MRF21045R3 [NXP]
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR;
| 型号： | MRF21045R3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
MRF21045LR3
MRF21045LSR3
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
2170 MHz, 45 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — -37.5 dBc
ACPR — -41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
CASE 465E-04, STYLE 1
NI-400
MRF21045LR3
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
CASE 465F-04, STYLE 1
NI-400S
MRF21045LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
-0.5, +15
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
105
0.60
Watts
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
θ
JC
1.65
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 9
Motorola, Inc. 2004
For More Information On This Product,
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V = 0 Vdc, I = 100 µAdc)
V
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
I
I
DSS
GSS
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
V
V
2
3
—
3.9
0.19
3
4
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 100 µAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 500 mAdc)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1 Adc)
V
—
—
0.21
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 1 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
C
rss
—
1.8
—
pF
(V = 28 Vdc, V = 0, f = 1 MHz)
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability
on CCDF.
Common-Source Amplifier Power Gain
(V = 28 Vdc, P = 10 W Avg., I = 500 mA, f1 = 2112.5 MHz,
DQ
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
G
13.5
21
15
—
—
dB
%
ps
DD
out
Drain Efficiency
η
23.5
-37.5
(V = 28 Vdc, P = 10 W Avg., I = 500 mA, f1 = 2112.5 MHz,
DQ
DD
out
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
IM3
—
-35
dBc
(V = 28 Vdc, P = 10 W Avg., I = 500 mA, f1 = 2112.5 MHz,
DQ
DD
out
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.)
Adjacent Channel Power Ratio
ACPR
—
—
-41
-12
-38
-9
dBc
dB
(V = 28 Vdc, P = 10 W Avg., I = 500 mA, f1 = 2112.5 MHz,
DD
out
DQ
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.)
Input Return Loss
IRL
(V = 28 Vdc, P = 10 W Avg., I = 500 mA, f1 = 2112.5 MHz,
DD
out
DQ
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V = 28 Vdc, P = 45 W CW, I = 500 mA, f = 2170 MHz
DQ
DD
out
VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
MRF21045LR3 MRF21045LSR3
2
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) — continued
Two-Tone Common-Source Amplifier Power Gain
G
—
14.9
—
dB
ps
(V = 28 Vdc, P = 45 W PEP, I = 500 mA,
DD
out
DQ
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two-Tone Drain Efficiency
η
—
—
—
—
36
-30
-12
50
—
—
—
—
%
dBc
dB
W
(V = 28 Vdc, P = 45 W PEP, I = 500 mA,
DQ
DD
out
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
IMD
IRL
(V = 28 Vdc, P = 45 W PEP, I = 500 mA,
DQ
DD
out
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two-Tone Input Return Loss
(V = 28 Vdc, P = 45 W PEP, I = 500 mA,
DQ
DD
out
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P
, 1 dB Compression Point
out
P1dB
(V = 28 Vdc, I
= 500 mA, f = 2170 MHz)
DD
DQ
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
3
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Freescale Semiconductor, Inc.
