MMBT3906,215 [NXP]
MMBT3906 - PNP switching transistor TO-236 3-Pin;
| 型号： | MMBT3906,215 |
| 厂家： | 
NXP |
| 描述： | MMBT3906 - PNP switching transistor TO-236 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MMBT3906
PNP switching transistor
Product data sheet
2003 Mar 18
Supersedes data of 2000 Apr 11
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
FEATURES
QUICK REFERENCE DATA
• Collector current capability IC = −200 mA
• Collector-emitter voltage VCEO = −40 V.
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
−40
V
−200
mA
APPLICATIONS
PINNING
• General switching and amplification.
PIN
1
DESCRIPTION
DESCRIPTION
base
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
2
emitter
collector
3
MARKING
handbook, halfpage
MARKING CODE(1)
3
TYPE NUMBER
MMBT3906
3
2
7B∗
1
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
1
2
Top view
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
−40
UNIT
−
−
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−40
open collector
−6
−200
−200
−100
250
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18
2
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
500
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN.
MAX.
−50
UNIT
nA
collector cut-off current
emitter cut-off current
DC current gain
−
−
IC = 0; VEB = −6 V
VCE = −1 V; see Fig.2
IC = −0.1 mA
−50
nA
60
80
−
IC = −1 mA
−
IC = −10 mA
100
60
30
−
300
−
IC = −50 mA
IC = −100 mA
−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−250
−400
−850
−950
4.5
10
mV
mV
mV
mV
pF
−
VBEsat
base-emitter saturation voltage IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−
−
Cc
Ce
collector capacitance
emitter capacitance
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
IC = ic = 0; VEB = −500 mV;
−
pF
f = 1 MHz
fT
F
transition frequency
noise figure
IC = −10 mA; VCE = −20 V;
f = 100 MHz
250
−
MHz
dB
IC = −100 µA; VCE = −5 V;
−
4
RS = 1 kΩ; f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.7
td
tr
delay time
rise time
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA
−
−
−
−
35
ns
ns
ns
ns
35
ts
tf
storage time
fall time
225
75
2003 Mar 18
3
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
MHC459
MHC460
600
−250
handbook, halfpage
handbook, halfpage
I
C
(1)
(3) (2)
(mA)
h
FE
−200
(1)
(4)
(5)
400
−150
−100
(6)
(7)
(2)
(8)
200
(9)
(3)
−50
(10)
0
−10
0
0
−1
2
3
−1
−10
−10
−10
−2
−4
−6
−8
−10
(V)
I
(mA)
V
C
CE
Tamb = 25 °C.
(1) IB = −1.5 mA.
(2) IB = −1.35 mA.
(3) IB = −1.2 mA.
(4) IB = −1.05 mA.
(5)
I
B = −0.9 mA.
(9)
IB = −0.3 mA.
VCE = −1 V.
(6) IB = −0.75 mA.
(7) IB = −0.6 mA.
(8) IB = −0.45 mA.
(10) IB = −0.15 mA.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 Collector current as a function of
collector-emitter voltage.
Fig.2 DC current gain; typical values.
MHC461
MHC462
−1200
−1200
handbook, halfpage
handbook, halfpage
V
V
BE
BEsat
(mV)
(mV)
−1000
−1000
(1)
(1)
(2)
(2)
−800
−600
−800
−600
(3)
(3)
−400
−200
−400
−200
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −1 V.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
T
amb = 150 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter voltage as a function of
collector current.
Fig.5 Base-emitter saturation voltage as a
function of collector current.
2003 Mar 18
4
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
MHC463
3
−10
handbook, halfpage
V
CEsat
(mV)
(1)
(2)
2
−10
(3)
−10
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
IC/IB = 10.
(1) Tamb = 25 °C.
(2) Tamb = 150 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current.
V
B
V
C
BB
CC
R
R
V
(probe)
(probe)
oscilloscope
450 Ω
o
oscilloscope
450 Ω
R2
V
i
DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
5
2003 Mar 18
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Mar 18
6
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Mar 18
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2003 Mar 18
Document order number: 9397 750 10243
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