MRF5S9070NR1 [NXP]
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN;
| 型号： | MRF5S9070NR1 |
| 厂家： | 
NXP |
| 描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF5S9070NR1
Rev. 7, 6/2009
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device make it ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
MRF5S9070NR1
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts,
I
DQ = 600 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
880 MHz, 70 W, 26 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND
Traffic Codes 8 Through 13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — -47 dBc in 30 kHz Bandwidth
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
- 0.5, +68
- 0.5, +15
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
219
1.25
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
R
θ
JC
°C/W
0.80
0.93
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 μA)
V
V
2
2.7
3.7
4
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 600 mAdc)
—
—
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.0 Adc)
V
0.18
4.7
0.22
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
Dynamic Characteristic
Input Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
126
34
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
rss
1.37
(V = 26 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 26 Vdc, I
= 600 mA, P = 14 W Avg., f = 880 MHz, Single-Carrier
out
DD
DQ
N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
G
17
29
—
—
17.8
30
—
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-47
-19
-45
-9
dBc
dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) V = 26 Vdc, I = 400 mA,
DD
DQ
P
= 60 W, f = 921-960 MHz
out
Power Gain
G
—
—
—
—
16.4
62
—
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
D
IRL
-12
68
dB
W
P
@ 1 dB Compression Point
P1dB
out
(f = 940 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system) V = 26 Vdc,
DD
I
= 400 mA, P = 25 W Avg., f = 921-960 MHz, GSM EDGE Signal
out
DQ
Power Gain
G
—
—
—
—
—
17
44
—
—
—
—
—
dB
ps
Drain Efficiency
η
%
%
D
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
EVM
SR1
SR2
1.5
-62
-78
dBc
dBc
(continued)
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865-895 MHz, 50 οhm system) V = 26 Vdc, I = 400 mA,
DD
DQ
P
= 60 W, f = 865-895 MHz
out
Power Gain
G
—
—
—
—
16.4
59
—
—
—
—
dB
%
ps
Drain Efficiency
Input Return Loss
η
D
IRL
-15
71
dB
W
P
@ 1 dB Compression Point
P1dB
out
(f = 880 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865-895 MHz, 50 οhm system) V = 26 Vdc,
DD
I
= 400 mA, P = 25 W Avg., f = 865-895 MHz, GSM EDGE Signal
out
DQ
Power Gain
G
—
—
—
—
—
17
41
—
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
EVM
SR1
SR2
1.35
-66
-81
%
dBc
dBc
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
3
V
SUPPLY
B2
C18
+
C20
+
C19
C21 R4
L2
V
C22
BIAS
B1
R3
R1
C8
C9 C10
+
C7
+
+
C11
R2
L1
C12
RF
OUTPUT
C5
Z8
Z10
Z11
C13
Z12 Z13
Z14
C15
Z15
Z16
RF
INPUT
Z1
Z2
Z3 Z4 Z5 Z6
Z7
C3
Z9
C6
C14
C16 C17
C2
C1
C4
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.140″ x 0.060″ Microstrip
0.141″ x 0.060″ Microstrip
0.280″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.530″ x 0.270″ Microstrip
0.155″ x 0.270″ x 0.530″ Taper
0.376″ x 0.530″ Microstrip
0.116″ x 0.530″ Microstrip
0.055″ x 0.530″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.245″ x 0.270″ Microstrip
0.110″ x 0.270″ Microstrip
0.055″ x 0.270″ Microstrip
0.512″ x 0.060″ Microstrip
0.106″ x 0.060″ Microstrip
0.930″ x 0.060″ Microstrip
0.365″ x 0.060″ Microstrip
Taconic RF-35, 0.030″, ε = 3.5
r
Figure 1. MRF5S9070NR1 Test Circuit Schematic
Table 6. MRF5S9070NR1 Test Circuit Component Designations and Values
Part
Description
Small Ferrite Bead, Surface Mount
Large Ferrite Bead, Surface Mount
0.6-6.0 pF Variable Capacitor, Gigatrim
16 pF Chip Capacitor
Part Number
Manufacturer
Fair-Rite
B1
2743019447
B2
2743021447
Fair-Rite
Johanson
ATC
C1
272715L
C2
ATC100B160JT500XT
ATC100B7R5JT500XT
272915L
C3
7.5 pF Chip Capacitor
ATC
C4, C16
C5, C6
C7, C8, C20
0.8-8.0 pF Variable Capacitors, Gigatrim
15 pF Chip Capacitors
Johanson
ATC
ATC100B150JT500XT
T491D106K035AT
ATC700A561MT150XT
ATC100B180JT500XT
515D107M050BB6AE3
ATC100B130JT500XT
ATC100B0R7BT500XT
ATC100B3R9JT500XT
ATC100B180JT500XT
ESMG630ELL471MK20S
A04TJL
10 μF, 35 V Tantalum Capacitors
0.58 μF Chip Capacitors
Kemet
ATC
C9, C19, C22
C10, C18
C11
18 pF Chip Capacitors
ATC
100 μF, 50 V Electrolytic Capacitor
13 pF Chip Capacitors
Vishay
ATC
C12, C14
C13
0.7 pF Chip Capacitor
ATC
C15
3.9 pF Chip Capacitor
ATC
C17
22 pF Chip Capacitor
ATC
C21
470 μF, 63 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
1 kW, 1/4 W Chip Resistor
560 kW, 1/4 W Chip Resistor
12 W, 1/4 W Chip Resistor
27 W, 1/4 W Chip Resistor
United Chemi-Con
Coilcraft
Vishay
Vishay
Vishay
Vishay
L1, L2
R1
CRCW12061001FKEA
CRCW12065600FKEA
CRCW120612R0FKEA
CRCW120627R0FKEA
R2
R3
R4
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
4
C21
C19
C8
B1
V
DD
R2
C7
B2
R4
R1
C20
C9
V
R3
GG
C22
C10
C11
C18
C6
