MPXV12DP_技术文档

Pressure

MPX12

Rev 11, 07/2009

Freescale Semiconductor

10 kPa Uncompensated

Silicon Pressure Sensors

MPX12

Series

The MPX12 series silicon piezoresistive pressure sensors provide a very

accurate and linear voltage output, directly proportional to the applied

pressure. This standard, low cost, uncompensated sensor permits

manufacturers to design and add their own external temperature

compensating and signal conditioning networks. Compensation techniques

are simplified because of the predictability of Freescale's single element

strain gauge design.

0 to 10 kPa (0 to 1.45 psi)

55 mV Full Scale Span

(Typical)

Application Examples

• Air Movement Control

• Environmental Control Systems

• Level Indicators

Features

• Low Cost

• Leak Detection

• Patented Silicon Shear Stress Strain Gauge Design

• Ratiometric to Supply Voltage

• Easy to Use Chip Carrier Package Options

• Gauge Options

• Medical Instrumentation

• Industrial Controls

• Pneumatic Control Systems

• Robotics

• Durable Epoxy Package

ORDERING INFORMATION

# of Ports

Single

Pressure Type

Package

Options

Case

No.

Device

Marking

Device Name

None

Dual

Gauge

Differential

Absolute

Unibody Package (MPX12 Series)

MPX12D

Tray

344

•

MPX12DP

MPX12GP

MPX12DP

MPX12GP

344C

344B

•

Small Outline Package (MPXV12 Series)

MPXV12DP

MPXV12GP

MPXV12GW

Tray

Rail

1351

1369

1735

1560

•

MPXV12GP

•

MPXV12GW6U

MPXV12GW7U

MPAK Package (MPXM12 Series)

MPXM12GS

Rail

1320A

•

MPXM12GST1

Tape & Reel

Pressure

UNIBODY PACKAGES

MPX12D

MPX12GP

MPX12DP

CASE 344-15

CASE 344B-01

CASE 344C-01

SMALL OUTLINE PACKAGES

MPXV12GW6U

CASE 1735-02

MPXV12GW7U

CASE 1560-02

MPXV12DP

CASE 1351-01

MPXV12GP

CASE 1369-01

MPAK PACKAGE

MPXM12GS/GST1

CASE 1320A-02

MPX12

Sensors

Freescale Semiconductor

2

Pressure

Operating Characteristics

Table 1. Operating Characteristics (V_S= 3.0 Vdc, T_A= 25°C unless otherwise noted, P1 > P2)

Characteristic

Differential Pressure Range⁽¹⁾

Symbol

P_OP

V_S

Min

0

Typ

—

Max

Unit

kPa

10

6.0

—

Supply Voltage⁽²⁾

—

3.0

6.0

55

Vdc

Supply Current

I_o

—

mAdc

mV

Full Scale Span⁽³⁾

V_FSS

V_off

45

70

Offset⁽⁴⁾

0

20

35

mV

Sensitivity

ΔV/ΔP

—

5.5

—

mV/kPa

%V_FSS

%V_FSS/°C

μV/°C

%Z_in/°C

Ω

Linearity

–0.5

—

5.0

—

Pressure Hysteresis⁽⁶⁾(0 to 10 kPa)

Temperature Hysteresis (–40°C to +125°C)

Temperature Coefficient of Full Scale Span

Temperature Coefficient of Offset

Temperature Coefficient of Resistance

Input Impedance

—

±0.1

±0.5

—

TCV_FSS

TCV_off

TCR

Z_in

–0.22

—

–0.16

—

±15

—

0.21

400

750

—

0.27

550

1250

—

Output Impedance

Z_out

t_R

—

Ω

Response Time⁽⁵⁾(10% to 90%)

Warm-Up Time⁽⁶⁾

1.0

20

ms

—

ms

Offset Stability⁽⁷⁾

—

±0.5

—

%V_FSS

1. 1.0 kPa (kiloPascal) equals 0.145 psi.

2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional

error due to device self-heating.

3. Full Scale Span (V_FSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the

minimum related pressure.

