lo)  
V1P2BG2[3:0]  
V2P5BG2[3:0]  
V1P2BG1[3:0]  
V2P5BG1[3:0]  
TRIM_BG2 (hi)  
TRIM_BG2 (lo)  
LIN  
TRIM_LIN  
LVT  
TRIM_LVT  
LPOSC[12:8]  
LPOSC[7:0]  
TRIM_OSC (hi)  
TRIM_OSC (lo)  
(310)  
VOC_S[7:0]  
VOC_O[7:0]  
COMP_VO  
0xAA  
0xAA  
0xAA  
0xAA  
(310)  
(310)  
(310)  
COMP_VO  
VOC_S_CHOP[7:0] (Chopper Mode)  
VOC_O_CHOP[7:0] (Chopper Mode)  
COMP_VO  
COMP_VO  
VSGC[9:8]  
COMP_VSG (hi)  
COMP_VSG (lo)  
COMP_VOG (hi)  
COMP_VOG (lo)  
COMP_ITO  
(310)  
0xAC  
0xAC  
VSGC[7:0]  
VOGC[9:8]  
(310)  
VOGC[7:0]  
ITO[7:0]  
0xD0  
ITG[7:0]  
COMP_ITG  
0xD1  
n.a.  
n.a.  
n.a.  
n.a.  
GAIN_CAL_VSENSE_ROOM (hi)  
GAIN_CAL_VSENSE_ROOM (lo)  
GAIN_CAL_VOPT_ROOM (hi)  
GAIN_CAL_VOPT_ROOM (lo)  
BG3 diag measurement from Vsense channel after cal at room  
BG3 diag measurement from Vopt channel after cal at room  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
374/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 563. Analog die trimming information (continued)  
OFFSET  
Byte description  
Target register  
Global  
address  
HEX  
DEC  
40  
7
6
5
4
3
2
1
0
Name  
Offset  
n.a.  
0x01_80E8  
0x01_80E9  
0x01_80EA  
0x01_80EB  
28  
29  
2A  
2B  
GAIN_CAL_IG4_ROOM (hi)  
GAIN_CAL_IG4_ROOM (med)  
GAIN_CAL_IG4_ROOM (lo)  
41  
BG3 diag measurement from I channel (gain4) at room  
n.a.  
42  
n.a.  
43  
Reserved  
VSENSE Channel Gain Compensation  
0x01_80EC  
0x01_80ED  
0x01_80EE  
0x01_80EF  
0x01_80F0  
0x01_80F1  
0x01_80F2  
0x01_80F3  
0x01_80F4  
0x01_80F5  
0x01_80F6  
0x01_80F7  
0x01_80F8  
0x01_80F9  
0x01_80FA  
0x01_80FB  
0x01_80FC  
0x01_80FD  
0x01_80FE  
2C  
2D  
2E  
2F  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
3A  
3B  
3C  
3D  
3E  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
COMP_VSG_COLD[7:0]  
COMP_VSG_HOT[7:0]  
COMP_VOG_COLD[7:0]  
COMP_VOG_HOT[7:0]  
IGC4_COLD[7:0]  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
n.a.  
(311)  
- COLD Temp  
VSENSE Channel Gain Compensation  
(311)  
- HOT Temp  
VOPT Channel Gain Compensation -  
(311)  
COLD Temp  
VOPT Channel Gain Compensation -  
(311)  
HOT Temp  
Current Channel Gain (4)  
(311)  
Compensation - COLD Temp  
Current Channel Gain (4)  
IGC4_HOT[7:0]  
(311)  
Compensation - HOT Temp  
Current Channel Gain (8)  
IGC8_COLD[7:0]  
(311)  
Compensation - COLD Temp  
Current Channel Gain (8)  
IGC8_HOT[7:0]  
(311)  
Compensation - HOT Temp  
Current Channel Gain (16)  
IGC16_COLD[7:0]  
IGC16_HOT[7:0]  
(311)  
Compensation - COLD Temp  
Current Channel Gain (16)  
(311)  
Compensation - HOT Temp  
Current Channel Gain (32)  
IGC32_COLD[7:0]  
IGC32_HOT[7:0]  
(311)  
Compensation - COLD Temp  
Current Channel Gain (32)  
(311)  
Compensation - HOT Temp  
Current Channel Gain (64)  
IGC64_COLD[7:0]  
IGC64_HOT[7:0]  
(311)  
Compensation - COLD Temp  
Current Channel Gain (64)  
(311)  
Compensation - HOT Temp  
Current Channel Gain (128)  
IGC128_COLD[7:0]  
IGC128_HOT[7:0]  
IGC256_COLD[7:0]  
IGC256_HOT[7:0]  
IGC512_COLD[7:0]  
(311)  
Compensation - COLD Temp  
Current Channel Gain (128)  
(311)  
Compensation - HOT Temp  
Current Channel Gain (256)  
(311)  
Compensation - COLD Temp  
Current Channel Gain (256)  
(311)  
Compensation - HOT Temp  
Current Channel Gain (512)  
(311)  
Compensation - COLD Temp  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
375/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 563. Analog die trimming information (continued)  
OFFSET  
Byte description  
Target register  
Global  
address  
HEX  
3F  
DEC  
7
6
5
4
3
2
1
0
Name  
Offset  
Current Channel Gain (512)  
Compensation - HOT Temp  
0x01_80FF  
Notes  
63  
IGC512_HOT[7:0]  
n.a.  
(311)  
310. Based on the selection of the voltage measurement source (VSENSE or VOPT) and the activation of chopper mode.  
311. 7 Bit character with bit 7 (MSB) as sign (0 = “+”; 1 = “-”) with the difference to the corresponding room temperature value   
(e.g. 10000010 = “-2”).  
5.2.2  
Analog die trimming overview  
