MTB10010U [NXP]
NPN microwave power transistor; NPN微波功率晶体管型号: | MTB10010U |
厂家: | NXP |
描述: | NPN microwave power transistor |
文件: | 总12页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
MTB10010U
NPN microwave power transistor
1997 Feb 20
Product specification
Supersedes data of November 1994
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
FEATURES
QUICK REFERENCE DATA
Microwave performance for Tmb = 25 °C in a common base class C
• Input prematching cell allows an
easier design of circuits
narrowband amplifier.
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
MODE OF
OPERATION
f
VCC
PL
GPO
ηC
Zi/ZL
(Ω)
CONDITIONS
(MHz) (V)
(W) (dB) (%)
Class C
tp = 1 µs;
δ = 1%
1030 24
>9.5 >9.5 >50 see
Figs 5
and 6
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good characteristics stability and
excellent lifetime
PINNING - SOT440A
PIN
DESCRIPTION
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
1
2
3
collector
emitter
base connected to flange
APPLICATIONS
Common base class C narrowband
pulsed power amplifiers at 1030 MHz
for IFF applications.
1
handbook, 4 columns
c
DESCRIPTION
b
NPN silicon planar epitaxial
3
e
microwave transistor with internal
input prematching cell in a SOT440A
metal ceramic package with base
connected to flange.
MAM131
2
Top view
Marking code: 10010U.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
−
−
−
−
−
−
V
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (average)
total power dissipation
storage temperature
open base
RBE = 0 Ω
15
V
40
V
open collector
3
V
0.75
36
A
Ptot
Tstg
Tj
Tmb < 75 °C; tp = 1 µs; δ = 1%
t ≤ 10 s; note 1
W
°C
°C
°C
−65
−
+200
200
235
junction temperature
soldering temperature
Tsld
−
Note
1. Up to 0.3 mm from ceramic.
MGA037
MGA038
50
12
handbook, halfpage
handbook, halfpage
P
tot
P
L
(W)
(W)
40
8
30
20
10
0
4
0
0
0.5
1
1.5
2
–50
0
50
100
150
200
250
( C)
P (W)
o
i
T
mb
Ptot max = 36 W under the nominal pulse conditions.
VCC = 24 V; tp = 1 µs; δ = 1%; f = 1030 MHz.
Fig.3 Load power as a function of input power.
Fig.2 Power derating curve.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tj = 100 °C
MAX.
10.5
0.7
UNIT
K/W
K/W
K/W
Rth j-mb
Rth mb-h
Zth j-mb
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to mounting base
note 1
tp = 1 µs; δ = 1%;
2.5
note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MAX.
UNIT
VCB = 30 V; IE = 0
45
µA
µA
µA
ICES
collector cut-off current
emitter cut-off current
VCE = 30 V; RBE = 0 300
VEB = 1.5 V; IC = 0 4.5
IEBO
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C and working in pulsed conditions in a narrowband test circuit as shown in
Fig.4.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(Ω)
CONDITIONS
(MHz)
Class C
tp = 1 µs; δ = 1 %
1030
24
>9.5;
typ. 11
>9.5;
typ. 10
>50;
typ. 55
see Figs 5 and 6
List of components (see Fig.4)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
0.4 mm diameter copper wire
tuning capacitor
−
rectangular loop
−
C1
C2
C3
C4
C5
C6
C7
0.5 − 5 pF
3 pF
−
−
−
−
−
−
−
Tekelec 5855
chip capacitor
Eurofarad CEC 23
Eurofarad CEC 23
Eurofarad CEC 23
−
chip capacitor
10 pF
chip capacitor
47 pF
tantalum capacitor
feedthrough bypass capacitor
capacitor
10 µF, 50 V
−
Erie 1250-003
−
220 µF, 63 V
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
30 mm
30 mm
4.3
6.3
0.4
4
5
2 3
2
12
2
2.8
3
6
1.8
2
2
40 mm
40 mm
7
5.6
2.8
0.6
0.6
1
7.5
2
2
3
MBC785
C7
V
CC
V
CC
C6
C5
C4
L1
input
output
C3
C1
C2
MBC786
Dimensions in mm.
Substrate: Duroid 6010.
Permittivity: εr = 10.2.
Fig.4 Narrowband test circuit.
5
1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
1
0.5
2
1090 MHz
1030 MHz
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
–
j
10
5
0.2
2
0.5
1
MGA036
VCC = 24 V; ZO = 5 Ω; PL = 10 W.
Fig.5 Input impedance as a function of frequency, associated with optimum load impedance.
1
0.5
2
0.2
1030 MHz
1090 MHz
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
–
j
10
5
0.2
2
0.5
MGA035
1
VCC = 24 V; ZO = 50 Ω; PL = 10 W.
Fig.6 Optimum load impedance as a function of frequency; associated with input impedance.
6
1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
PACKAGE OUTLINE
0.1
4.5
max
3.45
2.90
1.7 max
3
20.5 max
seating plane
1.0
0.25 M
1
4.5
0.25
O
M
min
3.2
2.9
5.5
max
5.1
3.4
(1)
4.5
min
2
2.0
7.1
MBC888
14.2
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M2.5.
Fig.7 SOT440A.
1997 Feb 20
7
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 20
8
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
NOTES
1997 Feb 20
9
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
NOTES
1997 Feb 20
10
Philips Semiconductors
Product specification
NPN microwave power transistor
MTB10010U
NOTES
1997 Feb 20
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874
Indonesia: see Singapore
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/03/pp12
Date of release: 1997 Feb 20
Document order number: 9397 750 01741
相关型号:
©2020 ICPDF网 联系我们和版权申明