MMM7210BR2_技术文档

Document Number: MMM7210

Rev. 2.2, 07/2010

Freescale Semiconductor

Data Sheet: Technical Data

MMM7210

WCDMA/GSM/EDGE

Transceiver

LGA–170

Ordering Information

Device

Device Marking

Package

MMM7210B

MMM7210

170 pin LGA

Contents

1 Introduction

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

3 MMM7210 Signal Description . . . . . . . . . . . . . . .3

4 Electrostatic Discharge Characteristics . . . . . .8

5 Electrical Characteristics . . . . . . . . . . . . . . . . . .9

6 MMM7210 Applications Circuit . . . . . . . . . . . . .27

7 Package Information and Pinout . . . . . . . . . . .30

8 Product Documentation . . . . . . . . . . . . . . . . . . .33

The MMM7210 transceiver is a highly integrated

transceiver that supports 3GPP WCDMA/GSM/EGPRS

wireless standards. The digital input/output of the

MMM7210 interfaces directly to a baseband processor

using either Freescale legacy interface (FLI) or standard

3G DigRF interfaces.

The MMM7210 receiver has five independent RF inputs

which encompass all wireless band combinations. Each

path supports three primary modes of operation: a

reduced current and gain state to support WCDMA with

an external LNA and interstage SAW, an EGPRS mode

in which the LNA is connected directly to a SAW, and a

high linearity mode to support WCDMA operation when

directly matched to a duplexor. The three different

modes provide approximately the same input

impedances such that, even though the input match is

optimized for one mode, all three modes are usable.

Multi-mode RF inputs are converted to a common

baseband path which is shared between WCDMA and

EGPRS. This common baseband path is optimized for

die area and current consumption through the use of a

Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its

products.

Features

high dynamic range SD ADC. The receiver uses a homodyne configuration for WCDMA and a VLIF

configuration for EGPRS.

The transmitter (Tx) includes six independent RF outputs, four of these paths are dedicated to WCDMA

and two to EGPRS. Three of the WCDMA outputs are dedicated to high band and one for low band. The

two EGPRS outputs support the standard quad band configuration. The hybrid power control system

provides closed loop operation for all modes and power levels of EGPRS and provides closed loop power

control for WCDMA at high powers. To achieve the current drain goals driven by FOMA, the power

control system explicitly supports use of switched power supply for the WCDMA amplifiers.

2 Features

Listed below are key features of the MMM7210.

•

Five Rx inputs each supporting both WCDMA and GSM/EDGE

— GSM850 plus WCDMA bands V and VI

— EGSM and WCDMA band VIII

— DCS plus WCDMA bands III and IX

— PCS and WCDMA band II

— WCDMA bands I, IV, and X

•

Six Tx outputs

— Freescale’s polar GSM/EDGE modulation

– Low-band cellular/EGSM

– High-band DCS/PCS

— Direct launch WCDMA

– WCDMA bands V, VI, VIII, FOMA 800

– WCDMA bands III, IV, IX (FOMA 1700), X

– Band II (PCS band)

– Band I (UMTS band)

•

DigRF 3G interface or Freescale legacy interface

Auxiliary SPI to control LNAs, PAs, switching regulator, and antenna switch

Simplified timing and control through a MCU core

IQ auto calibration

Polar modulation auto calibration

Smart AOC Tx power control minimizes factory calibration

9.25 mm × 7.65 mm package

MMM7210 Data Sheet: Technical Data, Rev. 2.2

2

Freescale Semiconductor

MMM7210 Signal Description

TCXO

EDGE PA

1920 -1980 MHz

1850 -1910 MHz

1710-1980 MHz

VGA

HBIQ

Mod

NC

1710 -1785 MHz

SPI

WCDMA

Tx VCO

BB

Fltrs,

Drvrs

LBIQ

Mod

ΣΔ

824 -849 MHz

VGA

824-915 MHz

EGPRS

Tx VCO

B5-PA

GT1

GT 2

824-849 MHz

869-894 MHz

824 -915 MHz

S

W

Digital

Attenuator

Polar

Mod

WB1

824-849 MHz

GPO

2

1710 -1910 MHz

B2-PA

1850 -1910 MHz

Tx AUX SPI

4

Tx Synth

Rx Synth

WB2

WB3

1850 -1910 MHz

GPOs

Ant

4

GPO

1930 -1990 MHz

1920 -1980 MHz

2

Rx

VCO

869-894 MHz

Band V & GSM850

B1-PA

GC-

LPF

ΣΔ

1920 -1980 MHz

925 -960 MHz

EGSM

GPO

2110-2170 MHz

2

800/900

SPI

2/4

GR3 GR2 GR1

NC

1930 -1990 MHz

DIV

DigRF

3G

Band II & PCS

1800/1900

GC-

LPF

ΣΔ

1805 -1880 MHz

2110 -2170 MHz

DCS

2100

Band I

SPI

NC

GPO

2

MC13853

MMM7210

Rx SAW Filter

Module

Transceiver

Rx AUX SPI

4

Figure 1. System Block Diagram

3 MMM7210 Signal Description

Table 1. MMM7210 Signal Descriptions

Input/Output

Voltage

Number

Alternate Count

Type

Note

Range

RF

41, 42 RxCell

—

2

1

RF IN

—

GSM850 plus bands V and VI.

EGSM and band VIII.

DCS, band III, and band IX.

PCS and band II.

43, 44 RxEgsm

47, 48 RxDcs

45, 46 RxPcs

49, 50 RxUmts

RF IN

Bands I, IV, and X.

35

TxGsmLb

RF OUT

DCS and PCS.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

3

MMM7210 Signal Description

Table 1. MMM7210 Signal Descriptions (continued)

Input/Output

Alternate Count

Type

Voltage

Range

Note

Number

36

30

29

28

27

TxGsmHb

—

1

RF OUT

—

GSM850 and EGSM.

TxWcdmaLb

TxWcdmaDcs

TxWcdmaPcs

TxWcmdaUmts

Bands V, VI, and VIII.

Bands III, IV, and X.

Band II.

Band I.

Test

38, 40, AnaTest[3:0]

61, 62

—

4

ANA INOUT 0.1–1.975 V Traditional test mux.

Purely analog.

125

123

HssData

HssClk

—

1

DIG OUT

0.1–1.975 V

—

0.1–1.975 V Reference clock for high speed serial

interface analogous to DigRF SysClk.

124

160

HssFrm

—

1

DIG OUT

DIG IN

0.1–1.975 V Frame signal for HSS mux.

ScanMode

0.1–1.975 V Dedicated pin to enable test mode to be used

as needed (for scan mode).

107

154

BDM

—

1

DIG INOUT 0.1–1.975 V BDM is a debug port for the MCU.

TxMon

DIG INOUT 0.1–1.975 V TxMon is the Tx pin of a UART used as a

monitor.

18

RxMon

—

1

DIG INOUT 0.1–1.975 V RxMon is the Rx pin of the UART used to

allow direct access to the MCU.

Driving impedance must be tri-state when

used with serial flash.

