MRFG35010R1 [NXP]
S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN;
| 型号： | MRFG35010R1 |
| 厂家： | 
NXP |
| 描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFG35010
Rev. 9, 1/2008
Freescale Semiconductor
Technical Data
MRFG35010R1 replaced by MRFG35010AR1.
MRFG35010R1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3550 MHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360D-02, STYLE 1
NI-360HF
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
15
Vdc
DSS
Total Device Dissipation @ T = 25°C
P
28.3
0.19
W
W/°C
C
D
Derate above 25°C
Gate-Source Voltage
RF Input Power
V
-5
33
Vdc
dBm
°C
GS
P
in
Storage Temperature Range
T
stg
-65 to +175
175
(1)
Channel Temperature
T
ch
°C
Operating Case Temperature Range
T
-20 to +90
°C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
Class A
Class AB
R
θ
JC
5.3
4.8
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 3. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(V = 3.5 Vdc, V = 0 Vdc)
I
—
2.9
—
Adc
DSS
GSS
DSO
DS
GS
Off State Leakage Current
(V = -0.4 Vdc, V = 0 Vdc)
I
—
—
< 1
0.09
5
100
1
μAdc
mAdc
mAdc
Vdc
Vdc
dB
GS
DS
Off State Drain Current
I
(V = 12 Vdc, V = -1.9 Vdc)
DS
GS
Off State Current
I
—
15
DSX
(V = 28.5 Vdc, V = -2.5 Vdc)
DS
GS
Gate-Source Cut-off Voltage
(V = 3.5 Vdc, I = 15 mA)
V
GS(th)
V
GS(Q)
-1.2
-1
-0.8
-0.8
10
-0.7
-0.5
—
DS
DS
Quiescent Gate Voltage
(V = 12 Vdc, I = 180 mA)
DS
D
Power Gain
G
9
ps
(V = 12 Vdc, I
= 180 mA, f = 3.55 GHz)
DD
DQ
Output Power, 1 dB Compression Point
P1dB
—
10
—
W
(V = 12 Vdc, I
= 180 mA, f = 3.55 GHz)
DD
DQ
Drain Efficiency
h
23
30
—
%
D
(V = 12 Vdc, I
= 180 mA, P = 1 W Avg.,
out
DD
DQ
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V = 12 Vdc, P = 1 W Avg., I = 180 mA,
ACPR
—
-42
-40
dBc
DD
out
DQ
f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
MRFG35010R1
RF Device Data
Freescale Semiconductor
2
V
DD
Q1
R7
D1
R1
R2
C14
C16
C19
C12
C13
C15
C18
C20
R9
C17
1
2
8
7
NC
C9
C11
U1
R3
3
4
6
5
R6
R5
C7
C5
C3
C10
C8
C6
C4
C2
R4
R8
Z9
Z8
Z10
Z11
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z12
Z13
Z14
Z15 Z16
Z17
C1
C21
C1, C21
C2, C20
C3, C19
C4, C18
C5, C10, C16, C17
C6, C11, C12, C15
C7, C14
C8, C13
C9
D1
R1
R2
R3
R4
R5
R6
R7
R8, R9
6.8 pF Chip Capacitors, ATC
10 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
1000 pF Chip Capacitors, ATC
0.1 μF Chip Capacitors, ATC
39K Chip Capacitors, ATC
U1
Q1
Voltage Converter, LTC 1261
Switch, MTP23P06V
PCB
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z11
Z9, Z10
Z12
Z13
Z14
Rogers RO4350, 0.020″, ε = 3.50
r
0.044″ x 0.250″ Microstrip
0.044″ x 0.030″ Microstrip
0.615″ x 0.050″ Microstrip
0.044″ x 0.070″ Microstrip
0.270″ x 0.490″ Microstrip
0.044″ x 0.470″ Microstrip
0.434″ x 0.110″ Microstrip
0.015″ x 0.527″ Microstrip
0.290″ x 90° Microstrip Radial Stub
0.184″ x 0.390″ Microstrip
0.040″ x 0.580″ Microstrip
0.109″ x 0.099″ Microstrip