4. Offset (V_OFF) is defined as the output voltage at the minimum rated pressure.

5. Response Time is defined as the time form the incremental change in the output to go from 10% to 90% of its final value when subjected to

a specified step change in pressure.

6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure is stabilized.

7. Offset stability is the product’s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.

MPX12

Sensors

Freescale Semiconductor

3

Pressure

Maximum Ratings

Table 2. Maximum Ratings⁽¹⁾

Rating

Symbol

P_MAX

P_BURST

T_STG

Value

75

Unit

kPa

°C

Maximum Pressure (P1 > P2)

Burst Pressure (P1 > P2)

Storage Temperature

100

–40 to +125

Operating Temperature

T_A

°C

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.

+V_S

3

2

4

+V_OUT

Sensing

Element

–V_OUT

1

GND

Figure 1. Uncompensated Pressure Sensor Schematic

Voltage Output versus Applied Differential Pressure

The output voltage of the differential or gauge sensor

increases with increasing pressure applied to the pressure

side (P1) relative to the vacuum side (P2). Similarly, output

voltage increases as increasing vacuum is applied to the

vacuum side (P2) relative to the pressure side (P1).

MPX12

Sensors

Freescale Semiconductor

4

Pressure

Temperature Compensation

Figure 2 shows the typical output characteristics of the

MPX12 series over temperature.

LINEARITY

Linearity refers to how well a transducer's output follows

the equation: V_OUT= V_OFF+ sensitivity x P over the operating

pressure range (Figure 3). There are two basic methods for

calculating nonlinearity: (1) end point straight line fit or (2) a

least squares best line fit. While a least squares fit gives the

“best case” linearity error (lower numerical value), the

calculations required are burdensome.

Conversely, an end point fit will give the “worst case” error

(often more desirable in error budget calculations) and the

calculations are more straightforward for the user.

Freescale’s specified pressure sensor linearities are based

on the end point straight line method measured at the

midrange pressure.

Because this strain gauge is an integral part of the silicon

diaphragm, there are no temperature effects due to

differences in the thermal expansion of the strain gauge and

the diaphragm, as are often encountered in bonded strain

gauge pressure sensors. However, the properties of the

strain gauge itself are temperature dependent, requiring that

the device be temperature compensated if it is to be used

over an extensive temperature range.

Temperature compensation and offset calibration can be

achieved rather simply with additional resistive components, or

by designing your system using the MPX2010D series sensor.

Several approaches to external temperature

compensation over both –40 to +125°C and 0 to +80°C

ranges are presented in Applications Note AN840.

80

+25°C

V_S= 3 V_DC

70

P1 > P2

-40°C

60

50

Span

Range

(Typ)

40

30

20

10

+125°C

Offset

(Typ)

0

PSI

kPa

0

0.3

2.0

0.6

4.0

0.9

6.0

1.2

8.0

1.5

10

Pressure Differential

Figure 2. Output vs. Pressure Differential

80

70

60

50

40

30

20

10

0

Linearity

Actual

Span

(V_FSS

)

Theoretical

Offset

(V_OFF

)

0

Max

P_OP

Pressure (kPa)

Figure 3. Linearity Specification Comparison

MPX12

Sensors

Freescale Semiconductor

5

Pressure

Stainless

Steel Cap

Die

Gel Die Coat

P1

Thermoplastic

Wire Bond

Case

Lead Frame

P2

Die Bond

Differential Sensing

Element

Figure 4. Cross-Sectional Diagram (not to scale)

Figure 4 illustrates the differential/gauge die. A gel isolates

the die surface and wire bonds from the environment, while

allowing the pressure signal to be transmitted to the silicon

diaphragm.

pressure media. Media other than dry clean air may have

adverse effects on sensor performance and long term

reliability. Contact the factory for information regarding media

compatibility in your application.

Operating characteristics, internal reliability and

qualification tests are based on use of dry clean air as the

PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE

Freescale designates the two sides of the pressure sensor

as the Pressure (P1) side and the Vacuum (P2) side. The

Pressure (P1) side is the side containing gel which isolates

the die from the environment. Freescale’s MPx12 series is

designed to operate with positive differential pressure

applied, P1 > P2.