137

148

DbGpio0

DbGpio1

—

1

DIG INOUT 0.1–1.975 V Digital GPO’s for debug and test.

Analog

97

CobraSf

—

1

2

ANA INOUT 0.1–1.975 V Bypass cap for WCDMA Tx VCO.

51, 69 SF[1:0]

ANA INOUT 0.1–1.975 V Bypass cap for RF VCO super filters.

One for 2G Rx and Tx and one for 3G Rx.

87

2

CLK_SF

—

1

ANA INOUT 0.1–1.975 V ClkSynth VCO SF pin

REF_BYP

ANA INOUT 0.1–1.975 V Bypass cap for reference plus visibility for

trim.

4

3

TCXO_IN

—

1

ANA IN

0–2.4 V

TCXO input. Takes 0.8 V sin wave.

TCXO_PWR

ANA OUT

2.475

Maximum

Supply for TCXO. Allows MMM7210 to enable

/ disable the TCXO. The TCXO regulator is

2.4 V.

96

Vramp

—

1

ANA OUT

0.1–2.2 V

Controls GSM PA Vramp and provides bias

signal to WCDMA PAs.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

4

Freescale Semiconductor

MMM7210 Signal Description

Table 1. MMM7210 Signal Descriptions (continued)

Input/Output

Number

Alternate Count

Type

Voltage

Range

Note

156

167

144

PacIn

—

1

ANA IN

0.1–2.3 V

Detector input for power control subsystem.

AocAdcCdCap

TxDacRef

ANA INOUT 0.1–1.975 V Reference for PAC ADC.

ANA OUT 0.1–1.975 V Vgc input voltage to WCDMA transmit

(internal control signal).

98

WcdmaTxZero

—

1

ANA INOUT 0.1–1.975 V Zero for WCDMA Tx PLL. Loop filter monitor

point for 3G Tx PLL.

Baseband Interface

8, 9

6, 7

140

RxData3G

TxData3G

SysClk

—

2

1

ANA OUT

ANA IN

0.1–1.975 V DigRF 3G line driver.

0.1–1.975 V DigRF 3G line receiver.

DIG OUT

0.1–1.975 V Provides TXCO divided by two in legacy

mode and at startup in DigRF 3G mode.

Transitions to 1248 MHz/48 in DigRF 3G high

speed mode.

128

SysClkEn

STANDBY

1

DIG IN

0.1–1.975 V DigRF 3G function.

Initiates the transition out of deep sleep

starting with turning on the TXCO and super

filters.

STANDBY is legacy mode to enable TCXO.

99

AuxRef[0]

—

1

2

ANA OUT

0.1–1.975 V Buffered copy of TCXO divided by two as a

nominally 1V sin wave.

89, 76 AuxRef[2:1]

0.1–1.975 V Buffered copies of the TCXO divided by two

as square waves at the nominally 1.8 V digital

interface voltage.

Programmable slew rate.

113

AuxRefEn

—

1

DIG IN

0.1–1.975 V Enables any of the AuxClk outputs. Starts up

the TCXO when SysClkEn is low.

116

126

RESETB

RefEnB

—

1

DIG IN

0.1–1.975 V Reset pin.

0.1–1.975 V Enables TCXO on SysClk without waking up

MMM7210. Primarily for use in PDA mode.

136

103

INTERRUPT

—

1

DIG OUT

DIG IN

0.1–1.975 V General purpose interrupt not intended for

normal operation.

LOW_BATT_B

0.1–1.975 V Asserted by PM IC when battery voltage

drops below threshold. Terminates 2GTx to

keep phone from shutting down.

Freescale Legacy Interface

127

115

151

MelodyTxDataI

MelodyTxDataQ

MelodyRxDataI

TMS

TDI

1

DIG IN

0.1–1.975 V Tx SSI as two bit serial stream

0.1–1.975 V

TDO

DIG OUT

0.1–1.975 V Rx SSI as two bit serial streams.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

5

MMM7210 Signal Description

Table 1. MMM7210 Signal Descriptions (continued)

Input/Output

Alternate Count

Type

Voltage

Range

Note

Number

150

138

MelodyRxDataQ

MelodyFrmIn

—

1

—

0.1–1.975 V

—

TCK

DIG IN

0.1–1.975 V Legacy 3G framing in.

Overloaded with JTAG clk.

162

15

MelodyFrmOut

Melody4XClk

TMS

—

1

DIG OUT

0.1–1.975 V Legacy 3G framing in.

Overloaded with JTAG state machine ctl.

0.1–1.975 V Legacy AFC’d clock. Will be either a jittered

15.36 MHz clock derived from the 1248 MHz

or a 15.6 MHz derived by 1248 / 80 as

determined by the capability of the clock PLL

in BB.

19

WspiDataIn

NRTST

—

1

DIG IN

0.1–1.975 V Connected to WB QSPI on BB.

Overloaded with JTAG reset.

155

WspiData4Wire

DIG OUT

0.1–1.975 V SPI read back for normal mode SPI.

Connected to WB QSPI on BB.

153

143

20

WspiClk

WspiFrm

MspiData

—

1

DIG IN

0.1–1.975 V WCDMA SPI clock.

0.1–1.975 V WCDMA SPI frame.

DIG INOUT 0.1–1.975 V GSM SPI data input.

Note: Mspi and Wspi are multiplexed inside of

MMM7210 transceiver.

164

165

166

11

MspiDout

MspiClk

MspiFrm

RxStrb

—

1

DIG OUT

DIG IN

0.1–1.975 V GSM SPI readback.

0.1–1.975 V GSM SPI clock.

0.1–1.975 V GSM SPI frame.

0.1–1.975 V L1 strobe for receiver.

10

TxStrb

0.1–1.975 V L1 strobe equivalent to Tx TAS.

0.1–1.975 V Defines AOC direction as read on RmpStrb.

0.1–1.975 V L1 strobe equivalent to TPC TAS.

0.1–1.975 V Reserved for future use.

101

139

114

13

TpcBit

RmpStrb

BlnkStrb

IfcMode1

0.1–1.975 V Sets interface mode to BB interface.

Sensed only as part of sequence out of reset.

147

IfcMode2

—

1

DIG IN

0.1–1.975 V Sets interface mode to proprietary interface.

Sensed only as part of sequence out of reset.

104

17

RxTxData

RxTxDataBbp

RxTxFrm

Strb

—

1

DIG INOUT 0.1–1.975 V DigRF 2G data pin.

DIG OUT

0.1–1.975 V DigRF 2G data out pin for normal mode SPI.

152

16

DIG INOUT 0.1–1.975 V DigRF 2G framing pin.

DIG IN

0.1–1.975 V DigRF 2G strobe.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

6

Freescale Semiconductor

MMM7210 Signal Description

Table 1. MMM7210 Signal Descriptions (continued)

Input/Output

Number

Alternate Count

Type

Voltage

Range

Note

FE Control

105,106 FeGpo[3:0]

129,142

—

4

1

DIG OUT

0.1–1.975 V GPOs, primarily but not necessarily to control

PAs.

