MMBZ33VAL/DG,215 [NXP]
MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin;
| 型号： | MMBZ33VAL/DG,215 |
| 厂家： | 
NXP |
| 描述： | MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin |
| 文件： | 总17页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Type number
Package
NXP
Configuration
JEDEC
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
SOT23
TO-236AB
dual common anode
1.2 Features
Unidirectional ESD protection of
ESD protection up to 30 kV (contact
two lines
discharge)
Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD)
Low diode capacitance: Cd ≤ 280 pF IEC 61643-321
Rated peak pulse power: PPPM = 40 W AEC-Q101 qualified
Ultra low leakage current: IRM = 5 nA
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Automotive electronic control units
Portable electronics
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
diode capacitance
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
V
V
V
V
V
V
V
V
V
V
3
4.5
6
6.5
8.5
12
14.5
17
22
26
Cd
f = 1 MHz; VR = 0 V
-
-
-
-
-
-
-
-
-
-
-
210
175
150
155
130
110
85
280
230
200
200
170
140
105
90
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
70
65
80
48
60
45
55
2. Pinning information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (diode 1)
cathode (diode 2)
common anode
3
3
2
3
1
2
1
2
006aaa154
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
2 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 5.
Marking codes
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Marking code[1]
RR*
RS*
RT*
RU*
RV*
*H1
*H2
*H3
*H4
*H5
*H6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
3 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
PPPM
Parameter
Conditions
Min
Max
Unit
[1][2]
rated peak pulse power
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
rated peak pulse current
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
tp = 10/1000 μs
-
24
W
-
40
W
[1][2]
IPPM
tp = 10/1000 μs
-
-
-
-
-
-
-
-
-
-
-
3
A
A
A
A
A
A
A
A
A
A
A
2.76
2.5
1.7
1.7
2.35
1.9
1.6
1.4
1
0.87
Per device
Ptot
total power dissipation
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Tamb ≤ 25 °C
[3]
[4]
-
-
265
290
mW
mW
[4]
-
360
mW
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
4 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
[1][2]
[2]
VESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
-
-
30
2
kV
kV
machine model
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Table 8.
ESD standards compliance
Standard
Per diode
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
> 8 kV
MIL-STD-883; class 3 (human body model)
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
5 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
001aaa631
I
PP
006aab319
150
100 %
90 %
I
PP
(%)
100 % I ; 10 μs
100
PP
50 % I ; 1000 μs
PP
50
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
1.0
2.0
3.0
4.0
t
(ms)
p
Fig 1. 10/1000 μs pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61643-321
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
6 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
6. Thermal characteristics
Table 9.
Thermal characteristics
Symbol Parameter
Per device
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from junction in free air
to ambient
[1]
[2]
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
-
-
-
-
460
420
K/W
K/W
[2]
-
-
340
K/W
[3]
Rth(j-sp)
thermal resistance from junction
to solder point
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
-
-
-
-
150
50
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Measured from pin 1 or 2 to pin 3.
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
7 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
7. Characteristics
Table 10. Characteristics
amb = 25 °C unless otherwise specified.
T
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Per diode
VF
forward voltage
reverse standoff voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
reverse leakage current
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
breakdown voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
IF = 10 mA
-
-
0.9
V
VRWM
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
V
V
V
V
V
V
V
V
V
V
3
4.5
6
6.5
8.5
12
14.5
17
22
26
IRM
VRWM = 3 V
-
-
-
-
-
-
-
-
-
-
-
0.24
5
5
μA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
VRWM = 3 V
200
300
100
20
5
VRWM = 4.5 V
VRWM = 6 V
10
5
VRWM = 6.5 V
VRWM = 8.5 V
VRWM = 12 V
VRWM = 14.5 V
VRWM = 17 V
VRWM = 22 V
VRWM = 26 V
1
0.1
0.1
0.1
0.1
0.1
0.1
5
5
5
5
5
VBR
IR = 20 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
5.32 5.6
5.89 6.2
6.46 6.8
8.65 9.1
5.88
6.51
7.14
9.56
10.5
12.6
V
V
V
V
V
V
9.5
10
11.4 12
14.25 15
17.1 18
15.75 V
18.9
21
V
V
19
20
25.65 27
31.35 33
28.35 V
34.65 V
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
8 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Cd
diode capacitance
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
clamping voltage
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
temperature coefficient