5.2.2.1  
Current channel gain compensation trim (COMP_IG4-COMP_IG512)  
To achieve the specified accuracy of the current acquisition, the optimum trim value is calculated during final test and stored into the MCU  
FLASH memory. On device every power up, the corresponding trim value needs to be copied into the corresponding analog register via  
D2D interface. See Section 4.8, “Channel acquisition" for additional details.  
5.2.2.2  
Bandgap reference trimming (TRIM_BG0-TRIM_BG2)  
To achieve the specified accuracy of the integrated voltage regulators on the analog die, the optimum trim value is calculated during final  
test and stored into the MCU FLASH memory. On device every power up, the corresponding trim value needs to be copied into the desired  
analog register via D2D interface.  
5.2.2.3  
LIN slope control trimming (TRIM_LIN)  
To achieve the specified slope of the LIN output signal, the optimum trim information is determined during final test and stored into the IFR  
register block of the MCU FLASH memory. On device every power up, the corresponding trim value needs to be copied into the desired  
analog register via D2D interface.  
5.2.2.4  
Low voltage threshold trim (TRIM_LVT)  
To achieve the specified low voltage behavior, on device every power up, the corresponding trim value (LVR) needs to be copied into the  
corresponding analog trim register via D2D interface.  
5.2.2.5  
Low power oscillator trimming (TRIM_OSC)  
To achieve the specified accuracy of the analog low power reference frequency (f  
), the optimum trim value is calculated during final  
TOL_A  
test and stored into the IFR register block of the MCU FLASH memory. On device every power up, the corresponding trim value needs to  
be copied into the desired analog register via D2D interface.  
5.2.2.6  
Voltage channel compensation (COMP_VOx, COMP_VSG, COMP_VOG)  
To achieve the specified accuracy of the voltage channels, gain and offset compensation are trimmed during final test and stored into the  
IFR register block of the MCU FLASH memory. The information is used during the calibration procedure described in Section 4.8.5,  
“Calibration".  
5.2.2.7  
Temperature sense module trimming (COMP_ITO, COMP_ITG)  
To achieve the specified accuracy of the internal temperature sense module, the optimum trim information is determined during final test  
at hot / cold temperature and stored into the IFR register block of the MCU FLASH memory. On device every power up, the corresponding  
trim value needs to be copied into the desired analog register via D2D interface.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
376/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5.2.2.8  
Band gap reference - diagnostic measurements (GAIN_CAL_X_X)  
To achieve the specified accuracy of the voltage and current channels, reference measurements are performed during final test and stored  
for different temperatures into the IFR register block of the MCU FLASH memory. The information is used during the calibration procedure  
described in Section 4.8.5, “Calibration".  
5.2.2.9  
Hot/cold gain compensation data (0x01_80EC - 0x01_80FF)  
To achieve the specified accuracy of the voltage and current channels, reference measurements are performed during final test and stored  
for different temperatures into the IFR register block of the MCU FLASH memory. The information is used during the calibration procedure  
described in Section 4.8.5, “Calibration".  
5.3  
Memory map and registers  
Overview  
5.3.1  
This section provides a detailed description of the memory map and registers for the analog die trimming excluding registers used for  
calibration located from offset 0xE0 to 0xEF. Refer to Section 4.8.5, “Calibration" for details on Current channel gain compensation trim  
(COMP_IG4-COMP_IG512), Voltage channel compensation (COMP_VOx, COMP_VSG, COMP_VOG), Temperature sense module  