0.030″ x 0.225″ Microstrip
0.080″ x 0.240″ Microstrip
0.044″ x 0.143″ Microstrip
22 μF Tantalum Chip Capacitors
6.8 μF Tantalum Chip Capacitor
5.1 V Zener Diode, MA8051CT-ND
22.1 kΩ, 1/4 W 1%, Chip Resistor
5K Trim Pot, #3224W-1-502E
12 kΩ, 1/4 W 1%, Chip Resistor
100 kΩ, 1/4 W 1%, Chip Resistor
39 kΩ, 1/4 W 1%, Chip Resistor
10 Ω, 1/4 W 1%, Chip Resistor
2.2 kΩ, 1/4 W 1%, Chip Resistor
50 Ω, 1/4 W 1%, Chip Resistors
Z15
Z16
Z17
Figure 1. 3.4 - 3.6 GHz Single Supply Bias Sequencing Test Circuit Schematic
MRFG35010R1
RF Device Data
Freescale Semiconductor
3
V
= 12 V
DD
R7
C11
U1
G
D
S
Q1
R3
R2
R4
R1
D1
C12
C17
C8
C10
R5
R9
R6
C9
C13
C18
GND
C16 C15 C14
C19
C4
C3
C7
C6
C5
C20
C2
R8
INPUT
C1
C21
OUTPUT
MRFG35010
Rev−06
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout
MRFG35010R1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
13.5
13
80
70
60
50
V
= 12 Vdc, I = 180 mA
DQ
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
DS
Γ = 0.857é−144.24_, Γ = 0.798é−164.30_
12.5
12
S
L
G
ps
11.5
11
40
30
20
10
0
η
10.5
10
D
9.5
0.1
1
10
P
, OUTPUT POWER (WATTS)
out
Figure 3. Power Gain and Drain Efficiency
versus Output Power
0
−10
−20
−30
−40
−50
−60
−70
0
IRL
−10
−20
−30
−40
−50
−60
−70
ACPR
V
= 12 Vdc, I = 180 mA
DQ
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
DS
Γ = 0.857é−144.24_, Γ = 0.798é−164.30_
S
L
0.1
1
10
P
, OUTPUT POWER (WATTS)
out
Figure 4. W-CDMA ACPR and Input Return Loss
versus Output Power
36
60
45
V
= 12 Vdc, I = 180 mA
DQ
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
DS
34
32
Γ = 0.857é−144.24_, Γ = 0.798é−164.30_
S
L
30
28
30
15
0
P
out
26
24
η
D
22
20
5
10
15
P , INPUT POWER (dBm)
20
25
in
Figure 5. W-CDMA Output Power and Drain
Efficiency versus Input Power
NOTE: All data is referenced to package lead interface. ΓS andΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010R1
RF Device Data
Freescale Semiconductor
5
f = 3600 MHz
f = 3500 MHz
Z
load
Z = 25 Ω
o
Z
source
f = 3600 MHz
f = 3500 MHz
V
= 12 V, I =180 mA, P = 1 W
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
3500
3550
3600
4.3 - j16.3
4.2 - j16.0
4.1 - j15.8
5.7 - j7.0
5.7 - j6.8
5.7 - j6.6
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 6. Series Equivalent Source and Load Impedance
MRFG35010R1
RF Device Data
Freescale Semiconductor
6
Table 4. Class A Common Source S-Parameters at VDS = 12 Vdc, IDQ = 1000 mA
S
S
S
S
22
11
21
12
f
GHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
4.60
4.70
4.80
4.90
5.00
0.956
0.957
0.956
0.956
0.954
0.955
0.954
0.952
0.952
0.950
0.950
0.948
0.946
0.944
0.943
0.942
0.940
0.938
0.937
0.935
0.934
0.932
0.928
0.926
0.923
0.920
0.917
0.913
0.908
0.903
0.897
0.893
0.884
0.875
0.866
0.851
0.833
0.814
0.793
0.771
0.748
0.723
0.697
0.672
0.647
0.622
-177.95
-179.86
178.44
177.05
175.83
174.61
173.42
172.29
171.25
170.02
168.36
167.24
166.01
164.67
163.59
162.31
161.09
159.66
158.30
