MRF8HP21080HSR3 [NXP]
N-Channel Enhancement-Mode Lateral MOSFET;
| 型号： | MRF8HP21080HSR3 |
| 厂家： | 
NXP |
| 描述： | N-Channel Enhancement-Mode Lateral MOSFET 放大器 CD 晶体管 |
| 文件： | 总14页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8HP21080H
Rev. 0, 6/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8HP21080HR3
MRF8HP21080HSR3
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 150 mA, VGSB = 1.1 Vdc, Pout = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
2110--2170 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
14.1
14.5
14.4
(%)
46.7
46.2
45.7
8.3
8.2
8.1
--30.6
--32.1
--33.6
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 100 Watts (1)
)
MRF8HP21080HR3
Features
•
•
•
•
Advanced High Performance In--Package Doherty
Production Tested in a Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
CASE 465H--02, STYLE 1
NI--780S--4
MRF8HP21080HSR3
•
•
•
Carrier
•
•
•
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
RF /V
inB GSB
RF /V
outB DSB
Peaking
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
150
T
C
°C
(2,3)
T
J
225
°C
CW Operation @ T = 25°C
CW
220
W
C
Derate above 25°C
3.3
W/°C
1. P3dB = P
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 77°C, 16 W CW, 28 Vdc, I
Case Temperature 81°C, 80 W CW , 28 Vdc, I
= 150 mA, V
= 1.1 Vdc, 2170 MHz
GSB
1.0
0.61
DQA
(3)
= 150 mA, V
= 1.1 Vdc, 2170 MHz
DQA
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
(4)
On Characteristics -- Side A
Gate Threshold Voltage
V
V
1.1
2.0
0.1
2.0
2.7
2.6
3.5
0.3
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 100 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 150 mA, Measured in Functional Test)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 0.5 Adc)
V
0.24
GS
D
(4)
On Characteristics -- Side B
Gate Threshold Voltage
V
1.2
0.1
2.0
2.7
0.3
GS(th)
(V = 10 Vdc, I = 75 μAdc)
DS
D
Drain--Source On--Voltage
V
0.24
DS(on)
(V = 10 Vdc, I = 0.7 Adc)
GS
D
(5,6)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 150 mA, V
= 1.1 Vdc, P = 16 W Avg.,
GSB out
DD
DQA
f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
13.8
42.4
7.3
—
14.4
45.7
8.1
16.8
—
ps
D
Drain Efficiency
η
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
--33.6
-- 1 7
--28.9
-- 9
—
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
(1)
Typical Broadband Performance — (In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 150 mA, V = 1.1 Vdc,
GSB
DD
DQA
P
= 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
out
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
G
η
Output PAR
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
(dB)
14.1
14.5
14.4
(%)
46.7
46.2
45.7
(dB)
8.3
--30.6
--32.1
--33.6
-- 1 7
-- 1 7
-- 1 8
8.2
2170 MHz
8.1
(1)
Typical Performances
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 150 mA, V = 1.1 Vdc,
GSB
DD
DQA
2110--2170 MHz Bandwidth
Characteristic
@ 1 dB Compression Point, CW
Symbol
P1dB
Min
—
Typ
60
Max
—
Unit
W
P
P
out
out
(2)
@ 3 dB Compression Point
P3dB
—
100
—
W
IMD Symmetry @ 10 W PEP, P where IMD Third Order
IMD
MHz
out
sym
—
—
40
—
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
78
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 16 W Avg.
G
—
—
0.4
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.012
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.01
—
dB/°C
(--30°C to +85°C)
1. Measurement made with device in a Doherty configuration.
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
3
C22
R2
V
V
DSA
B1
GSA
C3
C15
C9
C5
C17
C21
C13
R4
C1
C11
C
P
C19
C20
C7
C8
R1
C12
R5
C2
MRF8HP21080
Rev. 4
C14
C18
C6
C10
C16
C4
B2
V
V
DSB
GSB
C23
R3
*C7, C8, C19 and C20 are mounted vertically.
Figure 2. MRF8HP21080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8HP21080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
30 Ω Ferrite Beads
Part Number
MPZ2012S300A
Manufacturer
TDK
B1, B2
C1, C2
1.6 pF Chip Capacitors
ATC100B1R6BT500XT
ATC
C3, C4, C5, C6, C15, C16,
C17, C18
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7*, C8*, C9, C10, C13,
C14, C19*, C20*
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC100B1R5BT500XT
ATC100B0R5BT500XT
227CKS050M
ATC
C12
1.5 pF Chip Capacitor
ATC
C21
0.5 pF Chip Capacitor
ATC
C22,C23
R1
220 μF, 50 V Electrolytic Capacitors
100 Ω, 4 W Chip Resistor
20 kΩ, 1/4 W Chip Resistors
3 Ω, 1/4 W Chip Resistors
Illinois Capacitor
ATC
CW12010T0100GBK
CRCW120620K0JNEA
CRCW12063R00FKEA
R04350
R2, R3
R4, R5
PCB
Vishay
Vishay
Rogers
0.030″, ε = 3.5
r
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
16
48
15.6
15.2
14.8
14.4
46
44
η
D
V
= 28 Vdc, P = 16 W (Avg.)
