MMBZ12VAL/DG [NXP]
Double ESD protection diodes for transient overvoltage suppression; 双重ESD保护二极管瞬态过电压抑制
| 型号： | MMBZ12VAL/DG |
| 厂家： | 
NXP |
| 描述： | Double ESD protection diodes for transient overvoltage suppression |
| 文件： | 总15页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZxVAL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 1 September 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Type number[1]
Package
NXP
Configuration
JEDEC
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
SOT23
TO-236AB
dual common anode
[1] All types available as /DG halogen-free version.
1.2 Features
I Unidirectional ESD protection of
I ESD protection up to 30 kV (contact
two lines
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd ≤ 140 pF I IEC 61643-321
I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualified
I Ultra low leakage current: IRM ≤ 5 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Automotive electronic control units
I Portable electronics
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
-
-
-
-
-
-
8.5
12
V
V
V
V
V
V
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
14.5
17
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
22
MMBZ33VAL
26
MMBZ33VAL/DG
Cd
diode capacitance
f = 1 MHz; VR = 0 V
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
110
85
70
65
48
45
140
105
90
pF
pF
pF
pF
pF
pF
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
80
MMBZ27VAL
MMBZ27VAL/DG
60
MMBZ33VAL
55
MMBZ33VAL/DG
2. Pinning information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (diode 1)
cathode (diode 2)
common anode
3
3
2
3
1
2
1
2
006aaa154
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
2 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
MMBZ12VAL
plastic surface-mounted package; 3 leads
SOT23
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ12VAL/DG
MMBZ15VAL/DG
MMBZ18VAL/DG
MMBZ20VAL/DG
MMBZ27VAL/DG
MMBZ33VAL/DG
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 5.
Marking codes
Marking code[1]
Type number
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Type number
Marking code[1]
*H1
*H2
*H3
*H4
*H5
*H6
MMBZ12VAL/DG
MMBZ15VAL/DG
MMBZ18VAL/DG
MMBZ20VAL/DG
MMBZ27VAL/DG
MMBZ33VAL/DG
TH*
TK*
TM*
TP*
TR*
TT*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
3 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
PPPM
Parameter
Conditions
Min
Max
Unit
[1][2]
[1][2]
rated peak pulse power
rated peak pulse current
tp = 10/1000 µs
tp = 10/1000 µs
-
40
W
IPPM
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
2.35
1.9
1.6
1.4
1
A
A
A
A
A
A
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
0.87
MMBZ33VAL/DG
Per device
[3]
[4]
Ptot
total power dissipation
T
amb ≤ 25 °C
-
265
mW
mW
°C
-
360
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Max Unit
[1][2]
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
-
-
30
2
kV
kV
machine model
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
4 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Table 8.
ESD standards compliance
Conditions
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
> 8 kV
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
006aab319
150
100 %
90 %
I
PP
(%)
100 % I ; 10 µs
100
PP
50 % I ; 1000 µs
PP
50
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
1.0
2.0
3.0
4.0
t
(ms)
p
Fig 1. 10/1000 µs pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61643-321
6. Thermal characteristics
Table 9.
Thermal characteristics
Symbol Parameter
Per device
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from junction in free air
to ambient
-
-
-
-
-
-
460
340
50
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Measured from pin 1 or 2 to pin 3.