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
f = 1 MHz; VR = 0 V
-
-
-
-
-
-
-
-
-
-
-
210
175
150
155
130
110
85
280
230
200
200
170
140
105
90
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
70
65
80
48
60
45
55
[1][2]
VCL
IPPM = 3 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
V
V
V
V
V
V
V
V
V
V
V
IPPM = 2.76 A
IPPM = 2.5 A
IPPM = 1.7 A
IPPM = 1.7 A
IPPM = 2.35 A
IPPM = 1.9 A
IPPM = 1.6 A
IPPM = 1.4 A
IPPM = 1 A
8.7
9.6
14
14.2
17
21
25
28
40
46
IPPM = 0.87 A
SZ
IZ = 20 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
IZ = 1 mA
-
-
-
-
-
-
-
-
-
-
-
1.7
2.1
3.2
5.4
6.5
8.2
11
-
-
-
-
-
-
-
-
-
-
-
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
14
15.8
23
29.8
[1] In accordance with IEC 61643-321(10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
9 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
006aab320
006aab321
3
10
1.2
P
PPM
P
PPM
(W)
P
PPM(25°C)
2
10
0.8
10
0.4
1
10
0
−2
−1
2
3
10
1
10
10
10
(ms)
0
50
100
150
200
t
p
T (°C)
j
Tamb = 25 °C
unidirectional and bidirectional
Fig 3. Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4. Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab839
006aab840
250
150
C
(pF)
d
C
(pF)
d
200
100
(1)
150
100
50
(3)
(2)
(1)
(4)
(4)
(5)
(6)
50
(2)
(3)
(2)
(3)
0
0
2
4
6
0
5
10
15
V
R
(V)
V (V)
R
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) MMBZ5V6AL: unidirectional
(2) MMBZ5V6AL: bidirectional
(3) MMBZ6V8AL: unidirectional
(4) MMBZ6V8AL: bidirectional
(1) MMBZ10VAL: unidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ15VAL: bidirectional
(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
10 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
006aab841
3
2
10
I
(1)
RM
(nA)
10
10
(2)
(3)
1
−1
10
−2
−3
−4
10
(4)
10
10
−75
−25
25
75
125
amb
175
T
(°C)
(1) MMBZ5V6AL: VRWM = 3 V
(2) MMBZ6V8AL: VRWM = 4.5 V
(3) MMBZ9V1AL: VRWM = 6 V
(4) MMBZ27VAL: VRWM = 22 V
Fig 7. Reverse leakage current as a function of ambient temperature; typical values
I
I
PPM
I
PP
−V
CL
−V
BR
−V
RWM
V
I
I
R
RM
−I
RM
−I
R
−V −V
−V
RWM
CL
BR
−I
RM
−I
R
V
V
V
RWM BR CL
−
+
P-N
−
+
−I
PP
−I
−I
PP
−I
PPM
006aab325
006aab324
PPM
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
Fig 9. V-I characteristics for a bidirectional
ESD protection diode
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
11 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
8. Application information
The MMBZxAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide
a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL,
MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line,
for a 10/1000 μs waveform.
line 1 to be protected
line 2 to be protected
line 1 to be protected
MMBZxAL
GND
MMBZxAL
GND
unidirectional protection
of two lines
bidirectional protection
of one line
006aab842
Fig 10. Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the MMBZxAL series as close to the input terminal or connector as possible.
2. The path length between the MMBZxAL series and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all PCB conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
12 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
10. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
11. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-215
10000
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 15.
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
13 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
12. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 12. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 13. Wave soldering footprint SOT23 (TO-236AB)
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
14 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
13. Revision history
Table 12. Revision history
Document ID
Release date
20091210
Data sheet status
Change notice
Supersedes
MMBZXAL_SER_2
Modifications:
Product data sheet
-
MMBZXVAL_SER_1
• Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and
MMBZ10VAL added
• Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,
MMBZ27VAL/DG, MMBZ33VAL/DG removed
• Figure 5 and 7: updated
• Figure 6: added
• Figure 10: updated
• Section 14 “Legal information”: updated
MMBZXVAL_SER_1
20080901
Product data sheet
-
-
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
15 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
16 of 17
MMBZxAL series
NXP Semiconductors
Low capacitance unidirectional double ESD protection diodes
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 7
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application information. . . . . . . . . . . . . . . . . . 12
Test information. . . . . . . . . . . . . . . . . . . . . . . . 12
Quality information . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Packing information . . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
3
4
5
6
7
8
9
9.1
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 December 2009
Document identifier: MMBZXAL_SER_2
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