100

102

112

91

RxAuxSpiClk

RxAuxSpiData

RxAuxSpiFrm

AuxSpiVdd1p8

GPO4

GPO5

GPO6

—

0.1–1.975 V Clock for auxiliary Rx SPI.

Optional GPO

DIG INOUT 0.1–1.975 V Data for RxAuxSpi.

Optional GPO.

DIG OUT

0.1–1.975 V Frame for auxiliary Rx SPI.

Optional GPO.

ANA OUT

0.1–1.975 V Provides power to digital interface of FE ICs.

Also serves as a conditioned enable signal.

(1.8 V).

119

130

131

118

TxAuxSpiClk

TxAuxSpiData

TxAuxSpiFrm

SwitcherClk

—

1

DIG OUT

0.1–1.975 V Clock for auxiliary Tx SPI.

DIG INOUT 0.1–1.975 V Data for auxiliary Tx SPI.

DIG OUT

0.1–1.975 V Frame for auxiliary Tx SPI.

0.1–1.975 V Divided down reference to serve as switcher

clock. 26 MHz down to 6.5 MHz using a

fractional divider.

117

BypNext

Cth

1

DIG INOUT 0.1–1.975 V Bi-direction GPIO. Optional gain switch

control (logic low = PA high gain state).

Supplies

52, 58, VddIn

79

—

3

1

VDD

2.675–2.875 V Supplies most analog regs on MMM7210.

Connect to VRF1 (2.775 V). Turned off in

deep sleep mode to minimize leakage.

75

VddTcxo

2.675–2.875 V Independent supply to TCXO and bandgap

reference. Connected to PMIC VRFREF

(2.775 V). Only turned off when handset is off.

161

VddIfc

1.775–1.975 V Supply for CMOS pins on digital interface.

Connect to PMIC SW2 (1.8 V).

Bypass network must be designed to

attenuate digital supply noise.

25, 94 VccTx2

—

2

VDD

2.675–2.875 V First pin connects to Tx modulator and VGA

(and external driver chokes). Connect to

VRF2 (2.775 V). Must be strongly decoupled

from VddIn to contain WCDMA envelope. The

second pin connects to the PA bias driver.

134

32

VccTx1

—

1

VDD

2.675–2.875 V Tx PLL and regs. Connect to VRF1 (2.775 V).

VccTxCp

2.675–2.875 V WCDMA Tx CP. Connect to VRF1 (2.775 V).

Needs to be bypassed with high level of

attenuation at 26 MHz.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

7

Electrostatic Discharge Characteristics

Table 1. MMM7210 Signal Descriptions (continued)

Input/Output

Voltage

Number

Alternate Count

Type

Note

Range

23

90

TxRegByp

VddDigIn

—

1

VDD

—

Pin for external bypass on 2.1V Tx regulator.

1.775–1.975 V Input to the digital regulator. May be tied to a

1.8 V switcher (regulate down to 1.2 V

internally).

88, 21 VddDigOut

—

2

VDD

1.1–1.65 V

(0.95V for

DSM)

Direct input to digital core to allow use of

external switcher (1.2 V typ.). External bypass

cap (1 uF) required if internal regulator is

used.

39

83

Vdd2p4_byp

—

1

VDD

—

Pin for external bypass of master 2.4 V

regulator.

Vdd1p2_byp

Pin for external bypass of master 1.2 V

regulator.

63

Vdd1p4_byp

Pin for external bypass of master 1.4 V

regulator.

92

Fuse_EPM_AVDD

Fuse supply voltage for burning the fuse

state.

135

ESDDIG

AGnd

1

51

7

GND

—

ESD Ground for DigCore.

Grounds for analog/RF circuits.

DGnd

Grounds for digital core and CMOS line

drivers/receivers.

Total

170

4 Electrostatic Discharge Characteristics

MMM7210 complies to the ESD characteristics listed below:

•

Human Body Model (HBM) to 2000V except for the pins listed in Table 2 which meet 300V

Machine Model (MM) to 150V except for the pins listed in Table 2 which meet 30V

Charge Device Model (CDM) to 200V except for the pins listed in Table 2 which meet 50V

Table 2. ESD Exceptions

LGA Pad

Description

RXCELL_N

RXCELL_P

RXEGSM_N

RXEGSM_P

RXPCS_N

41

42

43

44

45

MMM7210 Data Sheet: Technical Data, Rev. 2.2

8

Freescale Semiconductor

Electrical Characteristics

Table 2. ESD Exceptions (continued)

LGA Pad

46

Description

RXPCS_P

47

RXDCS_N

48

RXDCS_P

49

RXUMTS_N

RXUMTS_P

TXWCDMAUMTS

TXWCDMAPCS

TXWCDMADCS

TXWCDMALB

TXGSMLB

50

27

28

29

30

35

36

TXGSMHB

94

VCCTX2A

5 Electrical Characteristics

Table 3. General Specifications

(Specifications for T = 25° C unless otherwise noted)

a

Parameter

Minimum

Typical

Maximum

Unit

Operating Analog Supply Voltage (Less VCOs)

Operating Digital Supply Voltage

2.675

1.775

1.1

2.775

1.875

1.2

2.875

1.975

1.65

85

V

Operating Digital Core Supply Voltage

Operating Temperature

V

-30

27

°C

V

Absolute Maximum Voltage (50A DGO)

—

3.1

Current Drain - Deep Sleep Mode (DSM)

Analog Supplies (2.775 V)

5

1

22

24.4

6.5

100

—

µA

mA

Digital Supplies (1.875 V)

Digital Core Supply (1.2 V)

Current Drain - PDA DSM

Analog Supplies (2.775 V)

Digital Supplies (1.875 V)

Digital Core Supply (1.2 V)

1.8

2.8

2.5

2.2

3.4

Current Drain - Standby

Analog Supplies (2.775 V)

Digital Supplies (1.875 V)

Digital Core Supply (1.2 V)

9

3.5

5.7

12

4

7.3

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

9

Electrical Characteristics

Table 3. General Specifications (continued)

(Specifications for T = 25° C unless otherwise noted)

a

Parameter

Minimum

Typical

Maximum

Unit

WCDMA Current Drain - Rx Simplex

Analog Supplies (2.775 V)

Digital Supplies (1.875 V)

63.0

1.6

16.4

79

6.5

21

mA

—

Digital Core Supply (1.2 V)

WCDMA Current Drain - Tx Simplex (WCDMA Signal at -5 dBm)

Analog Supplies (2.775 V)

64.0

3.6

9.6

77.3

4

11.6

mA

—

Digital Supplies (1.875 V)

Digital Core Supply (1.2 V)

GSM Current Drain - Rx

Analog Supplies (2.775 V)

Digital Supply (1.875 V)

Digital Core (1.275 V)

78

1.1

12

93

4

13.5

GSM Current Drain - Rx Dual Mode

Analog Supplies (2.775 V)

Digital Supply (1.875 V)

71

1.1

12

87

4

13.5

mA

Digital Core (1.275 V)

GSM Current Drain - Tx

Analog Supplies (2.775 V)

Digital Supply (1.875 V)

Digital Core (1.275 V)

EDGE

65

3

10.5

106

4

12.9

—

Analog Supplies (2.775 V)

Digital Supply (1.875 V)

Digital Core (1.275 V)

76

3

10.8

91.5

4

11.2

5.1

WCDMA Receiver Performance

5.1.1

3G Rx Top Level Performance Summary

A summary of top level WCDMA receiver performance is shown in Table 4.