156.86
155.35
153.83
152.26
150.58
148.97
147.18
145.27
143.23
141.12
138.91
136.46
133.77
130.86
127.58
124.06
120.13
115.98
111.48
106.69
101.44
95.69
5.591
4.668
4.007
3.520
3.138
2.842
2.604
2.402
2.236
2.098
2.054
1.944
1.850
1.769
1.698
1.638
1.580
1.532
1.491
1.454
1.422
1.396
1.375
1.356
1.342
1.332
1.328
1.326
1.329
1.335
1.346
1.360
1.375
1.393
1.417
1.443
1.472
1.505
1.541
1.581
1.622
1.668
1.721
1.771
1.818
1.860
79.60
76.30
73.21
70.18
67.20
64.30
61.65
58.87
56.13
53.34
50.41
47.63
44.77
42.06
39.29
36.53
33.69
30.84
28.03
25.19
22.38
19.54
16.68
13.80
10.91
7.87
0.007
0.007
0.008
0.008
0.009
0.010
0.009
0.011
0.011
0.011
0.011
0.012
0.013
0.014
0.015
0.015
0.016
0.017
0.017
0.019
0.020
0.021
0.022
0.023
0.025
0.027
0.028
0.030
0.032
0.034
0.036
0.039
0.042
0.045
0.048
0.052
0.056
0.060
0.065
0.071
0.076
0.082
0.089
0.096
0.103
0.110
15.64
23.81
23.84
26.09
30.55
28.91
31.64
31.90
36.06
33.99
32.65
32.47
37.07
34.40
35.71
37.47
35.82
35.69
35.43
34.19
34.10
35.51
33.15
30.84
31.00
29.11
28.98
27.36
25.93
24.33
22.30
19.80
17.46
15.22
13.31
10.27
7.36
0.741
0.739
0.736
0.736
0.735
0.735
0.734
0.735
0.735
0.736
0.725
0.725
0.725
0.725
0.725
0.724
0.724
0.722
0.721
0.720
0.718
0.718
0.716
0.714
0.711
0.708
0.704
0.699
0.694
0.687
0.679
0.670
0.659
0.648
0.636
0.626
0.618
0.609
0.602
0.592
0.582
0.575
0.568
0.559
0.549
0.539
179.71
179.15
178.75
178.29
177.85
177.42
176.95
176.52
175.97
175.52
174.86
174.31
173.70
172.90
172.32
171.58
170.75
169.89
169.04
168.15
167.32
166.38
165.61
164.67
163.77
162.89
161.96
161.08
160.09
159.09
158.02
156.93
155.90
154.96
154.06
153.16
152.14
151.13
149.84
148.47
147.06
145.72
144.03
142.02
139.82
137.39
4.88
1.73
-1.48
-4.80
-8.26
-11.89
-15.61
-19.50
-23.55
-27.75
-32.06
-36.63
-41.44
-46.57
-51.82
-57.33
-63.32
-69.70
-76.56
-83.67
4.18
1.13
-3.19
-7.50
-11.79
-16.57
-22.28
-28.04
-33.91
89.38
82.41
74.51
65.82
56.14
MRFG35010R1
RF Device Data
Freescale Semiconductor
7
Table 5. Class AB Common Source S-Parameters at VDS = 12 Vdc, IDQ = 180 mA
S
S
S
S
22
11
21
12
f
GHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
3.73
|S |
22
∠ φ
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
4.60
4.70
4.80
4.90
5.00
0.936
0.936
0.935
0.935
0.935
0.934
0.934
0.933
0.933
0.933
0.929
0.930
0.927
0.926
0.925
0.923
0.921
0.920
0.918
0.916
0.916
0.913
0.912
0.909
0.907
0.904
0.901
0.896
0.893
0.887
0.882
0.876
0.870
0.863
0.853
0.840
0.825
0.807
0.787
0.767
0.745
0.721
0.697
0.674
0.647
0.622
-175.05
-177.28
-179.21
179.21
177.77
176.46
175.26
174.05
172.86
171.71
170.06
168.89
167.73
166.37
165.33
164.05
162.82
161.49
160.17
158.74
157.35
155.97
154.45
152.83
151.25
149.54
147.76
145.88
143.83
141.78
139.43
136.99
134.24
131.29
127.96
124.33
120.40
116.26
111.78
106.97
101.74
95.90
5.292
4.422
3.803
3.341
2.983
2.701
2.473
2.284
2.124
1.991
1.948
1.845
1.757
1.678
1.610
1.551
1.498