V
GG
R3
R4
R1
R2
B1
V
DD
L1
+
+
+
C5
C4
C3
C2
C7
C8
C9
C10
C11
Z10
Z5
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
C1
C6
DUT
Z1, Z9
0.750″ x 0.084″ Transmission Line
0.160″ x 0.084″ Transmission Line
1.195″ x 0.176″ Transmission Line
0.125″ x 0.320″ Transmission Line
1.100″ x 0.045″ Transmission Line
0.442″ x 0.650″ Transmission Line
0.490″ x 0.140″ Transmission Line
0.540″ x 0.084″ Transmission Line
0.825″ x 0.055″ Transmission Line
Board
PCB
0.030″ Glass Teflon ,
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Keene GX-0300-55-22, ε = 2.55
Etched Circuit Boards
MRF21045 Rev. 3, CMR
r
Figure 1. MRF21045LR3(LSR3) Test Circuit Schematic
Table 1. MRF21045LR3(LSR3) Component Designations and Values
Description
Designators
B1
Short Ferrite Bead, Fair Rite, #2743019447
43 pF Chip Capacitors, ATC #100B430JCA500X
5.6 pF Chip Capacitor, ATC #100B5R6JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100″ ID, Motorola
C1, C2, C6
C7
C3, C9
C4, C10
C5
C8
C11
L1
N1, N2
R1
Type N Flange Mounts, Omni Spectra #3052-1648-10
1.0 kΩ, 1/8 W Chip Resistor
R2
180 kΩ, 1/8 W Chip Resistor
R3, R4
10 Ω, 1/8 W Chip Resistors
MRF21045LR3 MRF21045LSR3
4
MOTOROLA RF DEVICE DATA
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C8
C7
R1
R2
B1 R3
C2
L1
C9
R4
C10
C3
C4
C5
C1
C11
C6
WB1
WB2
MRF21045
Figure 2. MRF21045LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
5
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TYPICAL CHARACTERISTICS
30
25
−25
−30
−25
−30
−35
−40
45
40
V
= 28 Vdc, I = 500 mA
DQ
f1 = 2135 MHz, f2 = 2145 MHz
DD
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
35
30
20
15
−35
−40
G
ps
25
20
−45
−50
−55
−60
−65
3rd Order
5th Order
η
10
5
−45
−50
−55
15
10
IM3
η
V = 28 Vdc, I = 500 mA
DD DQ
f1 = 2135 MHz, f2 = 2145 MHz
ACPR
7th Order
0
5
0.5
1
10
, OUTPUT POWER (WATTS Avg.) W−CDMA
20
3
4
6
8
10
, OUTPUT POWER (WATTS) PEP
out
30
50 60
P
P
out
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 4. Intermodulation Distortion Products
versus Output Power
−25
−30
28
26
24
22
20
−10
−15
−20
−25
−30
IRL
η
−35
−40
−45
−50
I
= 300 mA
700 mA
DQ
V
= 28 Vdc, P = 10 W (Avg.)
out
= 500 mA
DD
I
DQ
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
600 mA
400 mA
18
16
14
−35
−40
−45
IM3
V
= 28 Vdc
DD
ACPR
f1 = 2135 MHz
f2 = 2145 MHz
500 mA
G
ps
4
6
8
10
30
50 60
2090
2110
2130
2150
2170
2190
P
, OUTPUT POWER (WATTS) PEP
out
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2-Carrier W-CDMA Broadband
Performance
15.5
15
60
50
40
30
42
41
40
39
38
37
36
−24
−25
−26
−27
−28
−29
−30
G
ps
η
IMD
14.5
14
13.5
13
20
10
η
V
I
= 28 Vdc
= 500 mA
I
= 500 mA
DD
DQ
P = 45 W (PEP)
out
f1 = 2135 MHz, f2 = 2145 MHz
35
34
−31
−32
DQ
f = 2170 MHz
12.5
0
2
4
6
8
10
30
50 60
24
25
26
27
28
29
P
, OUTPUT POWER (WATTS)
out
V
, DRAIN SUPPLY (V)
DD
Figure 7. CW Performance
Figure 8. Two-Tone Intermodulation
Distortion and Drain Efficiency versus Drain
Supply
MRF21045LR3 MRF21045LSR3
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
16
40
−10
−15
IRL
35
I
= 700 mA
DQ
η
15.5
30
−20
−25
−30
600 mA
500 mA
V
P
= 28 Vdc
= 45 W (PEP)
DD
out
25
20
15
15
I
= 500 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
DQ
400 mA
300 mA
6
14.5
14
IMD
V
= 28 Vdc
DD
−35
f1 = 2135 MHz
f2 = 2145 MHz
G
ps
10
−40
4
8
10
30
50 60
2090
2110
2130
2150
2170
2190
P
, OUTPUT POWER (WATTS) PEP
out
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
Figure 9. Two-Tone Power Gain versus
Output Power
0
−25
−30
−35
−40
f1
f2
3.84 MHz BW 3.84 MHz BW
3rd Order
−10
−20
V
P
I
= 28 Vdc
= 45 W (PEP)
DD
out
−ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
= 500 mA
−30
−40
DQ
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
5th Order
−45
−50
−55
−50
−60
−70
7th Order
−IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
−20
−15
−10
−5
0
5
10
15
20
0.1
1
10
30
f, FREQUENCY (MHz)
Df, TONE SEPARATION (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
Figure 11. Intermodulation Distortion
Products versus Two-Tone Spacing
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
7
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f = 2110 MHz
f = 2170 MHz
Z
load
Z
source
f = 2170 MHz
f = 2110 MHz
Z = 25 Ω
o
V
= 28 Vdc, I = 500 mA, P = 10 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
2110
2140
2170
18.88 - j8.86
19.80 - j9.93
19.68 - j10.44
3.11 - j4.18
3.09 - j3.87
3.12 - j3.72
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
load
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21045LR3 MRF21045LSR3
8
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
9
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Freescale Semiconductor, Inc.