Table 4. Top Level 3G Rx Performance Summary

Parameter

Conditions

Minimum Typical Maximum

Unit

Rx

RF Input 1 (Band I, IV and X)

RF Input 2 (Band II)

—

2110

1930

1805

869

—

2170

1990

1880

885

MHz

RF Input 3 (Band III and IX)

RF Input 4 (Band V and VI)

RF Input 5 (Band VIII)

925

960

MMM7210 Data Sheet: Technical Data, Rev. 2.2

10

Freescale Semiconductor

Electrical Characteristics

Table 4. Top Level 3G Rx Performance Summary (continued)

Conditions

Parameter

Minimum Typical Maximum

Unit

Differential Input impedance¹

2100 Band

1900 Band

1800 Band

900 Band

17-j69

9-j61

9-j60

14-j74

13-j80

ohms

—

800 Band

Band I

Blocking Desired: (Rx + 200kHz) = -91.5 dBm

F1= 10 MHz

-4.7

1.3

6.4

3.3

—

dB

WCDMA Blocker ≥ - 43.8 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -91.5 dBm

F1= 15 MHz

WCDMA Blocker ≥ - 31.8dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -80.5 dBm

F1= 5 MHz

12.9

2.4

WCDMA Blocker ≥ - 39.8dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -91.5 dBm

F1= Rx 10Mhz (CW), -33.8 dBm

F2= Rx 20 MHz (WCDMA); -33.8 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -91.5 dBm

F1= Rx 15Mhz (CW) ≥ - 31.8dBm

-1.7

6.2

F2= Rx (15 MHz +300kHz) (CW); - 31.8dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dBm

–

-107.5

6.7

-105.7

—

dBm

dB

Band II

Blocking Desired: (Rx + 200kHz) = -92 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 46.3 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -92 dBm

F1= 15 MHz

-4.7

4.5

10.3

5.4

—

dB

WCDMA Blocker ≥ - 34.3dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -85 dBm

F1= 5 MHz

WCDMA Blocker ≥ - 42.3dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -85 dBm

F1= 2.7 MHz

GMSK Blocker ≥ - 47.3dBm

Record SNR in 3.84 MHz BW

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

11

Electrical Characteristics

Parameter

Table 4. Top Level 3G Rx Performance Summary (continued)

Conditions Minimum Typical Maximum

Unit

Cascaded IP3 Desired: (Rx + 200kHz) = -92.0 dBm

F1= Rx 10Mhz (CW), -36.2 dBm

1.3

4.0

—

dB

F2= Rx 20 MHz (WCDMA); -36.2 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92 dBm

F1= Rx 15Mhz (CW) => - 34.3 dBm

F2= Rx (15 MHz +300kHz) (CW); - 34.3 dBm

Record SNR in 3.84 MHz BW

-1.7

6.6

—

dB

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

–

-109.0

8.1

-106

—

dBm

dB

Band III

Blocking Desired: (Rx + 200kHz) = -91 dBm

F1= 10 MHz

-4.7

WCDMA Blocker≥ - 45.3 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -90 dBm

F1= 15 MHz

-4.7

1.3

5.1

10.8

5.5

—

dB

WCDMA Blocker ≥ - 33.3 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -84 dBm

F1= 5 MHz

WCDMA Blocker ≥ - 41.3 dBm

Record SNR in 3.84 MHz BW

NarroQPSK, case25 (GTC 5) Desired: (Rx + 200kHz) = -84 dBm

and Blocking F1= 2.8 MHz

GMSK Blocker ≥ - 45.3 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -92.0 dBm

F1= Rx 10Mhz (CW), -35.2 dBm

3.0

F2= Rx 20 MHz (WCDMA); -35.2 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92 dBm

F1= Rx 15Mhz (CW) => - 34.3 dBm

F2= Rx (15 MHz +300kHz) (CW); - 34.3 dBm

Record SNR in 3.84 MHz BW

-1.7

7.2

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB.

—

-109.1

6.0

-106

—

dBm

dB

Band IV

Blocking Desired: (Rx + 200kHz) = -92 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 44.3 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -92 dBm

F1= 15 MHz

-4.7

3.2

—

dB

WCDMA Blocker ≥ - 32.3 dBm

Record SNR in 3.84 MHz BW

MMM7210 Data Sheet: Technical Data, Rev. 2.2

12

Freescale Semiconductor

Electrical Characteristics

Table 4. Top Level 3G Rx Performance Summary (continued)

Conditions

Parameter

Minimum Typical Maximum

Unit

Adjacent Channel Desired: (Rx + 200kHz) = -81 dBm

-4.7

1.3

12.8

—

dB

F1= 5 MHz

WCDMA Blocker ≥ - 40.3 dBm

Record SNR in 3.84 MHz BW

NarroQPSK, case25 (GTC 5) Desired: (Rx + 200kHz) = -85 dBm

and Blocking F1= 2.7 MHz

2.6

dB

GMSK Blocker ≥ - 45.3 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -91.5 dBm

F1= Rx 10Mhz (CW), -33.8 dBm

2.4

F2= Rx 20 MHz (WCDMA); -33.8 dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

–

-107.5

8.4

-105.7

—

dBm

dB

Band V

Blocking Desired: (Rx + 200kHz) = -92.4 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 46.7dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -92.4 dBm

F1= 15 MHz

-4.7

1.3

5.2

15.0

8.5

—

dB

WCDMA Blocker ≥ - 34.7 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -81.4 dBm

F1= 5 MHz

WCDMA Blocker ≥ - 42.7 dBm

Record SNR in 3.84 MHz BW

NarroQPSK, case25 (GTC 5) Desired: (Rx + 200kHz) = -83 dBm

and Blocking F1= 2.7 MHz

GMSK Blocker ≥ - 47.7 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -94.4 dBm

F1= Rx 10Mhz (CW), -36.7 dBm

4.3

F2= Rx 20 MHz (WCDMA); -36.7 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92.4 dBm

F1= Rx 15Mhz (CW) => - 31.7 dBm

-1.7

8.5

F2= Rx (15 MHz +300kHz) (CW); - 31.7 dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

—

-109.1

7.4

-106

—

dBm

dB

Band VI

Blocking Desired: (Rx + 200kHz) = -93.4 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 45.7 dBm

Record SNR in 3.84 MHz BW

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

13

Electrical Characteristics

Parameter

Table 4. Top Level 3G Rx Performance Summary (continued)