Pressure (P1) Side

Part Number

MPX12D

Case Type

Identifier

344

344C

344B

1351

1369

1735

1560

1320A

Stainless Steel Cap

Side with Part Marking

Side with Port Attached

Side with Part Marking

Side with Port

MPX12DP

MPX12GP

The Pressure (P1) side may be identified by using the

following table

MPXV12DP

MPXV12GP

MPXV12GW6U

MPXV12GW7U

MPXM12GS/GST1

Side with Port

Side with Port Attached

MPX12

Sensors

6

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

C

R

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION –A– IS INCLUSIVE OF THE MOLD

STOP RING. MOLD STOP RING NOT TO EXCEED

16.00 (0.630).

M

Z

1

4

2

3

INCHES

DIM MIN MAX

MILLIMETERS

B

–A–

MIN

15.11

13.06

5.08

MAX

16.00

13.56

5.59

A

B

C

D

F

0.595

0.514

0.200

0.016

0.048

0.630

0.534

0.220

0.020

0.064

N

L

1

2

3

4

PIN 1

0.41

1.22

0.51

1.63

–T–

G

J

L

M

N

R

Y

Z

0.100 BSC

2.54 BSC

SEATING

PLANE

F

0.014

0.695

0.016

0.725

0.36

17.65

0.40

18.42

G

J

F

Y

30 NOM

D ^{4 PL}

0.475

0.430

0.048

0.106

0.495

0.450

0.052

0.118

12.07

10.92

1.22

12.57

11.43

1.32

DAMBAR TRIM ZONE:

THIS IS INCLUDED

WITHIN DIM. “F” 8 PL

M

T A

0.136 (0.005)

2.68

3.00

STYLE 1:

PIN 1. GROUND

STYLE 2:

PIN 1. V

STYLE 3:

PIN 1. GND

CC

2. + OUTPUT

3. + SUPPLY

4. – OUTPUT

2. – SUPPLY

3. + SUPPLY

4. GROUND

2. –VOUT

3. VS

4. +VOUT

CASE 344-15

ISSUE AA

UNIBODY PACKAGE

NOTES:

–A–

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5, 1982.

2. CONTROLLING DIMENSION: INCH.

–T–

U

L

R

INCHES

DIM MIN MAX

MILLIMETERS

H

MIN

MAX

29.85

18.16

8.26

A

B

C

D

F

1.145 1.175 29.08

0.685 0.715 17.40

N

B

PORT #1

POSITIVE

PRESSURE

(P1)

0.305 0.325

0.016 0.020

0.048 0.064

0.100 BSC

7.75

0.41

1.22

–Q–

0.51

1.63

G

H

J

2.54 BSC

0.182 0.194

0.014 0.016

4.62

0.36

4.93

0.41

18.42

7.62

11.18

4.04

6.35

6.10

K

L

N

P

Q

R

S

U

0.695 0.725 17.65

0.290 0.300 7.37

0.420 0.440 10.67

1

2

3 4

PIN 1

K

0.153 0.159

0.230 0.250

0.220 0.240

0.910 BSC

3.89

5.84

5.59

–P–

S

M

S

0.25 (0.010)

T Q

J

F

23.11 BSC

G

C

D 4 PL

M

S

Q

0.13 (0.005)

T S

STYLE 1:

PIN 1. GROUND

2. + OUTPUT

3. + SUPPLY

4. - OUTPUT

CASE 344B-01

ISSUE B

UNIBODY PACKAGE

MPX12

Sensors

Freescale Semiconductor

7

Pressure

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–A–

U

V

PORT #1

W

L

R

H

INCHES

MILLIMETERS

PORT #2

DIM

A

B

C

D

F

MIN

MAX

1.175

0.715

0.435

0.020

0.064

MIN

29.08

17.40

10.29

0.41

MAX

29.85

18.16

11.05

0.51

PORT #1

PORT #2

VACUUM

(P2)

POSITIVE PRESSURE

(P1)