NOTES
MRF21045LR3 MRF21045LSR3
10
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
Q
G
M
M
M
bbb
T
B
A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060 .005 (1.52 0.13) RADIUS OR .06 .005
(1.52 0.13) x 45° CHAMFER.
B
SEE NOTE 4
2X K
1
2
3
B
INCHES
DIM MIN MAX
.805 20.19
MILLIMETERS
MIN
MAX
20.44
9.9
2X D
A
B
.795
.380
.125
.275
.035
.004
.390
.163
.285
.045
.006
9.65
3.17
6.98
0.89
0.10
M
M
M
bbb
T
A
B
C
4.14
7.24
1.14
0.15
D
E
F
N (LID)
M
M
M
B
G
.600 BSC
15.24 BSC
ccc
T
A
M
M
M
B
ccc
T
A
H
.057
.092
.395
.395
.120
.395
.395
.067
.122
.405
.405
.130
.405
.405
1.45
2.33
10
10
3.05
10
1.7
3.1
10.3
10.3
3.3
K
R (LID)
M
C
E
F
N
Q
R
10.3
10.3
S
10
aaa
bbb
ccc
.005 BSC
.010 BSC
.015 BSC
0.127 BSC
0.254 BSC
0.381 BSC
S
H
M
M
M
B
aaa
T
A
SEATING
PLANE
(INSULATOR)
T
M
(INSULATOR)
M
M
M
B
aaa
T
A
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
A
CASE 465E-04
ISSUE E
NI-400
MRF21045LR3
2X D
bbb
NOTES:
1. CONTROLLING DIMENSION: INCH.
M
M
M
B
T
A
1
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
MILLIMETERS
2
MIN
10.03
10.03
3.18
MAX
10.29
10.29
4.14
A
B
.395
.395
.125
.275
.035
.004
.057
.092
.395
.395
.395
.395
.405
.405
.163
.285
.045
.006
.067
.122
.405
.405
.405
.405
2X K
C
D
6.98
0.89
7.24
1.14
(LID)
R
E
M
M
M
ccc
T A
B
F
0.10
1.45
0.15
1.70
M
M
M
B
ccc
T
A
H
(LID)
N
K
2.34
3.10
C
E
A
F
M
10.03
10.03
10.03
10.03
10.29
10.29
10.29
10.29
N
R
3
S
aaa
bbb
ccc
.005 REF
.010 REF
.015 REF
0.127 REF
0.254 REF
0.38 REF
H
(INSULATOR)
S
SEATING
PLANE
T
A
M
M
M
B
aaa
T
A
(FLANGE)
STYLE 1:
(INSULATOR)
M
PIN 1. DRAIN
2. GATE
3. SOURCE
B
B
(FLANGE)
M
M
M
aaa
T A
B
CASE 465F-04
ISSUE C
NI-400S
MRF21045LSR3
MOTOROLA RF DEVICE DATA
MRF21045LR3 MRF21045LSR3
11
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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81-3-3440-3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF21045/D
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