Conditions

Minimum Typical Maximum

Unit

Blocking Desired: (Rx + 200kHz) = -93.4 dBm

F1= 15 MHz

-4.7

1.3

3.6

13.5

4.3

—

dB

WCDMA Blocker ≥ - 33.7 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -82.4 dBm

F1= 5 MHz

dB

WCDMA Blocker ≥ - 41.7 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -94.4 dBm

F1= Rx 10Mhz (CW), -36.7 dBm

F2= Rx 20 MHz (WCDMA); -36.7 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92.4 dBm

F1= Rx 15Mhz (CW) => - 31.7dBm

-1.7

8.5

F2= Rx (15 MHz +300kHz) (CW); - 31.7 dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

—

-109.1

7.5

-106

—

dBm

dB

Band VIII

Blocking Desired: (Rx + 200kHz) = -91.6 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 46.6 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -92.6 dBm

F1= 15 MHz

-4.7

1.3

5.2

14.9

7.4

—

dB

WCDMA Blocker ≥ - 35.9 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -80.6 dBm

F1= 5 MHz

WCDMA Blocker ≥ - 42.9 dBm

Record SNR in 3.84 MHz BW

NarroQPSK, case25 (GTC Desired: (Rx + 200kHz) = -84.6 dBm

5)and Blocking F1= 2.8 MHz

GMSK Blocker ≥ - 43.9 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = --92.6 dBm

F1= Rx 10Mhz (CW), -37.9 dBm

5.4

F2= Rx 20 MHz (WCDMA); -37.9 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92.6 dBm

F1= Rx 15Mhz (CW) => - 35.9 dBm

-1.7

—

6.6

—

dB

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

-109.4

-106

dBm

MMM7210 Data Sheet: Technical Data, Rev. 2.2

14

Freescale Semiconductor

Electrical Characteristics

Table 4. Top Level 3G Rx Performance Summary (continued)

Conditions

Parameter

Minimum Typical Maximum

Unit

Band IX

Blocking Desired: (Rx + 200kHz) = -93.0 dBm

F1= 10 MHz

-4.7

1.3

6.2

3.1

—

dB

WCDMA Blocker ≥ - 45.3 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -93.0 dBm

F1= 15 MHz

dB

WCDMA Blocker ≥ - 33.3 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -93.0 dBm

F1= 5 MHz

13.7

3.0

WCDMA Blocker ≥ - 41.3 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -92.0 dBm

F1= Rx 10Mhz (CW), -35.2 dBm

F2= Rx 20 MHz (WCDMA); -35.2 dBm

Record SNR in 3.84 MHz BW

Cascaded IP2 Desired: (Rx + 200kHz) = -92 dBm

F1= Rx 15Mhz (CW)≥ - 34.3 dBm

-1.7

7.2

F2= Rx (15 MHz +300kHz) (CW); - 34.3 dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone.

—

-109.1

6.4

-106

—

dBm

dB

Band X

Blocking Desired: (Rx + 200kHz) = -91.5 dBm

F1= 10 MHz

-4.7

WCDMA Blocker ≥ - 43.8 dBm

Record SNR in 3.84 MHz BW

Blocking Desired: (Rx + 200kHz) = -91.5 dBm

F1= 15 MHz

-4.7

1.3

—

3.4

13.0

2.4

—

dB

WCDMA Blocker≥ - 31.8 dBm

Record SNR in 3.84 MHz BW

Adjacent Channel Desired: (Rx + 200kHz) = -80.5 dBm

F1= 5 MHz

WCDMA Blocker ≥ - 39.8 dBm

Record SNR in 3.84 MHz BW

Cascaded IP3 Desired: (Rx + 200kHz) = -91.5 dBm

F1= Rx 10Mhz (CW), -33.8 dBm

—

dB

F2= Rx 20 MHz (WCDMA); -33.8 dBm

Record SNR in 3.84 MHz BW

Sensitivity RF input is 1MHz offset tone. SNR = -7.7dB

-107.5

-105.7

dBm

1

These impedances are optimized for sensitivity. Deviation from these may reduce performance margins.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

15

Electrical Characteristics

5.2

GSM/EGPRS Receiver Performance

5.2.1

2G Rx Performance

Table 5. 2G Rx - All Bands

Conditions

Specification

Name/Parameter

Min

Typ

Max

Units

Amplitude

Imbalance

After autocal

-0.05

—

0.05

dB

Phase Imbalance

-0.5

—

0.5

Degree

Table 6. GSM Rx - Direct Lineup

Conditions

Specification

Name/Parameter

Min

Typ

Max

Units

GSM850

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

16

18

—

dB

600 kHz Blocking Interferer @600 kHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -46 dBm. Record resulting SNR.

9.50

15.00

14.60

—

dB

1.6 MHz Blocking Interferer @1.6 MHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -36 dBm. Record resulting SNR.

GSM900

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

16

18

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -46 dBm. Record resulting SNR.

9.50

9.70

15.10

12.80

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -36 dBm. Record resulting SNR.

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -101 dBm

CW, set interferer @ Pin = -25 dBm. Record resulting SNR.

9.50

400 kHz Edge

Blocking

Interferer @ 400 kHz = 8 PSK. Set On channel to -84 dBm

CW, set interferer @ Pin = -43 dBm. Record resulting SNR.

11.60

GSM1800

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

15.40

17.40

—

dB

MMM7210 Data Sheet: Technical Data, Rev. 2.2

16

Freescale Semiconductor

Electrical Characteristics

Table 6. GSM Rx - Direct Lineup (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -46 dBm. Record resulting SNR.

9.50

13.30

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -36 dBm. Record resulting SNR.

9.50

13.70

12.50

—

dB

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -101 dBm

CW, set interferer @ Pin = -28 dBm. Record resulting SNR.

GSM1900

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

15.40

17.40

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -46 dBm. Record resulting SNR.

9.50

12.90

13.30

12.30

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -102 dBm

CW, set interferer @ Pin = -36 dBm. Record resulting SNR.

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -101 dBm

CW, set interferer @ Pin = -28 dBm. Record resulting SNR.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

17

Electrical Characteristics

Table 7. GSM Rx - 3G Lineup

Conditions

Specification

Name/Parameter

Min

Typ

Max

Units

GSM850

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

11.80

16.80

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -32 dBm. Record resulting SNR.

9.50

22.90

21.80

16.20

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -22 dBm. Record resulting SNR.

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -12 dBm. Record resulting SNR.

GSM900

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

11.80

16.80

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -32 dBm. Record resulting SNR.

9.50

19.70

21.30

16.20

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -22 dBm. Record resulting SNR.

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -12 dBm. Record resulting SNR.

GSM1800

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

11.80

14.80

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -32 dBm. Record resulting SNR.

9.50

18.10

19.10

15.90

—

dB

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -22 dBm. Record resulting SNR.

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -12 dBm. Record resulting SNR.

GSM1900

Sensitivity

RF input amplitude = -100 dBm. RF input is +13 kHz above

RF channel frequency. Rx programmed to VLIF with LO at

+123 kHz. SNR is measured over -250 kHz to 250 kHz

bandwidth.