1.451
1.411
1.376
1.347
1.321
1.300
1.280
1.268
1.257
1.253
1.253
1.255
1.260
1.268
1.281
1.295
1.311
1.334
1.354
1.386
1.414
1.453
1.492
1.537
1.579
1.633
1.685
1.740
1.790
80.70
77.20
74.02
70.87
67.85
64.80
62.00
59.24
56.47
53.70
50.73
47.88
44.99
42.32
39.48
36.70
33.90
31.07
28.22
25.43
22.58
19.80
16.98
14.05
11.14
8.18
0.014
0.014
0.015
0.014
0.014
0.015
0.015
0.014
0.015
0.015
0.016
0.016
0.016
0.016
0.017
0.018
0.018
0.018
0.019
0.020
0.020
0.021
0.022
0.023
0.024
0.026
0.026
0.028
0.030
0.031
0.033
0.035
0.038
0.040
0.042
0.046
0.049
0.053
0.057
0.061
0.066
0.071
0.077
0.084
0.090
0.097
0.735
0.735
0.735
0.736
0.738
0.738
0.738
0.739
0.740
0.739
0.730
0.731
0.731
0.730
0.732
0.731
0.731
0.730
0.729
0.728
0.727
0.727
0.725
0.723
0.719
0.717
0.714
0.709
0.704
0.697
0.690
0.682
0.672
0.660
0.650
0.639
0.632
0.624
0.617
0.608
0.599
0.589
0.580
0.569
0.557
0.545
-178.66
-179.61
179.80
179.20
178.58
178.09
177.54
177.01
176.42
175.92
175.22
174.51
173.88
173.09
172.45
171.71
170.85
170.01
169.14
168.25
167.43
166.51
165.61
164.76
163.70
162.83
161.86
160.85
159.82
158.76
157.60
156.46
155.26
154.16
153.12
152.16
150.97
149.72
148.33
146.78
145.00
143.33
141.41
139.21
136.94
134.20
3.63
3.78
7.22
5.83
7.03
7.15
6.85
6.90
8.93
7.81
8.58
8.16
10.00
9.25
11.89
10.06
10.11
10.86
9.05
8.57
9.64
10.23
9.68
10.24
7.35
5.20
9.11
2.11
6.33
-1.10
-4.43
-7.81
-11.29
-14.96
-18.72
-22.68
-26.85
-31.01
-35.40
-40.01
-44.83
-49.99
-55.50
-61.25
-67.46
-74.01
-81.02
7.09
5.16
4.74
4.34
1.64
0.43
-2.33
-4.01
-6.67
-9.06
-11.29
-14.79
-18.66
-22.20
-26.02
-30.63
-35.78
-41.70
89.39
82.09
73.93
64.84
MRFG35010R1
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
NOTES:
G
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
2 x
K
S
(INSULATOR)
1
2
M
M
M
B
bbb
T A
B
(FLANGE)
3
INCHES
DIM MIN MAX
MILLIMETERS
2 x
MIN
20.19
5.72
3.18
0.89
1.40
0.10
MAX
20.45
5.97
4.47
1.12
1.65
0.15
Q
bbb
A
B
.795
.225
.125
.034
.055
.004
.805
.235
.176
.044
.065
.006
2 x
B
M
M
M
D
T A
T A
B
C
M
M
M
bbb
B
D
E
F
G
.562 BSC
14.28 BSC
N (LID)
H
.077
.085
.355
.355
.125
.225
.225
.087
.115
.365
.365
.135
.235
.235
1.96
2.16
9.02
9.96
3.18
5.72
5.72
2.21
2.92
9.27
10.16
3.43
5.97
5.97
0.13
0.25
0.38
R (LID)
K
M
M
M
ccc
T A
B
M
M
M
M
ccc
T A
B
N
F
Q
E
H
R
S
C
aaa
bbb
ccc
.005
.010
.015
T
M
SEATING
PLANE
STYLE 1:
(INSULATOR)
PIN 1. GATE
2. DRAIN
3. SOURCE
M
M
M
B
aaa
T A
A
A
CASE 360D-02
ISSUE C
NI-360HF
MRFG35010R1
RF Device Data
Freescale Semiconductor
9
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
9
Jan. 2008
•
•
Listed replacement part, p. 1
Added Revision History, p. 10
MRFG35010R1
RF Device Data
Freescale Semiconductor
10
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Document Number: MRFG35010
Rev. 9,1/2008
相关型号：
MRFG35010R5
S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
ROCHESTER
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