1.145

0.685

0.405

0.016

0.048

N

–Q–

1.22

1.63

G

H

J

K

L

N

P

Q

R

S

0.100 BSC

2.54 BSC

SEATING

PLANE

SEATING

PLANE

B

0.182

0.014

0.695

0.290

0.420

0.153

0.063

0.220

0.194

0.016

0.725

0.300

0.440

0.159

0.083

0.240

4.62

0.36

17.65

7.37

10.67

3.89

1.60

5.59

4.93

0.41

18.42

7.62

11.18

4.04

2.11

1

2

3 4

PIN 1

K

–P–

M

S

0.25 (0.010)

T

Q

–T–

S

F

J

6.10

G

C

U

V

W

0.910 BSC

23.11 BSC

D ^{4 PL}

0.248

0.310

0.278

0.330

6.30

7.87

7.06

8.38

M

S

0.13 (0.005)

T

S

Q

STYLE 1:

PIN 1. GROUND

2. + OUTPUT

3. + SUPPLY

4. – OUTPUT

CASE 344C-01

ISSUE B

UNIBODY PACKAGE

MPX12

Sensors

Freescale Semiconductor

8

Pressure

PACKAGE DIMENSIONS

CASE 1351-01

ISSUE A

SMALL OUTLINE PACKAGE

MPX12

Sensors

Freescale Semiconductor

9

Pressure

PACKAGE DIMENSIONS

CASE 1351-01

ISSUE A

SMALL OUTLINE PACKAGE

MPX12

10

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

2 PLACES 4 TIPS

0.008 (0.20) C A

B

E

A

GAGE

PLANE

e

5

4

1

e/2

.014 (0.35)

θ

L

A1

D

F

DETAIL G

8

NOTES:

1. CONTROLLING DIMENSION: INCH.

2. INTERPRET DIMENSIONS AND TOLERANCES PER

ASME Y14.5M, 1994.

3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE

MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR

PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152)

PER SIDE.

4. DIMENSION "b" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM.

8X b

0.004 (0.1)

M

C

A

B

E1

B

INCHES

DIM MIN MAX

0.300

A1 0.002

MILLIMETERS

MIN

7.11

MAX

7.62

0.25

N

T

∅

A

0.330

0.010

0.042

0.485

K

0.05

0.96

b

D

E

0.038

0.465

0.717 BSC

1.07

12.32

11.81

18.21 BSC

E1 0.465

0.485

11.81

2.54 BSC

12.32

A

M

e

F

K

L

M

N

P

T

θ

0.100 BSC

0.245

0.120

0.061

0.270

0.080

0.009

0.115

0˚

0.255

0.130

0.071

0.290

0.090

0.011

0.125

7˚

6.22

3.05

1.55

6.86

2.03

0.23

2.92

0˚

6.47

3.30

1.80

7.36

2.28

0.28

3.17

7˚

8X

0.004 (0.1)

P

DETAIL G

SEATING

PLANE

C

CASE 1369-01

ISSUE O

SMALL OUTLINE PACKAGE

MPX12

Sensors

Freescale Semiconductor

11

Pressure

PACKAGE DIMENSIONS

CASE 1735-02

ISSUE B

SMALL OUTLINE PACKAGE

MPX12

12

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1735-02

ISSUE B

SMALL OUTLINE PACKAGE

MPX12

13

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1735-02

ISSUE B

SMALL OUTLINE PACKAGE

MPX12

14

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1560-03

ISSUE D

SMALL OUTLINE PACKAGE

MPX12

15

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1560-03

ISSUE D

SMALL OUTLINE PACKAGE

MPX12

16

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1560-03

ISSUE D

SMALL OUTLINE PACKAGE

MPX12

17

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1320A-02

ISSUE A

MPAK PACKAGE

MPX12

18

Sensors

Freescale Semiconductor

Pressure

PACKAGE DIMENSIONS

CASE 1320A-02

ISSUE A

MPAK PACKAGE

MPX12

19

Sensors

Freescale Semiconductor

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MPX12

Rev. 11

07/2009


型号：	MPXV12DP
厂家：	NXP
描述：	DIFFERENTIAL, PEIZORESISTIVE PRESSURE SENSOR, 0-1.45Psi, 20-75mV, SQUARE, SURFACE MOUNT, PLASTIC, SOP PACKAGE-8 传感器换能器
文件：	总20页 (文件大小：360K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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