11.80

9.50

13.90

17.80

—

dB

600 kHz Blocking Interferer @ 600 kHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -32 dBm. Record resulting SNR.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

18

Freescale Semiconductor

Electrical Characteristics

Table 7. GSM Rx - 3G Lineup (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

1.6 MHz Blocking Interferer @ 1.6 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -22 dBm. Record resulting SNR.

9.50

18.70

—

dB

3.0 MHz Blocking Interferer @ 3.0 MHz = CW. Set On channel to -88 dBm

CW, set interferer @ Pin = -12 dBm. Record resulting SNR.

9.50

—

dB

5.3

WCDMA Transmitter Performance

3G General Tx Specifications

5.3.1

1

Table 8. Tx Cascaded Performance

Condition

800 MHz band selected

900 MHz band selected

UMTS Extended band

US PCS band selected

UMTS band selected

Parameter

Min

Typical

Maximum

Unit

RF Output Frequency Range

824

880

1710

1850

1920

—

849

915

MHz

1785

1910

1980

Minimum Output Power

Maximum Output power

Output Impedance¹

WCDMA Modulation (Vgc = 0.1 V)

W-CDMA Modulation (Vgc = 1.7 V)

Max. / Min. Output Power

—

9.5

—

-85

13

-70

—

dBm

Ω

50

—

ACLR @ 5 MHz Offset

W-CDMA Modulation, Pout = -25 to 8 dBm

W-CDMA Modulation, Pout = -35 to –25 dBm

-46

-42

-36

dBc

—

ACLR @ 10 MHz Offset

EVM²

W-CDMA Modulation, Pout = -15 to 8 dBm

W-CDMA Modulation, Pout = -25 to –15 dBm

-65

-55

-48

dBc

W-CDMA Modulation, Pout = -55 to 8 dBm

W-CDMA Modulation, Pout = -65 dBm

W-CDMA Modulation, Pout = -70 dBm

4

8

15

30

% rms

—

Tx Offset Noise - 2100 MHz³

12.5 MHz Offset Noise

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

-122

-128

-129

-136

-140

-119

-126

-134

-129

-133

dBm/Hz

+ 42 MHz Offset Noise

—

+ 190 MHz Offset Noise

Tx Offset Noise - 1900 MHz³

12.5 MHz Offset Noise

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

-122

-128

-132

-138

-115

-126

-129

-134

dBm/Hz

—

+ 80 MHz Offset Noise

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

19

Electrical Characteristics

Parameter

1

Table 8. Tx Cascaded Performance (continued)

Condition

Min

Typical

Maximum

Unit

Tx Offset Noise - 1700 MHz³

12.5 MHz Offset Noise

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

-120

-127

-133

-138

-115

-122

-126

-134

dBm/Hz

—

+ 95 MHz Offset Noise

Tx Offset Noise - 900 MHz³

12.5 MHz Offset Noise

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 8 dBm

W-CDMA Modulation, Pout = 0 dBm

-126

-129

-133

-137

-119

-126

-127

-132

dBm/Hz

—

45 MHz Offset Noise

Tx Offset Noise - 800 MHz³

12.5 MHz Offset Noise

W-CDMA Modulation, Pout = 7.5 dBm

W-CDMA Modulation, Pout = 0 dBm

W-CDMA Modulation, Pout = 7.5 dBm

W-CDMA Modulation, Pout = 0 dBm

-123

-129

-131

-137

-119

-126

-127

-132

dBm/Hz

45 MHz Offset Noise

Spectrum Emission

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = -10 to

8 dBm

-56

-62

-45

-49

-59

dBc/

30 KHz

2.5 MHz to 3.5MHz Offset⁴

—

850 and 900 bands - Pout = -10 to 7.5 dBm

Spectrum Emission

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = -10 to

8 dBm

dBc/

1 MHz

3.5 MHz to 7.5 MHz Offset⁴

850 and 900 bands - Pout = -10 to 7.5 dBm

Spectrum Emission

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = -10 to

8 dBm

dBc/

1 MHz

7.5 MHz to 8.5 MHz Offset⁴

850 and 900 bands - Pout = -10 to 7.5 dBm

Spectrum Emission

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = -10 to

8 dBm

dBc/

1 MHz

8.5 MHz to 12.5 MHz Offset⁴

850 and 900 bands - Pout = -10 to 7.5 dBm

Spurious—All Spurs, Except

Harmonics of RF Frequency

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = 8 dBm

850 and 900 bands - Pout = 7.5 dBm

—

-50

-10

dBm/

1 MHz

—

Spurious—Harmonics of RF

Frequency

W-CDMA Modulation

1700, 1900, and 2100 bands - Pout = 8 dBm

850 and 900 bands - Pout = 7.5 dBm

dBm/

1 MHz

1

Output externally matched. (A 50 ohm load must be presented to the Tx output for optimal ACLR performance).

Specifications listed are after a closed loop DCOC has been performed.

2

3

4

Varies 0.6 dB/dB with output power. (Valid over -5 to +5 dBm output power range).

Dominated by linearity and noise of the modulation scheme.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

20

Freescale Semiconductor

Electrical Characteristics

5.4

GSM/EGPRS Transmitter Performance

5.4.1

2G Tx Performance

Table 9. Tx Performance

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

GSM850

Tx Output Impedance

DVGA Mode

50 Ohm nominal

—

“2:1”

—

VSWR

Tx Output Power EDGE

DVGA Range

DVGA set to minimum attenuation

Across DVGA range

0

2.95

48

dBm

dB

42

2.2

45

3

DVGA Incremental Step

Size

4.5

dB

ACPR 8PSK 200 kHz

ACPR 8PSK 400 kHz

ACPR 8PSK 600 kHz

ACPR 8PSK 1800 kHz

ACPR 8PSK 3000 kHz

ACPR 8PSK 6000 kHz

MOD ORFS - Modulate with 8PSK random data

and measure ACPR at various offsets

—

-36

-70

-82

-85

-97

-103

—

-33

-65

-70

-73

-75

-81

-156

dBref/30 kHz

dBref/100 kHz

dBc/Hz

Phase noise 10 MHz

offset - 8PSK

*** Test condition for Phase noise 10MHz,

20MHz offset. ***

Phase noise 20 MHz

offset - 8PSK

—

5

—

1

-160

3

dBc/Hz

rms %

peak %

—

DVGA=bypassed, 0dB, -3dB, -6dB

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

3

12

Tx Output Impedance

GSM Bypass Mode

—

“2:1”