C5
L2
C15
L1
C3
C2
C12
C17
C1
C16
C13 C14
C4
MRF5S9070N
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9070NR1 Test Circuit Component Layout
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
20
19
18
17
16
15
14
13
12
11
10
9
45
40
35
30
25
G
ps
η
D
V
= 26 Vdc, P = 14 W (Avg.), I = 600 mA
out DQ
DD
Single−Carrier N−CDMA, IS−95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
−40
−45
−12
−15
−18
−21
−24
−27
−30
IRL
−50
−55
ACPR
ALT
−60
−65
−70
8
860
865
870
875
880
885
890
895
900
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Performance
20
19
18
17
16
15
−20
V
= 26 Vdc
DD
−25
−30
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
I
= 900 mA
DQ
750 mA
600 mA
−35
−40
I
= 900 mA
DQ
300 mA
450 mA
300 mA
750 mA
600 mA
−45
V
= 26 Vdc
DD
−50
−55
−60
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
450 mA
1
1
10
, OUTPUT POWER (WATTS) PEP
100
10
P , OUTPUT POWER (WATTS) PEP
out
100
P
out
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
20
18
16
14
12
60
40
20
0
−10
V
= 26 Vdc, I = 600 mA
DQ
DD
G
ps
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
(f1 + f2)/2 = Center Frequency of 880 MHz
100 kHz Tone Spacing
−40
−50
η
D
3rd Order
V
= 26 Vdc, I = 600 mA
DQ
DD
−60
−70
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements,
100 kHz Tone Spacing
−20
5th Order
7th Order
10
8
−40
−60
IMD
−80
−90
1
10
100
1
10
100
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Power Gain, Drain Efficiency and
IMD versus Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
55
54
53
52
51
50
49
48
47
20
60
40
20
0
Ideal
G
ps
18
16
14
12
P3dB = 49.78 dBm (94.97 W)
η
D
P1dB = 49.11 dBm (81.54 W)
V
= 26 Vdc, I = 600 mA, f = 880 MHz
DQ
Single−Carrier N−CDMA, IS−95
DD
−20
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
Actual
10
8
−40
−60
−80
ACPR
ALT
V
= 26 Vdc, I = 600 mA
DQ
DD
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 880 MHz
46
45
6
27
28
29
30
31
32
33
34
35
36 37
1
10
P , INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. N-CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
20
70
60
50
40
30
G
ps
18
16
14
12
V
= 26 Vdc
= 600 mA
DD
10
8
20
10
I
DQ
f = 880 MHz
η
D
1
10
, OUTPUT POWER (WATTS) CW
100
P
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
9
10
8
7
6
10
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 11. MTTF Factor versus Junction Temperature
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
7
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
.
.
.
.
.
. .
..
. .
... .. . .
.. ..
.
.. . .. ..
.
. .
.
.
. .
. . . .
.
.
.
.
. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1
.
−40
−50
−60
−70
−80
.
.
.
.
.
.
.
.
.
.
.
.
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
.
.
.
0.1
0.01
.
.
.
..
.
.
.
.
.
.
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
..
.
.
. .
.
.
. .
. ..
. . .
.
. .
.
.
.
..
.. ..
. . .
. .
... .
. .
.
.
.
. ..
. ..
.
.
.
.
..
.
...
.
.
.
.
.
.
..
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..
. .
. .
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..
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..
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...
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..
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..
..
..
.
.. .
.
.
.
..
.
.
..
.
..
0.001
...
.
..
.. .
.
..
.
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW Integrated BW
.
.
. .
. .
.
..
..
.
. .
.
.
.
.....
. ..
.
.
. . .
..
. .
.
.
.
. ..
. .
. ..
.
. .
. .
.. .
..
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...
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..
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..
....
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..
−90 .
. .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
−3.6 −2.9 −2.2 −1.5 −0.7
Figure 12. Single-Carrier CCDF N-CDMA
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 13. Single-Carrier N-CDMA Spectrum
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
8
Z = 2 Ω
o
f = 895 MHz
f = 895 MHz
Z
source
f = 865 MHz
Z
load
f = 865 MHz
V
= 26 Vdc, I = 600 mA, P = 14 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
865
875
885
0.7 + j0.4
0.7 + j0.5
0.6 + j0.5
2.1 + j0.6
2.0 + j0.7
1.8 + j0.8
895
0.5 + j0.5
1.8 + j0.9
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
10
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
11
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
12
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
7
June 2009
•
Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 10-12. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
•
•
•
•
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 4
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 13
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
13
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
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Document Number: MRF5S9070NR1
Rev. 7, 6/2009
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