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
5 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 10 mA
-
-
0.9
V
VRWM
reverse standoff
voltage
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
-
-
-
-
-
-
8.5
12
V
V
V
V
V
V
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
14.5
17
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
22
MMBZ33VAL
26
MMBZ33VAL/DG
IRM
reverse leakage current
MMBZ12VAL
MMBZ12VAL/DG
VRWM = 8.5 V
VRWM = 12 V
VRWM = 14.5 V
VRWM = 17 V
VRWM = 22 V
VRWM = 26 V
IR = 1 mA
-
-
-
-
-
-
0.1
0.1
0.1
0.1
0.1
0.1
5
5
5
5
5
5
nA
nA
nA
nA
nA
nA
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
VBR
breakdown voltage
MMBZ12VAL
MMBZ12VAL/DG
11.4
12
12.6
15.75
18.9
21
V
V
V
V
V
V
MMBZ15VAL
MMBZ15VAL/DG
14.25 15
MMBZ18VAL
MMBZ18VAL/DG
17.1
19
18
20
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
25.65 27
31.35 33
28.35
34.65
MMBZ33VAL
MMBZ33VAL/DG
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
6 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
110
85
70
65
48
45
140
105
90
pF
pF
pF
pF
pF
pF
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
80
MMBZ27VAL
MMBZ27VAL/DG
60
MMBZ33VAL
55
MMBZ33VAL/DG
[1][2]
VCL
clamping voltage
MMBZ12VAL
MMBZ12VAL/DG
IPPM = 2.35 A
IPPM = 1.9 A
IPPM = 1.6 A
IPPM = 1.4 A
IPPM = 1 A
-
-
-
-
-
-
-
-
-
-
-
-
17
21
25
28
40
46
V
V
V
V
V
V
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
IPPM = 0.87 A
MMBZ33VAL/DG
SZ
temperature coefficient IZ = 1 mA
MMBZ12VAL
MMBZ12VAL/DG
-
-
-
-
-
-
8.2
11
-
-
-
-
-
-
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
14
MMBZ20VAL
MMBZ20VAL/DG
15.8
23
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
29.8
MMBZ33VAL/DG
[1] In accordance with IEC 61643-321(10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
7 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
006aab320
006aab321
3
10
1.2
P
PPM
P
PPM
(W)
P
PPM(25°C)
2
10
0.8
10
0.4
1
10
0
−2
−1
2
3
10
1
10
10
10
(ms)
0
50
100
150
200
t
T (°C)
j
p
MMBZ27VAL: unidirectional and bidirectional
Tamb = 25 °C
Fig 3. Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4. Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab323
006aab322
2
100
10
I
C
d
RM
(nA)
(pF)
80
10
60
40
1
−1
10
(1)
(2)
−2
20
0
10
(3)
(4)
−3
10
0
5
10
15
20
25
(V)
−75
−25
25
75
125
T
175
(°C)
amb
V
R
f = 1 MHz; Tamb = 25 °C
MMBZ27VAL: VRWM = 22 V
(1) MMBZ15VAL: unidirectional
(2) MMBZ15VAL: bidirectional
(3) MMBZ27VAL: unidirectional
(4) MMBZ27VAL: bidirectional
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Reverse leakage current as a function of
ambient temperature; typical values
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
8 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
I
I
PPM
I
PP
−V
−V
−V
V
CL
BR
RWM
I
I
R
RM
−I
−I
−V −V
CL
−V
RWM
RM
R
BR
−I
−I
V
V
V
RM
R
RWM BR CL
−
+
P-N
−
+
−I
PP
−I
−I
PP
−I
PPM
006aab325
006aab324
PPM
Fig 7. V-I characteristics for a unidirectional
ESD protection diode
Fig 8. V-I characteristics for a bidirectional
ESD protection diode
8. Application information
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000 µs waveform.
line 1 to be protected
line 2 to be protected
line 1 to be protected
MMBZxVAL
GND
MMBZxVAL
GND
unidirectional protection
of two lines
bidirectional protection
of one line
006aab326
Fig 9. Typical application: ESD and transient voltage protection of data lines
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
9 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 10. Package outline SOT23 (TO-236AB)
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
10 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
11. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
MMBZ12VAL
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ12VAL/DG
MMBZ15VAL/DG
MMBZ18VAL/DG
MMBZ20VAL/DG
MMBZ27VAL/DG
MMBZ33VAL/DG
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
[1] For further information and the availability of packing methods, see Section 15.
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
11 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
12. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 11. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 12. Wave soldering footprint SOT23 (TO-236AB)
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
12 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
13. Revision history
Table 12. Revision history
Document ID
Release date
20080901
Data sheet status
Change notice
Supersedes
MMBZXVAL_SER_1
Product data sheet
-
-
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
13 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
14.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
MMBZXVAL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
14 of 15
MMBZxVAL series
NXP Semiconductors
Double ESD protection diodes for transient overvoltage suppression
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . . 9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
9.1
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 September 2008
Document identifier: MMBZXVAL_SER_1
相关型号：
MMBZ12VAL/DG,215
MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin
NXP
MMBZ12VALFHT116
Trans Voltage Suppressor Diode, 40W, 8.5V V(RWM), Unidirectional, 2 Element, Silicon,
ROHM
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