8

Tx Output Power GSM

—

dBm

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

21

Electrical Characteristics

Table 9. Tx Performance (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

ACPR GMSK 200 kHz

ACPR GMSK 400 kHz

ACPR GMSK 600 kHz

ACPR GMSK 1800 kHz

ACPR GMSK 3000 kHz

ACPR GMSK 6000 kHz

MOD ORFS - Modulate with GMSK random

data & measure ACPR at various offsets

—

-36

-70

-82

-85

-97

-103

—

-33

-65

-70

-73

-75

-81

-159

dBref/30 kHz

dBref/100 kHz

dBc/Hz

Phase noise 10 MHz

offset - GMSK

*** Test condition for Phase noise 10MHz,

20MHz offset. ***

Phase noise 20 MHz

offset - GMSK

—

0.6

2.5

-23

—

-166

2

dBc/Hz

rms deg

peak deg

dBc

DVGA=bypassed, 0dB, -3dB, -6dB

—

Global Phase Error in

GMSK Mode

Global Phase Error in

GMSK Mode

—

All output power levels

7

Spurious output -

Harmonics

-10

-77

Spurious output -

Non-harmonics (spurious

leakage level)

dBm

Performance into load

mismatch

—

–

—

TBD

–

—

GSM900

Tx Output Impedance

DVGA Mode

50 Ohm nominal

“2:1”

VSWR

Tx Output Power EDGE

DVGA Range

DVGA set to minimum attenuation

0

—

45

3

2.95

48

dBm

dB

—

42

2.2

DVGA Incremental Step

Size

Across DVGA range

4.5

dB

MMM7210 Data Sheet: Technical Data, Rev. 2.2

22

Freescale Semiconductor

Electrical Characteristics

Table 9. Tx Performance (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

ACPR 8PSK 200 kHz

ACPR 8PSK 400 kHz

ACPR 8PSK 600 kHz

ACPR 8PSK 1800 kHz

ACPR 8PSK 3000 kHz

ACPR 8PSK 6000 kHz

MOD ORFS - Modulate with 8PSK random data

and measure ACPR at various offsets

—

-36

-70

-82

-85

-97

-103

—

-33

-65

-70

-73

-75

-81

-156

dBref/30 kHz

dBref/100 kHz

dBc/Hz

Phase Noise 10 MHz

offset - 8PSK

*** Test condition for Phase noise 10MHz,

20MHz offset. ***

Phase Noise 20 MHz

offset - 8PSK

—

0.9

2.8

—

-160

3

dBc/Hz

rms %

peak %

—

DVGA=bypassed, 0dB, -3dB, -6dB

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

12

Tx Output Impedance

GSM Bypass Mode

“2:1”

Tx Output Power GSM

ACPR GMSK 200 kHz

ACPR GMSK 400 kHz

ACPR GMSK 600 kHz

ACPR GMSK 1800 kHz

ACPR GMSK 3000 kHz

ACPR GMSK 6000 kHz

5

—

-36

-70

-82

-85

-97

-103

—

8

dBm

MOD ORFS - Modulate with GMSK random

data and measure ACPR at various offsets

—

-33

-65

-70

-73

-75

-81

-159

dBref/30 kHz

dBref/100 kHz

dBc/Hz

Phase Noise 10 MHz

offset - GMSK

*** Test condition for Phase noise 10MHz,

20MHz offset. ***

Phase Noise 20 MHz

offset - GMSK

—

0.6

2.7

-24

—

-166

2

dBc/Hz

rms deg

peak deg

dBc

DVGA=bypassed, 0dB, -3dB, -6dB

Global Phase Error in

GMSK Mode

Global Phase Error in

GMSK Mode

7

Spurious output -

Harmonics

All output power levels

-10

-77

Spurious output -

Non-harmonics (spurious

leakage level)

dBm

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

23

Electrical Characteristics

Table 9. Tx Performance (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

Performance into load

mismatch

—

TBD

—

GSM1800

Tx Output Impedance

DVGA Mode

50 Ohm nominal

—

“2:1”

—

VSWR

Tx Output Power EDGE

DVGA Range

DVGA set to minimum attenuation

Across DVGA range

0

—

45

3

2.35

48

dBm

dB

42

2.2

DVGA Incremental Step

Size

4.5

dB

ACPR 8PSK 200 kHz

ACPR 8PSK 400 kHz

ACPR 8PSK 600 kHz

ACPR 8PSK 1800 kHz

ACPR 8PSK 6000 kHz

MOD ORFS - Modulate with 8PSK random data

and measure ACPR at various offsets

—

-37

-68

-77

-82

-96

—

-33

-65

-70

-75

-156

dBref/30 kHz

dBref/100 kHz

dBc/Hz

** Test condition for Phase noise 20MHz offset

**

DVGA=bypassed, 0dB

Phase Noise 20 MHz

offset - 8PSK

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

—

1.7

5

3

rms %

peak %

—

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

12

Tx Output Impedance

GSM Bypass Mode

—

“2:1”

Tx Output Power GSM

ACPR GMSK 200 kHz

ACPR GMSK 400 kHz

ACPR GMSK 600 kHz

ACPR GMSK 1800 kHz

ACPR GMSK 6000 kHz

5

—

8

dBm

MOD ORFS - Modulate with GMSK random

data and measure ACPR at various offsets

—

-37

-68

-72

-82

-96

—

-33

-65

-70

-75

-160

dBref/30 kHz

dBref/100 kHz

dBc/Hz

** Test condition for Phase noise 20MHz offset.

**

DVGA=bypassed, 0dB

Phase Noise 20 MHz

offset - GMSK

Global Phase Error in

GMSK Mode

—

0.6

2.7

3

rms deg

Global Phase Error in

GMSK Mode

10

peak deg

MMM7210 Data Sheet: Technical Data, Rev. 2.2

24

Freescale Semiconductor

Electrical Characteristics

Table 9. Tx Performance (continued)

Specification

Name/Parameter

Conditions

All output power levels

Min

Typ

Max

Units

Spurious output -

Harmonics

—

-27

-10

-77

dBc

Spurious output -

Non-harmonics (spurious

leakage level)

All output power levels

—

dBm

—

Performance into load

mismatch

TBD

—

GSM1900

Tx Output Impedance

DVGA Mode

50 Ohm nominal

—

“2:1”

VSWR

Tx Output Power EDGE

DVGA Range

DVGA set to minimum attenuation

0

2.35

48

dBm

dB

42

2.2

45

3

DVGA Incremental Step

Size

Across DVGA range

4.5

dB

ACPR 8PSK 200 kHz

ACPR 8PSK 400 kHz

ACPR 8PSK 600 kHz

ACPR 8PSK 1800 kHz

ACPR 8PSK 6000 kHz

MOD ORFS - Modulate with 8PSK random data

and measure ACPR at various offsets

—

-36

-69

-77

-81

-94

—

-33

-65

-70

-75

-156

dBref/30 kHz

dBref/100 kHz

dBc/Hz

** Test condition for Phase noise 20MHz offset.

**

DVGA=bypassed, 0dB

Phase Noise 20 MHz

offset - 8PSK

EVM in 8PSK Mode

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

—

1.5

6

3

rms %

peak %

—

DVGA Backoff = 0 dB. System corrected but

without remodulation effects

12

—

Tx Output Impedance

GSM Bypass Mode

“2:1”