trimming (COMP_ITO, COMP_ITG), Band gap reference - diagnostic measurements (GAIN_CAL_X_X) and Hot/cold gain compensation  
data (0x01_80EC - 0x01_80FF).  
5.3.2  
Module memory map  
The memory map for the Compensation module is given below in Table 63.  
Table 564. Module memory map  
(312  
Offset  
Name  
7
6
5
4
3
2
1
0
)
TRIM_BG0 (hi)  
Trim bandgap 0  
TRIM_BG0 (lo)  
Trim bandgap 0  
TRIM_BG1 (hi)  
Trim bandgap 1  
TRIM_BG1 (lo)  
Trim bandgap 1  
TRIM_BG2 (hi)  
Trim bandgap 2  
TRIM_BG2 (lo)  
Trim bandgap 2  
TRIM_LIN  
R
W
R
0
0
0xE0  
TCIBG2[2:0]  
TCIBG1[2:0]  
0
0
0xE1  
0xE2  
0xE3  
0xE4  
0xE5  
0xE6  
0xE7  
IBG2[2:0]  
IBG1[2:0]  
TCBG1[2:0]  
SLPBG[2:0]  
W
R
UBG3  
0
DBG3  
0
TCBG2[2:0]  
0
W
R
0
0
W
R
V1P2BG2[3:0]  
V2P5BG2[3:0]  
V1P2BG1[3:0]  
V2P5BG1[3:0]  
W
R
W
R
0
0
0
0
0
0
0
0
0
0
0
0
0
0
LIN  
Trim LIN  
W
R
TRIM_LVT  
LVT  
Trim low voltage threshold  
W
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
377/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 564. Module memory map (continued)  
(312  
Offset  
Name  
7
6
5
4
3
2
1
0
)
TRIM_OSC (hi)  
Trim LP oscillator  
TRIM_OSC (lo)  
Trim LP oscillator  
R
W
R
0xE8  
0xE9  
LPOSC[12:0]  
W
R
0
0
0
0
0
0
0
0
0xEA-  
0xEF  
Reserved  
W
Notes  
312. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
5.3.2.1  
Trim bandgap 0 (TRIM_BG0 (hi))  
Table 565. Trim bandgap 0 (TRIM_BG0 (hi))  
(313)  
Offset  
Access: User read/write  
1 0  
0xE0  
7
0
6
0
5
4
3
0
2
0
R
TCIBG2[2:0]  
0
TCIBG1[2:0]  
0
W
Reset  
0
0
0
0
Notes  
313. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 566. Trim bandgap 0 (TRIM_BG0 (hi)) - register field descriptions  
Field  
Description  
5-3  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
TCIBG2[2:0]  
2-0  
TCIBG1[2:0]  
5.3.2.2  
Trim bandgap 0 (TRIM_BG0 (lo))  
Table 567. Trim bandgap 0 (TRIM_BG0 (lo))  
(314)  
Offset  
Access: User read/write  
1 0  
0xE1  
7
0
6
0
5
4
IBG2[2:0]  
0
3
0
2
0
R
IBG1[2:0]  
0
W
Reset  
0
0
0
0
Notes  
314. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
378/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
Table 568. Trim bandgap 0 (TRIM_BG0 (lo)) - register field descriptions  
Field  
Description  
5-3  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
IBG2[2:0]  
2-0  
IBG1[2:0]  
5.3.2.3  
Trim bandgap 1 (TRIM_BG1 (hi))  
Table 569. Trim bandgap 1 (TRIM_BG1 (hi))  
(315)  
Offset  
Access: User read/write  
1 0  
0xE2  
7
6
DBG3  
0
5
4
3
0
2
0
R
UBG3  
0
TCBG2[2:0]  
0
TCBG1[2:0]  
0
W
Reset  
0
0
Notes  
315. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 570. Trim bandgap 1 (TRIM_BG1 (hi)) - register field descriptions  
Field  
Description  
7
UBG3  
6
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
DBG3  
5-3  
TCBG2[2:0]  
2-1  
TCBG1[2:0]  
5.3.2.4  
Trim bandgap 1 (TRIM_BG1 (lo))  
Table 571. Trim bandgap 1 (TRIM_BG1 (lo))  
(316)  
Offset  
Access: User read/write  
1 0  
0xE3  
7
0
6
0
5
0
4
0
3
0
2
0
R
SLPBG[2:0]  
0
W
Reset  
0
0
0
0
0
0
Notes  
316. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 572. Trim bandgap 1 (TRIM_BG1 (lo)) - register field descriptions  
Field  
Description  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
2-0  
SLPBG[2:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
379/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5.3.2.5  
Trim bandgap 2 (TRIM_BG2 (hi))  
Table 573. Trim bandgap 2 (TRIM_BG2 (hi))  
(317)  
Offset  
Access: User read/write  
0xE4  
7
6
5
4
3
0
2
0
1
0
0
R
V1P2BG2[3:0]  
V1P2BG1[3:0]  
W
Reset  
0
0
0
0
0
Notes  
317. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 574. Trim bandgap 2 (TRIM_BG2 (hi)) - register field descriptions  
Field  
Description  
7-4  
V1P2BG2[3:0  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality"  
for location information.  
3-0  
V1P2BG1[3:0  
5.3.2.6  
Trim Bandgap 2 (TRIM_BG2 (lo))  
Table 575. Trim bandgap 2 (TRIM_BG2 (hi))  
(318)  
Offset  
Access: User read/write  
0
0xE5  
7
6
5
4
3
0
2
0
1
0
R
V2P5BG2[3:0]  
V2P5BG1[3:0]  
W
Reset  
0
0
0
0
0
Notes  
318. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 576. Trim bandgap 2 (TRIM_BG2 (hi)) - register field descriptions  
Field  
Description  
7-4  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
V2P5BG2[3:0  
3-0  
V2P5BG1[3:0  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
380/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5.3.2.7  
trim LIN (TRIM_LIN)  
Table 577. Trim LIN (TRIM_LIN)  
(319)  
Offset  
Access: User read/write  
0xE6  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
LIN  
0
R
W
Reset  
0
0
0
0
0
0
0
Notes  
319. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 578. Trim LIN (TRIM_LIN) - register field descriptions  
Field  
Description  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
0
LIN  
5.3.2.8  
Trim low voltage threshold (TRIM_LVT)  
Table 579. Trim low-voltage threshold (TRIM_LVT)  
(320)  
Offset  
Access: User read/write  
0
0xE7  
7
0
6
0
5
0
4
0
3
0
2
0
1
0
R
W
LVT  
0
Reset  
0
0
0
0
0
0
0
Notes  
320. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 580. Trim low-voltage threshold (TRIM_LVT) - register field descriptions  
Field  
Description  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation of the  
MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die functionality" for  
location information.  
0
LVT  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
381/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
5.3.2.9  
Trim LP oscillator (TRIM_OSC (hi), TRIM_OSC (lo))  
Table 581. Trim LP oscillator (TRIM_OSC (hi), TRIM_OSC (lo))  
(321)  
Offset  
Access: User read/write  
0xE8  
7
0
0
6
0
0
5
0
1
4
0
1
3
0
1
2
1
0
1
0
0
1
R
LPOSC[12:8]  
0
W
Reset  
R
W
LPOSC[7:0]  
Reset  
1
Notes  
321. Offset related to 0x0200 for blocking access and 0x300 for non blocking access within the global address space.  
Table 582. Trim LP Oscillator (TRIM_OSC (hi), TRIM_OSC (lo)) - Register Field Descriptions  
Field  
Description  
The optimal content of this register is determined during final test and stored in the microcontroller IFR. For proper operation  
of the MM912_637, the content has to be copied to this location. See Section 5.2.1, “IFR - trimming content for analog die  
functionality" for location information.  
12-0  
LPOSC[12:0]  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
382/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
6
Packaging  
For the most current package revision, visit www.nxp.com and perform a keyword search using the “98A” listed below.  
6.1  
Package dimensions SOT619-25(D)  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
383/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
384/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
385/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
386/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
387/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
388/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
6.2  
Package dimensions SOT619-16  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
389/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
390/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
391/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
392/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
393/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
394/396  
NXP Semiconductors  
MM912_637  
Intelligent integrated precision battery sensor  
7
Revision history  
Revision  
Date  
Description of Changes  
1.0  
2.0  
4/2011  
8/2011  
Initial release  
Minor changes throughout the document  
Minor description changes and logo to align this data sheet to the Xtrinsic product platform. No content  
was altered.  
3.0  
1/2012  
• Added targeted applications  
• Normal mode current max = 25 mA  
• MM912_637 stop/sleep/pseudo stop consumption combined for the product  
• Max operating conditions on Isense set to +/-0.3 V  
• Low voltage resetH lower limit = 1.9 V  
• Undervoltage interrupt assert lower limit = 4.55 V  