= 150 mA
DD
out
42
I
DQA
40
V
= 1.1 Vdc
GSB
G
ps
-- 2 6
-- 2 8
-- 3 0
-- 3 2
-- 3 4
-- 3 6
14
13.6
13.2
12.8
12.4
12
-- 1 . 6
-- 1 . 8
-- 2
PARC
-- 2 . 2
-- 2 . 4
-- 2 . 6
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
ACPR
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 16 Watts Avg.
-- 20
V
= 28 Vdc, P = 10 W (PEP)
out
DD
IM3--U
I
= 150 mA, V
= 1.1 Vdc
DQA
GSB
-- 30
-- 40
-- 50
-- 60
-- 7 0
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency
of 2140 MHz
IM3--L
IM5--L
IM5--U
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 1 5
15
14.8
14.6
14.4
14.2
14
1
0
60
V
= 28 Vdc, I
= 150 mA, V
= 1.1 Vdc
GSB
DD
DQA
f = 2140 MHz, Single--Carrier W--CDMA
50
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
η
D
-- 1
-- 2
40
30
20
10
0
G
ps
ACPR
-- 1 d B = 1 2 W
-- 2 d B = 1 7 W
-- 3 d B = 2 2 W
-- 3
-- 4
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
PARC
13.8
-- 5
5
10
15
20
25
30
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
16
70
0
V
= 28 Vdc, I
= 150 mA, V
= 1.1 Vdc
GSB
DD
DQA
Single--Carrier W--CDMA
15
14
13
12
11
10
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
60
50
40
30
20
10
η
D
2170 MHz
2140 MHz
G
ps
ACPR
2140 MHz
2110 MHz
2170 MHz
2170 MHz
2140 MHz
2110 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
12
9
V
P
= 28 Vdc
= 0 dBm
DD
6
in
I
V
= 150 mA
= 1.1 Vdc
DQA
3
0
GSB
1950 2000 2050 2100 2150 2200 2250 2300 2350
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
3.84 MHz
Channel BW
1
Input Signal
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--100
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
0.0001
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
6
V
= 28 Vdc, I
= 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
P3dB
(W)
63
(1)
f
Z
Z
load
(Ω)
source
(Ω)
(MHz)
(dBm)
47.2
(W)
53
η
(%)
(dBm)
48.0
η (%)
D
D
2110
2140
2170
6.97 -- j14.8
7.61 -- j17.9
6.68 -- j18.7
6.61 -- j11.5
6.33 -- j12.0
6.41 -- j11.2
57.1
55.7
54.5
57.4
56.0
56.1
47.1
51
48.0
63
46.9
49
47.9
62
(1) Load impedance for optimum P1dB power.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I
= 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
DD
DQA
P3dB
(W)
47
(1)
f
Z
Z
load
source
(Ω)
(MHz)
(Ω)
(dBm)
45.6
(W)
36
η
(%)
(dBm)
46.7
η
(%)
D
D
2110
2140
2170
6.97 -- j14.8
7.61 -- j17.9
6.68 -- j18.7
14.3 -- j9.22
14.4 -- j9.52
13.8 -- j8.09
65.1
64.2
63.9
65.9
45.5
36
46.7
47
65.1
65.9
45.6
36
46.6
46
(1) Load impedance for optimum P1dB efficiency.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
7
V
= 28 Vdc, V
= 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
P3dB
(W)
85
(1)
f
Z
Z
load
(Ω)
source
(Ω)
(MHz)
(dBm)
48.6
(W)
72
η
(%)
(dBm)
49.3
η (%)
D
D
2110
2140
2170
4.73 -- j9.34
6.50 -- j11.3
7.08 -- j13.3
3.70 -- j6.50
3.39 -- j6.80
3.30 -- j7.10
60.2
59.7
59.1
61.1
59.5
59.0
48.7
74
49.4
87
48.6
72
49.4
87
(1) Load impedance for optimum P1dB power.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, V
= 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
DD
GSB
P3dB
(W)
56
(1)
f
Z
Z
load
source
(Ω)
(MHz)
(Ω)
(dBm)
46.7
(W)
47
η
(%)
(dBm)
47.5
η
(%)
D
D
2110
2140
2170
4.73 -- j9.34
6.50 --j11.3
7.08 -- j13.3
8.22 -- j9.10
9.00 -- j8.20
9.10 -- j7.55
70.6
71.0
69.6
70.5
46.6
46
47.4
55
70.4
69.0
46.4
44
47.9
62
(1) Load impedance for optimum P1dB efficiency.
Z
Z
= Impedance as measured from gate contact to ground.
= Impedance as measured from drain contact to ground.
source
load
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
9
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
10
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
11
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
12
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8HP21080H and MRF8HP21080HS parts will be available for 2 years after release of
MRF8HP21080H and MRF8HP21080HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8HP21080H and MRF8HP21080HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2011
• Initial Release of Data Sheet
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
13
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
Semiconductor was negligent regarding the design or manufacture of the part.
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2011. All rights reserved.
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF8HP21080H
Rev. 0, 6/2011
相关型号：
MRF8HP21130HR3
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
MRF8HP21130HSR3
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
MRF8P20140WGHSR3
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V
NXP
MRF8P20140WHR3
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
MRF8P20140WHR3
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN
NXP
MRF8P20140WHSR3
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
©2020 ICPDF网 联系我们和版权申明