Tx Output Power GSM

ACPR GMSK 200 kHz

ACPR GMSK 400 kHz

ACPR GMSK 600 kHz

ACPR GMSK 1800 kHz

ACPR GMSK 6000 kHz

5

—

8

dBm

Modulate with GMSK random data and measure

ACPR at various offsets

—

-36

-69

-77

-81

-94

—

-33

-65

-70

-75

-160

dBref/30 kHz

dBref/100 kHz

dBc/Hz

** Test condition for Phase noise 20MHz offset.

**

DVGA=bypassed, 0dB

Phase Noise 20 MHz

offset - GMSK

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

25

Electrical Characteristics

Table 9. Tx Performance (continued)

Specification

Name/Parameter

Conditions

Min

Typ

Max

Units

Global Phase Error in

GMSK Mode

—

0.8

2

rms deg

Global Phase Error in

GMSK Mode

—

2.9

-34

-77

10

-10

peak deg

dBc

Spurious output -

Harmonics

Spurious output -

Non-harmonics (spurious

leakage level)

dBm

—

Performance into load

mismatch

—

TBD

—

MMM7210 Data Sheet: Technical Data, Rev. 2.2

26

Freescale Semiconductor

MMM7210 Applications Circuit

6 MMM7210 Applications Circuit

D D E I G S

( 8 D G n d

n s p ) i 4 9 ( n d G A

1 3 5

) s n i

p

D

A _ V D

E P M F u s e _

9 2

c f I d V d

1 6 1

_ 1 i o

_ 0 i o

n

D b G p

1 4 8

_ b p y p 4 d d V 1

6 3

8 3

D b G p

1 3 7

R x M o

_ b y p 1 d p d 2 V

_ b p y p 4 d d V 2

1 8

T x M o ₁n _{5 4}

M

B D

1 0 7

3 9

2 1

e

o d a c n M S

1 6 0

t _ 1

d D V i g d O u

H s s F r m

1 2 4

H s s C l k

1 2 3

t _ 0

8 8

9 0

H s s D a t a

1 2 5

s t _ 3 n a A T e

d D V i g d I n

6 1

3 8

6 2

4 0

s t _ 2 n a A T e

s t _ 1 n a A T e

s t _ 0 n a A T e

p y B g e R T x

x C p c c V T

2 3

3 2

f

C d a p c C c A o d A

W c d m a T x Z e

T x D a c R e

1 4 4

1 6 7

V c c T x 1

1 3 4

9 4

o r

9 8

V c c T x 2

B Y P R E F _ ₂

2 5

7 5

K L _ S C F

8 7

9 7

5 1

6 9

F

a _ b S o r

C

O X C T V d d

1

0

S F

2

1

I n _ V d d

5 2

5 8

7 9

0

c I a n P

a m V r

c t t e e t d o A u

F r o m P

1 5 6

9 6

s i a V b P G A 3

p & a r m P A V 2 G T o

p

Figure 2. MMM7210 Applications Schematic

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

27

MMM7210 Applications Circuit

Table 10. MMM7210 Applications Schematic Bill of Materials

Reference

Designator

Value

Description

C1

C2

0.1uF

33pF

1.0uF

0.1uF

1.0uF

33pF

0.1uF

1.0uF

0.1uF

33pF

1.0uF

0.1uF

33pF

1.0pF

DNP

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, 1.0PF, 16V, Ceramic, 0402

CAP, DNP, 16V, Ceramic, 0402

IND, 22NH, 2%, 400mA, 0402

IND, 18NH, 2%, 560mA, 0402

CAP, 100PF, 16V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

IND, 10NH, 2%, 400mA, 0402

IND, 5.6NH, 2%, 800mA, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, DNP, 16V, Ceramic, 0402

IND, 4.7NH, 2%, 400mA, 0402

RES, 0ohm, 1/16W, 5%, 0402

C3

C4

C5

C6

C7

C8

C9

C10

C11

C12

C13

C14

C15

C16

C27

¹C28

¹C29

C30

¹L6

22nH

18nH

100pF

0.1uF

33pF

10nH

5.6nH

33pF

DNP

¹L7

C31

C32

C33

¹L8

¹L9

¹C34

¹C35

¹C36

¹L10

¹L11

DNP

4.7nH

0ohm

MMM7210 Data Sheet: Technical Data, Rev. 2.2

28

Freescale Semiconductor

MMM7210 Applications Circuit

Table 10. MMM7210 Applications Schematic Bill of Materials (continued)

Reference

Designator

Value

Description

¹C37

¹C38

¹C39

C40

C41

C42

¹L12

¹L13

¹C43

¹C44

¹C45

C46

C47

C48

C49

C50

C51

C52

C53

C54

R1

33pF

DNP

CAP, 33PF, 16V, Ceramic, 0402

CAP, DNP, 16V, Ceramic, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, DNP, 16V, Ceramic, 0402

IND, 3.3NH, 2%, 400mA, 0402

RES, 0ohm, 1/16W, 5%, 0402

CAP, 33PF, 16V, Ceramic, 0402

CAP, DNP, 16V, Ceramic, 0402

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 0.1UF, 16V, Ceramic, 0402

CAP, DNP, Ceramic, 0402

DNP

33pF

0.1uF

DNP

3.3nH

0ohms

33pF

DNP

1.0uF

0.1uF

DNP

CAP, DNP, Ceramic, 0402

1.0uF

0.01uF

200ohms

0ohms

10 kohms

CAP, 1.0UF, 6.3V, Ceramic, 0402

CAP, 0.01UF, 16V, Ceramic, 0402

RES, 200ohm, 1/16W, 5%, 0402

RES, 0ohm, 1/16W, 5%, 0402

RES, 10 kohm, 1/16W, 5%, 0402

¹R2

¹R3

¹R4

¹R5

R6

1

Final value may differ upon MMM7210 matching optimization.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

29

Package Information and Pinout

7 Package Information and Pinout

The MMM7210 is a 9.25 mm × 7.65 mm package and is shown in Figure 3 and Figure 4. Figure 5 shows

the pinout for the MMM7210 and Figure 6 shows the pin map.

Figure 3. MMM7210 Package Drawing (Top View)

MMM7210 Data Sheet: Technical Data, Rev. 2.2

30

Freescale Semiconductor

Package Information and Pinout

Figure 4. MMM7210 Package Drawing (Bottom View)

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

31

Package Information and Pinout

Figure 5. MMM7210 Pinout (Top View)

MMM7210 Data Sheet: Technical Data, Rev. 2.2

32

Freescale Semiconductor

NOTES

Figure 6. MMM7210 Pin Map (Top View)

8 Product Documentation

This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.

Definitions of these types are available at: http://www.freescale.com.

Table 11 summarizes revisions made to this document since Rev. 2.1 was released.

Table 11. Revision History

Location

Revision

Introduction

Provided more detailed introduction. Updates to block diagram.

MMM7210 Data Sheet: Technical Data, Rev. 2.2

Freescale Semiconductor

33

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Document Number: MMM7210

Rev. 2.2

07/2010


型号：	MMM7210BR2
厂家：	NXP
描述：	IC,RF MODULATOR/DEMODULATOR,CMOS,LGA,PLASTIC
文件：	总34页 (文件大小：722K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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