• Undervoltage interrupt deassert lower limit = 4.7 V  
• Description updated to fit current implementation on current ampere hour counter: The accumulator  
could be reset by writing 1 into AHCR register. The Ampere Hour Counter is counting after wake-up. In  
Normal mode, the accumulator register ACQ_AHC can be read out any time.  
10/2013  
4.0  
• Added RESET to RESETA connection to Figure 4. Required / Recommended External Components.  
• Added connection information to VDDX/VDDRX, VDDH/VDDD2D and RESET/RESETA pins into pin  
description.  
• Repeated description of the Life Time Counter  
• Clarified to wait for PLL Lock after wake-up  
• Repeated description of Low Power Current trigger threshold  
• Removed Xtrinsic logo. No other change to the document  
• Changed document status to Technical Data.  
3/2014  
1/2015  
• Remove option detailing reduced accuracy for voltage and current measurement if the temperature  
based compensation is not used (single temperature calibration). All known customers are using  
temperature based compensation for best accuracy.  
5.0  
6.0  
• Updated tables 62 and 182, and updated description corresponding descriiption tables 27 and 184.  
• Updated per PB #16604.  
8/2016  
6/2021  
• Updated to NXP document form and style  
• Added four part numbers to Table 1., “Ordering information" and Table 2., “Ordering options":  
MM912I637TM2EP, MM912J637TM2EP, MM912I637TV1EP and MM912J637TV1EP, and the  
corresponding package information  
MM912_637D1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2021. All rights reserved.  
Data sheet: Technical data  
Rev. 6.0 — 6/2021  
395/396  
Information in this document is provided solely to enable system and software implementers to use NXP products. There  
are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on  
the information in this document.  
How to Reach Us:  
Home Page:  
www.nxp.com  
Web Support:  
www.nxp.com/support  
NXP Semiconductors reserves the right to make changes without further notice to any products herein. NXP  
Semiconductors makes no warranty, representation, or guarantee regarding the suitability of its products for any  
particular purpose, nor does NXP Semiconductors assume any liability arising out of the application or use of any product  
or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.  
“Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different  
applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be  
validated for each customer application by customer’s technical experts. NXP Semiconductors does not convey any  
license under its patent rights nor the rights of others. NXP Semiconductors sells products pursuant to standard terms  
and conditions of sale, which can be found at the following address: www.nxp.com/SalesTermsandConditions.  
NXP is a trademark of NXP B.V. SMARTMOS is a trademark of NXP B.V.   
All other product or service names are the property of their respective owners.  
© NXP B.V. 2021. All rights reserved.  
Document Number: MM912_637D1  
Rev. 6.0  
6/2021  

相关型号:

MM912-637

Intelligent integrated precision battery sensor
NXP

MM912-637D1

Intelligent integrated precision battery sensor
NXP

MM912F634

Integrated S12 Based Relay Driver with LIN
FREESCALE

MM912F634CV1AE

Integrated S12 Based Relay Driver with LIN
FREESCALE

MM912F634CV2AE

Integrated S12 Based Relay Driver with LIN
FREESCALE

MM912F634CV2AE

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, MS-026BBC, LQFP-48
NXP

MM912F634CV2AP

Integrated S12 Based Relay Driver with LIN
FREESCALE

MM912F634CV2AP

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, MS-026BBC, LQFP-48
NXP

MM912F634DV1AER2

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-48
NXP

MM912F634DV2AE

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-48
NXP

MM912F634DV2AP

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-48
NXP

MM912F634DV2APR2

SPECIALTY MICROPROCESSOR CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-48
NXP